optical lithography, key enabling technology for our modern world

OPTICAL LITHOGRAPHY

KEY ENABLING TECHNOLOGY FOR OUR MODERN WORLD

Dr. Reinhard Voelkel CEO SUSS MicroOptics SA

Switzerland

Invited Talk at DGaO Annual Meeting 2012, Eindhoven, The Netherlands

SUSS MicroOptics is part of the SUSS MicroTec group, formerly known as Karl Suss, supplying lithography tools (mask aligners) since 1963.

SUSS MicroOptics SA, R. Voelkel, Optical Lithography, DGaO 2012, Eindhoven 2

My talk is about îOptical Lithography - Key Enabling Technology for our Modern Worldî What is our Modern World?

OUR MODERN WORLD

Source: www.apple.com

ONLY SOME 10 YEARS AGO

Source: www.wikipedia.org

SUSS MicroOptics SA, R. Voelkel, Optical Lithography, DGaO 2012, Eindhoven

http://www.itrs.net/Links/2011Winter/5_MEMS.pdf

LITHOGRAPHY IS KEY ENABLING TECHNOLOGY

Christopher J. Progler: (CTO Photronics), at SPIE Advanced Litho, San Jose, Feb 2012

128GB MEMORY STICKS

22 nm (half-pitch) lithography

Lithography (Greek: λίθος = lithos, 'stone' + γράφειν = graphein, 'to write')

is a method for printing using a stone (limestone) or a metal plate with a smooth surface.

Invented in 1796 by Bavarian author Johann Alois Senefelder (1771 – 1834) as a cheap method of publishing theatrical works.

Lithography can be used to print text or artwork onto paper or other suitable material.

WIKIPEDIA

JOHANN ALOIS SENEFELDER (1771 – 1834): LITHOGRAPHY

Cheap method to publish his theatrical works?

Paints ink as a resist on flat plates Solnhofen limestone

Limestone is porous (hydrophilic) and absorbs ink => hydrophobic

Gum Arabic solution absorbed at hydrophilic areas, hydrophobic

design repels

Rolling on an ink made of soap, wax, oil and lampblack, this greasy

substance coated the design but did not spread over the moist blank

Senefelder’s invention changed printing industry: Newspapers!

Johann Alois Senefelder

(1771 – 1834)

JOSEPH NICÉPHORE NIÉPCE (1765 – 1833): HELIOGRAPHY

Photosensitive asphalt (bitumen of Judea) as photoresist

Oiled paper with black ink as photomask

Sun-exposure (several hours) hardens the resist

Unexposed soft resist areas dissolved by solvents and removed

Joseph Nicéphore Niépce

(1765 – 1833)

Original engraving by Isaac

Briot (1633)

Niépce’s heliography

(1826)

rait o

inal G

e, arc

Still some more inventions needed to build my Smart Phone...

John Bardeen, William Shockley and Walter Brattain

Nobel Prize in Physics 1956

INVENTION OF THE TRANSISTOR (1947)

Bardeen, Shockley and Brattain

at Bell Labs (1948)

1st transistor invented at Bell Labs by

Bardeen, Shockley and Brattain in 1947 Source: www.computerhistory.org

Bell Labs

Jules Andrus and Walter L. Bond

Carl Frosch and Lincoln Derrick’s silicon diffusion process

DOFL: U.S. Army’s Diamond Ordnance Fuse Laboratories

Jay W. Lathrop and James Nall: First microscope-based “stepper”

Jay W. Lathrop and James Nall invented the name “Photolithography”

PIONEERS OF PHOTOLITHOGRAPHY IN SEMI RESEARCH

Jules Andrus Photoengraving

for PNPN (1957)

Lathrop/Nall: Transistor integrally mount with a printed circuit

plate by thin-film metal strips manufactured by

photolithography and vacuum deposition (1957).

Photoresist!

1935: Louis Minsk at Eastman Kodak developed first negative

photoresist for printed circuit board (PCB) applications

Photoresist adherence was one of the major problems in the

1950s research on transistors

KPR (Kodak PhotoResist) did not stick well on germanium

(HCL-etching) and silicon dioxide (BHF-etching)

Research teams and industry used black or Carnauba wax

In 1960 Kodak released the new KTFR (Kodak Thin Film Resist)

invented by Martin Hepher and Hans Wagner

PHOTORESIST PROBLEMS

Pioneers of photoresist development at Eastman Kodak: (from left) Louis

Minsk, Martin Hepher, Hans Wagner and Armost Reiser

Source: www.computerhistory.org

Integrated Circuits (IC)

Jack S. Kilby from Texas Instruments had the “Monolithic Idea”

to integrate resistors, capacitors and transistors in a single chip.

Kilby filed his patent for an “Integrated Circuit” on Feb 6, 1959.

At the same time Robert Noyce from Fairchild invented the

“Planar Integrated Circuit” and filed his patent on Jul 30, 1959.

After a short patent-war they cross-licensed their patents.

INVENTION OF THE INTEGRATED CIRCUIT (1958)

Jack S. Kilby

(1923 – 2005)

Integrated circuit (IC) built at Texas

Instruments by Jack S. Kilby in 1958

Robert N. Noyce

(1927 - 1990)

Noyce’s integrated circuit (IC) chip as

manufactured by Fairchild in 1961 Source: www.computerhistory.org

Planar Process

Jean Hoerni invented in 1957 the revolutionary “Planar Process”,

still the base of all semiconductor manufacturing today.

Thin SiO2 film was photo structured and etched

Fairchild starts production of planar transistors in 1959

THE PLANAR PROCESS (1957)

Jean Hoerni

(1924 - 1997)

1957 the eight founders left Shockley and founded

Fairchild in Palo Alto

Fundamental inventions like the “Planar Process”

and the “Planar Integrated Circuit” allowed

industrial manufacturing of transistors and ICs

Fairchild licensed their process to other companies

Silicon Valley

Semiconductor equipment manufacturers

Requirement for lithography tools!!!

THE INCREDIBLE FAIRCHILD START-UP

The eight founders of Fairchild in 1960: (from left) Gordon

Moore, Sheldon Roberts, Eugene Kleiner, Robert Noyce,

Victor Grinich, Julius Blank, Jean Hoerni, and Jay Last

Noyce’s integrated circuit (IC) chip as

manufactured by Fairchild in 1961

Jean Hoerni’s planar process as

patented in 1957

1960 – 1980 The Golden Age of Mask Aligner

Mask Aligners Lithography is „Shadow Printing“ Mask illumination using UV light

Resolution is related to the Proximity Gap

LITHOGRAPHY IN 1976

Semiconductor Feature

Sizes (Half-Pitch)

micron

1957 120

1963 30

1971 10

1974 6

1976 3

1982 1.5

1985 1.3

1989 1

Shrinkage in Lithography

In 1959, when computers filled rooms Feynman had the vision to miniaturize

computers and chips towards their physical limits.

”Why can’t we make them (computers) very small, make them of little

wires, little elements - and by little, I mean little. For instance, the

wires should be 10 or 100 atoms in diameter, and the circuits should

be a few thousand angstroms across.”

THERE IS PLENTY OF ROOM AT THE BOTTOM

JACK S. KILBY’S NOBEL PRIZE LECTURE (2000)

Smaller features, lower costs, larger market,

(from Jack S. Kilby’s nobel lecture in 2000)

Jack S. Kilby

(1923 – 2005)

MOORE’S LAW

SHRINKAGE REDUCES ENERGY PER CHIP OPERATION

31 SUSS MicroOptics SA, R. Voelkel, Optical Lithography, DGaO 2012, Eindhoven

THE FUTURE OF SHRINKAGE?

Intel’s 22nm Tri-Gate transistor is a fundamental

change:

37% faster and 50% power reduction

Change from “Sandy Bridge” to “Ivy Bridge” in 2012

INTEL’S 3D TRANSISTORS

source: www.intel.com

Optical lithography made the most important contributions to allow the profitable continuation of Mooreís Law.

However, providing leading-edge lithography tools was always a very challenging and selective business.

Those equipment suppliers who were not able to provide next generation lithography (NGL) were often kicked out of business.

Only the winners who provided the leading-edge lithography tools, achieved good margins and could afford to continue their cost-intensive development of the next generation tool.

But even for winners it was often very difficult to make the right choices regarding the future technology.

MOORE’S LAW AND ITS CONSEQUENCES FOR SUPPLIERS

LITHOGRAPHY IN 1980

Semiconductor Feature

Sizes (Half-Pitch)

micron

1957 120

1963 30

1971 10

1974 6

1976 3

1982 1.5

1985 1.3

1989 1

HISTORIC LITHO TOOL PRICE [US$]

Mask Aligner

Front-End Litho Tool

ASML 1950i

Every 4 years the price doubles

[1970 – 2010]

Scanner and Stepper

SCANNER AND STEPPER

Source: Perkin-Elmer, ASML, Zeiss, Herbert Gross: Handbook of Optical Systems

X-Ray Lithography

1992: SUSS MASK ALIGNER XRS-200 (X-RAY)

Source: www.suss.com

Customized Illumination

CUSTOMIZED ILLUMINATION IN DUV LITHOGRAPHY

Source: www.zeiss.com

ASML/ZEISS ILLUMINATION SYSTEM FOR DUV LITHOGRAPHY

Source: EPFL/IMT, Carl Zeiss SMT GmbH

FLEXRAY ILLUMINATION SYSTEM

Diffractive Optical Elements

MEMS Mirror Arrays

(FlexRay™)

Source: EPFL/IMT, ASML, Carl Zeiss SMT GmbH

SUSS MicroOptics SA is "Preferred Supplier" for Carl Zeiss SMT GmbH

157nm Lithography? Next: Immersion Lithography

Mar 2002: Burn Lin (TSMC) suggested to consider

immersion lithography @SPIE in Santa Clara.

Oct 2003: ASML and IMEC demonstrate feasibility

Jan 2004: Industry shifts from 157nm to immersion

End 2004: Multiple 0.85NA immersion scanners

shipped to (TSMC, IMEC)

2011: ASML NXT:1950i Step and Scan

In-line catadioptric lens design (1.35NA, TWINSCAN)

Resolution 40nm (C-quad), 38nm (dipole), 2.5 nm overlay

FlexRay (customized illumination)

FlexWave (programmable wavefronts)

Reticle Control (heating compensation)

IMMERSION LITHOGRAPHY

SUCCESS STORY

THE FUTURE OF LITHOGRAPHY?

EUV Lithography

EUV LITHOGRAPHY

Source!!

Source: ASML, XTREME

Tricks & Tweaks? Workarounds?

Moore’s Law: Double function every 2 years!

Reduce cost per function

Making chips more powerful for same cost, or

Making chips of a given capability cheaper

Litho Tools: Prices doubles every 4.4 years!

RULE: Cost per function must decrease about 30%

per year - a factor of 2 every two years - to stay on

track!

THE LAWS OF SEMICONDUCTOR INDUSTRY

Source: Chris Mack, www.lithoguru.com

Tricks & Tweaks: Double-Patterning Self-Aligned ...

DOUBLE PATTERNING, MULTIPLE PATTERNING, SELF ALIGNED

Self-aligned spacer

Source: Wikipedia, SPIE

Litho-Etch-Litho-Etch

The End of Shrinkage?

CRUSING SPEED OF COMMERCIAL AIRCRAFT

Source: Chris Mack, www.lithoguru.com

16-CORE CPU?

Source: www.amd.com

Less-Litho-Intensive-Approach?

Yes & More Tricks: 3D Integration 3D IC, 3D Memory

3D INTEGRATION, STACKING

2D Integration 3D Integration

Source: www.yole.fr

MORE 3D INTEGRATION

Source: www.yole.fr

Where is the Mask Aligner?

LITHOGRAPHY FOR LED MANUFACTURING

Market Share LED Exposure ToolsSUSS

Mask Aligner

ASML Stepper

Beta Squareused Perkin Elmer

DNK Aligner

Nikon Used Stepper

Ultratech Stepper

Ushio full-field

EVGMask Aligner

ELS Aligner

China 102 23 3 128

80% 18% 2%

Europe 6 1 1 8

75% 13% 13%

Japan 22 22

Korea 14 9 25 1 2 51

27% 18% 49% 2% 4%

Malaysia 4 1 5

80% 20%

Singapore 20 20

Taiwan 23 75 23 14 9 144

16% 52% 16% 10% 6%

USA 11 11

Worldwide 182 20 2 107 48 14 1 6 9 389

Source: www.yole.fr

MASK ALIGNER 2012

Components End Products End User Equipment

Supplier

Research

Institutes

New Mask Aligner?

Mask Aligner technology changed tremendously over

the last 50 years

Mask Aligners 1963 - 2012

The optics did not for 30 years!

1969: MJB3 1985: MA150 2010: MA200 Compact

NEW: MO EXPOSURE OPTICS®

SELF CALIBRATING MASK ALIGNER ILLUMINATION

Microlens Optical Integrators

Lamp readjustment required

Uniformity change over lamp lifetime

Daily uniformity test required

Variation of illumination light over mask

(angular spectrum)

Illumination technology from Stepper in Mask Aligner

Microlens Integrators for light homogenization

Self-calibrating light source, telecentric illumination

Illumination filter plates allow customized illumination

Source-Mask Optimization (SMO) in Mask Aligner

MO EXPOSURE OPTICS®

Advanced Mask Aligner Lithography (AMALITH) Source: www.suss.com

- Self-calibrating light source

- Source-Mask Optimization (SMO) - Customized Illumination

- Optical Proximity Correction (OPC)

- Full 3D Litho Simulation in LAB software (GenISys)

ADVANCED MASK ALIGNER LITHOGRAPHY

(AMALITH)

Source: www.suss.com, www.genisys-gmbh.com

ENJOY THE MODERN WORLD!

Our Solutions

Set Standards

SUSS MicroOptics SA Rouges-Terres 61

CH-2068 Hauterive

Switzerland

Tel +41-32-564444

Fax +41-32-5664499

info@suss.ch, www.suss.ch

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