measurement of the latest tesla wafers at udine

Measurement of the latest Tesla wafers at Udine

Summary by Diego Cauz

on behalf of the Udine Group

12th February 2003

2

New Tesla wafers

• We have received 4 Tesla wafers from 2 batches in February:

• 8414-14, 8414-16, 8697-04, 8697-10

Visual inspection (VIS) February

• 8414-14 4-4 4-4 4-4 4-4

correct

• 8414-16 4-4 4-4 4-4 4-4

correct

• 8697-04 4-4 4-4 4-4 4-4

correct

• 8697-10 4-4 4-4 4-4 4-4

correct

mask align (H-V) ID marking Wafer n-side L n-side R p-side L p-side R

Legenda:-“4” means that the 4th vernier (ME-PASS) has problems, specifically the passivation part.-Normal face means lines are bad-Boldface means very bad lines (as sampled on thenext two slides) or lines missing altogether.

4

Wafer 8697-104th pair, horizontal

5

Wafer 8697-104th pair, vertical

6

I-V on diode w/ guard ring (IVD)

• 8414-14 5002.73

• 8414-16 5005.78

• 8697-04 5005.29

• 8697-10 5003.16

Wafer Vbd (V) Iop (nA)

Iop = I(Vop)

February

Vbd = max V(I < 25 nA)

7

C-V on diode w/ guard ring (CVD)

• 8414-14 100 3.6 150 2207

• 8414-16 90 3.7 150 2414

• 8697-04 105 3.7 155 2045

• 8697-10 105 3.7 155 2090

Wafer Vdep Cdep Vop (V) (pF) (V) ( cm)

30 < Vdep (V) < 120 2000 < ( cm) < 5000

Vdep = V(kink in C-V curve)

Cdep = C(Vdep)

Vop = max(150 V, Vdep + 50 V)

February

8

I-V on tiles

• 8414-14 70 500 500 - 1.06 1.06 2

• 8414-16 500 500 490 1.09 1.05 1.05 3

• 8697-04 10 500 500 - 1.05 1.05 2

• 8697-10 60 500 500 - 1.04 1.07 2

Wafer Vbd (V) S good tiles

Vbd > Vop S = I(Vop) / I(Vop-50) < 2

February

9

I-V on SC’s: percent yieldVbd > Vop S = I(Vop) / I(Vop-50) < 2

Wafer good/total

February

• 8414-14 5/6

• 8414-16 6/6

• 8697-04 6/6

• 8697-10 5/6

Total: 91.7 %

10

I-V on MC’s: percent yield

• 8414-14 4/4

• 8414-16 4/4

• 8697-04 4/4

• 8697-10 4/4

Vbd > Vop S = I(Vop) / I(Vop-50) < 2

Wafer good/total

February

Total: 100 %

11

I-t on good tiles (ITS)

• 8414-14-02 1.1

• 8697-10-02 1.05

Wafer-tile S

S = Iend / Istart < 1.3

February

12

I-V on MOS (BOX)

• 8414-14 100 8

• 8414-16 100 8

• 8697-04 100 8

• 8697-10 100 8

Vbd > 50 V

Wafer Vbd (V) delay (s)

regular delay = 2 sVbd = max V(I < 100 pA) > 50 V

February

But funny shapes in three over four cases: see next slide

0 20 40 60 80 100

0.0

10.0p

20.0p

30.0p

40.0p

50.0p

reverse Bias (V)

Cur

rent

(A)

BOX measurementTesla 8697-10, OTS 23

8-s delay

0 20 40 60 80 100

0.0

5.0p

10.0p

15.0p

20.0p

25.0p

30.0p

35.0p

reverse Bias (V)

Cur

rent

(A)

BOX measurementTesla 8697-04, OTS 23

8-s delay

The test is passed, but the shapeis not very nice

14

C-V on MOS (COX)

• 8414-14 278 5.1 53.1 4

• 8414-16 273 5.5 62.6 4

• 8697-04 274 5.2 54.5 4

• 8697-10 269 5.2 53.8 4

Wafer Cox (pF) Cmin (pF) CFB (pF) VFB (V)

Cox = Cmax VFB = V(C nearest to CFB)

February

15

I-V on gate-controlled diode (IVG)

Itop = I(VFB +3 V) Ibot = I(VFB – 3 V)

• 8414-14 282 24.3 258

• 8414-16 862 53.8 808

• 8697-04 414 17.7 369

• 8697-10 482 15.0 467

Wafer Itop (pA) Ibot (pA) Iox(pA)

February

16

I-V on MOSFET (MFE)Wafer Vth p dose

(V) (1012 cm-2)

• 8414-14 30 2.95

• 8414-16 30 2.90

• 8697-04 30 2.91

• 8697-10 30 2.85

2.2 < p (1012 cm-2) < 3.5

February

Vth = max V(I < 100 nA) > 0

But funny shapes in twoe over four cases: see next slide

-10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160-7.0µ

-6.0µ

-5.0µ

-4.0µ

-3.0µ

-2.0µ

-1.0µ

0.0

1.0µ

2.0µ

3.0µ

4.0µ

5.0µ

Gate Bias (V)

Sou

rce

Cur

rent

(A)

MFE measurementTesla 8414-16, MOSFET # 26

-10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160

-14.0µ

-12.0µ

-10.0µ

-8.0µ

-6.0µ

-4.0µ

-2.0µ

0.0

2.0µ

Gate Bias (V)

Sou

rce

Cur

rent

(A)

MFE measurementTesla 8697-10, MOSFET # 26

The test is passed, but there isthat funny spike

18

Vpix-V on punch-thru structure (PUT)

Wafer Vpt (V)

• 8414-14 2.92

• 8414-16 2.08

• 8697-04 2.35

• 8697-10 2.50

Vpt = Vpix(Vop) > 3 V

February

19

Planarity measurement (PLA)

• 8414-14 8.4

• 8414-16 11.8

• 8697-04 9.0

• 8697-10 25.5

February

Wafer aplanarity (m)

A < 40 m

20

Conclusions

• Generally the measurements are good, with the following exceptions:– VIS: the passivation lines of the 4th verniers in

the mask alignment pad are very poorly done.– BOX, MFE: funny shape of the data.– PUT: punch-through voltage is less than 3 V,

but this can be due to the known problems we have with this measurement.