ANODIC BONDING – WAYS OF SURFACE CLEANING

Investigating different ways to clean the wafer surfaces for the anodic bonding process:

1. Piranha bath ( H2SO4 + H2O2)2. Oxygen plasma 3. Piranha bath + Oxygen plasma4. CMP + RCA5. RCA (NH4OH HF HCl)

Pyrex #

Silicon #

525 µm

380 µm

350°C 1h

Ibonding

1000 V

10 minGently cooling

10% Ibonding

216/01/2012

ANODIC BONDING – WAYS OF SURFACE CLEANING

Cleaning only with Piaranha

350°C 1h

20 mA

1000 V

10 minGently cooling

1.27 mA

316/01/2012

ANODIC BONDING – WAYS OF SURFACE CLEANING

Cleaning only with Oxygen plasma

350°C 1h

3.8 mA

1000 V

40 minGently cooling

0.38 mA

416/01/2012

ANODIC BONDING – WAYS OF SURFACE CLEANING

Cleaning with Oxygen plasma + Piranha

350°C 1h

10 mA

1000 V

10 minGently cooling

0.93 mA

516/01/2012

ANODIC BONDING – WAYS OF SURFACE CLEANING

Pyrex #

Silicon # 33297Cleaning with CMP + RCA

1000 V350°CMax 8.5 mA 0.85 mA in 15 min

616/01/2012

ANODIC BONDING – WAYS OF SURFACE CLEANING

Pyrex #

Silicon # 22095Cleaning with RCA

350°C 1.45 h

14 mA

1000 V

12 minGently cooling

0.89 mA

716/01/2012

ANODIC BONDING – Direct bonding

Pyrex #

Silicon # 3644 Cleaning with Piranha

Wafer for LHCb

1000 V350°CMax 6.2 mA 0.7 mA in 15 min