device models

Device models

Mohammad Sharifkhani

A model for manual analysis

Current-Voltage RelationsThe Deep-Submicron Era

LinearRelationship

-4

VDS (V)0 0.5 1 1.5 2 2.5

0

0.5

1

1.5

2

2.5x 10

I D (

A)

VGS= 2.5 V

VGS= 2.0 V

VGS= 1.5 V

VGS= 1.0 V

Early Saturation

Velocity Saturation

(V/µm)c = 1.5

n

(m/s

)

sat = 105

Constant mobility (slope = µ)

Constant velocity

Perspective

IDLong-channel device

Short-channel device

VDSVDSAT VGS - VT

VGS = VDD

ID versus VGS

0 0.5 1 1.5 2 2.50

1

2

3

4

5

6x 10

-4

VGS (V)

I D (

A)

0 0.5 1 1.5 2 2.50

0.5

1

1.5

2

2.5x 10

-4

VGS (V)

I D (

A)

quadratic

quadratic

linear

Long Channel Short Channel

ID versus VDS

-4

VDS (V)0 0.5 1 1.5 2 2.5

0

0.5

1

1.5

2

2.5x 10

I D (

A)

VGS= 2.5 V

VGS= 2.0 V

VGS= 1.5 V

VGS= 1.0 V

0 0.5 1 1.5 2 2.50

1

2

3

4

5

6x 10

-4

VDS (V)

I D (

A)

VGS= 2.5 V

VGS= 2.0 V

VGS= 1.5 V

VGS= 1.0 V

ResistiveSaturation

VDS = VGS - VT

Long Channel Short Channel

Unified model

Unified model

• Model presented is compact and suitable for hand analysis.

• Still have to keep in mind the main approximation: that VDSat is constant . – When is it going to cause largest errors?– When E scales – transistor stacks.

• But the model still works fairly well.

Velocity saturation

Velocity saturation

Smaller EcL Smaller VDsat Saturates quicker

Velocity saturation

Velocity saturation

Velocity saturation

Velocity Saturation

Output resistance

• Slope in I-V characteristics caused by:– Channel length modulation– Drain-induced barrier lowering (DIBL)

• Both effects increase the saturation current beyond the saturation point

• The simulations show approximately linear dependence of Ids on Vds in saturation.

Output resistance

Output resistance

Output resistance

Transistor stacks

Transistor stacks (Velocity sat.)

NAND Suffers less from VS

In NAND VDsat is larger

Velocity Saturation

• How about NAND3?– IDSat = 1/2 of inverter IDSat (instead of 1/3)

• How about PMOS networks?

• NOR2 – 1.8x, NOR3 – 2.4x, NOR4 - 3.2x

• What is ECL for PMOS?

Alpha power law

Alpha power law

• This is not a physical model• Simply empirical:

– Can fit (in minimum mean squares sense) to variety of α’s, VTh

• Need to find one with minimum square error – fitted VTh

• can be different from physical• Can also fit to α = 1• What is VTh?

Alpha power law

I-V Curves

Regular sat.

TriodeVel. Sat.

I-V curves

A PMOS Transistor

-2.5 -2 -1.5 -1 -0.5 0-1

-0.8

-0.6

-0.4

-0.2

0x 10

-4

VDS (V)

I D (

A)

Assume all variablesnegative!

VGS = -1.0V

VGS = -1.5V

VGS = -2.0V

VGS = -2.5V

Transistor Model for Manual Analysis

The Transistor as a Switch

VGS VT

RonS D

ID

VDS

VGS = VD D

VDD/2 VDD

R0

Rmid

ID

VDS

VGS = VD D

VDD/2 VDD

R0

Rmid

The Transistor as a Switch

0.5 1 1.5 2 2.50

1

2

3

4

5

6

7x 10

5

VDD

(V)

Req

(O

hm)

The Transistor as a Switch

MOS capacitance

• The capacitance of the MOS affects the dynamic behavior of a circuit

• Speed Caps

• Proper modeling is needed

MOS Capacitance

Dynamic Behavior of MOS Transistor

DS

G

B

CGDCGS

CSB CDBCGB

The Gate Capacitance

tox

n+ n+

Cross section

L

Gate oxide

xd xd

L d

Polysilicon gate

Top view

Gate-bulkoverlap

Source

n+

Drain

n+W

Gate Cap

Gate Capacitance

S D

G

CGC

S D

G

CGC

S D

G

CGC

Cut-off Resistive Saturation

Most important regions in digital design: saturation and cut-off

Diffusion Capacitance

Bottom

Side wall

Side wallChannel

SourceND

Channel-stop implant NA1

SubstrateNA

W

xj

LS

Junction Capacitance

Capacitances in 0.25 m CMOS process

MOS Caps behavior