b1et2910a
DESCRIPTION
DATASHEET OF B1ET2910ATRANSCRIPT
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AN830APPLICATION NOTE
November 2003
DescriptionThe L6560 IC is especially designed to be used in lighting applications. In fact, the IC is very simple to useand its needs, in terms of external components, are minimized. Information about the use of the IC is givenin the AN667; this section presents an overview of some circuits for ballast applications using L6560 inseveral configuration.The first application (see fig 1) is a standard boost topology suitable for high mains input with the targetspecifications as follows:
The second one (see fig 2) is still a boost topology with high mains input but it has a lower output power.The target specifications are:
Figure 1. V MAINS = 277VAC, VO = 450V, PO = 140W
Figure 2. VM AINS = 277VAC, VO = 450V, PO = 70W
Rated Mains Vin(rms) = 277 Vac (+10% -15%)
Max. Output Power Po = 140W
Output Voltage Vo = 450V
Rated Mains Vin(rms) = 277 Vac (+10% -15%)
Max. Output Power Po = 70W
Output Voltage Vo = 450V
8
3
BRIDGE4 x BY255
R91.8M5%
C10.22µF630V
R106.2K5%
C222µF25V
FUSE
Vac
R168K 5%
T
5
6
L6560 7
2 1
C3 0.47µF/1µF
R5 10 MOSSTP6N60
R4 3304
D1 BYT13-600
R71.1M1%
C547µF/68µF
250V
Vo=450VPo=140W
+
-D95IN260A
TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 560µH
R6 0.68500mW
R86.15K
1%
C41nF
+
-
C610nF
277V +10%-15%
VCC
R9510K5%
R10510K5%
C647µF/68µF
250V
8
3
BRIDGE4 x BY255
R91.8M5%
C10.1µF630V
R106.2K5%
C222µF25V
FUSE
Vac
R168K 5%
T
5
6
L6560 7
2 1
C3 0.47µF/1µF
R5 10 MOSSTP4NA60
R4 3304
D1 BYT13-600
R71.1M1%
Vo=450VPo=70W
+
-D95IN261A
TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 710µH
R6 1.5250mW
R86.15K
1%
C41nF
+
-
C610nF
277V +10%-15%
VCC
C522µF/47µF
250V
R9620K5%
R10620K5%
C622µF/47µF
250V
L6560/A PFC IN LAMP BALLAST APPLICATIONS
AN830 APPLICATION NOTE
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Note: The core of the transformer is oversized for the rated power, ETD core is generally an "easy to use"low cost solution. For both the above described circuits, to sustain the high output voltage value,we suggest using two capacitor connected in series, 250V rated voltage each one.
The third solution (see fig 3) shows the same PFC configuration for a lower rated input mains, directed toa different market area.It can be noticed the lower rated parameter of some external components like MOS, D1, C1 and C5. Thetarget specifications are:
Figure 3. V MAINS = 120VAC, VO = 230V, PO = 70W
Here it is shown a different topology (see fig 4), suitable for PFC in lighting, that allows to keep the outputvoltage at an advantageous value even if the rated input mains value is high. This has been realized usinga "Level shift configuration" The target specifications are:
Figure 4. V MAINS = 277VAC, VO = 320V, PO = 140W, buck-boost topology
Note: This topology involves a peak inductor current higher than in the standard boost topology, so a big-ger EMI filter is necessary. An external E/A is used to shift the output feedback. The ground of thePFC section is not the same of the ballast one.
Rated Mains Vin(rms) = 120 ±20% Vac
Max. Output Power Po = 70W
Output Voltage Vo = 450V
Rated Mains Vin(rms) = 277 Vac (+10% -15%)
Max. Output Power Po = 140W
Output Voltage Vo = 320V
8
3
BRIDGE4 x BY255
R91.8M5%
C10.47µF250V
R1016K5%
C222µF25V
FUSE
Vac
R168K 5%
T
5
6
L6560 7
2 1
C3 0.47µF/1µF
R5 10 MOSSTP5N30
R4 3304
D1 BYT03-400
R71.1M1%
C547µF/82µF
315V
Vo=230VPo=70W
+
-D95IN262
TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 90T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) gapped for a total primary inductance of 700µH
R6 0.5250mW
R812K1%
C41nF
+
-
C610nF
120V ±20%
VCC
8
3
BRIDGE4 x BY255
R91.8M5%
C10.22µF630V
R106.2K5%
C222µF25V
FUSE
Vac
R168K 5%
T
5
6
L6560 7
2 1
C3 330nF
R5 10
MOSSTP5N80
R4 3304
D1 BYT13-800 R21.3M1%
Vo=320VPo=140W
+
-
D95IN263A
TRANSFORMERT: core THOMSON-CSF B1ET2910A primary 150T of Litz wire 10 x 0.2mm secondary 7T of #32 AWG (0.15mm) primary inductance: 3mH
R6 0.471W
R812K1%
C41nF
+
-
C610nF
277V +10%-15%
VCC
R12330K
R11 62K 1%
C582µF/100µF
385V
3
24
VCC
R3 12K 1%
8LM358
A
R71.3M1%
+
-
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AN830 APPLICATION NOTE
A flyback topology (see fig 5), allows the same advantages as the previous application with level shift con-figuration but with a common ground. The target specifications are:
Note: This last topology involves higher peak current in the transformer in comparison with the standardboost topology, this requiring a bigger EMI filter. The transformer assembly is more complicatedthan the inductor with the auxiliary winding used for the other applications.
Figure 5. Circuit with V MAINS = 277VAC, VO = 320V, PO = 140W, flyback topology
Finally, fig. 6 shows a block diagram of a common electronic ballast. The PFC section is based on thealready described L6560 PFC controller, and the ballast section is based on the L6569, high voltage push-pull gate driver.
Figure 6. Electronic ballast.
Rated Mains Vin(rms) = 277 Vac (+10% -15%)
Max. Output Power Po = 140W
Output Voltage Vo = 320V
8
3
BRIDGE4 x BY255
R21.8M5%
C10.22µF630V
R36.2K5%
C222µF25V
FUSE
Vac
R168K 5%
L1
5
6
L6560 7
2 1
C3 330nF
R5 10
MOSSTP5N80
R4 3304
D1 BYT13-800
Vo=320VPo=140W
+
-
D95IN264AINDUCTORS core THOMSON-CSF B1ET2910AL1: primary 100/110T of Litz wire 10 x 0.2mmL2: same as L1L3: secondary 7T of #32 AWG (0.15mm)
R6 0.471W
R812K1%
C41nF
+
-
C610nF
277V +10%-15%
VCC
C582µF/100µF
385V
R71.3M1%L3
L2
L6569HVHB
DRIVER
BOOT
RF
CF
CVS VS
HVG
OUT
LVG
GND
L6560P.F.C.
CBOOT
220VAC
RVH 400VDC
D95IN306A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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AN830 APPLICATION NOTE