aisg on-offkeying coax modem transceiver · 2014-10-25 · • general modem interfaces 1 please be...

XTAL

BufferOUTPUT

STAGE

Buffer

OOK

DEMOD

RES

XTAL1

TXIN

RXOUT

TXOUT

VL

GND

Buffer

OOK

MODPREAMP

FILTER

Control

Logic

COMP

2.176

FILTER

2.176

SYNCOUT

RXIN

DIR

DIRSET1

RECEIVER

THRESHOLD

14

15

2

7

6

5

4

16

11

3

12

9

113

8 10

BIASGND

Vcc

XTAL2

DIRSET2

SN65HVD62

www.ti.com SLLSE94B –SEPTEMBER 2011–REVISED JANUARY 2013

AISG On-Off Keying Coax Modem TransceiverCheck for Samples: SN65HVD62

1FEATURES DESCRIPTIONThese transceivers modulate and demodulate signals• Supply Ranging From 3V to 5.5Vbetween the logic (baseband) and a frequency

• Independent Logic Supply of 1.6V to 5.5V suitable for long coaxial media.• Wide Input Dynamic Range of –15dBm to

The HVD62 is an integrated AISG transceiver+5dBm for Receiverdesigned to be compliant with Antenna Interface

• Power Delivered by the Driver to the Coax can Standards Group v2.0 specification.be Adjusted From 0dBm to +6dBm

The HVD62 receiver integrates an active bandpass• AISG Compliant Output Emission Profile filter to enable demodulation of signals even in the• Low-power Standby Mode presence of spurious frequency components. The

filter has a 2.176 MHz center frequency.• Direction Control Output for RS-485 BusArbitration The transmitter supports adjustable output power

levels varying from +0dBm to +6dBm delivered to the• Supports up to 115 kbps Signaling50 Ω coax cable. The HVD62 transmitter is compliant• Integrated Active Bandpass Filter with Centerwith the spectrum emission requirement provided byFrequency at 2.176MHzthe AISG standard.

• 3mm × 3mm 16-Pin QFN PackageA direction control output is provided which facilitatesbus arbitration for an RS-485 interface. TheseAPPLICATIONSdevices integrate an oscillator input for a crystal, and

• AISG – Interface for Antenna Line Devices also accept standard clock inputs to the oscillator.• Tower Mounted Amplifiers (TMA)• General Modem Interfaces

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright © 2011–2013, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

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textExposed

Pad

DIR

DIRSET2

DIRSET1

GNDVCC

XTAL1

XTAL2

GND

TX

OU

T

RX

IN

BIA

S

RE

S

SY

NC

OU

T

TX

IN

VL

RX

OU

T

SN65HVD62

SLLSE94B –SEPTEMBER 2011–REVISED JANUARY 2013 www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

PIN CONFIGURATION

PIN FUNCTIONSHVD62 PIN

PIN DESCRIPTIONNAME

1 SYNCOUT Open drain output to synchronize other devices to the 4x-carrier oscillator at XTAL1,2. (8.704 MHz for HVD62)

2 TXIN Digital data bit stream to driver.

3 VL Logic supply voltage for the device.

4 RXOUT Digital data bit stream from receiver.

5 DIR DIR: Direction control output signal for bus arbitration.DIRSET1 and DIRSET2: Bits to set the duration of DIR6 DIRSET2DIRSET[2,1]:[L,L]=9.6kbps [L,H]=38.4kbps [H,L]=115kbps [H,H]=Standby Mode

7 DIRSET1

8 GND Ground

9 RES Input voltage to adjust driver output power. Set by external resistors from BIAS pin to GND.

10 BIAS Bias voltage output for setting driver output power by external resistors.

11 RXIN Modulated input signal to the receiver.

12 TXOUT Modulated output signal from the driver.

13 VCC Analog supply voltage for the device.

14 XTAL1 Crystal oscillator’s IO pins. Connect a 4 x fC crystal between these pins. Or connect XTAL1 to an 8.704 MHzclock and connect XTAL2 to GND.15 XTAL2

16 GND Ground

- EP Exposed pad. Recommended to be connected to ground plane for best thermal conduction.

Table 1. DRIVER FUNCTION TABLE (1)

TXIN [DIRSET1, DIRSET2] TXOUT COMMENT

H < 1 mVPP at 2.176 MHz Driver not active[L,L], [L,H] or [H,L]

L VOPP at 2.176 MHz Driver active

X [H,H] < 1 mVPP at 2.176 MHz Standby mode

(1) H = High, L = Low, X = Indeterminate

2 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated

Product Folder Links: SN65HVD62


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SN65HVD62


Table 2. RECEIVER and DIR FUNCTION TABLE (1)

RXIN RXOUT DIR COMMENT (see Figure 22)

IDLE mode (not transmitting or receiving)

< VIT at 2.176 MHz for longer than DIR H L No outgoing or incoming signaltimeout

RECEIVE mode (not already transmitting)

< VIT at 2.176 MHz for less than tDIR Timeout H H Incoming '1' bit, DIR stays HIGH for DIR Timeout

> VIT at 2.176 MHz for longer than tnoise filter L H Incoming '0' bit, DIR output is HIGH

TRANSMIT mode (not already receiving)

X H L Outgoing message, DIR stays LOW for DIR Timeout

(1) H = High, L = Low

ABSOLUTE MAXIMUM RATINGS (1)

VALUESUNITS

MIN MAX

Supply voltage, VCC and VL –0.5 6 V

Voltage range at coax pins –0.5 6 V

Voltage range at logic pins –0.3 VL + 0.3 V

Electrostatic Discharge, Human Body Model (EIA/JESD 22-A114) ±2 kV

Logic Output Current –20 20 mA

TXOUT output current Internally limited

SYNCOUT output current Internally limited

Junction Temperature, TJ 170 °C

Continuous total power dissipation See the Thermal Table

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratingsonly and functional operation of the device at these or any other conditions beyond those indicated under “recommended operatingconditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

THERMAL INFORMATIONSN65HVD62

THERMAL METRIC (1) QFN UNITS

(16) PINS

θJA Junction-to-ambient thermal resistance 49.4

θJCtop Junction-to-case (top) thermal resistance 64.2

θJB Junction-to-board thermal resistance 22.9°C/W

ψJT Junction-to-top characterization parameter 1.7

ψJB Junction-to-board characterization parameter 22.9

θJCbot Junction-to-case (bottom) thermal resistance 25.0

TSTG Storage temperature -65 to 150 °C

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

Copyright © 2011–2013, Texas Instruments Incorporated Submit Documentation Feedback 3



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SN65HVD62


RECOMMENDED OPERATING CONDITIONSMIN NOM MAX UNIT

VCC Analog supply voltage 3 5.5 V

VL Logic supply voltage 1.6 5.5 V

VI(pp) Input signal amplitude at RXIN 1.12 Vpp

TXIN, DIRSET1, DIRSET2 70%VL VLVIH High-level input voltage V

XTAL1, XTAL2 70%VCC VCC

TXIN, DIRSET1, DIRSET2 0 30%VLVIL Low-level input voltage V

XTAL1, XTAL2 0 30%VCC

1/tUI Data signaling rate 9.6 115 kbps

FOSC Oscillator frequency HVD62 –30 ppm 8.704 30 ppm MHz

TA Operating free-air temperature –40 85 °C

TJ Junction Temperature –40 125 °C

Load impedance between TXOUT to RXIN 50RLOAD Ω

Load impedance between RXIN and GND at fC (channel) 50

R1 Bias resistor between BIAS and RES 4.1 kΩR2 Bias resistor between RES and GND 10 kΩRSYNC Pull-up resistor between SYNCOUT and VCC 1 kΩVRES Voltage at RES pin 0.7 1.5 V

CC Coupling capacitance between RXIN and Coax (channel) 220 nF

CBIAS Capacitance between BIAS and GND 1 µF




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SN65HVD62


ELECTRICAL CHARACTERISTICSover recommended operating conditions (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

POWER SUPPLY

100 TXIN = L (Active) 28 33

101 TXIN = H (Quiescent) DIRSET1 = L 25 31DIRSET2 = HICC Supply current (VCC) mATXIN = 115 kbps,

102 27 3350% duty cycle

99 (Standby) DIRSET1 = DIRSET2=H 12 17

103 IL Logic supply current TXIN = H, RXIN = DC input 50 µA

ΔVRXIN/104 Receiver power supply rejection ratio VTXIN = VL 45 60 dBΔVCC

LOGIC PINS

High-level logic output voltage IOH = –4 mA for VL > 2.4V,112 VOH 90%VL V(RXOUT, DIR) IOH = –2 mA for VL < 2.4V

Low-level logic output voltage IOL = 4 mA for VL > 2.4V,113 VOL 10%VL V(RXOUT, DIR) IOL = 2 mA for VL < 2.4V

114 IIH/IIL Logic input current (DIRSET1/2) -1 10 µA

IIH/IIL Logic input current (TXIN) -2 1 µA

COAX DRIVER

130 VRES = 1.5 V (Maximum setting) 2.24 2.5Peak-to-peak output voltage at device pinVOPP VPPTXOUT (See Figure 1)132 VRES = 0.7 V (Minimum setting) 1.17 1.3

130A VRES = 1.5 V 5 6Peak-to-peak voltage at coax out (SeeVOPP dBmFigure 1)132A VRES = 0.7 V -0.6 0.3

134 At TXOUT 1 mVppVOZ Off-state output voltage

134A At coax out -60 dBm

Coupled to coaxial cable with characteristic Conforms to AISGimpedance 50 Ohms, as shown in Figure 1. With a spectrum emissions mask,136 Output emissions recommended 470 pF capacitor between RXIN 3GPP TS 25.461, seeand GND. Measurements above 150 MHz are Figure 3determined by setup.

41 fo Output frequency (HVD62) 2.176 MHz

142 ∆f Output frequency variation –100 100 ppm

143 At 100 kHz 0.03 ΩZo Output impedance

144 At 10 MHz 3.5 Ω

TXOUT is also protected by a thermal shutdown145 | IOS | Short-circuit output current 300 450 mAcircuit during short-circuit faults

COAX RECEIVER

152 79 112 158 mVPPVIT Input threshold fIN = 2.176 MHz

152A –18 –15 –12 dBm

154 ZIN Input impedance f = fO 11 21 kΩ

RECEIVER FILTER

160 fPB Passband VRXIN = 1.12VP_P 1.1 4.17 MHz

2.176MHz carrier amplitude of 112.4 mVPP,161 fREJ Receiver rejection range Frequency band of spurious components with 800 1.1 4.17 MHz

mVPP allowed.

162 Receiver noise filter time (slow bit rate) DIRSET for 9.6kbps 4tnoise filter µs

163 Receiver noise filter time (fast bit rate) DIRSET for > 9.6 kbps 2

XTAL AND SYNC

171 II Input leakage current XTAL1, XTAL2, 0V < VIN < VCC –15 15 µA

SYNCOUT, with 1 kΩ resistor from SYNCOUT to172 VOL Output low voltage 0.4 VVCC




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SN65HVD62


SWITCHING CHARACTERISTICSover recommended operating conditions (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

201 tpAQ, tpQA Coax driver propagation delay See Figure 1 5 µs

Coax receiver output rise/fall202 tr, tf CL = 15 pF, RL = 1 kΩ, See Figure 1 20 nstime

203 tPHL, tPLH Receiver propagation delay See Figure 2 5.5 11 µs

VRXIN(ON) = 630 mVpp, VRXIN(OFF) < 5204 Duty Cycle Coax receiver output duty cycle 40% 60%mVpp, 50% duty cycle

VRXIN(ON) = 200 mVpp, VRXIN(OFF) < 5214 40% 60%mVpp, 50% duty cycle

206 DIRSET2 = DIRSET1 = GND or OPEN 1667

207 tDIR Direction control active duration DIRSET2 = GND, DIRSET1 = VL 417 µs

208 DIRSET2 = VL, DIRSET1 = VL 137

Direction control skew209 tDIR Skew 270 ns(DIR to RXOUT)

210 tDIS Standby disable delay 2300 mVPP at 2.176 MHz on RXIN ms

211 tEN Standby enable delay 2




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Driver Amplitude

Adjust

TXIN

Coax

Out

2.176 MHz

Crystal

Signal

generator

Cc

TXOUT

RXIN

RES

XTAL2

XTAL2

RAMP

50

W

50

W

VL

0.5 VL

Vpk

0.5 Vpk

tpAQtpQA

TXIN

TXOUT

SN65HVD62


PARAMETER MEASUREMENT INFORMATION

Signal generator rate is 115 kbps, 50% duty cycle, rise and fall times less than 6 nsec, nominal output levels 0Vand 3V. Coupling capacitor Cc is 220 nF.

Figure 1. Measurement of Modem Driver Output Voltage With 50 Ω Loads




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Received

Data Out

Coax

In

DirectionControl

2.176 MHz

Signal

50

Cc

TXOUT

RXIN

RXIN

RXOUT

DIR

0.5 VL

Vpk

VL

0.5 VL

tPHL tPLH

VL

0.5 VL

tDIRSKEW

SN65HVD62


PARAMETER MEASUREMENT INFORMATION (continued)

Figure 2. Measurement of Modem Receiver Propagation Delays




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0 10M 20M 30M

±80

±70

±60

±50

±40

±30

±20

±10

0

10

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

FREQUENCY (Hz) C00

50% Duty Cycle CF = 470pF

AISG Mask

30M 130M 230M 330M

±120

±110

±100

±90

±80

±70

±60

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

FREQUENCY (Hz) C00

AISG Mask


1, -36

1.676, -25

1.976, -5

2.076, 5 2.276, 5

2.376, -5

2.676, -25

10, -3620, -36

30, -67-70

-60

-50

-40

-30

-20

-10

0

10

0.1 1 10 100

Em

issi

on

s (d

Bm

) w

ith O

OK

an

d V

RE

S=1

.5V

Frequency (MHz)

Emissions spectrum with 50% duty cycle OOK and VRES=1.5Vconforms to TS 25.461

SN65HVD62


Figure 3. AISG Emissions Template

TYPICAL CHARACTERISTICS

Figure 4. Low Frequency Emissions Spectrum with 9.6 kbps Figure 5. High Frequency Emissions Spectrum with 9.6Signaling Rate kbps Signaling Rate




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0 10M 20M 30M

±80

±70

±60

±50

±40

±30

±20

±10

0

10

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

FREQUENCY (Hz) C00

50% Duty cycle cF = 470 pF

AISG Mask

30M 130M 230M 330M

±120

±110

±100

±90

±80

±70

±60

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

FREQUENCY (Hz) C00

AISG Mask


0 10M 20M 30M

±80

±70

±60

±50

±40

±30

±20

±10

0

10

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

FREQUENCY (Hz) C00

50% Duty Cycle cF = 470 pF

AISG Mask

30M 130M 230M 330M

±120

±110

±100

±90

±80

±70

±60

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

FREQUENCY (Hz) C00

AISG Mask


SN65HVD62


TYPICAL CHARACTERISTICS (continued)

Figure 6. Low Frequency Emissions Spectrum with 38.4 Figure 7. High Frequency Emissions Spectrum with 38.4kbps Signaling Rate kbps Signaling Rate

Figure 8. Low Frequency Emissions Spectrum with 115.2 Figure 9. High Frequency Emissions Spectrum with 115.2kbps Signaling Rate kbps Signaling Rate




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24

24.5

25

25.5

26

26.5

27

3 3.5 4 4.5 5 5.5

QU

IES

CE

NT

CU

RR

EN

T (

mA

)

SUPPLY VOLTAGE (V) C00

TXIN = VL

12

12.1

12.2

12.3

12.4

12.5

12.6

12.7

12.8

12.9

13

3 3.5 4 4.5 5 5.5

QU

IES

CE

NT

CU

RR

EN

T (

mA

)


TXIN = VL

0.1M 1M 10M

0

5

10

15

20

25

30

35

40

TR

AN

SM

ITT

ER

OU

TP

UT

IMP

ED

AN

CE

(

)

FREQUENCY (Hz) C00

0.7 0.9 1.1 1.3 1.5

±2

±1

0

1

2

3

4

5

6

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

VRES (V) C00

SN65HVD62



Figure 10. Transmitter Output Impedance Figure 11. Transmit Power Adjustment

Figure 12. Supply Current versus Supply Voltage while Figure 13. Supply Current versus Supply Voltage inTransmitting Standby Mode




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0

1

2

3

4

5

6

7

-40 -10 20 50 80 110

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)

TEMPERATURE (OC) C00

5M

0

5k

10k

15k

20k

25k

30k

100 1k 10k 100k 1M

RE

CE

IVE

R IN

PU

T IM

PE

DA

NC

E (

)

FREQUENCY (Hz) C00

0

1

2

3

4

5

6

7

3 3.5 4 4.5 5 5.5

TR

AN

SM

ITT

ER

OU

TP

UT

(dB

m)


12.4

12.5

12.6

12.7

12.8

12.9

13

13.1

13.2

-40 -10 20 50 80 110

QU

IES

CE

NT

CU

RR

EN

T (

mA

)


SN65HVD62



Figure 14. Supply Current versus Temperature in Standby Figure 15. Transmitter Output Power versus Supply VoltageMode

Figure 16. Transmitter Output Power versus Temperature Figure 17. Receiver Input Impedance versus Frequency




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40

44

48

52

56

60

-10 -7 -4 -1 2 5

RE

CE

IVE

R O

UT

PU

T D

UT

YC

YC

LE (

%)

RECEIVER INPUT (dBm) C00

0

10

20

30

40

50

60

-10 -7 -4 -1 2 5

RE

CE

IVE

R O

UT

PU

T D

UT

YC

YC

LE (

%)

RECEIVER INPUT (dBm) C00

0.08

0.09

0.1

0.11

0.12

0.13

0.14

0.15

0.16

-40 -10 20 50 80 110

RE

CE

IVE

R II

NP

UT

TH

RE

SH

OL

D (

V)


RXOUT=STABLE HIGH

RTXOUT=STABLE LOW

340

345

350

355

360

-40 -10 20 50 80 110

DIR

RE

CE

IVE

R O

UT

PU

T D

ELA

Y (

nS)


SN65HVD62



Figure 18. Receiver Input Threshold versus Temperature Figure 19. DIR Output Delay versus Temperature

Figure 20. Receiver Duty Cycle with 9.6 kbps Signaling Rate Figure 21. Receiver Duty Cycle with 115.2 kbps SignalingRate




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Coax In

Data Out

Direction

SN65HVD62


APPLICATION INFORMATION

Driver Amplitude Adjust

The SN65HVD62 can provide up to 2.5 V peak-to-peak of output signal at the TXOUT pin to compensate forpotential loss within the external filter, cable, connections, and termination. External resistors are used to set theamplitude of the modulated driver output signal. Resistors connected across RES and BIAS set the outputamplitude. The maximum peak-to-peak voltage at TXOUT is 2.5 V, corresponding to +6 dBm on the coaxialcable. The TXOUT voltage level can be adjusted by choice of resistors to set the voltage at the RES pin.according to the following equation:

VTXOUT (VP-P) = (2.5 VP-P x VRES (V))/1.5 V VRES (V) = 1.5 V x R2/(R1 + R2) VTXOUT (VP-P) = 2.5 VP-P x R2/(R1 + R2). (1)

The voltage at the RES pin should be between 0.7 V and 1.5 V. Connect RES directly to the BIAS (R1 = 0 Ω) formaximum output level of 2.5 V peak-to-peak. This gives a minimum voltage level at TXOUT of 1.2 V peak-to-peak, corresponding to about 0 dBm at the coaxial cable. A 1 μF capacitor should be connected between theBIAS pin and GND. To obtain a nominal power level of +3 dBm at the feeder cable as the AISG standardrequires, use R1 = 4.1k Ω and R2 = 10k Ω that provide 1.78 VP-P at TXOUT.

Direction Control

In many applications the mast-top modem which receives data from the base will then distribute the receiveddata through an RS-485 network to several mast-top devices. When the mast-top modem receives the first logic0 bit (active modulated signal) it will take control of the mast-top RS-485 network by asserting the DirectionControl signal. The duration of the Direction Control assertion should be optimized to pass a complete messageof length B bits at the known signaling rate (1/tBIT) before relinquishing control of the mast-top RS-485 network.For example, if the messages are 10 bits in length (B=10) and the signaling rate is 9600 bits per second (tBIT =0.104 msec) then a positive pulse of duration 1.7 msec is sufficient (with margin to allow for network propagationdelays) to enable the mast-top RS-485 drivers to distribute each received message.

DIRECTION Control Time Constant

The time constant for the Direction Control function can be set by the Control Mode pins, DIRSET1/DIRSET2.These pins should be set to correspond to the desired data rate. With no external connections to the ControlMode pins, the internal time constant is set to the maximum value, corresponding to the minimum data rate.

Conversion Between dBm and Peak-to-peak VoltagedBm = 20 × LOG10 [Volts-pp / SQRT(0.008 × Zo)] = 20 × LOG10 [Volts-pp / 0.63] for Zo = 50 Ω (2)Volts-pp = SQRT(0.008 × Zo) × 10(dBm/20) = 0.63 × 10(dBm/20) for Zo = 50 Ω (3)

The following table shows conversions between dBm and peak-to-peak voltage with 50 Ω load, for various levelsof interest including reference levels from the 3GPP TS 25.461 Technical Specification.

SIGNAL ON COAX (Iuant Layer 1) dBm Vpp (V)

Maximum Driver ON Signal 5 1.12

Nominal Driver ON Signal 3 0.89

Minimum Driver ON Signal 1 0.71

AISG Maximum Receiver Threshold –12 0.16

Nominal Receiver Threshold –15 0.11

Minimum Receiver Threshold –18 0.08

Maximum Driver OFF Signal –40 0.006




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IDLERXOUT = HTXOUT=Idle

DIR = L

Transmit 0

TXOUT=Active DIR = L

Receive 0

RXOUT = LDIR = H

Receive 1

RXOUT = HDIR = H

TXIN ;TXIN 9

RXIN 9

DIR Timeout

RXIN ;

Transmit 1

TXOUT=Idle DIR = L

TXIN ;

DIR Timeout

RXIN 9

SN65HVD62


States of Operation

If DIRSET1 and DIRSET2 are in a logic High state, the device will be in STANDBY mode. While in STANDBYmode, the Receiver functions normally, detecting carrier frequency activity on the RXIN pin and setting theRXOUT state as discussed below. But the Transmitter circuits are not active in STANDBY, thus the TXOUT pinis idle regardless of the logic state of TXIN. The supply current in STANDBY mode is significantly reduced,allowing power savings when the node is not transmitting.When not in STANDBY mode, the default power-on state is IDLE. When in IDLE mode, RXOUT is High, andTXOUT is quiet. The device transitions to RECEIVE mode when a valid modulated signal is detected on theRXIN line <OR> the device transitions to TRANSMIT mode when TXIN goes Low. The device stays in eitherRECEIVE or TRANSMIT mode until DIR Timeout (nominal 16 bit times) after the last activity on RXOUT or TXIN.

When in RECEIVE mode:• RXOUT responds to all valid modulated signals on RXIN, whether from the local transmitter, a remote

transmitter, or long noise burst.• TXOUT responds to TXIN, generating 2.176 MHz signals on TXOUT when TXIN is Low, and TXOUT is quiet

when TXIN is High. (In normal operation, TXIN is expected to remain High when the device is in RECEIVEmode).

• The device stays in RECEIVE mode until 16 bit times after the last rising edge on RXOUT, caused by validmodulated signal on the RXIN line.

When in TRANSMIT mode:• RXOUT stays High, regardless of the input signal on RXIN.• TXOUT responds to TXIN, generating 2.176 MHz signals on TXOUT when TXIN is Low, and TXOUT is quiet

when TXIN is High.• The device stays in TRANSMIT mode until 16 bit times after TXIN goes High.

Figure 22. State Transition Diagram




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SN65HVD62


REVISION HISTORY

Changes from Original (September 2011) to Revision A Page

• Changed Pin 4 label (lower right) in the PIN CONFIGURATION diagram from TXIN to RXOUT ........................................ 2

• Changed the PIN FUNCTIONS table by merging the DESCRIPTION cells for pins 5, 6, and 7 and deleted the wordDIRSET from the beginning of the second line in that description field. .............................................................................. 2

• Added 3 FUNCTIONAL TABLES (DRIVER, RECEIVER, AND DIR) under the PIN FUNCTIONS ...................................... 2

• Added rows 162 and 163 to the ELEC CHARACTERISTICS table, under RECEIVER FILTER section ............................ 5

• Added rows 210 and 211 to the SWITCH CHARACTERISTICS table ................................................................................ 6

• Added Figure 22 State Transition Diagram ........................................................................................................................ 15

Changes from Revision A (January 2012) to Revision B Page

• Changed Feature From: "Power Delivered by the Driver to the Coax can be Adjusted +3dBm to +6dBm" To: "PowerDelivered by the Driver to the Coax can be Adjusted 0dBm to +6dBm" .............................................................................. 1

• Added Storage temperature to the Thermal Table ............................................................................................................... 3

• Change the MIN value of VRES in the ROC table From: 0.84 To: 0.7 V ............................................................................... 4

• Change the TYP value of CC in the ROC table From: 270 To: 220 nF ................................................................................ 4

• Changed the ELECTRICAL CHARACTERISTICS ............................................................................................................... 5

• Changed the SWITCHING CHARACTERISTICS ................................................................................................................. 6

• Changed the PARAMETER MEASUREMENT INFORMATION ........................................................................................... 7

• Added the TYPICAL CHARACTERISTICS section .............................................................................................................. 9

• Changed the APPLICATION INFORMATION section ........................................................................................................ 14




http://www.ti.com



PACKAGE OPTION ADDENDUM

www.ti.com 11-Apr-2013

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish MSL Peak Temp(3)

Op Temp (°C) Top-Side Markings(4)

Samples

SN65HVD62RGTR ACTIVE QFN RGT 16 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 85 HVD62

SN65HVD62RGTT ACTIVE QFN RGT 16 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 85 HVD62

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is acontinuation of the previous line and the two combined represent the entire Top-Side Marking for that device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

http://www.ti.com/product/SN65HVD62?CMP=conv-poasamples#samplebuy

http://www.ti.com/product/SN65HVD62?CMP=conv-poasamples#samplebuy

http://www.ti.com/productcontent

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

SN65HVD62RGTR QFN RGT 16 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2

SN65HVD62RGTT QFN RGT 16 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2

PACKAGE MATERIALS INFORMATION

www.ti.com 8-Feb-2013

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

SN65HVD62RGTR QFN RGT 16 3000 367.0 367.0 35.0

SN65HVD62RGTT QFN RGT 16 250 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 8-Feb-2013

Pack Materials-Page 2

http://www.ti.com/lit/slua271

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherchanges to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latestissue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current andcomplete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of salesupplied at the time of order acknowledgment.

TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s termsand conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessaryto support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarilyperformed.

TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provideadequate design and operating safeguards.

TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI components or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.

Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alterationand is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altereddocumentation. Information of third parties may be subject to additional restrictions.

Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or servicevoids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.

Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirementsconcerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or supportthat may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards whichanticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might causeharm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the useof any TI components in safety-critical applications.

In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is tohelp enable customers to design and create their own end-product solutions that meet applicable functional safety standards andrequirements. Nonetheless, such components are subject to these terms.

No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the partieshave executed a special agreement specifically governing such use.

Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use inmilitary/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI componentswhich have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal andregulatory requirements in connection with such use.

TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use ofnon-designated products, TI will not be responsible for any failure to meet ISO/TS16949.

Products Applications

Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive

Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications

Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers

DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps

DSP dsp.ti.com Energy and Lighting www.ti.com/energy

Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial

Interface interface.ti.com Medical www.ti.com/medical

Logic logic.ti.com Security www.ti.com/security

Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense

Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video

RFID www.ti-rfid.com

OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com

Wireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright © 2013, Texas Instruments Incorporated

http://www.ti.com/audio

http://www.ti.com/automotive

http://amplifier.ti.com

http://www.ti.com/communications

http://dataconverter.ti.com

http://www.ti.com/computers

http://www.dlp.com

http://www.ti.com/consumer-apps

http://dsp.ti.com

http://www.ti.com/energy

http://www.ti.com/clocks

http://www.ti.com/industrial

http://interface.ti.com

http://www.ti.com/medical

http://logic.ti.com

http://www.ti.com/security

http://power.ti.com

http://www.ti.com/space-avionics-defense

http://microcontroller.ti.com

http://www.ti.com/video

http://www.ti-rfid.com

http://www.ti.com/omap

http://e2e.ti.com

http://www.ti.com/wirelessconnectivity

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