ali shakouri
TRANSCRIPT
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A. Shakouri 12/16/2009
Ali ShakouriDirector, Thermionic Energy Conv. Center
Baskin School of EngineeringUniversity of California Santa Cruz
Nanoscale optothermo electricenergy conversiondevices
Acknowledgement: ONR,DARPA DSO, AFOSR, CEA,NSF,
NASA/UCSC (ARP, BIN-RDI)National Semiconductor,
Intel, Canon, SRC-IFC
UC Santa Barbara; 16 December 2009
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RejectedEnergy 61%
Lawrence Livermore National Lab., http://eed.llnl.gov/flow
Power ~3.3TW
1.3TW
A. Shakouri 2/13/2009
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A. Shakouri 12/16/2009US Energy Flow 1950
3
LLNL
EnergySources
EnergyConsumption
RejectedEnergy 49
Total 31.8 QuadPopulation: 161M
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Direct Conversion of Heat into ElectricityDirect Conversion of Heat into Electricity
)()()( 2
2
tyconductivithermal tyconductivielectrical Seebeck
Z
k S
Z
=
=
V~ S T
ElectricalConductor
Hot Cold
Efficiency function of thermoelectric figure-of-merit (Z)
R load = R TE internal
T V
S =Seebeck coefficient(1821)
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Power Generation Efficiencies of Different Technologies
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
400 600 800 1000 1200
ZTm=0.5ZTm=1ZTm=2ZTm=3Carnot limit
Thot (K)
0.5EnergyConversio
nEfficiency
3
1
2
Carnot
Solar/ Rankine
Geothermal/
Organic Rankine
ZTavg =20Coal/ Rankine
Cement/ Org.Rankine
Solar/ Stirling
ZT=S 2 /
Cronin Vining
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Impact of temperature on ICperformance15 oC temperature increase:
Interconnect delay (10-15%)Crosstalk noise increase (up to 25%)
Leakage power exponential increasewith temperature
60nm50-70% of total power Potential thermal runaway
Lifetime exponential decrease withtemperature (x ) e.g.electromigration, oxide breakdown
Clock gating and multithreshold CMOSincrease on-chip thermal variation
Thermal integrity: a must for low-power-ICdigital design, EDN 15 Sept. 2005
http://masc.cse.ucsc.eduFrancisco Mesa-Martinez, Jose Renau
http://masc.cse.ucsc.edu/http://masc.cse.ucsc.edu/ -
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Electric
Current
Heating Cooling= ST c I
Peltier Effect (1834)Peltier Effect (1834)
Reverse of Seebeck effect (electric currentproduces cooling/heating)
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Maximum coolingtemperature
Tmax = ZT c2
Fraction of
Carnot
Efficiency
0.1
0.4
0.3
0.2
ZT1 2 3 4
Commercial TEs
Typical CFC System
Thermoelectric (Peltier) Coolers
Conventional thermoelectricshave low efficiencies (COP of 0.5-1) and low cooling power density
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Recent Advances in Thermoelectrics
Recent advances innanostructuredthermoelectric materialsled to a sudden increase in (ZT) 300K > 1
A. Majumdar, Science 303, 777 (2004)
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Best Thermoelectric MaterialsBest Thermoelectric Materials
SS 2
Free carrier concentration
ThermalConductivity
Lattice contribution
Electronic contribution
Seebeck ElectricalConductivity
Insulator Semiconductor Metal
For almost all materials, if doping is increased, electrical conductivityincreases but Seebeck coefficient is reduced. Similarly
ZT=S 2 /
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A. Shakouri 12/16/2009Microrefrigerators on a chip
Heterostructure Integrated Thermionic Coolers;A. Shakouri and John Bower, Appl. Phys. Lett. 1997
Nanoscale heat transport and microrefrigerators on achip; A. Shakouri, Proceedings of IEEE , July 2006
Featured in Nature Science Update, Physics Today, AIP April 2001
1 m
Hot Electron Cold Electron Monolithic integration on silicon Tmax ~4C at room temp. (7C at100C) Cooling power density > 500W/cm 2
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100nsec ,time ,300nm spatial.0 1C temperature
resolution
Time ( s)
J. Christofferson,Y. Ezzahri et al.SemiTherm 2009and MRS Spring2009
1 10 100 1000
ransient Thermal Imaging ofMicrorefrigerators
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Metal film is heated by laser pulse and it acts both as a heatsource and a transducer (creates acoustic waves). It cancharacterize thermal interface resistances as well as interfacequality (acoustic mismatch).
Time (ps)
R(normalized)
Thin Film ThermalCharacterization
Thermal decay =>
KSi/SiGe(30%) =8.1W/mKKSi/SiGe(60%) =2.8W/mK
Acoustic echoes
Y. Ezzahri et al. Appl.Phys. Letters 2005
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p(t) p0
t0
p0 H(t)
If the thermal RC network is composed of N pairs of RC port, the unit-stepresponse, a(t) , can be expressed as:
( )( ) ( )
/
0 1
1 ii
N t
Thi
T t a t R e
== =
Temperature
Rise(K)
Time (sec)
Steady state
Szekely et al. 1988,Micred Corp.
hermal Step Function Excitation
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The unit-step response, a(t) , can be expressed as:
Logarithmic time scale
with
Time constant spectrum
1 2 3
R ( ) ( )/01
1 ii
N t
Thi
T t R e =
= R( ) ( ) ( )( )( )0 1 exp / expT t R t d
=
( )log =
( ) ( ) ( ) ( )( )( )0
1 exp expT z
a z R z d
= = ( )log z t =
Szekely et al. 1988
etwork Identificat ion byDeconvolution
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R thi C thi
Cauer network
R th1 R th2 R thi
C thiC th2C th1
R th1 R thn
C thn
R th2
C th1 C th2
Foster network
-oster Cauer Network Transformation
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30nm Al on top of 80nm superlattice (10W/mK) on Silicon substrate
Layer Inputproperty
NID
R th (K/W) 25.5 22.3Cth (J/K) 4.2x10 -11 5x10 -11
Rk=1e-8
3e-9Rk=0 Km 2/W
5e-9
7e-9
Y. Ezzahri and A. Shakouri, Rev. Sci. Instrument, 80 , 074903 (2009).
pplication of NID to Transient.hermoreflect
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A. A. Joshi and A. Majumdar; J. Appl. Phys. 74, p. 31 (1993)See also: G. Chen; Phys. Rev. Lett. 86, 2297 (2001)
i ffusive or Bal l is t ic Propagation ofHeat
Temperature (normalized)Tempera
Distance (norm.)
= /C
L=0.1 m
Diamond
Fourier
Hyperbolic Heat(Cattaneo)
Boltzmann (EquationPhonon Radiative Transfer)
Fourier
Hyperbolic
Boltzmann
Fourier
Hyperbolic
Boltzmann
=0.
1
=1
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N 2: The Greens function of the total energy density propagation K(t,x) in a solid material when there is delta-function excitation P(t)
q total relaxation time of energy carriers (funct. of wavevector q)DQ heat diffusion constantDC charge diffusion constant
coupling factor betweencharge and energy density
Z*
high frequency limit of figure of merit
*
*1 Z T
Z T =
+
( ) ( )( )
( )
( ) ( )
2 2
22
2 2 4
,,
1Q q C
q Q q C Q C
K q i q N q M P
D qM i i D q
i iD q i iD q D D q
= =
= + = + + +
B. S. Shastry, Rep, Prog, Phys72 , 016501, (2009)
:hastry s formalism energy densitypropagation
P(t)
K(t,x)
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Oscillations in the total energy density at the top free surface of the metal:due to Bragg reflection of ballistically accelerated electrons at the boundaries
of the Brillouin Zone. Energetic analog of conventional Bloch Oscillations of electrons.
2 3 (1 ) F
a fs
v = Damped oscillation of period
independent of F
and temperature
Diffusivecontribution toenergy transport(heat propagation)
Ballisticcontribution toenergy transport
a : lattice constant.v F : Fermi velocity.
Y. Ezzahri and A. Shakouri PRB, 79, 184303, (2009)
nergetic Bloch Oscillations( )hastry Osci llations
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Phonon minibands in SiGe superlattices
Y. Ezzahri et al. Physical Review B, 2007
Superlattice
Pho
Measuredphonon
spectrum
Calculation
527GHz
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A. Shakouri 12/16/2009Superlattice SiGe/Si vs. Bulk SiGe
Younes Ezzahri et al.InterPACK07, THERMES 07
Material
Thermal
Conductivity(W/mK)3 measurement
Power
factor S2
(10 -3 W/K 2m)
Figure-of-
Merit,ZTSi0.8 Ge 0.2 alloy (Microrefrigerator Tmax =4.0K)
5.9 1.6 0.08Superlattice Si/Si 0.75 Ge0.25 (3nm/12nm) (Microrefrigerator Tmax =4.2K)
6.8-8.7 2.2 0.085
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Thermal Conductivity of SiGesuperlattice vs. SiGe alloy
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A. Shakouri 12/16/2009Thin Film Microrefrigerator Optimization
Current SiGematerial
Decrease thermalconductivity
IncreaseSeebeck coef.
IncreaseSeebeck coef.
Decrease thermalconductivity
Younes Ezzahri et al. InterPACK07
10 microns thick, 50x50 m 2 monolithic microrefrigerator
with ZT~0.5 can cool a 1000W/cm2
hot spot by >15C.
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A. Shakouri 12/16/2009Silicide nanoparticles in SiGe
300K0.8% nanoparticles
Silicon
Si 0.5 Ge 0.5Ge
NiSi2
ZT (300K) ~0.5
ZT (900K) ~1.8
Natalio Mingo et al. Nano Letters 2009
Predictions:
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Monte Carlo simulation of TE energy exchange
InGaAs InGaAsP InGaAs
Heat Sink Anode
Bias
Hot SourceCathode
Cathodecontactlayer
Anodecontactlayer
Barrier (main-layer)
Mona Zebarjadi, Keivan Esfarjani,Ali Shakouri (Phys. Rev. B 2006)
LargeSeebeck
Q =- S.T c .I
electrons
SmallSeebeck
SmallSeebeck
Q = S.T h.I
A f l t /T (i
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Average energy of electrons /T (i.e.local Seebeck coefficient) vs. distance
Increasingvoltage
200
160
120
8040 mV
Mona Zebarjadi, Keivan Esfarjani, A. Shakouri Applied Physics Letter 2007
Large Seebeck Small Seebeck(contact)Small Seebeck
(contact)
Local Seebeckcoefficient( V/K)
2E23
B J)3
52
(ne
m2e
T5k e +++=
O ti i TE Effi iOptimi e TE Efficienc
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0
1
2
3
4
5
6
7
8
-1
0
1
2
3
4
5
0 2 4 6 8 10 12 14
Z T
( E b ar r i er -E f
) / k BT
Fermi Energy (eV)
Conserved
Non-conserved
Optimize TE Efficiency:Optimize TE Efficiency:(Metal/Semiconductor Nanocomposites)(Metal/Semiconductor Nanocomposites)
Assume: lattice =1W/mK, mobility ~10cm 2/Vs
Even with only modestly low lattice thermal conductivity and electron
mobility of typical metals, ZT > 5 is possible with hot electron filters
Fermi energy eV ( free electronconcentration)
Planar Barrier
Metal/Semiconductor
Nanostructure
. . ,D Vashaee and A Shakouri . . .Phys Rev Lett 92 , / ( ).106103 1 2004
Hot and coldelectrons inequilibrium
Hotelectronfilter
h i i C i C
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Ali Shakouri , Director Thermionic Energy Conversion Center
ONR (2003-), DARPA(2008-)
4nm(Zr, W)N
2nm ScN
UCSC (Bian, Kobayashi), Berkeley (Majumdar), BSST Inc. (Bell), Delaware (Zide), Harvard (Narayanamurti), MIT (Ram), Purdue (Sands), UCSB
(Bowers, Gossard)
Engineering current andheat flow usingnanostructures Goal: direct conversionof heat into electricitywith > 20-30% efficiency(ZT>2.5)
ErAs Semi metal Nanoparticles
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ErAs Semi-metal Nanoparticlesimbedded in InGaAs Semiconductor Matrix
Erbium is co-deposited at a growth rate which is a fixed fractionof the InGaAs growth rate (MBE growth, 60 microns thick films)Solubility limit is exceeded islands are formed
RandomErAsparticles~ 2-3 nm
HAADF/STEM of ErAs Embedded
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HAADF/STEM of ErAs EmbeddedNanoparticles in In 0.53 Ga 0.47 As
,n GasEr
1nm
Growth direction
D. O. Klenov, D. C. Driscoll, A. C. Gossard, S. Stemmer, Appl.Phys. Lett. 86 , 111912 (2005)
STEM: ErAs particles have rocksalt structure
The As sublattice is continuousacross the interface
Beating the Alloy Limit in ThermalBeating the Alloy Limit in Thermal
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Temperature [K]
0 200 400 600 800
T h e r m a l
C o n
d u c t
i v i t y
[ W / m - K
]
0
3
6
InGaAs
0.3% ErAs:InGaAs
3% ErAs:InGaAs
6% ErAs:InGaAs
Beating the Alloy Limit in ThermalBeating the Alloy Limit in ThermalConductivity: Theory/ ExperimentConductivity: Theory/ Experiment
W. Kim, et al. PhysicalReview Letters 2006
Phonon scattering by ErAs nanoparticles 3-fold reduction in thermal conductivity beyond the alloy limit
a k
F r e q u e n c y
Wavevector
)(k
Atoms/AlloysNanostructures
a k
F r e q u e n c y
Wavevector
)(k
a k
F r e q u e n c y
Wavevector
)(k
Atoms/ AlloysAtoms/AlloysNanostructuresNanostructures
M bili ( h )
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Je-Hyeong Bahk, Mona Zebarjadi et al. submitted (2009)
Mobility (Theory vs. Experiment)
S b k ( h i )
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Solid lines aretheoretical prediction (no f i t t ing)
Seebeck (Theory vs. Experiment)
Scattering
mechanisms: Polar optical phononsAcoustic phononsIntervalley phononsImpurity
Alloy scatteringNano particle scattering:
(Born, Partial Wavetechnique)
100
120
140
160
180200
220
240
260
300 400 500 600 700 800 900
n-InGaAlAs (control)ErAs:InGaAlAs
(b)
S e e b e c
k C o e
f f i c i e n t
( V / K )
T (K)
. % :0 6 ErAs InGaAlAs
Control( ,2E18 Si no
)Er
Je-Hyeong Bahk, Mona Zebarjadi et al. submitted (2009)
Th l t i fi f it (ZT)
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Thermoelectric figure-of-merit (ZT)
J. Zide et al. submitted (2009)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
300 400 500 600 700 800
n-InGaAlAs (control)ErAs:InGaAlAs
Z T
T (K)
. % :0 6 ErAs InGaAlAs
Refractory (Zr W)N/ScN Metal/SemiconductorRefractory (Zr W)N/ScN Metal/SemiconductorRefractory (Zr W)N/ScN Metal/SemiconductorRefractory (Zr W)N/ScN Metal/Semiconductor
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4 nm (Zr,W)N
2 nm ScN
ZrN layers alloyed with W 2N Reduction in thermal conductivity Closer lattice match with ScN layer
/ ( , ) / HAADF STEM image of Zr W N ScN : superlattice Courtesy Joel Cagnon and
,Susanne Stemmer UCSB
Refractory (Zr,W)N/ScN Metal/Semiconductor Refractory (Zr,W)N/ScN Metal/Semiconductor Superlattices for Higher Temperature OperationSuperlattices for Higher Temperature OperationRefractory (Zr,W)N/ScN Metal/Semiconductor Refractory (Zr,W)N/ScN Metal/Semiconductor Superlattices for Higher Temperature OperationSuperlattices for Higher Temperature Operation
V. Rawat, T. Sands, J. Cagnon, S. Stemmer et al. 2008
Thermal conductivity reduction in metal/Thermal conductivity reduction in metal/
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Thermal conductivity reduction in metal/Thermal conductivity reduction in metal/semiconductor nitride superlatticessemiconductor nitride superlattices
2-fold decrease in thermal conductivity of ZrN/ScN superlattices
to
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Cross-plane electrical conductivity
0
0.5
1
1.5
2
2.5
3
250 300 350 400 450 500
ExperimentSimulation
T (K)
dEc=0.97 eV
ElectricalConductivity(
-1-cm-1)
ScN(6 nm)/ZrN(4 nm)superlattice
Fit to I-V-T yields barrier height of 280 meV
Transport is thermionic
S(300K) meas = 0.82 mV/K
Purdue and UCSC
M.Zebarjadi, V. Rawat et al. Journal of Electronic Materials 2009
Z N/S N ZT di i
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Model assumes 5 x 10 21 carriers/cm 3 in
ZrN m* (ZrN) = 1.5 m 0 m* (ScN) = 0.2 m 0 100 periods of metal(4
nm) / semiconductor(6nm)
= 1.8 W/m-K Mobility from in-plane
measurement of ScN k not conserved
Electronic BTE using energy balance formulation
.
.
.
. . . .9 .9 .
K K
9 K9 K
K K K K
Z T
dEc (eV)
ZT
Fit with experiment gives Ec of 0.97 eV and B = 0.28 eV
Ec [eV]
M.Zebarjadi, V. Rawat et al. Int. Thermoelectric Conf. 2008
W f l d l f b i i
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AlN_low pIate
200 elements of p-ErAs array
Wafer scale module fabrication
AlN_upper plate
200 elements of n-ErAs array
AlN_low plate
AlN_upper plate20 m elements
400 element generator Gehong Zeng, John Bowers (UCSB)
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140 m/140 m AlN
400 elements (10-20 microns ErAs:InGaAlAs thin films,120x120 m 2), array size 6x6 mm 2
G. Zeng, J. Bowers, et al.(UCSB, UCSC) Appl. Physics
Letters 2006
0
0.5
1
1.5
2
2.5
3
0 20 40 60 80 100 120 140
10 m module
20 m module
O u t p u t
P o w e r
( W / c m
2 )
T (K)
Working with BSST on high power density moduledemonstration
Mi i R f iMi i t R f i t
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EntropyDecrease
EntropyIncrease
Cathode Barrier Anode
Energy
ConductionBand
A. Shakouri, International Thermoelectric Conference Proceedings, 1998
S d L f Th d i ?S d L f Th d i ?
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Cathode Barrier Anode
Energy
ConductionBand
Second Law of Thermodynamics?Second Law of Thermodynamics?
EntropyDecrease
A. Shakouri, International Thermoelectric Conference Proceedings, 1998
I j ti C t I t ll C l d Light E ittInjection Current Internally Cooled Light Emitter
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Injection Current Internally Cooled Light Emitter Injection Current Internally Cooled Light Emitter
n p
Kevin Pipe, Rajeev Ram and Ali Shakouri, Photonic Techn. Lett., Apr. 2002
0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0- 4 0 0
- 2 0 0
0
2 0 0
4 0 0
6 0 0
Joule
Contact
Conv. q Active
ICICLE q Active
Current Density (A/cm 2)
q(W/cm
2)
0 1 2 3 4-2.2
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
GaSb/GaInAsSb.
Electrically pumpedoptical refrigeration
Optimal Internal Cooling in Diodes
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0 0.5 1 1.5 2
-40
-20
0
20
40
Temperature(K)
6 10 5
J = 8 10 5 A/cm 2
5 10 54 10 5
2 10 5
Position (micron)
Optimal Internal Cooling in Diodes
Kevin Pipe, Rajeev Ram and Ali Shakouri, PRB 2002
HgCdTe diode
holes
electrons
NPIheat cool cool
heatcool cool
S t i bl E Ch ll
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John Bowers, UCSB
World Average
Sustainable Energy Challenge
A FRAMEWORK FOR PRO-ENVIRONMENTAL
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A FRAMEWORK FOR PRO ENVIRONMENTALBEHAVIOURSDefra January 2008
The headline behaviour goals
-Install insulation; microgeneration-Increase recycling-Waste less (food)-More responsible water usage-Use car less for short trips; more efficient vehicles-Avoid unnecessary flights (short haul)-Buy energy efficient products-Eat more food that is locally in season-Adopt lower impact diet
Elizabeth Shove, Sociology Department, Lancaster University, UKhttp://www.soe.ucsc.edu/classes/ee080j/Spring09/
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A h a !
Practicalconsciousness
Awareness and choice
Informs a lot of discussion about how to engender sustainabilityConsiders habits in isolationOften implausible in terms of daily routines e.g. comfort, cleanliness
Elizabeth Shove, Spring 2009http://www.soe.ucsc.edu/classes/ee080j/Spring09/
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choice, change, belief , attitude,
information, behaviour
But what if we see consumption as
consequence of ordinary practice?What is required in order to be a normalmember of society?
How does this change, and with whatconsequence for sustainability?
Elizabeth Shove, Spring 2009http://www.soe.ucsc.edu/classes/ee080j/Spring09/
Comfort and indoor environments
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it is becoming normal to expect 22degrees C inside, all year round, allover the world and whatever theweather outside
Cleanliness and showeringit is becoming normal to shower once or
twice a day (in the UK, the amount of water used for showering is expected toincrease five fold between 1991-2021)
LaunderingFrom once a week to once a day or more, but with lower temperatures thanever before
Similar trends naturalisation of need
but possibly differentdynamics
and differentimplications for thefuture
Comfort, cleanliness and convenience By Elizabeth Shove, 2003
Comfort and indoor environments
Thermal comfort research
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Thermal comfort research
Defining
comfort
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Reflexive/conspicuous consumption
Routine/ordinary consumption
Where mosteffort hasfocused
Where the realchallenges lie
Individual belief, attitude, behaviour,information, persuasion
Practice, convention, routine, dynamicsof sociotechnical systems, structuring of options, standardisation, globalisation
Elizabeth Shove, Spring 2009http://www.soe.ucsc.edu/classes/ee080j/Spring09/
International Summer School in
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CA/Denmark Program
UC Santa Cruz; UC Davis; UC MercedTech. University of Denmark; Aarhus;Copenhagen; Roskilde (2008)
CurriculumGuest Lectures by Experts (technology,policy, business, social issues)
Extensive Field trips; student projects
Renewable Energy Microgrid /Sustainable
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gy gCommunity Development at NASA Ames
Ken Kay Associates,
William Berry, UniversityAssociates LLC, et al.
US-China Green Tech Conf.,Beijing, China, Nov. 2009
(UCSC, NASA, Foothill/De Anza College, etc.)
Summary
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Metal / semiconductor nanocomposites can improve
thermoelectric energy conversion Mid/long wavelength phonon scattering Hot electron energy filtering
Micro Refrigerators on a Chip Localized cooling (10 150 m, 4-7C), based on SiGe, InP, > 500
W/cm 2
Fast transient thermal imaging using thermoreflectance Resolution: ~250nm, 0.01C, 100ns
Network identification by deconvolution for transientthermal analysis; Ballistic/diffusive energy transport
Renewable energy and sustainable developmenteducation and Research
Summary
Acknowledgement
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A. Shakouri 12/16/2009Acknowledgement
Mona Zebarjadi (UCSC) - Material Research Society Gold Graduate StudentAward , Boston, MA 2007
Yan Zhang, James Christofferson, et al. (UCSC/UCSB) IEEE Transactions onComponents and Packaging Best Paper Award 2006
Je-Hyoung Park, Xi Wang, Yan Zhang (UCSC) - Student Award, AdvancedThermal Workshop International Microelect. Packaging Society , 2005-2009
Daryoosh Vashaee (UCSC), Joshua Zide (UCSB) , Xiaofeng Fan (UCSB) -Goldsmid Award (Best Graduate Student Research) , International
Alumni: Daryoosh Vashaee (Prof. Oklahoma State) , Yan Zhang(Tessera) , Rajeev Singh (Sun Power), Zhixi Bian (Adj. Prof. UCSC), James Christofferson (Res. Scientist UCSC), Kazuhiko Fukutani(Canon) , Javad Shabani (PhD student, Princeton), Younes Ezzahri (Prof.Univ. Poitier) , Mona Zebarjadi (MIT), Je-Hyoung Park (Samsung) ,Tammy Humphrey, Virginia Heriz, Travis Kemper
Postdocs/Graduate Students: Helene Michel, Xi Wang, Kerry Maize, Hiro
Onishi, Tela Favaloro, Paul Abumov, Phil Jackson, Oxana Pantchenko,Amirkoushyar Ziabari