au flash pd coated copper wire for ic applications · au flash pd coated copper wire for ic...
TRANSCRIPT
![Page 1: Au Flash Pd Coated Copper Wire for IC Applications · Au Flash Pd Coated Copper Wire for IC Applications 180 160 140 120 100 80 60 USG Current [mA] 10 20 40 60 80 100 120 Ref. CuPd](https://reader030.vdocuments.us/reader030/viewer/2022040612/5edd5deaad6a402d66686ec0/html5/thumbnails/1.jpg)
Benefits & Features § Robust 2nd bond performance § Higher stitch pull § Wider 2nd bond process window than CuPd wire § Available in diameter ranging from 0.6 – 2.0 mil
Copper
Palladium
Gold Flash
Au Flash Pd Coated Copper Wire for IC Applications
1801601401201008060
USG Current [mA]
10 20 40 60 80 100 120
Ref. CuPd
Wire Diameter: 0.7 mil, Device Type: PBGA, Capillary part #: K&S C8-FG-1034-P37 (H:8.5, CD:10.5, T:23, OR:1, FA:11), Bonder Type: ProCu, Bonding Temperature: 160 °C
6.0
5.5
5.0
4.5
4.0
3.5
3.0Ref. CuPd
Wire Diameter: 0.7 mil, Device Type: PBGA, Capillary part #: K&S C8-FG-1034-P37 (H:8.5, CD:10.5, T:23, OR:1, FA:11), Bonder Type: ProCu, Bonding Temperature: 160 °C
2nd Bond Process Window Stitch Pull
Recommended Technical Data of
Diameter Microns (µm) 15 18 20 23 25 28 30 33 38 50
Mils 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.5 2.0
Elongation (%) 5 – 11 7 – 13 9 – 15 10 – 16 11 – 17 13 – 19 14 – 20 15 – 21 13 – 19 14 – 20
Breaking Load (g) 3 – 7 5 – 10 7 – 14 9 – 17 11 – 19 15 – 26 17 – 30 19 – 35 25 – 40 50 – 70
* For purpose of illustration only.
For other diameters, please contact Heraeus Bonding Wires sales representative.
![Page 2: Au Flash Pd Coated Copper Wire for IC Applications · Au Flash Pd Coated Copper Wire for IC Applications 180 160 140 120 100 80 60 USG Current [mA] 10 20 40 60 80 100 120 Ref. CuPd](https://reader030.vdocuments.us/reader030/viewer/2022040612/5edd5deaad6a402d66686ec0/html5/thumbnails/2.jpg)
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Characteristics for 0.7 mil diameter
EL [%] Modulus [GPa] Tensile Stress [MPa]
SEM-EDX Analysis
Physical Properties
Density* 9.03 g/cm3
Melting Point* 1081 °C
Thermal Conductivity* 401 W/m.K
Specific Heat Capacity @ 25 °C* 352 J/kg.K
Coeff. of Thermal Expansion* 16.6 (µm/m °C, 20 – 100 °C)
Electrical Resistivity 1.8 µΩ-cm
FAB Hardness 92 – 105 HV (0.01 N/5 s)
Wire Hardness 95 – 105 HV (0.01 N/5 s)
Elastic Modulus 90 – 100 GPa
Chemical Composition
Pd + Au 1.5 % – 2.5 %
Cu Purity 99.98 % min
Other Guidelines
Floor Life 60 days
Shelf Life Time 6 months
Shielding Gas N2 / Forming Gas* Based on Core Material
Full Scale 172 cts Cursor: -0.203 (0 cts) 0 1 2 3 4 5
C
Cu
Au
Pd
S1
S1
EDX at 5 kV
12
10
8
6
4
2
0
120
100
80
60
40
20
0
300
250
200
150
100
50
0
EL [%
]
Mod
ulus
[GPa
]
Tens
ile S
tres
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Pa]
Ref. CuPd Ref. CuPd Ref. CuPdWire diameter: 0.7 mil
Heraeus ElectronicsHeraeus Deutschland GmbH & Co. KG Heraeusstraße 12-1463450 Hanau, Germanywww.heraeus-electronics.com
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The descriptions and engineering data shown here have been compiled by Heraeus using commonly-accepted procedures, in conjunction with modern testing equipment, and have been compiled as according to the latest factual knowledge in our possession. The information was up-to date on the date this document was printed (latest versions can always be supplied upon request). Although the data is considered accurate, we cannot guarantee accuracy, the results obtained from its use, or any patent infringement resulting from its use (unless this is contractually and explicitly agreed in writing, in advance). The data is supplied on the condition that the user shall conduct tests to determine materials suitability for particular application.