analog cmos design 09(2)
DESCRIPTION
cmos design presentationTRANSCRIPT
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April 16-17, 2009
Etienne SICARD [email protected]
www.etienne-sicard.fr
INSA Toulouse, FRANCE
Analog CMOS Design Analog CMOS Design
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AGENDA
First day : 9h - 12h: Mos Implementation - Inverter
Second Day: 14h - 17h: Basic Cell Design
Second day: 9h - 12h: Mini-project 1/2
Second Day: 14h - 16h: Mini-project 2/2 – Mini presentation
OBJECTIVES
At the end of the course, the auditor will be able to design and simulate
basic analog cells and understand the link between design parameters and
electrical performances.
PRE REQUISITES
Basic knowledge in CMOS technology, electrical circuits and MOS models.
Outlines
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• All notions may be illustrated with Microwind
Microwind is a friendly and free PC tool for designing and simulating microelectronic circuits at layout level.
http://www.microwind.org
Microwind
Version used in 2009: version 3.5 “beta”
Temporary installation permitted
Copying or diffusion prohibited
Lite version free for download at www.microwind.net
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• http://www.etienne-sicard.fr/cours/cmos • Logiciel de conception de circuits micro-électronique • Unzip in “My Documents/Temp”• Open “/system”, double click “Microwind35.exe”• Documentation : click “Livre CMOS de base” ch2 – pp21
Getting Started
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Microwind Main Screen
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Most important icons
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1. MOS Implementation
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Problem 1
• Draw a n-channel MOS
• See the MOS in 2D
• Measure Ion, Ioff
• Simulate the switch (ch2 – pp 21)
• Summarize the n-channel behavior
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Draw a n-channel MOS
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2D section of a n-channel MOS
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Source (Si)
Polysilicon gate
Gate oxide
Horizontal strain created by the silicon nitride capping layer
Drain (Si)
Drain (Si) Source
(Si)
Tensile Strain
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Ion, Ioff
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Ion, Ioff
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Transient Simulation
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Transient Simulation
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N-channel MOS summary
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Draw a p-channel MOS
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2D section of a p-channel MOS
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Compressive Strain
SiGe Si Si SiGe
Gate
Gate oxide
Horizontal pressure created by the uniaxial SiGe strain
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Ion, Ioff
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Ion, Ioff
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Transient Simulation
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P-channel MOS Summary
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Problem 2
• Design a Transmission Gate
• Draw a n-channel + p-channel MOS
• Add “Enable control”
• Simulate the analog switch
• Determine the cut-off frequency
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Interconnect n-diff and p-diff
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Transmission Gate
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Problem 3 – correct design
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Problem 3 – correct design
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Problem 4
• Design a MOS device suitable for Bluetooth output stage
• What ????
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2. Inverter
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Problem 5
• Draw an Inverter (ch4 – pp 3)– Tune the design for symmetrical V/V curve– Delay performances when connected to 1,2, 3
inverters (fanout)
• Draw 3 inverters (ch4 – pp 35)– Try to have the fastest free oscillator
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V/V Static Curve
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Delay vs. Fanout
Delay
Fanout
0 1 2 3
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3. Basic analog cells
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Problem 6 – What is this ?
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Problem 7 – Draw a 10 K resistor
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Problem 8 – Generate a 0.6 V reference, 1µA max
• Use two diode-connected MOS
• Verify DC consumption by – “Voltages and
Currents”– I in log
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Problem 9 – From 1µA, generate 100µA
• Use the current mirror principle
• I(M2) = I(M1) if size identical
• For which Vout range do we have 100µA +/- 10% ?
Vout
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Problem 10 – Amplify with a gain of 10
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Problem 10 – Amplify with a gain of 10
Vout
Vin
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Problem 11 – OpAmp to compare two analog values
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4. Mini-Projects
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5V
0V
1.25V
2.5V
3.75V
Vin
A1
A0
C1
C0
C2
+
+
+
-
-
-Poly resistor
Amplifer used as comparator
Coding Logic
Analog - Digital Converters
5V
2.5V
3.125V
3.75V
4.375V
A0
0.625V
1.25V
1.875V
0V
nA0A1 nA1
Vout
A2 nA2
0
0
1
• 3-bit ?• R/2R ?• C/2C ?• Other type?
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Static Memory
• 4 x 4 ?• 8 x 8 ?• Emulate 256 x 256 ?• Split in 3 sub-projects?
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Other ideas
• Amplifier with programmable gain• Rail-to-rail amplifier• 1.9 GHz amplifier 1 Watt• 2.45 GHz amplifier with sub-sampling to 100 MHz• Phase Lock Loop
– Frequency multiplier
– FM receiver
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Thank you for your attentionThank you for your attention