ald high-k and higher-k integration on gaas · ald high-k and higher-k integration on gaas ozhan...
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![Page 1: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/1.jpg)
ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu 1), Yiqun Liu 2), Jun-Jieh Wang 2),
Roy G. Gordon 2), and Peide D. Ye 1)*
1) School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, U.S.A.
2) Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, U.S.A.
*Email: [email protected]
Silicon-based CMOS devices with traditional structures are approaching fundamental physical limits. Researchers are looking for ways to continue the trend of scaling by using alternative materials such as Ge and III-V compound semiconductors that could out-perform Si-based CMOS. Although significant progress is made on InGaAs MOSFETs with ALD high-k dielectrics (Al2O3, HfO2, HfAlO, and ZrO2), GaAs MOSFETs remain a big challenge, mostly showing minuscule drain currents. In this paper, we report on the strong dependence of the electrical properties on different GaAs surface orientations. (111)A Ga polar surface is much more forgiving in terms of Fermi-level pinning for n-channel GaAs MOSFET as shown in Fig.1, compared to (100) Ga-As non-polar surface. It might be directly related with ALD surface chemistry and could be explained by the trap neutral level model. In order to further scale down the equivalent oxide thickness (EOT) of dielectrics, the integration of ALD higher-k (LaLuO3) on GaAs was systematically studied. The precursors lanthanum tris(N,N'-diisopropylformidinate), and lutetium tris(N,N'-diethylformamidinate) reacted with water vapor at 350 oC. The dielectric structures are shown in Fig.2. Fig. 3 shows multi-frequency CV characteristics on n-type and p-type MOS capacitors on GaAs (100) surface with 2 nm Al2O3/8 nm LaLuO3/2nm Al2O3 as composite dielectric (structure A in Fig. 2). The observed frequency dispersion at accumulation capacitance is comparable to that of pure ALD Al2O3. Meanwhile, LaLuO3 with k = 25 to 30 provides a significant advantage in capacitance values. The work verifies the potential to integrate ALD higher-k dielectrics on III-V and deliver 1-2 nm EOT dielectrics by ALD for aggressively scaled ultimate CMOS technology.
0.0 0.5 1.0 1.5 2.00
2
4
6
8
10
12
14
16ALD Al2O3 (8nm)/GaAs (111)A VGS from 0V to 5.5Vin steps of 0.5VLCH=0.75 µ µ µ µm
Dra
in C
urre
nt I D
S(m
A/m
m)
Drain Voltage VDS(V)
Figure 1 I-V characteristics of an NMOSFET on GaAs (111)A surface with 8nm ALD Al2O3 as gate dielectric.
GaAs n-type or p-type(100) or (111)A
8nm LaLuO3
2nm Al O2 3
2nm Al O2 3
GaAs n-type or p-type(100) or (111)A
8nm LaLuO3
2nm Al O2 3
GaAs n-type or p-type(100) or (111)A
8nm LaLuO3
2nm Al O2 3
GaAs n-type or p-type(100) or (111)A
8nm LaLuO3
(A) (B) (C) (D)
Figure 2 Four LaLuO3 higher-k dielectric structures on GaAs.
-5 -4 -3 -2 -1 0 1 2 3 41.00E-011
2.00E-011
3.00E-011
4.00E-011
5.00E-011
6.00E-011
7.00E-011
8.00E-011
p-GaAs(100) substratePDA@600oC,30s
500Hz 10KHz 100KHz
As-deposited 500Hz 10KHz 100KHz
Cap
acita
nce
(F)
Gate Voltage (V)-4 -3 -2 -1 0 1 2 3 4 5
0.00E+000
1.00E-011
2.00E-011
3.00E-011
4.00E-011
5.00E-011
6.00E-011
7.00E-011
8.00E-011
n-GaAs(100) substratePDA@600oC,30s
500Hz 10KHz 100KHz
As-deposited 500Hz 10KHz 100KHz
Cap
acita
nce
(F)
Gate Voltage (V)
Figure 3 Multi-frequency CV of p-type and n-type GaAs MOS capacitors with the process splits of as-grown and 600oC post -deposition anneal (PDA). The diameter of the capacitors is 100μm.
![Page 2: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/2.jpg)
AL
Dhi
ghA
LD
high
kkan
dhi
gher
and
high
erkk
inte
grat
ion
onin
tegr
atio
non
GaA
sG
aAs
AL
Dhi
ghA
LD
high
--kkan
dhi
gher
and
high
er--kk
inte
grat
ion
onin
tegr
atio
non
GaA
sG
aAs
O. K
oyba
si 1 ,
M. X
u 1 ,
Y. L
iu 2 ,
J.-J
. Wan
g 2
RG
Gor
don
2an
dP
DY
e1
R.G
.Gor
don
2an
dP.
D.Y
e1
1. S
choo
l of E
lect
rical
and
Com
pute
r Eng
inee
ring,
fp
gg,
Purd
ue U
nive
rsity
2. D
epar
tmen
t of C
hem
istry
and
Che
mic
al B
iolo
gy,
Har
vard
Uni
vers
ity
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
y
Ye’s
Gro
up, E
CE
ALD
200
97.
20.
200
9
![Page 3: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/3.jpg)
Out
line
Out
line
Mot
ivat
ion
Mot
ivat
ion
Brie
f res
ults
on
ALD
Al 2O
3/GaA
s(11
1)A
MO
SFET
ALD
Hig
her-
kLa
LuO
3de
posi
tion
proc
ess
ALD
Hig
her-
kLa
LuO
3on
GaA
s(11
1)A
and
(100
)sur
face
sA
LDH
ighe
rk
LaLu
O3
onG
aAs(
111)
Aan
d(1
00)s
urfa
ces
---4
diff
eren
t MIS
stru
ctur
es a
re u
sed
to in
vest
igat
e
Sum
mar
y
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
![Page 4: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/4.jpg)
Mot
ivat
ion
Mot
ivat
ion
1.Tr
aditi
onal
III-
V: h
igh
freq
uenc
y an
d/or
hig
h po
wer
app
licat
ions
; N
ew II
I-V
thru
st: h
igh
perf
orm
ance
logi
c ap
plic
atio
nsSi
bd
CM
OS
lii
ib
di
2015
Siba
sed
CM
OS
scal
ing
is g
oing
to b
e en
din
2015
.Fo
r 22
nm
tech
nolo
gy n
ode
beyo
nd, i
t req
uire
s no
vel c
hann
el m
ater
ials
such
asI
II-V
and
hig
h-k
2.T
he a
dvan
tage
of I
II-V
as c
hann
el m
ater
ials
is h
igh
elec
tron
mob
ility
.
3.A
dvan
tage
ofA
LD
high
-k:
3.
Adv
anta
geof
AL
Dhi
ghk:
---c
omm
erci
al A
LD
tool
s are
ava
ilabl
e--
-AL
D se
lf-cl
eani
ng e
ffec
t on
III-
V
---s
i gni
fican
tpro
gres
s on
III-
V M
OSF
ET
gp
gin
the
past
3-5
yea
rs u
sing
AL
D--
-eas
y tr
ansf
er to
Si C
MO
S pl
atfo
rmS
iIn
0.53
Ga 0
.47A
sIn
As
InS
bS
ist
rain
ed S
ibu
lk G
eG
aAs
GaA
sG
aNG
aNIn
PIn
PIn
0.53
Ga 0
.47A
sIn
As
InS
b
Si M
OS
FET
(Inte
l)
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
μe40
01,
000
3,90
08,
500
8,50
01,
250
1,25
05,
400
5,40
08,
000
20,0
0030
,000
μ h16
024
01,
800
300
500
800
E g(e
V)
1.1
1.1
0.66
1.42
1.42
3.4
3.4
1.35
1.35
0.72
0.36
0.18
μe40
01,
000
3,90
08,
000
20,0
0030
,000
μ h16
024
01,
800
400
400
850
850
200
200
300
500
800
E g(e
V)
1.1
1.1
0.66
0.72
0.36
0.18
![Page 5: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/5.jpg)
Inve
rsio
n G
aAs M
OSF
ET
: A H
isto
rica
l Dile
mm
a In
vers
ion
GaA
s MO
SFE
T: A
His
tori
cal D
ilem
ma
Mos
t of i
nver
sion
GaA
s NM
OSF
ETs h
ave
min
uscu
le d
rain
cur
rent
( <
1 m
A/m
m).
FR
enet
alSo
lidSt
ate
Elec
troni
cs41
1751
(199
7)-F
.Ren
etal
.Sol
id-S
tate
Elec
troni
cs41
,175
1(1
997)
-Y. X
uan
et a
l. A
ppl.
Phys
. Let
t. 88
, 263
518
(200
6)
-D. S
hahr
jerd
i et a
l. A
ppl.
Phys
. Let
t. 92
, 203
505
(200
8)
-any
man
y ot
hers
in 7
0s a
nd 8
0s.
New
Sol
utio
n : o
ur r
esul
ts o
n G
aAs(
111)
A(n
ext s
lide)
Alte
rnat
ives
:
(1) I
n-ric
h In
GaA
s (se
e re
cent
wor
k by
Pur
due,
Inte
l, IB
M, N
THU
, UC
SB…
)
Pote
ntia
liss
ue:n
arro
wba
ndga
pm
ater
ial
band
-to-b
and
tunn
elin
gPo
tent
iali
ssue
:nar
row
band
gap
mat
eria
l,ba
ndto
band
tunn
elin
g,…
(2) S
i int
erfa
cial
con
trol l
ayer
or S
iH4
pass
ivat
ion
on G
aAs (
see
rece
nt w
ork
by U
T A
ustin
, Int
el, S
UN
Y A
lban
y, IB
M, N
US,
UT
Dal
las,…
.)
ili
ddii
lSiO
iO
ii
hi
l
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
Pote
ntia
liss
ue:a
dditi
onal
SiO
2in
crea
ses E
OT,
inve
rsio
n m
echa
nism
unc
lear
,…
![Page 6: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/6.jpg)
Inve
rsio
n N
MO
SFE
T o
n G
aAs(
111)
A w
ith A
l 2O3
45
(A/m)
VG
S 0
~4V
in s
teps
of 0
.5V
x 10
-4
GaA
s(10
0)Lg
=4m
123
ain Current IDS
Lg4
m
GaA
s (1
00)
(111
)A G
a po
lar
(100
) Ga-
As
un-p
olar
0.0
0.5
1.0
1.5
2.0
0
Dra
Dra
in V
olta
ge V
DS (V
)
I DS=3
.5x1
0-4
A/
mX
100,
000
Exp
lain
ed b
y an
em
piric
al m
odel
Bas
ed o
n tra
p ne
utra
l lev
el s
hift
243036
tIDS (A/m)
VG
S 0
~4V
in s
teps
of
0.5V
GaA
s(11
1)A
Lg=4
m
GaA
s(1
11)A
00
05
10
15
20
061218
Drain Current
GaA
s(1
11)A
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11[*
M. X
u et
al,
AP
L, 9
4, 2
1210
4, 2
009]
[* W
.E.S
pice
et a
l, JV
ST,
16(
5), 1
979]
0.0
0.5
1.0
1.5
2.0
D
rain
Vol
tag
e V
DS
(V
)
D
I DS=3
0 A
/m
![Page 7: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/7.jpg)
Hig
her
Hig
her--
kkon
GaA
s for
EO
T sc
alin
gon
GaA
s for
EO
T sc
alin
g
Furth
er a
pplic
atio
n lim
ited
due
to th
e sm
all k
valu
e (8
~9) o
f Al 2O
3
Impl
emen
tatio
n of
hig
her-k
gate
die
lect
ric L
aLuO
3w
ith k
=24~
26!!!
Que
stio
ns:
Que
stio
ns:
How
to in
tegr
ate
high
er-k
LaL
uO3
on G
aAs
or II
I-V ?
Is it
feas
ible
to in
tegr
ate
LaLu
O3
dire
ctly
on
GaA
s ?
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
![Page 8: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/8.jpg)
Hig
her
Hig
her--
kkdi
elec
tric
dep
ositi
on p
roce
ssdi
elec
tric
dep
ositi
on p
roce
ss
H2O
FurnaceHeater
FurnaceHeater
N2
Pump
Lu
La
120
o C115
o C
Diti
MO
pre
curs
ors
Oxi
dant
Bub
bler
tem
p.D
epos
ition
tem
p.La
2O3
: Lu 2
O3
La(a
md)
3Lu
(am
d)3
DI H
2O12
0oC
for L
a11
5oC
for L
u35
0o C
1:1
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11[*
pro
vide
d by
Y. L
iu in
Pro
f. R
oy G
ordo
n’s
grou
p at
Har
vard
]
![Page 9: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/9.jpg)
Req
uire
men
ts fo
r hi
gher
Req
uire
men
ts fo
r hi
gher
--kkin
tegr
atio
nin
tegr
atio
n
Hig
her-k
Met
al E
lect
rode
Com
patib
le?
Com
patib
le?
(4)
GaA
s
Diff
eren
t MIS
stru
ctur
es to
be
stud
ied
each
stru
ctur
e sp
lits
into
two:
• as-
depo
site
d
• PD
A@
600o
C,3
0s in
N2
8nm
LaLu
O
2nm
Al 2O
3
Ni G
ate
8nm
LaLu
O
Ni G
ate
2nm
Al 2O
3
Ni G
ate
8nm
LaL
uO3
2nm
Al 2O
3
GaA
s(11
1)A
or(1
00)
8nm
LaL
uO3
2nm
Al 2O
3
GaA
s(11
1)A
or(1
00)
8nm
LaL
uO3
2nm
Al 2O
3
GaA
s(11
1)A
or(1
00)
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
GaA
s(11
1)A
or (1
00)
GaA
s(11
1)A
or (1
00)
GaA
s(11
1)A
or (1
00)
(1)
(2)
(3)
![Page 10: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/10.jpg)
CC--V
cha
ract
eris
tics o
n p
V c
hara
cter
istic
s on
p--ty
pe G
aAs
type
GaA
s
200
160
200
w/ P
DA a
s-de
posi
ted
(pF)
2nm
Al 2O
3
Ni G
ate
Fi
80120
citance
8nm
LaL
uO3
23
2nm
Al 2O
3
Freq
uenc
ies:
50
0Hz
10K
Hz
100K
Hz
-5-4
-3-2
-10
12
34
40
Capac
GaA
s(11
1)A
or (1
00)
Cap
acita
nce
incr
ease
d af
ter a
nnea
ling
due
to w
ater
-ads
orpt
ive
prop
erty
of L
a-ba
sed
diel
ectri
c
54
32
10
12
34
Gat
e Vo
ltage
(V)
diel
ectri
cA
ll p-
type
GaA
s MO
S C
Vs a
re “
good
-look
ing”
with
less
freq
uenc
y-di
sper
sion
at
accu
mul
atio
n, w
hich
incl
udes
(100
), (1
11)A
with
Al 2O
3, H
fO2,
HfA
lO a
nd L
LO.
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
It re
late
s with
ALD
“se
lf-cl
eani
ng e
ffect
” on
As 2
O3,
As 2
O5,…
(se
e Fr
ank
et a
l. 20
05,
Hua
ng e
t al.
2005
, Hin
kle
et a
l. 20
07, a
nd o
ther
s) a
nd lo
wer
hal
f ban
d-ga
p of
GaA
s has
less
pr
oble
m.
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CC--V
cha
ract
eris
tics o
n St
ruct
ure
(1)
V c
hara
cter
istic
s on
Stru
ctur
e (1
)16
0
/PD
A
80120
160
w/P
DA
as-
depo
site
d
ance (pF)
NiG
ate
-4-3
-2-1
01
23
45
040
Capacita
Gat
eVo
ltage
(V)
8nm
LaL
uO3
2nm
Al 2O
3
Ni G
ate
n-G
aAs(
100)
Freq
uenc
ies:
50
0Hz
Gat
eVo
ltage
(V)
120
160
w/ P
DA
as-
depo
site
d
ce (pF)
2nm
Al 2O
3
GaA
s(11
1)A
or (1
00)
500H
z10
KH
z10
0KH
z
4080120
Capacitanc
EOT:
~3.
3nm
n-G
aAs(
111)
A
Freq
uenc
y di
sper
sion
on
(111
)A is
bet
ter t
han
that
on
(100
)
-4-3
-2-1
01
23
45
40
Gat
e Vo
ltage
(V)
()
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
Low
er D
ital
ong
uppe
r hal
f ban
d-ga
p of
GaA
s(11
1)A
EO
T~3.
3nm
,kva
lue
is e
xtra
cted
to b
e ~2
4
![Page 12: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/12.jpg)
CC--V
cha
ract
eris
tics o
n St
ruct
ure
(2)
V c
hara
cter
istic
s on
Stru
ctur
e (2
)
120
160
200
w/ P
DA
as-
depo
site
d
ance (pF)
-4-3
-2-1
01
23
45
04080
Capacita
8nm
LaLu
O3
Ni G
ate
n-G
aAs(
100)
160
200
240
w/ P
DA
as-
depo
site
d
e (pF)
Gat
e Vo
ltage
(V)
8nm
LaL
uO3
2nm
Al 2O
3
GaA
s(11
1)A
or (1
00)
4080120
160
Capacitance
EOT:
~2.
3nm
()
()
n-G
aAs(
111)
A
Cap
acita
nce
incr
ease
d as
exp
ecte
d an
d EO
T sc
aled
dow
n to
2.3
nm
-4-3
-2-1
01
23
45
CG
ate
Volta
ge (V
)
nG
aAs(
111)
A
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
Exac
tly d
ue to
the
rem
oval
of A
l 2O3
capp
ing
laye
r of 1
nm E
OT
No
addi
tiona
l int
erfa
ce la
yer i
ntro
duce
d by
met
al/h
ighe
r-kdi
rect
con
tact
![Page 13: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/13.jpg)
CC--V
cha
ract
eris
tics o
n St
ruct
ure
(3)
V c
hara
cter
istic
s on
Stru
ctur
e (3
)
NiG
ate
NiG
ate
8nm
LaL
uO3
2nm
AlO
Ni G
ate
8nm
LaL
uO3
2nm
Al 2O
3
Ni G
ate
2nm
Al 2O
3
GaA
s(11
1)A
or (1
00)
3
GaA
s(11
1)A
or (1
00)
160
200
240
280
w/ P
DA a
s-de
posi
ted
e (pF)
160
200
240
w/ P
DA a
s-de
posi
ted
ce (pF)4080120
160
apacitanc
4080120
Capacitancn-
GaA
s(11
1)A
n-G
aAs(
111)
A
-4-3
-2-1
01
23
45
40
C
Gat
e Vo
ltage
(V)
Surp
risin
gly,
cap
acita
nce
didn
’t ob
viou
sly
incr
ease
d af
ter a
nnea
ling
-4-3
-2-1
01
23
45
40C
Gat
e Vo
ltage
(V)
nG
aAs(
111)
An
GaA
s(11
1)A
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
Som
e in
terf
acia
l lay
er m
ay b
e in
trodu
ced
at h
ighe
r-k/G
aAs i
nter
face
Will
this
ext
ra-la
yer i
nflu
ence
the
inte
rfac
e qu
ality
?
![Page 14: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/14.jpg)
Inte
rfac
e Tr
ap D
ensi
ty o
n G
aAs(
111)
AIn
terf
ace
Trap
Den
sity
on
GaA
s(11
1)A
253035
Al 2O
3/n-G
aAs(
111)
A (c
ontro
l) A
l 2O3/L
aLuO
3/n-G
aAs(
111)
A (3
)Al
O/L
aLuO
/AlO
/n-G
aAs(
111)
A(1
)
V-1)
152025
Al2O
3/LaL
uO3/A
l 2O3/n
GaA
s(11
1)A
(1)
2 cm-2eV
0510 it(x1012
(1~3
)X10
11
0.6
0.8
1.0
1.2
0
Di
E-E v
(eV)
Dit
was
ext
ract
ed b
y H
F-LF
met
hod
(3) a
lmos
t has
the
sam
e D
itas
the
cont
rol s
ampl
e, b
ut h
as h
ighe
r Dit
to th
e E C
edge
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
Surp
risin
gly
even
with
Al 2O
3IC
L, (1
) has
hig
her D
itth
an (3
)
![Page 15: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/15.jpg)
Pure
hig
her
Pure
hig
her--
kkdi
rect
on
GaA
sdi
rect
on
GaA
s
No
reas
onab
le C
-V
char
acte
ristic
obta
ined
!!!ch
arac
teris
tic o
btai
ned
!!!
Hig
her-k
Met
al E
lect
rode
GaA
s
Pos
sibl
e P
robl
ems:
Two
inte
rface
s sh
ows
good
qua
lity
resp
ectiv
ely,
Why
doe
sn’t
it w
ork
with
pur
e hi
gher
-kdi
rect
on
GaA
s? S
mal
l con
duct
ion
band
offs
et ?
?
Furth
erin
vest
igat
ion
need
ed!!!
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11
Furth
er in
vest
igat
ion
need
ed !!
!
![Page 16: ALD high-k and higher-k integration on GaAs · ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu , Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D](https://reader033.vdocuments.us/reader033/viewer/2022043009/5f9ae3ac376221448a6a1f5b/html5/thumbnails/16.jpg)
Sum
mar
ySu
mm
ary
Inve
rsio
n N
MO
SFET
is re
aliz
ed b
y in
tegr
atio
n of
ALD
Al 2O
3on
GaA
s(11
1)A
Hig
her-k
LaLu
O3
isfir
stde
mon
stra
ted
tobe
inte
grat
edon
GaA
sH
ighe
rkLa
LuO
3is
first
dem
onst
rate
dto
bein
tegr
ated
onG
aAs
---m
etal
/LaL
uO3
inte
rfac
e qu
ite st
able
---A
l 2O3/L
aLuO
3/GaA
s has
com
para
ble
inte
rfac
e as
Al 2O
3/GaA
s2
33
23
---A
l 2O3/L
aLuO
3/GaA
s int
erfa
ce m
ay in
trodu
ce a
dditi
onal
laye
r afte
r PD
A
Furth
er st
udy
on m
etal
/LaL
uO3/G
aAs i
s nee
ded
We
ackn
owle
dge
the
valu
able
dis
cuss
ions
and
on-
goin
g co
llabo
ratio
n w
ith
Prof
. R.M
. Wal
lace
’s g
roup
at U
T D
alla
s. Th
e w
ork
is p
artly
supp
orte
d by
NSF
, SR
C F
CR
P M
SD C
ente
r, an
d D
oD A
RO
.
Pete
r’s G
roup
, Sch
ool o
f EC
E Th
e 39
thIE
EE S
ISC
2008
.12.
11