annual report 2009 - naist · this lab is quite new, opening in april, 2009. in our lab, we study...
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Annual Report 2009 INFORMATION DEVICE SICENCE LABORATORY Graduate School of Materials Science
Nara Institute of Science and Technology
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Preface This lab is quite new, opening in April, 2009. In our lab, we study next generation devices such as displays or new functional LSIs. We fabricate new semiconductor devices based on Si by introducing new materials such as inorganic, organic, and bio-molecular films. Our motto is "to fabricate the world first device by our hands". Obtained results are reported throughout the world. Prof. Yukiharu Uraoka 当研究室は，2009 年から始まった新しい研究室です．研究領域は，ディスプレイや超 LSI といっ
た次世代情報機能素子です．シリコン半導体を中心に，無機材料，有機材料，生体超分子など新
しい材料を導入して，今までになかった初めての素子を作ります．モットーは，"自分の手で世界
初のデバイスを作る"ことです． 得られた成果は，国内ばかりでなく海外でも積極的に発表しています． 浦岡行治
(From front-left) Yukiharu URAOKA, Kenshiro ASAHI, Kazushi FUSE, Kentaro KAWANO, Takanori IMA-ZAWA, Shogo HORIGUCHI, Koji YAMASAKI, Tomoki MARUYAMA, Yukiko MORITA, Takashi NISHIDA, Yuichi HORI, Ryo ONODERA, Li LU, Yumi KAWAMURA, Yuri ISSE, Emi MACHIDA, Yusuke KOBAYASHI, Kiyoshi UCHIYAMA, Masahiro HORITA, Bin ZHENG, Mutsunori UENUMA, Masashi HINO, Yosuke TOJO, Masaya ONODERA, Masataka NISHIGUCHI, Shota OKAZAKI, Nozomu HATTORI(contributor of our joint-project). Table of Contents
Preface 1 1. People at the laboratory 2 2. Scientific contribution 6 3. List of Publications (published from 04/2009 to 03/2010) 19 4. Collaboration 27 5. Honor of Prizes and News Releases 29 6. Dissertation 30 7. After Graduated Position 30 8. Scientific Instruments and Methods of Analysis 31 9. List of Members 34
10. Site Plan 36 Department URL: http://mswebs.naist.jp/english/index.html
commemorative picture celebrated the first-graduation from our laboratory on March 24th, 2010
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1. People at the laboratory 1.1 Thin Film Transistor Group Members: Mami FUJII, Yumi KAWAMURA, Emi MACHIDA, Tomoki MARUYAMA, Koji YAMASAKI, Masahiro HORITA Realization of high performance information terminal devices on glass or plastic film is our main objective. We are researching formation methods and characterization of silicon thin films by la-ser-ablation technique and oxide semiconductor materials such as ZnO and InGaZnO, in a mate-rial property and TFT performance. シリコンなどの薄膜にレーザーを照射すると結晶性が変化し，ガラスやプラスチックの基板の上
に高性能な LSI やディスプレイを作製することができます．このような手法を用いて，高性能情
報端末を研究しています．
TFT
Flat Panel Displays
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1.2 Bio-Nano-Process Group Members: Kosuke OHARA, Yosuke TOJO, Takanori IMAZAWA, Kentaro KAWANO, Kazushi FUSE, Mutsunori UENUMA, Bin ZHENG Bio-supramolecules have a unique character such as, self-organization, and size uniformity in nano-scale. We are paying a lot of attention to these unique functions of Bio- su-pramolecules in order to enhance performance or functionalize transistor and memory de-vices. Our novel approach, which is blending Bio-technology and Semiconductor-technology, has already produced high performance memory devices. We start to produce new function-alized device in MEMS and Bio-sensor with our novelty process. タンパクなどの生体超分子は，もともとナノスケールで均一なサイズであり，自己組織化能
力という優れた性質を持っています．私たちは，このバイオ系材料を，半導体プロセスに生
かした非常にめずらしい研究を行っています．すでに，この新しいプロセスを使って，ディ
スプレイやメモリなどの作製に成功し，さらなる新しい応用として MEMS やバイオセンサー
の研究も開始しています．
7 nm
12 nm
FFeerrrriittiinn
Fe2O3, Co3O4, PtS, NiOx, Au, CdSe, ZnSe,…
200kV, 300kV-TEM
1100nnmm
CCoo ffeerrrriittiinn ccoorree iinn
ssiilliiccoonn ddiiooxxiiddee
77nnmm
ReRAM
PtNiO
Metal Nano Dot
SiO2
n+Si
PtNiO
Metal Nano Dot
SiO2
n+Si
PtNiO
Metal Nano Dot
SiO2
n+Si
BioLBL
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1.3 Ferroelectrics Group Members: Li LU, Yuri ISSE, Ryo ONODERA, Masataka NISHIGUCHI, Yuichi HORI, Kenshiro ASAHI, Takashi NISHIDA, Kiyoshi UCHIYAMA We aim to produce functionalized thin-film oxide-based ferroelectric material with low cost fabri-cation methods, such as a sputtering system and a sol-gel technique. Deep understanding of the atomic level structure and characteristics of such materials are mandatory, especially for easy fabrication methods. We analyze ferroelectric material in mutual interaction between electrons, photons and phonons and develop novel functionalized memory devices. 物質内での電子，光，音波の相互作用について解析し，原子・分子のレベルまで立ち返っての構
造解析や物性理解をもとに，機能性酸化物材料の薄膜創成や微細加工，新規圧電材料や PTC サー
ミスタ材料の開発の研究を行っています．
XRD 装置
AFM 像
SPT 装置
Hysteresis loop
Glass
Source Drain
Gate Gate insulator: a-BSTA
Semiconductor: I(G)ZO
TFT へ新規材料導入
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1.4 Electroluminescent device Group Members: Yusuke KOBAYASHI, Shogo HORIGUCHI, Masahiro HORITA The realization of a flexible and wearable display/computer is our vision for the future. We intro-duce printable-type inorganic electroluminescent material based on Zinc-Sulfur, in order to fabri-cate a flexible display. We have already succeeded in achieving relatively strong luminescence fabricated on flexible-plastic film. Highly intense luminescence and low-voltage operation are our current objective. 硫化亜鉛などの微粒子を使って，蛍光体の研究を行っています．この材料は，電圧を加えると，
微粒子の内部で電子とホールの再結合によって光が発生し，EL 蛍光体として使うことができます．
印刷技術で作れるために，プラスチック基板の上に蛍光体を塗布することが可能です． 私たちは，このようにして，フレキスブルなディスプレイや，ウェアラブルなコンピュータを目
指した情報端末の実現を目指した研究を行っています．
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2. Scientific Contributions 2.1 The Unique Phenomenon in IGZO TFTs Degradation under Dynamic
Stress Authors: M. Fujii, T. Maruyama, M. Horita, K. Uchiyama, J.S. Jung, J.Y. Kwon, and Y. Ura-oka
In2O3-Ga2O3- ZnO (IGZO) thin-film transistors (TFTs) are promising devices for driving cir-
cuits in next-generation displays. Stability is one of the crucial problems in IGZO TFT. Therefore, we investigated the degradation of these devices.
When IGZO TFT is used in real circuits, not only DC stress but AC stress is applied. We performed an electronic stress test by applying dynamic voltage. The IGZO TFT showed a unique phenomenon of S value change in transfer curve shift under the applied dynamic stress. This degradation was accelerated by stress frequency, S value increased with increasing dynamic stress frequency. During the dynamic stress imposition, high electric fields are applied in the in-terfaces between source, drain electrodes and channel layer. Therefore, the interface was elec-trically damaged by high energy electrons. There is a possibility that a new type state is generated by impact ionization of these electrons with high energy.
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Fig. 1 Change of transfer curve under dynamic stress applied to gate electrode. Stress conditions are ±20V, 500kHz
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Fig. 2 Transfer curve recovery after dynamic stress imposition
Fig. 3 Degradation model under the dynamic Vg stress
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2.2 Electrical Properties of ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition
Authors: Y. Kawamura and Y. Uraoka
In this study, we deposited zinc oxide (ZnO) thin films to an active channel layer in thin film transistor (TFT) by atomic layer deposition (ALD) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD)
The deposited films were annealed at various temperatures in an oxygen ambient gas. The electrical and chemical properties of the ZnO films were measured with and without annealing. The TFTs with PAALD ZnO film showed excellent properties without any degradation of the sub-threshold swing or any large shift of the threshold voltage. Through this study, we found that the residual career concentration is reduced and the high performance ZnO TFTs is possibly ob-tained using PA-ALD at low temperature.
Fig. 2 Transfer char-acteristics of ZnO TFT with Al2O3 gate insula-tor. (Vd = 5 V)
Fig. 1 Transfer characteristics of ZnO TFTs (a) non-annealed and (b) annealed at 300oC. (Vd=5 V )
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2.3 Behavior of Electron Trapping and Detrapping in Defect Sites of Poly-crystalline Silicon Thin Films
Authors: E. Machida Y. Uraoka, and H. Ikenoue
In recent years, polycrystalline silicon (poly-Si) thin films have been widely used in channel material for thin film transistor (TFT). However, the poly-Si films have many electrical defects, and these defects cause a marked reduction in the field-effect mobility of TFT. We have studied local electrical properties of the poly-Si films by conductive atomic force microscopy (C-AFM) and Kel-vin probe force microscopy (KFM). In this paper, we investigate the behavior of electrons in defect sites of grain. The poly-Si films were formed by conventional laser annealing method, and sample structure was poly-Si (50 nm)/ SiO2/ SiNx/ non-alkali glass substrate. C-AFM and KFM meas-urements were performed using Shimadzu SPM-9600 with a platinum-coated cantilever at room temperature in ambient air. Before the measurements, native oxide on the poly-Si films was re-moved using a 5% HF solution.
First, we observed local current images of an identical area of a poly-Si film taken at a con-stant sample voltage of -2.0 V by C-AFM. During the nine scans, the conductivity of the grain boundary was almost unchanged in spite of repeat scanning of the cantilever. It is considered that defect sites are so dense to easily cause hopping conduction; thus, current flowed continuously at the grain boundary. In contrast, conductivity of grain significantly decreased in area with an in-crease in the number of scans. This phenomenon was most often found during the first to fourth scans, and conductivity in grain was almost unchanged after the fifth scan. Next, we measured the rise in surface potential in the poly-Si film due to the fourth scanning C-AFM measurements by KFM. While the rise in surface potential at the grain boundary changed little, that of grain was clearly observed. It is well known that positive charging of defect sites induces the increase in Coulomb scattering of free carrier. Consequently, the reduction of conductivity in grain is caused due to positive charging of defect sites by the electron detrapping from the defect sites to the cantilever. During the seventh to ninth scans, some newly appeared current spots due to repeat scanning were observed in grain. It is considered that electrons which flow in the poly-Si films are trapped at positively charged defect sites, and this reduces coulomb scattering at defect sites. As the result, current spots are newly appeared in the grain. The average and standard deviation of the current spot size was estimated at roughly 5.2 ± 2.2 nm. These newly appeared spots re-peatedly appeared and disappeared. Therefore, we conclude that some electrons repeat trapping and detrapping at defect sites in grain. We also estimated the density of positively charged defect sites from the rise in surface potential measured by KFM. As an estimation, the occupation area of one defect site (density of emitted electrons) was from several nanometers square to tens of na-nometers square, and the result gave close agreement with the area of newly appeared current spot.
Fig. 1 Surface topography (left) and conductive AFM image (right) with -2.0V sample voltage at exactly same position
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2.4 Reliable Control of Filament Behavior in ReRAM using Metal NPs Authors: M. Uenuma, B. Zheng, I. Yamashita, and Y. Uraoka
Bio nano process (BNP) provides excellent uniform nano-scale components, selective ad-sorption, and self assembled structures. The nano particles utilizing a ferritin protein will enable us to use it as an element of future nano devices. Resistive switching phenomena in metal-oxide films have been studied as the next nonvolatile memory. However, according to the proposed resistive switching mechanisms in NiO base resistive memory, it has been reported that the volt-age stress randomly creates conductive filaments inside the metal-oxide matrix, causing large dispersion of memory properties. We investigate the controlled single filament in resistive memory using metal nano particles (NPs). Metal nano particles can be expected to help the formation of the conductive filaments due to the concentration of electric field. Localized conducting filaments by gold nano particles were observed in NiO/gold nano particle (15 nm)/ n+ Si structure using conducting AFM. In addition, we fabricated a ReRAM device embedded with Pt nano particles. Nano particles were obtained using bio-mineralization of Ferritin protein. The ReRAM with Pt NPs shows stable switching behavior. A Pt NP density decrease results in an increase of OFF state resistance and decrease of forming voltage, whereas ON resistance was independent from the Pt NP density, which indicates that a single metal NP in a memory cell will achieve an extremely high-on/off resistance ratio, low power operation and stable operation.
Fig. 1 (a) Schematic drawing of ReRAM with filaments in metal oxide and (b) the produced ReRAM with Pt NP. (c) Simulated electric field applied at voltage between top and bot-tom electrode. The electric field below and above the metal NP is locally concentrated and enhanced. Schematic drawing of the ferritin proteins with PtS core are also shown.
Fig. 2 Cross-sectional TEM image of the fabricated devices shows that NPs with a diameter of approximately 3 nm were embedded in the polycrystalline NiO matrix. EELS Pt mapping image con-firmed that the NP just above the first NiO layer were Pt NPs.
Fig. 3 Resistance values of the set and reset states for 30 switching cycles of with and without Pt NPs. The resistance values were read at 0.5 V in each sweep.
Fig. 4 OFF state resistance and forming voltage plotted against the density of Pt NPs.
TEM image
EELS image
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2.5 Site-directed delivery of ferritin-encapsulated gold nanoparticles Fer-ritin
Authors: B. Zheng, I. Yamashita, M. Uenuma, K. Iwahori, M. Kobayashi, and Y. Uraoka
Newly designed porter proteins, which catch gold nanoparticles and deliver them to silicon dioxide (SiO2) surface selectively under specific conditions were reported. Recombinant apofer-ritin subunits, each of which has gold binding peptide and titanium binding peptide at the C- and N- terminus respectively, can efficiently encapsulate a gold nanoparticle. The bio-conjugate, a na-nogold and surrounding mutant protein subunits, had a property in which it can deliver itself to the SiO2 surface through the interaction. In theory, our genetically manipulated apoferritin subunits can encapsulate gold nanoparticles of various sizes, which is a promising property for applications involving surface plasmon resonance.
Conjugates of protein-GNPs. (a), (b), (c) and (d), TEM image of GNPs, Fer8/GNPs, FG/GNPs and
TFG/GNPs, respectively. All samples were stained by 3% PTA. Bar size: 20 nm.
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2.6 TFT-type Flash Memory with Biomineralized Nanodots on SOI Substrate Authors: K. Ohara, I. Yamashita, and Y. Uraoka
Recently, floating gate memories have attracted much attention as high-performance and low
energy consumption nonvolatile memory. We have fabricated a floating nanodot gate memory by using cage-shaped supramolecular protein, ferritin as shown in Fig. 1. The fabricated bionanodot (BND) floating gate memory showed clear memory operation due to the charge confinement in the embedded BND. Moreover, a TFT-type flash memory was fabricated using ferritin on poly-Si crystallized by solid phase crystallization (SPC). However, the process temperature of this flash memory was up to 600oC, a relatively high temperature. To fabricate high-performance TFT-type flash memory at low temperature, we proposed the fabrication of the TFT-type flash memory on a SOI substrate by using supramolecular protein.
Figure 2 shows the ID-VG characteristic of the fabricated TFT without Co-BND. An ID-VG curve without hysteresis was observed. The threshold voltage, mobility and S factor were -0.92 V, 271 cm2/ (V•s) and 0.16 V/decade, respectively. Figure 3 shows the ID-VG characteristic of the fab-ricated TFT-type flash memory. An ID-VG curve with hysteresis was observed. This hysteresis was caused by the injection of electrons into Co-BNDs and their ejection. The width of the hys-teresis was 3 V.
The charge storage capacity and retention characteristic of the memory with Co-BNDs can be explained on the basis of the charge confinement in the potential well of a Co-BND and the band structure of SiO2. Figure 4 shows the band diagram of the memory during electron injection and ejection. Since the band offset of SiO2 is 3.1 eV and tunnel oxide is 3 nm, the electrons are injected into and ejected from the Co-BNDs by direct tunneling. The work function of metal Co, 5.0 eV, is positioned at the valence band of Si energy bands; thus, we can expect charge retention in metal Co.
Fig. 1 Cross- sectional diagram of the fabricated memory
Fig. 2 ID-VG characteristic of the
Electron injection
Electron ejection
Fig. 4 Band diagram of the fabricated memory
Fig. 3 ID-VG characteristic of the fabricated memory
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Fig. 1 (a) Schematic drawing of BND-embedded stacked sample structure for XPS measurement and MOS capacitor fabrication. (b) XPS spectra of annealed samples for in N2 (100%) atmospheres and (c) H2 (H2 : N2 . 4% : 96%) at different an-nealing temperatures.
(a)
(b) (c)
2.7 Controlled Reduction of Bionanodots for Better Charge Storage Char-acteristics of Bionanodots Flash Memory
Authors: Y. Tojo, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita
We propose a new process technology, named the ‘‘bio-nano-process’’, in which semicon-ductor processing technology and biotechnology are combined. We utilized a ferritin protein cobalt core as a memory node, and succeeded in performing the operation of floating gate memory.
The Co-BND in the protein shell was synthesized as cobalt oxide, Co3O4. XPS spectra of Co-BND after annealing under inert, 100% N2 and reduction in 4% H2 atmospheres are shown in Figs. 1(b) and 1(c), respectively. XPS spectra of Co-BNDs annealed in inert gas [Fig. 1(b)] showed a main peak at 779.5 eV. It is reported that Co3O4 has a Co 2p3/2 peak at 779.5 eV. As we can see in the XPS spectra of N2-annealed samples, the position of the Co 2p3/2 peak shows no dependence on annealing temperature. This means that embedded Co-BNDs were not reduced even at 800oC under inert atmosphere. In contrast to N2 an-nealing, XPS spectra of H2-annealed Co-BNDs show a new peak at 778.3 eV. This peak is assigned to 2p3/2 of metallic Co. In H2 atmos-phere, the metallic Co peak appeared from 350oC, and the increase of annealing temper-ature induced the decline of the Co3O4 peak and the increment of the metallic Co peak. Eventually, only the metallic Co peak was ob-served at 800oC. These results indicated that the annealing atmosphere is more important than the annealing temperature in the control of reduction conditions of embedded BNDs. The peak intensity change after H2 annealing suggests that the control of the reduction ratio between Co3O4 and metallic Co is possible by choosing appropriate annealing temperature and atmosphere, for annealing. Most of the embedded oxide-Co-BNDs were reduced to metal-Co-BNDs above 450oC, which is the annealing temperature applied in the device fabrication process.
Fig. 2 shows the observed capaci-tance–voltage (C–V) characteristics of the fab-ricated Co-BND embedded MOS capacitors. In the case of capacitors without Co-BND [curve (a)], no hysteresis was observed. In contrast, we observed anticlockwise hysteresis due to charge injection to the embedded Co-BND in curves (b) and (c). We observed a larger memory window in the case of the treatment under a reducing atmosphere at 800oC [i.e., curve (c)]. It is of interest that, the Co-BND memory annealed in N2 showed charge confinement in the embedded ‘‘cobalt oxide’’ BNDs.
Fig. 2 Normalized C–V characteristics of samples (a) without Co-BNDs, (b) after 800oC annealing in inert atmosphere, and (c) after 800oC annealing in reducing at-mosphere.
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2.8 Fabrication and Characterization of (Bax, Sr1-x)Ta2O6 Thin Films Using Sol-Gel Method
Authors: L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka
Ba-substituted SrTa2O6, (Bax,Sr1-x)Ta2O6 (x=0, 0.5, 1), thin films were successfully fabricated using the Sol-Gel method. All of the films showed good surface morphologies, which suggested they grew well on the substrates.
The loss tangent and the leakage current density of the (Ba0.5,Sr0.5)Ta2O6 thin film showed very low values of about 0.009 and about 10-8 A/cm2 (measured at 300 kV/cm), respectively, which were almost the same as those of the SrTa2O6 thin film but lower than those of the BaTa2O6 thin film. In turn, the dielectric constant of about 130 for (Ba0.5,Sr0.5)Ta2O6 is higher than those of SrTa2O6 and BaTa2O6 thin films. The mechanism of leakage current for (Ba0.5,Sr0.5)Ta2O6 thin film was analyzed. The ohmic conduction is dominant at the low applied electric field and the Schottky emission is dominant at the high applied electric field. The barrier height between the Pt electrode and the (Ba0.5,Sr0.5)Ta2O6 thin film was estimated to be 0.8 eV.
Fig. 1 The surface morphologies of (a) STA; (b) BSTA(0.5,0.5) and (c) BTA thin films.
Fig. 2 The leakage currents of BSTA thin films as a func-tion of electric fields
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2.9 Fabrication and Electric Characteristics of Y-doped SrZrO3 Thin Films Deposited by Spin-Coat Technique
Authors: Y. Isse, K. Uchiyama, T. Nishida, and Y. Uraoka
Proton conductive oxide is an electrolyte with proton-charged carrier, and is expected for applications such as fuel cell or hydrogen sensor. Thinning of this proton-conductive film leads to decreasing impedance of the electrolyte. Much research focused on thinning the films is per-formed by PLD method, which is supposed to be an unavoidable method as a practical technique. In contract, we introduce a spin-coating method, which is well known as an easy way and shows highly controllability in compound ratio, in order to fabricate proton-conductive oxide films, and evaluate the electronic property in the direction of film thickness.
SrZr0.9Y0.1O3- 5wt% sol-gel solution, which is a precursor, was dropped on Pt/-Al2O3 sub-strate using a spin-coating system. The precursors-coated substrates were annealed in a thermal tube-furnace after drying and pyrolysis reaction on a hot-plate. Electronic characteristics were evaluated after formation of a front electrode through a metal mask, which are deposited by an RF-magnetron sputtering method. As an electronic characterization, AC impedance analysis with LCR-meter was carried out. The evaluation apparatus shown in Fig. 1 allows us to evaluate pro-ton’s conductivity in water vapor atmosphere, in which the temperature is controlled by an iso-thermal bath.
Fig. 2 shows temperature dependence of conductivity, with impedance (ZRe v.s. ZIm) curve measured at 450oC in inset. Wet anneal condition led to higher conductivity than dry condition, suggesting proton conductor appears in wet at-mosphere. The inset in Fig. 2 revealed remark-able reduction of the impedance by 450oC wet-annealing. The reduction ratio reached about one forth.
Fig. 3 shows elapsed time dependence of impedance at 40oC ~ 60oC. As shown in Fig. 3, the higher temperature in isothermal bath, which will conduct the higher saturated vapor pressure, resulted in faster decreasing behavior for the impedance.
Fig. 2 Temperature dependence of conduc-tivity at 350oC ~ 600oC
Fig. 3 Elapsed time dependence of Imped-ance at 40oC ~ 60oC
Fig. 1 Schematic diagram of measuring ar-rangement of conductivity in water vapor atmosphere
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2.10 Fabrication and Characterization of Tunable Device using BST Thin Films on -Al2O3
Authors: R. Onodera, T. Nishida, M. Horita, M. Uenuma, K. Uchiyama, and Y. Uraoka
(Ba,Sr)TiO3, hereafter BST, is extensively expected as a material for a novel microwave device such as a tunable device. We have promoted BST thin film fabrication on -Al2O3 substrate, since this approach has strong benefits for cost-reduction, chemical stability, and dissipation factor. We have already succeeded in obtaining high qual-ity epitaxy on such a substrate. However there are still a lot of problems in the fabrication of waveguide devices to operate successfully. This time, we fab-ricated co-planer type electrodes on BST/-Al2O3
and evaluated the characteristics of the tunability. RF magnetron sputtering method formed BST
thin films on -Al2O3 (001) substrate, in which the deposition condition of 4.5 Pa as deposition pres-sure, 650oC substrate temperature and ambient gas of Ar/O2=9/1. Aluminum evaporation and elec-tron-beam lithography techniques patterned pre-cisely controlled interdigitated electrode (IDE). We designed and analyzed the devices with a SONNET simulator, and evaluated the device structure.
We measured C-V characteristics in planar direction for BST film which has 200 nm thickness, and IDE. The IDE structure was 160 m in length of interdigitated part, 4 m of the frequency, 500 nm, 200 nm, 100 nm for electrode gap, and 50 pairs. The 100 nm gap sample we observed has shown 16.6% tenability in 10V, as shown in Fig. 1. In the case of 25 m for the electrode gap, the tenability was less than 1% even in 200 V applied condition, suggesting our new structure extremely improved the tunability by narrowing the electrode gap.
We designed and simulated the high fre-quency characteristics of microwave-guide type filter devices, which has a mender line length of 60 mm, the length of interdigitated part of 60 m, elec-trode gap of 1 m. The simulation resulted in 6.90 GHz for resonant frequency and 0.74 GHz for the bandwidth, as shown in Fig. 2.
We fabricated microwave tunable device on 200 nm thick BST film, and evaluated the high fre-quency characteristics. We confirmed that the de-vice records the resonance frequency of 7.47 GHz, bandwidth at 1.08 GHz under zero bias, and the resonance frequency shifted to 7.55 GHz by 50V bias as shown in Fig.3, resulting microwave tunable device was successfully operated, using the struc-ture of BST on -Al2O3.
Fig. 1 C-V characteristics of IDE
Fig. 2 Filter property (simulation)
Fig. 3 Tunable filter property
Shift
50V 0V
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2.11 Fabrication and Characterization of Epitaxial RuO2 Thin Film Depos-ited by Liquid Delivery MOCVD
Authors: M. Nishiguchi, H. Ichise, K. Uchiyama, and Y. Uraoka
Highly oriented ferroelectric thin film is indis-pensable to realize good performance of ferroelec-tric properties in thin film structures, since the ori-entation strongly affects the electronic property of ferroelectrics capacitors. The orientation and flat-ness of bottom electrodes and substrates has a strong influence, leading the importance of control-ling the orientation and flatness for substrates. We focused on RuO2 which has relatively low resistivity, superiority for suppression of the element-diffusion on the surface between ferroelectrics film, and grew epitaxitialy the RuO2 film on -Al2O3 by a MOCVD method.
Fig. 1 shows a schematic diagram of our liq-uid-delivery MOCVD apparatus to form RuO2 film on -Al2O3 (single crystalline sapphire) substrate. We demonstrated epitaxitial growth of RuO2 on A-cut, C-cut, R-cut Al2O3 substrate to confirm the crystal-lographyical properties. The resulting R-cut sub-strate produced a highly oriented and crystalline RuO2 film.
Fig. 2 shows -scan spectrum of the epitaxital RuO2 film on R-cut substrate and bare one. It is suggested that RuO2 (101)-plane film grow epitax-itialy on -Al2O3 (110)-plane substrate. As a result our liquid-feed type MOCVD apparatus is able to fabricate highly oriented RuO2 film on sapphire sub-strate.
Fig. 3 shows the resistivity of RuO2 film on R-cut, -Al2O3 substrate. The growth temperature of RuO2 was varied between 550 and 700oC. The film under 650oC growth recorded relatively low resistiv-ity of 6.5210-5 cm. In contrast, 550oC’s sample exhibited 3.510-5 cm resistivity. The 650oC sam-ple, which has low resistivity and also consisted of highly crystalline RuO2 (101)-plane film, could be an available material for bottom electrodes.
Fig. 1 Schematic diagram of liquid deliv-ery MOCVD
Fig.2 -scan of RuO2 thin film on α-Al2O3.
Fig. 3 Resistivity of RuO2 thin films de-posited at various temperature.
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2.12 Fabrication of M3+-doped SrZrO3 Thin Films by Liquid-Delivery MOCVD Method for Solid Oxide Fuel Cell (SOFC)
Authors: Y. Hori, H. Sakairi, K. Uchiyama, T. Nishida, and Y. Uraoka
An electrolyte material with high ion-conductivity at a low temperature or thin-ning of the electrolyte material which reduce the resistivity decreases operative tempera-ture of solid oxide fuel cell (SOFC). Some perovskite-type oxide material appears pro-ton-conductor by substitution of trivalent ca-tions for B-site of the perovskite structure, and Zr or Ce is extensively utilized as the cations. SrZrO3 (SZO) has recorded the highest conductivity in Zr-system, which suggests that it could be expected as a next generation electrolyte for SOFC. We focused on trivalent cation doped SrZrO3 (SZMO) as a material, and tried to fabricate SZMO film using liquid-delivery MOCVD method.
In order to form SZMO, we controlled that A/B site is set to be 1 in SZO, by choos-ing Sr/Zr supply ratio, and doped variety vo-lume of In and Y in SZO with keeping Sr/Zr ratio at a certain value.
Fig. 2 shows atomic ratio in SZMO measure by XRF. Introduced volume of In and Y increased lineally with increasing M (In or Y) volume, with keeping Sr/(Zr+M) ~1, which indicates A/B site ratio was kept at 1. Much higher Indium was introduced in SZO than that of Y which the maximum introduced atomic ratio was 5%, due to an apparatus specification.
Fig. 3 shows diffraction patterns of an-nealing temperature dependence for SZYO(Y=1.3%) film deposited at 600oC. Even in as-deposition state, SZYO film ex-hibited YSZ(111) phase, although that peak disappeared at 1000oC annealing, suggesting crystallized SZYO film is fabricated even in as-deposition state and no-annealing process is required.
For this material, we examined gas-barrier properties using He gas, resulting performance for gas-barrier properties was improved.
Fig.1 The schematic diagram of perovskite-type proton conducting oxide.
Fig.2 Source flow dependence of atomic ratio of SZYO. (a)Y/(Zr+Y) (b)Sr/(Zr+Y)
Fig.3 XRD pattern of annealing temperature dependence. (Deposition temperature is 600oC.)
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2.13 EL Devices Using Inorganic Phosphor Synthesized by Vacuum Mi-crowave System
Authors: T. Taguchi, Y. Kobayashi, and Y. Uraoka
We investigated the characteristics of ZnS phosphor-powders synthesized by vacuum mi-crowaves (VMW) and that of EL emissions using the phosphors.
It was found that the VMW-sintering phosphors showed a strong PL of peak wavelength of 450 nm, and the mixed crystals of cubic and hexagonal types of ZnS do not contain ZnO structure. Using VMW-sintering, the luminance-voltage characteristics of EL devices containing a Cu and a Cu2S as activators give smooth L-V curves, and the maximum luminance of approximately 40 cd/m2 was obtained. As for the ZnS in which a Cu activator is doped using conventional heat treatments previously, the L-V characteristics having a comparatively lower luminance can be seen using the VMW-sintering process, in spite of having a higher PL intensity originally.
Fig. 1 Photoluminescence of phosphors synthesized by VMW-sintering (right) and ZnS raw pow-ders (left) irradiated by UV lamp. (copper compounds were used as an activator.)
Fig. 2 Spectra of ZnS powders before and after Vacuum -MW-sintering.
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3. List of Publications (published 01/2009 ~ 04/2010)
Journals
1. K. Ohara, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru, and Y. Uraoka, “Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric”, Ap-plied Physics Express 2, 095001 (2009). (Collaboration with Semiconductor Technology Academic Research Center)
2. Y. Tojo, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, “Controlled Reduction of Bio-nanodots for Better Charge Storage Characteristics of Bionanodots Flash Memory”, Jpn. J. Appl. Phys. 48, 04C190-1 (2009). (Collaboration with National Chiao Tung Uni-versity and Panasonic Co.)
3. M. Fujii, Y. Uraoka, T. Fuyuki, J. S. Jung, and J. Y. Kwon, “Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors”, Jpn. J. Appl. Phys. 48, 04C091 (2009). (Collaboration with Samsung Advanced Inst. of Tech.)
4. E. Machida, Y. Uraoka, T. Fuyuki, R. Kokawa, T. Ito, and H. Ikenoue, “Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen”, Appl. Phys. Lett. 94, 182104 (2009). (Collaboration with Shimadzu Co., and Kochi National College of Technology)
5. M. Horita, T. Kimoto, J. Suda, “Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11-20) and (1-100) Planes under Group-III-Rich Conditions”, Ap-plied Physics Express 2, 091003 (2009). (Collaboration with Kyoto Univ.)
6. Y. Kawamura, M. Horita, and Y. Uraoka, “Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition”, Jpn. J. Appl. Phys. 49, 04DF19 (2010).
7. K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshi-maru, “Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics”, Jpn. J. Appl. Phys. 48, 04C153 (2009). (Collaboration with Semiconductor Technology Academic Research Center)
8. B. Zheng, I. Yamashita, M. Uenuma, K. Iwahori, M. Kobayashi, and Y. Uraoka, “Site-directed delivery of ferritin-encapsulated gold nanoparticles”, Nanotechnology 21, 045305, (2010)
9. K. Ohara, I. Yamashita, and Y. Uraoka, “Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator”, Jpn. J. Appl. Phys. 49, 04DJ05 (2010).
International Conference
1. Y. Kawamura and Y. Uraoka, “Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition”, Proc. Int. Meeting for Future of Electron Devices, Kansai, (Osaka, Japan, 2009) SA-9.
2. M. Fujii, H. Kawashima, M. Kasami, K. Yano, T. Fuyuki, and Y. Uraoka, “Effect of high pressure vapor anneal treatment of the interface between IGZO (In2O3-Ga2O3-ZnO)”, Proc. Int. Meeting for Future of Electron Devices, Kansai, (Osaka, Japan, 2009) SB-1. (Collaboration with Idemitsu Kosan Co., Ltd)
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3. K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshi-maru, “Floating Gate Memory Devices Based on Ferritin Nanodots on High-k Gate Di-electrics”, Proc. Int. Meeting for Future of Electron Devices, Kansai, (Osaka, Japan, 2009) SC-2. (Collaboration with Semiconductor Technology Academic Research Cen-ter)
4. E. Machida, Y. Uraoka, R. Kokawa, T. Ito, and H. Ikenoue, “Conductivity and Surface Potential in Poly-Si Thin Films by Scanning Probe Microscopy”, Proc. Int. Meeting for Future of Electron Devices, Kansai, (Osaka, Japan, 2009) SC-13. (Collaboration with Shimadzu Co., and Kochi National College of Technology)
5. M. Fujii, Y. Uraoka, T. Fuyuki, J. S. Jung, and J. Y. Kwon, “Experimental and Theo-retical Analysis of In2O3-Ga2O3-ZnO Thin Film Transistors under Constant Voltage Stress”, Proc. Int. Thin Film Transistor Conf., (Paris, France, 2009) 11-3. (Collaboration with Samsung Advanced Inst. of Tech.)
6. E. Machida, Y. Uraoka, T. Fuyuki, R. Kokawa, T. Ito, and H. Ikenoue, “Conductive-AFM Measurements of Poly-Si Thin Films Formed by ELA”, Proc. Int. Thin Film Transistor Conf., (Paris, France, 2009) P19. (Collaboration with Shimadzu Co., and Kochi National College of Technology)
7. K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshi-maru, “Floating gate memory based on ferritin nanodots with high-k gate dielectrics”, Proc. Int. Thin Film Transistor Conf., (Paris, France, 2009) P25. (Collaboration with Semiconductor Technology Academic Research Center)
8. K. Ohara, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshimaru, “Floating Gate Memory Devices Based on Ferritin Nanodots with High-k Gate Dielectrics”, Proc. Silicon nanoelectronics Workshop, (Kyoto, Japan) 5-17.(Collaboration with Semicon-ductor Technology Academic Research Center)
9. M. Horita, T. Kimoto, and J. Suda, “4H-Polytype AlN/AlGaN MQW Structure Iso-polytypically Grown on m-Plane 4H-SiC”, Proc. 51st Electronic Materials Conf., (Penn-sylvania, USA, 2009) P5. (Collaboration with Kyoto Univ.)
10. Y. Kawamura and Y. Uraoka, “Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition”, Proc. Int. Conf. on Solid State Devices and Materials, (Miyagi, Japan, 2009) J-5-3.
11. K. Ohara, I. Yamashita, and Y. Uraoka, “TFT-type Flash Memory with Biomineralized Nanodots on SOI substrate”, Proc. Int. Conf. on Solid State Devices and Materials, (Miyagi, Japan, 2009) K-2-3.
12. M. Fujii, T. Fuyuki, J. S. Jung, J. Y. Kwon, and Y. Uraoka, “(Invited) Analysis and Im-provement of Reliability in IGZO TFT for Next Generation Display”, Proc. 9th Int. Meet-ing on Information Display, (Seoul, Korea, 2009) 26-3.(Collaboration with Samsung Advanced Inst. of Tech.)
13. Y. Tojo, A. Miura, T. Fuyuki, I. Yamashita, and Y. Uraoka, “Crystallization of Amorphous Si by Pulse Annealing with Ni Ferritins”, Proc. 9th Int. Meeting on Information Display, (Seoul, Korea, 2009) 26-3. (Collaboration with National Chiao Tung Univ., and Pana-sonic Co.)
14. M. Horita, T. Kimoto, and J. Suda, “Growth and Characterization of Nonpolar 4H-AlN/AlGaN Multiple Quantum Wells on 4H-SiC Substrates”, Proc. 8th Int. Conf. on Nitride Semiconductors, (Jeju, Korea, 2009) T5. (Collaboration with Kyoto Univ.)
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15. K. Ohara, I. Yamashita, and Y. Uraoka, “Floating Gate Memory Devices Based on Fer-ritin Nanodots with High-k Gate Dielectrics”, Proc. Int. Symp. on Advanced Nanodevices and Nanotechnology, (Hawaii, USA, 2009) P1-15.
16. M. Uenuma, K. Kawano, M. Horita, and S. Yoshii, “Resistive random access memory utilizing ferritin protein with Pt nanodot”, Proc. Int. Symp. on Advanced Nanodevices and Nanotechnology, (Hawaii, USA, 2009) P1-16 (Collaboration with Panasonic Co.)
17. M. Fujii, T. Fuyuki, J. S. Jung, J. Y. Kwon, and Y. Uraoka, “Electrical and thermal stress analysis of In2O3Ga2O3ZnO Thin-Film Transistor”, Proc. Materials Research Society Fall Meeting, (Boston, USA, 2009)1201, 1201-H05-11. (Collaboration with Samsung Ad-vanced Inst. of Tech.)
18. E. Machida, Y. Uraoka, and H. Ikenoue, “Behavior of Electron Trapping and Detrapping in Defect Sites of Polycrystalline Silicon Thin Films”, Proc. Materials Research Society Fall Meeting, (Boston, USA, 2009) P2-6. (Collaboration with Kochi National College of Technology)
19. Y. Kawamura and Y. Uraoka, “ZnO Thin Film Transistors fabricated by atomic layer de-position”, Proc. Material Research Society Fall Meeting, (Boston, USA, 2009) 1201, 1201-H10-27.
20. N. Taguchi, Y. Kobayashi, and Y. Uraoka, “EL Devices Using Inorganic Phosphor Sin-tered by Vacuum Microwave System”, Proc. The 16th Int. Display Workshops, (Miyazaki, Japan, 2009) PHp-21. (Collaboration with Image Tech Inc.)
21. M. Fujii, T. Maruyama, M. Horita, K. Uchiyama, J. S. Jung, J. Y. Kwon, and Y. Uraoka, “The unique phenomenon in IGZO TFTs degradation under dynamic stress”, Proc. Int. Thin-Film Transistor Conf. (Hyogo, Japan, 2010) St6. (Collaboration with Samsung Advanced Inst. of Tech.)
22. L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, “Fabrication and Charac-terization of (Bax, Sr1-x)Ta2O6 Thin Films Using Sol-Gel Method”, Proc. Int. Thin-Film Transistor Conf. (Hyogo, Japan, 2010) P17.
23. Y. Kawamura and Y. Uraoka, “Electrical Properties of ZnO Thin Film Transistors Fabri-cated by Atomic Layer Deposition”, Proc. Int. Thin-Film Transistor Conf. (Hyogo, Japan, 2010) P22.
24. Y. Tojo, A. Miura, I. Yamashita, and Y. Uraoka, “Location controls of crystallization areas utilizing nickel ferritins”, Proc. Int. Thin-Film Transistor Conf. (Hyogo, Japan, 2010) 3A.4. (Collaboration with National Chiao Tung University, and Panasonic Co.)
25. H. Zhao, H. Kimura, Z. Cheng, X. Wang, and T. Nishida, “A potential room temperature multiferroic material: Bi2FeMnO6”, Proc. Int. Conf. On Nanoscience and Nanotechnology (Sydney, Australia, 2010) 123. (Collaboration with National Inst. for Materials Science, and Univ.of Wollongong)
Domestic (* All proceedings were written in Japanese)
1. T. Nishida, K. Nakamura, Y. Kawakami, M. Echizen, H. Takeda, K. Uchiyama, “Prepara-tion of atomically flat substrate for PbTiO3 nano crystal growth (PbTiO3ナノ結晶形成のための原子平坦基板作製)”, Proc. Annual Meeting of The Ceramic Society of Japan, 2009 (日本セラミックス協会 2009 年年会, Tokyo) 2P025.
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2. M. Fujii, Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, “Effect of high pressure vapor anneal treatment of the interface between ZnO and SiO2 thin film (ZnO/SiO2薄膜界面における高圧水蒸気アニール処理効果)”, Abst. JSAP the 56th Spring Meeting (2009 年春季 第 56 回応用物理学関係連合講演会, Ibaraki) 2a-ZJ-10.
3. K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshi-maru, “Bio-nano dot floating gate memory with High-k films (高誘電率ゲート絶縁膜を利用したバイオ系ナノドット型フローティングゲートメモリ)”, Abst. JSAP the 56th Spring Meeting (2009 年春季 第 56 回応用物理学関係連合講演会, Ibaraki) 2p-V-4.
4. L. Lu, M. Echizen, K. Uchiyama, and T. Shiosaki, “Electric Properties and Fabrication of Amorphous (Bax,Sr1-x)Ta2O6 Thin Films by Using MOD Method (MOD 法によるアモルファス(Bax,Sr1-x)Ta2O6 薄膜の作製とその電気的特性)”, Abst. JSAP the 56th Spring Meet-ing (2009 年春季 第 56 回応用物理学関係連合講演会, Ibaraki) 30p-H-16.
5. T. Nishida, Y. Awakami, T. Nozaka, K. Uchiyama, and T. Shiosaki, “Deposition of (Ba,Sr)TiO3 films for microwave tunable devices and their electrical properties (アルミナ上への(Ba,Sr)TiO3薄膜の作製と電気的特性)”, Abst. JSAP the 56th Spring Meeting (2009年春季 第 56 回応用物理学関係連合講演会, Ibaraki) 30a-P3-13.
6. Y. Kawamura, Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, “Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition (原子層堆積法(ALD)による ZnO-TFTにおける熱処理の効果)”, Abst. JSAP the 56th Spring Meeting (2009 年春季 第 56 回応用
物理学関係連合講演会, Ibaraki) 31p-Zk-3.
7. K. Ohara, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru, and Y. Uraoka, “Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric (High-k 膜を利用したバイオ系ナノドット型フローティングゲートメモリ)”, Proc. Technical Committee on Silicon Device and Materials, (シリコン材料・デバイス研究会, Tokyo, 2009) 15. (Collaboration with Semiconductor Tech. Academic Research Center)
8. Y. Kobayashi, N. Taguchi, and Y. Uraoka, “Improvement of Luminescence Property of Inorganic EL Phosphor Sintered by Microwave in Vacuum (真空中マイクロ波焼成による無機 EL 蛍光体の発光特性の改善)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70回 秋季応用物理関連学術講演会, Toyama, 2009) 8a-A-21. (Collaboration with Image Tech Inc.)
9. L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, “Fabrication and Evaluation of (Bax,Sr1-x)Ta2O6 Thin Films using Sol-Gel Method (Sol-Gel 法による(Bax,Sr1-x)Ta2O6
薄膜の作製と評価)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70回 秋季応用物理
関連学術講演会, Toyama, 2009) 8a-ZH-2.
10. R. Onodera, T. Nishida, K. Uchiyama, M. Horita, M. Uenuma, and Y. Uraoka, “Fabrica-tion and Characterization of Tunable Device using BST Thin Films on -Al2O3 (-Al2O3
基板上の BST 薄膜を用いたチューナブルデバイスの作製と評価)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会 , Toyama, 2009) 8a-ZH-3.
11. T. Nishida, M. Horita, M. Uenuma, K. Uchiyama, T. Shiosaki, and Y. Uraoka, “Formation of Atomically Flat Surface of Sapphire Substrates and Growth of Dielectric Nanocrystals (サファイア基板の原子平坦面の形成とその上への誘電体ナノ結晶の成長)”, Abst. JSAP,
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the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 8a-ZH-7. (Collaboration with Shibaura Inst. of Tech.)
12. B. Zheng, I. Yamashita, and Y. Uraoka, “フェリチンを用いた金ナノ粒子のコーティング”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 8a-ZL-8.
13. M. Horita, T. Kimoto, and J. Suda, “4H-SiC 上への無極性面 4H ポリタイプ AlN/AlGaN MQW 構造の作製と特性評価”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 8p-J-1. (Collaboration with Kyoto Univ.)
14. M. Uenuma, I. Yamashita, and Y. Uraoka, “Pt ナノ粒子の抵抗変化メモリ応用”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 9a-H-5. (Collaboration with Kochi National College of Technology)
15. E. Machida, Y. Uraoka, and H. Ikenoue, “Scanning Probe Microscope Analysis for Electron Trapping and Detrapping in Defect Sites of Poly-Si Thin Films (SPM を用いたpoly-Si 薄膜中欠陥準位における電子の捕獲・放出挙動観察)”, Abst. JSAP, the 70th Au-tumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 9a-TG-8. (Collaboration with Kochi National College of Technology)
16. Y. Hori, H. Sakairi, K. Uchiyama, and Y. Uraoka, “Fabrication and characterization of Y-doped SrZrO3 thin films by liquid-delivery MOCVD method (液体供給 MOCVD 法による Y 添加 SrZrO3薄膜の作製と評価)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70回 秋季応用物理関連学術講演会, Toyama, 2009) 10a-L-5.
17. Y. Isse, K. Uchiyama, T. Nishida, and Y. Uraoka, “Fabrication of proton-conductive thin film deposited by spin-coat technique (スピンコート法によるプロトン導電性酸化物薄膜の作製)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70回 秋季応用物理関連学術
講演会, Toyama, 2009) 10a-L-6.
18. K. Ohara, I. Yamashita, and Y. Uraoka, “TFT-type Flash Memory with Nanodots on SOI (SOI 基板上へのナノドット型 TFT フラッシュメモリの作製)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会 , Toyama, 2009) 10a-TG-5.
19. M. Nishiguchi, H. Ichise, K. Uchiyama, and Y. Uraoka, “Fabrication and characterization of epitaxial PZT thin film on epitaxially grown RuO2 thin film (エピタキシャル成長させたRuO2 薄膜上へのエピタキシャルＰＺＴ薄膜の作製と評価)”, Abst. JSAP, the 70th Au-tumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 11a-L-9.
20. Y. Kawamura and Y. Uraoka, “Effect of post thermal annealing of ZnO TFTs by atomic layer deposition (原子層堆積法(ALD)による ZnO-TFT における熱処理の効果)”, Abst. JSAP, the 70th Autumn Meeting, 2009 (第 70 回 秋季応用物理関連学術講演会, Toyama, 2009) 11p-J-6.
21. R. Onodera, T. Nishida, K. Uchiyama, and Y. Uraoka, “Effect of Dielectric Characteristics by Fine Patterning of Tunable Wave Guide on BST Thin Films (BST薄膜によるチューナブル導波路の微細化と誘電特性への影響)”, Proc. the 22nd Fall Meeting of The Ceramics Society of Japan, (日本セラミックス協会 第 22 回秋期シンポジウム, Matsuyama, 2009) 1PA05.
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22. L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, “Fabrication and Evaluation of SrTa2O6 Thin Films Using Chemical Solution Deposition Method (化学溶液堆積(CSD)法による MIM 構造 SrTa2O6薄膜キャパシターの作製と電気特性)”, Proc. the 22nd Fall Meeting of The Ceramics Society of Japan, (日本セラミックス協会 第 22 回秋期シンポ
ジウム, Matsuyama, 2009) 1PA08.
23. T. Nishida, Y. Kawakami, K. Uchiyama, Y. Uraoka, “Preparation of BST thin films on alumina substrate and their electrical property (アルミナ基板を用いた BST 薄膜の作製と電気的特性)”, Proc. the 22nd Fall Meeting of The Ceramics Society of Japan, (日本セ
ラミックス協会 第 22 回秋期シンポジウム, Matsuyama, 2009) 1A04.
24. K. Uchiyama, Y. Hori, Y. Isse, Y. Uraoka, T. Kariya, and M. Yanagimoto, “多孔質基板上に作製した薄膜固体電解質とその燃料電池応用”, Proc. the 22nd Fall Meeting of The Ce-ramics Society of Japan, (日本セラミックス協会 第 22 回秋期シンポジウム, Ma-tsuyama, 2009) 1A09. (Collaboration with Sanyo Special Steel, Co. Ltd.)
25. Y. Isse, K. Uchiyama, T. Nishida, and Y. Uraoka, “Electric characteristics of pro-ton-conductive Y-doped thin films deposited by spin-coat technique (スピンコート法による Y 添加プロトン導電性酸化物薄膜の電気的特性)”, Proc. the 22nd Fall Meeting of The Ceramics Society of Japan, (日本セラミックス協会 第 22 回秋期シンポジウム, Matsuyama, 2009) 2PF06.
26. M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, J. Y. Kwon, T. Naka-nishi, and M. Kimura, “(Invited)Threshold Voltage Shift in Ga2O3-In2O3-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress ”, Proc. 9th Kansai colloquium electron device workshop, (第 9回 関西コロキアム電子デバイスワークショップ, Osaka, 2009) II-2. (Collaboration with Samsung Advanced Inst. of Tech., and Ryukoku Univ.)
27. Y. Kawamura and Y. Uraoka, “Electrical properties of ZnO-TFTs by atomic layer deposi-tion”, Proc. the 6th Thin Film Materials & Devices Meeting, (薄膜デバイス材料研究会 第6 回研究集会, Kyoto, 2009) 2P35.
28. L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, “Fabrication and Evaluation of SrTa2O6 thin films using CSD method (CSD 法による SrTa2O6薄膜の作製と評価)”, Proc. the 6th Thin Film Materials & Devices Meeting, (薄膜デバイス材料研究会 第6回研
究集会, Kyoto, 2009) 2P41.
29. Y. Hori, H. Sakairi, K. Uchiyama, T. Nishida, and Y. Uraoka, “Fabrication of Y-doped SrZrO3 thin films by liquid-delivery MOCVD method for SOFC (液体供給 MOCVD 法による固体酸化物型燃料電池(SOFC)用 Y 添加 SrZrO3薄膜の作製)”, Proc. the 6th Thin Film Materials & Devices Meeting, (薄膜デバイス材料研究会 第 6 回研究集会, Kyoto, 2009) 2P43.
30. M. Nishiguchi, H. Ichise, K. Uchiyama, and Y. Uraoka, “Fabrication and characterization of epitaxial RuO2 thin film deposited by liquid delivery MOCVD (液体供給 MOCVD 法によるエピタキシャル RuO2薄膜の作製と評価)”, Proc. the 6th Thin Film Materials & De-vices Meeting, (薄膜デバイス材料研究会 第 6 回研究集会, Kyoto, 2009) 2P44.
31. K. Uchiyama，Y. Hori, Y. Isse, Y. Uraoka, T. Kariya, and K. Yanagimoto, “Solid Oxide Fuel Cells (SOFCs) with thin film electrolyte (薄膜電解質を用いた固体酸化物型燃料電池(SOFC))”, Proc. the 6th Thin Film Materials & Devices Meeting, (薄膜デバイス材料研
究会 第 6 回研究集会, Kyoto, 2009) 2P59. (Collaboration with Sanyo Special Steel, Co. Ltd.)
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32. Y. Kobayashi, N. Taguchi, M. Susaki, M. Horita, and Y. Uraoka, “Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering (真空中マイクロ波焼成による ZnS 系無機 EL 蛍光体の発光特性の改善)”, Proc. Technical Com-mittee on Silicon Device and Materials, (シリコン材料・デバイス研究会, Nara, 2009) 1.
33. L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, “Fabrication and Evaluation of SrTa2O6 Thin Films Using Sol-Gel Method (ゾルゲル法による SrTa2O6薄膜キャパシターの作製と電気特性評価)”, Proc. ゲートスタック研究会 ─材料・プロセス・評価の
物理─ (Shizuoka, 2009) P01.
34. T. Nishida, Y. Yoneda, K. Tamura, D. Matsumura, H. Kimura, M. Horita, M. Uenuma, K. Uchiyama, and Y. Uraoka, “Fabrication of PbTiO3 nanocrystal array structure on atomi-cally flat sapphire and their evaluation (原子平坦サファイア基板上へのPbTiO3ナノ結晶アレイの作製と評価)”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用
物理学関係連合講演会, Kanagawa) 17p-TR-1. (Collaboration with Japan Atomic Energy Agency, and National Inst. of Materials Science)
35. K. Asahi, T. Nishida, M. Horita, M. Uenuma, K. Uchiyama, and Y. Uraoka, “Fabrication of atomically flat Pt layer on sapphire substrate for PbTiO3 nanocrystal growth (PbTiO3ナノ結晶形成のためのサファイア基板上への原子平坦 Pt 膜の作製)”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学関係連合講演会 , Kanagawa) 18p-ZC-1.
36. R. Onodera, T. Nishida, K. Uchiyama, M. Horita, M. Uenuma, and Y. Uraoka, “Fabrica-tion and Characterization of Tunable Device using BST Thin Films on -Al2O3 Ⅱ (-Al2O3 基板上の BST 薄膜を用いたチューナブルデバイスの作製と評価Ⅱ)”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学関係連合講演会, Kanagawa) 18p-ZC-5.
37. L. Lu, M. Echizen, T. Nishida, K. Uchiyama, Y. Uraoka, “Electrical Properties of BaTa2O6
Thin Films Annealed in O2 Atmosphere (酸素雰囲気でアニールしたBaTa2O6薄膜の電気特性)”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学関係連合
講演会, Kanagawa) 18p-ZC-7.
38. Y. Isse, K. Uchiyama, T. Nishida, and Y. Uraoka, “Fabrication and Electric characteristics of Y-doped SrZrO3 thin films by spin-coat technique (スピンコート法による Y-doped SrZrO3の作製及び電気的特性評価)”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学関係連合講演会, Kanagawa) 18p-ZC-9.
39. Y. Kawamura and Y. Uraoka, “原子層堆積（ALD）法による Al2O3および ZnO 薄膜の成膜と薄膜トランジスタへの応用”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第57 回 応用物理学関係連合講演会, Kanagawa) 19a-TM-2.
40. B. Zheng, I. Yamashita, and Y. Uraoka, “フェリチンダイマーの作製”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学関係連合講演会, Kanagawa) 19a-ZF-10.
41. S. Horiguchi, Y. Kobayashi, M. Horita, N. Taguchi, and Y. Uraoka, “真空中マイクロ波焼成により作製した ZnS 系 EL 蛍光体の評価”, Abst. JSAP, the 57th Spring Meeting, (2010年春季 第 57 回 応用物理学関係連合講演会, Kanagawa) 20a-TF-7. (Collaboration with Image Tech Inc.)
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42. K. Kawano, M. Uenuma, B. Zheng, I. Yamashita, and Y. Uraoka, “金ナノ粒子による抵抗変化型メモリ中の導電パスの制御”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学関係連合講演会, Kanagawa) 20a-TQ-2.
43. M. Uenuma, K. Kawano, S. Yoshii, I. Yamashita, and Y. Uraoka, “CoO ナノ粒子の抵抗変化メモリ応用”, Abst. JSAP, the 57th Spring Meeting, (2010 年春季 第 57 回 応用物理学
関係連合講演会, Kanagawa) 20a-TQ-3.
44. T. Nishida, K. Asahi, K. Fuse, Y. Yoneda, K. Tamura, D. Matsumura, H. Kimura, M. Ho-rita M. Uenuma, K. Uchiyama, and Y. Uraoka, “Fabrication of PbTiO3 self-organized nano-crystal array by low glancing angle incidence sputtering, and their evaluation (斜入射スパッタ法による PbTiO3 の自己組織化ナノ結晶アレイの作製と評価)”, Abst. JPS Spring Meeting, the 65th JPS Annual Meeting, (日本物理学会第 65 回年次大会, Oka-yama, 2010) 21aPS-95. (Collaboration with Japan Atomic Energy Agency, and National Inst. of Materials Science)
45. T. Nishida, K. Asahi, K. Fuse, M. Horita, M. Uenuma, K. Uchiyama, H. Kimura, and Y. Uraoka, “Preparation of atomically flat substrate for PbTiO3 nano crystal growth (PbTiO3
ナノ結晶形成のための原子平坦基板上への平坦 Pt 成膜)”, Proc. Annual Meeting of The Ceramic Society of Japan, (日本セラミックス協会 2010 年年会, Tokyo, 2010) 2P017. (Collaboration with National Inst. of Materials Science)
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4. Collaborations 4.1 Projects CREST(Competitive Funding for Team-based Basic Researches) – JST(Japan Science and
Technology) during 2008-2012 Research Area: Creation of Nanosystems with Novel Functions through Process Inte-gration (プロセスインテグレーションによる次世代システムの創製)
Research Theme: Highly Functional Nano System Fabricated by Bio Frontier Process（生
体超分子援用フロンティアプロセスによる高機能化ナノシステム） Collaboration: Osaka University, Kobe University, Toyota Technological Institute, The Cancer Institute of Japanese Foundation for Cancer Research
Funds in 2009 6 projects which were accepted from JSPS funds were promoted.
10 projects received donated funds.
Kansai Research Foundation for technology promotion
Research Theme: Unique difference of incorporation rate of Ga in nonpolar-AlGaN growth（無極性面 AlGaN 成長における Ga 取り込み率の異常な差異）
Funds from NAIST in 2009 6 projected which were accepted from NAIST internal competitive funds were promoted.
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4.2 Joint research (01/2009 ~ 04/2009) Atomic Energy Agency during 2009
Research Theme: Fabrication of self-organized PbTiO3 nano-crystal
Idemitsu Kosan Co. LTD. during 2009 - 2011 Research Theme: Characterization of TFT utilized oxide semiconductor
Image Tech Inc. during 2009-2010 Research Theme: Development of flexible inorganic EL devices
Kochi National College of Technology Research Theme: Characterization of low-T poly-Si films
Mitsui Engineering & Shipbuilding Co., LTD. during 2009 - 2010 Research Theme: Application of thin films deposited by ALD method
National Institute of Materials Science during 2009 Research Theme: Fabrication of atomically controlled PbTiO3 films
Samsung Advanced Institute of Technology during 2009 Research Theme: Characterization of reliabilities for TFT with IGZO films
Semiconductor Technology Academic Research Center during 2009 Research Theme: Nano-dot type floating gate memory utilizing biomineralization
Shimadzu Co. during 2009 Research Theme: Characterization of low-T poly-Si films
Sumitomo Electric Industries, LTD. during 2009-2010 Research Theme: Fabrication and evaluation of TFT used oxide semiconductors
Sysmex Co. during 2009-2010 Research Theme: Basic research of bio-sensor utilizing bio-nano-process
Panasonic Co. Research Theme: Fabrication of electronic devices through Bio-Nano-Process
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5. Honor of Awards, and News Releases (01/2009 ~ 04/2010) 5.1 Awards 2009/6/3, Kosuke Ohara, IEEE, EDS, Kansai Chapter, IMFEDK, Student Paper Award “Floating Gate Memory Devices Based on Ferritin Nanodots on High-k Gate Dielectrics”
2009/8/2, Mami Fujii, AMFPD(2008),Student Award "Degradation in Ga2O3-In2O3-ZnO thin film transistors under Constant Voltage Stress" "New Synthesis Method using Microwave Thermo Catalysis for Inorganic EL Displays"
2009/11/17, Masahiro Horita, JSPA Encouragement Award (the 56th Spring Meeting), 応用物理学会講演奨励賞（第 56 回春季応用物理学関係連合講演会） “4H-SiC m 面上への 4H ポリタイプ AlN/AlGaN MQW 構造の作製と発光特性評価”
5.2 News Releases
Opened a semiconductor-device school for 5 and 6 grade elementary students (読売新聞, Yomiuri Shinbun, 2009/8/23)
CNT growth on MEMS device, through Bio-nano process with ferritin protein substances (日刊工業新聞, Nikkan Kogyo Shinbun, 2009/9/10)
Enhanced performance for resistive-RAM device which metal nano-dots are embedded in oxide semiconductor, utilizing Bio-technique (科学新聞, Kagaku Shinbun, 2009/12/11)
Enlarged capacity more than 100 times for resistive-RAM device which metal nano-dots are em-bedded in oxide semiconductor, utilizing Bio-technique (日刊工業新聞, Nikkan Kogyo Shinbun, 2009/12/28)
Low-cost fabrication technology using microwave sintering for inorganic electroluminescent mate-rial (日経産業新聞, Nikkei Sangyo Shinbun, 2010/1/20)
Development of low-cost fabrication technology for Zinc-Sulfur- based inorganic electrolumines-cent material, using household microwave oven (日刊工業新聞, Nikkan Kogyo Shinbun, 2010/2/5)
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6. Dissertation 6.1 Doctor course (2009)
No applicable student because this laboratory has been established last year.
6.2 Master course (2009) 一瀬 悠里 (Yuri ISSE)
スピンコート法による Y ドープ SrZrO3 薄膜の形成とイオン導
電性解析
小野寺 亮 (Ryo ONODEARA)
-Al2O3 基板上の(Ba,Sr)TiO3 薄膜を用いたマイクロ波チューナ
ブルデバイスの形成とその電気的特性
川村 悠実 (Yumi KAWAMURA)
原子層堆積法による酸化亜鉛薄膜の低温形成とデバイス応用
小林 祐輔 (Yusuke KOBAYASHI)
フレキシブルティスプレイの実現に向けたマイクロ波焼成法
を用いた ZnS 無機 EL 蛍光体の研究
西口 眞敬 (Masataka NISHIGUCHI)
高配向電極上に形成した強誘電体薄膜の電気的特性評価
堀 祐一 (Yuichi HORI)
薄膜電解質を用いた固体酸化物型燃料電池セルの形成
町田 絵美 (Emi MACHIDA)
走査型プローブ顕微鏡を用いた多結晶シリコン薄膜の新規電
子物性評価手法の確立
呂 莉 (Li LU)
ゾルゲル法で作成した(Bax,Sr1-x)Ta2O6薄膜の電気特性
Every thesis was written by Japanese. 7. After Graduated Position
In March of 2009, 8 Students (master course) have graduated from this laboratory. We proudly brought them in the society, and strongly believe their great performances in the society. The places of employment of them are as follows: Sandisk Co., Sekisui Chemical Co. Ltd., Iwatani Co., Yokogawa Electric Co., Ministry of Defense (Japan), and our doctor course (3 students). We hope they continue great performance, and contribute to society, not only in Japan, but also in global.
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8. Scientific Instruments and Methods of Analysis 8.1 Deposition Methods Material Deposition Method Application Contact
Insulative films SiO2, SiNx
Sputtering (RF) Thermal oxidation fur-nace (dry, pyrogenic), CVD from TEOS
Passivation for solar cells, TFTs Gate-insulator for TFTs
Horita
Amorphous Si Sputtering Low T poly-Si Horita
Crystal Si Laser crystallization (green laser)
Low T poly-Si Horita
Oxide semiconductors (InGaZnO, ZnO)
Sputtering (RF, DC) Plasma-assisted atomic Layer Deposition system (RF)
Transparent TFTs Horita Ishikawa
Ferroelectric ceramics Sputtering (RF), Spin-coating
Fe-RAM Nishida
Metal (Ti, Mo, Pt, Ni, etc.)
Electron beam evapora-tion, Resistive heating, Sputtering
Electrode for elec-tronic devices
Horita
Transparent conduc-tive films (ITO)
Sputtering (RF, 3 ele-ment system)
Electrode of solar cell, Transparent TFTs
Horita
Inorganic EL (ZnS) Screen printing EL device Horita
8.2 Process Methods
Method Material Application Contact
Photolithography sys-tem
Semiconductor materi-als, metal films
TFTs, device pat-terning
Horita
Inductive-coupled plasma reactive ion etching
Semiconductor materi-als
TFTs, device pat-terning
Horita
Anneal furnace (Thermal, RTA)
Semiconductor materi-als, Ferroelectric ce-ramics, EL materials
Fe-RAM, EL devices, TFTs
Horita Nishida
Ultraviolet ozone gen-erator
Semiconductor materi-als
Bio-nano process Uenuma
High pressure vapor anneal
Semiconductor materi-als(InGaZnO)
TFTs Ishikawa Horita
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8.3 Structural Material Analysis
Method Material Application Contact
Photoelectron spec-troscopy (XPS)
Semiconductor sur-faces, thin films (ZnO, InGaZnO)
Chemical bonding of materials
Horita
Secondary Ion Mass Spectroscopy (SIMS)
Compositional analysis of thin films
Chemical composi-tion, depth profiling
Horita
Atomic Force Micro-scope (AFM, -conductive, -Kelvin-probe)
Low T poly-Si Surface roughness, electrical profile, po-tential profile, struc-ture,
Horita
Transparent electronic Microcopy (300kV/200keV)
Structural analysis of thin films and nano-dot devices
High resolution structural analysis
Horita Uenuma
Field Emission Scan-ning Electronic Mi-croscopy (FE-SEM) Energy Dispersive X-ray Analysis
Thin film poly-Si Ferroelectric ceramics EL material (ZnS)
Structure, chemical composition
Horita Uenuma
X-ray Diffractmetry X-ray Fluorescence Analysis
Thin film poly-Si Ferroelectric ceramics EL material (ZnS)
Phase analysis Nishida
Optical Microscope
Semiconductor films, metal films, devices
Surface morphology Nishida
Stylus profiler Semiconductor films, metal film, devices
Film thickness, sur-face roughness
Horita
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8.4 Analysis of Optical Properties Method Materials Application Contact
Photoluminescence EL materials (ZnS) Nano-dot materials
Band structure, Size of nano-particles
Horita
FT-IR spectroscopy Thin film poly-Si Surface bonding structure
Nishida
Raman spectroscopy Thin film poly-Si Crystallinity Nishida
8.5 Analysis of Electrical Properties Method Materials Application Contact
Emission microscope Thin film poly-Si Oxide semiconductor
Analysis of TFT’s operation character-istics
Horita
Electronic characteriza-tion by semiconductor analyzer (at room T, high T(~ 400K), low T(~ 10K))
Thin film poly-Si, Oxide semiconductor, na-no-dot devices
Electronic properties of TFTs, sensors, solar cells, ferroelec-tric ceramics
Uenuma Horita
Hysteresis-loop meas-urement system for magnetic materials
Ferroelectric ceramics Coercivity, charac-terization of ferro-electric materials
Nishida
Hall-effect measure-ment system (low T (10K) ~
high T (400K))
Thin film poly-Si Oxide semiconductors
Carrier mobility, car-rier density
Horita
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9. List of Members (as of 06/2010)
Name Title
M:Mc. course D:Dc. course
Tel (+81-743-72…)
E-Mail (…@ms.na
ist.jp) Work contents
Bin ZHENG Ph.D.Phys. 6063 zhengbin Lecturer, DNA operation, BNP
Emi MACHIDA Ms.Eng. (D-1st)
6063 m-emi Low T poly Si technology for TFTs
Kazushi FUSE M-2nd 6063 f-kazushi Poly-Si film formation util-ized BNP, for solar cell
Kenshiro ASAHI M-2nd 6063 a-kenshiro PbTiO3 deposition by sputtering
Kentaro KAWANO M-2nd 6063 k-kentaro Re-RAM fabrication through BNP
Kiyoshi UCHIYAMA Ph.D.Eng 0235-25-9096
Moved to Tsuruoka Na-tional College of Tech-nology, as a professor
Koji YAMASAKI M-2nd 6063 y-koji Characterization of double layer type low T poly-Si
Kosuke BUNDO M-1st 6063 b-kosuke Ultra-high speed mobility in Ge-based TFTs
Kosuke OHARA Ms.Eng. (D-2nd)
6063 o-kosuke Floating gate memory device through BNP
Li LU Ms.Eng. (D-1st)
6063 l-li (BaSr)Ta2O6/ZnO films with sol-gel method
Mai TANI M-1st 6063 t-mai Characterization of IGZO- TFTs
Malay ALI Ph.D. 048-8467-4598
Research associate, Bio-nano-technology
Mami FUJII Ms.Eng. (D-2nd)
6063 f-mami Fabrication of characteri-zation of IGZO TFTs
Masahiro HORITA Ph.D.Eng. 6063 horita Lecturer, TFT, EL device fabrication toward flexible display
Masataka NISHIGUCHI
Ms.Eng. (graduated)
N/A N/A Graduated
Min ZHANG M-1st 6063 z-min Electronic devices using nanoimprint process
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Mutsunori UENUMA Ph.D.Eng. 6063 uenuma Lecturer, memory devices utilizing BNP
Ryo ONODERA Ms.Eng. (graduated)
N/A N/A Graduated
Shogo HORIGUCHI M-2nd 6063 h-shogo Enhancement EL intensity in ZnS-based material
Takahiro DOE M-1st 6063 d-takahiro -FeSi2 nano-particles and their devices
Takanori IMAZAWA M-2nd 6063 im-takanoriPoly-Ge film formation by BNP
Takashi NISHIDA Ph.D.Eng. 6063 tnishida Lecturer, ferroelectric ma-terials by sputtering
Takuya KONTANI M-1st 6063 kon-takuyaFlexible inorganic EL dis-play
Tomoki MARUYAMA M-2nd 6063 m-tomoki Analysis of IGZO TFT’s reliability
Yasuaki ISHIKAWA Ph.D.Eng. 6061 yishikawa Associate professor, TFT, solar cell, sensor by printing technology
Yasuhiro KAKIHARA M-1st 6063 k-yasuhiro Novel functionalized de-vice through BNP
Yosuke TOJO Ms.Eng. (D-2nd)
6063 t-yosuke Self-aligned poly-Si films utilizing BNP
Yuichi HORI Ms.Eng. (graduated)
N/A N/A Graduated
Yukiharu URAOKA Ph.D.Eng. 6060 uraoka Professor
Yukiko MORITA 6069 morita Secretary
Yumi KAWAMURA Ms.Eng. (D-1st)
6063 k-yumi ZnO deposition by ALD for TFTs
Yuri ISSE Ms.Eng. (graduated)
N/A N/A Graduated
Yusuke KOBAYASHI Ms.Eng. (graduated)
N/A N/A Graduated
Yuta MIURA M-1st 6063 mi-yuta Fabrication of transparent oxide (ZnO) devices
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10. Site Plan
Address: 8916-5 Takayama-cho, Ikoma, Nara, 630-0192, Japan TEL/FAX: +81-743-72-6069 (secretary)
Access information: http://mswebs.naist.jp/english/access/index.html
IDS (Information Device
Science) Lab