amorphous silicon technology —...

Amorphous Silicon Technology — 1991

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Cambridge University Press978-1-107-40991-0 - Amorphous Silicon Technology — 1991: Symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.Edited by Arun Madan, Y. Hamakawa, M.J. Thompson, P.C. Taylor and P.G. LeComberFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 219

Amorphous Silicon Technology — 1991

Symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.

EDITORS:

Arun Mad anMV-Systems, Inc., Golden, Colorado, U.S.A.

Y. HamakawaOsaka University, Osaka, Japan

MJ. ThompsonXerox PARC, Palo Alto, California, U.S.A.

P.C TaylorUniversity of Utah, Salt Lake City, Utah, U.S.A.

P.G. LeComberUniversity of Dundee, Dundee, United Kingdom

IMIRISI MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xix

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xxi

PART I: STABILITY

CONTROL OF PHOTO-INDUCED DEGRADATION IN a-Si:HPREPARED FROM Xe-DILUTED SILANE

S. Mashima, K. Hasezaki, A. Suzuki, PJ. McElheny andA. Matsuda 3

AN ALTERNATIVE MODEL FOR THE KINETICS OF LIGHT-INDUCED DEFECTS IN a-Si:H

P.V. Santos, W.B. Jackson and R.A. Street 15

COMPREHENSIVE KINETICS OF DEFECTS IN a-Si:HD. Redfield and R.H. Bube 21

TEMPERATURE DEPENDENCE OF THE GROWTH ANDSATURATION OF LIGHT-INDUCED DEFECTS IN a-Si:H

M. Isomura, N. Hata and S. Wagner 27

THE EFFECT OF LIGHT SOAKING ON ELECTRON MOBILITIESIN HYDROGENATED AMORPHOUS SILICON

H. Antoniadis, Q. Wang, E.A. Schiff and S. Guha 33

LATTICE RELAXATION OF DEEP DEFECTS IN LIGHT-SOAKEDN-TYPE HYDROGENATED AMORPHOUS SILICON

T.M. Leen and J.D. Cohen 39

BIAS STRESS INDUCED INSTABILITIES IN AMORPHOUSSILICON NITRIDE/CRYSTALLINE SILICON AND AMORPHOUSSILICON NITRIDE/AMORPHOUS SILICON STRUCTURES

J. Kanicki, C. Godet and A.V. Gelatos 45

TEMPERATURE DEPENDENCE OF METASTABLE DEFECTCREATION IN a-SiNx:H

A. Hamed, H. Fritzsche and S. Kohler 51

DEFECT EQUILIBRATION AND METASTABILITY IN LOW-SPIN-DENSITY a-Si:H

TJ. McMahon 57

*Invited paper






CHARGE-DEFECT EQUILIBRIUM DESCRIPTION OF THESTAEBLER-WRONSKI DEFECT CONCENTRATION ANDFORMATION ENERGY

C M . Fortmann, R.M. Dawson and C.R. Wronski 63

CORRELATION BETWEEN FREEZE-IN TEMPERATURE OFDEFECT DENSITY AND HYDROGEN CONCENTRATION INa-Si:H

X. Xu, M. Isomura, J.H. Yoon, S. Wagner and J.R. Abelson 69

HYDROGEN DYNAMICS AND THE DISTRIBUTION OF H SITESIN UNDOPED a-Si:H AND a-Ge:H

R. Shinar, X.-L. Wu, S. Mitra and J. Shinar 75

HYDROGEN STABILITY IN HYDROGENATED AMORPHOUSSILICON-BASED ALLOYS

W. Beyer, J. Herion, H. Wagner and U. Zastrow 81

THERMAL QUENCHING OF PHOTOCONDUCTIVITY AND THESIGN OF PHOTOCARRIERS IN DOPED a-Si:H

B.-G. Yoon, H. Fritzsche, M.Q. Tran and D.-Z. Chi 87

REDUCING THE SATURATED DEFECT DENSITY IN a-Si:H BYPOST-GROWTH ANNEALS

J.H. Yoon, X. Xu, M. Kotharay and S. Wagner 93

ASSESSMENT OF WEAK Si-Si BOND BREAKING MECHANISMSOF THE STAEBLER-WRONSKI EFFECT

R. Biswas, I. Kwon and CM. Soukoulis 99

IMPROVED LIGHT SOAKING STABILITY OF R.F. SPUTTERDEPOSITED AMORPHOUS SILICON

A. Wynveen, J. Fan, J. Kakalios and J. Shinar 105

SCHOTTKY BARRIERS ON MAGNETRON SPUTTEREDa-Si:H: DEPLETION WIDTH EFFECTS ON PHOTOCARRIERCOLLECTION VS BANDGAP AND LIGHT SOAKING

J.R. Doyle, N. Maley and J.R. Abelson 111

COUPLED EFFECTS OF LIGHT AND TEMPERATURE ONDEGRADATION OF a-Si:H

L.E. Benatar, M. Grimbergen, D. Redfield and R.H. Bube 117

TEMPERATURE DEPENDENT DEFECT DENSITY CALCULATEDFROM ACTIVATED CONDUCTIVITY OF a-Si:H

T. Drusedau, V. Kirbs and H. Fiedler 123

THERMAL ANNEALING OF LIGHT-INDUCED K° CENTERS INHYDROGENATED AMORPHOUS SILICON NITRIDE

E.D. Tober, E. Sigari, J. Kanicki and M.S. Crowder 129






DEFECT CREATION BY FORWARD BIAS IN AMORPHOUSSILICON P-I-N DIODES

R.A. Street and M. Hack 135

DEGRADATION STUDY OF SINGLE a-Si:H ALLOY SOLARCELLS

A.H. Pawlikiewicz, A. Banerjee and S. Guha 141

METASTABLE DEFECTS IN a-SiOx:H AND a-SiCx:HX.-M. Deng, A. Hamed, H. Fritzsche and M.Q. Tran 147

PART II: OPTICAL DEVICES

* RESPONSE TIME OF a-Si:H PHOTOSENSORS IN OPTICALLYADDRESSED SPATIAL LIGHT MODULATORS

G. Moddel and P.R. Barbier 155

OPTICALLY ADDRESSABLE INPUT CIRCUIT FOR TWO-DIMENSIONAL IMAGE SENSING

M. Hack, A.G. Lewis, R.H. Bruce and R. Lujan 167

THE DYNAMIC RESPONSE OF HYDROGENATED AMORPHOUSSILICON IMAGING PIXELS

J. Yorkston, L.E. Antonuk, EJ. Morton, J. Boudry, W. Huang,C.W. Kim, MJ. Longo and R.A. Street 173

CHARACTERIZATION OF a-Si:H AND a-SiGe:H FILMS INLIQUID CRYSTAL LIGHT VALVE

J. Qiao, G. Han, P. Du, W. Han, W. Huang and Z. Ding 179

THEORETICAL AND EXPERIMENTAL ANALYSIS OFAMORPHOUS SILICON IMAGE SENSOR

C.-Y. Su, Y.-W. Su and H.-L. Hwang 185

RADIATION DETECTION WITH EVAPORATED CsI(Tl) COUPLEDTO a-Si:H PHOTODIODE LAYERS

I. Fujieda, G. Cho, J. Drewery, T. Gee, T. Jing, S.N. Kaplan,V. Perez-Mendez and D. Wildermuth 191

CHARACTERISTICS OF a-Si:H SCHOTTKY PHOTODIODE BYUSING Mo BARRIER METAL AT Al/ITO CONTACT

Y. Sakai, H. Hotta, T. Hamada, H. Ito and T. Ozawa 197

FERROELECTRIC LIQUID CRYSTAL LIGHT VALVE USINGSiO2/a-Si:H PHOTODIODE

T. Horikawa, S. Tahata, S. Kaho, T. Masumi, N. Mikami,K. Takahashi, M. Nunoshita, H. Nakajima and K. Nishi 203

"Invited Paper






PART III: STRUCTURE

* INFLUENCE OF DEPOSITION CONDITIONS ON THE OPTICALAND ELECTRONIC PROPERTIES OF a-Ge:H

W. Paul, S.J. Jones, F.C. Marques, D. Pang, W.A. Turner,A.E. Wetsel, P. Wickboldt and J.H. Chen 211

CORRELATION OF STRUCTURE AND STRUCTURAL CHANGESWITH PHOTOVOLTAIC QUALITY OF a-Si:D,H AND a-Ge:D,HFILMS

R.E. Norberg, P.A. Fedders, J. Bodart, R. Corey, Y.W. Kim,W. Paul and W. Turner 223

VIBRATIONAL SPECTRA OF a-Si:H OBTAINED BY PDSE. Lotter, M.B. Schubert, M. Heintze and G.H. Bauer 229

1/f NOISE IN HYDROGENATED AMORPHOUS SILICONC. Parman and J. Kakalios 235

CORRELATION BETWEEN AMORPHOUS SILICON SOLARCELL PARAMETERS AND PHOTOINDUCED CURRENTNOISE POWER SPECTRUM

F. Demichelis, P. Rava and A. Tagliaferro 241

RESULTS FROM FIRST PRINCIPLES MOLECULAR DYNAMICSSIMULATIONS ON a-Si

P.A. Fedders and D.D. Drabold 247

HYDROGEN DENSITY OF STATES MODEL FOR AMORPHOUSSILICON AND ALLOYS

R.A. Street 253

THE EFFECT OF HYDROGEN DILUTION ON THE DEPOSITIONOF SiGe ALLOYS AND THE DEVICE STABILITY

L. Yang, L. Chen and A. Catalano 259

AUGER AND EELS STUDY OF a-Si^CxiH ALLOYSM. de Seta, P. Narducci and F. Evangelisti 265

EFFECTS OF ANNEALING TIME AND TEMPERATURE ONHYDROGEN IN DOPED AND INTRINSIC AMORPHOUS SILICON

S.E. Ready and J.B. Boyce 271

CORRELATION BETWEEN STRUCTURAL ANDPHOTOELECTRICAL PROPERTIES OF a-Si^Ge^H ALLOYFILMS-NEW INTERPRETATION CONCERNING THEPREFERENTIAL ATTACHMENT OF HYDROGEN

B. Schroeder, M. Leidner and H. Oechsner 277

*Invited Paper

viii






THE STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXAFS

S. Pascarelli, F. Boscherini, S. Mobilio and F. Evangelisti 283

THE INFLUENCE OF THE BONDING STRUCTURE ON DISORDERAND BANDTAILS IN a-B:H

N. Bemhard, K. Eberhardt, M.B. Schubert and G.H. Bauer 289

IN SITU IR ABSORPTION STUDY OF H BONDING IN a-Si:H THINFILMS

M. Katiyar, G.F. Feng, J.R. Abelson and N. Maley 295

PART IV: THIN FILM TRANSISTORS

A NEW SELF-ALIGNED a-Si TFT USING ION DOPING ANDCHROMIUM SILICIDE FORMATION

S. Nishida, H. Uchida and S. Kaneko 303

AMORPHOUS SILICON THIN-FILM TRANSISTORS MODIFIEDBY DOPING AND PLASMA TREATMENT OF THE NITRIDE

N. Nickel, R. Saleh, W. Fuhs and H. Mell 309

TRANSIENT SIMULATIONS OF AMORPHOUS SILICON DEVICESM. Hack and J.G. Shaw 315

THE APPLICATION OF HYDROGENATION TO AMORPHOUSSILICON THIN FILM TRANSISTORS FOR THE DECREASEOF THE OFF CURRENT

K. Kobayashi, H. Murai, M. Hayama and T. Yamazaki 321

HIGH TEMPERATURE OFF CURRENT IN a-Si TFT's - EFFECTOF PROCESS AND STRUCTURE

G.E. Possin 327

REDUCTION OF THRESHOLD VOLTAGE SHIFT BY BIASANNEALING OF HYDROGENATED AMORPHOUS SILICONTHIN FILM TRANSISTORS

S.C. Deane, W.I. Milne and MJ. Powell 333

AMORPHOUS SILICON THIN-FILM TRANSISTORS WITHNON-UNIFORM DISTRIBUTION OF GAP STATES

R. Saleh, N. Nickel, W. Fuhs and H. Mell 339

EFFECTS OF TEMPERATURE AND ELECTRICAL STRESSON THE CHARACTERISTICS OF AMORPHOUS SILICONTHIN-FILM TRANSISTORS

J.S. Park, C.H. Oh, H.S. Choi, M.K. Han, Y.I. Choi andC.H. Han 345






A NEW DEVICE MODEL OF AMORPHOUS SILICON THIN-FILMTRANSISTOR FOR CIRCUIT SIMULATION

H.S. Choi, J.S. Park, C.H. Oh, I.S. Joo, Y.S. Kim, M.K. Han,Y.I. Choi, J.G. Yun, W.K. Park and W.Y. Kim 351

REACTIVE ION ETCHED Mo/Cr SOURCE-DRAIN METALLIZATIONFOR AMORPHOUS SILICON THIN FILM TRANSISTORS

R.F. Kwasnick, G.E. Possin and RJ. Saia 357

INFLUENCE OF THE GATE BIAS AND TEMPERATURE ONPOSITIVE CHARGE GENERATION IN TFT GATE-QUALITYAMORPHOUS SILICON NITRIDE FILMS

J. Kanicki and M. Sankaran 363

TEMPERATURE DEPENDENCE OF a-Si:H NIP DIODESC. van Berkel, M.J. Powell and I.D. French 369

PART V: MICROCRYSTALLINE SILICON

BARRIER LIMITED TRANSPORT MECHANISMS IN DOPED MC-SiAND /xc-Si,C

G. Lucovsky and C. Wang 377

INFLUENCE OF DOPING ON THE STRUCTURAL PROPERTIESOF MICROCRYSTALLINE SILICON PREPARED WITH VHF-GDTECHNIQUE AT LOW DEPOSITION TEMPERATURES

F. Finger, K. Prasad, S. Dubail, A. Shah, X.-M. Tang, J. Weberand W. Beyer 383

DEPOSITION AND CHARACTERIZATION OF NEAR"INTRINSIC MC-Si FILMS DEPOSITED BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD

M.J. Williams, C. Wang and G. Lucovsky 389

STUDIES OF MOS HETEROJUNCTION DEVICES USING DOPEDMC-Si AND a-Si

D.R. Lee, C.H. Bjorkman, C. Wang and G. Lucovsky 395

DEVICE APPLICATION AND GROWTH MECHANISM FORHEMISPHERICAL-GRAINED Si

H. Watanabe, N. Aoto, S. Adachi and T. Kikkawa 401

EXCIMER LASER CRYSTALLIZED AMORPHOUS SILICONFILMS: EFFECTS OF SHOT DENSITY AND SUBSTRATETEMPERATURE

R.I. Johnson, G.B. Anderson, S.E. Ready and J.B. Boyce 407






PHYSICAL PROPERTIES OF UNDOPED AND DOPEDMICROCRYSTALLINE SiC:H DEPOSITED BY PECVD

F. Demichelis, C.F. Pirri, E. Tresso, G. DellaMea, V. Rigatoand P. Rava 413

PART VI: SOLAR CELLS

* DICE (DYNAMIC INNER COLLECTION EFFICIENCY)CHARACTERIZATION OF PHOTOVOLTAIC PERFORMANCEIN a-Si SOLAR CELLS

M. Ohnishi, T. Takahama and Y. Kuwano 421

* EFFECT OF LIGHT EXPOSURE CONDITIONS ON THE LIGHT-INDUCED DEGRADATION IN AMORPHOUS SILICON ALLOYSOLAR CELLS

Y. Nakata, A. Yokota, H. Sannomiya, S. Moriuchi, Y. Inoue,K. Nomoto, M. Itoh and T. Tsuji 433

HIGH EFFICIENCY STABLE a-Si THREE JUNCTION 12" X 13"MODULES

M.S. Bennett, A. Catalano, J. Newton, C. Poplawski, R. Arya,K. Rajan, G. Wood and S. Wiedeman 445

CRITICAL ASSESSMENT OF SUB-BANDGAP PRIMARYPHOTOCURRENT IN a-Si:H BASED SOLAR CELLS

T.X. Zhou, S.S. Hegedus and CM. Fortmann 451

SIMULATION OF AMORPHOUS SILICON HYDRIDE SOLARCELLS USING A PERSONAL COMPUTER

F.R. Shapiro 457

ANNEALING CHARACTERISTICS OF AMORPHOUS SILICONALLOY SOLAR CELLS IRRADIATED WITH 1.00 MeVPROTONS

S.S. Abdulaziz and J.R. Woodyard 463

HIGHLY CONDUCTIVE MICROCRYSTALLINE SILICON LAYERSFOR TUNNEL JUNCTIONS IN STACKED AMORPHOUS SILICONBASED SOLAR CELLS

K. Prasad, U. Kroll, F. Finger, A. Shah, J-L. Dorier, A. Howling,J. Baumann and M. Schubert 469

IMPROVEMENT OF a-Si:H P-I-N DEVICES USING ZINCOXIDE BASED BACK-REFLECTORS

C. Kothandaraman, T. Tonon, C. Huang and A.E. Delahoy 475

•Invited Paper






THE STUDY OF THE OPTOELECTRONIC PROPERTIES OFa-SiGe:H PHOTODIODES

L.C. Kuo, C.C. Lee, K.H. Chen, Y.K. Fang and C.H. Yu 481

ROLE OF SiO AT TCO/P INTERFACE ON THE ELECTRICALPROPERTIES OF THE P/I JUNCTION

C. Carvalho, J.M.M. de Nijs, R. Martins and L. Guimaraes 487

FAST CHANGES IN a-Si:H SOLAR CELLS AFTER SEVERELIGHT-SOAKING

B. von Roedern 493

AMORPHOUS HYDROGENATED SILICON (a-Si:H)PHOTOVOLTAIC THIN FILMS DEPOSITED ONTO ULTRA-LOWDENSITY AEROGELS

S.P. Hotaling and F.P. Proni 499

PART VII: NOVEL DEVICES

* ULTRA-HIGH-SENSITIVE IMAGE PICKUP TUBES USINGAVALANCHE MULTIPLICATION IN a-Se

K. Tsuji, T. Ohshima, T. Hirai, N. Gotoh, K. Tanioka and K. Shidara 507

NOVEL APPLICATION OF AMORPHOUS SILICON INELECTROSTATIC LOUDSPEAKERS

R.E.I. Schropp, M. Smits, H. Meiling, W.GJ.H.M. van Sark,M.M. Boone, J. Bezemer and W.F. van der Weg 519

AMORPHOUS SILICON ANALOGUE MEMORY ELEMENTSM.J. Rose, J. Hajto, P.G. LeComber, A.J. Snell, A.E. Owen andI.S. Osborne 525

LIGHT-RESPONSE CHARACTERISTICS OF AMORPHOUSSILICON ARRAYS FOR MEGAVOLTAGE AND DIAGNOSTICIMAGING

L.E. Antonuk, J. Yorkston, C.W. Kim, W. Huang, E.J. Morton,M.J. Longo and R.A. Street 531

CHARACTERISTICS OF a-Si PIXEL ARRAYS FOR RADIATIONIMAGING

I. Fujieda, S. Nelson, R.A. Street and R.L. Weisfield 537

*Invited Paper






PART VIII: DENSITY OF STATES

SUB-BANDGAP OPTICAL ABSORPTION IN AMORPHOUSSILICON USING PHOTO-PYROELECTRIC SPECTROSCOPY

J. Fan and J. Kakalios 545

DEFECT STRUCTURE AND NETWORK DISORDER IN BORONDOPED AMORPHOUS SILICON

M.B. Schubert, G. Schumm, E. Lotter, K. Eberhardt andG.H. Bauer 551

DENSITY OF STATES SPECTROSCOPY IN p-TYPE a-Si:H ANDa-Si:C:H

R.S. Crandall, SJ. Salamon and Y. Xu 557

ELECTRON TRANSPORT IN a-Si:H AT LOW TEMPERATURESC.E. Nebel and J. Kocka 563

AN INVESTIGATION OF SPIN AND CHARGE STATESASSOCIATED WITH METASTABLE DEFECTS IN N-TYPEHYDROGENATED AMORPHOUS SILICON

RJ. Rasmussen, J.D. Cohen and J.M. Essick 569

STATES IN THE GAP OF IMPROVED a-Ge:H STUDIED BYPHOTOMODULATION SPECTROSCOPY

L. Chen, J. Tauc, D. Pang, W.A. Turner and W. Paul 575

EFFECT OF THE LOCAL DISORDER IN a-Si ON THE ELECTRONICDENSITY OF STATES AT THE BAND EDGES

B.N. Davidson, G. Lucovsky and J. Bemholc 581

COMMENTS ON THE DETERMINATION OF DEFECT DENSITY INa-Si:H ALLOYS BY INTEGRATING THE SUB-BANDGAP OPTICALABSORPTION COEFFICIENT

Y.-M. Li and W. Paul 587

DEFECT STATES IN HYDROGENATED AMORPHOUS SILICON-SULPHUR ALLOYS BY ESR AND PAS

G. Han, J. Qiao, P. Du, Z. Jiang and Z. Ding 593

NUCLEAR SPIN-LATTICE RELAXATION VIA PARAMAGNETICCENTERS IN AMORPHOUS HYDROGENATED SILICON (a-Si:H)

M.K. Cheung and M.A. Petrich 599

EFFECTS OF TEMPERATURE AND CHARGE DEPLETION ONTHE SPIN DENSITY IN HYDROGENATED AMORPHOUS SILICON

J.-K. Lee and E.A. Schiff 605

THE DISTRIBUTION OF OCCUPIED DEEP LEVELS IN a-Si:HDETERMINED FROM CPM SPECTRA

N. Hata and S. Wagner 611






PART IX: GROWTH

* IN SITU MEASUREMENTS OF HYDROGEN FLUX, SURFACECOVERAGE, INCORPORATION AND DESORPTION DURINGMAGNETRON SPUTTER-DEPOSITION OF a-Si:H

J.R. Abelson, N. Maley, J.R. Doyle, G.F. Feng, M. Fitzner,M. Katiyar, L. Mandrell, A.M. Myers, A. Nuruddin, D.N. Ruzicand S. Yang 619

* PROBLEMS IN LARGE SIZE AMORPHOUS SILICON PLATEMANUFACTURING

J.P.M. Schmitt 631

* A NOVEL PREPARATION TECHNIQUE TERMED "CHEMICALANNEALING" TO MAKE A RIGID AND STABLE Si-NETWORK

H. Shirai, J.-I. Hanna and I. Shimizu 643

* FILM DEPOSITION PROCESS IN PULSE DISCHARGE CWDT. Yoshida, H. Fujisawa, T. Hokaya, Y. Ichikawa and H. Sakai 655

SURFACE PROCESSES LIMITING THE HIGH RATE DEPOSITIONOF HIGH ELECTRONIC QUALITY a-Si

S. Vepfek, O. Ambacher and M. Riickschloss 667

DEPOSITION OF DEVICE-QUALITY, LOW H CONTENT a-Si:HBY THE HOT WIRE TECHNIQUE

A.H. Mahan, B.P. Nelson, S. Salamon and R.S. Crandall 673

CHARACTERIZATION OF ELECTRON CYCLOTRONRESONANCE PLASMA-DEPOSITED HYDROGENATEDAMORPHOUS SILICON AND RELATED ALLOY FILMS

J.M. Essick, F.S. Pool, Y.H. Shing and M.J. Holboke 679

A SPATIALLY RESOLVED STUDY OF CHEMICAL VAPORDEPOSITION OF a-Si:H WITH PURE THERMAL EXCITATION OFDISILANE

G. Amato, R. Spagnolo, F. Fizzotti, C. Manfredotti, P. Mennaand G. Nobile 685

PREPARATION OF HIGH-QUALITY a-SiGe:H FILMS WITHLOW IMPURITY CONCENTRATION BY THE HYDROGENDILUTION METHOD

K. Sayama, H. Haku, H. Dohjoh, M. Isomura, N. Nakamura,S. Tsuda, Y. Kishi, S. Nakano and Y. Kuwano 691

GROWTH AND CHARACTERIZATION OF HYDROGENATEDAMORPHOUS SILICON USING LIQUID ORGANIC SOURCES

K. Gaughan, S. Hershgold, J.M. Viner and P.C. Taylor 697

•Invited Paper

xiv






KINETICS OF GAS-PHASE CHEMICAL REACTIONS ANDGROWTH OF a-SiC:H FILMS FROM SILANE AND ACETYLENEIN A REMOTE HYDROGEN PLASMA REACTOR

N.M. Johnson, P.V. Santos, J. Walker and K.S. Stevens 703

SUBSTRATE INDUCED CRYSTALLINITY IN REACTIVESPUTTER DEPOSITION OF HYDROGENATED SILICON

G.F. Feng, M. Katiyar, J.R. Abelson and N. Maley 709

MEASUREMENT OF INTRINSIC STRESS IN a-Si:H THINFILMS DEPOSITED IN A REMOTE HYDROGEN PLASMAREACTOR

K.S. Stevens and N.M. Johnson 715

HYDROGEN DILUTION EFFECTS ON AMORPHOUSHYDROGENATED SILICON (a-Si:H) PREPARED BY GLOWDISCHARGE NEAR ROOM TEMPERATURE

M.K. Cheung and M.A. Petrich 721

AMORPHOUS SILICON SELENIUM ALLOY FILM DEPOSITEDUNDER HYDROGEN DILUTION

M. He, G.H. Lin and J.O'M. Bockris 727

STUDY OF OXIDATION PROPERTIES OF AMORPHOUS Si:BFILMS

G.-R. Yang, T.C. Nason, Y.-J. Wu, B.Y. Tong and S.K. Wong 733

ArF EXCIMER LASER DOPING INTO AMORPHOUS SILICONTHIN FILMS

M. Elliq, A. Slaoui, E. Fogarassy, H. Pattyn, R. Stuck and P. Siffert 739

AMORPHOUS HYDROGENATED SILICON CARBIDE PREPAREDFROM DC-BIASED RF-PLASMA-ENHANCED CHEMICAL VAPORDEPOSITION

H.Y. Lu and M.A. Petrich 745

DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE Si,CALLOY THIN FILMS BY A REMOTE PLASMA-ENHANCEDCHEMICAL-VAPOR DEPOSITION PROCESS

C. Wang, G. Lucovsky and R.J. Nemanich 751

DEPOSITION OF FLUORINATED SILICON NITRIDE USINGPLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONTECHNIQUE

I. Khan, H.A. Naseem, S.S. Ang and W.D. Brown 757

WIDE BANDGAP FLUORINATED SILICON-CARBIDE-NITRIDEFILMS USING NF3

H.C. Goh, S.M. Tan, H.A. Naseem, S.S. Ang and W.D. Brown 763






METHODS OF IMPROVING GLOW-DISCHARGE-DEPOSITEDa-Sii-xGe^H

Y.S. Tsuo, Y. Xu, E.A. Ramsay, R.S. Crandall, SJ. Salamon,I. Balberg, B.P. Nelson, Y. Xiao and Y. Chen 769

EFFECTS OF HYDROGEN RADICAL ANNEALING ONELECTRICAL PROPERTIES OF AMORPHOUS SILICON

J. Jang, T.G. Kim, S.O. Koh, H.K. Song, K.C. Park,M.H. Chung, S.C. Kim, J.H. Kwon and J.D. Kim 775

AN INVESTIGATION OF THE INFLUENCE OF PLASMACHARACTERISTICS ON THE ELECTRONIC AND OPTICALPROPERTIES OF DEVICE QUALITY a-Si:H GROWN BYELECTRON CYCLOTRON RESONANCE PLASMA DEPOSITION

R.D. Knox, V.L. Dalai and B. Moradi 781

COMPOSITION AND PROPERTIES OF PECVD SILICON NITRIDEFILMS DEPOSITED FROM SiH4, N2, He GASES

J.H. Souk, G.N. Parsons and J. Batey 787

a-SiC:H DOPED WITH REACTIVE GASES AND WITH IONIMPLANTATION

F. Demichelis, C.F. Pirri, E. Tresso, G. DellaMea, V. Rigato,P. Rava and G. Amato 793

THE INFLUENCE OF NITROGEN CONTENT ON THE PROPERTIESOF SPUTTERED a-SisgGe^iNiH FILMS

T. Driisedau 799

ETCHING PROPERTIES OF HYDROGENATED AMORPHOUSSILICON

Y.S. Tsuo, Y. Xu, D.W. Baker and S.K. Deb 805

THE SLOPE ETCHING OF a-Si:H FILM USING CF4 + O2 GASK.H. Sung, B.W. Park, J.J. Kim, C.Y. Kim, J.I. Choi, H.K. Bae,Y.H. Park and C.W. Hur 811

PART X: INTERFACES

EFFECTS OF SUBSTRATE PARAMETERS ON AMORPHOUS-CRYSTALLINE SILICON INTERFACE

U.B. Vetrella and J.D. Cohen 819

THE INVESTIGATION OF FLUORINE EFFECTS ON CHARGETRAPPING AND INTERFACE STATE GENERATION IN MOSSTRUCTURES

D.D. Xie, T.-C. Lin and D.R. Young 825






OPTICAL PROPERTIES OF RANDOM MULTILAYERS OFAMORPHOUS a-Si:H/a-Si3N4+x:H AND THE CLASSICALLOCALIZATION

S. Nitta, K. Ogawa, T. Furukawa, T. Itoh and S. Nonomura 831

INTERFACE EFFECTS ON PHOTOCARRIER TRANSPORT INa-Si:H

P.D. Persans, D. Arnzen, G. Possin, L. D'Anna, X.S. Zhaoand K. Breton 837

SURFACE ABSORPTION BELOW THE BAND GAP IN a-Si:HUSING PHOTOLUMINESCENCE ABSORPTION SPECTROSCOPY

S.Q. Gu, S. Nitta and P.C. Taylor 843

PART XI: TRANSPORT

STEADY STATE PHOTOCARRIER CHARGE COLLECTION INa-Si:H FOR ELECTRONS AND HOLES

C.-D. Abel, H.R. Paes and G.H. Bauer 851

HOPPING CONDUCTION IN a-Si:H STUDIED BY TRANSIENTPHOTOCONDUCTIVITY WITH OPTICAL BIAS ILLUMINATION

X. Chen, U. Jayamaha and C.-Y. Tai 857

a-Si:H AMBIPOLAR DIFFUSION LENGTH AND EFFECTIVELIFETIME MEASURED BY FLYING SPOT TECHNIQUE (FST)

M. Vieira, R. Martins, E. Fortunato, F. Soares and L. Guimaraes 863

FUNDAMENTAL CONSIDERATION ON CARRIER TRANSPORTIN AMORPHOUS SILICON SUPERLATTICES

Y.L. Jiang and H.L. Hwang 869

AUTHOR INDEX 875

SUBJECT INDEX 879

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 885

xvii






Preface

This volume contains papers presented at the symposium on Amorphous SiliconTechnology which was held at the 1991 MRS Spring Meeting in Anaheim, California. Thissymposium is a continuation of successful symposia held at previous MRS spring meetings.The papers contained in this volume relate both to materials issues and to device applications.Papers are included on hydrogenated amorphous silicon (a-Si:H), silicon-germanium alloys(a-SijGe^iH), silicon-carbon alloys (a-S^C^rH), and silicon-nitrogen alloys (a-S

The topics covered in this volume include the stability of a-Si:H films, solar cells andthin film transistors (TFT's), the structure of a-Si:H and related alloys, the density ofelectronic states in a-Si:H and related alloys, the transport properties of a-Si:H, the growthand characterization of a-Si:H and related alloys, the role of interfaces in determining themeasured properties of a-Si:H films and in the performance of various device structures,recent developments in various devices based on a-Si:H, such as solar cells, TFT's,. opticaldevices and various novel devices, and various properties of microcrystalline silicon films.The volume is organized into eleven parts which parallel the sessions at the conference.

As has unfortunately become commonplace for these symposia, the stability of a-Si:H,of alloys based on a-Si:H, and of devices employing a-Si:H formed a major focus of thediscussion. There were several novel approaches suggested to improve the stability includingthe use of Xenon as a dilution gas, the "hot wire" growth technique which can produce filmswith very low hydrogen concentrations (<1 at. %), the use of Se or S to replace H, and theuse of remote plasma deposition techniques. The role of "weak11 Si-Si bonds in thedegradation processes was hotly debated. Also, the injection of carriers into insulatingbarriers was discussed quantitatively as a possible contributing mechanism for degradation insome devices and test structures. Finally, the important question concerning the range overwhich the material relaxes following defect creation was raised but not answered. Thisquestion will undoubtedly be raised again at future symposia.

One encouraging note at the symposium was the report by several laboratories of filmsof a-Ge:H and a-GexSil-x:H with much improved electronic and optical properties. Thisdevelopment may point the way to better solar cells based on tandem structures. Also, theuse of an interrupted plasma technique to make solar cells with substantially reduced dustformation within the plasma may enhance the yield of these devices. Finally, methods otherthan rf plasma enhanced chemical vapor deposition (PECVD), such as dc PECVD, sputteringor remote plasma deposition, are now producing films with excellent electronic and opticalproperties. It remains to be seen whether any of these competing growth techniques willbecome important in the actual manufacture of devices. In addition to the solar cell markets,the use of devices based on a-Si:H in flat screen liquid crystal displays is greatly expanding.This fact is reflected in an increased number of papers in this volume on TFT's applied tolarge area displays. Another important and recent development of the technology is the useof a-Si:H as photosensing elements in large area arrays where a-Si:H TFT's provide gain atthe pixel level.

xix






We are grateful to all of the industrial sponsors for their generous financial support. Weare particularly indebted to Mary Ann Woolf for her administrative help during theSymposium and for her expert editorial assistance in the preparation of this volume. Onceagain we hope that these Proceedings will continue to promote both a better scientificunderstanding of tetrahedrally coordinated amorphous semiconductors and improvements inthe technologies which utilize these materials.

Arun MadanYoshihiro HamakawaMalcolm J. ThompsonP. Craig TaylorPeter G. LeComber

June 1991






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 201—Surface Chemistry and Beam-Solid Interactions, H. Atwater,F.A. Houle, D. Lowndes, 1991, ISBN: 1-55899-093-3

Volume 202—Evolution of Thin Film and Surface Microstructure,C.V. Thompson, J.Y. Tsao, DJ. Srolovitz, 1991,ISBN: 1-55899-094-1

Volume 203—Electronic Packaging Materials Science V, E.D. Lillie,P. Ho, RJ. Jaccodine, K. Jackson, 1991, ISBN: 1-55899-095-X

Volume 204—Chemical Perspectives of Microelectronic Materials II,L.V. Interrante, K.F. Jensen, L.H. Dubois, M.E. Gross, 1991ISBN: 1-55899-096-8

Volume 205—Kinetics of Phase Transformations, M.O. Thompson, M. Aziz,G.B. Stephenson, D. Cherns, 1991, ISBN: 1-55899-097-6

Volume 206—Clusters amd Cluster-Assembled Materials, R.S. Averback,J. Bernholc, D.L. Nelson, 1991, ISBN: 1-55899-098-4

Volume 207—Mechanical Properties of Porous and Cellular Materials,K. Sieradzki, D. Green, LJ. Gibson, 1991, ISBN-1-55899-099-2

Volume 208—Advances in Surface and Thin Film Diffraction, T.C. Huang,P.I. Cohen, DJ. Eaglesham, 1991, ISBN: 1-55899-100-X

Volume 209—Defects in Materials, P.D. Bristowe, J.E. Epperson, J.E. Griffith,Z. Liliental-Weber, 1991, ISBN: 1-55899-101-8

Volume 210—Solid State Ionics II, G.-A. Nazri, D.F. Shriver, R.A. Huggins,M. Balkanski, 1991, ISBN: 1-55899-102-6

Volume 211—Fiber-Reinforced Cementitious Materials, S. Mindess,J.P. Skalny, 1991, ISBN: 1-55899-103-4

Volume 212—Scientific Basis for Nuclear Waste Management XIV,T. Abrajano, Jr., L.H. Johnson, 1991, ISBN: 1-55899-104-2

Volume 213—High-Temperature Ordered Intermetallic Alloys IV,L.A. Johnson, D.P. Pope, J.O. Stiegler, 1991, ISBN: 1-55899-105-0

Volume 214—Optical and Electrical Properties of Polymers, J.A. Emerson,J.M. Torkelson, 1991, ISBN: 1-55899-106-9

Volume 215—Structure, Relaxation and Physical Aging of Glassy Polymers,RJ. Roe, J.M. O'Reilly, J. Torkelson, 1991, ISBN: 1-55899-107-7

Volume 216—Long-Wavelength Semiconductor Devices, Materials andProcesses, A. Katz, R.M. Biefeld, R.L. Gunshor, RJ. Malik, 1991,ISBN 1-55899-108-5

Volume 217—Advanced Tomographic Imaging Methods for the Analysis ofMaterials, J.L. Ackerman, W.A. Ellingson, 1991,ISBN: 1-55899-109-3

Volume 218—Materials Synthesis Based on Biological Processes, M. Alper,P.D. Calvert, R. Frankel, P.C. Rieke, D.A. Tirrell, 1991,ISBN: 1-55899-110-7






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 219—Amorphous Silicon Technology—1991, A. Madan,Y. Hamakawa, M. Thompson, P.C. Taylor, P.G. LeComber,1991, ISBN: 1-55899-113-1

Volume 220—Silicon Molecular Beam Epitaxy, 1991, J.C. Bean, E.H.C. Parker,S. Iyer, Y. Shiraki, E. Kasper, K. Wang, 1991, ISBN: 1-55899-114-X

Volume 221—Heteroepitaxy of Dissimilar Materials, R.F.C. Farrow,J.P. Harbison, P.S. Peercy, A. Zangwill, 1991, ISBN: 1-55899-115-8

Volume 222—Atomic Layer Growth and Processing, Y. Aoyagi, P.D. Dapkus,T.F. Kuech, 1991, ISBN: 1-55899-116-6

Volume 223—Low Energy Ion Beam and Plasma Modification of Materials,J.M.E. Harper, K. Miyake, J.R. McNeil, S.M. Gorbatkin, 1991,ISBN: 1-55899-117-4

Volume 224—Rapid Thermal and Integrated Processing, M.L. Green,J.C. Gelpey, J. Wortman, R. Singh, 1991, ISBN: 1-55899-118-2

Volume 225—Materials Reliability Issues in Microelectronics, J.R. Lloyd,P.S Ho, C.T. Sah, F. Yost, 1991, ISBN: 1-55899-119-0

Volume 226—Mechanical Behavior of Materials and Structures inMicroelectronics, E. Suhir, R.C. Cammarata, D.D.L. Chung,1991, ISBN: 1-55899-120-4

Volume 227—High Temperature Polymers for Microelectronics, D.Y. Yoon,D.T. Grubb, I. Mita, 1991, ISBN: 1-55899-121-2

Volume 228—Materials for Optical Information Processing, C. Warde,J. Stamatoff, W. Wang, 1991, ISBN: 1-55899-122-0

Volume 229—Structure/Property Relationships for Metal/Metal Interfaces,A.D Romig, D.E. Fowler, P.D. Bristowe, 1991, ISBN: 1-55899-123-9

Volume 230—Phase Transformation Kinetics in Thin Films, M. Chen,M. Thompson, R. Schwarz, M. Libera, 1991, ISBN: 1-55899-124-7

Volume 231—Magnetic Thin Films, Multilayers and Surfaces, H. Hopster,S.S.P. Parkin, G. Prinz, J.-P. Renard, T. Shinjo, W. Zinn, 1991,ISBN: 1-55899-125-5

Volume 232—Magnetic Materials: Microstructure and Properties, T. Suzuki,Y. Sugita, B.M. Clemens, D.E. Laughlin, K. Ouchi, 1991,ISBN: 1-55899-126-3

Volume 233—Synthesis/Characterization and Novel Applications of MolecularSieve Materials, R.L. Bedard, T. Bein, M.E. Davis, J. Garces,V.A. Maroni, G.D. Stucky, 1991, ISBN: 1-55899-127-1

Volume 234—Modern Perspectives on Thermoelectrics and Related Materials,D.D. Allred, G. Slack, C. Vining, 1991, ISBN: 1-55899-128-X

Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society.






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