bcr1am marleni.pdf
TRANSCRIPT
Feb.1999
APPLICATIONContactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,trigger circuit for low and medium triac, solid state relay,other general purpose control applications
MITSUBISHI SEMICONDUCTOR ⟨TRIAC⟩
BCR1AM-12LOW POWER USE
GLASS PASSIVATION TYPE
BCR1AM-12
• IT (RMS) ........................................................................ 1A• VDRM ....................................................................... 600V• IFGT !, IRGT !, IRGT # ............................................. 5mA• IFGT # .....................................................................10mA
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=56°C 4
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-statecurrent
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
1.0
10
0.41
1
0.1
6
1
–40 ~ +125
–40 ~ +125
0.23
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage 1
Non-repetitive peak off-state voltage 1
Voltage class
12
600
720
Unit
V
V
MAXIMUM RATINGS
1. Gate open.
TYPENAME
VOLTAGECLASS2
13
1 2 3
T1 TERMINAL T2 TERMINAL GATE TERMINAL
φ5.0 MAX
4.4
5.0
MA
X12
.5 M
IN
3.9
MA
X1.3
1.25 1.25CIRCUMSCRIBE
CIRCLEφ0.7
1 3 2
OUTLINE DRAWING Dimensionsin mm
JEDEC : TO-92
Feb.1999
4.42.40.80.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0
102
7532
101
7532
100
7532
10–1
TC = 25°C
100 2 3 5 7 101
4
2
2 3 5 7 1024 4
6
8
10
0
MAXIMUM ON-STATE CHARACTERISTICS
ON
-ST
AT
E C
UR
RE
NT
(A
)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SU
RG
E O
N-S
TA
TE
CU
RR
EN
T (
A)
CONDUCTION TIME(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR ⟨TRIAC⟩
BCR1AM-12LOW POWER USE
GLASS PASSIVATION TYPE
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
VFGT #
IFGT !
IRGT !
IRGT #
IFGT #
VGD
Rth (j-c)
(dv/dt)c
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case 4
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
!
@
#
$
!
@
#
$
2. Measurement using the gate trigger characteristics measurement circuit.3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
Test conditionsVoltageclass
12
VDRM(V)
600
Unit
V/µs
Commutating voltage and current waveforms(inductive load)
(dv/dt) c
Min.
2
ELECTRICAL CHARACTERISTICS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage 2
Gate trigger current 2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-statecommutating voltage
1. Junction temperatureTj=125°C
2. Rate of decay of on-state commutating current(di/dt)c=–0.5A/ms
3. Peak off-state voltageVD=400V
Limits
Min.
—
—
—
—
—
—
—
—
—
—
0.1
—
3
Max.
1.0
1.6
2.0
2.0
2.0
2.0
5
5
5
10
—
50
—
SUPPLYVOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAINVOLTAGE
(di/dt)c
VD(dv/dt)c
PERFORMANCE CURVES
Feb.1999
10–1
2 3100 5 7 101 2 3 5 7 102 2 3 5 7 103
101
7532
100
7532
7532
10–2
VGM = 6V
PGM =1W
PG(AV)= 0.1W
IGM = 1A
VGD = 0.1V
IFGT III
IFGT IIRGT IIRGT III
MAXIMUM ON-STATE POWERDISSIPATION
ON
-ST
AT
E P
OW
ER
DIS
SIP
AT
ION
(W
)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATUREVS. RMS ON-STATE CURRENT
CA
SE
TE
MP
ER
AT
UR
E (
°C)
RMS ON-STATE CURRENT (A)
GA
TE
VO
LTA
GE
(V
)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
101
103
75
32
–60 –20 20
102
75
32
60 100 140
4
4
–40 0 40 80 120
VRGT III, VFGT III
VFGT I, VRGT I
TYPICAL EXAMPLE
101
103
75
32
–60 –20 20
102
75
32
60 100 140
4
4
–40 0 40 80 120
IRGT III, IFGT III
IFGT I, IRGT I
TYPICAL EXAMPLE
2.0
1.6
1.2
0.8
0.4
02.00 0.4 0.8 1.2 1.6
360°CONDUCTIONRESISTIVE,INDUCTIVELOADS
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
360°CONDUCTION
CURVES APPLY REGARDLESSOF CONDUCTION ANGLERESISTIVE, INDUCTIVE LOADS
MAXIMUM TRANSIENT THERMALIMPEDANCE CHARACTERISTICS
TRA
NS
IEN
T TH
ER
MA
L IM
PE
DA
NC
E (
°C/W
)
CONDUCTION TIME(CYCLES AT 60Hz)
101
2 310–1 5 7 100 2 3 5 7 101 2 3 5 7 102
103
7532
102
7532
7532
100
2 3102 5 7 103 2 3 5 7 104 2 3 5 7 105
JUNCTION TO AMBIENT
JUNCTION TO CASE
GATE CHARACTERISTICS
100
(%)
GAT
E TR
IGG
ER C
URRE
NT (T
j = t°
C)G
ATE
TRIG
GER
CUR
RENT
(Tj =
25°
C)
100
(%)
GAT
E TR
IGG
ER V
OLT
AGE
( Tj =
t°C)
GAT
E TR
IGG
ER V
OLT
AGE
( Tj =
25°
C)
MITSUBISHI SEMICONDUCTOR ⟨TRIAC⟩
BCR1AM-12LOW POWER USE
GLASS PASSIVATION TYPE
Feb.1999
LACHING CURRENT VS.JUNCTION TEMPERATURE
LAC
HIN
G C
UR
RE
NT
(m
A)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATUREVS. RMS ON-STATE CURRENT
AM
BIE
NT
TE
MP
ER
AT
UR
E (
°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATECURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS. RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100
(%)
BREA
KOVE
R VO
LTAG
E ( d
v/dt
= x
V/µ
s)BR
EAKO
VER
VOLT
AGE
( dv/
dt =
1V
/µs)
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
TYPICAL EXAMPLE
101
103
75
32
–60 –20 20
102
75
32
60 100 140
4
4
–40 0 40 80 120
TYPICAL EXAMPLE
14040–40–60 –20 0 20 60 80 100120
105
7532
104
7532
103
7532
102
TYPICAL EXAMPLE 160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
CURVES APPLY REGARDLESSOF CONDUCTION ANGLENATURAL CONVECTIONNO FINS
RESISTIVE,INDUCTIVELOADS
100
(%)
HOLD
ING
CUR
RENT
( Tj =
t°C)
HOLD
ING
CUR
RENT
( Tj =
25°
C)
100
(%)
REPE
TITI
VE P
EAK
OFF
-STA
TE C
URRE
NT ( T
j = t°
C)RE
PETI
TIVE
PEA
K O
FF-S
TATE
CUR
RENT
( Tj =
25°
C)
100
(%)
BREA
KOVE
R VO
LTAG
E ( T
j = t°
C)BR
EAKO
VER
VOLT
AGE
( Tj =
25°
C)
140–60 –20 20 60 100
103
7532
102
7532
101
7532
100–40 0 40 80 120
T2+, G+
T2–, G–
T2–, G+
T2+, G–
TYPICALEXAMPLE
TYPICALEXAMPLE
DISTRIBUTION
2 3100 5 7 101 2 3 5 7 102 2 3 5 7 103
120
0
20
40
60
80
100
140
160TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
MITSUBISHI SEMICONDUCTOR ⟨TRIAC⟩
BCR1AM-12LOW POWER USE
GLASS PASSIVATION TYPE
Feb.1999
COMMUTATION CHARACTERISTICS
CR
ITIC
AL
RA
TE
OF
RIS
E O
F O
FF
-ST
AT
EC
OM
MU
TA
TIN
G V
OLT
AG
E (
V/µ
s)
RATE OF DECAY OF ON-STATECOMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)10
0 (%
)G
ATE
TRIG
GER
CU
RR
ENT
( tw)
GAT
E TR
IGG
ER C
UR
REN
T ( D
C)
101
103
75
32
100 2 3 5 7 101
102
75
32
2 3 5 7 102
4
4
4 4
IRGT III
IFGT I
IRGT I
IFGT III
TYPICAL EXAMPLE 101
75
32
10–1 2 3 5 7 100
100
75
32
2 3 5 7 101
4
4
4 410–1
TC = 125°CIT = 1Aτ = 500µsVD = 200V
TYPICAL EXAMPLE
I QUADRANT
III QUADRANTMINIMUMCHARAC-TERISTICSVALUE
MITSUBISHI SEMICONDUCTOR ⟨TRIAC⟩
BCR1AM-12LOW POWER USE
GLASS PASSIVATION TYPE
6Ω 6Ω
6Ω 6Ω
6V 6V
6V 6V
RG RG
RG RG
A
V
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
TEST PROCEDURE 4
GATE TRIGGER CHARACTERISTICSTEST CIRCUITS
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