bc517 epitaxial planar npn transistor

2
1999. 11. 30 1/2 SEMICONDUCTOR TECHNICAL DATA BC517 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) TO-92 DIM MILLIMETERS A B C D F G H J K L 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 MAX 2.30 D 1 2 3 B A J K G H F F L E C E C M N 0.45 MAX M 1.00 N 1. COLLECTOR 2. BASE 3. EMITTER + _ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 30 V Emitter-Base Voltage V EBO 10 V Collector Current I C 500 mA Collector Power Dissipation P C 625 mW Junction Temperature T j 150 Storage Temperature T stg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V (BR)CBO I C =0.1mA, I E =0 40 - - V Collector-Emitter Breakdown Voltage V (BR)CEO I C =10mA, I B =0 30 - - V Emitter-Base Breakdown Voltage V (BR)EBO I E =1.0mA, I C =0 10 - - V Collector Cut-off Current I CBO V CB =40V, I E =0 - - 1.0 A Emitter Cut-off Current I EBO V EB =10V, I C =0 - - 1.0 A DC Current Gain h FE I C =100mA, V CE =2V 30k - - Collector-Emitter Saturation Voltage V CE(sat) I C =100mA, I B =1mA - - 1.0 V Base-Emitter Saturation Voltage V BE(sat) I C =100mA, I B =1mA - 1.5 2.0 V Current Gain Bandwidth Product f T I C =100mA, V CE =2V, f=100MHz - 220 - MHz Collector Output Capacitance C ob V CB =10V, f=1MHz, I E =0 - 5.0 - pF

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  • 1999. 11. 30 1/2

    SEMICONDUCTORTECHNICAL DATA

    BC517EPITAXIAL PLANAR NPN TRANSISTOR

    Revision No : 1

    GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.

    MAXIMUM RATING (Ta=25 )

    TO-92

    DIM MILLIMETERSA

    B

    CD

    F

    G

    HJ

    K

    L

    4.70 MAX

    4.80 MAX

    3.70 MAX0.451.00

    1.27

    0.85

    0.4514.00 0.50

    0.55 MAX

    2.30

    D

    1 2 3

    B

    AJ

    KG

    H

    F F

    L

    E

    C

    E

    C

    M

    N

    0.45 MAXM

    1.00N

    1. COLLECTOR

    2. BASE

    3. EMITTER

    +_

    ELECTRICAL CHARACTERISTICS (Ta=25 )

    CHARACTERISTIC SYMBOL RATING UNIT

    Collector-Base Voltage VCBO 40 V

    Collector-Emitter Voltage VCEO 30 V

    Emitter-Base Voltage VEBO 10 V

    Collector Current IC 500 mA

    Collector Power Dissipation PC 625 mW

    Junction Temperature Tj 150

    Storage Temperature Tstg -55 150

    CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

    Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 40 - - V

    Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V

    Emitter-Base Breakdown Voltage V(BR)EBO IE=1.0mA, IC=0 10 - - V

    Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1.0 A

    Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1.0 A

    DC Current Gain hFE IC=100mA, VCE=2V 30k - -

    Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1.0 V

    Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=1mA - 1.5 2.0 V

    Current Gain Bandwidth Product fT IC=100mA, VCE=2V, f=100MHz - 220 - MHz

    Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 5.0 - pF

  • 1999. 11. 30 2/2

    BC517

    Revision No : 1

    10

    CO

    LL

    EC

    TO

    R C

    UR

    RE

    NT

    I

    (m

    A)

    C

    0

    COLLECTOR-EMITTER SATURATION CE(sat)

    I - V h - I

    CCOLLECTOR CURRENT I (mA)

    10

    FED

    C C

    UR

    RE

    NT

    GA

    IN h

    10

    CO

    LL

    EC

    TO

    R C

    UR

    RE

    NT

    I

    (m

    A)

    C

    BASE-EMITTER VOLTAGE V (V)BE

    I - V

    FE C

    -1 010

    110

    210

    310

    310

    104

    105

    106

    Ta=125 C

    Ta=25 C

    Ta=-55 C

    C CE(sat)

    VOLTAGE V (V)

    0.2 0.4 0.6 0.8 1.0 1.2

    0

    110

    210

    310

    Ta=1

    25 C

    Ta=

    25 C

    Ta=

    -55

    C

    C BE

    0

    110

    210

    310

    0.8 1.0 1.2 1.4 1.6 1.8

    P

    (m

    W)

    0

    C

    0

    AMBIENT TEMPERATURE Ta ( C)

    CP - Ta

    CO

    LL

    EC

    TO

    R P

    OW

    ER

    DIS

    SIPA

    TIO

    N

    25 50 75 100 125 150 175

    100

    200

    300

    400

    500

    625

    700