“LAB FAB for smart sensors and actuators MEMS”

Lab4MEMS

Marius Enăchescu

- a success story -

KETs Pilot Lines:

Challenges & Opportunities(KETs = Key Enable Technologies)

• KETs is more “SME friendly” instrument

• closer to real supply chain, products and market

• Pilot Lines are vehicles to exploit industrial policy

nation and EU wise.

1) micro- and nanoelectronics

2) advanced materials

3) industrial biotechnology

4) photonics

5) nanotechnology

6) advanced manufacturing systems

KETs identified by EU:

Why public funding to KETs Manufacturing?

• The public money helps to speed up the investment plan and to

compensate the risk of “market slip”. In addition, partnering with

EU’s top notch RTOs and SMEs give a competitive edge:

• Public Funding allows to:

• Alleviate the financial burden

• Motivate the company to invest on high-tech manufacturing

Issues are:

1. Non homogeneous and sometimes colliding industrial policies among MS’s. This translates into a plethora of national procedures and contracts to sort out: This overhead is fully in charge of the coordinator!

2. Largely inadequate level of public funding to sustain the capex investment on Manufacturing!

3. Need to avoid wasting of national budget when sorting out the projects rank out of the Call.

Lab4MEMS

First KETs Pilot Line in Europe !

Introduction to MEMS

Micro-ElectroMechanical Systems

What are their dimensions?

~10 MEMS devices per mm2

What are we talking about?

Linear Rack Gear Reduction Drive

Triple-Piston Microsteam Engine

Photos from Sandia National Lab. Website: http://mems.sandia.gov

MEMS examples

MEMS examples

Components of MEMS

MEMS examples

Micro-Motor and Micro-Mirror

Electrostatic Micro Motor fabricated from Si (Texas

Instruments)

Micro Mirror (Lucent

Technologies)

MEMS examples

KET Pilot Lines at

STMicroelectronics, Italy

Coordinator:

Roberto Zafalon

EU Technology Programs, Director

R&D and Public Affairs

STMicroelectronics Italy

ENIAC/KETs Pilot Lines: STMicroelectronics Italy

• Lab4MEMS: LAB FAB for smart sensors and actuators MEMS

• ENIAC Call 2012. Start date: 1 Jan 2013

• 30-month project; 19 partners from 10 Countries;

• 28 Meur Cost Budget

• Lab4MEMS-II: Micro-Optical MEMS, micro-mirrors and pico-projectors

• ENIAC Call 2013. Start date: 1 Nov 2014

• 36-month project; 21 partners from 9 Countries;

• 30 Meur Cost Budget

- Only 6 partners chosen for Lab4MEMS-II -

Lab4MEMS: Scope & Mission

• Lab4MEMS will push forward innovative technologies on advanced

piezoelectric and magnetic materials, including advanced packaging,

expected to fuel the next generation’s MEMS:

• Micro-actuators, micro-pumps, sensors and electrical power generators,

integrated on silicon-based piezoelectric materials (PZT)

• Data Storage, Ink Jet, Health Care, Automotive and Energy Scavenging

• Magnetic field sensors integrated on silicon-based Anisotropic Magneto

Resistance (AMR) materials.

• Consumer applications, such as GPS navigation and mobile phones

• Advanced packaging technologies and vertical interconnections (flip chip,

Through Silicon Vias or Through Mold Vias) for full 3D integration.

• For Consumer and Healthcare, such as body area and remote monitoring

ST assets: 900+ patents related to MEMS; more than 5 billion MEMS devices shipped so far; extensive production capabilities currently producing more than

3 million MEMS devices per day.

Lab4MEMS’s vision : key-enabling technologies

and new application areas

• Lab4MEMS aims at introducing new classes of (non-CMOS) materials into

the pilot line for innovative MEMS production

• The project will leverage on piezoelectric PZT thin-film and materials

featuring Anisotropic Magneto Resistance (AMR) such as permalloy (an

alloy of NiFe with very low coercivity and a good sensitivity).

• Such materials will enable a variety of

new key functionalities for

next generation MEMS devices

• Lab4MEMS goes cross KETs.

1. Micro-nanoelectronics

2. Advanced materials

3. Advanced Manufacturing

-

Established

MEMS

technology

Application

areas

Sensing:

Mech.: Accelerometer,

gyro, pressure, flow, tactile

Therm.: flow, temperature

Actuation:

Fluid.: Ink-jet, micropumps

Acoustic: ultrasound trans.

Optics: tunable filters, lenses

RF: Switches

Piezoelectric

thin-films

(PZT)

+Sensing & Energy

harvesting:

Low noise, low power

sensors: microphones,

accelerometers

Vibration energy

harvesters

Anisotropic

magneto resistive

materials

(permalloy)

+

Sensing:

Magnetic field: electronic

compass

3D

heterogenous

packaging

+ System aspects:

Miniaturisation, compact

elements

New functionalities

Wireless sensor nodes

Lab4MEMS: Expected Impact

•The MEMS PL is based in Agrate (IT), on 200 mm wafer.

Once in operation, it will process >600 wafers/week. • ST-I fits a new set of R&D equipment for PZT and AMR, as part of a larger

manufacturing facility already in place for high volume (i.e. >100M devices/month) 3-axis MEMS accelerometers and gyroscope.

• This strategy will increasing the know-how on very strategic enabling technologies, combining scientific skills with the ability to design and manufacture a wide range of smart systems on silicon.

• The Packaging PL is based in Kirkop (Malta)• ST-M integrates a new set of R&D equipment for flip chip, vertical

interconnections (Through Silicon Vias and/or Through Mold Vias) and Wafer Level Package, as part of a larger back-end manufacturing facility for high volume MEMS products.

Lab4MEMS: two-fold Demonstration strategy

1. Proof-of-concept : A suite of intermediate demonstration vehicles

delivered and assessed at midterm, to prove the actual feasibility of

initial device solutions, wafer substrates, process steps, tools or

equipment.

2. Final Technology Demonstrators : From the "proof-of-concept",

the work-flow will then converge and optimize a set of four Tech

Demonstrators intended to become the main flagship vehicles to

demonstrate the KET Pilot Lines.

Lab4MEMS Final Technology Demonstrators:

a. Print-head for industrial printers, piezo actuated

b. Micro-electric scavenger, by mechanical/vibration energy

c. AMR magnetic sensor

d. 3D MEMS packaging

Proof-of-concept designs

1. ENERGY HARVESTERS

2. ULTRASOUND TRANSDUCERS

3. MAGNETOMETERS

4. PRINT-HEADS

5. RF MEMS

6. TEST STRUCTURES

IDLE = Cfree

250nm

250nm

250nm

Example of Technology demonstrator

New Advanced 9-Axis Motion/Position

Sensor allows Smaller, Smarter

Electronics

• Enhanced performance and ultra low-power demand, in a 3.5x3 mm2, which

is almost 35% smaller than previous generation.

• Adds new features to gesture controls, indoor navigation, augmented reality.

• Small size and battery efficiency, achieved by using low-noise sensor

technology, will drastically enhance the usability and comfort of wearable

devices.

First Pilot Line in Europe, based on KETs vision!

Pilot Line implemented at STMicroelectronics-Italy

- a success story -

Equipment and process setup; UPB

ENIAC 2012-2 – 325622: Lab4MEMS “LAB FAB for smart sensors and actuators MEMS"

AMR stack characterization performed by electron microscopy, XRD and AFM on

ST-I specimens.

Room temperature micro-Raman measurements were performed on PZT

specimen wafers provided by ST-I, verifying typical Raman features as reported in

literature and providing a representative map of the characteristic PZT peak

Raman shift distribution all along the cut piece of wafer according to a

correspondent stress distribution.

Moreover pull-out technique was applied to PZT thin films for adhesion study vs.

different process conditions, helping in determine center to edge asymmetry

properties of the layer.

Full characterization of MEMS’ wafers. Results were reported in WP1, WP2, WP4

Those studies contribute to ST-I process characterization and baseline as starting

reference.

FATIGUE TESTER FOR MEMS – designed and implemented at UPB!!!!

Location of the selected samples analyzed by AFM/SPFM

a)

Topography AFM images from different

wafer locations: a) edge; b) ¼-middle; c)

½-center

b)

c)

Edge ¼ 1/2

RMS Roughness on a 1mm2

area [nm] 0.64 0.680 0.69

Peak to valley on a 1mm2

area [nm] 4.3 5.0 5.7

Average Lateral Grain Size

[nm] 16.8 12.6 8

TABELUL 3

MEMS Wafers & Substrate RoughnessAdvanced AFM and SPFM Analysis

Confidential Matter

Scan size Edge Center

RMS

[pm]

Ra [pm] RMS

[pm]

Ra [pm]

1µm x1µm 80.6 63.9 77.3 61.6

500nmx500nm 84.7 67.0 79.0 62.7

250nmx250nm 75.6 59.9 67.3 53.5

TIP RADIUS MEASURED 6 nm

BEFORE AFTER

RA & RMS roughness with pm resolution by AFM

Wafers & Substrate Roughness

Confidential Matter

Each wafer’s quart has been divided into 78 samples on which Raman

measurements were performed.

PZT wafers obtained by chemical solution deposition technique

MEMS Wafers & Substrate Stress/StrainAdvanced micro-Raman Analysis

Confidential Matter

Characteristic room temperature

Raman features for a PZT compound

are observed on all recorded spectra:

199.5 cm-1 associated to mode

E(2TO)

271 cm-1 associated to B1 + E silent

582 cm-1 associated to A1(3TO)

738 cm-1 associated to Rh E(4TO)

(PZT tetragonal and rhombohedral

phases )

Ref: H. Zhang, A. UuSimaki, S. Leppavuuori, P. Karjalainen;

J.Appl.Phys. 76 (1994) 4294

Room temperature micro-Raman measurements

An obvious distribution characteristic for a stress distribution. The highest stress is observed on sample

indexed as P1, followed by sample P3 and P4. A quasi-uniform stress distribution is observed on samples P2

and P5.

Representative map of the characteristic PZT

peak Raman shift distribution all along the cut samples

Sample P1: 1312 YCH 22A4 P2: 1312 YCL 09C0 P3: 1405 YCK LM18 P4: 1405 YCK LM24 P5: 1405 YCK LM25

Position 1 3 5 1 3 5 1 3 5 1 3 5 1 3 5

Pull-out

(MPa)54.6 49 39.2 55.3 48.3 61.6 45.5 58.1 42 35 63 42.7 52.5 43.4 55.3

A distribution of the thin film adhesion along the substrate could observed for all

analyzed samples:

- Sample P1: lowest adhesion at the wafer edge and highest adhesion on its middle;

- Sample P2 & P5: lowest adhesion at the wafer middle and highest adhesion on its

middle and edge;

- Sample P3 & P4: a Gaussian distribution type of the adhesion with the highest value

on the wafer’s middle.

Test procedure according to ASTMD4541-09e1 regulation.

Equipment: DFD Instruments PATMICRO AT101

SiPtPZT

Sample index:

P1: 1312 YCH 22A4

P2: 1312 YCL 09C0

P3: 1405 YCK LM18

P4: 1405 YCK LM24

P5: 1405 YCK LM25

Adhesion tests by Pull-out technique

Signal of 16kHzSignal of 103kHz

FATIGUE TESTER FOR MEMS

for STMicroelectronics use

designed and implemented at UPB!!!!

Project closed on December 31st 2015

Final Review 8-10 of March 2016, in Malta

Dear partners, 3/14/2016 1:09 PM

After the “Excellent” score we got from the final review in Malta, there is very little to say rather

than: we outperformed! We are the best” :-)

Let me share with all of you the few pictures taken during the project review. This is a shared

folder out of google photo: each of you can

upload his/her photos to share among all the participants.

https://goo.gl/photos/5uhvdyh47DXb5HtB8

Best regards, Roberto

Lab4MEMS

Final Review 8-10 of March 2016, in Malta

STM-Italy #1 STM-Italy #2

STM-Malta #1

Rome, November 28, 2016 – The Electronic Components and Systems for European Leadership (ECSEL)

Joint Undertaking announced the Lab4MEMS project as the winner of its

2016 Innovation Award during the European Nanoelectronics Forum, in Rome, Italy.

Lab4MEMS Project Recognized With

Very Important European Innovation Award

“The ECSEL Innovation Award highlights the excellent results the Lab4MEMS team achieved through the project’s execution and

the high impact of its successes. In particular, Lab4MEMS developed innovative MEMS solutions with advanced piezoelectric and

magnetic materials, including advanced 3D Packaging technologies.”

All of these successes contributed to the Lab4MEMS project and are available to benefit the contributors.

These participants were Politecnico di Torino (Italy); Fondazione Istituto Italiano di Tecnologia (Italy);

Politecnico di Milano (Italy); Consorzio Nazionale Interuniversitario per la Nanoelettronica (Italy);

Commissariat à l'Energie Atomique et aux énergies alternatives (France); SERMA Technologies SA (France);

STMicroelectronics Ltd. (Malta); Universita ta Malta (Malta); Solmates BV (Netherlands);

Cavendish Kinetics BV (Netherlands); Okmetic OYJ (Finland); VTT (Finland); Picosun OY (Finland);

KLA-Tencor ICOS (Belgium); Universitatea Politehnica din Bucuresti (Romania);

Instytut Technologii Elektronowej (Poland); Stiftelsen SINTEF (Norway); Sonitor Technologies AS (Norway);

BESI GmbH (Austria).

This was UPB-CSSNT success story,

part of an European success story

UPB-CSSNT success story continues ………..

LAB4MEMS

LAB4MEMS-II

THINGS2DO

R3POWERUP

REACTION

MADEin4

OCEAN12

PIN3S

Thank You for being invited & Thank You for Your Attention!!!

Prof. Dr.rer.nat. Marius Enăchescu; marius.enachescu@upb.ro

Director General

Centrul pentru Știința Suprafeței și Nanotehnologie

Universitatea Politehnica din București

KETs: Building Value in Europe!