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1
BIODATA of
Prof.Dr.Krishnan BASKAR
1. General Information
Name
Prof. Dr. Krishnan BASKAR
Place and Date of
Birth (Day/Month/Year)
Kottaikuppam, India
10 December 1961
Nationality
Indian
Community
OC
Mother Tongue
Tamil
Correspondence
Address
Vice-Chancellor
ManonmaniamSundaranar University,
Abishekapatti, Tirunelveli – 627 012,
Tamil Nadu, INDIA
Permanent Address
No. 5020, 4th Street, Ram Nagar North,
Madipakkam, Chennai 600091, INDIA
Phone No.
Mobile No.:
Landline No.:
+91-9444125126
+91-462-2322973
2
2. Present Position
a. Designation Vice-Chancellor
b. Organization
Manonmaniam Sundaranar University Abishekapatti, Tirunelveli – 627 012, Tamil Nadu, INDIA
c. Pay Scale
Basic Pay Rs. 2,10,000
d. Date of Appointment to the present post
16 February 2016
3. Details of Experience and Qualifications:
S.No Post held Pay Scale Organization
Nature of duties
Experience (In Years and
Months)
1. Vice-Chancellor
UGC Pay Scale
Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, INDIA
Administration of the University and its 89 affiliated colleges in the three districts of Tirunelveli, Tuticorin & Kanyakumari in Tamil Nadu
Since 2016 -Till date
2. Director, Crystal Growth Centre
UGC
Pay
Scale
Anna University, Chennai Tamil Nadu, INDIA
To make top class research Centre in the international scenario through training, research and development.
4 Years and 7 Months
3. Director, Centre for International Affairs
UGC
Pay
Scale
Anna University, Chennai Tamil Nadu, INDIA
Promoted Academic & research exchange programs
4 Years and 7 Months
4. Professor
UGC
Pay
Scale
Anna University, Chennai Tamil Nadu, INDIA
Teaching and Research
Since 2008 -Till date (Over 10 Years)
5. Assistant Professor
UGC
Pay
Scale
Anna University, Chennai Tamil Nadu, INDIA
Growth and characterization of III-V materials and devices
8 Years
6. Senior Lecturer
UGC
Pay
Scale
Anna University, Chennai Tamil Nadu, INDIA
Growth and characterization of III-V materials and devices
5 Years and 6 Months
7. Lecturer UGC
Pay
Scale
Anna University, Chennai Tamil Nadu, INDIA
Crystal Growth and characterization of III-V materials
3 Years and 6 Months
3
4. Educational Qualifications (In chronological order from latest to Graduation level)
S.No. Qualification University Year Subject(s)
/Topics(s)
%
Achieved
Distinctions
Etc.
1 DOCENT
Royal Institute of
Technology (KTH),
Sweden
2003
Semiconductors-
Engineering
Sciences
Highly
Commended
Highly
Commended
2 Ph.D., Anna University,
Chennai 1991
Faculty of
Science
Highly
Commended
Highly
Commended
3 M.Sc., University of Madras,
Chennai 1985
Physics
(Specialization in
Electronics)
First Class Distinction
5. Administrative Experience / Post(s) & Responsibilities held
S.No. Post Organization/
University
Duration Experience
(In Years and
Months) From
(Date)
To (Date)
1. Vice-
Chancellor
Manonmaniam
Sundaranar University,
Tirunelveli,
Tamil Nadu, INDIA
February
2016 Present Till Date
2.
Director,
Centre for
International
Affairs
Anna University, Chennai
Tamil Nadu, INDIA
August
2008
February
2013
04 Years
&
06 Months
3.
Director,
Crystal
Growth
Centre
Anna University, Chennai
Tamil Nadu, INDIA
May
2012
February
2016
03Years
&
08 Months
4
6. (a) Academic/Teaching Experience & Responsibilities (In chronological order from latest to oldest)
S.No. Post Organization/ University
Duration Experience (In Years and
Months) From (Date)
To (Date)
1 Vice-Chancellor Manonmaniam Sundaranar
University, Tirunelveli, Tamil Nadu, India
February 2016
Present Till Date
2 Director
Crystal Growth Centre
Anna University, Chennai May 2012
February 2016
03 Years and 09 Months
3 Professor Anna University, Chennai Sept.2008 Present Till Date
4 Director
Centre for International Affairs , Anna University,
Chennai
August 2008
Feb. 2013 04Years and
07 Months
5 Assistant Professor
Anna University, Chennai Sept.2000 Sept. 2008
8 Years
6 Senior Lecturer Anna University, Chennai March 1995
Sept. 2000
5 Years and 6 Months
7 Lecturer Anna University, Chennai Sept.1991 March 1995
3 Years and 6 Months
8 Researcher SIMAP, Grenoble INP,
France June 2014 June 2014 25 days
9 Researcher Ecole Central Nantes,
France April 2014 May 2014 25 days
10 Researcher SIMAP, Grenoble Nantes,
France May 2010
June 2010
One Month
11 Researcher IMRE-Tohoku University,
Sendai, Japan Oct. 2007 Nov. 2007 Two months
12. Visiting Scientist Royal Institute of
Technology(KTH), Stockholm, Sweden
January 2001
January 2004
3 Years
13 Guest researcher Electrotechnical Laboratory,
Tsukuba, Japan June 2000 June 2000 30 days
14 Guest researcher Electrotechnical Laboratory,
Tsukuba, Japan Sept.1999 Sept.1999 20 days
15 Postdoctoral
Fellow STA Fellow
Electrotechnical Laboratory, Tsukuba, Japan
July 1997 July 1999 Two Years
16
Postdoctoral Fellow
Monbusho Fellow
Nagoya Institute of Technology, Japan
April 1995 March 1997
Two Years
17 Senior Research
Fellow Anna University, Chennai June 1990
September 1991
One Year 4 Months
18 Junior Research
Fellow Anna University, Chennai May 1986 June 1990
4 Year 2 Months
5
(b) Participation and Contribution in relevant areas in higher education
Organization Area of specialization
Visiting Professor
Royal Institute of Technology, Sweden
Semiconductor materials, optoelectronics devices
Resource Person
Ecole Central Nantes, France And several other national and international organizations
Internationalization, Physics of materials and Devices. Solar Cells, laser diodes, field effect transistors, light emitting diodes, sensors
( c ) Involvement with formulation of academic programmes:
S.No. Nomenclature of Innovative Academic Programmes formulated
Date of approval by Academic Council
Year of Introduction
1
Double masters in Engineering Programme with Five Ecole Centrals in France and Anna University
Through MoU signed on 16 August 2011
2011
2
Semester abroad programe in UG, PG and Programs of University Departments of Anna University
Through MoUs and Erasmusmundus
Programmes of European commission
2008
3
Five Year Integrated program in University Department of Manonmaniam Sundaranar University 1. M.Sc. Physics, 2. M.Sc. Chemistry 3. M.Sc. Mathematics 4. M.Sc. Environmental Science
44th Standing Committee on Academic Affairs (SCAA)
held on 30th May 2016
2016
4
Yoga ad-on course at UG level – Manonmaniam Sundaranar University
44th Standing Committee on Academic Affairs (SCAA) held on 30th May 2016
2016
5 New regulations for UG, PG, M.Phil and Ph.D. – Manonmaniam Sundaranar University
44th Standing Committee on Academic Affairs (SCAA) held on 30th May 2016
2016
6
Social harmony and youth leadership as electives in 2nd and 5th semesters of UG programme - Manonmaniam Sundaranar University
44th Standing Committee on Academic Affairs (SCAA) held on 30th May 2016
2016
7 Computers for modern era (Compulsory subject in all UG Programs)
46th Standing Committee on Academic Affairs (SCAA)
2017
6
Yoga for holistic health (Compulsory subject in all UG Programs) M.Sc Cyber Security (2 years) M.Sc Business Analytics (2 years) M.Sc Media Science (5 years) M.Sc Biotechnology (5 years) M.Sc Marine Science (5 years) M.Com Commerce (5 years)
(d) Important MoUs formulated for academic collaborations:
S.No. MoUs formulated Name of Agencies/Departments involved (S.No.01-59 with Anna University and 60-62 with Manonmaniam Sundaranar University)
Year and Date of MoU
1. PASCO Corporation, Japan 20.09.2008
2. Osaka City University, Japan 22.09.2008
3. Cypress Semiconductor Corporation, USA 06.11.2008
4. Maastricht University, Netherlands 14.11.2008
5. University of Joseph Fourier (Grenoble 1), France 10.12.2008
6. University of Nebraska-Lincoln, USA 05.02.2009
7. Aston University, UK 17.02.2009
8. Bern University of Applied Sciences, Switzerland 05.03.2009
9. The Universite Francois Rabelais, Tours, France 10.03.2009
10. Hiroshima University, Japan 17.03.2009
11. Dongguk University, Korea 13.04.2009
12. Yonsei University, Korea 21.04.2009
13. The Athabasca University Governing Council, Canada 01.08.2009
14. MIMOS BERHAD, Malaysia 11.08.2009
15. Fundacion fondo de cultura de Seville focus-Abengoa
Seville (BEFESA), Spain
18.08.2009
16. The University of Western Australia, Australia 07.09.2009
17. The Rovira I Virgili University, Spain 09.09.2009
18. Uppsala University, Sweden 23.09.2009
19. University of Southampton, UK 25.09.2009
20. Brunel University, West London 28.09.2009
21. National Tsing Hua University, Taiwan 09.10.2009
22. National Chiao Tung University, Taiwan 13.11.2009
7
23. FOOD Denmark Research School, Denmark 04.12.2009
24. LOICZ Central IPO., Germany 07.12.2009
25. Ecole Centrale De Nantes, France 14.12.2009
26. Hunter College of the City University of New York, USA 22.12.2009
27. ESIGELEC-School of Engineering Rouen, France 19.01.2010
28. The University of Nottingham, UK 03.03.2010
29. University of Malaya, Malaysia 11.03.2010
30. Ecole Centrale De Nantes (Double Degree Agreement of
Academic cooperation), France
08.12.2010
31. Nagoya Institute of Technology, Japan 20.09.2011
32. The University of ANGERS, France 18.02.2011
33. Polytech Nantes, University of Nantes, France 02.03.2011
34. Royal Institute of Technology, Sweden 23.03.2011
35. Birmingham City University, UK 11.05.2011
36. University of Wuppertal, Germany 09.06.2011
37. North Dakota State University, USA 20.06.2011
38. Ryerson University, Canada 05.07.2011
39. The University of Sydney, Australia 04.08.2011
40. University of New South Wales, Australia 04.08.2011
41. Ecole Centrale De Lille, France 16.08.2011
42. Ecole Centrale De Lyon, France 16.08.2011
43. Ecole Centrale De Marseille, France 16.08.2011
44. Ecole Centrale De Nantes (Double Degree Agreement of
Academic Coopration), France
16.08.2011
45. Ecole Cenrale Paris, France 16.08.2011
46. Ansbach University of Applied Sciences, Germany 05.09.2011
47. The University of Findlay, USA 05.09.2011
48. Peoples’ Friendship University of Russia (PFUR), Russia 05.09.2011
49. University of Technology Berlin, Germany 19.09.2011
50. Technical University of Liberec, Czech republic 27.09.2011
51. Gerindtec, Germany 08.11.2011
52. Panasonic Coperation (“ATR1”), Japan 01.12.2011
53. The National Institute for Materials Science (Post
Graduate Students and Researchers), Japan
01.03.2012
54. Curtin University of Technology, Australia 20.02.2012
55. Queen Mary, University of London, UK 24.04.2012
8
56. Plymouth University, UK 28.05.2012
57. University of Central Florida, USA 28.05.2012
58. Nippon Chemical Industrial Co.ltd, Japan 28.05.2012
59. Freie Universitat Berlin, Germany 06.06.2012
60 Software Technology Park of India, New Delhi, India 20 .06 2016
61 Indian Institute of Geomagnetism (IIG), INDIA 13 .072016
62 Centre of Central Marine Fisheries Research Institute,
INDIA
18.08 2016
7. International academic Exposure : More than Seven Years
S.No. Post/ Assignment
Organization
University
Area of
Assignment
Duration
From To In Years
&
Months
1. Researcher SIMAP, Grenoble
INP, France
Erasmus Mundus-Staff Mobility, European
Commission (Raman studies on Nitrides)
June 2014
June
2014 25 days
2. Researcher Ecole Central
Nantes, France
Erasmus Mundus-Staff Mobility, European
Commission (TEPL studies on Nitrides)
April
2014
May
2014 25 days
3. Researcher SIMAP, Grenoble Nantes, France
Erasmus Mundus-Staff Mobility, European
Commission (CVD Growth of AIN)
Aug.
2010
June
2010
One Month
4. Researcher IMRE-Tohoku
University, Sendai, Japan
Experimental aspects of MOCVD
Oct.
2007
Nov.
2007
Two months
5. Visiting
Scientist
Royal Institute of Technology(KTH),
Stockholm, Sweden
Fabrication of BAL& RWG lasers, MOVPE growth and
characterizations of GaInNAs and GaInAs.
GaN and related materials growth, characterization
and processing with emphasis on LEDs and
modulators
January 2001
January 2004
03 Years
6. Guest
researcher
Electrotechnical Laboratory,
Tsukuba, Japan
MBE growth of III-V/Si semiconductors and
characterization
June 2000
June 2000
30 days
7. Guest
researcher
Electrotechnical Laboratory,
Tsukuba, Japan
MBE growth of III-V/Si semiconductors and
characterization
Sept.
1999
Sept.
1999 20 days
9
8. Scholarly achievements:
Prof. K. Baskar, Vice-Chancellor, has made tremendous advancements in
academics, finance and administration in Mamonmaniam Sundaranar University,
Tirunelveli, Tamil Nadu. University was subjected to NAAC accreditation process in
August 2018 and upgraded from B-grade to A-grade with a score of 3.13. The
University was enrolled in NIRF ranking and obtained the national rank in the band
of 151-200 in the year 2018. This could be possible due to reforms in curriculum,
examination automation, affiliation, research and infrastructure. The finance of the
University has been improved by Rs.40 crores within two years and the University
is now on self-reliance in finance. The decentralized administrative ambience
resulted in speedy disposal of administrative work efficiently and transparently with
near zero grievances.
The following accomplishments were made during the tenure in Anna University (1991-2016)
Solar cells with light conversion efficiency of 21.4% were successfully fabricated
and published
UV (260-360nm) L E D s , visible light emitting diodes and Laser diodes (1.33 and
1.55 micron) were successfully fabricated at wafer level and published in journals.
Signed 59 MoUs with foreign Institutions and developed bilateral academic and
research cooperations.
Introduced the Japanese Language in the Curriculum of Anna University.
Several Japanese language books have been brought to Anna University under
Japanese Library donation programme.
8.
Postdoctoral Fellow
STA Fellow
Electrotechnical Laboratory,
Tsukuba, Japan
MBE growth of III-V/Si semiconductors and
characterization
July
1997
July
1999 2 Years
9.
Postdoctoral Fellow
Monbusho Fellow
Nagoya Institute of Technology,
Japan
MOCVD growth of III-V semiconductors on Si,
characterization and solar cell fabrication
April 1995
March 1997
2 Years
10
Established a First international MoU between Nagoya Institute of Technology and
Anna University in 1997.
One of the Coordinators for Erasmus Mundus bilateral projects of European
Commission with Italy, Sweden, France, Belgium for the total grant of about 12
million Euros.
Member of many committees in DRDO, UGC, DST, IITs and Universities
Member of several scientific societies
Has proficiency in Tamil, English, Japanese and Telugu languages.
Established class 10000 clean room with MOCVD facility for the preparation of
GaN and related alloys for LEDs and electron devices with a funding of Rs. 6.126
Crores.
Established a Liquid Phase Epitaxy Laboratory for the cost more than Rs.40 lakhs
with a funding from Government of India and Japan Collaboration.
Visitors programme and modernization of office equipment under Crystal Growth
Center-UGC: Anna University Facility
Organizing committee member of several seminars/Workshops/Schools organized
at Crystal Growth Centre.
Undertaken funded research projects over Rs.10.00 Crores, Supervised the Ph.D
and Master’s thesis in addition to regular teaching.
Introduced double master degree programmes in Anna University with top five
Ecole Centrals in France.
An Exclusive International hostel for NRI and Foreign National students both for
boys and girls (Tulip & Lavender) has been created at cost of Rs.15.00 crores.
All the rooms are equipped with air conditioner, geyser, a mini-fridge and a
microwave oven. In addition, the hostel premises are fitted with surveillance
cameras, fire alarm, access controller devices and washing machines.
International hostel has high quality state of art kitchen facilities (Gourmet Basket)
to cater the needs of international students.
11
Enhanced the admission of foreign and NRI students through single window
admission and increased the revenue of Centre for International affairs, Anna
University, from less than one crores to rupees 36 crores by increasing students
admission strength to over nine hundred with in four years (2008-2012)
Established sophisticated Equipment facilities like HRXRD, PL, XRD, SEM, FTIR,
UV-Visible, Hall system and I-V measurement system costing Rs.4.20 crores at
Crystal Growth Centre.
Established building costing Rs.1.10crores at the second floor of Crystal Growth
Centre under UGC-National Facility.
Visited 27 foreign countries including Japan, Sweden, Germany, Finland,
Norway, France, Switzerland, Italy, Belgium, UK, USA, Canada, Australia, etc.,
A. Contribution to Journals and Books:
Details
Books authored ( Chapters) Two
Peer reviewer
Several Journals
Member of the International Advisory Board Advisory committee ICCG-18,
Nagoya, Japan
12
B. Publications: in recognized professional and/or academic Journals
Total Publications: One hundred and fifty six (156)
S. No. Date Title Name of Journal
Refereed Journals
Number of citations
1. 1988
Growth and micro hardness studies of mercuric iodide
single crystals
J. Materials Science Letters
Refereed Journals
4 (Springer)
2. 1989 Ice nucleation of AgI solid
solutions Springier
Verlag series Refereed Journals
5(Google Scholar)
3. 1989
X-ray analysis and ice nucleation behavior of AgI-CuI-
KI system
J. materials Science
Refereed Journals
5 (Google Scholar
2 (Web of science)
4. 1989 Molecular dynamics of
dihalosilanes
Acta Ciencia Indica
Refereed Journals
3 (PMC)
5. 1990 Hardness anisotropy of
mercuric iodide single crystals
J. Materials Science Letters
Refereed Journals
2(Google Scholar)
6. 1990
Growth and characterization of mercurous chloride single
crystals
Crystal Research and Technology
Refereed Journals
2 (Research
gate)
7. 1990
Growth and micro hardness studies of melt grown lead (II)
chloride single crystals
Crystal Research and Technology
Refereed Journals
6 (Wiley Online Library)
8. 1991
A study on the mechanical and optical properties of mercurous
chloride single crystals
Materials Chemistry
and Physics
Refereed Journals
2(Research gate)
9. 1992 Ice nucleation studies of AgI-
NaCl system
Proc. of 13th International
conf. on nucleation
and atmospheric
aerosols
Refreed proceedings
10. 1996
Studies on ice nucleating behaviour of AgI-AgBr-CuBr
system
Mat. Res. Refereed Journals
13
11. 1993 LPE growth of GaAlAs/GaAs,
Proc. of Fifth National
Seminar on Crystal
Growth, Anna University, Madras,
India
Proceedings
12. 1995
Crystal growth and characterization of gallium
arsinide and indium phosphide and nucleation kinetics of
binary, ternary and quaternary semiconductors
Proceedings of
International conference
on emerging optoelectronic technologies.
Tata McGraw-Hill Publishing Company Ltd., New
Delhi.
Proceedings
13. 1996-05
High efficiency tandem solar cells of compound
semiconductors on silicon
Technical Report of the
Institute of Electronics, Information
and Communication Engineers
(IEICE)
Refereed Journals
14. 1996 Deep level studies of AlGaAs/
GaAs grown by LPE
J. Materials Science Letters
Refereed Journals
15. 1996
High quality AlGaAs layers grown on Si substrates by
MOCVD
J. Applied Physics
Refereed Journals
16. 1996 High efficiency AlGaAs/Si tandem solar cells under
improved growth conditions
Technical Digest 9th
International Photovoltaic Science and Engineering Conference (PVSEC-9)
Refereed Journals
14
17. 1996
Deep level transient spectroscopy study of AlGaAs layers grown on Si substrate
by MOCVD.
The Japan Society of
Applied Physics (43rd spring
meeting)
Refereed Journals
18. 1996
AFM, PL and DXRD studies of GaAs and AlGaAs grown on Si
substrates by MOCVD
The Japan Society of
Applied Physics (57th autumn
meeting)
Refereed Journals
19. January-
1997
MOCVD growth of high quality AlGaAs on Si substrate for high
efficiency solar cells
J. Crystal Growth
Refereed Journals
2 (Science Direct)
20. April- 1997
Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures Grown by
MOCVD
Applied surface science
Refereed Journals
2(Cite Web)
21. 01-
January-1997
MOCVD growth of high efficiency current -matched AlGaAs/Si tandem solarcell
J. Crystal Growth
Refereed Journals
42(My Science
Work
22. 1997
High quality GaAs epitaxial layers grown from Ga-As-Bi
solutions liquid phase Epitaxy
Japan. J. Appl. Phys.
Refereed Journals
11(IOP Science)
23. 1997
Liquid phase epitaxial system for the growth of III-V
compound semiconductors
Communications in
Instrumentation
Refereed Journals
24. January -
1998 Heteroepitaxial technologies on Si for high efficiency solar cells
Solar Energy Materials and
Solar Cells
Refereed Journals
14(Science Direct
25. June - 1997
Investigation on the concentration profiles of
arsenic atoms during LPE growth of GaAs from Ga-As-Bi
solution
Materials Chemistry and
Physics
Refereed Journals
10(Research gate)
26. January-
1997
Si surface preparation with Si beam irradiation on the growth
of III-V on Si
Proceedings of MRS 1997 fall
meeting December 1-5,
1997,
Refereed Journals
1(MRS online
Proceedings Library archive)
27. June- 1997
Investigations on the liquid phase epitaxial growth of GaAs
using Ga-As-Bi solution
Semi-conductor Devices
Refereed Journals
9(Science direct)
28. 1997 Liquid Phase Epitaxial system
for the growth of III-V Compound semiconductors
Communications in
Instrumentation
Refereed Journals
15
29. 1998
Optical and structural quality of GaAs epilayers from Gallium,
Bismuth Mixed solvents by LPE
Japan Journal of applied Physics
Refereed Journals
30. February
- 1998
On the bismuth composition dependent concentration of arsenic atoms during LPE
growth of GaAs layers from Ga-As-Bi solution
Physica Status Solidi (a)
Refereed Journals
8(Wiley Online Library)
31. August-
1998
Crystal growth of high quality hybrid GaAs heteroepitaxial
layers on Si substrate by metalorganic chemical vapor deposition and liquid phase
epitaxy
Journal of Crystal Growth
Refereed Journals
9(Science direct)
32. July-1998
Photoluminescence study of GaAs grown on Si by two step
growth and thermal cycle annealing using MBE
Proc.of 2nd World Con. and
Exhibition on Photovoltaic Solar Energy Conversion
---
33. 1999
Investigations on the estimation of arsenic atoms and growth of
GaAs epilayers from Bi solution
Materials Science and Engineering
Refereed Journals
34. January-
1999
Thermal cycle annealing and Si doping effects on the crystalline
quality of GaAs/Si grown by MBE
Inst. Phys. Conf. Ser.
IOP Publishing Co., UK.
---
35. 1999
Crystal growth of III-V materials on Si substrates for solar cell
applications
Proc. Of the tenth Inter nat. workshop on
the Physics of Semiconductor
Devices
--
16
36. April – 2000
Investigations on the undersaturated liquid phase
epitaxial growth of AlxGa1xAs
Journal of Crystal Growth
Refereed Journals
4(Research gate)
37. Novembe
r- 2000
Impurity investigation and structural quality determination of GaAs epilayers From mixed
solvents (Ga + Bi)
Journal of Crystal Growth
Refereed Journals
38. August-
2002
High performance 1.2µm highly strained InGaAs/GaAs
quantum well lasers
14th Indium Phosphide
and Related Materials
Conference, (Stockholm,
Sweden)
--- 5(IEEE Explore)
39. August-
2002
Morphological instability of GaInNAs quantum wells on
AlGaAs/GaAs distributed Bragg reflectors grown by
metalorganic vapor-phase epitaxy
14th Indium Phosphide
and Related Materials
Conference, (Stockholm,
Sweden)
---
40. 20 –
January- 2002
Preparation and characterization of
Ti/BaTiO3/InP MIS structures
Journal of Modern
Physics B
Refereed Journals
1(World Scientific)
41. 2002
Surface morphology and localized states of GaInNAs
single quantum wells grown by MOVPE
Journal of Crystal Growth
Refereed Journals
1(Research Gate)
1(Web of Science)
42. 2003 Effect of buffer layer thickness
on morphology and optical prperty of GaAs/Si
Journal of Crystal Growth
Refereed Journals
43. April- 2003
Morphological instability of GaInNAs quantum wells on Al-
containing layer grown by metalorganic vapor-phase
epitaxy
Applied Physics letters
Refereed Journals
11(Applied Physic letters) (IEEE
Explore)
44. 2003
Orientation dependence of thermal strain in InP layers on Si (001) substrates grown by epitaxial lateral overgrowth
J Applied Phys
Refereed Journals
17
45. 12-16- May - 2003
InGaAsP multi-quantum wells at 1.5µm wavelength grown on
indium phosphide templates on silicon
15th Indium Phosphide
and Related Materials
Conference, California,
USA
---
9(IEEE Explore)
20 – June - 2003
46. 25-30
May-2003
Thermal cycle annealing on the quality of GaN grown on
sapphire substrate by MOVPE
The fifth international
conference on nitride
semiconductors (ICNS-5),
Nara, Japan.
---
47. 25-27, Aug. 2003
Influence of initial growth conditions on the quality of GaN
grown on sapphire substrates
The 20th Nordic
semiconductor Meeting, Tampere, Finland.
----
48. 13-15, Oct. 2003
Selective Area Growth of GaInNAs/GaAs by MOVPE
5th International Workshop on Epitaxial Semi conductors on
Patterned Substrates and Novel
Index Surfaces
(ESPS-NIS), Stuttgart, Germany
--
1(My Science
Work) (01-January-
2004) (Elsevier)
49. 16–20, Dec. 2003
InGaN/GaN based monolithic white light emitting diodes grown
by MOVPE
Twelfth international workshop on the physics of semiconductor
devices (IWPSD),
Chennai, India
---
18
50. March –
2004
Effect of SeS2 treatment on the surface modification of GaAs
and adhesive wafer bonding of GaAs with silicon
Crystal Growth
Refereed Journals
3(Research Gate)
51. 2004
On the improvement of interface state density of
SiO2/nGaN and SiO2/n-AIGaN metal oxide semiconductor devices using water vapor
oxidation technique
Proc. of International workshop on crystal growth
and characterizati
on of Technolog-
ically important materials,
Anna University, Chennai,
India
---
52. March -
2004
Growth and characterization of selenium sulfide (SeS2) and
selenium tin sulfide (SeSnS2) microcrystals.
J. Crystal Growth
Refereed Journals
4(Research Gate)
53. July - 2004
Optical properties of high energy Tin (Sn5+) ion
irradiated MOCVD grown GaN on sapphire
Japan J. Applied Physics
Refereed Journals
2(Research Gate)
54. 2004
Gallium nitride growth process in MOVPE and Fabrication of
LEDs
Proc. of Indo, Japan
Workshop on Crystal
Growth and Applications of Advanced Materials for Optoelectroni
cs, Vijay Nikole
imprints Private Ltd, Chennai,
India
--- ---
19
55. 2004
Demonstration of silicon-oxy nitride Metal-Oxide-
Semiconductor High– Electron Mobility Transistors
Proc. of Indo, Japan
Workshop on Crystal
Growth and Applications
of Advanced
Materials for Optoelectroni
cs, Vijay Nikole
imprints Private Ltd, Chennai,
India
---- ----
56. Jan. 2005
Optical study of GaN epilayer grown by metal organic
chemical vapour deposition and pulsed laser
deposition
J. Cryst. Growth
Refereed Journals
5(Science Direct)
57. Jan. 2005
Studies on electron beam evaporated ZrO2/AlGaN/GaN
metal-oxide semiconductor high-electron mobility
transistors
Materials Science and Engineering
Physica Status Solidi
(a)
----
42 29(Wiley Online Library)
58. May – 2005
Demonstration of AlGaN/GaN metal-oxide-semiconductor
high-electron–mobility transistors with Silicon-Oxy Nitride as the gate insulator
Materials Science and Engineering -
B
Refereed Journals
11(Science Direct)
59. 15th Feb.
2005
Fabrication of double-insulator AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with SiO2 and SiN as gate
insulators
Physica Status Solidi
(a)
Refereed Journals
16(wiley Online Library)
60. 8th July 2005
A comparison on the electrical characteristics of
SiO2, SiON, and SiN as gate insulators for the fabrication of AlGaN/GaN MOSHEMTs
and MISHEMTs
Japan Journal of Applied Physics
Refereed Journals
4(IOP Science)
61. Oct. 2007
High energy irrdiation effects on AlGaN/GaN HFET devices
Semi-conductor
Science and Technology
Refereed Journals
3 (Research
Gate)
20
62. 16th Aug. 2007
Liquid Phase Epitaxial Growth of II-V semiconductor compound Zn3As2
J. Physics. D. Applied Physics
Refereed Journals
3 (IOP Science)
63. 15th
May - 2008
Influence of cooling rate on the liquid-phase epitaxial growth of
Zn3P2
J. Crystal Growth
Refereed Journals
5(Science Direct)
64. July - 2008
2 MeV ion irradiation effects on AlGaN/GaN HFET devices
Solid State Electronics
Refereed Journals
23 (Science Direct)
65. 05th Feb, 2008
Irradiation effects on AlGaN HFET devices and GaN Layers
J. Mater Sci: Mater
Electron
Refereed Journals
1(Research Gate)
66. 2008
Structural and surface characteristics of room temperature and low
temperature swift heavy ion implanted InAs and InSb
wafers
Nucl. Inst. and Meth. in Phys. Res. B
Refereed Journals
2(IAEA / INIS)
67. 10th Oct. 2008
Liquid phase epitaxial growth of Zn3As2 and the effect of 100
MeV Ni ion Irradiation
Journal of Crystal Growth
Refereed Journals
2 (Science Direct)
68. Oct. 2008
Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma
Semicond. Sci. Technol.
Refereed Journals
5(IOP Science)
69. May - 2009
Particulate assisted growth of ZnO nanorods and microrods
by pulsed laser deposition
Appl. Surf. Sci.
Refereed Journals
15(Research Gate)
70. 7th
May 2009
Reduced Charge Trapping in GaN MIS using Novel Gate
Oxide Deposition
Electronics Letters
Refereed Journals
2(IEEE Explore)
71. Oct. 2010
Studies on the Effect of Ammonia Flow Rate Induced
Defects in Gallium Nitride grown by MOCVD
J. Crystal Growth
Refereed Journals
11(Science Direct)
8(Research Gate)
72. Sept. 2010
Investigations on the nonidelaities in Pd/n-GaN Schottky diodes grown by
MOCVD
J. Alloys Compd.
Refereed Journals
5(Science Direct) 5(IEEE Explore)
73. 8th
Sept. 2010
Structural, Optical and Electrical characteristics of 70Mev Si5+ Ion Irradiation Induced nanoclusters of
Gallium Nitride”
Journal of materials Science
Refereed Journals
3(Springer Nature)
21
74.
Jan. 2009
Modifications of Defects Concentration Induced by Ammonia Flow rate and its Effects on gallium Nitride
Grown by MOCVD
Mater. Res. Soc. Proc.
Refereed Journals
75. 30th
Sept. 2010
Optical and field emission properties of ZnO nanoclusters deposited using high pressure
pulsed laser deposition
ACS Appl. Mater
Refereed Journals
56 47(Researc
h Gate)
76. 21st May 2010
Synthesis and characterization of nanocrystalline Gallium Nitride by nitridation of Ga-
EDTA complex
J. Alloys. Compd
Refereed Journals
11 (Science Direct)
77. Jan. 2010
Structural and magnetic properties of pure and cobalt
doped Gallium nitride nanocrystals
Mater. Res. Soc. Symp.
Refereed Journals
1
78. 1st
Jan. 2011
Growth of Zn3 AS2 on GaAs by liquid phase epitaxy and their
characterization
Journal of Crystal Growth
Refereed Journals
2(Web of Science)
3(Science Direct)
79. Feb. 2011
Structural, optical and Electrical characteristics of 70 Mev Si5+
Ion Irradiation Induced Nanoclusters of Gallium Nitride
Journal of Materials Science
Refereed Journals
6 (Springer)
80. 2011
Structural, characteristics of 70 Mev Si5+ Ion Irradiation
Induced Nanoclusters of Gallium Nitride
International Journal of
Nanoscience
Refereed Journals
Same 74
81.
15th Jan.
2012 (online)
Synthesis and characterization of pure and Co-doped gallium
nitride nanocrystals
Appl. Nanoscience
Refereed Journals
1(Springer)
82.
15th Jan. 2012
Morphological transistion of ZnO nanostructures influenced
by magnesium doping
Appl. Surf. Sci.,
Refereed Journals
5(Science Direct)
83. 2012
Significance of initial stages on the epitaxial growth of AIN
using High Temperature Halide Chemical Vapor Deposition”
Phys. Status Solidi C
Refereed Journals
1
22
84. Jun. 2012
Effects of AIN nucleation layer on the growth of AIN
films using high temperature hydride vapour phase
epitaxy
Journal of Alloys and compounds
Refereed Journals
14 (Science Direct)
85. 15th Oct. 2012
Growth and Characterization of AlxGal-xN on GaN/A12O3
Proceedings of SPIE
Refereed Journals
86. 15th Oct. 2012
Studies on the dislocation densities of gallium nitride
grown by MOCVD
Proceedings of SPIE
Refereed Journals
87. 15th Oct. 2012
Photon decay time studies on
Al0.45Ga0.55N/Al0.18Ga0.82N/ Al0.45Ga0.55N double
heterostructures grown on sapphire substrate by
MoCVD
Proceeding of SPIE
Refereed Journals
88. 15th Oct.
2012
On the emission state sin MQWs of InGaN/GaN and
A1GaN based SQW
Proceedings of SPIE
Refereed Journals
89. 2013 (First online)
Structural and Carrier Dynamics of GaN and AlGaN-based Double
Heterostructures in the UV Region
Journal of Electronic Materials
Refereed Journals
2 (Research
Gate) 2 (Springer)
90. 03th
July 2013
Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic
chemical vapour deposition
Cryst. Growth Design
Refereed Journals
1
91. 1st Sept.
2014
Structural and optical characterization of AlGaN/GaN layers
Journal of Crystal Growth Design
Refereed Journals
5 (Science Direct)
92. 15th
Dec. 2014
Studies on dislocation and surface morphology of
AlxGal-xN/GaN heterostructures grown by
MOCVD
Journal of Alloys and
Compounds
Refereed Journals
5 (Science Direct)
93. 3rd
Jan. 2014
‘Controlled nucleation and growth of nanostructures by employing surface modified
GaN based layers/heterostructurdes as
bottom layer’
Royal Society of Chemistry
Advances
Refereed Journals
2
23
94. 2014
Effect of Temperature on Quality and Composition of AlGaN Epilayers Grown by
MOVPE’
AIP conference
Proceedings
Refereed Journals
95. 2014 Growth and Characterization
of AlInGaN/AIN/GaN grown by MoCVD’,
Physics of semiconductor
e devices, Environmental Dcience and Engineering,
Springer international Publishing
Refereed Journals
Google Books
96. 2014
Structural optical and electrical studies of AlGaN/GaN
heterostructures with AlN interlayer grown on sapphire
substrate by MOCVD
Physics of semi-
conductore devices,
Environmental Dcience and Engineering,
Springer international Publishing
Refereed Journals
Google books
97. Apr. 2014
Synthesis, morphology and optical properties of GaN and
AlGaN semiconductor nanostructures
AIP Conference Proceedings
Refereed Journals
98. 2014
Preparation and characterization of ZnO
nanorods, nanowalls, and nanochains
Springer Science in Materials Science
Refereed Journals
1
99. May- 2014
Morphology and spectroscopic studies on nanostructured wurtzite ZnO-GaN solid
solution for photocatalytic applications
Advance Science letters
Journal of Computational and Theoretical
Nanoscience
Refereed Journals
2
100. July
2014
Synthesis and characterization of brownmillerite SrFeO2.5 in
nanostructured form
Optical Materials
Refereed Journals
6(Research gate)
101. Nov. 2014
Hydrothermal synthesis of chalcopyrite CuInS2, CuInSe2
and CuInTe2 Nanocubes and their
characterization
Current Applied Physics
Refereed Journals
4 (Science direct)
102. Nov. 2014
Influence of the V/III ratio in the gas phase on thin epitaxial
AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
Thin Solid Films
Refereed Journals
3(Science Direct)
24
103. Dec. 2014
Growth of AlN nanostructure on GaN using MOCVD
AIP Conference Proceedings
---
104. 2014 “Pure and nd added NBT-BT single crystals-Growth and
their characterization
AIP Conference proceedings
----
105. 15th Mar.
2015
Influence of intial growth stage on AlN epilayers grown by
metalorganic chemical vapour deposition
Journal of Crystal Growth
Refereed Journals
3(Science direct)
106. 5th
Oct. 2015
Structural, morphological and optical studies on CuAlS2 and CuAlSe2 nanorods prepared
by hydrothermal method
Journal of Alloys and
Compounds
Refereed Journals
107. June – 2015
Growth and characterization of InXGa1-XN/GaN single
quantum well prepared by MOCVD
AIP Conference proceedings
---
108.
15th June – 2015
(online) 2016
(volume)
Time-Resolved Photoluminescence Studies
on AlGaN Double Heterostructures
IETE Technical Review
Refereed Journals
109. 2015
Structural, optical and thermal properties of CuGaS2 crystals by chemical vapor transport
(CVT) method
Optic – International Journal of Light and
electron optics
Refereed Journals
110. July
2015
The effect of growth temperature on structural
quality of AlInGaN/AlN/GaN heterostructures grown by
MoCVD
J mater Sci Mater Electron
Refereed Journals
2(Springer)
111. Aug. 2015
Effect of swift heavy ion (SHI) irradiation on the structural and optical properties of N
implanted CVT grown ZnSe single crystals
Materials Science in
Semiconductor Processing
Refereed Journals
2(Research Gate)
112. Sept. 2015
Realization of high photocatalytic hydrogen
generation activity by nanostructured Ga1-xZnxO1-zNz
solid-solution without cp-catalyst,
Journal of Hydrogen
Energy
Refereed Journals
3(Research Gate)
25
113. 28th
Oct-2015
Anomalous room temperature magnetoresistance in
brownmillerite Ca2Fe2O5
An International Journal to
Further The Chemical Sciences
Refereed Journals
2(Research gate)
114. Dec. 2015
Growth and characterization of tris thiourea magnesium zinc
sulphate single crystals
Optik – Internation Journal for Light and Electron Optics
Refereed Journals
5(Science Direct)
2(Reserach Gate)
115. Dec. 2015
Effect of gamma ray irradiation on sodium borate single
crystals
Radiation Physics and chemistry,
Refereed Journals
1(Science Direct)
116. Dec. 2015
Preparation of GaN on GaAs (100) substrate by annealing
and post-nitridation
AIP Conference Proceedings
Refereed Journals
117. 2016
Influence on TMIn flow rate on structural and optical quality of AlIGaN/Gan epilayers grown
by MOCVD
J Alloys Compd
Refereed Journals
1(Research gate)
118. 2016 Structural and electrical
characteristics of GaN, n-GaN and AlxGa1-xN,
J Alloys Compd
Refereed Journals
2(Research Gate)
119. April 2016
Synthesis, structural, morphological and electrical
properties of NBT–BT ceramics for piezoelectric
applications
Ceramics International
Refereed Journals
2(Research Gate)
120. April 2016
Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behavior
Optik - International Journal for Light and Electron Optics
Refereed Journals
121. May 2016
Structural, morphology and optical properties of
nanocrystalline GaN and AlGaN alloys prepared by
EDTA complex route
Materials Research Bulletin
Refereed Journals
1(Science Direct)
122. 1st May 2016,
Growth of NBT-BT single crystals by flux method and
their structural, morphological and electrical
characterizations
Journal of Crystal Growth
Refereed Journals
26
123. May - 2016
Investigation on structural, optical and electrical
properties of Cp2Mg flow varied p-GaN grown by
MOCVD
AIP Conference Proceedings
--- 1(citation)
124. May - 2016
Synthesis of GaN:ZnO solid solution by solution
combustion method and characterization for
photocatalytic application
AIP Conference Proceedings
---
125. July 2016
Investigation of Er3+, Yb3+, Nd3+ doped yttrium calcium
oxyborate for photon upconversion applications
Solid State Sciences
Refereed Journals
126. Sept. 2016
Growth and characterization of neodymium and ytterbium
doped barium chloride dihydrate single crystals
Current Applied Physics
Refereed Journals
127. Sept. 2016
Structural, surface potential and optical studies of AlGaN
based double heterostructures irradiated by 120 MeV Si9+
swift heavy ions
Journal of Alloys and
Compounds,
Refereed Journals
128.
22nd Sept. 2016
(online)
Growth and Comparison of Single Crystals and
Polycrystalline Brownmillerite Ca2Fe2O5,
Journal of Crystal Growth
Refereed Journals
129. Oct. 2016
Influence of AlN thickness on AlGaN epilayer grown by
MOCVD
Superlattices and Micro-structures
Refereed Journals
130. Nov. 2016
Effect of Growth Temperature on InGaN/GaN
Heterostructures Grown by MOCVD,
Journal of Crystal Growth
Refereed Journals
131. 7th Dec. 2016
COMPARATIVE STUDY ON Ga1-xZnxN1-yOy
OXYNITRIDE SYNTHESIZED BY DIFFERENT
TECHNIQUES AND ITS APPLICATION IN
PHOTOCATALYTIC HYDROGEN PRODUCTION
Journal of Crystal Growth
Refereed Journals
132. 1st March
2017
Electronic excitation induced structural and optical
modifications in InGaN/GaN quantum well structures grown
by MOCVD
Nuclear Instruments
and Methods in Physics Research Section B:
Beam Interactions
Refereed Journals
1(citation)
27
with Materials and Atoms
133. 1st April
2017
Effect of low Cobalt doping on morphology and properties of
calcium ferrite and its application as cathode in Solid
Oxide Fuel Cell
Current Applied Physics
Refereed Journals
2(citation)
134. 3rd May 2017
Thermal and optical studies on induced smectic phases of inter molecular hydrogen
bonded liquid crystals between decyloxy benzoic
acid and citric acid
Molecular
Crystals and Liquid
Crystals
Refereed Journals
2(citation)
135. 19th May
2017
Effect of varying Ga content in ZnO: GaN solid solution synthesized by solution
combustion technique for photocatalytic applications
AIP Conference Proceedings
Refereed Journals
136. 19th May
2017
Effect of silicon doping in InGaN/GaN heterostructure
grown by MOCVD
AIP Conference Proceedings
Refereed Journals
137. 19th May
2017
Electrochemical performance of brownmillerite calcium ferrite for application as
supercapacitor
AIP Conference Proceedings
Refereed Journals
1(citation)
138. June 2017
Optical investigations and strain effect in AlGaN/GaN
epitaxial layers
Journal of Physics:
Conference Series
Refereed Journals
139. 5th June
2017
Correlation between indium content in monolithic
InGaN/GaN multi quantum well structures on
photoelectrochemical activity for water splitting
Journal of Alloys and
Compounds
Refereed Journals
2 (citation)
140. 15th June
2017
Self-catalytic growth of AlN microrods on sapphire
substrate
Journal of Crystal Growth
Refereed Journals
141. 15th June
2017
Growth and comparison of single crystals and
polycrystalline brownmillerite Ca2Fe2O5
Journal of Crystal Growth
Refereed Journals
3 (citation)
142. 15th June
2017
Effect of growth temperature on InGaN/GaN
heterostructures grown by MOCVD
Journal of Crystal Growth
Refereed Journals
2 (citation)
143. 1st Dec 2017
Influence of Hydrogen Bond on Thermal and Phase
Transitions of Binary Complex Liquid Crystals
Russian Journal of Physical
Chemistry A
Refereed Journals
28
144. 31st Dec
2017
Blue-Green-Red Emission From the InGaN/GaN
Heterostructures Grown By Metal Organic Chemical
Vapour Deposition
Materials Today:
Proceedings
Refereed Journals
145. 15th Feb
2018
The role of indium composition on thermo-electric properties
of InGaN/GaN heterostructures grown by
MOCVD
Journal of Alloys and
Compounds
Refereed Journals
2 (citation)
146. 1st March
2018
Catalyst-free deposition of few layer graphene on c-plane
sapphire substrates by drop casting technique
Journal of Materials Science:
Materials in Electronics
Refereed Journals
1 (citation)
147. 1st March
2018
Formation of graphitic and diamond-like carbon by low
energy carbon ion implantation on c plane
sapphire substrate
Thin Solid Films
Refereed Journals
1 (citation)
148. 30th
March 2018
Large area ultraviolet photodetector on surface modified Si: GaN layers
Applied Surface Science
Refereed Journals
3 (citation)
149. 15th April
2018
Growth of gold-palladium alloy catalyzed gallium nitride
nanowires by chemical vapour deposition
Materials Letters
Refereed Journals
1 (citation)
150. 18th April
2018
Circular Transmission Line Measurement (CTLM) Studies on Epitaxial Layers of AlGaN
Materials Today:
Proceedings
Refereed Journals
151. 22nd June
2018
Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition
Applied Surface Science
Refereed Journals
152. 1st Aug 2018
Effect of gamma irradiation on AlInGaN/AlN/GaN
heterostructures grown by MOCVD
Superlattices and
Microstructures
Refereed Journals
153. 1st Aug 2018
Hybrid gallium nitride/organic heterojunction with improved
electrical properties for optoelectronic applications
Journal of Materials Science
Refereed Journals
154. 1st Aug 2018
Development of Zn1-x-yGaxCoyO1-zNz as a non-
oxide semiconductor material with visible light
photoelectrochemical activity
Vacuum Refereed Journals
155. 15th Oct
2018
Passivation of yellow luminescence of MOCVD
grown InGaN/GaN
Nuclear Instruments
and Methods
Refereed Journals
29
heterostructures by Nitrogen-ion implantation
in Physics Research Section B:
Beam Interactions
with Materials and Atoms
156. 30th Aug
2018
Investigations on morphology, growth mode and indium incorporation in MOCVD
grown InGaN/n-GaN heterostructures
Optik Refereed Journals
C. Participation and Scholarly Presentations in Conference:
CONFERENCES, WORKSHOPS AND REFRESHER COURSES ORGANISED
1. November 2004
Co-Coordinator, UGC Refresher course on Recent Trends in Crystal Growth and Characterization, Nov 1-7, Anna University, Chennai, India
2. December 2004
Coordinator, Indo-Japan workshop on Crystal Growth and Applications of Advanced Materials
for Optoelectronics, December 7-10, Anna University, Chennai, India
3. October 2008
Indo-UK Seminar on Bio-Technology was jointly organized by the British Council, the Centre for
International Affairs and the Centre for Biotechnology at the Centre for Biotechnology, Anna
University, Chennai on 17th and 18th October 2008.
4. November 2008 A joint meeting of scientists and delegates from Russia, facult y of the Centre for International
Affairs and the Centre for Bio-technology, Anna University, Chennai was conducted on 20th
and 21st
November 2008 under the banner of Indo – Russian Seminar on Biotechnology
5. January 2009 Indo –US workshop on “Visible and Ultra Violet Sources for Solid State Lighting and Water
Purification” was jointly organized by Crystal Growth Centre and the Centre for International during 5
th to 7
th January 2009
6. August 2009
Three day International workshop on “Content based Image Fusion and Retrieval” in
collaboration with the faculty of School of Electronics and Communication and Electrical
Engineering, University of Hertfordshire, UK during 7 - 9 August 2009 was jointly conducted
by Department of Electronics, MIT Campus and the Centre for International Affairs, Anna
Universit y Chennai.
30
7. August 2009
The Centre for International Affairs organized an Indo-US seminar on research perspective for
University Excellence: A US model for India on 10th
August 2009 in collaboration with the University of Nebraska-Lincoln, USA.
8. September 2009 An Indo - UK Seminar on Biotechnology “UK and Indian Perspectives” was jointly organized by
the Centre for Biotechnology and the Centre for International Affairs, Anna University, Chennai
during 11th
and 12th
September 2009
9. October 2009 The third “International Workshop on advances in Nano Science and Technology” was held
between 28th
and 30th
October 2009 jointly organized by International Centre for theoretical Physics (ICTP), Trieste, Italy, Crystal Growth Centre and the Centre for International Affairs, Anna University, Chennai.
10. December 2009 The Centre for International Affairs and the Department of Aerospace Engineering, MIT
campus jointly organized the Indo-German workshop on advanced technologies during 3 – 4 December 2009.
11. January 2010
International Conference on Advances in Industrial Engineering Applications (ICAIEA –
2010) was jointly organized by Department of Industrial Engineering and the Centre for
International Affairs, Anna University, Chennai during January 6 - 8, 2010.
12. January 2010
International workshop on “Materials Science for Energy Storage” was jointly organized
by the Department of Physics and the Centre for International Affairs, Anna University,
Chennai during 18 – 22 January 2010
13. August 2010 The International Conference on “Emerging Technologies in Renewable Energy” (ICETRE
- 2010) was organized by Anna University, Chennai during 18-21 August, 2010 at the College of Engineering, Guindy Campus. The Centre for International Affairs jointly organized this International Conference in association with faculty members from Crystal Growth Centre, Institute for Energy Studies and IC Engineering Division.
14. August 2010
The Centre for International Affairs organized a “Workshop on Fatigue of Materials and
Fracture Mechanics” during 10-12 August 2010 in association with University of Tours, France.
15. September 2010
An “INDO – ITALIAN advanced level workshop” was conducted jointly by Crystal Growth
Centre and the Centre for International Affairs, Anna University, Chennai during 8 – 10
September 2010
16. October 2010
A one-day INDO–SWEDISH International Workshop on “Applied Engineering” was jointly
organized by Anna University, Chennai, India and Royal Institute of Technology – KTH
& Uppsala University, Sweden on 22 October 2010
31
17. January 2011 International Workshop on “Wide Band Gap Semiconductor Nanostructures” was jointly
organized by Crystal Growth Centre and Centre for International Affairs during 10-11
January 2011
18. March 2011 International Workshop on “Biomedical Sciences and Technologies” was conducted jointly by
the Department of Electronics and Communication Engineering and Centre for International
Affairs, Anna University during 02 – 04 March 2011
19. September 2011 Indo-Japan Workshop on “Recent Trends in Materials and Devices” was jointly organized by
Hiroshima University, Japan and Centre for International Affairs, Anna University, Chennai
during 05 – 06 September 2011
20. December 2011 International Workshop on “Palaeoclimate and Human Dispersal during Marine
Isotope Stage 3” was jointly organized with the Department of Geology during 12-17 December
2011
21. February 2012
International conference on “Climate change and CO2 Management: Mitigation, Separation and
Utilization” was organized by Centre for Environmental Sciences and Centre for International
Affairs, Anna University, Chennai during 2 – 3 February 2012
22. July 2012
Indo-UK Workshop on Advanced Materials for Engineering and Technology during 27-28 July
2012 at Anna University, Chennai .
23. December 2012
International Workshop on Crystal Growth and Characterization of Advanced Materials
and Devices during 16-19 December 2012 at Anna University, Chennai.
24. December2012
Twenty Fourth National Seminar on Crystal Growth (XXIV-NSCG) during 20-22 December
2012 at Anna University, Chennai .
25. January 2013 International Workshop on Renewable Energy, Climate Change & Energy Mangement
2013 during 24-25 January 2013 at Anna University, Chennai .
26. January 2013
Second International Workshop on Advanced Functional Nanomaterials SIWAN- 2013
during 28-30 January 2013 at Anna University, Chennai .
27. August 2013 Workshop on Powder, Nano and Thin film characterization by X-ray diffraction (X’Raydiate
2013) during 28-30 August 2013, Anna University, Chennai.
28. February 2015
International Symposium on semiconductor materials and devices (ISSMD-3), during 02-05
February 2015
32
29. February 2015
Twenty Fifth National Seminar on Crystal Growth (XXV-NSCG) during 05-06 February
2015 at Anna University, Chennai .
C. II International Conferences
S.No. Date Title of Conference or Institution
Nature of
Duties
(Papers
Presented/
Organized)
1. 10-15
August 1989
International Conference
ICCG-9, Sendai, Japan
Presented
2. 3-7 June
2002
International Conference
ICMOVPE
Berlin, Germany
Presented
3. 25-30
May
2003
The fifth international conference on nitride
semiconductors
(ICNS-5), Nara, Japan.
Presented
4. 09-10
December
2010
International Conference on Compound
Semiconductors,
Seoul, Korea
Presented
5. 6-8
January
2010
International Conference on Advances in
Industrial Engineering Applications (ICAIEA-
2010),
Anna University, Chennai
Organized
6. 18-21
August
2010
The international Conference on “Emerging
Technologies in renewable Energy” (ICETRE
– 2010), Anna University, Chennai
Organized
7. 02-03
February
2012
International Conference on “Climate change
and Com2 management: Mitigatio,
Separation and utilization”
Anna University, Chennai
Organized
8. 1992 13th Internat.l conf. on nucleation and
atmospheric aerosols
Presented
33
9. 1995 International conference on
emerging optoelectronic
technologies
Presented
10. 01-05
July
1996
8th International Conference on
Solid Films and surfaces, Osaka,
Japan.
Presented
11. 11-15
November
1996
9th International Photovoltaic
Science and Engineering
Conference (PVSEC-9), Miyazaki,
Japan.
Presented
12. 06-100
July
1998
2nd World Con. and Exhibition on
Photovoltaic Solar Energy
Conversion, Vienna
Presented
13. 20-24
September
1999
Eleventh International Conference
on Photovoltaic Science and
Engineering
Conference, Sapporo, Japan.
Attended
14. 1-3
March
2000
Fifth National conference on High
pressure Science and Technology,
Anna University, Chennai.
Attended
15. 22-24
March
2000
First Asian Conference on Solid-
state Ionic devices, Anna
University, Chennai.
Attended
16. 9th August 2000 National conference on Crystal
Growth (Tamil), Anna
University, Chennai.
Attended
17. 3-7
June
2002
Eleventh International Conference
on Metalorganic Vapor Phase
Epitaxy (IC
MOVPE-XI), Ludwig-erhard-haus,
Berlin, Germany,
Attended
18. 2002 14th Indium Phosphide and Related
Materials Conference, (Stockholm,
Sweden)
Presented
34
19. 2002 14th Indium Phosphide and Related
Materials Conference, (Stockholm,
Sweden)
Presented
20. 12-16
May
2003
15th Indium Phosphide and Related
Materials Conference, California,
USA
Presented
9. Research Projects:
S.No. Funding Agency
Nature of Project Duration of
Project
Amount of Grant
(Rupees)
1. MHRD Development of Semiconductor laser for optoelectronic devices
1995-1997 Rs. 15.00 lakhs
2. ISRO Development of Germanium substrates suitable for epitaxial growth of GaAs layers for space quality solar cells
1997-2004 Rs. 10.80 lakhs
3. NSC Oxygen irradiation effects on InGaAs based devices
2001-2004 Rs. 0.45 lakhs
4. NSC Fabrications of GaAs schottky diode and PN junction solar cells by wafer bonding on silicon substate using chalcogenides
2002-2005 Rs. 2.34 lakhs
5. NSC Growth and characterization of alloys of INSb abd InAs epitaxial layers for infrared applications
2005-2008 Rs. 3.33 lakhs
6. Tamil Nadu Government
Establishment of national Facility for Semiconductor Materials and Devices for Nanotechnology at Anna University, Chennai
2008 Rs. 50.00 lakhs
7. DST, New Delhi
Semiconductor Nanostructures
2008-2011 Rs. 6.1624 crores (about
1.5 million USD)
8. DST, New Delhi
Growth and Characterization of AlGaN Heterostructures
2010-2013 Rs.1.8 crores
9. DRDO, New Delhi
Supply of High resistive GaN epitaxial layers
2010-2011 Rs. 20 lakhs
10. DST, New Delhi
Surface modified GaN/InGaN heterostructures with AIGaN
2014-2017 Rs. 60.00 lakhs
35
barrier layers for photovolatics applications
11. UGC-DAE, Indore
Synthesis and characterization of poly crystalline and single crystals of oxygen deficient perovskite caFeO2.5 and SrFeO2.5
2014-2017 Rs. 6.39 lakhs
12. IUAC-Delhi Irradiation effects on InGaN and AlInGaN epilayers grown by MOCVD
2015-2018 Rs. 5.60 lakhs
10. Consulting Experience: Undertaken consultancy work in project mode with
ISRO Rs.15 lakhs and DRDO Rs19.90 lakhs
11. Honours / Awards & Fellowships for outstanding work:
S.No. Name of Award/ fellowship etc.
Elected/Honorary Fellow
Awarded by Year Award
1. Junior Research
Fellow
award Anna University,
Madras
May1986 –
June 1990
2. Youngsters
attractive paper
award winner
(140000 Yen)
award 9th international
Conference on
crystal growth,
Sendai, Japan
August
1989
3. CSIR Senior
Research fellow
award Anna University,
Madras
June1990 -
Sept.1991
4. Postdoctoral
fellow
award NIT, Japan April 1995 –
March 1997
5. Monbusho Fellow
thorough MHRD
India
award Nagoya Institute of
Technology, Japan
April 1995 -
March 1997
6. STA Fellow
Government of
Japan
award Electrotechnical
Laboratory,
Tsukuba, Japan
July1997 –
July 1999
7. Active researcher
Award 2011
award Anna University,
Chennai
2011
8. Youngsters
attractive paper
award 9th international
Conference on
August
1989
36
award winner
(140000 Yen)
crystal growth,
Sendai, Japan
12. No. of Research Scholars Successfully guided/completed:
(completed : 18, Ongoing : 2 Ph.D. - Fulltime with Fellowship)
1. S.SARAVANAN
Ph.D 1998 GROWTH AND CHARACTERIZATION OF GaAs
AND AlGaAs EPILAYERS ON GaAs AND Si
SUBSTRATE BY LPEAND MOCVD
2. P.PREMCHANDER Ph.D 2004 PULSED LASER DEPOSITION OF GaN,
IRRADIATION OF GaN AND WAFER BONDING
3. K.BALACHANDER Ph.D 2005 FABRICATION AND ELECTRICAL
CHARACTERIZATION OF ALGAN/GAN METAL-
INSULATOR-SEMICONDUCTOR HIGH-ELECTRON
MOBILITY –TRANSISTORS (MISHEMTS) WITH
DIFFERENT GATE INSULATORS
4. SONIA
GNANAPRAGASM
Ph.D 2007 INVESTIGATIONS ON HIGH AND LOW ENERGY
RADIATION EFFECTS ON AlGaN/GaN HFET
DEVICES AND THICK GaN LAYER
5. S.SUDHAKAR
Ph.D 2008 LIQUID PHASE EPITAXIAL GROWTH OF InAs,
Zn3As2 AND Zn3P2 AND EFFECTS OF SWIFT
HEAVY ION IRRADIATION
6. S.SURESH Ph.D 2010 EFFECTS OF V/III RATIO AND IRRADIATION
INDUCED DEFECTS ON STRUCTURAL,OPTICAL
,ELECTRICAL AND DEVICE CHARACTERISTICS
OF GALLIUM NITRIDE
7. V.GANESH
Ph.D 2010 SYNTHESIS AND CHARACTERIZATION OF PURE
AND COBALT DOPED GaN NANOCRYSTALS
8. T.PREMKUMAR
Ph.D 2010 GROWTH AND CHARACTERIZATION OF ZnO
NANORODS,NANOWALLS AND NANOCHAINS
USING PULSED LASER DEPOSITION
9. M.NAGARAJAN Ph.D 2013 HETEROEPITAXIAL GROWTH OF ZINC
ARSENIDE OF GALLIUM ARSENIDE AND INDIUM
PHOSPHIDE ON SILICON
10. M.BALAJI
Ph.D 2013 EPITAXIAL GROWTH AND CHARACTERIZATION
OF AlN AND EFFECTS OF ION IRRADIATION ON
AlGaN/GaN HETEROSTRUCTURES
11. P. ARIVAZHAGAN Ph.D 2015 STRUCTURAL , OPTICAL AND ELECTRICAL
STUDIES ON GaN, AlGaN AND AlGaN BASED
DOUBLE HETEROSTRUCTURES GROWN BY
37
METAL ORGANIC CHEMICAL VAPOR
DEPOSITION(MOCVD)
12. R. RAMESH
Ph.D 2015 GROWTH AND CHARACTERIZATION OF
AlGaN/GaN HETEROSTRUCTURES GROWN BY
METAL ORGANIC CHEMICAL VAPOUR
DEPOSITION (MOCVD)
13. R. LOGANATHAN Ph.D 2016 EPITAXIAL GROWTH OF AlInGaN, AlGaN AND AlN
HETEROSTRUCTURES BY MOCVD
14. B. KUPPULINGAM
Ph.D 2016
GROWTH AND CHARACTERIZATIONS OF GaN,
AlGaN AND AlN SEMICONDUCTOR
NANO/MICROSTRUCTURES
15. M. JAYASAKTHI Ph.D 2016
EPITAXIAL GROWTH AND CHARACTERIZATION
OF AlGaN/GaN AND AlGaN/AlN
HETEROSTRUCTURES
16. K. SREENADHA RAO Ph.D 2017 GROWTH AND CHARACTERIZATION OF NBTBT
SINGLE CRYSTALS SYNTHESIS AND
IRRADIATION EFFECTS ON NBT BT CERAMICS
FOR PIEZOELECTRIC APPLICATIONS
17. K. PRABAKARAN Ph.D 2017
MOCVD GROWTH AND CHARACTERIZATION OF
InGaN AND InGaN/GaN QUANTUMWELL
STRUCTURES AND EFFECT OF ION
IRRADIATION
18. S. SURENDER Ph.D
(Sub-
mitted)
2018 INVESTIGATIONS ON InGaN/GaN MQW
STRUCTURES GROWN BY MOCVD FOR
PHOTOVOLTAIC APPLICATIONS
Prof. Dr.K. BASKAR
Crystal Growth Centre
Anna University,
Chennai 600 025, INDIA