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In CMOS using AMI-05 Process3 Transistor Active Pixel Sensor
Ermal Dreshaj, B.S. Computer EngineeringDaniel Saab, Ph.D. Computer Engineeringermal@case.eduCase Western Reserve University
CMOS Active Pixel Sensor Used in a variety of applicationsCommercial (Photography)Government/Defense (Nightvision)Research/Medical/Scientific (IR Analysis)
Main competitor: Charge Coupled DeviceCheaper to manufacture than CCD.Quality now approaching that of CCD.CMOS can integrate sensing with analog and
digital processing down to the pixel level.
CMOS Image Sensor Theory
Source: Wikimedia Commonshttp://commons.wikimedia.org/wiki/File:CMOS_Image_Sensor_Mechanism_Illustration.svg
Photodiode in CMOS
Photo-generated carriers in a semiconductor.
n-
P-sub.
hv = hc/λ
Photogate layout used for the 3T-APS design.
Holes
Electrons
3T-APS Design
Source: Wikimedia Commonshttp://en.wikipedia.org/wiki/File:Aps_pd_pixel_schematic.svg
n- well photogate
3T-APS Design
3T-APS Circuit Simulation
3T-APS Circuit Simulation
3T-APS Layout 1 Pixel
Photogate n- well
N-Well to Substrate Capacitance (AMI05): 92 aF/m2
λ = 0.35 µm, Aphotogate = 62.825 * 21.525 = 1352.31 µm2
Cphotogate = 124.41 fF
3T-APS Layout Simulation
3T-APS Layout Simulation
Bibliography
Ohta, Jun. Smart CMOS Image Sensors and Applications. CRC Press. 2008.
Fossum, Eric R. CMOS Image Sensors:Electronic Camera-On-A-Chip. IEEE Transactions on Electronic Devices, Vol. 44, No. 10, October 1997.
El Gamal, Abbas and Elthoukhy, Helmy. CMOS Image Sensors. IEEE Circuits and Devices Magazine. May/June 2005.
Special Thanks
• Steven Majerus, Ph.D. Student Electrical Engineering, Case Western Reserve University– LTSPICE and L-EDIT software training, and
assistance with design and layout.
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