the 0.15µm gan hemt process...gan technology gh15 gan process is optimized up to 35ghz for high...

GaN TECHNOLOGY

GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity. The Gallium Nitride power density combined with a thermal dissipative SiC substrate brings to 3.5W/mm at 30GHz. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the substrate and two metal layers for interconnections.

GH15 is the ideal process to design:• High power and high PAE amplifiers

up to Ka-band• Robust LNA• High Power switches

Build your own solution with UMSwww.ums-gaas.com

The 0.15µm GaN Hemt process

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Contact us:

Worldwide distributor: Richardson RFPDwww.richardsonrfpd.com

UMS SAS – EMEA,Ph: +33 1 69 86 32 00mktsales@ums-gaas.com

UMS USA, Inc. - America,Ph: +1 781 791 5078philippe.labasse@us.ums-gaas.com

UMS - Asia, Ph: +86 21 6103 1703 xavier.taltasse@ums-gaas.com

www.ums-gaas.com

Process Design Kit (PDK) includes non-linear electro-thermal models, noise model, diodes & switches models, passive models, all with associated library elements.

Applications targeted with GH15:• Pt to Pt radio• 5G• Satcom• Radar• Broadband amplification• Hi-Rel products

Element Typical Value

Vt -3,2 V

Idss 1.2 A/mm

Ids+ 1.4 A/mm

Gm 390 mS/mm

VdsDC 20 V

Ft > 35 GHz

Fmax > 100 GHz

MIM density 175 pF/mm2

Metallic resistors 30 and 1000 Ohms/sq

Via-holes available on 70-µm substrate thickness

Process main features