ap2602 p1.0 2012.2 - diodes incorporated · supply voltage v cc-0.3 to 6 v otxy voltage vot-0.3 to...

Preliminary Datasheet

Octave Remote Resistor-programmable Temperature Switches AP2602

Feb. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

1

General Description The AP2602 are fully integrated, resistor programmable octave remote temperature switches with selectable external/internal trigger voltages setting. The thresholds are set by external resistors and thermistors with negative temperature coefficient. The AP2602 provides 4 open-drain, active low, over-temperature outputs for each 2 sensors. These switches operate with a 2.7V to 5.5V single supply. The AP2602 are available in 16-pin QFN-3X3-16 package.

Features • 8 Remote Temperature Switches Set by

Thermistor and External Resistors • 4 Open-drain Active Low Output Stages for

Each 2 Temperature Switches • Selectable External/Internal Trigger Voltages

Setting • Built-in Hysteresis Temperature when Using

Internal Setting Trigger Voltage • Guaranteed Output Signal Valid to VCC=0.8V • QFN-3X3-16 Package Applications • µP Temperature Monitoring High-speed

Computers • Temperature Control • Temperature Alarms • Fan Control • Automotives

Figure 1. Package Type of AP2602

QFN-3X3-16




2

Pin Configuration

FN Package (QFN-3X3-16)

Note 1: Recommend connecting the thermal pad to GND for excellent power dissipation.

Figure 2. Pin Configuration of AP2602 (Top View)

Pin Description

Pin Number

Pin Name Function

1 VTRIG Input of external setting trigger voltage 2 VCC Power-supply input 3 GND Ground

4 SEL Connect SEL to GND to select external trigger voltage, while connecting SEL to VCC to select internal trigger voltage. Don’t leave the pin floating

5,7,8,10, 11,13,14,16 TMSNSX Connect an external 1% resistor from TMSNSX to GND to set trigger point

of remote temperature sensorX

6,9,12,15 OTXY__________

Open-Drain, active low, over-temperature output for sensor 1, 2, sensor 3, 4, sensor 5, 6, sensor 7, 8 respectively. The OTXY

__________

outputs are the wire-or results of sensorX and sensorY

E P

5 6 7 8

13141516

1

2

3

4 9

10

11

12

Pin 1 Mark

VTRIG

VCC

GND

SEL

OT5

6

TMSN

S6

TMSN

S7

OT12

TMS

NS

3TMSNS1

TMS

NS

4

TMSNS8TM

SN

S2

OT78

TMS

NS

5

OT3

4




3

Functional Block Diagram

Figure 3. Functional Block Diagram of AP2602

CMP

CMP with Hysteresis

Deglitch Logic

CMP

CMP with Hysteresis

Deglitch Logic

SEL VCC

TMSNS1

TMSNS2

VREF

VREF

GND

OT78

VTRIG

TMSNS8

OT12

1 4 2

11

131416578

10&

12

15

6

&

9

3




4

Ordering Information

AP2602 -

Circuit Type G1: Green Package TR: Tape & Reel FN: QFN-3X3-16

Package Temperature Range Part Number Marking ID Packing

Type QFN-3X3-16 -40 to 125°C AP2602FNTR-G1 B2E Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Absolute Maximum Ratings (Note 2) Parameter Symbol Value Unit

Supply Voltage VCC -0.3 to 6 V

OTXY Voltage VOT -0.3 to 6 V

TMSNSX, VTRIG Voltage VTMSNSX, VTRIG -0.3 to VCC+0.3 V

SEL Voltage VSEL -0.3 to 6 V

Output Current (All Pins) 20 mA

Input Current (All Pins) 20 mA

Operating Junction Temperature TJ 150 °C

Storage Temperature Range TSTG -65 to 150 °C Lead Temperature (Soldering, 10 seconds) TLEAD 260 °C

Thermal Resistance θJA QFN-3X3-16 68 °C/W

ESD (Machine Model) 200 V

ESD (Human Body Model) 2000 V Note 2: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.




5

Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VCC 2.7 5.5 V Operating Ambient Temperature Range TA -40 125 °C

Electrical Characteristics VCC=2.7V to 5.5V, TA =-40°C to 125°C, unless otherwise specified. Typical values are at TA=25°C. Parameter Symbol Conditions Min Typ Max UnitsSupply Voltage VCC 2.7 5.5 V

VTMSNSX=VCC 40 100 Supply Current ICC

VCC=3.3V OTXY__________

float VTMSNSX=GND 55 110 µA

VCC=5V, VSEL=VCC, VTH/VCC 0.244 0.25 0.256 TMSNSX Input Threshold VTH/VCC

VCC=3.3V, VSEL=VCC, VTH/VCC 0.24 0.25 0.26 V/V

VTRIG Input Range VTRIG 0<VTRIG<0.4×VCC 0.5 0.4× VCC V

Offset Voltage between VTRIG and TMSNSX

VOS VCC=5V, VSEL=GND -15 15 mV

VIH VCC=5V 2 V SEL Input Voltage

VIL VCC=5V 1 V

Open-drain OTXY__________

Output Sink Current ISINK VOT=0.3V, VTMSNSX=0V 3 4.5 mA

Open-drain OTXY__________

Output Leakage Current

ILEAK-OT VOT=VCC, VTMSNSX=5V 1 µA

Thermal Resistance θJC QFN-3X3-16 4.2 °C/W




6

Typical Performance Characteristics

Figure 4. Supply Current vs. Case Temperature Figure 5. Supply Current vs. Case Temperature

Figure 6. Supply Current vs. Supply Voltage Figure 7. Supply Current vs. Supply Voltage

-50 -25 0 25 50 75 100 125 1500

10

20

30

40

50

60

70

Sup

ply

Cur

rent

(µA)

Case Temperature (oC)

VCC

=3.3VVSEL=VCC

VTMSNSX

=3.3V VTMSNSX=0V

-50 -25 0 25 50 75 100 125 1500

10

20

30

40

50

60

70

VCC=3.3VVSEL=GND,VTRIG=1V

VTMSNSX

=3.3V VTMSNSX=0V

Sup

ply

Cur

rent

(µA)


2.5 3.0 3.5 4.0 4.5 5.0 5.50

10

20

30

40

50

60

70

Sup

ply

Cur

rent

(µA

)

Supply Voltage (V)

VSEL=VCCVTMSNSX=3.3V

TC=-40oC TC=25oC T

C=150oC

2.5 3.0 3.5 4.0 4.5 5.0 5.50

10

20

30

40

50

60

70

VSEL

=GNDVTMSNSX=0V

TC=-40oC

TC=25oC

TC=150oC

Sup

ply

Cur

rent

(µA

)

Supply Voltage (V)




7

Typical Performance Characteristics (Continued)

Figure 8. TMSNSX Input Threshold (VTH/VCC) Figure 9. Offset Voltage between VTRIG and TMSNSX vs. Case Temperature vs. Case Temperature

VTMSNS1 2V/div

VTMSNS2 2V/div VOT12 2V/div Time (10µs/div)

Figure 10. Open-drain OTXY__________

Output Sink Current Figure 11. Deglitch time to OT High (VSEL=VCC)

vs. OTXY__________

Voltage (Conditions: VCC=5V, VTMSNS1=0.5V to 3V, VTMSNS2=2.5V)

-50 -25 0 25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

2.5

3.0

Offs

et V

olta

ge b

etw

een

VTR

IG a

nd T

MSN

SX

(mV

)


VSEL=GNDVTRIG=1V

VCC=3.3V V

CC=5V

0 1 2 3 4 50

5

10

15

20

25

30

VCC=5VV

SEL=V

CCVTMSNSX=0V

TC=-40oC TC=25oC T

C=150oC

OTX

Y S

ink

Cur

rent

(mA

)

OTXY Voltage (V)

-50 -25 0 25 50 75 100 125 1500.245

0.246

0.247

0.248

0.249

0.250

0.251

0.252

TMS

NS

X In

put T

hres

hold

(VTH

/VC

C)


VSEL=VCC VCC=3.3V V

CC=5V




8

Typical Performance Characteristics (Continued) VTMSNS1 VTMSNS1

2V/div 2V/div VTMSNS2 VTMSNS2 2V/div 2V/div

VOT12 VOT12

2V/div 2V/div

Time (50µs/div) Time (10µs/div)

Figure 12. Deglitch time to OT Low (VSEL=VCC) Figure 13. Deglitch time to OT High (VSEL=GND) (Conditions: VCC=5V, VTMSNS1=0.5V to 3V, (Conditions: VCC=5V, VTMSNS1=0.5V to 3V,

VTMSNS2=2.5V) VTMSNS2=2.5V, VTRIG=1V)

VTMSNS1 2V/div

VTMSNS2 2V/div

VOT12 2V/div

Time (50µs/div)

Figure 14. Deglitch Time to OT Low (VSEL=GND) (Conditions: VCC =5V, VTMSNS1=0.5V to 3V,

VTMSNS2=2.5V, VTRIG=1V)




9

Typical Application Mode A

Figure 15. Typical Application of AP2602 (Mode A)




10

Typical Application (Continued) Mode B

VCC

TMSNS1

TMSNS2

TMSNS8

VTRIG

SELGND

OT12

OT34

OT78

OT56

VCC

GND

µPAP2602

100k 100k 100k 100k

RSET8 RSET1RSET2

Thermistor

2

11

13

10

4

3

9

6

15

12

1

Figure 16. Typical Application of AP2602 (Mode B)




11

Mechanical Dimensions QFN-3×3-16 Unit: mm(inch)

3.10

0(0 .

122)

2.90

0(0 .

114)

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Limited800, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing LimitedMAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen OfficeAdvanced Analog Circuits (Shanghai) Corporation Shenzhen OfficeRoom E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corporation30920 Huntwood Ave. Hayward,CA 94544, U.S.ATel : +1-510-324-2988Fax: +1-510-324-2788

- IC Design GroupAdvanced Analog Circuits (Shanghai) Corporation8F, Zone B, 900, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.

- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.800 Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen OfficeUnit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,China Tel: +86-755-8826 7951Fax: +86-755-8826 7865

Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806

USA OfficeBCD Semiconductor Corp.30920 Huntwood Ave. Hayward,CA 94544, USATel : +1-510-324-2988Fax: +1-510-324-2788

- HeadquartersBCD Semiconductor Manufacturing LimitedNo. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, ChinaTel: +86-21-24162266, Fax: +86-21-24162277

ap2602 p1.0 2012.2 - diodes incorporated · supply voltage v cc-0.3 to 6 v otxy voltage vot-0.3 to...

Documents