mitsubishi j1-series 650v · mitsubishi, with its new j1-series propose a family of power modules...
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©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 1
22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr
Mitsubishi J1-Series 650V High power modules for AutomotivePower Semiconductor report by Elena Barbarini October 2018 – sample
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 2
TABLE of CONTENT
Overview / Introduction 4
o Executive Summary
o Reverse Costing Methodology
Company Profile 12
o Mitsubishi
o Product portfolio
Physical Analysis 16
o Synthesis of the Physical Analysis
o CT600CJ1A060 & CT1000CJ1B060
o Package analysis
Package opening
Package Cross-Section
o IGBT Die
IGBT Die View & Dimensions
IGBT Die Process
IGBT Die Cross-Section
Gen 6th vs Gen 7th CSTBT
o Diode Die
Diode Die View & Dimensions
Diode Die Process
Diode Die Cross-Section
Standard vs RFC diode
Manufacturing Process 126
o IGBT Front-End Process
o IGBT Fabrication Unit
o Diode Die Front-End Process
o Diode Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 138
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o CT600CJ1A060 & CT1000CJ1B060
o IGBT die
IGBT Front-End Cost
IGBT Die Probe Test, Thinning & Dicing
IGBT Wafer Cost
IGBT Die Cost
o Diode die
Diode Front-End Cost
Diode Die Probe Test, Thinning & Dicing
Diode Wafer Cost
Diode Die Cost
o Complete Module
Packaging Cost
Final Test Cost
Component Cost
Price Analysis 162
o Estimation of selling price
Comparison 166
o Comparison with Infineon HybdridPack Drive
o Comparison with Tesla SiC module
Feedbacks 174
Company services 175
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 3
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Executive Summary
The market for power module devices will have a 10.2% compound annual growth rate (CAGR) over the next five years. This will impact the power module packaging market, which will see a 9.5% CAGR, reaching a value of almost $1.8B.
Power modules have come a long way since the early stages of car electrification. They are now playing a key role in the power modulation through all EV/HEVs, from inverters to bi-directional converters. Packaging these modules has become critical due to several technical aspects: eg. moulding, high temperatures die attach, TIM, connections. They must combine good thermal and electrical efficiency while keeping low mass and volume. Also, to remain competitive in an open market, power module makers must deliver high reliability while remaining cost efficient.
Mitsubishi, with its new J1-series propose a family of power modules with voltages in the range of 650V and 1200V with a new direct cooling system for automotive applications. These modules are extra compact with ŘƛNJŜŎǘπŎƻƻƭƛƴƎ ǎdzōǎǘNJŀǘŜ 6-in-1 package with pin fin.¢ƘŜ modules integrate the latest Mitsubishi’IGBT with Gen7 CSTBT technology and the latest RFC diodes.
System Plus Consulting present a technology and cost analysis of two J1-series power modules with 650V and respectively 600A and 1000A, the CT600CJ1A060 and the CT1000CJ1B060. The report provides insights into their structure, technical choices, design, processes, supply chain positions and costs.
This report includes an analysis of the packaging and the IGBT and Diode die along with a cost analysis for all devices. It proposes also a complete comparison between the latest generations of Mitsubishi IGBT and diode. Finally, we compare the module with the technical choices of Infineon HybridPACK drive and the molded Tesla Power molded with ST SiC MOSFET.
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 4
Overview / Introduction
Company Profile & Supply Chain o Mitsubishi Profileo Mitsubishi Product
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
J1 series 650V
Analysed devices
• Extra-compact, direct-cooling 6-in-1 package with cooling fin.• Inverter power-loss reduction and high reliability supported by 7th-generation IGBT chip applied CSTBT1 TM technology.• Application: EV & HEV• High reliability inverter• Low power loss 7th-generation IGBT chip applied CSTBT1 TM technology.• High reliability DLB2 structure• Direct cooling package with cooling fin• Compact, light-weight, high-power-density module• 6-switching elements per package (6-in-1, insulated type)• Built-in on-chip temperature sensor• Built-in on-chip current sensor for SC protection• Compliant with the Restriction of the use of certain Hazardous Substances in electrical and electronic equipment (RoHS) directive 2011/65/EU.
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 5
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Package dimensions
o {dzōǎǘNJŀǘŜ pin fin size: xxx x xxx mm
o {dzōǎǘNJŀǘŜ weight: xxxx
Package Tilted view
Package Back tilted view
nut
clips
P collector
The substrate is clipped to the plastic case and then themodules is fixed with epoxy resin
Direct potting resin
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 6
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Package opening
Package Opening
o The module is composed of six switch, each one containing xxx IGBT and xxx diode
The leadframes areinserted in the plasticcase
W
P Collector
VN Emitter
U
DLB: direct leadbonding
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 7
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
DLB Connections
DLB Connections
DLB Connections
Around the IGBT there are small holesin the upper Al layer of the substrate
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 8
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
xxx
mm
IGBT die dimensions
IGBT Die – Optical view
o Die dimensions:xxxmm² (1xxxmm x xxxmm)
o The mask marking is 687
xxx mm
gate
Emitter
Emitter
Marking– Optical view
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 9
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Die process Edge Termination
Transistor cross section – SEM View Transistor cross section – SEM View
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 10
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Die emitter design
Transistor design– SEM View
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 11
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Comparison between CSTBT 6th Gen & 7th Gen
Mitsubishi Gen 6th CSTBT
MOSFET Voltage Current Die Area Current density Jc Eoff Vce sat FOM Jc/(Vce*Eoff)
6th gen 1200V xx xxx xxx xxx xxx xxx
7th gen 650V xxx xxx xxx xxx xxx xxx
Mitsubishi Gen 7th CSTBT
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 12
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
xxx
mm
Diode die Dimensions
Diode Die – Optical view
o Die dimensions: xxx mm² (xxxmm x xxxmm)
o Marking: E88
xxx mm
Diode Die – Marking
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 13
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Die cross section
Die cross section – SEM View Die cross section – SEM View
o Al layer thickness: xxxµm
Polyimide
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 14
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Package dimensions
o {dzōǎǘNJŀǘŜ pin fin size: xxx x xxx mm
o {dzōǎǘNJŀǘŜ weight: xxx g
o Resin weight: xxxg
Package Tilted view
nut
clips
The subastrate is clipped to theplastic case and then the modules is is fixed with epoxy resin
P Collector
N Emitter
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 15
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Wire bonding
Wire Bonding:
o xxxwire.
o Diameter: xxx µm.
o Medium length: xxx mm
o Total amount of wires: xxx
Wire bonding
X ray view
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 16
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso CT600CJ1A060
o Packageo IGBTo Diode
o CT1000CJ1B060o Packageo IGBTo Diode
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Heatsink Cross-Section
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 17
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo Die Fab Unito Die Process Flowo Packaging Fab Unito Packaging Process flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Dies Overview
IGBT Front End process:
o Substrate: xxx-inch (xxxmm) Silicon
o Process type: Trench gate, HV IGBT
o Metal layers: Al metal layer + metallization on the back side
Test:
o Test type: Wafer sort (Probe test)
Diode Front End process:
o Substrate: xxx-inch (xxxxmm) Silicon
o Process type: Planar
o Metal layers: Al metal layer + metallization on the back side
Test:
o Test type: Wafer sort (Probe test)
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 18
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo Die Fab Unito Die Process Flowo Packaging Fab Unito Packaging Process flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
IGBT Process Flow
IGBT Wafer Process:
o The manufacturing of the IGBT begins with the epitaxy, the implantation and the trench etching. Then the oxide layers and the polysilicon are deposited and patterned. Then the aluminum layer is deposited. Finally a thin passivation layer is reported.
o The wafer is thinned to have a final thickness of xxxµm. Finally, the metal layers on the backside are deposited.
o A polyimide protection layer is deposited on the guard ring.
IGBT Structure Schematic
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 19
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Related Reports
About System Plus
IGBT Front-End Cost
The front-end cost ranges from $xxx to $xxx according toyield variations.
The main part of the wafer cost is due to the xxxx(xxx%).
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 20
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Related Reports
About System Plus
Diode Front-End Cost
The front-end cost ranges from $xxx to $xxx according toyield variations.
The main part of the wafer cost is due to the xxx (xxx%).
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 21
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Related Reports
About System Plus
Diode Wafer Cost per process steps
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 22
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Related Reports
About System Plus
Diode Die Cost
The diode die cost ranges from $xxx to $xxx according toyield variations.
The Front-end manufacturing represents xxx% of thecomponent cost (medium yield estimation).
Probe test, dicing and scrap account for xx% of thecomponent cost.
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 23
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Related Reports
About System Plus
Packaging Cost
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 24
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
About System Plus
Estimated Manufacturer Price CT600CJ1A060
The module manufacturing cost ranges from$xxx to $xxx according to yield variations.
By taking into account a gross margin of xxx%the module selling price is estimated to rangefrom $xxx to $xxx according to yield variations.
©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 25
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Related Reports
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©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 26
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©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 27
Overview / Introduction
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Selling Price Analysis
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©2018 by System Plus Consulting | Mitsubishi 650V J1-Series 28
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
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