aida wp8.4 qualification of components (electronics)
DESCRIPTION
AIDA WP8.4 Qualification of components (Electronics) . Mauro Citterio on behalf of INFN Milano. INDEX. Literature/Standard Survey …. Some results Irradiation requirements Peculiarity of High Energy Physics (HEP) environment Test case presented: Electronics for the ATLAS Calorimete r - PowerPoint PPT PresentationTRANSCRIPT
14/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
AIDA WP8.4 Qualification of components
(Electronics)
Mauro Citterioon behalf of INFN Milano
24/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
INDEX• Literature/Standard Survey …. Some results
• Irradiation requirements• Peculiarity of High Energy Physics (HEP) environment
• Test case presented: Electronics for the ATLAS Calorimeter
• Test plan …. In the following months
• Some on-going measurements• In collaboration with LHC experiments
• In collaboration with other INFN programs• Power MOSFETs under irradiation
• exposed to ionizing radiation (gamma 60Co)
• exposed to heavy ions (75Br at 155 MeV) and protons (216 MeV)
• Conclusions
Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
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• Existing data on “rad-tolerant” electronics components from LHC show a “non–uniform” set of results• Very different “environment” where components needs to operate
• Literature dominated by “non-HEP” Standard• Sources: IEEE NSREC Data Workshop and Proceedings, RADECS Data
Workshop and Proceedings, ESA Contract Reports, ESA Radiation Design Handbook. PSS 609, IEEE Publications
• Total Ionizing Dose Standards: SCC 22900 (ESA SCC), Mil Std 883E Method 1019.6 (DESC), ASTM F1892 (includes ELDRS)
• Single Event Standards: SCC 29500 (ESA SCC), EIA/JEDEC Standard EIA/JESD57, ASTM F1192
• However some guidelines can be extracted, at least to compare with similar studies already made
Literature/Standard Survey
Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
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Dose-rates for testing.- High Dose Rate:
SCC 22900 Window 1. 1-10 rads/sec.MIL883E 1019.6. 50-300 rads/sec.
- Low Dose Rate:SCC 22900 Window 2. 0.01-0.1 rads/sec.MIL883E 1019.6. 0.01 rads/sec.Elevated Temp. 0.5-5 rads/sec.
Sample Size/Traceability
Sample Size: Total Ionizing Dose. Minimum 5 samples. 4 test, 1 reference. Single Event. 3 samples recommended.
Traceability Use single Lot Date Code for test to avoid “Safety Factors”
Useful inputs from survey
Test conditions
It is easy to do, but it is rarely done
Typical condition
Not Common in our field,Should be considered …. It could be the “real worst case”
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Test conditions
Limited Comparison
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Component database: must contain “proper” information on the testing procedurePredict radiation spectra/doses for the experimental “region” where tested components will operate, before doing the test.
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ATLAS Liquid Argon Electronics:The major background is due to neutrons and gammas.On the right is a simulated spectrum of particles.
How the space environment looks like (at least for neutron)?
Case Study:
84/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
Space environment is similar at least for the neutron spectra up to 100 MeV (after a scale factor ).
We need to find irradiation facilities with similar spectra.
Case Study for neutron:Courtesy of Helio Takai (BNL)
94/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
Some facilities exist and data are available from literature
They are the best choice to irradiate components
AIDA facilities should be “included” in a similar plot
This test case should be repeated for various environment !!! … on going activity
Case Study for neutron:IEEE paper, Author: Charles Slayman
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Moreover the energy of the beam has an effect on the degradation
We need not only to have a metric to compare against but we need also to “evaluate” rad tolerance of new technology
More “HEP typical” test cases are under study
Case Study for proton:Courtesy of Helio Takai (BNL)
114/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
The research program will be focused on the characterization against radiation (ionizing and not) of electronics components and circuits commonly used in high energy physics experiments.
• Some class of devices to be tested are
• ADCs, MUX, Clock generator, PLLs, • Field Programmable Gate Arrays (FPGA), • Power Mosfets, GaN Mosfets• DC-DC converter and Point of Loads (POLs)
• The devices to be tested will be both commercial and custom made devices.
• The latest are mostly component developed by CERN or CERN's collaborator in various technologies, such as silicon CMOS (130 and 65 nm), Silicon Germanium (SiGe 250 and 130 nm) and Silicon on Saffire (250 and 180 nm).
Test Plan
Beam lineDevice
under testBeam lineDevice
under test
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Displacement damage tests will be performed with both proton an neutron beams:
• TSL facilities (Uppsala) PAULA and ANITA are the current baseline• UCL at Louvain-la-Neuve, LIF beam line is under consideration
Test will be performed on packaged and bare die devices (if available)
• Max beam energy at extraction is relevant for commercial devices
INFN Milano will be willing to share beam time with other member of the collaboration for testing other type of devices.
List of the parameter to be tested is very long and need to be shortened, optimized and documented
• Digital and analogue electronics have different set of parameters to be monitored
Test Plan
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On going measurements
INFN Milano is participating to test on going in the ATLAS collaboration
Various ADCs are tested for TID and DD.
The data will be inserted in the AIDA Database
Still very difficult to get a “standard” report of the tests.
Courtesy of Huchen Cheng (BNL)
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On going measurements
Power Mosfets exposed to gamma rays (INFN APOLLO
experiment)
Devices under test:
30V STP80NF03L-04
30V LR7843
200V IRF630
Used doses:
I 1600 Gray
II 3200 Gray
III 5890 Gray
IV 9600 Gray
Measurements :
Breakdown Voltage @ VGS=-10V
Threshold Voltage @ VDS=5V
ON Characteristic @ VGS=10V
Gate Leakage @ VDS=10V
For each type of device 20 samples were tested, 5 for each dose value
(tested at the ENEA Calliope Test Facility)
154/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
On going measurements
200 V Mosfet: IRF630 (courtesy of APOLLO Experiment)
Large parameters variation from device to device. How to document these results in a database?
164/10/2013 Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4
Power mosfet exposed to protonsThe results are still preliminary. Only the 200V Mosfets (IRF 630, samples from two different manufacturers) were exposed. Test done by measuring SEBs.
Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston)Ionizing Dose: < 30 Krads
An “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown.
10-12
10-11
10-10
10-9
10-8
10-7
182 184 186 188 190 192 194 196
IRF630 - ST
Cro
ss S
ectio
n [c
m-2
]
VDS [Volt]
10-12
10-11
10-10
10-9
10-8
10-7
175 180 185 190 190 195
IRF630 - International Rectifier
Cro
ss S
ectio
n [c
m-2
]
VDS [Volt]
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Power Mosfets …
The number of SEB events recorded at each VDS was small less then 30 events for the ST less than 150 events for the IR devices Large statistical errors affect the measurements
The cross section at VDS = 150 V (“de-rated” operating voltage) can not be properly estimated Dependence from manufacturer “Knee” not well defined
• To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2, which puts the failure rate at <1 for 10 years of operation
• Proton irradiation campaigns with increased fluences and more samples are planned.
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Conclusion
The survey of the existing data has given some input for the information that have to be gathered for the DATABASE
The irradiation facilities need to be chosen accordingly to the radiation spectra expected in the HEP experiments
Test on “typical” devices of interest in future HEP experiments (both in collaboration with other Institution and directly by INFN) are ongoing.
More and more results will be available in the coming months The database will in any case a limited number of components It is reasonable to imagine that the database will grow even after AIDA
lifetime.