section i: motivation and introduction

Section I: Motivation and introduction

The technological foundations of most high-tech industries are based primarily on the development/creation and utilization of different kinds of thin films: deposition and patterning.

Outline of the course

Basic thermostatand vacuum tech

sources deposition morphology

Example:Cross section of a computer chip

ILDILD

C o p p e r

C o p p e rSe e d

5 nm

~ 2 m ~ 3 nm

~ 2 nm

0.2 mSchematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits.

Magnetic storage---towards terabits/in2

C. Ross, Annu. Rev. Mater. Res. 2001. 31:203-235.

Three strategies:

• exchange-decoupled grains (conventional)•In-plane patterned media•Perpendicular patterned media

Ha rd d rive sub stra te

Re sista nc e

-+

Fe rro m a g ne t

Pinne d m a g ne t

Fre e m a g ne tUnd e rla ye r(s)

M a g ne tic Film

Sp a c e r la ye r

G M RHe a d

O ve rc o a t la ye r(s)

Illustration of hard disk structure and giant magneto-resistive sensing heads usedfor high density data storage devices.

1

“Photonic bandgap: woodpile structure”(Professor S. Lin, RPI)

MRS: Colvin, MRS Bulletin August, 2001, page 637

Optical switches: •MEMS---mirror switches: D. Bishop et al, Physics Today Oct 2001 (Lucent)

MEMS

Solid state laser: http://www.rpi.edu/futurechips/

Cleland (2003)Industrial Physics (2002)

Mini-machnines (Micromechanical systems): actuator, resonator, valve, damper, motor…. Wu (2002)

Micro-mirror arrays--Lucent (2001)

microns

Physical vapor deposition: thermal evaporation, e-beamevaporation, sputter deposition, laser ablation, ion beam deposition

thicknessmonitor

pump

substrate

source

vapor

Base pressure --vacuum seal, outgasing, contamination, pumpsDeposition rate (nm/s) --source T, vapor pressure, impinging rate Film structure --morphology, crystal orientation, substrate T, uniformity

Chemical vapor deposition: thermal CVD, atomic layer deposition

Ar

H2

Pump

Ar

precursor

Substrate Heater

Pressure, T (source and substrate),flow rate, deposition rate, pulseduration, film properties

NSi(CH3)3

CuCu

N(H3C)3Si

(H3C)3Si

Si(CH3)3

Pd2+

O

OC

CHC

CF3

CF3

-OO

O C

C

CH

CF3

CF3

O-

Solution based deposition: electrochemical deposition (ECD), Electroless deposition (ELD)

Cu2+(EDTA)

SO42-

OH-wafer

glyoxylic acid

- +

Cu2+

e-

SO42-

H+

Cl-wafer anode

electrochemical deposition Electroless deposition(HO2CCH2)2NCH2CH2N(CH2CO2H)2

Room T T~70o

Home work. 1. (Deadline: Sept 7, 8am) Describe briefly five different devices or structures (with figures or drawing) that require extensive thin film coating work. (One page per device.)