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IDW '04Proceedings
of
The 11th International Display Workshops
Workshops on• LC Science and Technologies• Active Matrix Displays• FPD Manufacturing, Materials and
Components•CRTs
• Plasma Displays• EL Displays, LEDs and Phosphors• Field Emission Display• Organic LED Displays• 3D/Hyper-Realistic Displays
and Systems• Applied Vision and Human Factors• Projection and Large-Area Displays,
and Their Components
Topical Session on• Electronic Paper
TECHNISCHE
INFORMATIONSBIBLIOTHEK
UNIVERSITATSBIBLIOTHEKHANNOVER
ITE
Sponsored byThe Institute of Image Information and Television Engineers
Kikai-Shinko-Kaikan, 3-5-8 Shiba-Koen, Minato-ku, Tokyo 105-0011, Japan
The Society for Information Display
61 OS. 2nd Street, San Jose, CA 95112, USA
SIDSOCIETY FW IHfOHMAHOHDISPlAV
TIB/UB Hannover
127 714 014..
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IDW'04
TABLE OF CONTENTS
IDW '04
Wednesday, December 89:00-9:10 Snow Hall
Opening
Master of Ceremony: T. Sugiura, Executive Chair
9:00
Opening RemarksT. Uchida, General Chair
Y. Shimodaira, Program Chair
9:10-10:30 Snow Hall
Keynote Addresses
Keynote Address -1
Displays: Past, Present and Future
R. W. G. Hunt
Colour Consultant, UK
Keynote Address - 2
Digital Broadcasting Technologies : TV for
the 21st Century 7K. Enami
NHK, Japan
10:40-11:50 Snow Hall
Invited Addresses
Invited Address -1
Ubiquitous Displays for UbiquitousComputing 11
H. Nakashima
Future Univ.-Hakodate, Japan
Invited Address - 2
Research and Development of E-Books
M. T. Johnson
Philips Res. Labs., The Netherlands
,15
Workshop onLC Science and Technologies
Wednesday, December 813:30-14:55 Snow Hall B
LCT1: Novel Alignment Technologies
LCT1 -1: Invited Molecular Alignment Pattern
Formation by the Microrubbing Process for
LC Optical Device Applications 21T. Nose, M. Honma
Akita Pref. Univ., Japan
LCT1 - 2: Invited Novel Alignment Technique of
Liquid Crystal Using Hydrophilic/
Hydrophobic Pattern Layer 25A. Suemasu, K. Ikegaml, N. Maji, T. Tanaka
Dai Nippon Printing, Japan
LCT1 - 3 Control of the Liquid Crystal Alignment byTwo-Directional Rubbing 29K. Kuboki, T. Miyashita, T. UchidaTohoku Univ., Japan
LCT1 - 4L System for Measuring Parameters of LiquidCrystal Cells 33S. Valyukh*'**, C. Adis", G. Franklin**,K.Skarp*-**'Dalarna Univ., Sweden
"ConoptixAB, Sweden
15:10-16:35 Snow Hall B
LCT2: LC Alignment and Anchoring
LCT2 -1: Invited Photo-Rubbing: A Method to Induce
Stable Liquid-Crystal Pretilt Angle on Photo-
Alignment Films 35
M. Kimura*'**, S. Nakata*, A. Kumano*,
H. Yokoyama**
*JSR, Japan"Nat. Inst, of Advanced Ind. Sci. &
Tech., Japan
LCT2 - 2 Dual Image Writing on the Liquid CrystalCell Using Unpolarized UV Light 39
R. Yamaguchi, T. Kawamura, S. Sato
Akita Univ., Japan
LCT2 - 3 Highly-Reliable Method of Measuring the
Elastic Constants Ratio and Anchoring
Energy Using LC Cells with Different Gaps43
W. Kaneko, T. Ishinabe, T. Oono, T. Miyashita,T. Uchida
J. Watanabe*, H. Mori*Tohoku Univ., Japan
*Fuji Photo Film, Japan
IDW '04 V
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TABLE OF CONTENTS
LCT2 - 4 Slow Orientational Dynamics and MemoryEffects in Nematic Layers at a Weak Surface
Anchoring 47S. V. Pasechnik, V. G. Chigrinov*,D. V. Shmeliova,V. A. Tsvetkov
Moscow State Ac. oflnstr. Eng. &
Computer Sci., Russia
*Hong Kong Univ. of Sci. & Tech., Hong Kong
16:45-18:10 Snow Hall B
LCT3: LC Materials and Evaluation
LCT4 - 4 3-Color Filter Substrate with Multi Thickness
Technology Used in Transflective TypeLiquid Crystal Display 79O. Mikami*, X. Gu, X. Y. Gong, C. Schmidgall,N. Bergeron,H. Hermens, W. K. Mok
Philips Mobile Display Syss., China*Mitsumura Printing, Japan
10:40-12:10 Snow Hall B
LCT5: Novel LC Modes
,51
LCT3 -1: Invited Recent Liquid Crystal Material
Development for TV ApplicationK. Tarumi, M. Klasen-Memmer
Merck, Germany
LCT3 - 2 A New Design for Transmlsslve Color NB-
STN-LCDs by Using Twisted-NematicCompensators 55A. Mutou, T. Ogasawara, T Uesaka,Y. Kumagai*,S. Nishlmura, T. ToyookaNippon Oil, Japan'Nippon Oil LC Film, Japan
LCT3 - 3 Universal Design Parameter Tz to Determinethe Viewing Angle Property of BiaxialRetardation Films 59
T. Higano, T. Ishinabe, T. Uchida
Tohoku Univ., Japan
LCT3 - 4 A High-Speed Cell Parameter Measurementof Reflective Liquid Crystal Panels by Usinga Polarization Converting Device 63M. Kawamura, S. SatoAkita Univ., Japan
Thursday, December 99:00-10:25 Snow Hall B
LCT4: Transflective LCDs
,83
LCT4-1: Invited Technologies towards PatternedOptical Foils Applied in Transflective LCDs
,67
LCT4 - 2
B. M. I. van derZande, C. Doornkamp,S. J. Roosendaal J. Steenbakkers,A. Op t Hoog, J. T. M. Osenga,J. J. van Glabbeek, L. Stofmeel, J. Lub,Y. Iefujl*, L Weegels*Philips Res., The Netherlands'Philips Mobile Display Syss., Japan
Low Interference In-Cell Diffuse Reflectorsfor Transflective Liquid Crystal Displays
.71
LCT4 - 3
N. Sumi, H. Nakamura, Y. Hamawakl,Y. letup, L M. WeegelsPhilips Mobile Display Syss., Japan
Double-Faced TFT-LCD Having One LCPanel and One Lighting System 75T. Taguchi, K. Nakamura, K. Tsuda, Y. Itoh,N. Kimura
Sharp, Japan
LCT5 -1 Electro-Optical Properties of the HybridColor Reflective VA-LCDY. Asao, R. Isobe
Canon, Japan
LCT5 - 2 Low Power LC Shutter with High ContrastRatio and Fast Response Time 87S. A. Studentsov, V, A. Brezhnev, B. I. GorflnkelN. D. Zhukov, V. G. Chigrinov*, H. S. Kwok*R&D Inst. "VOLGA", Russia
*Hong Kong Univ. ofSci. & Tech., Hong Kong
LCT5 - 3 Bendy Field-Sequential-Color DisplaysUsing A4-Slzed Ferroelectric Liquid CrystalDriven by Active Matrix Method 91H. Fupkake, H. Sato, T. Murashige, Y. Fupsaki,H. Kikuchi, T. KuritaNHK, Japan
LCT5 - 4L TN-LCDs Doped with Pd-Ag CompositeNanoparticles Exhibiting Fast Electro-OpticResponse with a Long Term Stability:Experiments and a Theoretical Explanation
95
T. Miyama*'**, Y. Sakal*, H. Shiraki*,N. Nishida*, Y. Shlraishi*, N. Toshima*-**,S. Kobayashi*'"'Tokyo Univ. of Sci. Yamaguchl, Japan"Nano Opto Labs., Japan
LCT5 - 5L Optimized Voltage Range Selection for OCB-Mode LCD In Field Sequential ColorApplication 97K. Sekiya, K. Wako, S. Nakano, T. Ishinabe*,T. Miyashita*, T. Uchida*
JST, Japan'Tohoku Univ., Japan
Friday, December 109:00-10:10 Room 301
VHF5/LCT6: Pixel Arrangement and Image Quality
VHF5/LCT6-1: Invited PenTile LCDs 1559C. Elliott
Clairvoyante, USA
No manuscript was submitted.
VHF5/LCT6 - 2 Color Image Improvement in Display with ANovel String Pixel Architecture 1563C.-S. Chang, C.-J. Chen, J.-P. PangInnoLux Display, Taiwan
VHF5/LCT6 - 3 Optical and Electrical Characterization ofFlickering of Color STN-LCD 1567R. Chen, X. Zhang, WKMok, P. Machiels*Philips Mobile Display Syss., China'Philips Mobile Display Syss., The Netherlands
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TABLE OF CONTENTS
10:30-12:00 Room 301
VHF6/LCT7: Moving Image Quality
VHF6/LCT7-1: Invited A Review of MPRT MeasurementMethod for Evaluating Motion Blur of LCDs
1571
J. Someya, Y. Igarashi*Mitsubishi Elec, Japan'Hitachi Displays, Japan
VHF6/LCT7- 2 Dynamic Gamma: A Metric for the TemporalResponse Contribution to Motion Blur
1575H. Pan, X. Feng, S. DalySharp Labs, ofAmerica, USA
VHF6/LCT7 3 Parameters of Motion Picture BlurringMeasured by Using a Pursuit Camera
1579K. Oka, K. Kitagishi, Y. EnamiOtsuka Elect, Japan
VHF6/LCT7 4 Motion Picture Quality of Colored ImageMeasured by Using a Pursuit CameraSystem 1583Y. Enami, K. Kitagishi, K. OkaOtsuka Elect, Japan
14:00-17:00 Exhibition Hall B
Poster LCTpl: LC Modes
LCTpl -1 Fabrication Process of A4-size FlexibleFerroelectric Liquid Crystal Displays
101H. Sato, H. Fujikake, T. Murashige, H. Kikuchi,T. Kurita
NHK, Japan
LCTpl - 2 Influence of Polymer Wall Formation on
Electrooptic Behaviors of Ferroelectric
Liquid Crystal 105T. Murashige, H. Fupkake, H. Sato, H. Kikuchi,T. Kurita
NHK, Japan
LCTpl - 3 Single-Crystal Morphologies of Pentacene
Organic Semiconductor Segregated in
Liquid Crystal 109
H. Fupkake, T. Suzuki', Y. Fupsaki,T. Murashige, H. Sato, H. Kikuchi, T. Kurita
NHK, Japan
'Tokyo Univ. of Sci., Japan
LCTpl - 4 White Fluorescent Display Properties in
Liquid Crystal Cells Using Dichroic Dyes113
R. Yamaguchi, K. Moriyama, S. Sato,X. Zhang*, T. Thiemann*, S. Mataka*Akita Univ., Japan'Kyushu Univ., Japan
LCTpl - 5 Multi-Dimensional Alignment for Fasttransition from Splay to Bend States in a nCell 117
C. G. Jhun, J. L Lee, S. H. Kang, S. L Lee,J. C. Kim,T.-H. Yoon, J. Y. Lee*,
Pusan Nat. Univ., Korea
'BOE-HYDIS Tech., Korea
LCTpl - 6 Design of a Wide Viewing-Angle OCB Cellwith Circular Polarizers 121
M. J. Jung, C. G. Jhun, J. C. Kim, T. H. Yoon,J. D. Noh*,D. H. Suh* J. Y. Lee*
Pusan Nat. Univ., Korea'BOE-HYDIS Tech., Korea
LCTpl - 7 Evaluation of Induced Polarization
Dependence in Photo- PolymerizationProcess of Holographic Polymer DispersedLiquid Crystal Films 125A. Ogiwara, M. Takeda, H. Matsuda",O. Tanaka*
Takamatsu Nat. College of Tech., Japan'Okura Ind., Japan
LCTpl - 8 Nematic Diffractive Grating Induced byNano-Treated Silicon Oxide Surface
129
M. I. Gritsenko, S. I. Kucheev, P. M. Litvin*
Chernigov Univ., Ukraine'Inst, of Physics, Ukraine
LCTpl - 9 Liquid Crystal Diffractive Optical DevicesFabricated by Mlcrorubbing Process
133
M. Honma, M. Takeishi, T. Nose
Akita Pref. Univ., Japan
LCTpl -10 Compensation Element of OCB LCD137
S. H. Chang, C. L Pan
Chunghwa Picture Tubes, Taiwan
LCTpl -11 Photoaligned Large Cell Gap Permanent
Grayscale in Bistable TN Liquid CrystalDisplay 141Y. W. Li, S. Y. Yeung, H. S. Kwok
Hong Kong Univ. of Sci. & Tech., Hong Kong
LCTpl -12 Multidimensional Alignment Structure for
Long-Term Memory in a Bistable Chiral-
Splay Nematic Liquid Crystal Device
145
S. H. Kang, C. G. Jhun, S. R. Lee, J. C. Kim,T.-H. Yoon
Pusan Nat. Univ., Korea
LCTpl - 13L 3-D FEM Study Analyzing the LC Cell withProtrusion 149
S.-H. Yoon, S.-l. Yoon, C.-S. Lee, H.-J. Yoon,
D.-W. Kim', M.-S. Jung', T. Won*
Sanayi Sys., Korea*lnha Univ., Korea
14:00 -17:00 Exhibition Hall B
Poster LCTp2: Transflective LCDs
LCTp2 -1 Reduced Power Consumption in a Single-Polarizer Reflective TN-LCD with One
Retardation Film 151
H. Hando, T. Izoe, Y. Sakamoto, I. Fukuda
Kanazawa Inst, of Tech., Japan
LCTp2 - 2 Multimode Transflective LCD 155G.-S. Lee, J. C. Kim, T.-H. Yoon, J. S. Gwag*Pusan Nat. Univ., Korea
'BOE-HYDIS Tech., Korea
IDW '04 VII
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TABLE OF CONTENTS
LCTp2 3 Vertically Aligned Transflective LiquidCrystal Display with Inner Retarders
159
S. J. Park, C. G. Jhun, K.-H. Park, J C. Kim,T.-H. Yoon
Pusan Nat. Univ., Korea
LCTp2 - 4 Configuration of a Transflective IPS LCDwith an Optical Dummy Layer 163K. H. Park, Y. J. Ko, J. C. Kim, T. H. Yoon
Pusan Nat. Univ., Korea
LCTp2 - 5 Electro-Optic Characteristics of In-PlaneDriven Transflective LCD 167
/. H. Yu, J. H. Song, Y. J. Lim, S. H. Lee,D. S. Kim*,H.-S. Soh*, W. Y. Kim*, S. D. Yeo*
Chonbuk Nat. Univ., Korea*LG. Philips LCD, Korea
14:00 -17:00 Exhibition Hall B
Poster LCTp3: LC Alignment
LCTp3 -1 Evaluation of the Surface Anchoring
Strength of the Alignment Film for HighPretilt by Means of the RenormalizedTransmission Spectroscopic Ellipsometry
,171
N. Tanaka, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan
LCTp3 - 2 Evaluation of Polar Anchoring Strength bySymmetric Oblique Incident Transmission
Ellipsometry 175Y. Abe, N. Tanaka, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan
LCTp3 - 3 Characterization of Polyimide MolecularOrientation of LC Alignment Film by GrazingIncidence X-ray Diffraction 179/. Hirosawa
Japan Synchrotron Radiation Res. Inst, Japan
LCTp3 - 4 Investigation of the Surface Alignment of
Liquid Crystal Multi-Layers Evaporated on
Photoalignment Polyimide Film 183T N. Oo, T. Iwata*, M. Kimura, T. Akahane
Nagaoka Univ. of Tech., Japan'Core Sys., Japan
LCTp3 - 5 Withdrawn
LCTp3 - 6 Novel Photo-Aligned Twisted Nematic LiquidCrystal Cell 191
D. D. Huang, V. M. Kozenkov, V. G. Chigrinov,H. S. Kwok, H. Takada; H. Takatsu*
Hong Kong Univ. of Sci. & Tech., Hong Kong'Dainippon Ink & Chems., Japan
LCTp3 - 7L Ion Beam LC Alignment for FFS-LCD withDLCandPI 195
J. G. You, S. J. Kim, J. G. Lee, H. K. Lee,D. K. Lee, J. S. Gwag, J. Y. Ahn, J. M. Jun,J. Y. Lee
BOE-HYDIS Tech., Korea
LCTp3 - 8L Generation of Pretilt Angle on Vertical
Alignment Films by Photo-AlignmentMethod 197
K. Maruyama*'"'**; T. Houryu*, Y. Ilmura*
'Tokyo Univ. ofA&T, Japan"Tech. Res. Assn. forAdvanced DisplayMaterials, Japan
"'Dainippon Ink & Chems., Japan
14:00 -17:00 Exhibition Hall B
Poster LCTp4: Analysis & Characterization
LCTp4 -1 Study on Phase Transition of the OpticallyCompensated Splay (OCS) Cell 199B. S. Jung, S. J. Kim, S. M. Oh, J. Y. Hwang*,D. S. Seo*, J. M. Rhee*, S. H. LeeChonbuk Nat. Univ., Korea
'Yonsei Univ., Korea
LCTp4 - 2 Study on Color Characteristics of the E- andO-Modes in the Fringe-Field Switching Mode
203
/. S. Song*, Y. S. Choi*,", I. S. Balk*,J. H. Song; J. M. Rhee', S. H. Lee*,Y. S. Shin", H. Y. Kim", S. Y. Kim",Y. J. Lim"
'Chonbuk Nat. Univ., Korea
"BOE-HYDIS Tech., Korea
LCTp4 - 3 Analysis of Electro-Optic Characteristics in
Fringe-Field Switching Mode 207J. B. Park, H. Y. Kim, K H. Kim, S. Y. Kim,Y. J. Lim
BOE-HYDIS, Korea
LCTp4 - 4 The Electro-Optical Characteristics of anLCD with Respect to Material Species of theBlack Matrix 211C.-S. Lee, S.-K. Yoon, S.-H. Yoon, H.-Y. Youn*,D.-W. Kim*, M.-S. Jung*, T. Won*
Sanayi Sys., Korea*lnha Univ., Korea
LCTp4 - 5 The Optical Characteristics of a New MVA-LCD Using Computer Simulation 215
D.-W. Kim, M.-S. Jung, H.-J. Yoon, C.-S. Lee*,S.-l. Yoon*, S.-H. Yoon*, T. Won
Inha Univ., Korea
'Sanayi Sys., Korea
LCTp4 - 6 Transient Behaviors of Polymer StabilizedTwisted Nematic Liquid Crystal Cells
219
M. Kamio, M. Nanaumi, T. Takahashi, S. SaitoKogakuin Univ., Japan
LCTp4 - 7 Experimental and Theoretical Studies ofTransient Current of Nematic Liquid Crystalswith Negative Dielectric Anlsotropy Excitedby Step Voltage Application 223Y. Iwata, H. Naito, M. Inoue*, H. Ichinose",M. Klasen-Memmer"*, K. Taruml*"Osaka Pref. Univ., Japan*Toyo, Japan"Merck, Japan'"Merck, Germany
VIII IDW'04
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TABLE OF CONTENTS
LCTp4 - 8 Effect of Electrode Interval in the PVA Mode227
H.-Y. Youn, D.-W. Kim, M.-S. Jung, C.-S. Lee*,S.-K. Yoon*, S.-H. Yoon*, T WonInha Univ., Korea
'Sanayi Sys., Korea
LCTp4 - 9 New Approach to LCD Modeling: 2D Version231
V. G. Chigrinov, D. A. Yakovlev*, V. I. Tsoi*Hong Kong Univ. of Sci. & Tech., Hong Kong'Saratov State Univ., Russia
LCTp4 -10 A Simple Measurement System for
Determining Cell Thickness and Twist Anglein Reflective Liquid Crystal Displays
235
M. Kawamura, M. Konda, S. SatoAkita Univ., Japan
LCTp4 -11 The Effect of Polarity of Contamination onLCD Performance 239
K.-N. Yang, L.-H. HsuAU Optronics, Taiwan
LCTp4 -12 Ring Projector from Surface StabilizedCholesteric Texture Film
C.-Y. Huang, C.-Y. HuNat. Changhua Univ. of Education, Taiwan
243
LCTp4 -13 High-Throughput Screening of the Helical
Twisting Power Property Using Micro-FTIR
Spectroscopy for Novel Chiral Materials247
J. H. Ma, Y. P. Lin, W. C. Chen, R. J. WuITRI, Taiwan
LCTp4 - 14L A Simple Twist-Angle-Measurement Methodfor a TN Cell Independent of DirectorDirection 251
T. Nishioka, T. Satake, T. Kurata, M. Okabe*.M. Kaneko*, T. Maehara*
Mitsubishi Elec, Japan'Meiryo Technica, Japan
LCTp4 - 15L Molecular Dynamics in a PAMAM Liquid
Crystalline Co-Dendrimer Investigated byNMR Relaxometry 253A. Van-Quynh', P.J. Sebastiao*-",M. Marcos'", D. Filip*-"", A.C. Ribeiro'-",J.L Serrano'", C. Cruz''", J.-M. Rueff"'
*Univ. de Lisboa, Portugal"IST-UTL, Ponugai'"Univ. Zaragoza-CSIC, Spain"""Petru Poni" Inst, of Macromolecular Chem.,
Romania
EP3/AMD1 2 A Fully Integrated Low-Power High-VoltageBistable Display Driver for Smartcard
Applications 1733W. Hendrix, J. Doutreloigne, A. Van CalsterGhent Univ., Belgium
EP3/AMD1 - 3 An Intelligent Driving Scheme for High-
Voitage Display Drivers 1737A. Monte, J. Doutreloigne, A. Van CalsterGhent Univ., Belgium
Thursday, December 99:00-10:25 Marine Hall
AMD2/OLED4: AM-OLED (1)
AMD2/0LED4 -1: Invited High-Performance and Low-Power
AMOLED Using White Emitter with Color-
Filter Array 259
K Mameno, R. Nishikawa, T. Omura,S. Matsumoto, S. A. Van Slyke*, A. D. Arnold*,T. K. Hatwar*. M. V. Hettel*, M. E. Miller*,M. J. Murdoch*, J. P. Spindler*Sanyo Elec, Japan'Eastman Kodak, USA
AMD2/0LED4-2 2.2-in. QVGA AMOLED with Current De-
Multiplexer TFT Circuits 263Y. Matsueda, D. Y. Shin, K. N. Kim, D. H. Ryu,B. V. Chung, H. K. Kim, H. K. Chung,O. K. Kwon*
Samsung SDI, Korea
'Hanyang Univ., Korea
AMD2/OLED4-3 Optical Cross Talk in AMOLED Displays with
Optical Feedback 267A. Giraldo, W. Oepts, M. C. J. M. Vissenberg,D. A. Fish', N. D. Young'
Philips Res. Labs., The Netherlands
'Philips Res. Labs., UK
AMD2/OLED4 -4 Comparison of Driving Methods for TFT-
OLEDs and Novel Proposal Using TimeRatio Grayscale and Current Uniformization
271
M. Kimura, Y. Hara, Y. Kubo, T. Akai, R. Saito
Ryukoku Univ., Japan
10:40-12:05 Marine Hall
AMD3/OLED5: AM-OLED (2)
Workshop on Active Matrix Displays
Wednesday, December 816:50-17:55 Room 201
EP3/AMD1: Electronic Paper (3)
EP3/AMD1 -1: Invited Driving an Active Matrix
Electrophoretic DisplayG. F. Zhou, M. T. Johnson, R. Cortie,
R. Zehner*, K. Amundson*, A. V. Henzen*
J. van de Kamer"
Philips Res., The Netherlands*E Ink, USA
"Philips Emerging Display Tech.,The Netherlands
1729
AMD3/OLED5-1: Invited Solution for Large-Area Full-Color
OLED Television - Light Emitting Polymerand a-Si TFT Technologies - 275
T. Shirasakl, T. Ozaki, T. Toyama, M. Takei,M. Kumagai, K. Sato, S. Shimoda, T. Tano,K. Yamamoto, K. Morimoto, J. Ogura,R. Hattori*
Casio Computer, Japan"Kyushu Univ., Japan
AMD3/OLED5-2 A Novel Digital-Gray-Scale Driving Method
with a Multiple Addressing Sequence forAM-OLED Displays 279A. Tagawa, T. Numao, T. Ohba
Sharp, Japan
IDW '04 IX
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TABLE OF CONTENTS
AMD3/OLE05 • 3 A 2.0-in. AMOLED Panel with VoltageProgramming Pixel Circuits and PointScanning Data Driver Circuits 283N. Komiya, C. Y. Oh, K. M. Eom, Y. W. Kim,S. C. Park, S. W. Kim
Samsung SDI, Korea
AMD3/OLED5 -4 A Simple Data Driver Architecture toImprove Uniformity of Current-DrivenAMOLED 287
H. Y. Huang, W. T. Sun, C. C. Chen,J. C. Tseng, S. Hopf, C. F. Sung, C. H. Li,S. H. Li, J. C. Peng, Y. F. Wang, J. J. Lih,C. S. YangAU Optronics, Taiwan
13:45-15:00 Marine Hall
AMD4: LC-TV
AMD4-1: Invited Recent Development of High QualityLCD-TVs 291
M. Shigeta, M. Shiomi, M. Hirata, H. Fukuoka
Sharp, Japan
AMD4 - 2: Invited High Performance IPS Technologyfor LCD-TVs: AS-IPS2 295
K. Ono, I. Mori, R. Oke, Y. Tomioka', Y. SatouHitachi Displays, Japan'Hitachi, Japan
AMD4 - 3: Invited Recent Progress of LC-TVs UsingOCB Mode 299
A. Takimoto, H. Wakemoto, K. Nakao
Toshiba Matsushita Display Tech., Japan
,319
AMD5 - 5L Real Time Monitoring of Solid-LiquidInterface Motion Induced by ELA of
Amorphous-Silicon Thln-Films
Y. Takami, T. Warabisako
ALTEDEC, Japan
Friday, December 109:00-10:30 Marine Hall
AMD6: Mobile Display
,321
AMD6 -1: Invited System-On-Glass Displays forMobile ApplicationsH. Asada
NEC, Japan
AMD6 - 2: Invited Advanced Laser-CrystallizationTechnologies of Si for Next-Generation TFTs
325
M. Hiramatsu
ALTEDEC, Japan
AMD6 - 3 A 1.9-in. QVGA a-Si AMLCD with Gate Driver
Integration and High Brightness 329T. Inada, S. C. Deane*, M. Cassldy*,K. Yamashita, A. Iwatsu, S. Kawata,M. Yoshiga, M. Shibazaki, J. R. Hector*,M. Inoue
Philips Mobile Display Syss., Japan*Philips Res. Labs., UK
AMD6 - 4 Integrated Gate Driver Circuit Using a-SiTFT with Dual Pull-Down Structure 333
Y. H. Jang, S. Y. Yoon, B. Kim, M. D. Chun,H. N. Cho, N. W. Cho, C.-D. Kim, I. J. ChungLG.Philips LCD, Korea
15:20-17:00 Marine Hall
AMD5: TFT Technologies
AMD5 -1: Invited Research, Development andFabrication of Integrated Amorphous SiliconDrivers AMLCDs: A Review 303
J. Magarino, T. Kretz, H. Lebrun, N. SzydloThales Avionics LCD, France
AMD5 - 2 Kink-Current Reduced Poly-Si TFTs
Employing Asymmetic Dual-Gate Design forAMOLED Pixel Elements 307
W.-J. Nam, J. H. Kim, S.-H. Jung, H.-S. Shin,M.-K. Han
SeoulNat. Univ., Korea
AMD5 - 3 Reduction of Kink Current in Single GrainTFTs Fabricated by Micro-CzochralskiProcess 311
V. Rana, R. Ishihara, Y. Hiroshima*, S. Inoue*,T. Shimoda*, J. W. Metsalaar,C .1. M. Beenakker
Delft Univ. of Tech., The Netherlands'Seiko Epson, Japan
AMD5 - 4 Lateral Crystallization of Amorphous SiliconUsing Single Pulsed Exclmer Laser for Poly-Si TFT 315
K. B. Park', H. S. Cho*, H. Yin*, J. S. Jung',D. Y. Kim*, W. Xianyu*, J. Y. Kwon*,Y.S.Park*, T.Noguchi'-"'Samsung Advanced Inst, of Tech., Korea"Sungkyunkwan Univ., Korea
10:45-12:10 Marine HallAMD7: System on Panel
AMD7 -1: Invited Advanced TFT Technologies forSystem-on Glass 337G. Kawachi
ALTEDEC, Japan
AMD7 - 2: Invited Development of SLS-Based MobileDisplays 341C.-W. Kim, K.-C. ParkSamsung Elect, Korea
AMD7 - 3 A Vth-Self-Compensated Analog BufferUsing Low Temperature Poly-Silicon ThinFilm Transistors 345S. H. Yeh, W. T Sun, C. S. YangAU Optronics, Taiwan
AMD7 - 4L A Touch Panel Function Integrated LCD
Using LTPS Technology 349N. Tada, H. Hayashi, M. Yoshlda, M. Ishikawa,T. Nakamura, T. Motai, T. NishibeToshiba Matsushita Display Tech., Japan
12:20-13:30
Outstanding Poster Paper Awards at Exhibition Hall B
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TABLE OF CONTENTS
13:40-15:15 Marine HallAMD8: Organic TFT Technologies
AMD8 -1: Invited Active-Matrix Display Driven byOrganic Thin-Film Transistors on FlexibleSubstrate 351C. C. Lee, J. C. Ho, L. Y. Huang, T. S. Hu,Y. W. Wang, C. C. Hsieh, W. K. Hwang,W. L. Lin, H. Y. Cheng, T. H. Lin,Y. K. Wang, P. S. Wu
ERSO/ITRI, Taiwan
AMDS - 2: Invited Active-Matrix OLED Panel Driven byOrganic TFTs 355Y. Inoue, Y. Fupsaki, T. Suzuki, S. Tokito,T. Kurita, M. Mizukami', N. Hirohata*, T. Tada*,S. Yagyu*NHK, Japan*JVC, Japan
AMD8 - 3: Invited Large Area, High Performance OTFTArrays 359T. W. Kelley, P. Baude, M. Haase, D. Ender,D. Muyres, S. D. Theiss, R. Boehmer, J. Tokie,G.Lee
3M, USA
AMD8 - 4 Liquid Crystal Display Cells Fabricated on aFlexible Plastic Substrate Driven by a Low
Voltage Operation Organic TFT 363V. Fupsaki, Y. Inoue, H. Sato, H. Fupkake,S. Tokito, T. Kurita
NHK, Japan
13:30 -16:30 Exhibition Hall B
Poster AM Dp: Active-Matrix Display
AMDp-1
AMDp- 2
AMDp-3
AMDp- 4
MED Sometimes Defeats GAP: A
Performance Study on Multi-Valued ImageEntropy Coding 383H. Sasaki, T. Arai, M. Hachiuma, A. Masuko,T. TaguchiToshiba, Japan
Optimization of the Driving Voltage for FastResponse of AMLCDs 387S.-l. Yoon, S.-H. Yoon*, C.-S. Lee', H.-J. Youn,D.-W. Kim, M.-S. Jung, T. WonInha Univ., Korea
'Sanayi Sys., Korea
Design and Implementation of mini-LVDSReceiver in 0.35pm CMOS Process 391J.-H. Kim, J.-C. Choi, J.-S. Lee, C.-S. Jang',J.-S. Yoo*. D.-H. Lee*, O.-K. Kwon, l.-J. Chung*Hanyang Univ., Korea
'LG.Philips LCD, Korea
Effects of Capping Si02 Layer on theLocation-Controlled Si Grain by u-Czochralski (grain filter) Process withExcimer-Laser 395
M. He, R. Ishihara, Y. Hiroshima*, S. Inoue*,T. Shimoda*, J. W. Metselaar,
C. I. M. Beenakker
Delft Univ. of Tech., The Netherlands
'Seiko Epson, Japan
15:30-17:00 Marine Hall
AMD9: Flexible Display
AMD9 -1: Invited Printing of Polymer Transistors forFlexible Active Matrix Displays 367H. Sirringhaus*'"'Plastic Logic, UK**E Ink Corp., USA
AMD9 - 2:
AMD9- 3
AMD9- 4
Invited Rollable Displays and IntegratedDrivers Based on Organic Electronics
,371
£ Van Veenendaal, L. Schrijnemakers,M. Van Mil, P. Van Lieshout, F. Touwslager,G. Gelinck, E. Huitema
Philips Res. Lab., The Netherlands
Development of a Transmissive a-Si TFT-LCD with Transparent Plastic Substrates
375
Y. Chikama, H. Nishiki, Y. Nakatani,
N. Watanabe, H. Gotoh; H. Umeda*, W. Oka*
Sharp, Japan'Sumitomo Bakelite, Japan
Fabrication of High Performance PolymerThin-Film Transistors on a Paper 379Y. H. Kim, C. J. Lee, D. G. Moon, W. K. Kim,J. I. Han
KETI, Korea
AMDp- 5
AMDp-6
AMDp - 7
AMDp-8
AMDp- 9
Low Threshold Voltage Polysilicon TFTswith Dual-Layer SiNx/Si02 Gate Dielectric
.399
P.-H. Tsai, H.-T. Chen, C.-L Chen
ERSO/ITRI, Taiwan
Numerical Analysis for Spatial Period ofPeriodic Grain Boundary in Si Thin Film
Crystallized by Linearly Polarized Nd:YAGPulse Laser with Oblique Incidence 403
H. Kaki, K. Nishioka, S. Horita
JAIST, Japan
Uniformity Improvement of Plasma SourceUsing Single-Layer Slotted Waveguide Array
407
T. Ide, A. Sasaki, K. Azuma, Y. Nakata,
T. Hirano*. M. Ando*ALTEDEC, Japan'Tokyo Inst, of Tech., Japan
Low Energy Doping and 450°C ThermalActivation Process Developments for LTPSTFT Device 411
J. G. Jung, K. M. Park, C. K. Yoo, C. Yi,C. W. Kim
Samsung Elect, Korea
Analysis of the Leakage Current in Poly-Si p-Channel TFT Due to Doping Condition
415
J. Y. Yang, Y. J. Kim, S. W. Lee, S. H. Kim,H. C. Kang,K. M. Lim, C. D. Kim, M. S. Yang, I. J. ChungLG.Philips LCD, Korea
IDW '04 XI
-
TABLE OF CONTENTS
AMDp -10 Highly Stable a-Si:H TFTs Prepared with
Optimum SINx Films by PECVD UsingTaguchi Method 419C.-Y. Wu, C.-H. Chen, Y.-C. Kuan, K.-S. Sun
Chunghwa Picture Tubes, Taiwan
AMDp -11 Extreme Grain Growth of Poly-Si Film byExcimer Laser Annealing for Sputtered a-SiFilm at Room Temperature 423D. Y. Kim*, J. S. Jung*, H. S. Cho*, J. Y. Kwon*.K. B. Park', H. Lim*, T. Noguchi*-"'Samsung Advanced Inst, of Tech., Korea
"Sungkyunkwan Univ., Korea
AMDp -12 Drain-Induced Barrier Lowering in
Polysilicon Thin-Film Transistors 427B. D. Choi, M. S. So, B. Song, D. C. Choi,Y. G. Mo, H. K. ChungSamsung SDI, Korea
AMDp -13 Continuous Argon Laser Crystallization of
Patterned Silicon 431
J. F. Michaud, R. Rogel, T. Mohammed-Brahim,M. Sarret, O. BonnaudUniv. de Rennes 1, France
AMDp -14 Crystallization of RF Sputter DepositedAmorphous Silicon Thin Film and TransistorCharacteristics 435
Y.-H. Kim, D.-l. Kim, C.-H. Chung, J. W. Lim,S. J. Yun, D.-W. Kim, D.-J. Park, Y.-H. Song,J. H. Lee
ETRI, Korea
AMDp -15 3.8-in. System on Panel LCD EmployingAdvanced CMOS LTPS Technology 439J. S. Yoo, K. M. Lim, K. £ Lee, S. W. Lee,J. M. Yoon, M. K. Baek, J. S. Yu, J. K. Park,J. K. Kang, C. D. Kim,I. J. ChungLG.Philips LCD, Korea
AMDp -16 Improvement of LTPS TFT Digital CircuitPerformance for System-On-PanelApplication 443J.-G. Kim, J. H. Hur*, J. Y. JeongUniv. ofSuwon, Korea
'Anyang Univ., Korea
AMDp -17 A New Offset Compensation Circuit for HighGray Scale TFT-LCD Data Driver 447J.-C. Choi, J.-S. Lee, O.-K. Kwon
Hanyang Univ., Korea
AMDp -18 The Circuit Development of Liquid CrystalDisplay Driver for New Type COG Panel
.451
K Nishi, Y. Dol, T. Ohmori, Y. DateMatsushita Elec. Ind., Japan
AMDp -19 A New All-P TFT(or All-N TFT) Robust Shift
Register 455
J.-R. Lin, C.-F. Chung, C. -C. LinERSO/ITRI, Taiwan
AMDp - 20 Fabrication of Organic TFTs with High-KGate Insulator Deposited by RF SputteringMethod 459
Y. Kouda, A. Kobayashi, Y. limura
Tokyo Univ. ofA&T, Japan
AMDp - 21 Low Temperature Processable InherentlyPhotosensitive Polyimide as a Gate Insulatorfor Organic Thin Film Transistors 463
S. M. Pyo, H. S. Son, Y. J. Lee, J. H. Lee,
K.-Y. Choi, M. H. Yi
Korea Res. Inst, of Chem. Tech., Korea
AMDp - 22 Bias-Stress Effect on the Performance of
OTFT on Plastic Substrate 467
S. H. Han, S. H. Kim, S. M. Cho*, M. H. Oh*,J. JangKyung Hee Univ., Korea*Dankook Univ., Korea
AMDp - 23 Pentacene Organic Thin-Film Transistors
with MoW and ITO Contact and SI02 GateDielectric 471
M. S. So, B. D. Choi, M. C. Suh, J. B. Koo,D. C. Choi, I. B. Song, K. Y. Lee, Y. G. Mo,H. K. Chung
Samsung SDI, Korea
AMDp - 24 Chracterization of Photosensitive PolymerInsulator Materials 475
G. H. Kim, S.-M. Yoon, I.-. Ryu, S. Y. Kang,K. S. Suh
ETRI, Korea
AMDp - 25 Effects of Inorganic Gas Barriers on the
Overlay Tolerance in TFT Fabrication onPlastic Substrates 479
D.-J. Park, J.-W. Lim, C.-H. Chung, S.-J. Yun,Y.-H. Kim, Y.-H. Song, D.-W. Kim, J. H. Lee
ETRI, Korea
AMDp - 26 Low-Damaged Dry Etching of BCB PolymerFilm for Interlayer Dielectrics of Poly-Si TFTon Plastic Substrate 483
D. W. Kim, S. J. Yun, Y.-H. Kim, C.-H. Chung,J. W. Lim, Y.-H. Song, D.-J. Park, J. H. Lee
ETRI, Korea
AMDp - 27L Improvement of Response Time and
Dynamic Contrast Ratio In 42-in. TFT-LCDPanel for HDTV 487S. H. Lee, J. H. Park, J. H. Yoon, C. G. Kim,M. H.Park S.D. Yeo
LG.Philips LCD, Korea
AMDp - 28L Trap Densities at Oxide Interface and GrainBoundaries in Poly-Si TFTs with OxygenPlasma Treatment Followed by HydrogenPlasma Treatment 489
M. Kimura, T. Yasuhara, K. Harada, R. Saito,D. Abe*, S. Inoue; T. Shimoda*Ryukoku Univ., Japan'Seiko Epson, Japan
AMDp - 29L Extraction of Trap Density at OxideInterfaces in Thin-Film Transistors byComparing Low and Hlgh-Frequency C-VCharacteristics 491
M. Kimura, D. Abe', S. Inoue*, T. Shimoda*Ryukoku Univ., Japan*Seiko Epson, Japan
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TABLE OF CONTENTS
AMDp - 30L Abnormal Subthreshold Characteristics ofPoly-Si TFTs Fabricated by Two ShotSequential Lateral Solidification
493
J. C. Park, S. Y. Kwon, H. N. Lee, M.-K. Ryu,E. S. Kim, K. S. Son, J. H. Lee, J. S. Lim,J. Y. Lee
BOE-HYDIS Tech., Korea
AMDp - 31L Relationship between Defect Formation andHydrogen Concentration in Poly-Si film
495
N. Kawamoto, A. Masuda*, N. Matsuo",Y. Seri*, T. Nishimori, Y. Kitamon,H. Matsumura*, Y. Harada", H. Hamada***,T. Miyoshi
Yamaguchi Univ., Japan'JAIST, Japan"Univ. ofHyogo, Japan"'Sanyo Elec, Japan
AMDp - 32L Characteristics of TFTs Fabricated with
Tiled-Ribbon-Shaped Thin Silicon Grains497
M. Nakata, H. Okumura, H. Kanoh, H. HayamaNEC, Japan
AMDp - 33L Visualization of Single-Shot Excimer-Laser
Light-Pulse Profiles 499N. Akita, Y. Taniguchi, H. Ogawa, M. Jyumonp,T. Katou, M. Hiramatsu, M. Matsumura
ALTEDEC, Japan
AMDp - 34L Fabrication of Fine Copper Interconnectswith Selective Electroless Plating Method
.501
S. Aomori, M. Kado, H. NakamuraALTEDEC, Japan
AMDp - 35L High Throughput ELA Process with a LongProximity Stripe Phase Shift Mask 503T. Sato, K. Takeda, M. Saitou*Hitachi, Japan'Hitachi Displays, Japan
AMDp - 36L Nanocrystalline-Si Thin Film Deposited byICP-CVD for Flexible Displays 505S.-M. Han, J.-H. Park, H.-J. Lee, M.-K. Han,J.-Y. Kwon*, T. Noguchi*Seoul Nat. Univ., Korea
'Samsung Advanced Inst, ofTech., Korea
AMDp - 37L Microcrystalline Si Growth at 150°C on Zr02Gate Dielectric for Flexible Display 507
C.-W. Han*-", J.-H. Park*, S.-H. Jung*,M.-K. Han*, K.-Y. Kim", l.-J. Chung",S.-J. Yun***, J.-W. Lim"*
'Seoul Nat. Univ., Korea
"LG. Philips LCD, Korea
'"ETRI, Korea
AMDp - 38L Characterization of Micro-Structures of CWLaser Crystallized Polycrystalline SiliconFilms 509
Y. M. Ku, K. H. Kim, S. H. Kang, S. J. Park,J. Jang
Kyung Hee Univ., Korea
AMDp - 39L Selective Removal of SiOxNySemitransparent Film Over Si02 Film in theHeat Retaining Enhanced CrystallizationMethod for Fabrication of TFTs 511
W. C. Yeh, G. Z. Chen, Y. C. Liu, J. X. Lin*,C. L. Chen*, Y. C. Chen*, P. H. Tsai*Nat. Taiwan Univ. of Sci. & Tech., Taiwan
*ITRI, Taiwan
AMDp - 40L Surface-Wave Plasma CVD Process UsingSlotted Waveguide Antenna For Gate
Insulators 513
A. Sasaki, T. Ide, F. Nakano, Y. Nakazaki,G. Kawachi, K. Azuma
ALTEDEC, Japan
AMDp - 41L Excimer Laser Annealing of Low
Temperature Semitransparent SiliconOxynitride Gate Insulator 515W. C. Yeh, G. Z. Chen, H. E. Huang, S. L LeeNat. Taiwan Univ. of Sci. & Tech., Taiwan
AMDp - 42L Effect of Back Gate-Bias on the Performanceof P-Channel GGS poly-Si TFT on Foil
517
J. H. Cheon
Kyung Hee Univ., Korea
13:30-16:30 Exhibition Hall B
Poster AMD/OLEDp: Active-Matrix OLED
AMD/OLEDp -1 A Circuit for Testing TFT-Arrays of AMOLED
Displays519
D. Nakano, Y. Sakaguchi, K. Imura, A. OhtaIBMJapan, Japan
AMD/OLEDp-2 Active Organic Light Emitting Diode DriveCircuit 523
H.-R. Han*-", C.-C. Kuo*-", W.-T Liao',S.-T. Lo*, W.-C. Wang*'Wintek, Taiwan
"Nat. Chung Hsing Univ., Taiwan
AMD/OLEDp-3 A New AMOLED Pixel Driving Scheme
Employing VDD Line Elimination 527W.-J. Nam, J.-H. Lee, S.-H. Jung, C.-W. Han,M.-K. Han
Seoul Nat. Univ., Korea
AMD/OLEDp -4 A New AMOLED Pixel Design CompensatingThreshold Voltage Degradation of a-Si:H TFTand OLED 531
J. H. Kim, J.-H. Lee, W.-J. Nam, B.-H. You,M.-K. Han
Seoul Nat. Univ., Korea
AMD/OLEDp-5 Uniformity of AM-OLED Pixels Circuits
Using as-Deposited Polysilicon TFTsImproved by Slicing Effect 535A. Gaillard*'", T. Mohammed-Brahim',S. Crand*, R. Roger, C. Prat", P. Leroy"'Univ. de Rennes 1, France
"Thomson Multimedia R&D, France
AMD/OLEDp 6L A New Voltage Driven Pixel Circuit for LargeSized AMOLED Panel 539
Y. J. Park, J. Huh, B. K. Kim, M. H. Jung,O. H. Kim
Pohang Univ. of Sci. & Tech., Korea
IDW'04 XIII
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TABLE OF CONTENTS
AMD/OLEDp 7L The Suppression of the Threshold VoltageShift in a-Si TFT Pixel for AMOLED by
Employing the Reverse Bias Annealing541
J H Lee, C W Han, B H You, M K Han
Seoul Nat Univ, Korea
Workshop on FPD Manufacturing,Materials and Components
Wednesday, December 813:30-14:50 Snow Hall A
FMC1: Materials (1)
FMC1 -1: Invited Non-Diffuse Cu-Alloy Thin-Film forTFT-LCDs 545
T Ueno, N Oda, J P Chu
DEPT, Japan
FMC1 - 2: Invited Individually Dispersed ITO
Nanoparticle Ink for Transparent Conductive
Film Formation 549
M Oda, H Yamaguchi, N Abe, T Atsuki,S Ukishima, H Takei, S Ishibashi,
R Kiyoshlma*, S Shiraishi*. T Hayashi'ULVAC, Japan'JEMCO, Japan
FMC1 - 3 Reduced Power Consumption of a TouchPanel Using Patterned Indium Tin OxideResistors 553
C-M Hsu, Y-Z Chang, H-M Liu, H-E Chen,W-T Wu
Southern Taiwan Univ of Tech, Taiwan
FMC1 - 4: Invited Transparent Carbon NanotubeElectrodes for LCD Color Filters 557
D Arthur, P Wallis, J Luo
Eikos, USA
15:10-16:10 Snow Hall A
FMC2: Manufacturing Technologies (1)
FMC2-1: Invited New Optical Metrology Techniquesfor Color Filter Inspection and Process
Control 561
D Grigg, R Garden, M Mino, H Lu
Zygo, USA
FMC2 - 2: Invited Optical Inspection System for theNext Generation LCD Production 565
N Kakishita
Kubotek, Japan
FMC2 - 3L Flat Panel Assembly Using Jet Dispensingfor Gasketing Applications 569T Ratledge, F Suriawdijaja, K Fukunaga
Asymtek, USA
FMC3 - 2: Invited Fabrication System of Patterned
Spacers with High Uniformity by Transfer
Method 575
H /to/7, S Yoshmari, K Hasebe
Fuji Photo Film, Japan
FMC3 - 3 New Color Filter Carried Out by a Roll-to-Roll Process 579
T Eguchi, A Sonehara, A Sugizaki, T /to*
A Kumano", T Takahashi***
Tech Res Assn for Advanced DisplayMaterials, Japan'Sumitomo Bakellte, Japan"JSR, Japan'"Dai Nippon Printing, Japan
Thursday, December 99:00-10:20 Snow Hall A
FMC4: Advanced Technologies
FMC4-1: Invited New EU Legislation (WEEE)Compliant Recovery Processes for LCDs
583
R Martin, B Simon-Hettich, W Becker
Merck, Germany
FMC4 - 2 New Simulation Methods for Optimizing theVisual Ergonomics of Displays 587J Delacour, L Fournler, E Humbert,J-P Menu*
Optis, France*IMNSSA, France
FMC4 - 3 New 3-D MEMS Approach for Precision
Manufacturing of Flat Panel Displays.591
M Nosaka, L Creagh
Spectra, USA
FMC4-4: Invited Inkjet Printed LCDs 595J Vogels*, S Klink; R Penterman*,H. de Koning*, H Huitema*, D Broer*1**
'Philips Res, The Netherlands"Tech Univ of Eindhoven, The Netherlands
10:40-12:00 Snow Hall A
FMC5: Manufacturing Technologies (2)
FMC5 -1: Invited Contactless Panel TransportationSystem 599S Yamamoto
Orbotech Japan, Japan
FMC5 - 2 The Latest PECVD Technology for Large-Size TFT-LCD 603
T Takehara, S Sun, I D KangAKT, USA
FMC5 - 3 Withdrawn
16:50-17:50 Snow Hall A
FMC3: Color Filter
FMC3 -1 High Sensitivity and High OD Value Carbon
Dispersed Black Resist for LCD Color Filter571
K Uchikawa
Tokyo Ohka Kogyo, Japan
FMC5 - 4 Wide ECR Plasma Source by ParallelIntroduction of Synchronlzed-PhaseMicrowaves for Large Area Substrates
.611K Saito, H Takagi, T Takahashi, T Nozaki,S Matsuo
NTTAfty, Japan
XIV IDW '04
-
TABLE OF CONTENTS
14:00-15:20 Snow Hall AFMC6: Manufacturing Technologies (3)
FMC6 -1: Invited Solid State YAG2co Laser AnnealingSystem for the Fabrication of Poly-Si TFT-FPDs 615K. Tamagawa, T. Ohnishi, T. Kikuchi,M. HayamaULVAC, Japan
FMC6 - 2 DPSS Green Laser CrystallizationTechnology Based on Double-PulsedControl 619T Kudo, K. Yamazaki, T. AkashiSumitomo Heavy Inds., Japan
FMC6 - 3 Laser CVD Repair Technology for Final YieldImprovement Method in Mass and LargeSize TFT-LCD Production Process 623K. Wakabayashi, K. Mitobe, T. TorigoeLaserfront Tech., Japan
FMC6 - 4 A Narrow Bezel LCD Panel with a ShieldingPattern Design for ODF Process 627L Jiang, H.-J. Chu, C.-K He, W.-H. Liu,S.-H. Hou
Chunghwa Picture Tubes, Taiwan
FMC8 - 2: Invited Novel Design Method UsingBirefringence Dispersion Control ofRetardation Filmsfor a High Contrast LCD inWide Viewing Angle Range
647
A. Uchiyama*'**, T. Ishinabe*, T. Miyashita*,T. Uchida', V. Ono", Y. Ikeda"
*Tohoku Univ., Japan"Teipn, Japan
FMC8 - 3 Depth-Dependent Determination ofMolecular Orientation for WV-Film 651
Y. Takahashi, H. Watanabe, T. Kato*
Fup Photo Film, Japan*Josai Univ., Japan
FMC8 - 4 A New Polarizer with Wide Viewing Angleand Low Color Shift Characteristics
Designed for In-Plane-Switching LiquidCrystal Display (IPS-LCD) 655J. S. Yu, S. V. Belyaev, M. S. Park, B. K. Jeon,D. Cho, J.-S. Park, N. V. MallmonenkoLG Chem, Korea
10:40-12:00 Snow Hall A
15:40-16:40 Snow Hall A
FMC7: Materials (2)
FMC7 -1: Invited Deposition of High CrystalllnityPolycrystalline Si and SiGe Thin Films onGlass Substrates by ReactiveThermal CVD 631
J. Hanna
Tokyo Inst, of Tech., Japan
FMC7 - 2: Invited Materials for Printed Organic ThinFilm Transistors 635
T. Kamata, T. Kodzasa, S. Uemura,M. Yoshida, S. Hoshino, K. YaseNat. Inst, ofAdvanced Ind. Sci. & Tech., Japan
FMC7 - 3 UV-Nanoimprint Lithography Using NewPhoto-Curable Materials and 3-Demensional
Patterning Method
639
N. Sakai, M. Ohtaguchi, K. Kawaguchi*,J. Taniguchi*, I. Miyamoto'Toyo Gosei, Japan'Tokyo Univ. ofSci., Japan
9:00-10:20Friday, December 10
FMC8: Optical FilmsSnow Hall A
FMC8 -1: Invited Nano Crystal-Doped Zero-Birefringence Optical Polymers for LiquidCrystal Displays 643A. Tagaya*'", H. Ohkita*'", Y. Koike*'"*Keio Univ., Japan"Japan Sci. & Tech. Agency, Japan
FMC9: Backlight Systems (1)
FMC9 -1: Invited Efficient Polarized-Light Backlights659
H. J. Cornelissen*, D. J. Broer*'",K. W. Chien'", H. J. B. Jagt',C. W.M. Bastiaansen"
'Philips Res. Labs., The Netherlands
"Eindhoven Univ. of Tech., The Netherlands*"Nat. Chiao Tung Univ., Taiwan
FMC9 - 2 Spatially Controlled Light Extraction from aPlanar Waveguide for Dynamic Backlighting
663
M. J. J. Jak*, H. de Koning*, H. J. Cornelissen*,D. J. Broer*'", S. Y. Thang***'Philips Res. Labs., The Netherlands"Eindhoven Univ. of Tech., The Netherlands'"Philips MDS, China
FMC9 - 3 Novel Beam Shaping Structure for the CCFLBased Direct Backlight System 667S. C. Chung, C. R. Ou, H. Y. Lin, B. Horng,C. C. Lin, H. H. Lo, C. X. TsengITRI/OES, Taiwan
FMC9 - 4 Application of Adaptive Dimming Techniqueto a 17-in. LCTV for Reducing BacklightPower 671
N. Takeo, S. Kuwahara, T. Shiga, S. MikoshibaUniv. of Electro-Commun., Japan
12:20-13:30
Outstanding Poster Paper Awards at Exhibition Hall B
14:00-15:20 Snow Hall A
FMC10: Backlight Systems (2)
FMC10 -1 The Latest Technologies of a CCFL for aLarge Area LCD-TV 675N. Hashimoto, K. Matsuo, H. Yamashita,K. Yamada*
Matsushita Elec. Ind., Japan'West Elec, Japan
IDW '04 XV
-
TABLE OF CONTENTS
FMC10-2: Withdrawn
FMC10 - 3 RGB-LED Backlighting Monitor/TV for
Reproduction of Images in Standard and
Extended Color Spaces.683
K. Kalantar, M. Okada
Nippon Leiz, Japan
FMC10 - 4 Prism-Sheetless High-Brightness Backlight
System for Mobile Phone 687
A. Funamoto, Y. Kawabata, M. Ohira,
S. AoyamaOmron, Japan
15:40-16:40 Snow Hall A
FMC11: Optical Systems
FMC11 -1: Invited Photonic Functions of Periodic
Mlcrostructures on Glass 691
J. Nishii
Nat. Inst, ofAdvanced Ind. Sci. & Tech., Japan
FMC11 - 2 Design, Fabrication and Characteristics of
Binary Gratings Consisting of Silica Glass695
T. Nakazawa, K. Oya', S. Kittaka,K. Tsunetomo, K. Kintaka", J. Nishii",K. Hirao"*
Nippon Sheet Glass, Japan'New Glass Forum, Japan"Nat. Inst, of Advanced Ind. Sci. & Tech.,
Japan'"Kyoto Univ., Japan
FMC11 - 3 Brightness Enhancement in TransflectiveAMLCDs by Using Micro-Lens Arrays
699
J. Bruin ink, D.K.G. de Boer, H. J. Cornelissen,M. Creusen*
Philips Res. Labs., The Netherlands
'Philips Mobile Display Syss., The Netherlands
FMCp - 5 New Rubbing Cloths for Reliable AlignmentProcess to Manufacture Advanced LCDs
719
T. Inoue, H. Tabira, Y. Hirota*, K. Nishiguchl*Hitachi, Japan'Hayashi Telempu, Japan
FMCp - 6 Withdrawn
FMCp - 7 The Optical Simulation Analysis and ActualMaterial Test of a High Brightness Prism
Light-Guide Plate for BacklightingTransmisslve LCDs 727
D. K. Yoon, J. M. Han, Y. S. Oh, K. W. Bae,Y. H. Kim, Y. J. Lim
BOE-HYDIS Tech., Korea
FMCp- 8
FMCp- 9
The Electric-Optical Characteristics of
Backlight Unit with LED Light Source
.731
M. S. Lee, D. S. Park, Y. S. Oh, J. M. Han,K. W. Bae, K H. Kim, Y. J. Lim
BOE-HYDIS Tech., Korea
Direct LED Backlight System Using NovelHigh-Refractive Polymer 735N. Harada, I. Suehiro, Y. Hotta
Nltto Denko, Japan
13:30-16:30 Exhibition Hall B
FMCp-10 Withdrawn
FMCp -11 Super Bright Backlighting System for Gen. 6LCD Panel Visual Inspection System
743
K. K. Lee, S. Lim*
GLDTEK, Korea
'Damkook Univ., Korea
FMCp -12 Inductively Coupled Plasma Etch Process of
Al203 Films for the Fabrication of Very Low
Temperature Poly-SI TFTs on a PlasticSubstrate 747
S. J. Yun, K.-H. Kwon*, D.-W. Kim, J. W. Lim,Y.-H. Kim, C.-H. Chung, D. J. Park, J.-H. Lee
ETRI, Korea"Hanseo Univ., Korea
Poster FMCp: FPD Manufacturing, Materials & Components
FMCp -1 P-Type SrCu202 Thin Film Prepared byReactive Thermal Co-Evaporation 703
A. Uemura, E. Noma, K. Saiki, H. Ohnishi
Ehime Univ., Japan
FMCp - 2 Transfer-Film Technology to Eliminate
Color-Mixing Problem of Inkjet TechnologyUsed in Color Filter Manufacturing 707F.-L. Hsu, Y.-C. Lo, H.-A. Li, C.-C. Chien
Chunghwa Picture Tubes, Taiwan
FMCp - 3 Research of Coating PI Alignment-Film byUsing Ink-Jet Technology 711H.-A. Li, Y.-C. Lo, K.-H. Chen, C.-C. Chien,F.-L. Hsu
Chunghwa Picture Tubes, Taiwan
FMCp - 4 Laser Absorption Spectroscopy of TernaryGas Mixture of He-Ne-Xe in External
Electrode Fluorescent Lamp (EEFL)715
J. H. Lee, P. Y. Oh, J. Y. Lee, J. W. Hong,G. S. Cho, E. H. Choi
Kwangwoon Univ., Korea
.751FMCp -13 Plasma-Resistant Glass
K. Aral, S. Hashimoto, T. Takahata
Tosoh, Japan
FMCp - 14L Investigation on High-Density Plasma Etchof the FPD Process with the ImpedanceMeter 755
T. C. Tsai, H. W. Wei, Y. H. ChenERSO/ITRI, Taiwan
FMCp - 15L Improvement of Photoresist in MVA Modefor TFT-Based 757
S. H. Yang, H. S. Koo, D. Y. GoangAllied Material Tech., Taiwan
FMCp - 16L Development of Overcoating Technology inColor Filters 759H. C. Wu, H. S. Koo, D. Y. GoangAllied Material Tech., Taiwan
FMCp - 17L Novel Technology for Fabricating New-TypeColor Filter In TFT-LCD 761
H. C. Wu, Y. C. Chen, H. S. Koo, D. Y. GoangAllied Material Tech., Taiwan
XVI IDW '04
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TABLE OF CONTENTS
FMCp - 18L Inkjet Printing for Fabricating Color Filter inTFT-Based LCD 763V. 7". Liu, H. S. Koo, L T. Chou, S. J. Chang;F. M. Wu*, D. Y. GoangAllied Material Tech., Taiwan*ITRI, Taiwan
FMCp - 19L Magnification Compensating 0.4 urnExposure System for Peripheral ICs 765A. R. Nobari, F. Clube, M. Jorda, S. Mourgue,S. Inoue, C. Iriguchi, E. Grass, H. MayerHoltronic Tech., Switzerland
'Seiko-Epson, Japan"Microfab, Liechtenstein
FMCp - 20L Application of Cleanness Cooling Tower forthe Semiconductor Fab 767
H.-C. Huang, W.-Q. Peng, L.-S. Fu*
ERSO/ITRI, Taiwan
'Growing Up Eng. Consult., Taiwan
Workshop on CRTs
Thursday, December 99:00-9:05 Room 302
Opening
9:00
Opening RemarksS. Shirai, Workshop Chair
9:05-10:15 Room 302
CRT1: For the Revival of CRT
CRT1-1: Invited CRT Industry, Time to Fight Back,771
H.-Y. Chen
Chunghwa Picture Tubes, Taiwan
CRT1 - 2: Invited Recent Developments and Prospectson Glass Technology for Still BrightlyShining CRTs 775
T. SugawaraAsahi Glass, Japan
CRT1 - 3 A New Self-Converging System withCombination of Magnetic Lens and UniformHorizontal Deflection Field 779
H. Sakurai, E. TagamiMatsushita Toshiba Picture Display, Japan
10:30-12:30 Room 302
CRT2: Masks & Screens
CRT2 -1 Robust CRT Shadow Mask OptimizationUsing an Integral Meta-Modeling Approach
783
J. van derHeijden, A. Grubben, P. Martens,T. SpanjerLG.Philips Displays, The Netherlands
CRT2 - 2 Study of AK Shadow Mask with Material
Coating for Flat CPTs 787
S. M. Kim, P. S. Jeong, J. Y. Kim, N. J. Koh,S. Y. Park, J. C. Park, J. £ Choi
LG.Philips Displays, Korea
CRT2 - 3 An Improved Microphony Measurement
System for CRTs 791
J. H. Kim, K. D. Ha
Samsung SDI, Korea
CRT2 - 4 Analysis of Mis-Landing Caused byIncreased Beam Current in Color CRTs
795
K. Ohta, Y. WadaMatsushita Toshiba Picture Display, Japan
CRT2 - 5 Heat Transfer Analysis of New Coolant foran Optical Engine 799M. Liu, C.-C. Chen, l.-H. Yen, C.-L Liu,C.-N. Mo, S.-T. Yang
Chunghwa Picture Tubes, Taiwan
CRT2 - 6L Screening of Color Phosphor Powders onCRT Faceplate for Flicker-Less Images
803L. Ozawa, M. Itoh*L. L. Tech., USA
'Shinshu Univ., Japan
14:00-15:20 Room 302CRT3: Deflection Yokes
CRT3 -1 Magnetic Ring for ConvergenceImprovement in Rectangular Shaped DYs
805
/. H. T. Fierkens
LG.Philips Displays, The Netherlands
CRT3 - 2 A High-Efficiency Velocity Modulation
System for Color CRTs 809K. Taniwa, A. Sato, K. Iwasaki
Matsushita Toshiba Picture Display, Japan
CRT3 - 3 Minimization of Acoustic Noise from
Deflection Yokes 813
J. W. Nam, S. G. Hwang
Samsung SDI, Korea
CRT3 - 4 A Deflection Yoke for Projection TV withReduced Geometrical Distortion 817
T. Yoshinaga, K. IwasakiMatsushita Toshiba Picture Display, Japan
15:40-17:00 Room 302
CRT4: Cathodes & Getters
CRT4 -1: Invited Centennial of the Oxide Cathode
821D. den Engelsen, G. Gaertner*
LG.Philips Displays, The Netherlands
'Philips Res. Labs., Germany
CRT4 - 2 Lifetime Improvement of the Bimetal Oxide-
Coated Cathode 825
J.-L. Ricaud, F. Poret, J.-M. RoquaisThomson, France
CRT4 - 3: Invited The Behavior of Ba-Films in Color
CRTs 829
D. den Engelsen, B. Ferrario*
LG.Philips Displays, The Netherlands'Saes Getters, Italy
CRT4 - 4 A Study of Correlation between ResidualGas and Emission Life 833
Y. Hayashida, S. NakagawaMatsushita Toshiba Picture Display, Japan
IDW '04 XVII
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TABLE OF CONTENTS
Wednesday, December 813:30 -16:30 Exhibition Hall B
Poster CRTp: CRTs
CRTp -1 A Screen-Printed Cathode with Acicular
Conductive Particles 837
T. W. Kim, J. S. Choi, S. K. Kim, T. M. Jo,
Y. J. Youn, H. C. Kim
Samsung SDI, Korea
CRTp - 2 Mathematical Approach to Emission and
Cutoff Degradation in CRTs 841
£ M. Weon
LG.Philips Displays, Korea
CRTp - 3 Reducing the Number of Focusing Grid
Pieces of Mini-Neck CRT Gun 845
C. T. Chan, W. N. Chang*, C. H. Yeh*,P. H. Chong, C. C. Chao
Chunghwa Picture Tubes, Malaysia
'Chunghwa Picture Tubes, Taiwan
CRTp - 4 Optimized Mask & Frame Structure for
Improving the Anti-Doming Performance in
CRTs 849
N. J. Koh, P. S. Jung, J. E. Choi, S. Y. Park,J. C. Park
LG.Philips Displays, Korea
CRTp - 5 Reduction of Phosphor Aging Time in
Projection CRT 853L. C. YangCPTF Optronics, China
Workshop on Plasma Displays
Wednesday, December 813:30-14:50 Marine Hall
PDP1: Discharge Mechanism
PDP1 -1: Invited In Celebration of 40 Years of PDP
History 859
L F. Weber
Consultant, USA
PDP1 - 2 Electron Density and Temperature Profilesof Striated Plasma in an AC PDP-LIke
Discharge 863
S. Hassaballa, K. Tomita, Y-J. Kim,Y. Yamagata, Kiichiro. Uchino, H. Hatanaka*,Y. M. Kim*, S. E. Lee*, S. H. Shon*, S. H. Jang*Kyushu Univ., Japan
Samsung Advanced Inst, of Tech., Korea
PDP1 - 3 Three-Dimensional Fully Kinetic Simulations
of the Discharge Pulse in an AC PDP Cell
867
V. P. Nagorny, V. N. KhudlkPlasma Dynamics, USA
PDP1 - 4 Analysis of Micro-Discharge with Long
Discharge Path in AC PDP Based on ICCDObservation 871
J. Y. Kim, H. Kim, B. S. Kim, H.-S. Tae,
J.-H. So*, S. -H. Lee, S. H. Jang*",Y. M. Kim***
Kyungpook Nat. Univ., Korea*lncheon Univ., Korea
"Inha Univ., Korea
'"Samsung Advanced Inst, of Tech., Korea
15:10-16:30 Marine Hall
PDP2: Cell Structure & Materials
PDP2 -1: Invited A 34-in. Diagonal PDP with Metal
Barrier Rib 875
B. Wang, X. Zhang, Q. Li, Y. Tang, Y. Tu,
J. Xia, Y. Zheng, Z. Fang, H. Yin, L. TongSoutheast Univ., China
PDP2 - 2 Improvement in Address Discharge
Response with Stripe Ribs and DischargeDeactivation Films 879
S. Nagano, K. Sano, K. Hirose, S. Makino
Mitsubishi Elec, Japan
PDP2 - 3 Defects in Vacuum Evaporated MgO Thin
Films Observed by Cathodoluminescence
Analysis 883
T. Hirakawa, H. Uchllke
Saga Univ., Japan
PDP2 - 4 Hybrid Protective Layer with ZnO Nanowlres
for AC PDPs 887
S. H. Yoon, Y. S. Kim
Honglk Univ., Korea
16:50-17:50 Marine Hall
PDP3: Components
PDP3 -1: Invited Recent Trends and Issues for LargeSize PDPGIass Substrates 891
H. Ishikawa, K. Maeda, Y. AsanoAsahi Glass, Japan
PDP3 - 2 Front Filter Directly Applied on Panel
Surface without Air Gap 895T. Oishi
Pioneer, Japan
PDP3 - 3 PDP Scan Driver IC with Smart Gate
Controlled IGBTs 899
H. Kobayashi, H. Sumlda, A. Fukuchi,H. Shimabukuro, Y. Shigeta, G. Tada
Fuji Elec. Device Tech., Japan
Thursday, December 910:40-12:10 Room 301
PH2/PDP4: Phosphors for PDPs
PH2/PDP4 -1: Invited Degradation Mechanism of
BaMgAI10O17:Eu2+ (BAM) Blue Phosphor for
PDPs 1077
S. Fukuta, T. Onimaru, T. Misawa, K. Saklta,S. Kasahara, K. Betsui
Fuptsu Labs., Japan
PH27PDP4 - 2 Luminescent and Aging Caracteristlcs ofTest-PDP Panel Using Gd-Codoped
CaMgSI206:Eu2+ Phosphors 1081T. Kunimoto, S. Yamaguohi*, K. Ohm!*,H. KobayashiTokushima Bunrl Univ., Japan'Tottori Univ., Japan
PH2/PDP4 - 3 Thermal Quenching of the Blue Phosphorsfor Plasma Display Panels 1085N. Tanamachi, K. Egoshl, H. Tanno, Q. Zeng,S. ZhangDaiden, Japan
XVIII IDW '04
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TABLE OF CONTENTS
PH2/PDP4 - 4 A New Synthesis of Germanate Phosphor forPDP Application 1089J. H. Kim, I. K. Choi, Y. C. You, D. S. ZangSamsung SDI, Korea
9:00-10:20Friday, December 10
PDP5: Addressing
Snow Hall B
PDP5 -1: Invited Technology for the World Largest80-ln. Full-HD PDP 905
E.Heo
Samsung SDI, Korea
PDP5 - 2 New Reset While Address (RWA) DrivingScheme for Single Scan of XGA Grade ACPDP with High Xe Content 909B.-G. Cho, H.-S. Tae
Kyungpook Nat. Univ., Korea
PDP5 - 3 Bipolar Scan Driving Scheme for High-Speed Address in AC PDP 913S.-K Jang, K.-H. Park, H.-S. Tae
Kyungpook Nat. Univ., Korea
PDP5 - 4 Improvement of the Discharge Time Lag ofAddress Pulse in AC PDP with High XeContent 917
S. H. Lee, K. S. Lee, S. Y. Park, B. J. Shin,K. C. Choi
Sejong Univ., Korea
10:40-11:40 Snow Hall B
PDP6: Driving Methods
PDP6 -1: Invited Exciting Developments in Plasma
Displays 921H. Tolner
PDP Consultant, The Netherlands
PDP6 - 2 A New High Contrast and High Speed Reset
Waveform 925
D. C. Jeong, K.-W. WhangSeoul Nat. Univ., Korea
PDP7 - 3 Light and Flexible Plasma Tube Array withFilm Substrate 941
K. Shinohe, Y. Yamazaki, A. Tokai,H. Hirakawa, H. Yamada, M. Ishimoto,K. Awamoto, T Shinoda
Fuptsu Labs., Japan
14:00 -17:00 Exhibition Hall B
Poster PDPpI: Cell Design
PDPpI -1
PDPpI - 2
PDPpI - 3
PDPpI - 4
PDPpI - 5
Discharge and Luminous Characteristics ofAC PDPs with a Grooved Front Dielectric
Layer 945S. J. Yoon, I. Lee, O. D. Kim, J. H. Jeong,J. R. Lim, K. Y. Choi
LG Elect, Korea
Characteristics ofAC PDP with Box Shaped
Apertures in Transparent Dielectric Layer949
M. H. Nam, S. H.Son*, Y. M. Kim*, B. S. Kim, S.
Y. Choi
Kyungpook Nat. Univ., Korea
'Samsung Advanced Inst, of Tech., Korea
Effects of Barrier Rib Height and Electrode
Geometry on Discharge Characteristics ofAC PDPs 953
E.-Y. Jeong, J.-C. Ahn, K.-D. Kang, H.-S. Yoo,E.-G. Heo, W.-J. Yi, K.-S. Lee, J. -Y. Park,S. -B. Song, H. -Y. Lee
Samsung SDI, Korea
Effects of Priming Particles on the
Discharge Mode in AC PDP Driven by RampVoltage Waveform 957
D. K. Lee
Pusan Univ., Korea
,961
PDP6 - 3 Study on Reset Discharges in AC PDPs
.929
B. J. Shin, K. C. Choi
Sejong Univ., Korea
12:20-13:30
Outstanding Poster Paper Awards at Exhibition Hall B
14:00-15:00 Snow Hall B
PDP7: Novel PDPs
PDP7 -1: Invited A Technology Roadmap for
Developing Large Capacity Electronic
Display Fabrics 933
R. Johnson
Info. Tech., USA
PDP7 - 2 Discharge Characteristics of a New
Structure AC PDP Using Thick Film CeramicSheet Technology 937
S. Mori, S. Ajisaka, A. Oku, K. Ikesue, S. Mori,K. Tanaka, H. Asai, N. Kikuchi, S. Sakamoto
Noritake, Japan
Effect of Subpixel Aspect Ratio onLuminous Efficiency of AC PDPsH. S. Bae, T. J. Kim, K.-W. WhangSeoul Nat. Univ., Korea
14:00-17:00 Exhibition Hall B
Poster PDPp2: Discharge Mechanisms
PDPp2 -1 Temporal Image Sticking Phenomena in ACPDP with Large Sustain Gap 965J.-W. Han, B.-G. Cho, K.-H. Park, J. Y. Kim,H.-S. Tae, S.-l. Chien, B. J. Shin*
Kyungpook Nat. Univ., Korea'Sejong Univ., Korea
PDPp2 - 2 Three-Dimensional Measurement of Electron
Temperature and Plasma Density in
Coplanar AC PDP 969
M. W. Moon, W. a Park, Y. H. Seo, G. S. Cho,
E. H. Choi
Kwangwoon Univ., Korea
IDW '04 XIX
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TABLE OF CONTENTS
PDPp2 - 3 Influence of Sustain Electrode Gap on 1s5Metastable Xenon Detected with Laser
Absorption Spectroscopy inAC PDP 973
P. Oh, H. Lee, H. Moon*, K. Park", J. Ahn*",
J. Hong, W. Jeon, G. Cho, E. Choi
PDP Res. Ctr. /Kwangwoon Univ., Korea*Ctr. for Info. & Telecommun. Standards,
Korea Res. Inst, of Standards & Sci., Korea
"BOE-HYDIS Tech., Korea
'"Samsung SDI, Korea
PDPp2 - 4 Improvement of Luminous Efficacy In AC
PDP with Open Dielectric Structure
.977
D.-S. Lee, J. -O. Ok, H.-J. Lee, H.-J. Lee,
D.-H. Kim, C.-H. ParkPusan Univ., Korea
PDPp2 - 5 Analysis of Discharge Phenomena in AC
PDP with Coplanar Long-Sustain Gap and
Auxiliary Electrode 981
S. D. Park, N. H. Shin, B. J. Shin, K. C. Choi
Sejong Univ., Korea
PDPp2 - 6L Discharge Initiation of Barrier Discharge in
PDP Model-Cell 985
Y. Kashiwagi, A. Yamaguchi, S. Suzuki',H. Itoh*
Klsarazu Nat. College of Tech., Japan'Chiba Inst, of Tech., Japan
14:00 -17:00 Exhibition Hall B
Poster PDPp3: Discharge Gases
PDPp3 -1 A Study of New Penning Gas for the
Improvement of Luminance and Luminous
Efficiency In AC PDP 987S.-O. Kwon, H.-J. HwangChung-Ang Univ., Korea
14:00 -17:00 Exhibition Hall B
Poster PDPp4: Driving Methods
PDPp4 -1 New Address Waveform for Improvement of
the Priming Effect and Contrast Ratio in AC
PDPs at Address Period 1003
J. S. Kim, B. K. Joung, H. J. Hwang
Chung-ang Univ., Korea
PDPp4 - 2 An Error Diffusion Technique with ReducedArtifacts for Representation of Gray LevelsIn Dark Areas on PDP 1007
Y. H. Kim, C. W. Kim
Inha Univ., Korea
PDPp4 - 3 Analysis of Driving Method for Long Gap
Discharge by Using Vth Close Curve in ACPDP 1011
M. S. Kim, W. J. Kim, K. D. Cho, K. J. Jeong,S. I. Lee, Y. C. Choi, K. R. Shim, B. H. Kim,S. H. Kang, J. H. RyuLG Elect, Korea
PDPp4 - 4 High Speed Addressing Method for AC PDPs
Using Wall Charge Acceleration Pulse1015
J.-Y. Kim, J.-Q. Bae, l.-M. Lee
Sejong Univ., Korea
PDPp4 - 5 A Novel Discharge AND-Gate PDP forRetrenchment of Circuitry CostJ. RyeomKyongju Univ., Korea
1019
14:00-17:00 Exhibition Hall B
Posfer PDPp5: MgO
PDPp3- 2 Spatiotemporal Behaviors of Excited KrAtoms in Kr-Ne Gas Mixtures AC PDP
.991
J.-S. Oh, S. Kawai, O. Sakai, H. Hatanaka*.Y.-M. Kim*, K. Tachibana
Kyoto Univ., Japan
'Samsung Advanced Inst, of Tech., Korea
PDPp3 - 3 Influence of Binary and Ternary GasMixtures of (He.Ne)-Xe on the VacuumUltraviolet Luminous Efficiency in AC PDPs
gg5
K a Jung, W. Jeon, W. B. Park, P. Y. Oh,J. H. Lee, G. S. Cho, H. S. Uhm', £ H. ChoiKwangwoon Univ., Korea
*Ajou Univ., Korea
PDPp3 - 4 Dependence of VUV Band Emission fromXe2* Dimers on Gas Pressure in Fine PitchAC PDP 999
K. Ishii, Y. Hirano, Y. Motoyama, Y. Murakami,K. Tachibana*
NHK, Japan'Kyoto Univ., Japan
PDPp5 -1 Oblique Ion-Induced Secondary ElectronEmission Coefficient and Work Function of
MgO Thin Film in AC PDPs 1023W. B. Park, H. S. Jeong, J. S. Oh*, K. B. Jung,W. Jeon, J. C. Jeong, J. E. Lim, H. J. Lee,G. S. Cho, E. H. Choi
Kwangwoon Univ., Korea
'Kyoto Univ., Japan
PDPp5 - 2 Influences of Degradation of MgO ProtectiveLayer and Phosphor on Ion-InducedSecondary Electron Emission Coefficientand Basic Discharge Characteristics in ACPDP 1027J. E. Lim, H. S. Jeong, W. B. Park, J. Y. Lim,K. B. Jung, £ H. ChoiKwangwoon Univ., Korea
PDPp5 - 3 Work Function Change on MgO ProtectiveLayer after RF Plasma Treatment Using Ar,02, and H2 Gases 1031J. C. Jung, H. S. Jeong, W. B. Park, E. H. Choi,J. Cho
Kwangwoon Univ., Korea
14:00-17:00 Exhibition Hall BPoster PDPp6: Manufacturing Processes
PDPp6 -1 PDP Margin Voltage Inspection Using ImageProcessing Method 1035W.-C. Tal, C.-J. Lin, C.-L. Liu, C.-N.. Mo,S.-T. YangChunghwa Picture Tubes, Taiwan
XX IDW '04
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TABLE OF CONTENTS
PDPp6 - 2 Characteristics of PDP with ReflectionLayers of High Thermal Conductivities
1039
D. Y. Park, Y. S. Kim, S. E. Lee', Y. M. Kim*Hongik Univ., Korea'Samsung Advanced Inst, of Tech., Korea
PDPp6 - 3 Semi-Closed Discharge Cells for PDP withCapillary Molding Process 1043T. J. Chang, K. I. Kim, Y. S. Kim
Hongik Univ., Korea
PDPp6 - 4 Consideration of Compositions andProperties of Transparent Dieletrics forPDPs 1047
J. S. Park, S. M. Han, J. H. Hwang, T Y. Lim,C. Y. Kim, M. Takaki*Korea Inst, of Ceramic Eng., Korea*Halla Univ., Korea
PDPp6 - 5 Withdrawn
14:00 -17:00 Exhibition Hall B
Poster PDPp7: Discharge Simulation
PDPp7 -1 Effect of Bus Electrode Position on
Discharge and Luminous Characteristics ofAC PDPs 1055
/. Lee, S. J. Yoon, O. D. Kim, K. Y. Choi
LG Elect, Korea
PDPp7 - 2 Performances of an AC PDP Cell withCounter Sustain-Electrodes and an AuxiliaryElectrode for Versatile Driving Schemes
1059
S. Kawai, K. Tachibana, J. S. Oh, H. Asai*,N. Kikuchi*, S. Sakamoto*
Kyoto Univ., Japan'Noritake, Japan
Workshop onEL Displays, LEDs and Phosphors
Thursday, December 99:00-10:20 Room 301
PH1:ELDs
10:40-12:10 Room 301
PH2/PDP4: Phosphors for PDPs
PH2/PDP4 -1: Invited Degradation Mechanism of
BaMgAI10017:Eu2+ (BAM) Blue Phosphor forPDPs 1077
S. Fukuta, T. Onimaru, T. Misawa, K. Sakita,S. Kasahara, K. Betsui
Fujitsu Labs., Japan
PH2/PDP4 - 2 Luminescent and Aging Caracteristics ofTest-PDP Panel Using Gd-CodopedCaMgSi208:Eu2+ Phosphors 1081T. Kunimoto, S. Yamaguchi*, K. Ohmi*,H. KobayashiTokushima Bunri Univ., Japan'Tottori Univ., Japan
PH2/PDP4-3 Thermal Quenching of the Blue Phosphorsfor Plasma Display Panels 1085N. Tanamachi, K. Egoshi, H. Tanno, Q. Zeng,S. ZhangDaiden, Japan
PH2/PDP4 - 4 A New Synthesis of Germanate Phosphor forPDP Application 1089J. H. Kim, I. K. Choi, Y. C. You, D. S. ZangSamsung SDI, Korea
14:00-15:10 Room 301
PH3: ELDs
PH3 -1: Invited Large-Screen Flat-Panel DisplaysBased on TDEL Technology 1093
X. Wu
iFire Tech., Canada
PH3 - 2 Blue-Emitting Ba2SiS4:Ce Thin-FilmElectroluminescent Devices Prepared byElectron-Beam Evaporation 1097S. Usui, Y. Samura, K. Ohmi, H. Kobayashi*Tottori Univ., Japan'Tokushima Bunri Univ., Japan
PH3 - 3 New and Improved Electroluminescent Ink
Systems 1101A Buchholz, M. LewandowskiAcheson Colloids, USA
PH1 -1: Invited The Inorganic ElectroluminescentStudies in Tottori University - in Memory ofProfessor Tanaka - 1065
H. KobayashiTokushima Bunri Univ., Japan
PH1 - 2: Invited Sphere-Supported Thin-Film EL
Technology 1069A.-H. Kitai, Y. Xiang, M. Bulk, B. Cox
McMaster Univ., Canada
PH1 - 3 Defect Density Results of Successful
Scaling of TDEL Display from 17" to 34"
1073
H. Abe, I. Yoshida, H. Hamada, P. Balmforth*,M. Kutsukake"
Sanyo Elec, Japan'iFire Tech., Canada
"Dai Nippon Printing, Japan
15:30-16:20 Room 301
PH4: Phosphors for LEDs
PH4 -1: Invited a-SiAION-Based Oxynitride/NitridePhosphors: Synthesis, Properties and
Applications 1105R. J. Xie, N. Hirosaki, M. Mitomo, Y. Yamamoto,T. Suehiro, K. Sakuma*
Nat. Inst, for Materials Sci., Japan
'Fujikura, Japan
PH4 - 2 Enhancement of Absorption Around 400 nmin Bi-doped Y203:Eu Red Phosphors for UVLEDs 1109
R. S. Liu, C. C. Kang, L. S. ChiNat. Taiwan Univ., Taiwan
IDW'04 XXI
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TABLE OF CONTENTS
Friday, December 1010:40-11:50 Room 302
FED2/PH5: FEDs and Phosphors for FEDs
FED2/PH5 -1: Invited Development of Field Emission
Display 1189S. /to/7
Futaba, Japan
FED2/PH5-2 Novel Display Panel Utilizing Field Effect-Ferroelectric Electron Emitters 1193
Y. Takeuchi, T. Nanataki, I. OhwadaNGKInsulators, Japan
FED2/PH5 - 3 Eu*+ Doped A2A'(B03)2 (A=Ba,Sr, A'=Mg,Ca)Phosphor Thin Films Prepared by PulsedLaser Deposition Technique 1197M. Mlzumo, T Kunimoto*, K. Ohmi,H. Kobayashi*Tottori Univ., Japan'Tokushima Bunri Univ., Japan
Wednesday, December 813:30 -16:30 Exhibition Hall B
Poster PHp: EL Displays, LEDs and phosphors
PHp -1 High Brightness Warm-White LED LampsUsing Ca-a-SiAION Phosphors 1115K Sakuma, N. Hirosaki*, N. Kimura,Y. Yamamoto*, R.-J. Xie*, T. Suehiro*,K. Omichi, M. Ohashl, D. Tanaka
Fujikura, Japan*Nat. Inst, forMaterials Sci., Japan
PHp - 2 Surface Modification and Low VoltageCathodolumlnescence of SrTI03:Pr, Al, Ga
Phosphor 1119J. H. Kang, J. Y. Kim*, D. Y. Jeon,S. A. Bukesov"
KAIST, Korea
'Samsung Advanced Inst, of Tech., Korea"Seoul Semiconductor, Korea
PHp - 3 Study on YAG:Ce and TAG:Ce Phosphorsfor the Application to White-Emitting LightSource Using Blue-Emitting LEDs 1123H. S. Jang, W. B. Im, D. C. Lee, J. H. Kang,D. Y. Jeon
KAIST, Korea
PHp - 4 Crystalline Analysis and LuminescentProperties of ZnS:Mn Phosphor Thin FilmsPrepared with Nano-Particles 1127S. Okamoto, K. Tanaka, S. Kuzue*,K. Takizawa*
NHK, Japan'Seikei Univ., Japan
PHp - 5 Photoluminescent Properties and LocalStructural Analysis of ZnS:Mn2+ NanocrystalPhosphors Modified with 2- Mercaptoethanol
1131
E Nakamura, T. Isobe, T. Nakano*,M. Ishitsuka*, M. Saito*
Keio Univ., Japan'Sumitomo Osaka Cement, Japan
PHp - 6 Thin-Film Phosphor Development UtilizingCombinatorial Deposition by r.f. Magnetron
Sputtering Using a Subdivided Powder
Target 1135T. Minami, Y. Mochizuki, T. Miyata, K. IharaKanazawa Inst, of Tech., Japan
PHp - 7 High-Luminance Red-Emitting TFEL DevicesUsing Eu-Activated (GauOa^-fSnOaJx ThinFilms Prepared by PLD 1139T. Miyata, Y. Minamino, T. MinamiKanazawa Inst, of Tech., Japan
PHp - 8 Evaluation of Rare Earth-Doped Zn-Y-0Powders Synthesized by Citric Acid GelMethod 1143
K. Takebayashl, H. Kominami, Y. Nakanishl,Y. Hatanaka*
Shizuoka Univ., Japan'Aichi Univ. of Tech., Japan
PHp - 9 Structural Properties and ConductionControl of ZnMgO Thin Film by Oxidizationof Sulfide on SI Substrates 1147
K. Ohara, T. Harakawa, T. Selno*.A. Nakamura, T. Aoki, H. Kominami,Y. Nakanishl, Y. Hatanaka"Shizuoka Univ., Japan'Japan Steel Works, Japan"Aichi Univ. of Tech., Japan
PHp -10 Luminescent Properties of Tb3+ SubstitutedYAG:Ce,Gd Phosphors 1151Y. S. Lin, R. S. Liu, B.-M. Cheng', H. Y. Su"Nat. Taiwan Univ., Taiwan
*Nat. Synchrotron Radiation Res. Ctr„ Taiwan"Llte-On Tech., Taiwan
PHp -11 Effect of X-Ray Irradiation on DopedEuropium in BaMgAI10O17 Studied by X-rayAbsorption Fine Structure 1155/. Hirosawa, T. Honma, K. Kato, N. Kijima*,Y. Shimomura**
Japan Synchrotron Radiation Res. Inst, Japan'Mitsubishi Chem., Japan"Kasei Optonix, Japan
PHp -12 Photoluminescent Characteristics of NewYttrium Aluminophosphate Phosphorsunder VUV Excitation 1159J. H. Kang, W. B. Im, D. Y. JeonKAIST, Korea
PHp -13 Blue-Emitting MAI2Si208:Eu2+(M=Ca, Ba)Phosphor for PDP Application 11630W. B. Im, J. H. Kang, D. Y. JeonKAIST, Korea
PHp - 14L Effect on Deoxldatlon of Doped Europium inOxidized BaMgAI10O17 Studied by XAFS
1167T. Honma, I. Hirosawa, Y. Shimomura*,N. Kijima*, H. Yamamoto**
Japan Synchrotron Radiation Res. Inst, Japan'Mitsubishi Chem., Japan"Tokyo Univ. of Tech., Japan
XXII IDW '04
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TABLE OF CONTENTS
Workshop on Field Emission Display
Friday, December 109:10-9:20 Room 302
Opening
9:10
Opening RemarksM. Takai, Workshop Chair
9:20-10:20 Room 302
FED1: FEDs and Novel Devices
FED1 -1 A 4-ln. QVGA AMCNT-FED Driven by HighVoltage LTPS-TFTs 1171H.-Y. Tseng, Y.-W. Wang, C.-M. Chen,C.-Y. Huang, S.-S. Sheu, W.-Y. Lin, C.-T. Lee,T.-H. Chen, P.-S. Wu, Y.-H. Yeh, C.-C. Lee
ERSO/ITRI, Taiwan
FED1 - 2 Improvement of Emission and FocusingCharacteristics for CNT-FED 1175
S. Watanabe, T. Shiroishi, A. Hosono,S. Nakata, K. Nishimura, T. Sawada,M. Fujikawa, T. Yamamuro, Z. Shen, F. Abe,S. Okuda, K. Oono, Y. Hlrokado, A. Inoue,M. Inumochi
Mitsubishi Elec, Japan
FED1 - 3 Withdrawn
FED1 - 4 Flat Lamp Fabrication Using Double-WalledCarbon Nanotubes Synthesized by ThermalCVD 1183
Y.-D. Lee''*", H. J. Lee', S. I. Moon',H.-S. Hwang", J. H. Han", J.-E. Yoo",Y.-H. Lee*", S. Nahm*", B.-K. Ju**KIST, Korea
"lljin Nanotech, Korea'"Korea Univ., Korea
FED1 - 5L Luminance Uniformity for Spindt Type FieldEmission Displays 1187S. Kumagai, Y. Hatano
Sony EMCS, Japan
13:35-15:15 Room 302
FED3: FE Materials and Emission Characteristics (1)
FED3 -1: Invited Laser Irradiation to CNT Cathodes
for Large Diagonal FEDs 1201
K. Murakami, W. Rochanachirapar,N. Yamasaki, S. Abo, F. Wakaya, M. Takai,A. Hosono*, S. Okuda*
Osaka Univ., Japan'Mitsubishi Elec, Japan
FED3 - 2 Enhanced Electron Emission from the CNT
Grown with a SiNx Capping Layer 1205S. H. Lim, K. C. Park, J. H. Moon, B. K. Choo,H. S. Yoon, D. Pribat*, J. JangUniv. of Kyung Hee, Korea'Ecole Polytech., France
FED3 - 3 Measurement of Field Emission
Characteristics of Laser Irradiated Carbon
Nanotubes 1209
Y. Gotoh, V. Kawamura, K. Ishizu, H. Tsuji,J. Ishikawa, S. Nakata*, S. Okuda*
Kyoto Univ., Japan'Mitsubishi Elec, Japan
FED3 - 4 Field Emission Properties from DifferentKinds of CNT Film 1213
C.-Y. Hsiao, Y.-A. Li, J.-L Tsai, K. Cheng,S.-H. Lee, P.-H. Chang, C.-H. Hsiao,W.-S. Hsu, J.-S. Fang, C.-C. Kuo, T.-F. ChanTECO Nanotech, Taiwan
FED3 - 5 Investigation of Graphite Nanofiber as anEmitter for FED 1217
M. Ushirozawa, K. Hagiwara, T. Sakai, T. Takei,T. Yamamoto, M. Hirakawa*, H. Nakano*,H. Murakami*, K. Okasaka", T. Sasaki"
NHK, Japan'ULVAC, Japan"ULVAC Coating, Japan
FED3 - 6 Self-Focused Gate Structure for Carbon
Nanotube Field Emitters 1221
Y.-H. Song, K.-B. Kim, S.-H. Lee, C.-S. Hwang,J. H. Lee, K.-Y. KangETRI, Korea
10:40-11:50 Room 302
FED2/PH5: FEDs and Phosphors for FEDs
FED2/PH5 -1: Invited Development of Field Emission
Display 1189S. Itoh
Futaba, Japan
FED2/PH5-2 Novel Display Panel Utilizing Field Effect-Ferroelectric Electron Emitters 1193
Y. Takeuchi, T. Nanataki, I. Ohwada
NGK Insulators, Japan
FED2/PH5 - 3 Eu2+ Doped A2A'(B03)2 (A=Ba,Sr, A'=Mg,Ca)
Phosphor Thin Films Prepared by Pulsed
Laser Deposition Technique 1197M. Mizumo, T. Kunimoto*, K. Ohmi,H. Kobayashi*Tottori Univ., Japan'Tokushima Bunri Univ., Japan
15:30-17:00 Room 302FED4: FE Materials and Emission Characteristics (2)
FED4 -1 HfC Coated Si-FEA with a Built-in Poly-SiTFT 1225
M. Nagao, Y. Sacho, S. Kanemaru,T. Matsukawa, J. Itoh
Nat. Inst, ofAdvanced Ind. Sci. & Tech., Japan
FED4 - 2 Effect of Thermal Annealing On LeakageCurrent of Field Emitters Fabricated UsingBeam Assisted Processes 1229
K. Murakami, N. Yamasaki, S. Abo, F. Wakaya,M. Takai
Osaka Univ., Japan
FED4 - 3 Effects of the Thermal Annealing on the
Field Emission Characteristics of an
Oxidized Porous Polysilicon Field Emitter
1233
S. K. Han, S. I. Kwon, S. C. Bae, S. Y. Choi
Kyungpook Nat. Univ., Korea
IDW '04 XXIII
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TABLE OF CONTENTS
FED4 - 4 Field Emission Energy Distributions fromSilicon Field Emitters 1237
H. Shimawaki, Y. Suzuki*, K. Sagae', Y. Neo",H. Mimura"
Hachinohe Inst, of Tech., Japan'Tohoku Univ., Japan"Shizuoka Univ., Japan
FED4 - 5 Boron Nitride Field Emitter on Patterned
Substrate 1241
C. Kimura, H. Shima, K. Okada, Y. Yamamuro,T. SuginoOsaka Univ., Japan
FED4 - 6 Reduction of the Work Function on Mo(100)Surface Covered with Zr02 1245H. Nakane, S. Satoh, H. Adachi
Muroran Inst, of Tech., Japan
OLED1 - 3 High Efficiency Top Emitting OLEDs on a-SiActive Matrix Backplanes with LargeAperture Ratio 1265J. Birnstock, J. Blochwitz-Nimoth, M. Hofmann,
M. Vehse, G. He*, P. Wellmann*, M. Pfeiffer*,and K. Leo'
Novated, Germany'Tech. Univ. Dresden, Germany
OLED1 - 4 Operating Physics and Newly Developed
Technologies of Higher Performance FullColor OLEDs Based on Color Conversion
Method 1269
K. Sakurat, H. Kimura, K. Kawaguchi,
M. Kobayashi, T. Suzuki, Y. Kawamura,H. Sato, M. Nakatani
Fuji Elec. Advanced Tech., Japan
15:00-16:25 Room 301
11:50-12:35 Room 302 OLED2: Material
FED5: FE Materials
FED5 -1L Emission Statistics for HfC Coated Poly-SiEmitter Arrays 1249D. Nicolaescu, M. Nagao, V. Filip*,S. Kanemaru, J. ItohNat. Inst, ofAdvanced Ind. Sci. & Tech., Japan'Univ. of Bucharest, Romania
FED5 - 2L Sandblast Activation of Carbon Nanotube
Cathodes 1251
R. L Fink, Y. J. Li, M. Yang, Z. Yaniv,S. Katanahara*
Appl. Nanotech, USA
'Alps Eng., Japan
FED5 - 3L Carbon Nanowalls for Field-Emission and
Light-Source Applications 1253N. Jiang*'", H. X. Wang', H. Hiraki*, M. Ohara',M. Haba*,A. Hiraki*'"
*Dialight Japan, Japan"Kochi Univ. of Tech., Japan
12:20-13:30
Outstanding Poster Paper Awards at Exhibition Hall B
OLED2 -1: Invited Phosphorescent OLEDs by OrganicVapor Phase Deposition 1273T. X. Zhou, B. D'Andrade, T. Ngo,S. R. Forrest*, M. Shteln', J. J. Brown
Universal Display, USA'Princeton Univ., USA
OLED2 - 2 Flexible Color OLED Display using WhiteLight-Emissive Layer based onPhosphorescent Polymers 1277M. Suzuki, T. Suzuki, T. Tsuzuki, S. Tokito,T. Kurita, F. SatoNHK, Japan
OLED2 - 3 Temperature Dependence of L and V ofOLED Devices 1281
E Young, S. Grabowskl*, H. Boerner*
Philips Res., The Netherlands'Philips Res., Germany
OLED2 - 4 Novel Mg:Alq3/W03 Connecting Layer forTandem White Organic Light EmittingDiodes (WOLEDs) 1285C.-C. Chang, S.-W. Hwang, H.-H. Chen,C. H. Chen, J.-F. ChenNat. Chiao Tung Univ., Taiwan
Workshop on Organic LED Displays16:40-18:05 Room 301
Wednesday, December 813:20-14:45 Room 301
OLED1: Panel
OLED1 -1: Invited Polymer OLED Television ImageQuality 1257C. N. Cordes, W. H. M. Van Beek, F. J. Vossen,A. A. M. Hoevenaars, R. G. H. Boom,N. C. van der Vaart, D. A. Fish*, M. J. Childs*Philips Res. Labs., The Netherlands*Philips Res. Lab., U. K.
OLED1 - 2 Development of Thin Film Passlvated 14.1"a-Si AMOLED 1261J. H. Jung, H. Kim, J. S. Lim, J. S. Rhee,S. P. Lee, N. D. Kim, J. W. Lee*, B. K. Ju*,K. Chung
Samsung Elect, Korea
*KIST, Korea
OLED3: Device Structure
OLED3 -1: Invited A Challenge to Material Design forHigh Performance OLED 1289K. Ueno, S. Okada, A. SenooCanon, Japan
OLED3 - 2 White Multi-Photon Emission OLED without
Optical Interference 1293M. Horll, Y. Jinde, S. Tanaka, A. Ogawa,Y. Kawakami,Y. Naito
Stanley Elec, Japan
OLED3 - 3 Very High-Efficiency Deep Blue OrganicLight-Emitting Devices Having a Carrier-Blocking Polymer Layer 1297A. Mikami, T. Koshiyama, T. TsubokawaKanazawa Inst, of Tech., Japan
XXIV IDW '04
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TABLE OF CONTENTS
OLED3 - 4 High Efficient Red Organic Light-EmittingDevices Having the Dotted-Line DopingStructure in an Alq3+Rubrene Mixed Host
Emitting Layer 1301C. M. Lee, D. I. Kim, J. W. Han
Sejong Univ., Korea
Thursday, December 99:00-10:25 Marine Hall
AMD2/OLED4: AM-OLED (1)
AMD2/OLED4-1: Invited High-Pertormance and Low-PowerAMOLED Using White Emitter with Color-Filter Array 259K. Mameno, R. Nishikawa, T. Omura,S. Matsumoto, S. A. Van Slyke*, A. D. Arnold*,T. K. Hatwar*. M. V. Hettel*. M. E. Miller*,M. J. Murdoch*, J. P. Spindler*Sanyo Elec, Japan*Eastman Kodak, USA
AMD2/OLED4-2 2.2-in. QVGA AMOLED with Current De-
Multiplexer TFT Circuits 263
Y. Matsueda, D. Y. Shin, K. N. Kim, D. H. Ryu,
a Y. Chung, H. K. Kim, H. K. Chung,O. K. Kwon*
Samsung SDI, Korea
'Hanyang Univ., Korea
AMD2/OLED4 - 3 Optical Cross Talk in AMOLED Displays with
Optical Feedback 267
A. Giraldo, W. Oepts, M. C. J. M. Vissenberg,D. A. Fish*, N. D. Young*
Philips Res. Labs., The Netherlands
'Philips Res. Labs., UK
AMD2/OLED4-4 Comparison of Driving Methods for TFT-
OLEDs and Novel Proposal Using Time
Ratio Grayscale and Current Uniformization
271
M. Kimura, Y. Hara, Y. Kubo, T. Akai, R. Saito
Ryukoku Univ., Japan
10:40-12:05 Marine Hall
AMD3/OLED5: AM-OLED (2)
AMD3/OLED5-1: Invited Solution for Large-Area Full-Color
OLED Television - Light Emitting Polymerand a-Si TFT Technologies - 275
T. Shirasaki, T. Ozaki, T. Toyama, M. Takei,
M. Kumagai, K. Sato, S. Shimoda, T. Tano,K. Yamamoto, K. Morimoto, J. Ogura,R. Hattori*
Casio Computer, Japan
'Kyushu Univ., Japan
AMD3/OLE05 - 2 A Novel Digital-Gray-Scale Driving Method
with a Multiple Addressing Sequence for
AM-OLED Displays 279
A. Tagawa, T. Numao, T. Ohba
Sharp, Japan
AMD3/OLED5 3 A 2.0-in. AMOLED Panel with Voltage
Programming Pixel Circuits and Point
Scanning Data Driver Circuits 283
N. Komiya, C. Y. Oh, K. M. Eom, Y. W. Kim,
S. C. Park, S. W. Kim
Samsung SDI, Korea
AMD3/OLED5 -4 A Simple Data Driver Architecture to
Improve Uniformity of Current-Driven
AMOLED 287
H. Y. Huang, W. T. Sun, C. C. Chen,J. C. Tseng, S. Hopf, C. F. Sung, C. H. Li,S. H. Li, J. C. Peng, Y. F. Wang, J. J. Lih,C. S. YangAU Optronics, Taiwan
13:30 -16:30 Exhibition Hall B
Poster AMD/OLEDp: Active-Matrix OLED
AMD/OLEDp 1 A Circuit for Testing TFT-Arrays of AMOLED
Displays519
D. Nakano, Y. Sakaguchi, K. Imura, A. Ohta
IBM Japan, Japan
AMD/OLEDp-2 Active Organic Light Emitting Diode Drive
Circuit 523
H.-R. Han*'", C.-C. Kuo*>**, W.-T. Liao*,
S.-T. Lo*, W.-C. Wang*'Wintek, Taiwan
"Nat. Chung Hsing Univ., Taiwan
AMD/OLEDp -3 A New AMOLED Pixel Driving Scheme
Employing VDD Line Elimination 527
W.-J. Nam, J.-H. Lee, S.-H. Jung, C.-W. Han,M.-K. Han
Seoul Nat. Univ., Korea
AMD/OLEDp -4 A New AMOLED Pixel Design CompensatingThreshold Voltage Degradation of a-Si:H TFT
and OLED 531
J. H. Kim, J.-H. Lee, W.-J. Nam, B.-H. You,M.-K. Han
Seoul Nat. Univ., Korea
AMD/OLEDp -5 Uniformity of AM-OLED Pixels Circuits
Using as-Deposited Polysilicon TFTs
Improved by Slicing Effect 535
A. Gaillard*'", T. Mohammed-Brahim',S. Crand*, R. Rogel*, C. Prat", P. Leroy""Univ. de Rennes 1, France
"Thomson Multimedia R&D, France
AMD/0LEDp-6L A New Voltage Driven Pixel Circuit for LargeSized AMOLED Panel 539
Y. J. Park, J. Huh, B. K. Kim, M. H. Jung,
O. H. Kim
Pohang Univ. of Sci. & Tech., Korea
AMD/OLEDp-7L The Suppression of the Threshold VoltageShift in a-Si TFT Pixel for AMOLED by
Employing the Reverse Bias Annealing541
J. H. Lee, C. W. Han, B. H. You, M. K. Han
Seoul Nat. Univ., Korea
14:00 -17:00 Exhibition Hall B
Poster OLEDp: OLED Poster
OLEDp -1 Organic Polymer Films Doped by Organic
Dyes for OLEDs 1307
V. Nakanishi*, L. Fenenko*'**, P. Smertenko"
'Shizuoka Univ., Japan
"V, E Lashkaryov (nst. of Semiconductor
Physics ofNASU, Ukraine
IDW '04 XXV
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TABLE OF CONTENTS
OLEDp - 2 Red Electrophosphorecence from
Polyactylene-Based Light Emitting Diode1311
Z L Xie, J. W. Y. Lam', H. J. Peng, M. Wong,B. Z. Tang*, H. S. KwokHong Kong Univ. of Sci. & Tech., Hong Kong
OLEDp - 3 Deep Blue Dopant for High PerformanceOLEDs and Color Purity 1315M.-T. Lee, C.-M. Yeh, C. H. ChenNat. Chiao Tung Univ., Taiwan
OLEDp - 4 Indole Based Compounds as Host Materialsfor Triplet Emitters in Organic Light EmittingDiodes 1319
M.-H. Ho, Y.-S. Wu, S.-F. Hsu, T.-Y. Chu,J. F. Chen, C. H. ChenNat. Chiao Tung Univ., Taiwan
OLEDp - 5 Effects of Double Buffer Layers on the
Optical Properties of White Organic LightEmitting Diodes 1323M. Yokoyama, G. T. Chen, S. H. Su, J. L. Kwo,S. L Fu
l-Shou Univ., Taiwan
OLEDp - 6 Highly Efficiect Photoresponsive OrganicLight-Emitting Devices with PhosphorescentMaterials 1327M. Chikamatsu; H. Konno', T Oosawa*'",M. Yamashita", Y. Yoshida*, K. Yase*'Nat. Inst, of Advanced Ind. Sci. & Tech., Japan"Tokyo Univ. of Sci., Japan
OLEDp - 7 Top Emitting OLEDs on Flexible Substrate1331
C.-S. Hwang, S.-H. Ko Park, S. M. Jeong,J. Y. Oh, M. Y. Yoon, J. I. Lee, Y. S. Yang,M. K. Kim, L M. Do, H. Y. ChuETRI, Korea
OLEDp - 8 White OLEDs with a Single Emissive Layer1335
H. Y. Chu, J.-l. Lee, Y.S. Yang, J. Y. Oh,S.-H. K. Park, M.-K. Kim, C.-S. Hwang,D.-H. Hwang, J. JangETRI, Korea
'Kumo Univ., Korea
"Kyung Hee Univ., Korea
OLEDp - 9 Improvement of Efficiency and Brightnessby Insertion of the Novel Layer in Alq3-Based OLEDs 1339Y. M. Kim*'", J. W. Lee*'*", J. S. Park''"*,M. Y. Sung",J. Jin*", B. K. Ju*, J. K. Kim**KIST, Korea
"Korea Univ., Korea
'"Kyunghee Univ., Korea
OLEDp-10 All-Wet-Process Organic ElectroluminescentDevice Using Electron Transporting andAlcohol-Soluble Organic Semiconductor
1343Y. Goto, T Hayashlda; M. Noto*Kyushu Elec. Power, Japan'Daiden, Japan
OLEDp -11 Improving Characteristics of OLED with LowWork Function Anode 1347S.-H. Park, J.-l. Lee, C.-S. Hwang, H. Y. ChuETRI, Korea
OLEDp -12 Preparation of ITO Thin Films for Display
Application by FTS (Facing TargetsSputtering) System 1351G. H. Kim, H. W. Kim, H. K. Kim*, M. J. Keum,K. H. Kim
Kyungwon Univ., Korea
'Samsung SDI, Korea
OLEDp -13 Deposition of AZO Thin Films by FTS
System with Sputtering Current 1355H. W. Kim, G. H. Kim, M. J. Keum, I. H. Son;H. W. Choi, K. H. Kim
Kyungwon Univ., Korea
'Shinsung College, Korea
OLEDp -14 Characteristics Improvement of Flexible
Organic Light-Emitting Devices by Nickel-Doped Indium Tin Oxide Anode 1359C.-M. Hsu, C.-L. Tsal, C.-F. Lu, W.-T. WuSouthern Taiwan Univ. of Tech., Taiwan
OLEDp-15 Withdrawn
OLEDp -16 Fabrication of OLEDs on Epoxy Substrateswith SINX/CNX:H Multi-Layer Barrier Films
1367
K. Akedo, A. Mlura, H. Fujikawa, Y. Taga,Y. Akada', T. Umehara*
Toyota CRDL, Japan'Nltto Denko, Japan
OLEDp -17 Synthesis and Properties of ColorlessPolyimide and Its Nanocomposite 1371J. C. Won, S-L. Ma, Y. S. Kim, M. H. Yl,J. H. Lee, K-Y. Choi
Korea Res. Inst, of Chem. Tech., Korea
OLEDp -18 Selective Growth of Encapsulation Layerand Its Influence on Organic Light EmittingDiodes 1375
J. Oh, S. K. Park, C. Hwang, Y. S. Yang, J. Lee,M. K. Kim, H. Y. Chu, K. S. SuhETRI, Korea
OLEDp -19 Flexible Transparent Organic Light EmittingDevices (FTOLED) 1379T. Uchida, S. Kaneta, M. Ichihara, M. Ohtsuka,S. Hoshi; S. Webster", R. Czerw**,D. L. Carroll"
Tokyo Polytech. Univ., Japan'Yazakl Meter, Japan"Wake Forest Univ., USA
OLEDp - 20 Flexible Barrier Substrates with ParyleneBuffer Layer for Flexible Orgarnic LightEmitting Diode (FOLED) 1383S. C. Nam, H. Y. Park, K. C. Lee, K. G. Choi,C. J. Lee*, D. G. Moon*, Y. S. Yoon**Nurlcell, Korea
'Korea Elect. Tech. Inst, Korea"Konkuk Univ., Korea
OLEDp - 21 Manufacturing of Encapsulation Layers forOLED In Polymerization and PlasmaDiffusion 1387C.-C. Lu, J.-H. Wu, S.-K. Lo, L Yu, C.-K. Tzen,S.-J. Tang
Chunghwa Picture Tubes, Taiwan
XXVI IDW '04
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TABLE OF CONTENTS
OLEDp - 22 Novel Photoelectron Spectrometer Equippedwith Open Counter for Ionization PotentialMeasurements of OLED Materials 1391V. Nakajima, D. Yamashita, A. Endo*,T. Oyamada*, C. Adachi*, M. Uda"Rlkenkeiki, Japan'Chitose Inst, of Sci. & Tech., Japan"Waseda Univ., Japan
OLEDp - 23 The Temperature Dependence of PL
Intensity and Fluorescence Lifetime in
Polymer Light-Emitting Diodes 1395H. Uchida, Y. Fujita, M. Koden, C. Adachi*
Sharp, Japan'Chitose Inst, of Sci. & Tech., Japan
OLEDp - 24 Analysis of the Deterioration Mechanism of
Phosphorescence OLED 1399
R. Kamoto, M. Ichikawa*, K. Araki*,Y. Taniguchi*Micro Analysis Lab., Japan'Shinshu Univ., Japan
OLEDp - 32L Novel Host Polymer for Green
Phosphorescent Dendrimer 1423
S. Mikami, C. Sekine, M. Mayumi, J. Pillow;Z. Liu", N. Conway"Sumitomo Chem., Japan
'CDT Oxford, UK
"CDT, UK
OLEDp- 33L Phosphorescent Organic Light-EmittingDiodes Using Platinum Complexes with
NACAN-Coordinating Tridentate Ligand.1425
T. Satoh, W. Sotoyama, M. Kinoshita,J. Kodama, N. Sawatari, H. Inoue
Fujitsu Labs., Japan
OLEDp - 34L Analysis of Failure Modes of Multilayer ThinFilm Encapsulation of OLED Devices and Ca
Films 1427
X. Chu, L Moro, R. J. Visser
Vitex Sys., USA
OLEDp - 25 Integrated Host/Dopant Deposition for LargeOLED Panel Manufacturing 1403M. Shibata, R. Hartmann*, P. Chow*
Sumitomo, Japan*SVTAssociates, USA
OLEDp - 26 A Simulation of Current-VoltageCharacteristics for Alq3 Single Layer
Organic Light Emitting Diodes 1407N. Nakamura, A. Takahashi, S. Suwa,T. Waklmoto, M. KunigitaAsahi Glass, Japan
Workshop on 3D/Hyper-RealisticDisplays and Systems
Wednesday, December 813:30-14:50 Room 302
3D1: Hyper Reality
3D1-1:
OLEDp - 27 Effective Power Reduction in a Non-
Emissive State of Passive-Matrix OLED
1411 3D1-2:
R. Hattori, S. Ohashi, S. Sugimoto, G. Yip
Kyushu Univ., Japan
OLEDp-28L Withdrawn
OLEDp - 29L Fabrication of Hybrid Thin Film Passivated
Flexible OLED 1417
S. H. Choi, J. M. Kim, M. H. Oh, J. S. Kim,C. J. Lee*, D. G. Moon*, J. I. Han*
Dankook Univ., Korea
*KETI, Korea
OLEDp - 30L Durability Test Of Solution-Processed
Organic Electrophosphorescent Devices
with Small Organic Molecules 1419
M. Ooe*, S. Naka*'**, H. Okada*'",
H. Onnagawa*'"
'Toyama Univ., Japan"Japan Sci. & Tech. Agent, Japan
OLEDp - 31L Inverted Organic Electroluminescent
Devices with Molybdenum Trioxide as a Hole
Injection/ Sputtering Buffer Layer 1421T. Miyashita*, S. Naka*'", H. Okada*'",H. Onnagawa*1"*Toyama Univ., Japan"Innovation Plaza Tokai, Japan
Invited Development of CyberDome - aScalable Immersive Projection Display with
Hemi-Spherical Screen 1431
N. Shibano, K. Sawada, H. Takemura*
Matsushita Elec. Ind., Japan*Osaka Univ., Japan
Invited Mixed Reality Audio-Visual
Reproduct
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