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Training ProgramAIXTRON Training Center

AIXTRON SE Training Center (Germany)Kaiserstr. 98 · 52134 Herzogenrath · Germany

Training-Center-Germany@aixtron.com

AIXTRON SINANO Demo Lab and Training Center (China)Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou, 215125, P.R. China

Training-Center-China@aixtron.com

Cambridge, UK

Suzhou, China

Sunnyvale CA, USA

AIXTRON

Training Center

Representation

Lund, Sweden

HerzogenrathGermanyHeadquarters

Seoul, South Korea

Tokyo, Japan

Shanghai, China

Hsinchu & Tainan,Taiwan

3

AIXTRON Demo Lab and Training Center ............3

Training overview .......................................................4

Level A – MOCVD-Systems: Basics .......................5

Level B – MOCVD-Systems: Advanced stage .....6

Level C – Principles of MOCVD technology .........7

Level D – In-situ monitoring and ex-situ characterization of epitaxial layer ..........8

Level E – Process tuning ...........................................9

Level F – Device understanding and correlation to epitaxial growth ............ 10

Level G – Fab-automation, MES-interface ...........11

Content

In Germany and their new facilities in Suzhou, AIXTRON will provide customers and interested clients various training options and system demonstrations.

Training� From basic reactor handling to advanced process tuning for device optimization� For operators to advanced process engineers

Demonstration of AIXTRON system performance� G5 HT-TM (confi gurations: 56x2″, 14x4″, 8x6″)� CRIUS® II-XL (confi gurations: 69x2″, 19x4″)

Process development� Customer related process development

Location� Herzogenrath, Germany � Suzhou, China, cooperation with SINANO (Suzhou Institute of Nano-Tech and Nano-Bionics)

AIXTRON Demo Lab and Training Center

4 5

Level

A

B

C

D

E

F

G

Course

MOCVD-Systems: Basics Hardware & Software training, Safety

MOCVD-Systems: Advanced stageMaintenance, Calibration, Troubleshooting

Principles of MOCVD technologyPhysics and Chemistry

In-situ monitoring and ex-situ characterization of epitaxial layer

Process tuning: Planetary systemClose Coupled Showerhead®

Device understanding and correlation to epitaxial growth

Fab-automationMES-interface

Days

5

5

2

5

3-5

2

1

Training overview

Operator

Technician

Process Engineer

Fab-manager

>>> Certifi cate of successful training · handouts of discussed topics

other schedules on request

A

A

A B

B C D E F

G

MOCVD-Systems: BasicsHardware & Software training, Safety

� How to operate the AIXTRON MOCVD systems

� Hardware handling

� Software training (AIXACT®) � Overview and structure � Writing and analyzing recipes

� Safety and handling rules

� Transfer module – Cluster Tool Control (CTC)

� State machine

6 7

B

� Maintenance, preventive maintenance � Extended safety rules during maintenance cycles

� MFC exchange

� Leak test procedures

� Cleaning of reactor parts

� Temperature control and heater test

� Troubleshooting hard- and software

C

� Introduction in MOCVD technology

� MOCVD chemistry and basics of MOCVD technology

� MOCVD reactor design and modeling

� Introduction in epitaxial growth principles

� Epitaxial growth technologies

� State of the art results and future challenges

Temperature

Gro

wth

rat

e Mass Transport

Desorption Kinetic

Principles of MOCVD technologyPhysics and Chemistry

MOCVD-Systems: Advanced stageMaintenance, Calibration, Troubleshooting

8 9

D

� In-situ characterization/monitoring: � Temperature � Wafer bowing � Growth rate and layer properties � Explanation of existing tools

� Ex-situ characterization of epitaxial layer: � Photoluminescence (PL): EtaMax Plato PL mapper � X-ray: Panalytical X’PERT PRO MRD XL � Electrical properties: Nanometrics Hall Effect Measurement System HL5500/5580 � Surface and defects: NIKON ECLIPSE LV150 Microscope

E

� Introduction of simulation � Use simulation results and theory to explain and understand process tuning � Theory on reactor behavior: planetary and showerhead

� Temperature tuning (CCS)

� Layer uniformity tuning (planetary)

� Run-to-run and system-to-system uniformity

� Yield improvement

Process tuningPlanetary Reactor® · Close Coupled Showerhead ®

In-situ monitoring and ex-situ characterization of epitaxial layer

10 11

F G

� LED Device Physics: Technology and Characterization

� Laser

� GaAs-HEMT basics

� Nitride-HEMT

� HFET-principles and upcoming challenges

� Tool Automation � Automated wafer handling � Defect reduction and yield improvement � Throughput � Overall productivity profi tability

� Factory Automation � MES - interface � MES integrated effi cient fab planning and operation � Productivity profi tability

*MES = Manufacturing Execution System

Fab-automationMES-interface*

Device understanding and correlation to epitaxial growth