b1et2910a

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1/4 AN830 APPLICATION NOTE November 2003 Description The L6560 IC is especially designed to be used in lighting applications. In fact, the IC is very simple to use and its needs, in terms of external components, are minimized. Information about the use of the IC is given in the AN667; this section presents an overview of some circuits for ballast applications using L6560 in several configuration. The first application (see fig 1) is a standard boost topology suitable for high mains input with the target specifications as follows: The second one (see fig 2) is still a boost topology with high mains input but it has a lower output power. The target specifications are: Figure 1. V MAINS = 277VAC, V O = 450V, P O = 140W Figure 2. VM AINS = 277VAC, V O = 450V, P O = 70W Rated Mains V in(rms) = 277 Vac (+10% -15%) Max. Output Power P o = 140W Output Voltage V o = 450V Rated Mains V in(rms) = 277 Vac (+10% -15%) Max. Output Power P o = 70W Output Voltage V o = 450V 8 3 BRIDGE 4 x BY255 R9 1.8M 5% C1 0.22μF 630V R10 6.2K 5% C2 22μF 25V FUSE Vac R1 68K 5% T 5 6 L6560 7 2 1 C3 0.47μF/1μF R5 10 MOS STP6N60 R4 330 4 D1 BYT13-600 R7 1.1M 1% C5 47μF/68μF 250V Vo=450V Po=140W + - D95IN260A TRANSFORMER T: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 560μH R6 0.68 500mW R8 6.15K 1% C4 1nF + - C6 10nF 277V +10% -15% V CC R9 510K 5% R10 510K 5% C6 47μF/68μF 250V 8 3 BRIDGE 4 x BY255 R9 1.8M 5% C1 0.1μF 630V R10 6.2K 5% C2 22μF 25V FUSE Vac R1 68K 5% T 5 6 L6560 7 2 1 C3 0.47μF/1μF R5 10 MOS STP4NA60 R4 330 4 D1 BYT13-600 R7 1.1M 1% Vo=450V Po=70W + - D95IN261A TRANSFORMER T: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 710μH R6 1.5 250mW R8 6.15K 1% C4 1nF + - C6 10nF 277V +10% -15% V CC C5 22μF/47μF 250V R9 620K 5% R10 620K 5% C6 22μF/47μF 250V L6560/A PFC IN LAMP BALLAST APPLICATIONS

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Page 1: B1ET2910A

1/4

AN830APPLICATION NOTE

November 2003

DescriptionThe L6560 IC is especially designed to be used in lighting applications. In fact, the IC is very simple to useand its needs, in terms of external components, are minimized. Information about the use of the IC is givenin the AN667; this section presents an overview of some circuits for ballast applications using L6560 inseveral configuration.The first application (see fig 1) is a standard boost topology suitable for high mains input with the targetspecifications as follows:

The second one (see fig 2) is still a boost topology with high mains input but it has a lower output power.The target specifications are:

Figure 1. V MAINS = 277VAC, VO = 450V, PO = 140W

Figure 2. VM AINS = 277VAC, VO = 450V, PO = 70W

Rated Mains Vin(rms) = 277 Vac (+10% -15%)

Max. Output Power Po = 140W

Output Voltage Vo = 450V

Rated Mains Vin(rms) = 277 Vac (+10% -15%)

Max. Output Power Po = 70W

Output Voltage Vo = 450V

8

3

BRIDGE4 x BY255

R91.8M5%

C10.22µF630V

R106.2K5%

C222µF25V

FUSE

Vac

R168K 5%

T

5

6

L6560 7

2 1

C3 0.47µF/1µF

R5 10 MOSSTP6N60

R4 3304

D1 BYT13-600

R71.1M1%

C547µF/68µF

250V

Vo=450VPo=140W

+

-D95IN260A

TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 560µH

R6 0.68500mW

R86.15K

1%

C41nF

+

-

C610nF

277V +10%-15%

VCC

R9510K5%

R10510K5%

C647µF/68µF

250V

8

3

BRIDGE4 x BY255

R91.8M5%

C10.1µF630V

R106.2K5%

C222µF25V

FUSE

Vac

R168K 5%

T

5

6

L6560 7

2 1

C3 0.47µF/1µF

R5 10 MOSSTP4NA60

R4 3304

D1 BYT13-600

R71.1M1%

Vo=450VPo=70W

+

-D95IN261A

TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 710µH

R6 1.5250mW

R86.15K

1%

C41nF

+

-

C610nF

277V +10%-15%

VCC

C522µF/47µF

250V

R9620K5%

R10620K5%

C622µF/47µF

250V

L6560/A PFC IN LAMP BALLAST APPLICATIONS

Page 2: B1ET2910A

AN830 APPLICATION NOTE

2/4

Note: The core of the transformer is oversized for the rated power, ETD core is generally an "easy to use"low cost solution. For both the above described circuits, to sustain the high output voltage value,we suggest using two capacitor connected in series, 250V rated voltage each one.

The third solution (see fig 3) shows the same PFC configuration for a lower rated input mains, directed toa different market area.It can be noticed the lower rated parameter of some external components like MOS, D1, C1 and C5. Thetarget specifications are:

Figure 3. V MAINS = 120VAC, VO = 230V, PO = 70W

Here it is shown a different topology (see fig 4), suitable for PFC in lighting, that allows to keep the outputvoltage at an advantageous value even if the rated input mains value is high. This has been realized usinga "Level shift configuration" The target specifications are:

Figure 4. V MAINS = 277VAC, VO = 320V, PO = 140W, buck-boost topology

Note: This topology involves a peak inductor current higher than in the standard boost topology, so a big-ger EMI filter is necessary. An external E/A is used to shift the output feedback. The ground of thePFC section is not the same of the ballast one.

Rated Mains Vin(rms) = 120 ±20% Vac

Max. Output Power Po = 70W

Output Voltage Vo = 450V

Rated Mains Vin(rms) = 277 Vac (+10% -15%)

Max. Output Power Po = 140W

Output Voltage Vo = 320V

8

3

BRIDGE4 x BY255

R91.8M5%

C10.47µF250V

R1016K5%

C222µF25V

FUSE

Vac

R168K 5%

T

5

6

L6560 7

2 1

C3 0.47µF/1µF

R5 10 MOSSTP5N30

R4 3304

D1 BYT03-400

R71.1M1%

C547µF/82µF

315V

Vo=230VPo=70W

+

-D95IN262

TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 700µH

R6 0.5250mW

R812K1%

C41nF

+

-

C610nF

120V ±20%

VCC

8

3

BRIDGE4 x BY255

R91.8M5%

C10.22µF630V

R106.2K5%

C222µF25V

FUSE

Vac

R168K 5%

T

5

6

L6560 7

2 1

C3 330nF

R5 10

MOSSTP5N80

R4 3304

D1 BYT13-800 R21.3M1%

Vo=320VPo=140W

+

-

D95IN263A

TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 150T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) primary inductance: 3mH

R6 0.471W

R812K1%

C41nF

+

-

C610nF

277V +10%-15%

VCC

R12330K

R11 62K 1%

C582µF/100µF

385V

3

24

VCC

R3 12K 1%

8LM358

A

R71.3M1%

+

-

Page 3: B1ET2910A

3/4

AN830 APPLICATION NOTE

A flyback topology (see fig 5), allows the same advantages as the previous application with level shift con-figuration but with a common ground. The target specifications are:

Note: This last topology involves higher peak current in the transformer in comparison with the standardboost topology, this requiring a bigger EMI filter. The transformer assembly is more complicatedthan the inductor with the auxiliary winding used for the other applications.

Figure 5. Circuit with V MAINS = 277VAC, VO = 320V, PO = 140W, flyback topology

Finally, fig. 6 shows a block diagram of a common electronic ballast. The PFC section is based on thealready described L6560 PFC controller, and the ballast section is based on the L6569, high voltage push-pull gate driver.

Figure 6. Electronic ballast.

Rated Mains Vin(rms) = 277 Vac (+10% -15%)

Max. Output Power Po = 140W

Output Voltage Vo = 320V

8

3

BRIDGE4 x BY255

R21.8M5%

C10.22µF630V

R36.2K5%

C222µF25V

FUSE

Vac

R168K 5%

L1

5

6

L6560 7

2 1

C3 330nF

R5 10

MOSSTP5N80

R4 3304

D1 BYT13-800

Vo=320VPo=140W

+

-

D95IN264AINDUCTORS core THOMSON-CSF B1ET2910AL1: primary 100/110T of Litz wire 10 x 0.2mmL2: same as L1L3: secondary 7T of #32 AWG (0.15mm)

R6 0.471W

R812K1%

C41nF

+

-

C610nF

277V +10%-15%

VCC

C582µF/100µF

385V

R71.3M1%L3

L2

L6569HVHB

DRIVER

BOOT

RF

CF

CVS VS

HVG

OUT

LVG

GND

L6560P.F.C.

CBOOT

220VAC

RVH 400VDC

D95IN306A

Page 4: B1ET2910A

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners

© 2003 STMicroelectronics - All rights reserved

STMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United Stateswww.st.com

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AN830 APPLICATION NOTE