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Appendix: 1 Index of Substances 299

Appendix

1 Index of Substances

In the following index all substances occuring in this volume are listed. In the first column the gross formulae of the

substances are given in alphabetical order of their constituting elements. The second column lists the gross formulae

in the order used in the literature and in the chapters of this volume.

Gross formula Page Gross formula Page

AgAIGeSe4 AgAIGeSe4 225 Ag2Se3Sn Ag2SnSe3 219

AgAlSnSe4 AgAISnSe4 226 Ag2SnTe3 Ag2SnTe3 219

AgAlTe2 AgAlTe2 213 Ag2Te Ag2Te 170

AgAsS2 AgAsS2 227 Ag3AsS3 Ag3AsS3 229

AgAsSe2 AgAsSe2 227 Ag3GegSe9 Ag3GegSe9 235

AgAsTe2 AgAsTe2 227 Ag3In5Se9 Ag3In5Se9 235

AgBiS2 AgBiS2 228 Ag3SSb Ag3SbS 229

AgBiSe2 AgBiSe2 228 AggGeS6 AggGeS6 225

AgBiTe2 AgBiTe2 228 AggGeSe6 AggGeSe6 226

AgBr AgBr 172 AggGeTe6 AggGeTe6 227

AgCl AgCl 172 AggS6Sn AggSnS6 226

AgF AgF 172 AggSe6Si AggSiSe6 226

AgFeSe2 AgFeSe2 215 AggSe6Sn AggSnSe6 226

AgFeTe2 AgFeTe2 215 AlAs AlAs 75

AgGaGeSe4 AgGaGeSe4 225 AlB 12 AlB 12 238

AgGaS2 AgGaS2 214 AlB14Li LiAlB14 237

AgGaSe2 AgGaSe2 214 AlCuGeSe4 CuAlGeSe4 226

AgGaSnSe4 AgGaSnSe4 225 AlCuS2 CuAlS2 211

AgGaTe2 AgGaTe2 214 AlCuSe2 CuAlSe2 211

AgI AgI 172 AlCuSe4Sn CuAlSnSe4 226

AgIn3Te5 AgIn3Te5 236 AlCuTe2 CuAlTe2 211

AgIn5Sg AgIn5Sg 236 AlN AIN 69

AgIn9Te14 AgIn9Te14 236 AlP AlP 72

AgInGeSe4 AgInGeSe4 225 AlSb AlSb 80

AgInS2 AgInS2 214 As As 161

AgInSe2 AgInSe2 215 AsB BAs 68 AgInSe4Sn AglnSnSe4 226 AsBrS AsSBr 233

AglnTe2 AgInTe2 215 AsCoS CoAsS 243

AgS2Sb AgSbS2 228 AsCoSe CoAsSe 243

AgSbSe2 AgSbSe2 228 ASCU3S3 CU3AsS3 229

AgSbTe2 AgSbTe2 228 ASCU3S4 CU3AsS4 221

Ag2GeSe3 Ag2GeSe3 220 AsCu3Se4 CU3AsSe4 221

Ag2GeTe3 Ag2GeTe3 220 AsFeS FeAsS 243

Ag20 Ag20 169 AsFeSe FeAsSe 243

Ag2S Ag2S 169 AsGa GaAs 101 Ag2Se Ag2Se 169 AsGe GeAs 196

300 Appendix: 1 Index of Substances


AsIJ AsIJ 208 B6Ba BaB6 237 Asln InAs 133 B6Ca CaB6 237 AslrSb IrAsSb 239 B6Eu EuB6 238 AsOsS OsAsS 243 B6K KB6 237 AsPPd PdPAs 239 B6P B6P 238 AsPPt PtPAs 239 B6Sm 5mB6 238 AsPRu RuPAs 238 B6Sr SrB6 237 AsRuS RuAsS 243 B6Yb YbB6 238 ASS2Tl TlAsS2 231 BI5Na NaBI5 237 AsSi SiAs 196 B24CU CUB24 237 AS2BrJCd4 Cd4As2BrJ 236 B66Gd GdB66 238 AS2Cd CdAs2 179 B66Sm 5mB66 238 AS2CdJ CdJAs2 177 B66Y YB66 238 AS2Cd4Cb Cd4As2Cb 236 B66Yb YbB66 238 AS2Cd4IJ Cd4As2IJ 236 BaCr2S4 BaCr2S4 243 AS2CdGd CdGeAs2 218 BaGe2 BaGe2 175 AS2CdSi CdSiAs2 218 BaO BaO 181 AS2CdSn CdSnAs2 219 BaOJTi BaTiOJ 244 AS2CO COAS2 239 BaSi2 BaSi2 175 AS2Fe FeAs2 238 BeS BeS 180 AS2Ge GeAs2 197 BeSe BeSe 180 AS2GeZn ZnGeAs2 217 BeTe BeTe 180 AS2Ir IrAs2 239 Bi Bi 162

AS2MgJ MgJAs2 175 BiBrO BiOBr 234 AS2Ni NiAs2 239 BiBrS BiSBr 234

AS20S OSAS2 239 BiBrSe BiSeBr 234 As2Pt PtAs2 239 BiBrTe BiTeBr 235 AS2Rh RhAs2 239 BiCiTe2 CuBiTe2 229 AS2Ru RuAs2 238 BiClO BiOCI 234 AS2SJ AS2SJ 205 BiClS BiSCI 234 AS2SeJ AS2SeJ 205 BiCsJ CSJBi 166 AS2SiZn ZnSiAs2 216 BiCuSe2 CuBiSe2 229 AS2SnZn ZnSnAs2 217 BiIJ BiIJ 208 AS2TeJ AS2TeJ 205 BiIO BiOI 234 AS2Zn ZnAs2 178 BilS BiSI 234

AS2ZnJ ZnJAs2 176 BiISe BiSel 235

ASJCo CoAsJ 239 BiITe BiTel 235

AS4S4 AS4S4 207 BiLiJ LiJBi 155 AuCs CsAu 164 BiRbJ RbJBi 166 AuRb RbAu 164 BiS2Tl TlBiS2 231 B B 160 BiSe2Tl TlBiSe2 231

BI-xHx BI_xHx 237 BiTe2Tl TlBiTe2 231 BN BN 60 Bi2GeTe4 GeBi2Te4 232 BP BP 65 Bi20J Bi20J 206

B4C B4C 238 Bi207Pt2 Bi2Pt207 244

Appendix: I Index of Substances 301


Bi2S3 Bi2S3 206 CdPr2S4 CdPr2S4 246

Bi2Se3 Bi2Se3 207 CdS CdS 185

BbTe3 Bi2Te3 207 CdS2TI CdTlS2 230

Bi4GeTe7 GeBi4Te7 233 CdS4Cd2 CdSC2S4 246

Bi4PbTe7 PbBi4Te7 233 CdS4Tm2 CdTm2S4 246

Bi12Ge02o Bi12Ge020 232 CdS4Yb2 CdYb2S4 246

Bi12Si020 Bi12Si020 232 CdSb CdSb 178

BrCu CuBr 171 CdSe CdSe 185

BrSbSe SbSeBr 233 CdSe2Tl CdTlSe2 230

BrSSb SbSBr 233 CdSe4TI2 CdTl2Se4 223

BrTI TlBr 195 CdTe CdTe 186

Br2Cd CdBr2 188 CdTe2Tl CdTlTe2 230

Br2Hg HgBr2 189 Cd204Sn Cd2Sn04 236

Br2Pb PbBr2 204 Cd3P2 Cd3P2 177

Br3Cd4P2 Cd4P2Br3 236 Cd4Cl}P2 Cd4P2Cl} 236

C C (Diamond) 5 Cd4I3P2 Cd4P2I3 236

CSi SiC 47 Cd4Sb3 Cd4Sb3 177

CaO CaO 181 Cd6P7 Cd6P7 180

Ca03V CaV03 244 Cd7PlO Cd7PlO 179

Ca2Pb Ca2Pb 175 Ce03V CeV03 244

Ca2Si Ca2Si 174 Ce2GeSeS Ce2GeSeS 246

Ca2Sn Ca2Sn 174 Ce2S3 Ce2S3 242

CdCl2 CdCIz 188 Ce2SeSSn Ce2SnSeS 246

CdCr2S4 CdCr2S4 244 ClCu CuCI 171

CdCr2Se4 CdCr2Se4 243 ClTl TICI 195

CdDY2S4 CdDY2S4 246 Cl2Hg HgCl2 188

CdEr2S4 CdEr2S4 246 CIzPb PbCl2 204

CdGa2S4 CdGa2S4 222 COo·3NbS2 Coo.3NbS2 244

CdGa2Se4 CdGa2Se4 222 CoLa03 LaCo03 245

CdGa2Te4 CdGa2Te4 222 CoO CoO 239

CdGeP2 CdGeP2 218 COP2 COP2 239

CdI2 CdI2 188 COP3 COP3 239

CdIn2S4 CdIn2S4 223 CoPS CoPS 243

CdIn2Se4 CdIn2Se4 223 COSb2 COSb2 239

CdIn2Te4 CdIn2Te4 223 COSb3 COSb3 239

CdInS2 CdlnS2 230 CoSSb CoSbS 243

CdInSe2 CdlnSe2 230 C0304 C0304 239

CdInTe2 CdInTe2 230 C030gV2 C03V20g 244

CdLa2S4 CdLa2S4 246 Crl_x Te Crl_x Te 240

CdO CdO 184 CrDy0 3 DyCr03 244

Cd03Sn CdSn03 236 CrHo03 HoCr03 245

CdP2 CdP2 179 CrK20 4 K2Cr04 244

CdP2Si CdSiP2 218 CrLa03 LaCr03 244

CdP2Sn CdSnP2 219 CrNd03 NdCr03 244

CdP4 CdP4 179 Cr03Sm SmCr03 244



Cr03Yb YbCr03 245 CU2GeS4Zn CU2ZnGeS4 225 CrSb2 CrSb2 238 CU2GeSe3 CU2GeSe3 220 CrSi2 CrSi2 238 CU2GeSe4Zn CU2ZnGeSe4 225 Cr2HgS4 HgCr2S4 243 CU2Ill4Te7 CU2Ill4Te7 236 Cr2HgSe4 HgCr2Se4 243 CU20 CU20 167 Cr203 Cr203 239 CU2S3Sn CU2SnS3 220 Cr2S3 Cr2S3 240 CU2S4SiZn CU2ZnSiS4 225 Cr2Se4Zn ZnCr2Se4 243 CU2Se3Sn CU2SnSe3 220 Cr2+xSe3 Cr2+xSe3 240 CU2Se4SiZn CU2ZnSiSe4 225 Cr3Se4 Cr3Se4 240 CU3DyS3 CU3DyS3 245 CSK2Sb K2CSSb 166 CU3DySe3 CU3DySe3 245 CsNa2Sb Na2CsSb 166 CU3DyTe3 CU3DyTe3 245 CsRb2Sb Rb2CSSb 166 CU3ErTe3 CU3ErTe3 245 CsSb CsSb 165 CU3GaSSe9 CU3GaSSe9 235 CS3Sb CS3Sb 166 CU3GdS3 CU3GdS3 245

CuxS CuxS 168 CU3GdSe3 CU3GdSe3 245 CuxSe CuxSe 168 CU3GdTe3 CU3GdTe3 245 CuxTe CuxTe 168 CU3HoS3 CU3HoS3 245 CUCr2S2.5Sel.5 CUCr2S2.5Sel.5 243 CU3HoSe3 CU3HoSe3 245 CuCr2S3Se CuCr2S3Se 243 CU3HoTe3 CU3HoTe3 245 CuF CuF 170 CU3InsSe9 CU3InsSe9 235 CuFe204 CuFe204 244 CU3LuS3 CU3LuS3 245 CuFeS2 CuFeS2 215 CU3PS4 CU3PS4 221 CuFeSe2 CuFeSe2 215 CU3S3Sb CU3SbS3 228 CuFeTe2 CuFeTe2 215 CU3S3SC CU3SCS3 245 CuGaGeSe4 CuGaGeSe4 226 CU3S3Sm CU3SmS3 245 CuGaS2 CuGaS2 212 CU3S3Tb CU3TbS3 245 CuGaSe2 CuGaSe2 212 CU3S3Y CU3YS3 245 CuGaSe4Sn CuGaSnSe4 226 CU3S3Yb CU3YbS3 245 CuGaTe2 CuGaTe2 222 CU3S4Sb CU3SbS4 221 CuGeInSe4 CuInGeSe4 226 CU3SbSe4 CU3SbSe4 221 CuI CuI 171 CU3Se3Sc CU3ScSe3 245 CuIn3Tes CuIn3Tes 236 CU3Se3Sm CU3SmSe3 245 CuInS2 CuInS2 215 CU3Se3Tb CU3TbSe3 245 CuInSe2 CuInSe2 215 CU3Se3 Y CU3YSe3 245 CuInSe4Sn CuInSnSe4 226 CU3Se3Yb CU3YbSe3 245 CuInTe2 CuInTe2 215 CU3SmTe3 CU3SmTe3 245

CULi303 Li3CU03 236 CU3TbTe3 CU3TbTe3 245 CuO CuO 167 CU3Te3Tm CU3TmTe3 245

CuS2Sb CUSbS2 228 CU3Te3Y CU3YTe3 245 CuS2T1 CuTIS2 213 CU4Ge3SS CU4Ge3SS 227 CuSbSe2 CuSbSe2 228 CU4Ge3Ses CU4Ge3SeS 227 CuSbTe2 CuSbTe2 229 CU4S4Sn CU4SnS4 227

CU2G~Te7 CU2G~Te7 235 CU4SeSSn3 CU4Sn3Ses 227

CU2GeS3 CU2GeS3 219 CuSGdSe4 CuSGdSe4 245



CUSHOS4 CUSHOS4 245 Ga2HgSe4 HgGa2Se4 223

CUSLUS4 CUSLUS4 245 Ga2MnS4 MnGa2S4 243 CUSLuSe4 CUsLuSe4 245 Ga2S3 Ga2S3 209

CUsSe4Tb CUsTbSe4 245 Ga2Se3 Ga2Se3 210 CusSe4Yb CusYbSe4 245 Ga2Te3 Ga2Te3 210 CUgGeS6 CUgGeS6 227 G~SbsTe G~SbsTe 231 Dy0 3V DyV03 244 GdFe03 GdFe03 245

DY2S3 DY2S3 242 Gd03Ti GdTi03 244 Er03Ti ErTi03 244 Gd03V GdV03 244 Er03V ErV03 244 Gd2GeSeS Gd2GeSes 246 EuO EuO 242 Gd2S3 Gd2S3 242 EU03V EUV03 242 Gd2SeSSn Gd2SnSeS 246 EuS EuS 242 Ge Ge 28 EuSe EuSe 242 GeMg2 Mg2Ge 174 EuTe EuTe 242 GeN2Zn ZnGeN2 217 EU2Se3 EU2Se3 242 GeNd2SeS Nd2GeSeS 246 EU3S4 EU3S4 242 Ge02 Ge02 200

F2Pb PbF2 203 GeP GeP 196 Feo.3NbS2 FeO.3NbS2 244 GeP2Zn ZnGeP2 217 Fel_xS Fel_xS 241 GePbS3 PbGeS3 203

FeCr2S4 FeCr2S4 243 GePr2Ses Pr2GeSeS 246 FeHo03 HoFe03 245 GeS GeS 197 FeLa03 LaFe03 245 GeS2 GeS2 197 FeO FeO 239 GeS3Sn SnGeS3 203 FeP2 FeP2 238 GeSb2Te4 GeSb2Te4 232 FeP4 FeP4 239 GeSb4Te7 GeSb4Te7 232 FePS FePS 243 GeSe GeSe 198 FeS2 FeS2 241 GeSe2 GeSe2 201 FeSb2 FeSb2 238 GeSeSSm2 Sm2GeSeS 246 FeSbTe FeSbTe 243 GeTe GeTe 198 FeSe2_x FeSe2_x 241 Ge2Sr SrGe2 175 FeSi2 FeSh 238 Ge3Ru2 RU2Ge3 238

Fe203 Fe203 239 HfS2 HfS2 240 Fe304 Fe304 239 HfS3 HfS3 240 FTI TIF 194 HfSe2 HfSe2 240 GaN GaN 86 HgI2 HgI2 189 GaP GaP 91 HgIn2Te4 HgIn2Te4 224 GaS GaS 190 HgO HgO 186 GaS2TI TlGaS2 193 HgS HgS 187 GaSb GaSb 116 HgS2TI HgTIS2 230 GaSe GaSe 186 HgSe HgSe 187 GaSe2TI TlGaSe2 194 HgSe2TI HgTISe2 231 GaTe GaTe 190 HgTe HgTe 187 GaTe2TI TIGaTe2 194 HgTe2TI HgTITe2 231 Ga2HgsTeg HgSGa2Teg 224 Hg3In2Te6 Hg3In2Te6 224

Ga2HgS4 HgGa2S4 223 Hg3PS3 Hg3PS3 236



Hg3PS4 Hg3PS4 236 La03V LaV03 244

HoMn03 HoMn03 245 La2GeSe5 La2GeSe5 246

HOO3Ti HoTi03 244 La2S3 La2S3 242

HOO3V HOV03 244 La2Se5Sn La2SnSe5 246

H02S3 H02S3 242 La2Te3 La2Te3 242

ISbSe SbSeI 233 LalOOSl4 LalOSl40 242

ISbTe SbTeI 233 Li03V LiV03 244

ISSb SbSI 233 Li3Sb Li3Sb 155

IT1 TIl 195 LU2S4Zn ZnLu2S4 245

I2Pb PbI2 204 MgO MgO 181

I3Sb SbI3 208 MgP2Si MgSiP2 216

InN InN 122 Mg2Pb Mg2Pb 174

InP InP 124 Mg2Si Mg2Si 173

InS InS 191 Mg2Sn Mg2Sn 174

InS2T1 TlInS2 194 Mno.3NbS2 Mno.3NbS2 244

InSb InSb 141 MnO MnO 239

InSe InSe 191 Mn03V MnV03 244

InSe2Tl TlInSe2 194 Mn03Yb YbMn03 245

InTe InTe 191 MnP4 MnP4 241

InTe2Tl TlInTe2 194 MnS MnS 240

In2S3 In2S3 210 MnS4Sb2 MnSb2S4 243

In2S4Zn ZnIn2S4 222 MnSe MnSe 240

In2S5Zn2 Zn2In2S5 224 MnTe MnTe 240

In2S6Zn3 Zn3In2S6 224 Mn203 Mn203 239

In2Se3 In2Se3 210 Mn304 Mn304 239

In2Se4Zn ZnIn2Se4 222 MnllSi]9 MnllSil9 238

In2 Te3 In2Te3 210 Mnl5Sb6 Mn15Si26 238

In2Te4Zn ZnIn2Te4 222 Mn26Si45 Mn26Si45 238

In4Se3 In4Se3 193 MOO4Pb PbMo04 244

In4Te3 In4Te3 193 MOS2 MOS2 240

In6S7 In6S7 192 MoSe2 MoSe2 240

In6Sb5Te In6Sb5Te 230 MoTe2 MoTe2 240

In6Se7 In6Se7 193 NaNb03 NaNb03 244

In7SbTe6 In7SbTe6 232 NaSb NaSb 164

IrP2 IrP2 239 NaSSe2 NaSSe2 229

IrS2 IrS2 241 Na2RbSb Na2RbSb 166

IrS3 IrS3 242 Na3Sb Na3Sb 165

IrSe2 IrSe2 241 NbNio.3S2 Nio·3NbS2 244

IrSe3 IrSe3 241 Nb04Sb SbNb04 244

KNa2Sb Na2KSb 166 Nb203 Nb203 249

KNb03 KNb03 244 Nd03Ti NdTi03 244

K03Ta KTa03 244 Nd03V NdV03 244

KSb KSb 165 Nd2S3 Nd2S3 242

K2RbSb K2RbSb 166 Nd2Se5Sn Nd2SnSe5 246

K3Sb K3 Sb 165 Nil_xS Nil_xS 241

LaMn03 LaMn03 245 NiO NiO 239



NiP2 NiP2 239 P2Rh RhP2 239

NiS2 NiS2 241 P2Ru RUP2 238

OPb PbO 199 P2Si SiP2 197

OPd Pd~ 239 P2SiZn ZnSiP2 216

OSr SrO 181 P2SnZn ZnSnP2 217

OZn ZnO 182 P2Zn ZnP2 178

02Pb Pb02 202 P2Zn3 Zn3P2 176

02Sn Sn02 201 P4Ru RUP4 239

°2Ti Ti02 239 Pb03Ti PbTi03 244

02V V02 239 Pb03Zr PbZr03 244

°3PrV PrV03 244 Pb04W PbW04 244

03Rh2 Rh203 239 PbS PbS 199

03SmTi SmTi03 244 PbS3Sn PbSnS3 203

03SmV SmV03 244 PbS4Sb PbSb2S4 232

°3SrTi SrTi03 244 PbSe PbSe 200

°3TbTi TbTi03 244 PbTe PbTe 200

03TbV TbV03 244 PdS PdS 241

03Ti2 Ti203 239 PdS2 PdS2 241

03TiYb YbTi03 244 PdSe PdSe 241

03TmV TmV03 244 PdSe2 PdSe2 241

03V2 V20 3 239 Pr2SeSSn Pr2SnSeS 246

03VYb YbV03 244 PtO·97S2 PtO.97S2 241

°3W W03 239 PtS PtS 241

OSTa2 Ta20S 239 PtSb2 PtSb2 239

OsTi3 Ti30S 239 PtSe2 PtSe2 241

OSV2 V20 S 239 Rb3Sb Rb3Sb 166

OSV3 V30 S 239 ReS2 ReS2 241

07Ti4 Ti407 239 ReSe2 ReSe2 241

09Tis Tis09 239 ReSi2 ReSi2 238

OllTi6 Ti6011 239 RhS3 RhS3 241

01sTi8 Ti801S 239 RhSe2 RhSe2 241

OSP2 OSP2 239 RhSe3 RhSe3 241

OSP4 OSP4 239 Rh2S3 Rh2S3 241

OsPS OsPS 243 RU2Si3 RU2Si3 238

OsPSe OsPSe 243 RUS2 RUS2 241

OSS2 OSS2 241 RuSb2 RuSb2 238

OSSb2 OSSb2 239 RuSbSe RuSbSe 243

OsSSb OsSbS 243 RuSbTe RuSbTe 243

OsTe2 OsTe2 241 RuSe2 RuSe2 241

P P 161 RuTe2 RuTe2 241

PPdS PdPS 243 S S 162

PPdSe PdPSe 243 SSm SmS 242

PRuS RuPS 243 SSn SnS 198

PSi SiP 196 STI TIS 191

P2Pd PdP2 239 SYb YbS 242

P2Pt PtP2 239 SZn ZnS 182



S2SbTI TISbS2 231 SeSm SmSe 242

S2Sn SnS2 201 SeSn SnSe 198

S2Ta TaS2 240 SeTl TISe 192

S2Tc TCS2 241 SeYb YbSe 242

S2Ti l+x Ti!+xS2 240 SeZn ZnSe 183

S2T1 TlS2 193 Se2Sn SnSe2 202

S2T1Zn ZnTIS2 231 Se2Tc TcSe2 241

S2W WS2 240 Se2Ti l+x Til+xSe2 240

S2Zr ZrS2 240 Se2T1Zn ZnTISe2 231

S3-x Ti TiS3_x 240 Se2W WSe2 240

S3_xZr ZrS3_x 240 Se2Zr!+x Zrl+xSe2 240

S3Sb2 Sb2S3 205 Se3Zr ZrSe3 240

S3Sn2 Sn2S3 202 Se5Sm2Sn Sm2SnSe5 246

S3Yb2 Yb2S3 242 Si Si 11

S4Sm3 Sm3S4 242 Si2Te3 Si2Te3 202

S4TI3V TbVS4 244 SmTe SmTe 242

S4Tm2Zn ZnTm2S4 245 Sn Sn (grey tin) 42

S4Yb2Zn ZnYb2S4 245 SnTe SnTe 199

Sb Sb 161 Te Te 163

SbZn ZnSb 177 TeTl TlTe 192

Sb2Se3 Sb2Se3 206 TeTm TmTe 242

Sb2SnZn ZnSnSb2 218 TeYb YbTe 242

Sb2Te3 Sb2Te3 206 TeZn ZnTe 183

Sb3Zn4 Zn4Sb3 177 Te2T1Zn ZnTlTe2 231

SC2S4Zn ZnSc2S4 245 Te3TI5 TI5Te3 193

Se Se 163

Appendix: 2 Synopsis 307

2 Synopsis of the sections of this book and the corresponding sections of volumes 111117, 22 and 23a of the New Series of Landolt-Bornstein

In this section we list all sections of this book and the corresponding sections of volumes IIIIl7a ... i, III/22a,b and III/23a of the New Series of Landolt-Bornstein for further information about the various groups of semiconductors.

At the end of this section topics of volumes IIIIl7 are listed which have been not included into this volume.

Sections in this volume

1 Elements of the IVth group and IV-IV compounds

1.1 Diamond

1.2 Silicon

1.3 Germanium

1.4 Grey tin

1.5 Silicon carbide

1.6 Silicon germanium alloys

2 III-V compounds

2.1 Boron nitride

2.2 Boron phosphide

2.3 Boron arsenide 2.4 Aluminium nitride

2.5 Aluminium phosphide

Sections in III1l7, III/22 and III/23a

III17a 36 ... 42, 352 ... 358 III/22a 9···13,261···263 III/22b 173 ···206 III/23 a 12··· 15 III 17a 43 ... 87, 359 ... 400 III/22a 14···28,263 ···275 III/22b 207···438 III/23 a 15···20 III17a 87··· 127,400···434 III/22a 28 ... 38, 275 ... 282 III/22b 439···489 III/23 a 20···24 III17a 127··· 132,434···441 III/22a 39 ... 43, 283 ... 286 III/23 a 24···27 III17a 132··· 142,442···449 III/22a 43 ... 50, 286 ... 289 III/22b 490···498 III/23 a 27···30 III17a 142,449···454 III/22a 50··· 51,289···291

III17a 148··· 153,460···464 III/22a 52 ... 55,291 ... 295 III/22b 719 III/23 a 30···34 III 17a 153··· 156,464···467 III/22a 55 ... 57,291 ... 293 III/22b 720 III/23 a 34···35 III17a 156··· 157,468 III 17a 158··· 161,469···472 III/22a 58···60,297 III/23 a 36 III 17a 161···164,473···476 III/22a 60···63,298 III/23 a 37

308 Appendix: 2 Synopsis

2.6 Aluminium arsenide

2.7 Aluminium antimonide

2.8 Gallium nitride

2.9 Gallium phosphide

2.10 Gallium arsenide

2.11 Gallium antimonide

2.12 Indium nitride

2.13 Indium phosphide

2.14 Indium arsenide

2.15 Indium antimonide

2.16 Ternary and quaternary alloys between III-V compounds

3 Elements

3.1 Group III elements 3.2 Group IV elements 3.3 Group V elements 3.4 Group VI elements

4 Binary compounds

4.1 IA-IB compounds 4.2 Ix-Vy compounds

4.2.1 I-V compounds 4.2.2 13-V compounds 4.2.3 I2-I-V compounds

4.3 Ix-VIy compounds 4.4 I-VII compounds

4.5 IIx-IVy compounds 4.5.1 II2-IV compounds 4.5.2 II-IV2 compounds

II117a 164··· 168,476···479 II1/22a 63 ... 67, 299 ... 300 III/23a 38···41 III17a 169···178,479···487 III/22a 67···71,300···303 IIU23a 41···43 IIIl7a 178··· 185,487 ... 494 IIU22a 72 IIl/22b 499···503 IIl17a 185···218,494···511 IIU22a 72 ···82,304···310 IIU22b 504···565 IIU23 a 43···47 IIl17a 218···258,512···545 II1/22a 82···97,310 ... 321 IIU22b 566···658 III/23 a 47···55 III17a 258 ... 278, 546 ... 557 III/22a 97··· 106,321 ···325 III/22b 659···666 II1/23 a 55···59 II117a 278 ... 280, 558 IIU22a 106,326···327 III/23 a 59···60 III17a 281 ···297,559···572 II1/22a 107··· 116,327···335 II1/22b 667···705 II1/23 a 60···65 III 17a 297 ... 310, 572 ... 584 III/22a 117··· 123, 335 ... 338 III/22b 706···709 III/23 a 65···68 III 17a 310···333,584···602 IIl/22a 123 ... 135,338 ... 342 III/22b 710 ... 718 III/23 a 69···74 III17a 333 ... 348, 603 ... 642 III/22a 135··· 159,343···368 III/22b 721 ···749

II1/17e 9···27,263 ···285 see chapter 1 IIU17e 27 ... 63, 285 ... 322 III/17e 63 ... 122,322··· 378

IIU17e 123··· 125,379···381 IIU17e 126 ... 136, 382 ... 394 III/17e 129,382 ... 384 III/17e 129 ... 135, 384 ... 393 III/17e 135, 393 ... 395 III/17e 137··· 163,395 ···432 I1I117b 253 ... 302, 489 ... 527 III/22a 235 ... 260, 440 ... 451 III/17e 163···177,432···455 III/17e 164 ···176,433···455 I1I117e 176

4.6 IIx-Vy compounds 4.6.1 II3-V2 compounds 4.6.2 114-V3 compounds 4.6.3 II-V compounds 3.6.4 II-V2 compounds 3.6.5 II-V4 compounds 3.6.6 Further II-V compounds

4.7 II-VI compounds

4.7.1 IIA-VIB compounds 4.7.2 Zinc chalcogenides

4.7.3 Cadmium chaJcogenides

4.7.4 Mercury chalcogenides

4.8 II-VII2 compounds 4.9 III-V compounds 4.10 IIIx-Vly compounds

4.10.1 III-VI compounds 4.10.2 III2-V13 compounds 4.10.3 Further IIIx-Vly compounds 4.10.4 III-III-VI compounds

4.11 III-VII compounds 4. 12 IV x-V y compounds

4.12.1 IV-V compounds 4.12.2 IV-V2 compounus

4.13 IV x-VIy compounds 4.13.1 IV-VI compounds 4.13.2 IV-VI2 compounds 4.13.3 IV2-VI3 compounds

4.14 IV-VII compounds 4.15 V x-Vly compounds 4.16 V-VII3 compounds

5 Ternary compounds

Appendix: 2 Synopsis

5.1 Tetrahedrally bonded ternary and quasi-binary compounds 5.l.l II12-VI3 compounds 5.1.2 I-III-VI2 compounds 5.1.3 II-IV-V2 compounds 5.1.4 I2-IV-V3 compounds 5.1.5 I2-V-VI4 compounds 5.1.6 II-III2-VI4 compounds 5.1.7 Other ordered vacancy compounds 5.1.8 Quaternary compounds

5.2 Further ternary compounds 5.2.1 Ix-IV y-Viz compounds 5.2.2 Ix-Vy-VIz compounds 5.2.3 IIx-IIIy-VIz compounds 5.2.4 IIIx-V y-VIz compounds 5.2.5 IV x-Vy-VIz compounds 5.2.6 V-VI-VII compounds 5.2.7 Other ternary compounds

IIIIl7e IIIIl7e II11l7e IIIIl7e IIIIl7e IIIIl7e IIIIl7e IIIIl7b III/22a IIIIl7b IIIIl7b III/22a II1/23 a III/l7b III/22a III/23 a IIIIl7b III/22a IIIIl7e

178···249,455···518 183···213,463···499 235···237,517···518 229···235,514···517 213···228,499···512 228···229,513···514 237···238,518 10 ... 252, 319 ... 488 160···234,370···439 13 ... 34, 321 ···335 35···161,335···405 160···192,370···399 74···87 161 ···230,405···459 192 ... 216, 399 ... 415 87··· 103 230 ... 252, 460 ... 488 217···227,415···424 250···262,519···533

see chapter 2 IIIIl7f 9···102,289···339 IIIIl7f 9··· 74,289··· 327 see section 5.l.l IIIIl7f 74 ... 83, 327 ... 329 IIIIl7f 84 ... 102, 330 ... 339 IIIIl7f 103 ... 122, 340 ... 356 IIIIl7f 123 ... 126,356···360 IIIIl7f 123 ... 125,356···360 II11l7f 125 IIIIl7f 126···219,361···473 IIIIl7f 126 ... 190,363 ... 443 IIIIl7f 191···213,444···468 IIIIl7f 214···218,469···473 IIIIl7f 219···234,474···485 IIIIl7f 234 ... 280, 486 ... 559 IIIIl7f 280 ... 288, 559 ... 562

IIIIl7h IIIIl7h III/l7h III/l7h IIIIl7h IIIIl7h IIIIl7h IIIIl7h III/17h III/l7h III/l7h IIIIl7h IIIIl7h III/l7h IIIIl7h IIIIl7h III/l7h

9··· 156.329···381 12 ... 26, 330 ... 338 26 ... 67, 339 ... 352 68 ... Ill, 353 ... 367 111···118,367···370 118···123,370···373 124··· 149,373 ···379 150··· 153,380 153···156,381 292 ... 328, 523 ... 565 292 ... 296, 52~ ... 528 296 ... 304, 528 ... 534 304 ... 306, 534 ... 538 306 ... 309, 538 ... 542 310 ... 313, 542 ... 545 313 ... 325, 545 ... 562 326 ... 328, 562 ... 565

309

310 Appendix: 2 Synopsis

6 Further compounds with semiconducting properties

6.1 Boron compounds 6.2 Binary transition metal compounds

6.2.1 Compounds with elements of the IVth group 6.2.2 Compounds with elements of the Vth group 6.2.3 Oxides 6.2.4 Chaicogenides

6.3 Binary rare earth compounds 6.4 Ternary transition metal compounds

6.4.1 Pnigochalcogenides 6.4.2 Spinels and related compounds 6.4.3 Oxides 6.4.4 Further chaicogenides

6.5 Ternary rare earth compounds

III/17g III/17g III/17g III/17g III/17g III/17g III/17g III/17g III/17h III/17g III/17h III/17h III/17h IIII17h

Topics of volumes III/17 and III/22 not included into the present volume:

Semimagnetic semiconductors Technology of semiconductors

Amorphous semiconductors Organic semiconductors Space charge layers and interfaces Hot electrons Electron hole liquids

IIII17b III/17c III/17d III/17i III/17i III/17i IIII17i III/17i

9···62,345···381 63···344,381 ···666 63 ···79,381 ···397 80··· 116,398···412 129···291,413 ···595 291···316,595···620 317 ... 344, 621 ... 666 117··· 128 157 ... 226, 382 ... 493 117···128 157··· 187,382···435 187···220,435···487 220 ... 225, 488 ... 493 225 ... 291.494··· 522

302···318,528···543 1 ···651 1 ···429 1···105 106···218 219···255 256···296 297···312

Appendix: 3 Contents of Landolt-Bomstein volumes 311

3 Contents of the volumes of the New Series of Landolt-Bornstein dealing with semiconductors

In this appendix some informations are given about the 12 volumes of the New Series of Landolt-Bomstein dealing with semiconductors. The information is restricted to the bibliographical data, the names of the editors and the authors of the volumes and to shortened Lists of Contents containing for each volume the titles of the main chapters and sections and the respective authors.

Volume 111/17: Semiconductors

Editors: O. MADELUNG (a,b,e ... h), M. SCHULZ, H. WEISS (c,d), O. MADELUNG, M. SCHULZ, H. WEISS (i) Subvolume a: 1982. 1316 figs., XI, 642 pages. ISBN 3-540-10610-3 Subvolume b: 1982.891 figs., XI, 543 pages. ISBN 3-540-11308-8 Subvolume c: 1984.738 figs., XIII, 651 pages. ISBN 3-540-11474-2 Subvolume d: 1984. 461 figs., XIV, 429 pages. ISBN 3-540-11779-2 Subvolume e: 1983. 1020 figs., XIII, 533 pages. ISBN 3-540-11780-6 Subvolume f: 1983. 1061 figs., XII, 562 pages. ISBN 3-540-12160-9 Subvolume g: 1984. 1164 figs., XI, 666 pages. ISBN 3-540-12744-5 Subvolume h: 1985.913 figs., XI, 565 pages. ISBN 3-540-13507-3 Subvolume i: 1985. 675 figs., XI, 385 pages. ISBN 3-540-15072-2

Contents

Subvolume a: Physics of Group IV Elements and I1I-V Compounds A Introduction (0. MADELUNG) 1 General remarks on the contents and the structure of subvolumes 17a ... 17e 2 Semiconductor properties, their definition and methods for their determination 3

2.1 Basic properties of semiconductors 3 2.2 Experimental methods useful for the determination of semiconductor properties 8 2.3 Impurities and defects 16 2.4 Properties of tetrahedrally bonded semiconductors 19

3 Frequently used symbols, abbreviations, conversion tables 26 B Physical data of semiconductors I 1 Elements of the IVth group and IV-IV compounds (R. BLACHNIK, M. CARDONA, TH. GRAVE,

G. HARBEKE, K. HUBNER, W. KRESS, O. MADELUNG, W. v. MUNCH, U. ROSSLER, M. SCHULZ, M.S. SKOLNICK) 33

2 III-V compounds (D. BIMBERG, R. BLACHNIK, M. CARDONA, PJ. DEAN, TH. GRAVE, G. HARBEKE, K. HUBNER, U. KAUFMANN, W. KRESS, O. MADELUNG, U. ROSSLER, J. SCHNEIDER) 144

Subvolume b: Physics of II-VI and I-VII Compounds, Semimagnetic Semiconductors A Introduction (0. MADELUNG) B Physical data of semiconductors II 3 II-VI compounds 10

3.0 Structure, chemical bond (I. BROSER, H. FINKENRATH, H.E. GUMLICH, E. MOLLWO, H. NELKOWSKI, G. NIMTZ) 10

3.1 Magnesium oxide (MgO) (H. FINKENRATH, under assistance ofN. UHLE) 13 3.2 Calcium oxide (CaO) (H. FINKENRATH, under assistance ofN. UHLE) 22 3.3 Strontium oxide (SrO) (H. FINKENRATH, under assistance ofN. UHLE) 27 3.4 Barium oxide (BaO) (H. FINKENRATH, under assistance ofN. UHLE) 31 3.5 Zinc oxide (ZnO) (E. MOLLWO) 35 3.6 Zinc sulfide (ZnS) (H. NELKOWSKI, H. 1. SCHULZ, under assistance ofB. DIKO,

K. PETERMANN, H. PRADELLA, G. ROUSSOS, W. SCHLAAK) 61

312 Appendix: 3 Contents of Landolt-Bornstein volumes

3.7 Zinc selenide (ZnSe) (H. E. GUMLICH, D. THEIS, D. TSCHIERSE) 126 3.8 Zinc telluride (ZnTe) (G. NIMTZ) 157 3.9 Cadmium oxide (CdO) (H. FINKENRATH, under assistance ofN. UHLE) 161 3.10 Cadmium sulfide (CdS) (\. BROSER, R. BROSER, M. ROSENZWEIG, under assistance of

R. BAUMERT, A. HOFFMANN, A. ROUSSEL) 166 3.11 Cadmium selenide (CdSe) (I. BROSER, R. BROSER, A. HOFFMANN, under assistance of

R. BAUMERT, M. ROSENZWEIG, A. ROUSSEL) 202 3.12 Cadmium telluride (CdTe) (G. NIMTZ) 225 3.13 Mercury oxide (HgO) (G. NIMTZ) 230 3.14 Mercury sulfide (HgS) (G. NIMTZ) 231 3.15 Mercury selenide (HgSe) (G. NIMTZ) 236 3.16 Mercury telluride (HgTe) (G. NIMTZ) 239 3.17 Solid solutions 244

3.17.1. IIA-VIB compounds (H. FINKENRATH) 244 3.17.2. IIB-VIB compounds (I. BROSER, H. NELKOWSKI, G. NIMTZ) 244

4 I-VII compounds (W. VON DER OSTEN) 253 5 Semimagnetic semiconductors (R.R. GALATZKA, 1. KOSSUT) 302

Subvolume c: Technology of Si, Ge, and SiC A Introduction (M. SCHULZ) 1 General remarks 1 2 Frequently used symbols 2 3 Conversion of units 5 4 Abbreviations frequently used in semiconductor technology 6 B Technology of semiconductors 6 Tetrahedrally bonded semiconductors 12

6.1 Silicon and germanium 12 6.1.1 Technological data (A. MUHLBAUER) 12 6.1.2 Crystal growth 23

6.1.2.1 Deposition of polycrystalline silicon (W. DIETZE) 23 6.1.2.2 Preparation and purification methods of Ge (W. DIETZE) 28 6.1.2.3 Czochralski growth of Si and Ge (W. ZULEHNER) 28 6.1.2.4 Zone melting (A. MUHLBAUER, subsection 6.1.2.4.6 P. GLASOW). 41 6.1.2.5 Unconventional Si crystallization techniques (M. SCHULZ, E. SIRTL) 50 6.1.2.6 Wafer preparation (W. ZULEHNER) 54

6.1.3 Characterization of crystal properties 62 6.1.3.1 Properties of poly crystalline silicon (W. DIETZE) 62 6.1.3.2 Properties ofCzochralski silicon (W. ZULEHNER) 62 6.1.3.3 Properties of float-zone silicon (A. MUHLBAUER) 69 6.1.3.4 Properties of high purity germanium (P. GLASOW) 73 6.1.3.5 Diagnostic techniques (A. MUHLBAUER, subsection 6.1.3.5.3 P. GLASOW) 77

6.1.4 Device technology 90 6.1.4.0 Basic device structures (H. MADER, subsection 6.1.4.0.9, P. GAMOW) 90 6.1.4.1 Diffusion (W. LANGHEINRICH under assistance of K. HABERLE) 118 6.1.4.2 Ion implantation (H. RUNGE) 150 6.1.4.3 Nuclear transmutation doping (M. SCHNOLLER) 185 6.1.4.4 Silicon epitaxy (A. LUDSTECK) 192 6.1.4.5 Fabrication oflayers (subsections 6.1.4.5.0 ... 7: E. DOERING, 6.1.4.5.8 ... 12:

L. SCHLEICHER) 213 6.1.4.6 Litography (H. MADER) 250 6.1.4.7 Etching processes (H. MADER) 280 6.1.4.8 Final device preparation (E. UDEN) 367

6.2 Silicon carbide (W. v. MUNCH) 403

Appendix: 3 Contents of Landolt-Bornstein volumes

Subvolume d: Technology ofIlI-V, II-VI and Non-Tetrahedrally Bonded Compounds A Introduction (M. SCHULZ) B Technology of semiconductors 6 Tetrahedrally bonded semiconductors (continued)

6.3 III-V compounds 6.3.0 Introduction 6.3.1 Technological data (H. JACOB, G. MULLER) 6.3.2 Crystal growth (H. JACOB, G. MULLER) 6.3.3 Characterization of crystal properties (H. JACOB, G. MULLER) 6.3.4 Device technology

6.3.4.0 Basic device structures (c. WEYRICH) 6.3.4.0.1 Light emitting devices (c. WEYRICH) 6.3.4.0.2 Photo detectors (c. WEYRICH, R. TROMMER) 6.3.4.0.3 Solar cells (c. WEYRICH) 6.3.4.0.4 Photocathodes and cold cathodes (c. WEYRICH) 6.3.4.0.5 Microwave devices (c. WEYRICH, lE. MULLER) 6.3.4.0.6 Integrated circuits (c. WEYRICH, lE. MULLER) . 6.3.4.0.7 Magnetic field devices (c. WEYRICH)

6.3.4.1 Diffusion of dopants (c. WEYRICH, C. CLEMEN, P. ECKSTEIN) 6.3.4.2 Ion implantation (H. RUNGE) 6.3.4.3 Epitaxy

6.3.4.3.1 General aspects of epitaxy (C. WEYRICH, M. PLIHAL) 6.3.4.3.2 Lattice matching (C. WEYRICH, M. PLIHAL) 6.3.4.3.3 Vapour phase epitaxy (c. WEYRICH, M. DRUMINSKI, S. GISDAKIS,

K. SCHWARZMICHEL) 6.3.4.3.4 Liquid phase epitaxy (c. WEYRICH, S. LEIBENZEDER, M. PLIHAL) 6.3.4.3.5 Molecular beam epitaxy (c. WEYRICH, F. RAISCH)

6.3.4.4 Etching processes (C. WEYRICH, H. HUBER) 6.3.4.5 Contact fahrication (c. WEYRICH, J. HEINEN)

6.3.4.5.1 Ohmic contacts (c. WEYRICH, J. HEINEN) 6.3.4.5.2 Schottky contacts (c. WEYRICH, H. ALBRECHT)

6.3.4.6 Pattern definition (c. WEYRICH) 6.3.4.7 Final device preparation (c. WEYRICH)

6.4 II-VI compounds (Wide gap semiconductors) (R. HELBIG) 6.5 II-VI compounds (Zero gap and narrow gap semiconductors) (H. MAIER)

7 Non-tetrahedrally bonded semiconductors 7.1 IV-VI compounds (l BAARS) 7.2 Mercury iodide (P. GLASOW, E. TOMZIG) 7.3 Selenium (K. KASSEL)

Subvolume e: Physics or Non-Tetrahedrally Bonded Elements and Binary Compounds I A Introduction (0. MADELUNG) B Physical data of semiconductors III 8 Non-tetrahedrally bonded elements

8.1 Elements of the IIId group: Boron (B) (H. WERHEIT) 8.2 Elements of the Vth group: P, As, Sb, Bi, Bi l-xSbx (H. LEHMANN) 8.3 Elements of the IVth group: S, Se, Te, Sex Te l _x

8.3.0 Structure, chemical bond (P. GROSSE, G. WEISER) 8.3.1 Sulfur (S) (G. WEISER) 8.3.2 Selenium (Se) (G. WEISER) 8.3.3 Tellurium (Te) (P. GROSSE, W. RICHTER) 8.3.4 SeJe l .x (G. WEISER)

9 Non-tetrahedrally bonded binary compounds 9.1 IA-IB compounds (W. FREYLAND) 9.2 Ix-Vy compounds (W. FREYL~ND) 9.3 I-VI compounds (A. GOLZENE, C. SCHWAB)

313

12 12 12 12 34 52 68 68 68 76 78 79 80 83 83 88 92

105 105 106

108 115 121 131 134 135 136 142 142 145 211 245 245 292 308

9 27 63 63 69 86

106 118 123 123 126 137

314 Appendix: 3 Contents of Landolt-Bornstein volumes

9.4 II-IV compounds (0. MADELUNG) 163 9.5 IIx-Vy compounds (W. ZDANOWICZ, sections 9.5.7 and 9.5.9 under assistance of 1 WESZKA,

sections 9.5.14,9.5,15 and 9.5.17 under assistance ofV. YA. SHEVCHENKO) 178 9.6 II-VII2 compounds (G. HARBEKE) 250

Subvolume f: Physics of Non-Tetrahedrally Bonded Binary Compounds II A Introduction (0. MADELUNG) B Physical data of semiconductors IV

9.7 III-VI compounds (K. MASCHKE, F. LEVY) 9 9.8 III-VII compounds (J. TREUSCH) 103 9.9 IVx-Vy compounds (0. MADELUNG) 123 9.10 IVx-VIy compounds 126

9.10.1 IV-VI compounds (G. NIMTZ, FJ. SCHMITTE) 126 9.10.2 IV-VI2 compounds (F. J. SCHMITTE) 191 9.10.3 IV2-VI3 compounds (F. J. SCHMITTE) 214

9.11 IV-VII2 compounds (G. HARBEKE) 219 9.12 Vx-VIy compounds (A. KROST) 234 9.13 V-VII3 compounds (R. CLASEN) 280

Subvolume g: Physics of Non-Tetrahedrally Bonded Binary Compounds III A Introduction (0. MADELUNG) B Physical data of semiconductors V

9.14 Boron compounds (H. WERHEIT) 9 9.15 Binary transition-metal compounds 63

9.15.1 Compounds with elements of the IIId and IVth groups (F. HULLIGER) 63 9.15.2 Binary transition-metal oxides (lB. GOODENOUGH, A. HAMNETT) 129 9.15.3 Binary transition-metal chalcogenides (J.B. GOODENOUGH, S.K. RAMASESHA) 291

9.16 Binary rare earth compounds (G. HUBER, M. LEISS) 317

Subvolume h: Physics of Ternary Compounds A Introduction (0. MADELUNG) B Physical data of semiconductors VI 10 Ternary compounds

10.1 Tetrahedrally bonded ternary and quasi-binary compounds (A. MACKINNON) 9 10.1.0 Introduction, general remarks on structure and properties 9 10.1.1 III2-VI3 compounds 11 10.1.2 I-III-VI2 compounds 26 10. 1.3 II -IV -V 2 compounds 68 1O.1.4I2-IV-VI3compounds 111 10.1.5 I3-V-VI4 compounds 118 10.1.6 vacancy-II-III2-VI4 compounds 124 10.1. 7 Other ordered vacancy compounds 150 10.1.8 Quaternary compounds 153

10.2 Ternary transition-metal compounds (M. BOHM, A. SCHARMANN) 157 10.3 Ternary rare earth compounds (G. HUBER, E.-G. SCHARMER) 226 10.4 Further ternary compounds (0. MADELUNG) 292

Subvolume i: Special Systems and Topics. Comprehensive Index for 111117 a ... i A. Special systems 11 Amorphous semiconductors (W. FUHS)

11.0 Lists offrequently used symbols and abbreviations 1 11.1 Silicon (a-Si) 3 11.2 Germanium (a-Ge) 13 11.3 III-V compounds 20


12 Organic semiconductors (N. KARL) 12.0 Introduction 12.1 Photoconductive wide band gap organic semiconductors 12.2 Dark-conductive narrow band gap organic semiconductors 12.3 Comparative representation of some general properties of selected compounds

Figures for 12 References for 12

B Special topics (edited by M. SCHULZ) 13 Space charge layers at surfaces and interfaces (I. EISELE)

13.0 List of symbols 13. 1 General remarks 13.2 Experimental methods 13.3 Surface data for various semiconductor layers

14 Hot electrons (H. KAHLERT) 14.0 Introduction 14.1 Carrier heating by electronic fields

15 Electron-hole liquids (D. BIMBERG) Comprehensive index for IIIIl7a ... i (0. MADELUNG, M. SCHULZ))

1. Index of substances for subvolumes 17a, b, e ... i (except organic semiconductors) 2. Index of binary and quasi-binary phase diagrams for subvolumes 17a, b, e ... i 3. Index of mineral and common names 4. Index of organic semiconductors (Chap. 12 of subvolume i) 5. Subject index for subvolumes 17c, d

Volume 111/22: Semiconductors (Supplements and extensions to volume III1l7)

Editors: O. MADELUNG (a), M. SCHULZ (b) Subvolume a: 1987.681 figs., XII, 451 pages. ISBN 3-540-16609-2 Subvolume b: 1989.812 figs., XX, 776 pages. ISBN 3-540-17917-8

Contents

315

106 106 112 144 151 159 206

219 219 220 223 223 256 .256 258 .297

314 333 335 335 338

Subvolume a: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds A Introduction (0. MADELUNG) 1 B Physical data I Elements of the IVth group and IV-IV compounds (0. MADELUNG) 9 2 III-V compounds (0. MADELUNG) 52

2.1 ... 2.15 Compunds 52 2.16 Ternary and quaternary alloys between III-V compounds and with other semiconductors 135

2.16.1 Ternary alloys of the type IIIx-IIIl-x-V 135 2.16.2 Ternary alloys of the type III-Vl-x-Vx 148 2.16.3 Quaternary alloys of the type IIIx-IIIl-x-Vy-Vl-y 151 2.16.4 Quaternary alloys of the type IIIl_x_y-IIIx-IlIy-V 156 2.16.5 Alloys ofIII-V compounds with elements of the IVth group 158

3 II-VI compounds (U. ROSSLER) 160 4 I-VII compounds (W. VON DER OSTEN) 235

Subvolume b: Impurities and Defects in Group IV Elements and III-V Compounds 1 Introduction (M. SCHULZ) 2 Trends of impurity and defect properties (P. VOGL)

2.0 Outline of the theoretical chapters 2.1 Introduction 2.2 Theoretical predictions of impurity properties Figures for 2 References for 2

1 12 12 12 14 29 49

316 Appendix: 3 Contents of Landolt-Bomstein volumes

3 Measurement methods 3.1 Electrical methods (G. PENSL) 3.2 Optical methods

3.2.1 Absorption (R. MURRAY, R.C. NEWMAN) 3.2.2 Luminescence (R. SAUER)

3.3 Magnetie resonance methods (1. SCHNEIDER) 3.4 Analysis of extended defeets (W. BERGHOLZ) 3.5 Chemical analysis (H.-J. RATH)

4 Impurity and defect properties in group IV elements 4.1 Diamond (C)

4.1.1 Impurities (W. v. MUNCH) 4.1.2 Defects (W. v. MUNCH) 4.1.3 Paramagnetic centers (C.Al. AMMERLAAN)

4.2 Silicon (Si) 4.2.1 Solubility and segregation of impurities (M. SCHULZ) 4.2.2 Diffusion of impurities (M. SCHULZ) 4.2.3 Impurity levels (M. SCHULZ) 4.2.4 Excited bound states of acceptors and donors (R. SAUER) 4.2.5 Photoluminescence properties of impurities and defects (R. SAUER) 4.2.6 Paramagnetic centers in silicon (C.Al. AMMERLAAN) 4.2.7 Vibrational modes of impurities and defects (R. MURRAY, R.C. NEWMAN) 4.2.8 Oxygen-related defects and microdefects (W. ZULEHNER)

4.3 Germanium (Ge) 4.3.1 Solubility and segregation of impurities (N.A. STOLWIJK) 4.3.2 Diffusion of impurities (N.A. STOL WIJK) 4.3.3 Impurity levels (M.S. SKOLNICK) 4.3.4 Capture cross sections (M.S. SKOLNICK) 4.3.5 Photoionization cross sections (M.S. SKOLNICK) 4.3.6 Deformation potential (M.S. SKOLNICK) 4.3.7 Luminescence of bound excitions (M.S. SKOLNICK) 4.3.8 Electron paramagnetic resonance (EPR) (M.S. SKOLNICK) 4.3.9 Local vibrational modes (M.S. SKOLNICK)

4.4 Silicon carbide (SiC) (W. V. MUNCH) 5 Impurity and defect properties in group III-V compounds

5.1 Gallium nitride (GaN) 5.1.1 Shallow impurities (after D. BIMBERG, Vol. III/17a) 5.1.2 Deep defect states (AR. PEAKER)

5.2 Gallium phosphide (GaP) 5.2.1 Solubility and diffusion of impurities (AF.W. WILLOUGHBY) 5.2.2 Vibrational modes of impurities and defects (R. MURRAY, R.c. NEWMAN) 5.2.3 Shallow impurities (after P.J. DEAN, Volume III/17a) 5.2.4 Deep defects 5.2.5 Transition metal impurities (B. CLERlAUD) 5.2.6 Rare earth impurities (H. ENNEN)

5.3 Gallium arsenide (GaAs) 5.3.1 Solubility of impurities (AF. W. WILLOUGHBY) 5.3.2 Diffusion of impurities and defects (AF.W. WILLOUGHBY) 5.3.3 Vibrational modes of impurities and defects (R. MURRAY, R.C. NEWMAN) 5.3.4 Shallow impurities and defects (B. HAMILTON) 5.3.5 Deep defects

5.3.5.1 Defect levels (AR. PEAKER) 5.3.5.2 Optical properties of deep defects (U. KAUFMANN) 5.3.5.3 ESR, ENDOR, and ODMR data (1. SCHNEIDER)

5.3.6 Transition metal impurities (B. CLERJAUD) 5.3.7 Rare earth impurities (H. ENNEN)

51 51

105 105 118 123 126 159 173 173 173 174 177 207 207 230 270 325 338 365 382 391 439 439 451 466 476 477 477 478 479 479 490 499 499 499 502 504 504 505 510 525 537 561 566 566 568 576 583 594 594 603 620 627 654


5.4 Gallium antimonide (GaS b) 5.4.1 Diffusion of impurities and defects (A.F.W. WILLOUGHBY) 5.4.2 Vibrational modes of impurities (R. MURRAY, R.C. NEWMAN) 5.4.3 Shallow impurities and defects (after D. BIMBERG, Vol. III117a) 5.4.4 Deep defects (A.R. PEAKER)

5.5 Indium phosphide (InP) 5.5.1 Diffusion of impurities and defects (A.F.W. WILLOUGHBY) 5.5.2 Vibrational modes of impurities (R. MURRAY, R.C. NEWMAN) 5.5.3 Shallow impurities and defects (B. HAMILTON) 5.5.4 Deep impurities

5.5.4.1 Deep defect states (H. GRIMMEISS) 5.5.4.2 Photoluminescence (U. KAUFMANN) 5.5.4.3 ESR and ODMR data (1. SCHNEIDFR)

5.5.5 Transition metal impurities (B. CLERJAUD) 5.5.6 Rare earth impurities (H. ENNEN)

5.6 Indium arsenide (InAs) 5.6.1 Solubility of impurities (A.F.W. WILLOUGHBY) 5.6.2 Diffusion of impurities and defects (A.F.W. WILLOUGHBY) 5.6.3 Vibrational modes of impurities (R. MURRAY, R.C. NEWMAN) 5.6.4 Shallow impurities (after D. BIMBFRG, VOL III117a) 5.6.5 Deep defect states (H. GRIMMEISS) 5.6.6 Transition metal impurities (B. CLERJAUD)

5.7 Indium antimonide (InSb) 5.7.1 Diffusion of impurities and defects (A.F.W. WILLOUGHBY) 5.7.2 Vibrational modes of impurities and defects (R. MURRAY, R.C. NEWMAN) 5.7.3 Shallow impurities (after D. BIMBERG, Vol. III117a) 5.7.4 Deep impurities (H. GRIMMEISS) 5.7.5 Transition metal impurities (B. CLERJAUD)

5.8 Boron nitride (BN) 5.8.1 Deep defect states (H. GRIMMEISS)

5.9 Boron phosphide (BP) 5.9.1 Deep defect states (H. GRIMMEISS)

6 Impurity and defect properties in ternary compounds 6.1 Gallium arsenide phosphide (GaAsl-xPx)

6.1.1 Solubility and diffusion of impurities (A.F.W. WILLOUGHBY) 6.1.2 Deep defect states (H. GRIMMEISS) 6.1.3 Transition metal impurities (B. CLERJAUD)

6.2 Gallium arsenide antimonide (GaAsl_xSbx) 6.2.1 Deep defect states (H. GRIMMEISS)

6.3 Indium arsenide phosphide (InAsl-xPx) 6.3.1 Solubility and diffusion of impurities (A.F.W. WILLOUGHBY) 6.3.2 Optical and electronic properties (B. CLERJAUD)

6.4 Gallium aluminum arsenide (Gal_xAlxAs) 6.4.1 Solubility and diffusion of impurities (A.F. W. WILLOUGHBY) 6.4.2 Defect levels (A.R. PEAKER) 6.4.3 Transition metal impurities (B. CLERJAUD)

6.5 Gallium aluminum antimonide (Gal_xAlxSb) 6.5.1 Deep defect states (A.R. PEAKER)

6.6 Gallium indium arsenide (Gal_xInxAs) 6.6.1 Solubility and diffusion of impurities (A.F.W. WILLOUGHBY) 6.6.2 Defect levels (B. CLERJAUD) 6.6.3 Optical properties (B. CLERJAUD)

6.7 Gallium indium phosphide (GaxInl_xP) (B. CLERJAUD) 7 Impurity and defect properties of quaternary compounds

7.1 Gallium indium arsenide phosphide(GaxIn l-xAsyPl-y) 7.1.1 Energy levels (B. CLERJAUD) 7.1.2 Optical properties (B. CLERJAUD)

8 Subject index

317

659 659 661 662 665 667 667 669 670 677 677 681 683 685 698 706 706 706 708 708 709 709 710 710 713 713 717 718 719 719 720 720 721 721 721 723 729 731 731 733 733 734 735 735 736 742 744 744 744 744 746 746 747 749 749 749 749 750

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rate policies consistently reflect this conviction.

We also expect our busi

ness partners - paper mills, printers, packag

ing manufacturers, etc. - to commit themselves

to using environmentally friendly materials and

production processes.

The paper in this book is made from

low- or no-chlorine pulp and is acid free, in

conformance with international standards for

paper permanency.

appendix 1 index of substances - home - springer978-3-642-97675...appendix: 1 index of substances...

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