benha university faculty of engineering at shoubra l shoubra/electrical... · high frequency...
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Lecture # 8 BJT High Frequency Response
Instructor: Dr. Ahmad El-Banna
Benha University Faculty of Engineering at Shoubra
No
vem
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2014
ECE-312 Electronic Circuits (A)
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Agenda
Miller Effect Capacitance
High Frequency Response – BJT Amplifier
Multistage Frequency Effects
Square-Wave Testing 2
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MILLER EFFECT CAPACITANCE 3
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Miller input capacitance
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• In the high-frequency region, the capacitive elements of importance are the interelectrode (between-terminals) capacitances internal to the active device and the wiring capacitance between leads of the network.
• For any inverting amplifier, the input capacitance will be increased by a Miller effect capacitance sensitive to the gain of the amplifier and the interelectrode (parasitic) capacitance between the input and output terminals of the active device.
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Miller output capacitance
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• A positive value for Av would result in a negative capacitance (for Av > 1). • For noninverting amplifiers such as the common-base and emitter-follower configurations,
the Miller effect capacitance is not a contributing concern for high-frequency applications. • The Miller effect will also increase the level of output capacitance, which must also be
considered when the high-frequency cutoff is determined.
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HIGH FREQUENCY RESPONSE – BJT AMPLIFIER
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High Frequency Response
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• At the high-frequency end, there are two factors that define the 3-dB cutoff point:
1. the network capacitance (parasitic and introduced) 2. the frequency dependence of hfe (β).
• For RC circuit:
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1. Network Parameters :
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• At high frequencies, the various parasitic capacitances (Cbe, Cbc, Cce) of the transistor are included with the wiring capacitances (CWi, CWo).
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2. hfe (or β) Variation
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• The quantity, fβ, is determined by a set of parameters employed in the hybrid π model
• The variation of hfe (or β) with frequency approaches the following relationship:
• fβ is a function of the bias configuration.
• the small change in hfb for the chosen frequency range, revealing that the common-base configuration displays improved high-frequency characteristics over the common-emitter configuration.
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Gain-Bandwidth Product
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• There is a Figure of Merit applied to amplifiers called the Gain-Bandwidth Product (GBP) that is commonly used to initiate the design process of an amplifier.
• It provides important information about the relationship between the gain of the amplifier and the expected operating frequency range.
• at any level of gain the product of the two remains a constant.
• the frequency fT is called the unity-gain frequency and is always equal to the product of the midband gain of an amplifier and the bandwidth at any level of gain.
• For transistors:
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Example
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MULTISTAGE FREQUENCY EFFECTS 12
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Multistage Frequency Effects
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SQUARE-WAVE TESTING 14
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Square-Wave Testing
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• A sense for the frequency response of an amplifier can be determined experimentally by applying a square-wave signal to the amplifier and noting the output response.
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Square-Wave Testing..
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• For more details, refer to:
• Chapter 9 at R. Boylestad, Electronic Devices and Circuit Theory, 11th edition, Prentice Hall.
• The lecture is available online at:
• http://bu.edu.eg/staff/ahmad.elbanna-courses/11966
• For inquires, send to:
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