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Absolute Maximum Ratings (Per Die)Parameter N-Channel P-Channel Units
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current 0.68 -0.68
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current 0.4 -0.4
IDM Pulsed Drain Current ➀ 2.72➀ -2.72➄
PD @ TC = 25°C Max. Power Dissipation 14 14 W
Linear Derating Factor 0.011 0.011 W/°C
VGS Gate-to-Source Voltage ±20 ±20 V
EAS Single Pulse Avalanche Energy 64➁ 110➅ mJ
IAR Avalanche Current ➀ — — A
EAR Repetitive Avalanche Energy ➀ — — mJ
dv/dt Peak Diode Recovery dv/dt 20➂ 27⑦ V/nsTJ Operating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)Weight 1.3 (Typical) g
Pre-Irradiation
oC
A
04/17/02
www.irf.com 1
Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6Ω 0.68A N IRFG5210 1.6Ω -0.68A P
For footnotes refer to the last page
MO-036AB
IRFG5210200V, Combination 2N-2P-CHANNEL
HEXFET® MOSFET TECHNOLOGY
PD - 91664B
POWER MOSFETTHRU-HOLE (MO-036AB)
HEXFET® MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state resis-tance combined with high transconductance. HEXFET tran-sistors also feature all of the well-established advantagesof MOSFETs, such as voltage control, very fast switching,ease of paralleling and electrical parameter temperaturestability. They are well-suited for applications such as switch-ing power supplies, motor controls, inverters, choppers,audio amplifiers, high energy pulse circuits, and virtuallyany application where high reliability is required. TheHEXFET transistor’s totally isolated package eliminates theneed for additional isolating material between the deviceand the heatsink. This improves thermal efficiency andreduces drain capacitance.
Features:
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
2 www.irf.com
IRFG5210
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — 0.63ISM Pulse Source Current (Body Diode) ➀ — — 2.5VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 0.68A, VGS = 0V ➃trr Reverse Recovery Time — — 110 nS Tj = 25°C, IF = 0.68A, di/dt ≤ 100A/µsQRR Reverse Recovery Charge — — 310 nC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage 200 — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0mAVoltage
RDS(on) Static Drain-to-Source On-State — — 1.6 VGS = 10V, ID = 0.4AResistance — — 1.83 VGS = 10V, ID = 0.68A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 0.25mAgfs Forward Transconductance 0.54 — S ( ) VDS > 15V, IDS = 0.4A ➃IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V, VGS= 0V
— — 250 VDS = 160V,VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20VIGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20VQg Total Gate Charge — — 9.5 VGS =10V, ID = 0.68A,Qgs Gate-to-Source Charge — — 1.4 nC VDS = 100VQgd Gate-to-Drain (‘Miller’) Charge — — 4.3td(on) Turn-On Delay Time — — 8.7 VDD = 100V, ID = 0.68A,tr Rise Time — — 2.4 VGS =10V, RG = 7.5Ωtd(off) Turn-Off Delay Time — — 19tf Fall Time — — 24LS + LD Total Inductance — 10 — .
Ciss Input Capacitance — 140 — VGS = 0V, VDS = 25V Coss Output Capacitance — 56 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 14 —
nA
Ω
➃
nH
ns
µA
Ω
Thermal Resistance (Per Die)Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 17RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
—
—
Note: Corresponding Spice and Saber models are available on the G&S Website.
Measured from drain lead (6mm/0.25in. from package) to sourcelead (6mm/0.25in. from package)
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IRFG5210
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — -0.61ISM Pulse Source Current (Body Diode) ➀ — — -2.4VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS = -0.68A, VGS = 0V ➃trr Reverse Recovery Time — — 120 nS Tj = 25°C, IF = -0.68A, di/dt ≤ -100A/µsQRR Reverse Recovery Charge — — 420 nC VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance (Per Die)Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 17RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0mAVoltage
RDS(on) Static Drain-to-Source On-State — — 1.6 VGS = -10V, ID = -0.4AResistance — — 1.83 VGS = -10V, ID =- 0.68A
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -0.25mAgfs Forward Transconductance 0.64 — — S ( ) VDS > -15V, IDS = -0.4A ➃IDSS Zero Gate Voltage Drain Current — — -25 VDS= -160V, VGS= 0V
— — -250 VDS = -160V,VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = - 20VIGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20VQg Total Gate Charge — — 18 VGS = -10V, ID = -0.68A,Qgs Gate-to-Source Charge — — 2.8 nC VDS = -100VQgd Gate-to-Drain (‘Miller’) Charge — — 8.4td(on) Turn-On Delay Time — — 15 VDD = -100V, ID = -0.68A,tr Rise Time — — 11 VGS = -10V, RG = 7.5Ωtd(off) Turn-Off Delay Time — — 36tf Fall Time — — 43LS + LD Total Inductance — 10 —
Ciss Input Capacitance — 320 — VGS = 0V, VDS = -25V Coss Output Capacitance — 110 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 20 —
nA
Ω
➃
nH
ns
µA
Ω
Measured from drain lead (6mm/0.25in. from package) to sourcelead (6mm/0.25in. from package)
4 www.irf.com
IRFG5210
Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
N-Channel Q1,Q3
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTHT = 25 CJ °
TOP
BOTTOM
VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V
V , Drain-to-Source Voltage (V)
I
, D
rain
-to-
Sou
rce
Cur
rent
(A
)
DS
D
4.5V
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTHT = 150 CJ °
TOP
BOTTOM
VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V
V , Drain-to-Source Voltage (V)
I
, D
rain
-to-
Sou
rce
Cur
rent
(A
)
DS
D
4.5V
0.1
1
10
4 5 6 7
V = 50V20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I
, D
rain
-to-
Sou
rce
Cur
rent
(A
)
GS
D
T = 150 CJ °
T = 25 CJ °
-60 -40 -20 0 20 40 60 80 100 120 140 1600.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
,
Dra
in-t
o-S
ourc
e O
n R
esis
tanc
e(N
orm
aliz
ed)
J
DS
(on)
°
V =
I =
GS
D
12V
0.68A
10V
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IRFG5210
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
N-Channel Q1,Q3
1 10 1000
60
120
180
240
300
V , Drain-to-Source Voltage (V)
C,
Cap
acita
nce
(pF
)
DS
VCCC
====
0V,CCC
f = 1MHz+ C
+ C
C SHORTEDGSiss gs gd , dsrss gdoss ds gd
Ciss
Coss
Crss
0 2 4 6 8 100
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
Gat
e-to
-Sou
rce
Vol
tage
(V
)
G
GS
FOR TEST CIRCUITSEE FIGURE
I =D
16
0.68A
V = 40VDS
V = 100VDS
V = 160VDS
0.1
1
10
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I
,
Rev
erse
Dra
in C
urre
nt (
A)
SD
SD
V = 0 V GS
T = 25 CJ °
T = 150 CJ °
0.1
1
10
0.1 1 10 100 1000
OPERATION IN THIS AREA LIMITEDBY RDS(on)
Single Pulse T T
= 150 C= 25 C°
°JC
V , Drain-to-Source Voltage (V)
I
, D
rain
Cur
rent
(A
)I
,
Dra
in C
urre
nt (
A)
DS
D
100us
1ms
10ms
13a & b
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IRFG5210
Fig 10a. Switching Time Test Circuit
VDS
90%
10%VGS
td(on) tr td(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.Case Temperature
N-Channel Q1,Q3
VGS
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Notes:1. Duty factor D = t / t2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
The
rmal
Res
pons
e(Z
)
1
thJA
0.010.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE(THERMAL RESPONSE)
25 50 75 100 125 1500.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
T , Case Temperature ( C)
I
, D
rain
Cur
rent
(A
)
°C
D
www.irf.com 7
IRFG5210
QG
QGS QGD
VG
Charge
D.U.T.VDS
IDIG
3mA
VGS
.3µF
50KΩ
.2µF12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+
-10 V
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (B R )D S S
IA S
R G
IA S
0 .01Ωtp
D .U .T
LV D S
+- VD D
DR IVE R
A
15V
20V
N-Channel Q1,Q3
.
VGS
25 50 75 100 125 1500
30
60
90
120
150
Starting T , Junction Temperature ( C)
E
,
Sin
gle
Pul
se A
vala
nche
Ene
rgy
(mJ)
J
AS
°
IDTOP
BOTTOM
0.30A 0.43A 0.68A
10V
8 www.irf.com
IRFG5210
Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
P-Channel Q2,Q4
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTHT = 150 CJ °
TOP
BOTTOM
VGS-15V-10V-8.0V-7.0V-6.0V-5.5V-5.0V-4.5V
-V , Drain-to-Source Voltage (V)
-I
,
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
DS
D
-4.5V
0.1
1
10
4 5 6 7
V = -50V20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I
,
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
GS
D
T = 25 CJ °
T = 150 CJ °
-60 -40 -20 0 20 40 60 80 100 120 140 1600.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R
,
Dra
in-t
o-S
ourc
e O
n R
esis
tanc
e(N
orm
aliz
ed)
J
DS
(on)
°
V =
I =
GS
D
-12V
-0.68A
10V
www.irf.com 9
IRFG5210
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
P-Channel Q2,Q4
1 10 1000
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C,
Cap
acita
nce
(pF
)
DS
VCCC
====
0V,CCC
f = 1MHz+ C
+ C
C SHORTEDGSiss gs gd , dsrss gdoss ds gd
Ciss
Coss
Crss
0 4 8 12 16 200
4
8
12
16
20
Q , Total Gate Charge (nC)
-V
,
Gat
e-to
-Sou
rce
Vol
tage
(V
)
G
GS
FOR TEST CIRCUITSEE FIGURE
I =D
13
-0.68A
V =-40VDS
V =-100VDS
V =-160VDS
0.1
1
10
1.0 2.0 3.0 4.0
-V ,Source-to-Drain Voltage (V)
-I
,
Rev
erse
Dra
in C
urre
nt (
A)
SD
SD
V = 0 V GS
T = 25 CJ °
T = 150 CJ °
0.1
1
10
1 10 100 1000
OPERATION IN THIS AREA LIMITEDBY RDS(on)
Single Pulse T T
= 150 C= 25 C°
°JC
-V , Drain-to-Source Voltage (V)
-I
, D
rain
Cur
rent
(A
)I
,
Dra
in C
urre
nt (
A)
DS
D
100us
1ms
10ms
10 www.irf.com
IRFG5210
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+-
VDS
90%
10%
VGS
td(on) tr td(off) tf
P-Channel Q2,Q4
VGS
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Notes:1. Duty factor D = t / t2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
The
rmal
Res
pons
e(Z
)
1
thJA
0.010.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE(THERMAL RESPONSE)
25 50 75 100 125 1500.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
T , Case Temperature ( C)
-I
, Dra
in C
urre
nt (
A)
°C
D
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IRFG5210
Fig 12c. Maximum Avalanche EnergyVs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (BR)DSS
I A S
R G
IA S
0.01Ωtp
D .U .T
LVD S
VD D
D R IVE RA
15V
-20V
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
-10V
D.U.T.VDS
IDIG
-3mA
VGS
.3µF
50KΩ
.2µF12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+
-
-10V
P-Channel Q2,Q4
.
VGS
25 50 75 100 125 1500
60
120
180
240
300
Starting T , Junction Temperature ( C)
E
,
Sin
gle
Pul
se A
vala
nche
Ene
rgy
(mJ)
J
AS
°
IDTOP
BOTTOM
-0.30A -0.43A -0.68A
12 www.irf.com
IRFG5210
➄ Repetitive Rating; Pulse width limited bymaximum junction temperature.
➅ VDD = - 50V, starting TJ = 25°C, L= 475mH,Peak IL = - 0.68A, VGS = -10V
⑦ ISD ≤ - 0.68A, di/dt ≤ - 290A/µs,VDD ≤ -200V, TJ ≤ 150°C
➀ Repetitive Rating; Pulse width limited bymaximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 276mH,Peak IL = 0.68A, VGS = 10V
➂ ISD ≤ 0.68A, di/dt ≤ 290A/µs,VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — MO-036AB
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02
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