photoresist spie 2013 · 2015. 8. 5. · photoresists for plating & etching applications -...
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Photoresists For Plating & Etching
Applications - Metal plating - Plasma etching
- Enhanced adhesion to copper - Two functional groups to miximize adhesion to copper and copper oxide
- Enhanced adhesion to gold
Applications - Solder bump plating Copper pillar plating Gold bump plating Copper redistribution plating Properties - Positive tone thick �lm photo resist Cover >50µm thick at ‘Single Coating’ Chemically ampli�ed type: High sensitivity Straight wall angle pattern Good Plating bath resistance Easy to remove by safe solvent
R2
S
SiO
R2
S
SiO
R2
S
SiO
R2
S
SiO
R2
S
SiO
R2
S
SiO
R2
S
SiO
R2
S
SiO
Au Au AuAuAuAuAuAu Au Substrate
Photoresist
R1
A
SiO
R1
S
A
Cu CuO CuCuCuOCu
R1
A
SiO
R1
S
A
Post Photoresist Coating
Post Photoresist Coating
SIPR-9740 on CopperWith and Without PR1P
Photoresist
Cu Substrate
1.5µm L/SFT = 6µm
465 mJ/cm2
1.5µm L/SFT = 6µm
465 mJ/cm2
SIPR-3251 - i-line and broadband sensitive - Positive tone - Novalak-based - 30µm in a single coat - TMAH-developable - Excellent plating resistance - Easily stripped - Custom viscosities available
1.5µm L/SFT = 6µm
465 mJ/cm
Adhesion Promoters
SIPR-7500 Series Photoresists
SIPR-3251 Photoresist
PR20PPR1P
PR1P
Blank(No Primer)
625mJ550mJ
SIPR-9740-6.0 3µmL/S SIPR-9740-6.0 3µmL/S
SIPR-9740-6.0 3µmL/SSIPR-9740-6.0 3µmL/S SIPR-9740-6.0 3µmL/S
SIPR-9740-6.0 3µmL/S
475mJ
Photoresist Materials
Metal Adhesion Promoters
Adhesion Promoters HMDS
MicroPrime HP Primer HMDS
MicroPrime HP Primer (CH3)
3SiNHSi H 3) 3 Ultra- High Purity Grade HDMS Photoresist Adhesion Promoter
MicroPrime MP-90 & 95 HMDS/DEATS Blend
MicroPrime P10 & P20 PGMEA/HMDS Blend
Lithographic Performance at High / FT = 40µm
Resistance against Plating Solution
Cu Plating Performance of SINR-7500W
Resist Film Thickness; 60umVia Size; 60umExposure; Proximity AlignerResist strip : PGMEA Dipping
Sn-Ag Solder plating solutionTS-202 (ISHIHARA Chemical)Condition; 30ºC / Dipping
Resist Film Thickness; 70umVia Size; 60umExposure; Proximity Aligner
Before dipping
Dipped for 120 min.
No Cracks
Conditions; FT ; 40um, Substrate; Si, SB = 130ºC x 120sec., Exposure; NSR-i11 (Nikon)NA = 0.46,σ = 0.38, PEB = 120ºC x 120sec., Dev.; 2.38% TMAH aq., 60sec. Puddle x 6 Times10.0um L/S 800mJ
Focus; 0.0um(Large Size Image)
-4.0um -3.0um -2.0um -1.0um 0.0um +1.0um +2.0um +3.0um +4.0um
Optical Scope CS SEM CS SEM
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