indium gallium nitride by charles ball meen 3344 october 15, 2008

Indium gallium nitride

By Charles BallMEEN 3344

October 15, 2008

Characteristics of Indium Gallium Nitride

• Semi Conductor Material• high heat capacity• mix of gallium nitride (GaN) and

indium nitride (InN)• Defect Rich

Band Gap

• Between Valence and Conduction bands.

• Electrons may jump from valence to conduction band if supplied with specific energy.

• This specific energy is unique for all materials.

Conductor Band

Lab Discovery

•Semiconductor Indium Nitride band gap re-measured and found to be 0.7eV instead of 2.0eV.

•By Adjusting the composition %’s it can be tuned to any part of the electromagnetic spectrum.

Advantages / Disadvantages

Disadvantages

•Difficult to dope to create p-type material

•Billions of defects per square centimeter.

Advantages

•Low Band gap (o.7eV)

•Smooth gap-curve when adjusting alloy composition.

• Easily made into layers (very tolerant to mismatched lattice systems)

References

•http://en.wikipedia.org/wiki/Band_gap

•http://www.lbl.gov/Science-Articles/Archive/MSD-full-spectrum-solar-cell.html

•http://www.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html

•http://en.wikipedia.org/wiki/Indium_gallium_nitride