12.5w cw, 20-3000mhz power transistorpreliminary specification ta8210d 1 © 2018 tagore technology...
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Preliminary Specification
TA8210D
1 www.tagoretech.com © 2018 Tagore Technology Rev1.6
12.5W CW, 20-3000MHz Power Transistor
FEATURES
• Frequency: 20-3000MHz
• Gain @ 800Mhz: 17dB
• Psat @ 800MHz: 42dBm
• PAE @ Psat: 52% @ 800MHz
• 28V Operation
APPLICATIONS
• Land Mobile Radios
• Military Radios
• Cellular Infrastructure TUNED DEMO BOARDS
• 1.8G – 2.7GHz
• 100 - 1000MHz
• 20 - 525MHz
DESCRIPTION
The TA8210D is a broadband capable 12.5W GaN on
Silicon power transistor covering 20MHz to 3GHz
frequency bands for power amplifier applications. The
input and output can be matched on board for best
power and efficiency for the desired band.
The TA8210D is packaged in a compact, low cost Quad
Flat No lead (QFN) 3x6mm, 32 leads plastic package.
Figure 1: Functional Block Diagram (top view)
ORDERING INFORMATION
Base Part Number Package Type Standard Pack Orderable
Part Number Form Quantity
TA8210D QFN 3 mm x 6 mm Tape and Reel 3000 TA8210DMTRPBF
1
2
3
4
32 31 30 29
12 13 14 15
28
16
5
6
7
8
9
10
11
22
21
20
19
18
17
23
24
25
26
27
33
Preliminary Specification
TA8210D
2 www.tagoretech.com © 2018 Tagore Technology Rev1.6
PIN DESCRIPTION
Note 1: Backside ground slug of the package must be grounded directly to the ground plane through multiple vias to ensure proper operation
ABSOLUTE MAXIMUM RATINGS
Exceeding one or a combination of the Absolute Maximum Ratings conditions may cause permanent damage to the device
RECOMMENDED OPERATING CONDITIONS
Note 2: Package base at 85deg C
PIN NUMBER PIN NAME DESCRIPTION
1, 2, 3, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 25, 26, 27,
28, 29, 30, 31, 32 NC Not Connected
4, 5, 6, 7, 8 Vgg & RFin Gate Voltage and RF Input
20, 21, 22, 23, 24 Vdd & RFout Drain Voltage and RF Output
331 Paddle/Slug Ground
PARAMETER SYMBOL RATINGS UNITS
Breakdown Voltage VDS +100 V
Gate Source Voltage Range VGS -7 to +1.5 V
Drain Current IDS 2.0 A
Gate Current IGS 12.0 mA
Power dissipation CW @ 25degC Pdiss 25.0 W
RF Input Power CW, 25degC, 800MHz RFin 28 dBm
Junction Temperature Tj 175 C
Storage temperature Range Tst -40 to +150 C
Operating Temperature Range Top -40 to +85 C
PARAMETER SYMBOL Min Typ Max UNITS
Drain Voltage Vd +12 +28 +32 V
Gate Voltage Vgg -3.3 -3.1 -2.9 V
Drain Bias Current Idq 80 mA
Drain Current Id 900 mA
Power dissipation CW2 Pdiss 18.0 W
Operating Temperature Range Top -40 25 85 C
Preliminary Specification
TA8210D
3 www.tagoretech.com © 2018 Tagore Technology Rev1.6
THERMAL CHARACTERISTICS
RF Electrical Specifications Data taken on 100-1000MHz Broadband Reference Design, Vdd = 28V, Idq = 80mA, CW, Room Temp
PARAMETER Test Condition Symbol Typ UNITS
Thermal Resistance Vd = 28V, Tj = 175 degC θJC 5 C/W
PARAMETER Test Conditions Min Typ Max UNITS
Small Signal Gain (Gss) 800MHz 17 dB
Large Signal Gain Pout = 41dBm, 800MHz 16 dB
Psat 800MHz 42.0 dBm
Power Added Efficiency (PAE) Pout = 41dBm 52 %
Drain Voltage 28 32 Vdd
Ruggedness All phase, Pout = 41dBm VSWR = 10:1
Preliminary Specification
TA8210D
4 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Power Drive-Up of 100 – 1000MHz EVB
Note: Vd = 28V, Idq = 80mA (Vg = -3.1V), CW, Room Temp
Figure 2: Gain and Efficiency vs Pout (100–500MHz)
Figure 3: Gain and Efficiency vs Pout (600–1000MHz)
0
10
20
30
40
50
60
70
80
12
13
14
15
16
17
18
19
20
18 20 22 24 26 28 30 32 34 36 38 40 42 44
Dra
in E
ffic
ien
cy [
%]
Gai
n [
dB
]
Total Pout [dBm]
GAIN 100 MHz
GAIN 200 MHz
GAIN 300 MHz
GAIN 400 MHz
GAIN 500 MHz
EFF 100 MHz
EFF 200 MHz
EFF 300 MHz
EFF 400 MHz
EFF 500 MHz
0
10
20
30
40
50
60
70
80
12
13
14
15
16
17
18
19
20
18 20 22 24 26 28 30 32 34 36 38 40 42 44
Dra
in E
ffic
ien
cy [
%]
Gai
n [
dB
]
Total Pout [dBm]
GAIN 600 MHz
GAIN 700 MHz
GAIN 800 MHz
GAIN 900 MHz
GAIN 1000MHzEFF 600 MHz
EFF 700 MHz
EFF 800 MHz
EFF 900 MHz
EFF 1000 MHz
Preliminary Specification
TA8210D
5 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Power Drive-Up of 100 – 1000MHz EVB
Note: Vd = 28V, Idq = 80mA (Vg = -3.1V), CW, Room Temp
Figure 4: 2nd, 3rd Harmonic vs Pout (100–500MHz)
Figure 5: 2nd, 3rd Harmonic vs Pout (600–1000MHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
-40
-35
-30
-25
-20
-15
-10
-5
0
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
3rd
Har
mo
nic
[d
Bc]
2n
d H
arm
on
ic [
dB
c]
Total Pout [dBm]
H2 100 MHz
H2 200 MHz
H2 300 MHz
H2 400 MHz
H2 500 MHz
H3 100 MHz
H3 200 MHz
H3 300 MHz
H3 400 MHz
H3 500 MHz
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
3rd
Har
mo
nic
[d
Bc]
2n
d H
arm
on
ic [
dB
c]
Total Pout [dBm]
H2 600 MHz
H2 700 MHz
H2 800 MHz
H2 900 MHz
H2 1000 MHz
H3 600 MHz
H3 700 MHz
H3 800 MHz
H3 900 MHz
H3 1000 MHz
Preliminary Specification
TA8210D
6 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Power Drive-Up of 100 – 1000MHz EVB
Note: Vd = 28V, Idq = 80mA (Vg = -3.1V), CW, Room Temp
Figure 6: Pdiss vs Pout (100–500MHz)
Figure 7: Pdiss vs Pout (600–1000MHz)
0
2
4
6
8
10
12
14
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Po
we
r D
issi
pat
ion
[W
]
Total Pout [dBm]
Pdiss 100MHz
Pdiss 200MHz
Pdiss 300MHz
Pdiss 400MHz
Pdiss 500MHz
0
2
4
6
8
10
12
14
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Po
we
r D
issi
pat
ion
[W
]
Total Pout [dBm]
Pdiss 600 MHz
Pdiss 700 MHz
Pdiss 800 MHz
Pdiss 900 MHz
Pdiss 1000MHz
Preliminary Specification
TA8210D
7 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Typical Two Tone Power Drive-Up of 100 – 1000MHz EVB
Note: Vd = 28V, Idq = 80mA and 130mA, 450MHz, CW, Room Temp
Figure 8: IMD3 vs PEP at 450MHz
Figure 9: IMD5 vs PEP at 450MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
IMD
5[d
Bc]
"PEP" Output (Pavg + 3) [dBm]
Lower IM5, 80 mAUpper IM5, 80mALower IM5, 130 mAUpper IM5, 130 mA
-55
-50
-45
-40
-35
-30
-25
-20
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
IMD
3 [
dB
c]
"PEP" Output (Pavg + 3) [dBm]
Lower IM3, 80 mA
Upper IM3, 80mA
Lower IM3, 130 mA
Upper IM3, 130 mA
Preliminary Specification
TA8210D
8 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Power Drive-Up of 20 – 525MHz EVB
Note: Vd = 28 & 32V, Idq = 80mA (Vg = -3.1V), CW, Room Temp
Figure 10: Gain and Efficiency vs Pout at 28V Vd
Figure 11: Gain and Efficiency vs Pout at 32V Vd
0
10
20
30
40
50
60
70
80
13
14
15
16
17
18
19
20
21
18 20 22 24 26 28 30 32 34 36 38 40 42
Dra
in E
ffic
ien
cy [
%]
Gai
n [
dB
]
Total Pout [dBm]
GAIN 20MHz 28V
GAIN 50MHz 28V
GAIN 100MHz 28V
GAIN 200MHz 28V
GAIN 300MHz 28V
GAIN 400MHz 28V
GAIN 500MHz 28V
GAIN 525MHz 28V
EFF 20 MHz 28V
EFF 50MHz 28V
EFF 100MHz 28V
EFF 200MHz 28V
EFF 300MHz 28V
EFF 400MHz 28V
EFF 500MHz 28V
EFF 525MHz 28V
0
10
20
30
40
50
60
70
80
13
14
15
16
17
18
19
20
21
18 20 22 24 26 28 30 32 34 36 38 40 42
Dra
in E
ffic
ien
cy [
%]
Gai
n [
dB
]
Total Pout [dBm]
GAIN 20MHz 32V
GAIN 50MHz 32V
GAIN 100MHz 32V
GAIN 200MHz 32V
GAIN 300MHz 32V
GAIN 400MHz 32V
GAIN 500MHz 32V
GAIN 525MHz 32V
EFF 20MHz 32V
EFF 50MHz 32V
EFF 100MHz 32V
EFF 200MHz 32V
EFF 300MHz 32V
EFF 400MHz 32V
EFF 500MHz 32V
EFF 525MHz 32V
Preliminary Specification
TA8210D
9 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Typical Characteristics of 1.8 – 2.7GHz EVB Note: Vd = 28V, Idq = 100mA (Vg = -3.08V), CW, Room Temp
Figure 12: S-parameter data
Note: Vd = 28V, Idq = 100mA (Vg = -3.08V), LTE (PAPR = 9.5dB), 10MHz BW, Room Temp
Figure 13: Gain and Efficiency vs Pout
-20
-15
-10
-5
0
5
10
15
20
1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800
(dB
)
Frequency (MHz)
Gain
ORL
IRL
0
5
10
15
20
25
30
35
40
9
10
11
12
13
14
15
16
17
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Dra
in E
ffic
ien
cy [
%]
Gai
n [
dB
]
Total Average Pout[dBm]
1.8 GHz Avg. Gain 2.3 GHz Avg. Gain 2.7 GHz Avg. Gain
1.8 GHz Avg. Eff 2.3 GHz Avg. Eff 2.7 GHz Avg. Eff
Preliminary Specification
TA8210D
10 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Figure 14: ACPR/AACPR vs Pout
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
AC
PR
(+/
-1
0 M
Hz)
[d
Bc]
Total Average Pout[dBm]
Lower ACPR, 1.8 GHzUpper ACPR, 1.8 GHzLower ACPR, 2.3 GHzUpper ACPR, 2.3 GHzLower ACPR, 2.7 GHzUpper ACPR, 2.7 GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
AA
CP
R (
+/-2
0 M
HZ)
[d
Bc]
Total Average Pout[dBm]
Lower AACPR, 1.8 GHz
Upper AACPR, 1.8 GHz
Lower AACPR, 2.3 GHz
Upper AACPR, 2.3 GHz
Lower AACPR, 2.7 GHz
Upper AACPR, 2.7 GHz
Preliminary Specification
TA8210D
11 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Bias and Sequencing
Turn ON Device
1. Set Vg to -5V. 2. Set Vd to +28V. 3. Adjust Vg to achieve Idq current. 4. Apply RF power
Turn OFF Device
1. Turn RF power off. 2. Turn off Vd 3. Turn off Vg
Preliminary Specification
TA8210D
12 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Schematic of EVB Tuned for 100–1000MHz
Part List
Reference Value Manufacturer Part/Series
C1, C9 4.7nF, 50V Murata GRM18 Series
C2 4.7pF ATC 600S4R7CT250XT
L1 3.3nH Coilcraft 0603HP-3N3XGLW
L2 3.3nH Coilcraft 0402CS-3N3XGLW
L3 680nH Coilcraft PFL2512-681ME
L4 3.9nH Coilcraft 0603HC-3N9XJLW
L5 6nH Coilcraft 0603HP-6N0XGLW
C3 0.1uF, 10V AVX 0603YC104K4Z2A
C4 0.1uF, 50V Murata GRM31C5C1H104JA01K
C5 100uF Nichicon UPW1J101MPD1TD
C6, C7 3.9pF ATC 600S3R9CT250XT
C8 3.3pF ATC 600S3R3CT250XT
R1 5.1 ohms Panasonic ERJ-3RQF5R1V
R2 51 ohms 250 mW Panasonic ERJ-PA3F51R0V
R3 33 ohms 250 mW Panasonic ERJ-PA3F33R0V
D1 7.5 V Zener On Semiconductor MMSZ5236BT 1G
PCB Rogers RO4350B, 20 mils, 2 ounce copper
Figure 15: Schematic of 100-1000MHz EVB
C1
4.7nF
C3
0.1uF
R250ohm
D1
C83.3pFRF IN
C9
4.7nF
Vgg
-v e
C73.9pF
RF OUT
L2
3.3nH
C5
100uF
L1
3.3nH
R1
5ohm
R333ohm
C63.9pF
VDD
28V
L3
680nH
PA
C4
0.1uF
L4
3.9nH
C24.7pF
L5
6nH
D1
Preliminary Specification
TA8210D
13 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Schematic of EVB Tuned for 20–525MHz
Part List
Reference Value Manufacturer Part/Series
C1, C9 4.7nF, 50V Murata GRM18 Series
C2 4.7pF ATC 600S4R7CT250XT
L1 4.3nH Coilcraft 0603HP-4N3XGLW
L2 4.3nH Coilcraft 0402CS-4N3XGLW
L3 680nH Coilcraft PFL2512-681ME
L4 6.8nH Coilcraft 0603HP-6N8XJLW
L5 6.8nH Coilcraft 0603HP-6N8XJLW
C3 0.1uF, 10V AVX 0603YC104K4Z2A
C4 0.1uF, 50V Murata GRM31C5C1H104JA01K
C5 100uF Nichicon UPW1J101MPD1TD
C6 6.8pF ATC 600S6R8JT250XT
C8 3.9pF ATC 600S3R9CT250XT
R1 5.1 ohms Panasonic ERJ-3RQF5R1V
R2 51 ohms 250 mW Panasonic ERJ-PA3F51R0V
R3 33 ohms 250 mW Panasonic ERJ-PA3F33R0V
D1 7.5 V Zener On Semiconductor MMSZ5236BT 1G
PCB Rogers RO4350B, 20 mils, 2 ounce copper
Figure 16: Schematic of 20-525MHz EVB
L2
4.3nH
R333ohm
L1
4.3nH
C83.9pF
VDD
C1
2.2nFPARF IN
Vgg
-v e
C10
2.2nF
C5
100uF
C9
2.2nF
C4
0.1uF
L4
6.8nH
RF OUT
R1
5ohm
R250ohm
L3
680nH
L5
6.8nH
C24.7pF
D1
C3
0.1uF
C11
2.2nFC66.8pF
L2
C6
C1
C2
L1
C3
R1
R2,R3 L3
L4
L5 C4
C5
C8
C9
Vdd Vgg
D1
Preliminary Specification
TA8210D
14 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Schematic of EVB Tuned for 1.8 – 2.7GHz
Figure 17: Schematic of 1.8 – 2.7GHz EVB
C121.5pF
C15
0.1uF
C240.7pF
C142.2pF
R1133ohm
C21
0.1uF
VDD
28V
L11
1.0nH
C11
4.7nF
C230.7pF
Q1
C26
100uF
RF IN
C132.4pF
C25
4.7nF
R21
5.1ohm
C22
33pF
L23
0.8nH
RF OUT
Vgg
-v e
L22
22nH
L21
1.6nH
D11
TA8210D
15 www.tagoretech.com © 2018 Tagore Technology Rev1.6
Part List Reference Value Manufacturer Part/Series
C11, C25 4.7nF, 50V Murata GRM1885C1H472JA01D
C12 1.5pF ATC 600S1R5BT250XT
L11 1.0nH Coilcraft 0402HP-1N0XJLW
C13 2.4pF ATC 600S2R4BT250XT
C14 2.2pF ATC 600S2R2BT250XT
L21 1.6nH Coilcraft 0603HC-1N6XJLW
L22 22nH Coilcraft 0603HC-22NXJLW
L23 0.8nH Coilcraft 0402PA-0N8XJLW
C22 33pF ATC 600S330JT250XT
C15 0.1uF, 16V AVX 0603YC104K4Z2A
C21 0.1uF, 50V Murata GRM31C5C1H104JA01L
C26 100uF Nichicon UPW1J101MPD1TD
C23,24 0.7pF ATC 600S0R7BT250XT
R11 33 ohms 250 mW Panasonic ERJ-PA3F33R0V
R21 5.1 ohms 250 mW Panasonic ERJ-PA3J5R1V
Q1 Tagore Technology TA8210D
D11 7.5 V Zener On Semiconductor MMSZ5236BT 1G
PCB Rogers RO4350B, 20 mils, 2 ounce copper
TA8210D
16 www.tagoretech.com © 2018 Tagore Technology Rev1.6
PACKAGE INFORMATION
Figure 18: Package drawings
Preliminary Specification
TA8210D
17 www.tagoretech.com © 2018 Tagore Technology Rev1.6
QUALIFICATION INFORMATION†
Qualification Level Consumer
Moisture Sensitivity Level 3x6 QFN MSL1
Human Body Model TBD
Charged Device Model NA
RoHS Compliant Yes
The information provided in this document is believed to be accurate and reliable. However, Tagore Technology assumes no responsibility
for the consequences of the use of this information. Tagore Technology assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of Tagore Technology. The specifications mentioned in this document are subject to change without notice. This
document supersedes and replaces all information previously supplied.
For technical support, please contact Tagore Technology support@tagoretech.com
WORLD HEADQUARTERS:
5 East College Dr. Suite 200, Arlington Heights, IL 60004
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