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800V N-Channel MOSFET-T
Absolute Maximum Ratings
(Ta=25
unless otherwise noted)
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 800 V
ID Drain CurrentTj=25
2.0 A
Tj=100 1.25
VGS(TH) Gate Threshold Voltage ±30 V
EAS
Single Pulse Avalanche Energy (note1) 180
mJ
IAR
Avalanche Current (note2) 2.0 A
PD
Power Dissipation (Tj=25) 50 W
Tj Junction Temperature(Max) 150
Tstg Storage Temperature -55~+150
TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC
Thermal Resistance,Junction to Case - 2.5
/W
RθJA Thermal Resistance,Junction to Ambient - 110
/W
Features: Low
Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=12nC (Typ.).
BVDSS=800V,ID=2A
RDS(on) : 6.3Ω
(Max) @VG=10V
100% Avalanche Tested
FIR2N80BPG,FIR2N80LG
REV:1.0 Page 1/9@ 2018 Copyright By American First Semiconductor
TO‐252 TO‐251
PIN Connection TO-251/252
Marking Diagram
FIR2N80BP FIR2N80L A = Assembly Location
Y = Year
WW = Work Week
= Specific Device CodeFIR2N80BPG/LG
YAWW YAWW
G
D
S
gSchematic dia ram
Electrical Characteristics
(Ta=25 unless otherwise noted)
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage ID=250μA,VGS=0 800 - - V
BVDSS/TJ Breakdown Voltage Temperature Coefficient
ID=250μA ,Reference to 25
- 0.9
- V/
IDSS
Zero Gate Voltage Drain Current VDS=800V, VGS=0V - - 10
μA VDS=640V, Tj=125
100
IGSSF
Gate-body leakage Current, Forward VGS=+30V, VDS=0V - - 100
nA IGSSR
Gate-body leakage Current, Reverse VGS=-30V, VDS=0V - - -100
On Characteristics
VGS(TH)
Date Threshold Voltage
ID=250μA,VDS=VGS 3
-
5
V
RDS(ON)
Static Drain-Source On-Resistance ID=1A,VGS=10V - - 6.3 Ω
Dynamic Characteristics
Ciss Input Capacitance VDS=25V,VGS=0,
f=1.0MHz
- 589
-
pF Coss Output Capacitance - 45
-
Crss Reverse Transfer Capacitance - 5.5
-
Switching Characteristics
Td(on) Turn-On Delay Time
VDD=400V,ID=2A RG=25Ω
(Note 3,4)
- 12
35
ns Tr Turn-On Rise Time -
30 70Td(off) Turn-Off
Delay Time - 25
60 Tf Turn-Off Rise Time -
28
65Qg Total Gate Charge
VDS=640V,VGS=10V,ID=2A
(Note 3,4)
- 12
15
nC
Qgs Gate-Source
Charge - 2.6
- Qgd Gate-Drain Charge - 6.0
-
Drain-Source Diode Characteristics and Maximum Ratings
Is Max. Diode Forward Current - - - 1.8A
ISM
Max. Pulsed Forward Current
- - - 7.2VSD
Diode Forward Voltage ID=2A - - 1.4 VTrr Reverse Recovery Time IS=2A,VGS
=0V diF/dt=100A/μs
(Note3)
- 480
- nS
Qrr
Reverse Recovery Charge - 2.0
- μC
Notes : 1, L=105mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ
=25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature
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FIR2N80BPG,FIR2N80LG
Typical Characteristics
0 3 12 150
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
※ Note : ID = 3A
V GS, G
ate-
Sour
ce V
oltag
e [V]
6 9
QG, Total Gate Charge [nC]
0.2 0.4 1.2 1.410-1
100
101
150※ Notes :
1. VGS = 0V2. 250μ s Pulse Test
25
I DR, R
ever
se D
rain
Curre
nt [A
]
0.6 0.8 1.0
VSD, Source-Drain voltage [V]8420 6
2
4
6
8
10
VGS = 20V
VGS = 10V
※ Note : TJ = 25
RDS
(ON)
[Ω],
Drain
-Sou
rce
On-R
esist
ance
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
ID, Drain Current [A]
Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 10110-2
10-1
100
101
VGSTop : 15.0 V 10.0 V
8.0 V7.0 V6.5 V6.0 V
Bottom : 5.5 V
※ Notes :1. 250μ s Pulse Test2. TC = 25
I D, D
rain
Curre
nt [A
]
100
VDS, Drain-Source Voltage [V]
4 1010-1
100
101
150oC
25oC-55oC
※ Notes :1. VDS = 50V2. 250μ s Pulse Test
I D, D
rain
Curre
nt [A
]
6 8
VGS, Gate-Source Voltage [V]
10-1 1010
200
400
600
800Ciss = Cgs + Cgd (Cds = shorted)
Cgd
dsC = C + CgdCrs
os
s
s =
※ Notes :1. VGS = 0 V2. f = 1 MHz
Crss
Coss
Ciss
Capa
citan
ce [p
F]
100
VDS, Drain-Source Voltage [V]
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FIR2N80BPG,FIR2N80LG
Typical Characteristics
(Continued)
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs Case Temperature
-100 -50 150 2000.8
0.9
1.0
1.1
1.2
※ Notes :1. VGS = 0 V2. ID = 250 μA
BVDS
S, (N
ormali
zed)
Drain
-Sou
rce Br
eakd
own V
oltag
e
0 50 100
TJ, Junction Temperature [oC]
-100 -50 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes : 1. VGS = 10 V 2. ID = 1.5 A
R DS(
ON),
(Norm
alize
d)Dr
ain-S
ource
On-R
esist
ance
0 50 100
TJ, Junction Temperature [oC]
100 101 102 10310-2
10-1
100
101
100 msDC
10 ms1 ms
100 µs
Operation in This Area is Limited by R DS(on)
※ Notes :1. TC = 25 oC2. TJ = 150 oC3. Single Pulse
I D, D
r ain C
urren
t [A]
25 50 125 1500
1
2
3
4
I D, D
rain C
urren
t [A]
75 100
TC, Case Temperature []
Figure 7. Breakdown Voltage Variationvs Temperature
Figure 8. On-Resistance Variationvs Temperature
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
※ N o tes : 1 . Z
θ JC( t) = 11 .1 7 /W M a x .
* Z1 2 . D u ty F a c to r, D = t /t2
3 . T JM - T C = P D M θ JC ( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC(t
), T
h erm
al R
espo
nse
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve
t1
PDM
t2
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FIR2N80BPG,FIR2N80LG
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
ChChaarrggee
VVGSGS
1010VVQQgg
QQgsgs QQgdgd
3mA3mA
VVGSGS
DUTDUT
VVDSDS
300300nFnF
5050KKΩΩ
200nF200nF
SamSamee Ty Typepeaass DUT DUT
VVGSGS
VVDSDS
10%10%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ofofff)) ttff
VVDDDD
VVDSDSRRLL
DUTDUT
RRGG
VVGSGS
===EEEASASAS ----21212121------------ LLL ASASASIII
BVBVDSDSSS222 ----------------------------------------
BVBVDSDSSS - V- VDDDD
VVDDDD
VVDSDS
BVBVDSDSSS
t t pp
VVDDDD
IIASAS
VVDSDS (t(t))
IID D (t(t))
TiTimmee
DUTDUT
RRGG
LLL
III DDD
t t pp
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FIR2N80BPG,FIR2N80LG
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUTDUT
VVDSDS
++
__
DriDrivveerrRRGG
SaSammee Ty Typpee as Das DUUTT
VVGSGS •• ddvv//dtdt cocontntrolrollleedd b byy RRGG
•• IISDSD ccoonnttrroolllleed byd by ppuullssee peperriiodod
VVDDDD
LLLII SDSD
1010VVVVGSGS
(( D Drriiverver ) )
II SDSD
( DUT )( DUT )
VVDSDS
( DUT )( DUT )
VVDDDD
BBoodydy D DiiododeeFFoorrwwaarrd Vd Voollttagage e DDrropop
VVSDSD
IIFMFM ,, B Boody Didy Diodode e ForwForwardard CurrenCurrentt
IIRMRM
BBoodydy D Diiodode Re Reeverversse e CCuurrrrenentt
BBoodydy D Diiodode Re Reeccooververyy ddvv//ddtt
didi//ddtt
D =D =D = ---------GaGaGattteee------------------------ P P Puuulllsss------------------------e e e WWW---iiiddd------------ttthhhGaGaGattteee P P Puuulllssse Pe Pe Peeeriririododod
--- ---
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FIR2N80BPG,FIR2N80LG
Package Dimension
TO-251
Units:mm
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FIR2N80BPG,FIR2N80LG
Package Dimension
Units:mm
TO-252
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FIR2N80BPG,FIR2N80LG
Declaration
Any semiconductor product under certain conditions has the possibility of failure or failure,The buyer has theresponsibility to comply with safety
standards and take safety measures when using FIRST products for system design and manufacturing,To avoid To avoid potential failure risks, which may cause personal injury or property damage!Product promotion endless, our company will wholeheartedly provide customers with better products!
ATTACHMENT
Revision History
Date REV Description Page
2018.01.01 1.0 Initial release
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FIRST reserves the right to change the specifications, the same specifications of products due to different packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!
Customers should obtain the latest version information before ordering, and verify whether the relevant
information is complete and up-to-date.
FIR2N80BPG,FIR2N80LG
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