an automated rf tuner for silicon carbide electronic device processing for power devices and...
TRANSCRIPT
![Page 1: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/1.jpg)
An Automated RF Tuner forSilicon Carbide Electronic Device Processing
for Power Devices and I.C.’sMelissa Spencer, Dept of ECE
EMRL
![Page 2: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/2.jpg)
Reactive Ion Etching
RF energy strikes a plasma which etches the SiC material
Plasma ChemistryPlasma Chemistry
Etch: SF6+He, H2, O2
Ash: O2
RF PowerRF Power
10-100 W typical
PressurePressure
100-600 mT
![Page 3: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/3.jpg)
Problem*
Etch rate is a sensitive function of plasma power
10 Percent power change
20% etch rate variation
*J. Bonds, G. E. Carter, J.B. Casady and J.D. Scofield, Spring MRS Meeting, April 2000
SF6 :O2 (5:10 sccm)Pressure = 100 mTElectrode to sample spacing = 25.4 cm
Power (W) vs Etch rate (A/min)
Etc
h r
ate
(An
gstr
oms/
min
ute
)
Power (W)
1600
1400
1200
1000
800
600
400
200
00 5 10 15 20 25 30 35 40
![Page 4: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/4.jpg)
Impedance MatchingThe load impedance is matched to the source
impedance by a “T” network:
X1 X2
X3
X1, X2 variable capacitors and X3 variable inductanceControl algorithm to minimize PR vs. ZP
PForward
PReflected
RF Source =ZS
ZP
![Page 5: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/5.jpg)
• Maintain a maximum VSWR of 1.1 to 1 source to load match
• Dedicated on-board micro-controller• PC for monitoring the tuning• Manual and Automatic Mode• Operates with a 60 Hz, 120V AC power source • Conforms to FCC emission limits for RF
devices• Packaged in a 19-in. aluminum rack mount
enclosure• Cost not to exceed $1000 dollars
Design Constraints
![Page 6: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/6.jpg)
• Hardware– MFJ Roller Inductor Tuner
– Detection Circuitry for PForward and PReflected
– Basic Stamp II Controller
– Servo Motors (impedance device tuning)
– AC to DC Converter
– A/D Converters
• Software– Impedance Tuning Algorithm
Implementation
![Page 7: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/7.jpg)
System Block Diagram
Monitoring PC
Monitoring PC
Micro-Controller
Micro-Controller
ServoMotor/Driver
ServoMotor/Driver
ServoMotor/Driver
ServoMotor/Driver
ServoMotor/Driver
ServoMotor/Driver
Detection Circuitry for Forward and
Reflected Power
Detection Circuitry for Forward and
Reflected Power
RF inRF in
RF outRF out
Goal: Maintain constant power transfer
MFJ-962D
![Page 8: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/8.jpg)
vcc -cs20 1
7 Vin-
6 Vin+
9 Vref/ 2
ADC0804
7 Vin-
6 Vin+
9 Vref/ 2
ADC0804
vcc20
D3 15
D0 18
D2 16D1 17
D6 12D5 13D4 14
-WR 3-RD 2
D7 11
-intr 5-cs
1
-
+
For Voltageinput
inputRefl Voltage
5V
5V
2k
10k 1uF
1uF
5V
24PWRGND 23RES 22+5V 21P15 20P14 19P13 18P12 17P11 16P10 15P9 14P8 13
56789101112
234
1
P5
P7P6
P4P3P2P1P0
TX
GNDATNRX
Serial
Moto
r 3
Moto
r 2
Moto
r 1
Au
to O
ut p
ut
Au
to I
np
ut
Cable 5V SwitchReset
LM358
LT1029
-intr 5
D6 12
D1 17D0 18
D4 14D3 15D2 16
D5 13
-RD 2
D7 11-WR 3
A/D Driver A/D Stamp
Schematic
![Page 9: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/9.jpg)
Control PC Board
• Control PC Board double-sided to reduce board size -- PC board designed to fit in RF shielded enclosure inside chassis• Board in connected to external sources by connectors• RF Filter Feedthroughs used to eliminate RF noise at Stamp and other control electronics
![Page 10: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/10.jpg)
Servos
Automated RF Tuner
RF Filter Feedthroughs
Capacitors
Power Supply
RF Shielding
Inductor
Detection Circuitry
Servo
Con
trol
Boa
rd
![Page 11: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/11.jpg)
Matching Algorithm
Algorithm utilizes MFJ tuning procedure of varying -inductor, load capacitor, inductor, source capacitor
Vary Impedance
Vary Impedance
?
Detect Reflected
Power
Step Procedure
1 Operator Tunes to a Set Point 2 Auto Mode is set
3 Measures Pforward and Preflected
4 Checks Threshold 5 Varies Tuning if Necessary 6 Repeat as Necessary to maintain VSWR < 1.1 to 1
![Page 12: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/12.jpg)
Functional Tests
RequirementMotor
Control TestSuite
ControlSignalTest
AlgorithmTest
PhysicalPackaging
RIE Run
MatchingAbility
On-boardController
PC Interface
Dual ModeOperation
Power
EMC1 N/A N/A N/A N/A N/A
Packaging
Cost 1 EMC testing does not have to be tested due to this qualification as a scientific instrument .
![Page 13: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/13.jpg)
RIE Test Results
RIE Chamber
Monitoring
PC
Au
tom
ated
RF
T
une
r
Includes: RIE Etching Chamber, Automated RF Tuner, and PC
Results: O2 Plasma
Minimum VSWR Attained
10 W 25 W 50 W400 mT 1.02 to 1 1.04 to 1 1.05 to 1
300 mT 1.03 to 1 1.05 to 1 1.05 to 1
200 mT 1.02 to 1 1.03 to 1 1.04 to 1 (All below a VSWR of 1.1 to 1)
![Page 14: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/14.jpg)
• Maintain a maximum VSWR of 1.1 to 1 source to load match– Tuning Algorithm continuously maintains at least a 1.1 to 1 VSWR
• Dedicated on-board micro-controller, which maintains primary control over the tuning network– PC only has a display function over the tuning
• PC Interface for monitoring the tuning – RF source provide accurate means for measuring the forward and
reflected power
• Manual and Automatic Mode– Tuning algorithm includes both manual and automatic modes of
operation
Design Constraints
![Page 15: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/15.jpg)
• Operates with a 60 Hz, 120V AC power source – On-board power supplies 5 VDC from 120 VAC source
• Conforms to FCC emission limits for RF devices– FCC allows unlimited emission at scientific frequencies
such as 13.56 MHz
• Packaged in a 19-in. aluminum rack mount enclosure– Components were chosen which fit easily in the
existing rack mount• Cost not to exceed $1000 dollars
– Parts total about $850 dollars
Design Constraints cont..
![Page 16: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/16.jpg)
Future Work• Modular Device
– Feedback circuitry can be replace with other detection devices
• Communication with computer– Reflected Power could be compensated with RF source
• Automate other power related parameters– Electrode spacing could be varied automatically to
utilize optimal spacing
![Page 17: An Automated RF Tuner for Silicon Carbide Electronic Device Processing for Power Devices and I.C.’s Melissa Spencer, Dept of ECE EMRL](https://reader035.vdocuments.us/reader035/viewer/2022062519/5697c0071a28abf838cc5d25/html5/thumbnails/17.jpg)
An Automated RF Tuner forSilicon Carbide Electronic Device Processing
for Power Devices and I.C.’sMelissa Spencer, Dept of ECE
EMRL