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TRANSCRIPT
Alpha-Power Law MOSFET Model and its
Applications to CMOS Inverter Delay
By Ken Kimura
CMOS Models
• Long Channel (Conventional) – width and length long enough so that edge
effects from the four sides can be neglected
• Short Channel – width and length short enough
such that the edge effects can not be neglected
Shot Channel MOS Device Characteristics
• Channel Length Modulation
• Threshold Voltage Roll-off
• Narrow Gate Width Effects
• Reverse Short Channel Effects
• Punch Through
• Mobility Degradation
• Velocity Saturation
Long Channel CMOS Device
Short Channel CMOS Device
Short Channel CMOS Device
2.000E+04
5.000E+04
0 0.5 1 1.5 2 2.5
Ch
ann
el E
lect
ric
Fie
ld (
V/c
m)
Channel Length (um)
MOSFET Channel Electric Field by Process
Short Channel CMOS Modeling
Short Channel CMOS Modeling
Short Channel CMOS Modeling
Effect on Delay Calculation
Effect of Source and Drain Resistance
Source: Intel’s Revolutionary 22 nm Transistor Technology, Bohr, Mistry, May, 2011
Questions?
Strained Silicon
Source: The Invention of Uniaxial Strained Silicon Transistors at Intel, Bohr, Jan 2007
Source: IBM's Strained Silicon Breakthrough
Conventional vs Tri-Gate Device
Source: Intel’s Revolutionary 22 nm Transistor Technology, Bohr, Mistry, May, 2011
Details of Tri-Gate Device
References
• T Sakurai and R Newton, “Alpha-Power Law MOSFET Model and its Applications to CMOS Inerter Delay and Other Formulas”, IEEE Journal of Solid State Circuits, Vol 25, No 2, April 1990 • M Bohr and K Mistry, “Intel’s Revolutionary 22nm Transistor Technology”, May 2011 • N Weste and D Harris, “CMOS VLSI Design”, 4th ed, Addison-Wesley, 2011 • D Neamen, “Semiconductor Physics and Devices”, 4th ed, McGraw-Hill, 2011 •M Bohr, “Source: The Invention of Uniaxial Strained Silicon Transistors at Intel”, Jan 2007 •IBM's Strained Silicon Breakthrough, http://www.research.ibm.com/resources/press/strainedsilicon/