mosfet p general purposes
Post on 02-Apr-2018
214 Views
Preview:
TRANSCRIPT
-
7/27/2019 Mosfet p General Purposes
1/3
Diode Protected P-ChannelEnhancement Mode MOSFETGeneral Purpose Amplifier/Switch
3N172 / 3N173
FEATURES
High Input Impedance Diode Protected Gate
ABSOLUTE MAXIMUM RATINGS(TA = 25
oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAGate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10AGate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mAStorage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
CLead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oCPower Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC
NOTE: Stresses above those listed under "Absolute MaximumRatings" may cause permanent damage to the device. These arestress ratings only and functional operation of the device at these orany other conditions above those indicated in the operational sectionsof the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
3N172-73 Hermetic TO-72 -55oC to +150oCX3N172-73 Sorted Chips in Carriers -55oC to +150oC
CORPORATION
PIN CONFIGURATION
TO-72
GD
SC,B
1503Z
DEVICE SCHEMATIC
1
2
0200
3
4
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL PARAMETER3N172 3N173
UNITS TEST CONDITIONSMIN MAX MIN MAX
IGSS Gate Reverse Current-200 -500 pA VGS = -20V
-0.5 -1.0 A TA = +125oC
BVGSS Gate Breakdown Voltage -40 -125 -30 -125
V
ID = -10ABVDSS Drain-Source Breakdown Voltage -40 -30 ID = -10A
BVSDS Source-Drain Breakdown Voltage -40 -30 IS = -10A, VDB = 0
VGS(th) Threshold Voltage-2.0 -5.0 -2.0 -5.0 VDS = VGS, ID = -10A
-2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10A
VGS Gate Source Voltage -3.0 -6.5 -2.5 -6.5 VDS = -15V, ID = -500A
IDSS Zero Gate Voltage Drain Current -0.4 -10nA
VDS = -15V, VGS = 0
ISDS Zero Gate Voltage Source Current -0.4 -10 VSD = -15V, VDB = 0, VGD = 0
rDS(on) Drain Source On Resistance 250 350 ohms VGS = -20V, ID = -100A
ID(on) On Drain Current -5.0 -30 -5.0 -30 mA VDS = -15V, VGS = -10V
-
7/27/2019 Mosfet p General Purposes
2/3
3N172 / 3N173
CORPORATION
SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source
SYMBOL PARAMETER3N172 3N173
UNITS TEST CONDITIONSMIN MAX MIN MAX
| yfs |Magnitude of Small-Signal, Common-Source,Short-Circuit, Forward Transadmittance*
1500 4000 1000 4000 S VDS = -15V, ID = -10mA, f = 1kHz
| yos |Magnitude of Small-Signal, Common-Source,Short-Circuit, Output Admittance*
250 250 S VDS = -15V, ID = -10mA, f = 1kHz
CissSmall-Signal, Common-Source, Short-Circuit,Input Capacitance*
3.5 3.5 pF VDS = -15V, ID = -10mA, f = 1MHz
CrssSmall-Signal, Common-Source, Short-Circuit,Reverse Transfer Capacitance*
1.0 1.0 pF VDS = -15V, ID = -10mA, f = 1MHz
CossSmall-Signal, Common-Source, Short-Circuit,Output Capacitance*
3.0 3.0 pF VDS = -15V, ID = -10mA, f = 1MHz
NOISE CHARACTERISTICS
SYMBOL PARAMETER TYPICAL UNITS TEST CONDITIONS
NF Common-Source Spot Noise Figure 1.0 dB VDS = -15V, ID = -1mA, f = 1kHz, RG = 1M
SWITCHING CHARACTERISTICS TA = 25oC Bulk (substrate) Lead Connected to Source
SYMBOL PARAMETER3N172 3N173
UNITS TEST CONDITIONSMIN MAX MIN MAX
td (on) Turn-On Delay Time* 12 12
ns
VDD = -15V, ID (on) = -10mA
tr Rise Time* 24 24 RG = RL = 1.4k
toff Turn-Off Delay Time* 50 50 See Test Circuit Below
*Registered JEDEC Data
SWITCHING TIME DETAIL
-0V
-1V
-15V
10%50% 50%
90%
90%
10%
PULSE
WIDTH
90%
0210
MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH
INPUT PULSE
riset < 2ns
PULSE WIDTH
riset < 0.2ns
inC
inR
VIN
VOUT
4(on)t
rt
offt
IN-V
> 200ns
< 2.0pF
> 10M
0220
D.U.T.
VDD
RL
VOUTRG
50
VIN
-0.1 -0.5 -1.0 -5.0 -10
SWITCHINGTIS-nSEC
SWITCHING TIMES vs. ON-STATE
DRAIN CURRENT
ON-STATE DRAIN CURRENT - (I D(on) ) - mA
td(on)
rise
toff
G = RL = 1.4KR
VDD = 15V
0230
1000
500
1.0
t
5.0
100
50
10
-
7/27/2019 Mosfet p General Purposes
3/3
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.
http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/
top related