ranjeet center for detector & related software technology (cdrst)

Ranjeet Center for Detector & Related Software Technology (CDRST)

Department of Physics and Astrophysics,University of Delhi (DU), Delhi, INDIA

On behalf of Si Sensor Simulation Group

TCAD Simulation of Geometry Variation under HPK campaign

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TCAD Simulation vs. MeasurementActive thickness: 300 mm

3

Simulated Structure (zoomed)

5-STRIP Simulation 5-strip Structure Simulations

We have considered five strips in which Cint is evaluated by sending AC signal to central electrode and measuring it w.r.t. two adjacent strips (which are shorted).

SILVACO

1) Temp = 21 deg C corresponding to 294 K

2) n+ implant of 30 micron from the back side

3) Strip length for normalization = 3.0490 cm

4) Total device depth is 320 micron.

5) Frequency = 1MHz

Simulation Parameters – Same for all 12 configurations

Only Width and Pitch are changed in 12 configurations (according to MSSD design) keeping all other parameters same. 4

SILVACO

Parameter Old Set New Set

1.Substrate Doping Conc. (NB)

3.0x1012 cm-3 2.0x1012 cm-3

Surface Charge Density (QF)

1.0x1011 cm-2 1.0x1011 cm-2

Junction depth 1.5 mm 2.2 mm

FZ320N (Comparison Cint)

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SILVACO

There is a change in curvature but the saturation value is almost same with old & new set of parameters.

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MSSD No-3 MSSD No-11

Pitch = 80

FZ320N (Comparison E. filed)

SILVACOMSSD No-7

The E. Field is showing similar values & behaviour with new set of parameters.Almost similar E.Field with old & new set of parameteres

Old Set New Set

Vbias = 400V

•FZ320N (E Field) Old Set

MSSD No-1

MSSD No-5

MSSD No-9

SILVACO

MSSD No-2

MSSD No-6

MSSD No-10Pitch = 120 Pitch = 240

E Field decreases as the width of the strip implant increases

Vbias = 400V

•FZ320N (E Field) OLD SET

MSSD No-3

MSSD No-7

MSSD No-11

SILVACO

MSSD No-4

MSSD No-8

MSSD No-12Pitch = 80 Pitch = 70

E Field decreases as the width of the strip implant increases

Vbias = 400V

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Simulation of Cint for Multi-SSD with Double P-stops

Instead of two adjacent half- P+ neighbouring strips, we have considered five strips in which Cint is evaluated by sending AC signal to central electrode and measuring it w.r.t. two adjacent strips (which are shorted).

Simulated Structure – zoomed region

Double P-stops 4µm wide separated by 6µm

1) Temp = 21 deg C corresponding to 294 K

2) n+ implant of 30 micron from the back side

3) Strip length for normalization = 3.0490 cm

4) Total device depth is 320 micron

5) For FZ320P, Double P-stop (each 4µm wide separated by 6µm)5) Frequency = 1MHz

Simulation Parameters–Fz320P

Only Width and Pitch are changed in 12 configurations (according to MSSD design) keeping all other parameters same. 10

SILVACO

Parameter Old Set New Set

1.Substrate Doping Conc. (NB)

3.0x1012 cm-3 5.0x1012 cm-3

Surface Charge Density (QF)

3.0x1010 cm-2 3.0x1010 cm-2

Junction depth 1.5 mm 2.2 mm

P-stop peak doping density

5x1016cm-3 4x1015cm-3

P-stop doping depth 1µm 1.6µm

FZ320P (Comparison Cint)

11

SILVACO

There is a change in curvature but the saturation value around 400V is almost same with old & new set of parameters.

12

MSSD No-3 MSSD No-11

Pitch = 80

FZ320P (Comparison E. filed)

SILVACOMSSD No-7

The E. Field is showing similar values & behaviour with new set of parameters.The behaviour of E.field has changed but maximum value is almost same.

Old Set New Set

Vbias = 400V

•FZ320P (E Field) Old Set

MSSD No-1

MSSD No-5

MSSD No-9

SILVACO

MSSD No-2

MSSD No-6

MSSD No-10Pitch = 120 Pitch = 240

E Field decreases as the width of the strip implant increases

Vbias = 400V

•FZ320N (E Field) OLD SET

MSSD No-3

MSSD No-7

MSSD No-11

SILVACO

MSSD No-4

MSSD No-8

MSSD No-12Pitch = 80 Pitch = 70

E Field decreases as the width of the strip implant increases

Vbias = 400V