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Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 Department of Electrical Engineering, and Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China 2016-6-28 1

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Page 1: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

Aging Gate Delay Model at Logic Circuit under NBTI Effect

郭海霞

Department of Electrical Engineering, and Shanghai Key

Laboratory of Multidimensional Information Processing,East China Normal University, Shanghai, China

2016-6-28 1

Page 2: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

1 Introduction

2 Aging Gate Delay Model

3 Validation and Discussion

contents

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IntroductionTheNBTIeffectdrivingthedeclineincurrentandtransconductance,subthresholdslopeincreasingandthresholdvoltageshi<,willincreasepropaga>ondelayofcombina>onalcircuits.UnderNBTIeffect,thethresholdvoltageofthePMOStransistorincreasesandcausesthedegrada>onoflogicgatesandeventuallyleadstothe>mingviola>ons.

reac>on-diffusion(R-D)theoryReac>on:Si–HorSi–Obondsatthesubstrate/gateoxideinterfacearebrokenDiffusion:reac>on-generatedspeciesdiffuseawayfromtheinterfacetowardthegatetrapping/detrapping(T/D)theoryTrapping:inelectricfield,chargeintheSiO2interfaceiscapturedbythedefectsintheoxideDetapping:removingelectricfield,thechargetrappingbreakawayfromoxida>onlayer. 3

Page 4: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

NBTI timing analysis framework

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The long-term prediction model

ΔVthforperiodicalinputpaVern

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n:>meexponent(1/6forH2diffusion)C:temperaturedependencefactorEa:ac>va>onenergyofhydrogenspeciesk:BoltzmannconstantEox:ver>calelectricalfieldTo,K1,Eo:temperatureandprocessdependentconstantsTclk:>meperiodofonestress-recoverycycleα:dutycycleisthera>oofthe>mespentinstressto>meperiodβe:thefrac>onparameteroftherecovery

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Obtain experimental data

Alltransistorsuse45-nm PTM model.pmos:180nm/45nmnmos:90nm/45nmVDD:1.1VTA:8nsTB:4nsα:0.5

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NAND

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CL(loadcapacitor):0fF~2fFti(inputslewrate):10ps~110pstp(gatedelay):3ps~53ps

NAND Gate Delay Model without Degradation

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(a)Themodeloftpwithoutdegrada>onandthesimulatedresults(b)theresidualsoftpbetweenmodelandthesimula>ons

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CL(loadcapacitor):0fF~2fFti(inputslewrate):10ps~110pstp(gatedelay):3ps~53ps

(a)Themodeloftowithoutdegrada>onandthesimulatedresults(b)theresidualsoftobetweenmodelandthesimula>ons

NAND Gate Delay Model without Degradation

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NAND Gate Delay Model without Degradation

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Page 10: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

tp,fresh(CL,ti)tp,aging(ΔVth,ti)tp,aging(ΔVth,CL)

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NAND Gate Delay Model with Degradation

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Aging Gate Delay Model

to,fresh(CL,ti)to,aging(ΔVth,ti)to,aging(ΔVth,CL)

Detailsoftheprocess

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Page 12: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

NANDGateDelayModelwithDegrada>on

tp,fresh(CL,ti)tp,aging(ΔVth,ti)tp,aging(ΔVth,CL)

to,fresh(CL,ti)to,aging(ΔVth,ti)to,aging(ΔVth,CL)

Aging Gate Delay Model

1,keeppingcommonitem2,addingcorrec>onitemforeveryfactor3,runninggenetic algorithm ofRandom7000setsofdatatogetcoefficients

2,Fijng

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tp,aging(CL,ti,ΔVth)

to,aging(CL,ti,ΔVth)

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Thedistribu>onoferrorbetweensimula>onandcalcula>onoftp,aging

Aging Gate Delay Model

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Freshpropaga>ondelay:Agedpropaga>ondelay:

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Pathdelaycalcula>onframework

Page 16: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

Validation and Discussion

circuitnetlistofC17inISCAS85andthepath

The inputpaVerns:Inputslew rate is 20ps.Inputduty-cycleof{I1,I2,I3,I6,I7}are{0.5,0.5,0.5,0.5,0.33}.Periodof{I1,I2,I3,I6,I7}are{8ns,4ns,4ns,8ns,3ns}.Thegatedegrada>onΔVthis0.05V

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Page 17: Aging Gate Delay Model at Logic Circuit under NBTI Effect · Aging Gate Delay Model at Logic Circuit under NBTI Effect 郭海霞 ... increases and causes the degradaon of logic gates

Summary

1Analyzed the time delay under the effect of NBTI in combinational logic circuit.

2Using the curve fitting toolbox and the genetic algorithm to explore the propagation delay model with the NBTI considered.

3This method will also be extended to other logic gates.

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Thecalcula>onsofthedelaymodelwithoutandwithdegrada>onforC17benchmarkcircuit.

The histogram represents the path delay .Thelines represent the relative errors between the calculation and simulation.

Validation and Discussion

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Question Time

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Thanks!

2016-6-28

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