akt211 – cao 07 – computer memory

AKT211 – CAO

07 – Computer Memory

GhifarParahyangan Catholic University

Okt 24, 2011

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Outline Computer Memory System

Memory Characteristics Memory Hierarchy

RAM Basic Technology Semiconductor SRAM vs DRAM

Advanced RAM Organization SDRAM vs DDR-RAM

COMPUTER MEMORY SYSTEM

Characteristics

Location• CPU• Internal• External

Capacity• Word size

– The natural unit of organization• Number of words

– or Bytes

Unit of Transfer• Internal

– Usually governed by data bus width• External

– Usually a block which is much larger than a word

• Addressable unit– Smallest location which can be

uniquely addressed– Word internally– Cluster on M$ disks

Access Methods (1)• Sequential

– Start at the beginning and read through in order

– Access time depends on location of data and previous location

– e.g. tape• Direct

– Individual blocks have unique address– Access is by jumping to vicinity plus

sequential search– Access time depends on location and

previous location– e.g. disk

Access Methods (2)• Random

– Individual addresses identify locations exactly

– Access time is independent of location or previous access

– e.g. RAM• Associative

– Data is located by a comparison with contents of a portion of the store

– Access time is independent of location or previous access

– e.g. cache

Memory Hierarchy Registers

– In CPU Internal or Main memory

– May include one or more levels of cache

– “RAM” External memory

– Backing store

Memory Hierarchy - Diagram

RAM BASIC TECHNOLOGY

Semiconductor Main Memory• universally used as RAM basic

technology• The basic element : “memory cell”• Read/Write• Volatile• Temporary storage• Static or dynamic

Memory Cell Operation

Semiconductor Memory Types

Dynamic RAM• Bits stored as charge in capacitors• Charges leak• Need refreshing even when powered• Simpler construction• Smaller per bit• Less expensive• Need refresh circuits• Slower• Main memory• Essentially analogue

– Level of charge determines value

Dynamic RAM Structure• Address line active when bit read

or written– Transistor switch closed (current

flows)• Write

– Voltage to bit line• High for 1 low for 0

– Then signal address line• Transfers charge to capacitor

• Read– Address line selected

• transistor turns on– Charge from capacitor fed via bit line

to sense amplifier• Compares with reference value to

determine 0 or 1– Capacitor charge must be restored

Static RAM• Bits stored as on/off switches• No charges to leak• No refreshing needed when powered• More complex construction• Larger per bit• More expensive• Does not need refresh circuits• Faster• Cache• Digital

– Uses flip-flops

Static RAM Structure

SRAM v DRAM• Both volatile

– Power needed to preserve data• Dynamic cell

– Simpler to build, smaller– More dense– Less expensive– Needs refresh– Larger memory units

• Static– Faster– Cache

ADVANCED RAM ORGANIZATION

Synchronous DRAM (SDRAM)• Access is synchronized with an external clock

– Conventional DRAM is asynchronous, CPU must wait the access time delay

– With SDRAM, CPU doesn’t have to wait, it can do something else

• Takes advantage of the burst mode concept to greatly improve performance– staying on the row containing the requested bit and

moving rapidly through the columns, reading each bits as it goes

– Idea : most of the time the data needed by the CPU will be in sequence !

• Maximum transfer rate to L2 cache : 528 MBps

SDRAM - Diagram

SDRAM Read Timing

DDR-SDRAM• Double Data Rate Synchronous Dynamic

RAM• Higher bandwidth => greater speed• Higher transfer rate

– Uses double pumping transferring data on both the rising and falling edges of the clock signal

• Classes : DDR1, DDR2, DDR3– Neither of which are either forward or backward

compatible !

DDR SDRAM Read Timing

DDR SDRAM Read Timing

Any Question ?

THANK YOU