bdw93c

©2000 Fairchild Semiconductor International Rev. A, February 2000

BD

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NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Thermal Characteristics TC=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage: BDW93: BDW93A: BDW93B: BDW93C

45 60 80100

VVVV

VCEO Collector-Emitter Voltage: BDW93: BDW93A: BDW93B: BDW93C

45 60 80100

VVVV

IC Collector Current (DC) 12 A

ICP *Collector Current (Pulse) 15 A

IB Base Current 0.2 A

PC Collector Dissipation (TC=25°C) 80 W

TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C

Symbol Parameter Value Units

Rθjc Thermal Resistance Junction to Case 1.5 °C/W

BDW93/A/B/C

Hammer Drivers, Audio Amplifiers Applications• Power Darlington TR• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively

1.Base 2.Collector 3.Emitter

1 TO-220


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Electrical Characteristics TC=25°C unless otherwise noted

* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO(sus) * Collector-Emitter Sustaining Voltage: BDW93: BDW93A: BDW93B: BDW93C

IC = 100mA, IB = 0 456080

100

VVVV

ICBO Collector Cut-off Current: BDW93: BDW93A: BDW93B: BDW93C

VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0

100 100 100 100

µAµAµAµA

ICEO Collector Cut-off Current: BDW93: BDW93A: BDW93B: BDW93C

VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0

1 1 1 1

mAmAmAmA

IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA

hFE * DC Current Gain VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A

1000 750 100

20000

VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA IC = 10A, IB = 100mA

2 3

VV

VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA IC = 10A, IB = 100mA

2.5 4

VV

VF * Parallel Diode Forward Voltage IF = 5A IF = 10A

1.31.8

2 4

VV

©2000 Fairchild Semiconductor International

BD

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Rev. A, February 2000

Typical characteristics

Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter On Voltage Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

0.1 1 10 100100

1k

10k

100k

VCE = 3V

hF

E,

DC

CU

RR

EN

T G

AIN

IC [A], COLLECTOR CURRENT

0.1 1 10 1000.1

1

10

IC= 250 IB

VC

E(s

at)

[V

], S

AT

UR

AT

ION

VO

LT

AG

E

IC [A], COLLECTOR CURRENT

0.0 0.8 1.6 2.4 3.2 4.00

4

8

12

16

20

VCE = 3 V

I C [A

], C

OLL

EC

TO

R C

UR

RE

NT

VBE [V], BASE-EMITTER VOLTAGE

1 10 10010

100

1000

f=1MHz

IE=0

C

ob

[pF

], O

UT

PU

T C

AP

AC

TIA

NC

E

VCB [V], COLLECTOR-BASE VOLTAGE

1 10 100 10000.1

1

10

100

100 us

1 ms5 ms

DC

IC MAX.

BDW93B

BDW93C

BDW93

BDW93A

I C [A

], C

OL

LEC

TO

R C

UR

RE

NT

VCE

[V], COLLECTOR EMITTER VOLTAGE

0 25 50 75 100 125 150 175 2000

20

40

60

80

100

PD [

W],

PO

WE

R D

ISS

IPA

TIO

N

TC [oC], CASE TEMPERATURE

4.50 ±0.209.90 ±0.20

1.52 ±0.10

0.80 ±0.102.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.8

0 ±

0.1

015.9

0 ±

0.2

0

10.0

8 ±

0.3

018.9

5M

AX

.

(1.7

0)

(3.7

0)

(3.0

0)

(1.4

6)

(1.0

0)

(45°)

9.2

0 ±

0.2

013.0

8 ±

0.2

0

1.3

0 ±

0.1

0

1.30+0.10–0.05

0.50+0.10–0.05

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

TO-220

Package Demensions


BD

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Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. E

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®

FASTr™GTO™

HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®

QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6

SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORINTERNATIONAL.As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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