ma-n 400 and ma-n 1400 photoresist for lift-off process
Post on 11-Feb-2022
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ma-N 400 and ma-N 1400 Photoresists
for Lift-Off Process
ma-N 400 and ma-N 1400 Photoresists
for Lift-Off Process
micro resisttechnology
300 325 350 375 400 425 450
Abso
rbance
Wavelength [nm]
2000 3000 4000 5000 60000
2
4
6
8
film
thic
kness
[µm
]
spin speed [rpm]
ma-N 490ma-N 440ma-N 420ma-N 410ma-N 405
2000 3000 4000 5000 6000
0,5
1,0
1,5
2,0
2,5
3,0
film
thickness[µm]
spin speed [rpm]
ma-N1420ma-N1410ma-N1407
300 325 350 375 400 425 450
Abso
rbance
Wavelength [nm]
300 350 400 450 500
-2
-1
0
1
2
3
4
5
6
Dill
[µm
-1]
wavelength [nm]
B-Value
A-Value
300 350 400 450 500
-2
0
2
4
6
Dill[µm
-1]
wavelength [nm]
B-ValueA-Value
The ma-N 400 and ma-N 1400 are an innovation in negative tone photoresists for flexible use for proximity and contact exposure. Fullapplication compatibility with processing of conventional positive tone photoresists is guaranteed. Adjustable negative sidewalls can becreated by a simple lithographic process. The generation of more than 1000 nm metal structures by the lift-off process is achievable.
Physical Properties
Coat
Expose
Develop
Evaporate
Lift-Off
Photoresist
Substrate
Mask
Photoresist
Metal
Fast Lift-Off Process withma-N 400 or 1400
Advantages
• full compatible to thepositive tone type
• simple process• high etch resistance• easy to lift-off• easy to remove• high reproducibility
Resist Patterning
These negative tone photoresists are sensitive in the UV 300 and UV 400 range which is essentialfor the preparation of submicron geometries. Because of the easy handling of manufacture ofundercut pattern profiles these photoresists are favoured for the lift-off technique. The undercut isadjusted by exposure dose and developing process. The resist is developed with aqueous-alkaline developer. Due to their etching resistance in the plasma etching process as well as inacidic and alkaline wet-chemical etching, these negative tone resists have a sufficient galvanicstability in acidic and alkaline electrolytic bathes. The process is full compatible to the positive tonetype.
Conventional Lift-Off Processwith two Positive Resists
Coat
Flood Exposure
Coat
Expose
Develop
Evaporate
Lift-Off
PhotoresistSubstrate
ImagingResist
Mask
Metal
Resist thickness: 2 µm Resist thickness: 4 µm Resist thickness: 9 µm
Resist thickness: 9 µm Deposited silver on a resist pattern Deposited silver
ma-N 400
ma-N 1400
Spin curves
UV sensitivity
Dill Parameters
Spin curves
UV sensitivity
Dill Parameters
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