bmayer@chabotcollege.edu engr-45_lec-06_diffusion_fick-1.ppt 1 bruce mayer, pe engineering-45:...
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BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt1
Bruce Mayer, PE Engineering-45: Materials of Engineering
Bruce Mayer, PERegistered Electrical & Mechanical Engineer
BMayer@ChabotCollege.edu
Engineering 45
PhotoLithograpPhotoLithographyhy
MOSFET MOSFET FabFab
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt2
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning - 1PhotoLithoGraphic Patterning - 1
Begin with a precise flat surface such as silicon wafer
silicon substrate
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt3
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning - 2 PhotoLithoGraphic Patterning - 2
A THIN layer of a different material is deposited or grown on the substrate
silicon substrate
oxideoxide
field oxide
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt4
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning - 3 PhotoLithoGraphic Patterning - 3
A Thin layer of PHOTOsensitive, and acid/etch chemical RESISTING material (a.k.a. PhotoResist) is applied to the wafer
silicon substrate
oxideoxidephotoresistphotoresist
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt5
Bruce Mayer, PE Engineering-45: Materials of Engineering
Shadow on photoresist
photoresistphotoresist
Exposed area of photoresist
Chrome platedglass mask
Ultraviolet Light
silicon substrate
oxideoxide
Litho-4: Ultraviolet light Exposes photoresist through windows in a photomask
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt6
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning – 5 PhotoLithoGraphic Patterning – 5
Exposed photoresist becomes soluble and can be easily removed by a “developer” chemical.
Unexposed area of photoresist
silicon substrate
Exposed area of photoresist
oxideoxidephotoresistphotoresist
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt7
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning – 6 PhotoLithoGraphic Patterning – 6
Unexposed photoresist remains on surface of oxide to serve as a temporary protective mask for areas of the oxide that are not to be etched/disolved
silicon substrate
oxideoxide
photoresistphotoresistphotoresist
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt8
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning – 7 PhotoLithoGraphic Patterning – 7
Areas of oxide protected by photoresist remain on the silicon substrate while exposed oxide is removed by the etching process.
silicon substrate
oxideoxide oxideoxide
silicon substrate
photoresistphotoresist
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt9
Bruce Mayer, PE Engineering-45: Materials of Engineering
PhotoLithoGraphic Patterning – 8 PhotoLithoGraphic Patterning – 8
The photoresist is removed using a “stripping process” -- revealing the patterned “window” on the thin oxide layer.
silicon substrate
oxideoxide oxideoxide
silicon substrate
Oxide Layer
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt10
Bruce Mayer, PE Engineering-45: Materials of Engineering
Intel squeezes 2 BILLION transistorsIntel squeezes 2 BILLION transistorsonto new Itanium chip – Feb08 onto new Itanium chip – Feb08
The new 65-nanometer Tukwila Itanium processor, which is expected to be released at the end of 2009, will run at up to 2 GHz, have dual-integrated memory controllers and use Intel's QuickPath interconnect instead of a front-side bus. The processor also will have 2 billion transistors on one chip
BUT...What is a TRANSISTOR?• What KIND of Transistors are used?
• HOW are the Transistors MADE?
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt11
Bruce Mayer, PE Engineering-45: Materials of Engineering
AcknowledgementAcknowledgement
These Following Images Were Graciously Provided by• Michael W. Davidson
National High Magnetic Field Laboratory 1800 E. Paul Dirac Dr. The Florida State University Tallahassee, Florida 32310 Tel: 850-644-0542 Fax: 850-644-8920 email: davidson@magnet.fsu.edu web: http://microscopy.fsu.edu
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt12
Bruce Mayer, PE Engineering-45: Materials of Engineering
n-MOSFET Electronic Devicen-MOSFET Electronic Device negative channel, Metal-Oxide-Silicon, Field-Effect
Transfer-resistor(Transistor)
Source
Drain
Gate
Drain
Electrical Current
Vg
Vd
Vs
d
s
g
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt13
Bruce Mayer, PE Engineering-45: Materials of Engineering
1. Form Gate & Isolation Dielectric1. Form Gate & Isolation Dielectric
Oxidize P-Type Silicon in Tube Furnace
• 1000-1100 °C in O2 or Wafer-Vapor
• Forms Insulating Layer of Silicon Dioxide (SiO2)
– Yellow Layer Below
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt14
Bruce Mayer, PE Engineering-45: Materials of Engineering
2. Apply Photo Resist2. Apply Photo Resist
Spin on “Thick” Liquid Photo Resist (blue) and “Soft-Bake” to make resist plastic-like
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt15
Bruce Mayer, PE Engineering-45: Materials of Engineering
3. Expose the Negative PhotoResist3. Expose the Negative PhotoResist
First Mask Placed Over PhotoResist UltraViolet Light Projected onto the Mask Exposed PhotoResist Hardens (negative resist)
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt16
Bruce Mayer, PE Engineering-45: Materials of Engineering
4. Develop Exposed PhotoResist4. Develop Exposed PhotoResist
Unexposed (and soft) PhotoResist (PR) is Washed away by the “Developer” Solution
• Leaves the exposed PR and SiO2 in tact
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt17
Bruce Mayer, PE Engineering-45: Materials of Engineering
5. Etch SiO5. Etch SiO22 to form Gate Dielectric to form Gate Dielectric
Etch the Thin the SiO2 Using “Plasma Etching”
Leave only a Very Thin Insulating Layer
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt18
Bruce Mayer, PE Engineering-45: Materials of Engineering
6. Remove Used PhotoResist6. Remove Used PhotoResist
Hardened PhotoResist is removed by one of:• Liquid Solvent
• Gaseous Ozone “Ashing”
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt19
Bruce Mayer, PE Engineering-45: Materials of Engineering
7. Deposit Gate Electrode Film7. Deposit Gate Electrode Film
Deposit a Layer of Polycrystalline Silicon (red) by Low Pressure Chemical Vapor Deposition (LPCVD)
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt20
Bruce Mayer, PE Engineering-45: Materials of Engineering
8. Apply 28. Apply 2ndnd Layer of PhotoResist Layer of PhotoResist
Cover PolySi with PhotoResist in Preparation for the Next Mask Step
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt21
Bruce Mayer, PE Engineering-45: Materials of Engineering
9. Expose PhotoResist Using Mask-29. Expose PhotoResist Using Mask-2
The 2nd Mask is placed Over the PR PR exposed to UV Light
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt22
Bruce Mayer, PE Engineering-45: Materials of Engineering
10. Develop Gate Electrode PR10. Develop Gate Electrode PR
Use the Developer to Wash Away UnWanted PR• Leave Behind a “T” shaped PR pattern
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt23
Bruce Mayer, PE Engineering-45: Materials of Engineering
11. Pattern Gate PolySilicon11. Pattern Gate PolySilicon
Use “Dry” Plasma Etching Techniques to Remove BOTH PolySi and SiO2 in areas Not Protected by PR
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt24
Bruce Mayer, PE Engineering-45: Materials of Engineering
12. Remove PR to Complete Gate Electrode12. Remove PR to Complete Gate Electrode
Remove PR by Ozone Ashing Leaves a Strip of PolySi which Rises Above the
Exposed Silicon
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt25
Bruce Mayer, PE Engineering-45: Materials of Engineering
13. Change Exposed Si from P-type to N-type13. Change Exposed Si from P-type to N-type
Ion-Implant Phosphorus or Arsenic to Convert the Exposed Silicon to N-Type
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt26
Bruce Mayer, PE Engineering-45: Materials of Engineering
14. Deposit Electrical Contact Insulation14. Deposit Electrical Contact Insulation
Deposit SiO2 by TEOS+O3 APCVD
• The SiO2 may P or P+B doped
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt27
Bruce Mayer, PE Engineering-45: Materials of Engineering
15. Apply Contact Via PR15. Apply Contact Via PR
Apply a 3rd Layer of PhotoResist that Will be used to Form the Vertical Shafts used for Electrical Contacts
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt28
Bruce Mayer, PE Engineering-45: Materials of Engineering
16. Expose PR using 316. Expose PR using 3rdrd Mask Mask
Again Exposed Masked PR to UV Light The Black Rectangles Will Define the Contact Holes
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt29
Bruce Mayer, PE Engineering-45: Materials of Engineering
17. Develop Contact-Via PR17. Develop Contact-Via PR
Develop the PR to Expose the SiO2 in the desired Contract areas
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt30
Bruce Mayer, PE Engineering-45: Materials of Engineering
18. Expose Silicon Thru Etching18. Expose Silicon Thru Etching
Etch the SiO2 Not Protected by the PR to Expose the underlying Silicon• PolySi at rear
• N-Type Si at Front-Left & Front-Right
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt31
Bruce Mayer, PE Engineering-45: Materials of Engineering
19. Remove Contact-Via PR19. Remove Contact-Via PR
Remove the PR to Reveal Contact holes, or vias, in the insulating APCVD-SiO2
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt32
Bruce Mayer, PE Engineering-45: Materials of Engineering
20. Deposit Aluminum Contact Wiring 20. Deposit Aluminum Contact Wiring
Blanket Deposit Al-Cu Alloy by Sputtering Al Contacts the Si and PolySi thru the holes in the
APCVD-SiO2
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt33
Bruce Mayer, PE Engineering-45: Materials of Engineering
21. Apply “Wiring” PhotoResist21. Apply “Wiring” PhotoResist
Apply a 4th Layer of PhotoResist that Will be used to Form the Al-Cu “wires” that Carry Electrical Current and Potential (Voltage) to the Transistor
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt34
Bruce Mayer, PE Engineering-45: Materials of Engineering
22. Metallization Exposure22. Metallization Exposure
Expose the PR using the Metallization Mask
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt35
Bruce Mayer, PE Engineering-45: Materials of Engineering
23. Develop Metallization PR23. Develop Metallization PR
Develop PR Exposing Regions of the Al-Cu Metal for Subsequent Removal
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt36
Bruce Mayer, PE Engineering-45: Materials of Engineering
24. Etch UnProtected Al-Cu to Form “Wires”24. Etch UnProtected Al-Cu to Form “Wires” The Final Etching Step Removes the Unwanted Metal;
Leaving only Metal used for• Contacting thru the Vertical-Shaft Vias the Silicon
Source/Drain and Poly-Si Gate
• Forming Strips of Al-Cu that act as Wires
BMayer@ChabotCollege.edu • ENGR-45_Lec-06_Diffusion_Fick-1.ppt37
Bruce Mayer, PE Engineering-45: Materials of Engineering
25. Remove Remaining Resist 25. Remove Remaining Resist Xsistor Done Xsistor Done
Remove the Remaining Metallization Resist, Completing the n-MOSFET Transistor• Millions of transistors can be formed Simultaneously
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