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More Imaging Luc De Mey - CEO - CMOSIS SA
Annual Review / June 28, 2011
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
More Imaging
• CMOSIS: Vision & Mission
• CMOSIS’s Business Concept
• On-Going R&D: More Imaging
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS’s Vision
Image capture is a key technology with ever growing number of
applications.
Specific imaging applications require specific and optimized Image Sensors.
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS’s Mission
Be a leading supplier of Image Sensors optimized for Industrial,
Professional and Scientific Applications.
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS’s Business Model
Development, Qualification, Production and Supply of CMOS Image Sensors
‣ Standard of-the-shelf Sensors
‣ Custom(ised) Sensors
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Markets
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS’s Company Details
• Creation November 16, 2007
• Capital 5.300.000 €
• Investors
– Management and Personnel
– Financial Investors: Capital-E, Vinnof, ING Belgium, ING Activator Fund
• Personnel 35
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Company Details
Facilities Antwerp
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Company Details
Facilities Antwerp
Area: 1100 m2
‣ class 100 cleanroom ‣ 8” and 12“ wafer tester
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS class 100 Clean Room
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS: 25 years of CMOS Image Sensor History
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS’s Team Publications
> 100 man-years of relevant experience
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Patent/Patent Applications
• New CMOS pixel architectures (8-T)
• New on-chip ADC’s
• BSI technology
• CMOS TDI
• Wafer scale imagers
• CMOS binning techniques
• Total: 12 patent families
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS’s Patents - IP
• 12 CMOSIS patents filed in 2009-2010
• 1st patent granted, protecting our column AD converter structure
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Standard Products
Standard Products
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Standard Products
• CMOSIS Machine Vision: CMV
• CMOSIS Low Noise: CLN
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMV2000
CMV12000 CMV4000
CMOSIS Standard Products CMV
• Applications
– Machine Vision - Factory Automation
– Broadcast
– Motion Analysis
– High End Surveillance
– Matrix Code Reading
– Intelligent Traffic Systems - ITS
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Standard Products CMV
TypePixel pitch
µmOptical format FPS Bits Status
300
2000
4000
12000
7,4 1/3” 600 12 Samples August ’11
5,5 2/3”340
75
10
12Production
5,5 1”180
45
10
12Production
5,5∅ 28 mm
APS-like
180
300
350
12
10
8
Samples May ’11
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Standard Products CMV
• Common features – Global pipelined shutter (8-T) – Low FPN
– Digital serial LVDS interface
– Low dark noise
– High electronic shutter efficiency
– Column ADCs
– Integrated sequencer/controller
– 0.18 µm CMOS Image sensor technology
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Standard Products
CMOSIS New CMV12000
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
New CMOSIS CMV12000
• Global pipelined 8T pixel shutter with CDS – Global shutter required in machine vision market – High sensitivity achieved through CDS and high conversion gain
– High shutter efficiency because of pixel architecture
• High speed column ramp ADC architecture
• High resolution with high frame rate – 12 Mpixels
– Fully pipelined readout scheme • Designed for > 300 fps @ 10 bit resolution → I/O speed > 36 GbpsCurrently
ongoing tests show even:
> 400 fps (full frame) @ 10 bit resolution → I/O speed > 50 Gbps
> 1000 fps (HD 2M) @ 10 bit resolution → I/O speed > 25 Gbps
What makes this sensor unique?
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMV12000 Sensor features
Feature
Resolution 4096 x 3072
Pixel size 5.5 µm x 5.5 µm
Max. frame rate 180 fps (12 bit) 300 fps (10 bit) 350 fps (8 bit)
Pixel control Row windowing (up to 32 separate ROIs), sub-sampling, 2x2 binning
Image flipping X and Y mirroring
Output 64 LVDS outputs @ 600 Mbps
Multiplexing To 32, 16, 8, 4 and 2 or 1 output(s)
Sensor output 8 bit, 10 bit, 12 bit
Package Ceramic µPGA package (237 pins)
Power consumption < 2.5 W (full frame, 300 fps, 10 bit)
Technology 0.18 µm CIS 1P4M
Noise < 10/13 e-
Dynamic range > 62/60 dB
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMV12000 Sample image
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMV Standard Products
• CMV2000/4000 à Industry standard à CMOSIS inside
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS CMV2000 Movie
CMV2000, 300fps
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CLN1000 Standard Product - Low Noise
TypePixel pitch
µmOptical format FPS Bits Status
1000 10 1” 20 Analog Samples Available
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CLN1000 Standard Products CLN - Low Noise
Common features
– 4T, dual transfer gate rolling shutter pixel
– Low dark noise: 3,3 e-
– High full well: 99.000 e-
– High linear dynamic range: 89 dB
– 0.18 µm CMOS Image sensor technology
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CLN1000 - Low Noise
• Applications
– Surveillance
– Microscopy
– Diagnostics
– Astronomy
– X-ray
– Fluorescence
– Luminescence
– ...
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Standard Products
Custom Design
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Analysis and Architectural Study
Device Test & Characterization
Detailed Design & Layout
Prototyping
Device Qualification & Production
CMOSIS Custom Design
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Full Custom CIS Projects
Active projects:
‣ 3 Space customers, 5 active projects: ESA, CNES,
‣ >12 Industrial customers
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Customised Standard Products
• Custom packages
• Chip-Scale Packaging
• Custom cover glass: NIR filter, ARC, band-pass filters,
• Integrated Thermo Electric Cooler (TEC)
• Custom color filters
• Back Side Illumination
• ....
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Custom Package
Integrated Thermo Electric Cooler
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Custom Package
Chip-Scale Packaging
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS R&D
More Imaging
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Technology differentiators…
Low noise global shutter pixels
Fast column AD converters
Backside illumination technology
High frame rates High dynamic range
pixels
Thin back-end process
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Core Technologies
• Global shutter pixels with low read noise, high shutter efficiency, and low FPN
• High speed on chip 10/12/14 bit column ADC’s
• Backside Thinning and Illumination
• CMOS Time Delay and Integration (TDI)
• Radiation hardened CIS
• Large area (wafer scale) imagers with high yields (stitching!)
• CIS system-on-a-chip
• Very high frame rate imagers
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Long Term R&D Plan
• Move to more advanced CMOS technologies: 0.110 µm or below
– Smaller pixels
– More complex pixels
– Better electro-optical performance
• On chip image processing electronics > smart imagers
• Improved image sensor performances:
– Lower read noise: ≤1e-
– Increase full well: higher SNR
– High performance ADC: resolution, speed
– ≥ 1 GBit/s LVDS type interfaces
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Long Term R&D Plan
Smaller Technologies
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Global shutter pixel – smaller pixels
8 transistors, 2 source followers, 2 capacitors
Need for smaller optical formats & complex pixels ⇒ smaller technologies
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
The importance of a thin back-end
6 µm pixel
…even for a large pixel
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS moves to smaller technologies…
• First tape-out’s in 110/90 nm/300mm
• Moving to 90/65 nm/300mm
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Excellent quantum efficiency
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Excellent angular response > 95% at 20° angel
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS smaller architectures – 300mm
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS smaller architectures – 300mm
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Long Term R&D Plan
Back Side Illumination
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Backside Illumination – Address Many Challenges
Sensitivity
Dynamic Range
Frame Rate
Resolution
Functionality
Angular Response
Higher QE
Higher sensitivity
More readout lines
No metal blocking
More complex pixels
Smaller pixels
Picture by Dr. Avi Strum, TowerJazz
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
High End Image Sensor Challenges
Sensitivity Dynamic Range Frame Rate
Resolution Functionality Angular Response Picture by Dr. Avi Strum, TowerJazz
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Backside illumination: applications
• Scientific and industrial vision markets – Performance : low noise, high QE
– Large pixels: MTF / cross-talk less problematic
– Monochrome
– Increased UV sensitivity: for inspection, analysis applications, EUV for science/space.
– Global shutter, without degradation of noise and PLS in BSI
– Performance: low dark current, good read noise
Our developments focuses on this area
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
FSI & BSI CMV4000 4 Mpixel – 180 fps
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
FSI & BSI CMV2000 2.2 Mpixel 340 fps
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
• Development on CMOSIS CMV2000 / CMV4000te (EUV),
• Excellent PLS: 1/20,000 – best in world for BSI global shutter sensor
• Not (only) for visible light QE improvement – Extension of sensitivity to UV, EUV, electron detection
CMOSIS Back Side Illumination
Frontside CMV2000 with µlens Backside CMV2000
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Backside illumination: quantum efficiency
+ improvement of yield (hot clusters)
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Cause of low sensitivity in blue & UV
Dead-zone below 450nm caused by pre-doped profile out-diffusing during CMOS processing.
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
Solutions to enhance blue response
Get rid of the dead zone through either:
1. Backside implant + (laser) anneal with Excico Laser
2. Further etching of the silicon
3. Deposition of a layer with fixed negative charge (Sapphire Al2O3)
4. A combination of 2 & 3
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
QE – further etch improves QE again
57
Some improvement in blue but not good enough yet
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS BSI Flow
Start material: SOI wafer specific doping profile!
Wafer processing: !0.18 µm CMOS!
Wafer bonding!(adhesive or ox-ox)!
Backside implant!
Laser anneal!
Pad opening!
Packaging (assembly)!
Wafer test! AR coating (+CFA, …)!
Final test!
Thinning - stop on BOX!
Silicon etch!
Al2O deposition!
BOX etch!
CMOSIS Proprietary Flow
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Long Term R&D Plan
> High Dynamic Range
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
More dynamic range with 2 transfer gates
Pixel with 2 floating diffusions – First transfer to smallest FD
High gain for dark signals
– Second transfer of remaining photocharges to larger FD
low gain for bright signals
– 2 outputs per pixel
– Simplification: select which FD to use based upon required gain.
TX1
TX2
FD2
PPD
FD1
Cfd1 << Cfd2
TX2 TX1 PPD_P
PPD_N FD2 FD1
P-‐epi
illumination
Out
image1
image2
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CLN1000 - 70 dB + 70 dB = 90 dB
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CLN1000 CHARACTERIZATION TABLE
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CLN1000 SENSOR FUNCTIONALITY
LOW GAIN CHANNEL HIGH GAIN CHANNEL
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
High Dynamic Range & BSI
• BSI version:
! Fully functional
! SOI start material: 3um epi
! Customized post-processing
! Buried oxide (BOX) remove
! Excellent QE in UV
• Future development
! Digital out (on-chip column-level ADC)
! Timing on-chip
! Full product
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
QE – 10 µm pixel, 3 µm thickness BSI
UV sensitivity
© copyright 2011– CMOSIS SA Annual Review / June 28, 2011
CMOSIS Manufacturing Flow – Fabs:
- 180nm
- 110/90nm - 90/65nm
- 180nm
- 180nm
- 180nm
More Imaging Luc De Mey - CEO - CMOSIS SA
Annual Review / June 28, 2011
Thanks' for your attention!
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