applied endura amber pvd amber launch_level 0_062… · applied endura ® amber™ pvd system ......
TRANSCRIPT
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
Applied Endura® Amber™ PVD Advancing a New Era in Copper Gap Fill for Nanoscale Interconnects
Sundar Ramamurthy, Ph.D.
Appointed Vice President
General Manager, Metal Deposition Products
Silicon Systems Group
July 10, 2012
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP 2
ASIC Cross-Section
Via
Wire
Via
Wire
Flash Cross-Section
NAND Leads the Scaling, Logic Right Behind
Smallest gap to be filled today
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP 3
Source : ITRS 2010 and 2011 roadmaps
Critica
l M
eta
l F
ea
ture
Siz
e (
nm
)
0
10
20
30
40
50
80
2006 2008 2010 2012 2014 2016
70
60
Logic / ASIC
NAND Flash
New Era of Nanoscale Interconnects
New fill solution required
Nanoscale
Interconnects
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
Interconnect Challenges Beyond 20nm
4
Conformal seed makes conventional plating challenging below 20nm
+ Conventional Plating =
>12 nm
4:1
<10 nm
>7:1 Voids
Complete
Fill
Above 20nm
+ Conventional Plating =
Below 20nm
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
Logic has Less Room for Error
5
Yie
ld L
oss
Fro
m S
ingle
Via
Fail
0%
5%
10%
15%
20%
30%
0 0.005 0.01
25%
40 nm
Via Defect Level (DPPM)
65 nm
90 nm
130 nm
1DPPB
28 nm 20 nm
Source: NVIDIA Corporation 2011
Zero Defect for Vias, Quality in Perfection
Tota
l Length
of
(1x p
itch)
Me
tal L
ine
s (
m)
0
200
400
600
800
1,000
1,600
130 nm 90 nm 65 nm 40 nm
1,400
1,200
Metal Length
Total Via #
Single Via #
Technology Nodes
0
200
400
600
800
1000
1600
1400
1200
1800
2000
Normalized to
1cm x 1cm area
Via
Count (m
illio
n)
Source: NVIDIA Corporation 2011
One void can have a major
impact on yield
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Introducing the Revolutionary
Applied Endura® Amber™ PVD System
6 6 SILICON SYSTEMS GROUP External Use
Innovation built on Endura
ionized PVD
Thermal reflow for bottom up
copper fill
Fundamentally robust
to address technology scaling
Revolutionary architecture
opens new era
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
Applied Endura Amber PVD Built on 20 Years of PVD Leadership
7
Amber PVD provides the ideal deposition profile to promote reflow
Ionized
PVD Void
Thermal Reflow
Thermal Reflow
Selective
Deposition (Endura RFX Cu)
Amber PVD
x y
x << y Energy
Directionality
Cu+ Ionization
y
x x
y
y y
x x
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
How Does Reflow Work in Amber PVD?
8
Thermal Energy Cold Deposition
Increased surface
mobility, grain
coalescence
Mass movement of surface copper by
enhanced diffusion, and capillary action
Copper reflow to enable bottom-up, defect free fill
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
The Magic of Amber Capillary Action Works Better on Smaller Features
9
Smaller size tube shows
stronger capillary effect
(interconnect via structure)
Fill gets better with scaling – Amber PVD is an
extendible solution for future nodes
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60
SILICON SYSTEMS GROUP
20 Years of Endura PVD Innovation
≥ 0.75 0.35m 90 65nm 45 20nm < 20nm
10
Amber PVD Ionized PVD Standard PVD
Endura continues to enable Cu interconnect
scaling through PVD innovations
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Applied Endura® Amber™ PVD System Advancing a New Era in Copper Gap Fill for Nanoscale Interconnects
Ionized PVD and thermal reflow to
enable void-free bottom up Cu fill
Extendible technology fills anything
Revolutionary architecture expands
application flexibility
Endura continues to enable copper
interconnect scaling
External Use 11 SILICON SYSTEMS GROUP External Use
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External Use
R 140
G 140
B 140
R 220
G 220
B 220
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 234
G 40
B 57
R 155
G 238
B 255
R 146
G 212
B 0
R 75
G 75
B 75
R 6
G 30
B 60