This is information on a product in full production.

September 2014 DocID026896 Rev 1 1/12

STB130NS04ZB-1

Automotive-grade N-channel clamped, 7 mΩ typ., 80 A fullyprotected Mesh overlay™ Power MOSFET in a I2PAK package

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and AEC-Q101 qualified

• 100% avalanche tested

• Low capacitance and gate charge

• 175°C maximum junction temperature

Applications• High switching current

• Linear applications

DescriptionThis fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, such as those encountered in the automotive environment. The device is also well-suited for other applications where extra ruggedness is required.

Type VDSRDS(on) max.

ID

STB130NS04ZB-1 Clamped 9 mΩ 80 A

Table 1. Device summary

Order code Marking Package Packaging

STB130NS04ZB-1 B130NS04ZB I2PAK Tube

www.st.com

Contents STB130NS04ZB-1

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Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STB130NS04ZB-1 Electrical ratings

12

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage Clamped V

VGS Gate-source voltage Clamped V

ID Drain current (continuous) at TC = 25°C 80 A

ID Drain current (continuous) at TC = 100°C 60 A

IDG Drain gate current (continuous) ± 50 mA

IGS Gate source current (continuous) ± 50 mA

IDM(1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 320 A

PTOT Total dissipation at TC = 25°C 300 W

Derating factor 2.0 W/°C

ESDGate-source human body modelC=100 pF, R=1.5 kΩ 4 kV

TJ

Tstg

Operating junction temperatureStorage temperature

-55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case Max 0.50 °C/W

Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IASAvalanche current, repetitive or not-repetitive(pulse width limited by Tj Max)

80 A

EASSingle pulse avalanche energy(starting Tj=25°C, Id=Iar, Vdd=30V)

500 mJ

Electrical characteristics STB130NS04ZB-1

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2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 1 mA, VGS = 0-40 < Tj < 175 °C

33 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 16 VVDS = 16 V,Tj = 125 °C

10100

µAµA

IGSSGate body leakage current(VDS = 0)

VGS = ±10 V 10 nA

VGSSGate-source breakdown voltage

IGS= ± 100μA 18 V

VGS(th) Gate threshold voltage VDS = VGS = ID = 1 mA 2 4 V

RDS(on)Static drain-source on resistance

VGS = 10 V ,ID = 40 A 7 9 mΩ

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance VDS =15V, ID = 40A - 50 S

Ciss Input capacitance

VDS =25V, f=1 MHz, VGS=0

- 2700 pF

Coss Output capacitance - 1275 pF

CrssReverse transfer capacitance

- 285 pF

Qg Total gate charge VDD=20V, ID = 80A VGS =10V

(see Figure 15)

- 80 105 nC

Qgs Gate-source charge - 20 nC

Qgd Gate-drain charge - 27 nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 17.5 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 14)

- 40 - ns

tr Rise time - 10 - ns

td(off) Turn-off delay time - 220 - ns

tf Fall time - 100 - ns

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STB130NS04ZB-1 Electrical characteristics

12

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current - 80 A

ISDM(1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 320 A

VSD(2)

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage ISD=80A, VGS=0 - 1.5 V

trr Reverse recovery time ISD=80A,

di/dt = 100A/µs,VDD=25V, Tj=150°C(see Figure 16)

- 90 ns

Qrr Reverse recovery charge - 0.18 µC

IRRM Reverse recovery current - 4 A

Electrical characteristics STB130NS04ZB-1

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2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

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STB130NS04ZB-1 Electrical characteristics

12

Figure 8. Gate charge vs gate-source voltage Figure 9. Normalized on resistance vs temperature

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Source-drain diode forward characteristics

Figure 12. Capacitance variations Figure 13. Normalized BVDSS vs temperature

Test circuit STB130NS04ZB-1

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3 Test circuit

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped Inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

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STB130NS04ZB-1 Package mechanical data

12

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Package mechanical data STB130NS04ZB-1

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Figure 20. I²PAK (TO-262) drawing

Table 9. I²PAK (TO-262) mechanical data

DIM.mm.

min. typ max.

A 4.40 4.60

A1 2.40 2.72

b 0.61 0.88

b1 1.14 1.70

c 0.49 0.70

c2 1.23 1.32

D 8.95 9.35

e 2.40 2.70

e1 4.95 5.15

E 10 10.40

L 13 14

L1 3.50 3.93

L2 1.27 1.40

0004982_Rev_H

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STB130NS04ZB-1 Revision history

12

5 Revision history

Table 10. Revision history

Date Revision Changes

16-Sep-2014 1 First release.

STB130NS04ZB-1

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