discretes and multimarket ics dmi – bl power...
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Discretes and MultiMarket ICsDMI – BL Power08/08/2002
Semiconductors Johan de Jonge / page:2
DMI – BL Power
Application: Mobile Phone
Handsfree
RF Receiver
Aux ADCsSmartcard
& SIMinterface
PMU ResetOn/Off
GP-IC RF-IC
Analog Audio Codec
LCD Module
LCDdriverD
ispl
ay
PA Control
PA-IC
Charger PowerSupplies
RF Transmitter
VCO Synth.
I
Q
I
Q
Periphery Timer
Digital/Anal.Audio Codec
OAK+-DSPDSPROM
DSPSRAM
CPU A7CPU
SRAM
RF Codec
BB-IC
Semiconductors Johan de Jonge / page:3
DMI – BL Power
Power BaseBand RF-Section Power Amplifier
Semiconductors Johan de Jonge / page:4
DMI – BL Power
Power Section
•Battery Management (charging control)
•Battery Monitoring
•Power supplies (HI, HV, LP, RF, DA, Audio, Display ...)
Semiconductors Johan de Jonge / page:5
DMI – BL Power
CHGF
Charger
Cha
rger
Con
trol
CHGV
Battery
R3
CHGS
R2 R1R4
T2
T1
Battery Management (Charging control)Topologies
Single or dual package, VDS 12~30V, >2A, rds(on)≈≈≈≈100mΩΩΩΩor low VCEsat bipolar transistor
Also Schottky-diodes ~30..40V, IF(AV)≈≈≈≈1A
Different kind
of topologies
Semiconductors Johan de Jonge / page:6
DMI – BL Power
D1: Schottky ~10V
T1: low RDSON, P-type or low VCEsat PNP bipolar
~20V, >1A-device
BATPA
PACOIL
PAACTIVE
Poweramplifier
Battery
BYPASS
PA s
uppl
y co
nver
ter w
ith in
t. FE
Ts
PASENSE
Systemcontroller
VSSPA
D1
T1
C1
H1
Power Amplifier supplyTopologies
Semiconductors Johan de Jonge / page:7
DMI – BL Power
BATDC
DCCOILB
DCCOILA
Load
Battery
RAW1
DC
/DC
Ste
p-up
/dow
n co
nver
ter
D1
D2
C1
H1
Power Supply with step up/down possibilities
D1/2: Schottky diodes:~10-40V, 0.5 - 2A,
SMA, SOT23, SOD323SOT323, SOT666
Topologies
Semiconductors Johan de Jonge / page:8
DMI – BL Power
Level shifting 3V and 5V devicesTopologies
Low Rds(on) (especially for output stages)
Vds max close to rail-voltage, specific±20/30V
Semiconductors Johan de Jonge / page:9
DMI – BL PowerLevel shifting 3V and 5V devicesTopologies
Semiconductors Johan de Jonge / page:10
DMI – BL Power
Conventional Battery Management TopologyTopologies
Semiconductors Johan de Jonge / page:11
DMI – BL Power
Load switchTopologies
Bipolar resistor-equippedtransistors (RETs) couldbe used alternatively
Semiconductors Johan de Jonge / page:12
DMI – BL PowerAnalysis of the mobile phones
The MOSFETS
•Mosfets found in different stages, like Power Supply, BatteryManagement, Power Amplifier, etc.
•Mostly used: SOT23, SOT323 and SOT416 packages, about 5 devices perphone average
•Also used: SOT353, SOT143 and SOT363 with 3 devices per phoneaverage
•Very divers voltage range: 5.5V .. 144V, mostly N-types, low rds(on).
Semiconductors Johan de Jonge / page:13
DMI – BL PowerAnalysis of the mobile phones
The Diodes
•Very small SMA-package, like subsma, “subsubsma”,….
•Approx.. 7 diodes per phone average
•Low breakdown voltage diodes, maximum 58V found, all very softcurves.
•Low-end devices contains more MP-rectifiers than High-end phones.
•Also a lot of small-signal devices found.
Semiconductors Johan de Jonge / page:14
DMI – BL PowerSuitable devices
What is important on uTrenchMOS devices
•Cheap
•Low Vgs(th)
•Low rds(on) (very important!!)
•Vds voltages starting at 8V going up to 40V
•More integration of functionality’s
•Smaller packages, like SOT323, 416, 363.
Semiconductors Johan de Jonge / page:15
DMI – BL PowerSuitable devices
Philips devices:
BSH103 BSH111 Si2302DS
BSH105 BSH112 Si2304DS
BSH108 BSH114 BSH121
The range of uTrenchMOS devices is rapidly expanding,
so watch for new devices!
Semiconductors Johan de Jonge / page:16
DMI – BL Power
Semiconductors Johan de Jonge / page:17
DMI – BL Power
Switch
Rectifying diodeSnubber network
Semiconductors Johan de Jonge / page:18
DMI – BL PowerIntegrated switch / controller
Semiconductors Johan de Jonge / page:19
DMI – BL Power
Snubber networkMosfet Rectifier
Semiconductors Johan de Jonge / page:20
DMI – BL Power
Items:
•Switch
•Rectifying secondary diode
•Snubber network
•Charging control
Semiconductors Johan de Jonge / page:21
DMI – BL Power
•Conventional switch is stand-alone Mosfet controlled by a
PWM-circuit,
•Packages: SMD, like SOT89, SOT223
•Typical Vds: 500-600V
•High-end devices use Integrated controller and Mosfet.
•Like Tinyswitch, Topswitch, Viper, Starplug,
Semiconductors Johan de Jonge / page:22
DMI – BL Power
•Package: SMB, SMA
•Schottky: BV~7.5..122V
•Vf: @500mA: 580mV and up
•Switching speed typ. 25ns Recommended types:• 1N5817 .. 19 20 .. 40V, 1A, SOD81• PRLL5817 .. 19 20 .. 40V, 1A, SOD87• PBYR325CTD 25V, 3A, DPAK (SOT428)• PBYR240CT 40V, 2A, SOT223• PBYR340CTD 40V, 3A, DPAK (SOT428)• PBYR245CT 45V, 2A, SOT223• PBYR345CTD 45V, 3A, DPAK (SOT428)• 1PS74SB43 / …SB23 40 / 25V, 1A, SOT457• BAT720 40V, 0.5A, SOT23• BAT760 20V, 1A, SOD323 (SC-76)• 1PS70SB20 40V, 0.5A, SOT323• PMEG2010EV 20V, 1A, SOT666
Semiconductors Johan de Jonge / page:23
DMI – BL Power
Now mostly RCD-snubber
High-end devices show double diode snubber
Package: SMA, SOD87
Zenerdiodes Vz: 100..200V
Blockingdiode: BV~600V
Huge opportunity for the Zenblock
Semiconductors Johan de Jonge / page:24
DMI – BL Power
Philips Zenblock devices:
BZD142W-series
BZG142-series
BZD142-series
Semiconductors Johan de Jonge / page:25
DMI – BL Power
Philips Blocking devices:
RS1J
BYD37J
BYG60J
Philips Zenerdiodes:
BZG03-C100..C200
BZD27-C100..C200
BZD23-C150..C200
Semiconductors Johan de Jonge / page:26
DMI – BL Power
Philips Blocking devices:
RS1J
BYD37J
BYG60J
Semiconductors Johan de Jonge / page:27
DMI – BL Power
•Most of the time inside the phone (see phone analysis)
Philips devices:
MOSFETs Low VCEsat PNP BJTBSH103 BSH111 PBSS5140D
BSH105 BSH112 PBSS5320D
BSH108 BSH114 PBSS5350Z
BSH121 Si2302DS PBSS5540Z
Si2304DS
Semiconductors Johan de Jonge / page:28
DMI – BL Power
•Typical output conditions of chargers:
•2.3Watts (5.9V @ 400mA) Motorola
•4.5Watts (6.2V @ 700mA) Nokia Communicator
•Low end phones, use linear supply (big transformerand four cheap diodes)
•Common switching speeds 70..100kHz.
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