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Page 1: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Adrian M IonescuAdrian M. Ionescu

Page 2: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

•• Introduction:Introduction:•• Introduction:Introduction:– the IT Platform of Today: at the edge of the cloud

•• Guardian Guardian AngelsAngels for a for a SmarterSmarter life:life:– concept: enabled by Zero‐Power– the next electronic switch– role of heterogenous integration:g g

• Novel architectures and materials (silicon, carbon, III‐V)– bridging reaserch and communitiesbridging reaserch and communities– enablig a revolution in academic curricula

•• ConclusionConclusion•• ConclusionConclusion2A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 3: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Guardian Angels

1853 1913 1969 2025 2061 2081

RapidAdoption

Textile Auto Computer Distributedintelligence

NanotechRailway

1771 1825 1886 1939 1997 2007

1800 1853 1913 1969 2005 2025

1771 1825 1886 1939 1997 2007

Industrial Revolution Information Revolution

3A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 4: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

1 Today:Mobiles at the Edge of the Cloud1. Today: Mobiles at the Edge of the Cloud

2. Today: The unfulfilled promise of Wireless Sensor Nets

4A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Source: Jan Rabaey 2008.

Page 5: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Challenges: The GatewayChallenges:• economy of scale• interoperability

The Gateway

p y• energy• reliability The Swarm• cost & easy to use

Interconnected smart objects enabled by energyobjects enabled by energyefficient nanotechology : the Guardian Angels.

5A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

gThe Cloud

Page 6: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Guardian Angels are future zerozero‐‐power smart autonomous systemspower smart autonomous systemsGuardian Angels are future zerozero‐‐power smart autonomous systems power smart autonomous systems featuring sensing, computation and communication beyond human aptitudes. They can harvest different kinds of energy.

66A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 7: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

oo ZeroZero‐‐power is the system ability to harvest energypower is the system ability to harvest energy existing in dynamicoo ZeroZero power is the system ability to harvest energy power is the system ability to harvest energy existing in dynamic environments (solar, thermal, vibration, electromagnetic) and power‐up the smart GA systems.

oo GA’s are smart personal companionsGA’s are smart personal companions‐ They will actively assist humans from infancy to old age in any life situation.Th t t i htf d d i t i‐ They are autonomous, straightforward and non‐intrusive.

‐ They are smart, controllable, secured and personalized.

7A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 8: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Energy limits driveEnergy limits drivethe zero power technology platform

3 generations of Guardian Angels

l d l

Zero-power system

Multi‐modal:emotions, stressIntercommu‐

nication,ScavengersNon‐

designScavengersNon

invasive & invasive

EnergyEnergyefficient

technologies

harvesting, storage &

green batteries

8A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 9: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

ff d bl• Heterogeneous integration at affordable cost• Drivers: power power consumptionconsumption and novelnovel functionalityfunctionality

Guardian Angels zero power platform

9A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 10: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

P hi ti i i• Power per chip continues increasing.• Leakage power dominates in advanced technology nodes.• VT scaling saturated by 60mV/dec physical limitVT scaling saturated by 60mV/dec physical limit.• Voltage scaling slowed: 45nm=1V, 22nm=0.8V

Notachieved

T. Sakurai, IEICE Trans. Electron., Vol.E87‐C, April 2004, pp. 429‐436.A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 11: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Reducing threshold voltage by 60mVReducing threshold voltage by 60mVincreases the leakage current (power) by ~10 times

Source: Intel Corporation

VsVt

dd eVtVgIVgI

)()0(

11A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 12: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Conduction band profile in transport directionin a long channel MOSFET.

• The gate voltage moves the conduction band downwards, so that a larger fraction of the exponential tail of the source Fermi distribution can contribute to the current.•This gives rise to the exponential increase of the current.

12A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

This gives rise to the exponential increase of the current.

Page 13: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

2 VILCVLEEE

22 offdddddd

delayddoffddddleakagedynamictotal

ICVLCVL

VILCVLEEE

)10()( /22 SVoff

ondddddd

CI

C

ICVLCVL

)10()( /22 SVddd

on

offddd

ddCVLI

CVL

ddoffddddoffddD VIKCVVIfCVLP 32

a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage power (with ultra‐low Ioff due to a small S, as the TFET) co ld offer a po er dissipation red ction of 125

13A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

could offer a power dissipation reduction of 125x.

Page 14: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Parallelism (multi‐core) is a key Lower CMOS fundamental limit in a a e s ( u co e) s a eytechnique to improve system performance under a power budget

Lower CMOS fundamental limit in energy per operation by subthermal S novel devices

14A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011Source: T.J. King, UC Berkeley.Source: A.M. Ionescu, H. Riel, to appear.

Page 15: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

• Improving the MOSFET switch: evolutiveevolutive, additive , additive technology boosters.technology boosters.– Channel engineering to reduce the Vdd‐Vt (Ge, III‐V,Channel engineering to reduce the Vdd Vt (Ge, III V, graphene, etc).

– Nanowire and nanotube FETs for improved– Nanowire and nanotube FETs for improved electrostatic (subthreshold leakage) control.

R d th V d V b l ll i it hll i it h• Reduce the VT and Vdd by a novel small swing switch.small swing switch.

15A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 16: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Tunnel FET vs future FET # Small swing switchesTunnel FET vs. future FET # Small swing switches

nt, log

 I d

IMOSTFET

ain curren IMOS

NEMl

NC‐FETMOSFET

Dra relay

0 VddGate voltage, Vgs

16A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Tunnel FET is the most promising small swing switch for Vdd scaling.

Page 17: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

)(3*24

exp5.1

gWKBBTB E

EmTI

)(3 gE

17A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 18: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Integration of a Field Effect Transistor (FET) into the suspended body of a silicon nanowire orIntegration of a Field Effect Transistor (FET) into the suspended body of a silicon nanowire or carbon nanotube resonator results in integrated sensors withmass‐sensitivity below 10‐19 grams and power consumption in the order of nW.

[Hierold lab]Nanotera CABTURES (ETHZ)

18

[Ionescu lab/ Bartsch et al, IEDM 2010]A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 19: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

19A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011Source: Ch. Hierold, ETHZ.

Page 20: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

The application of energy harvesters is driven by system requirements:

• Energy efficiency by recovery of dissipated energy and renewable energy Energy efficiency by recovery of dissipated energy, and renewable energy‐ solar energy, automotive and industrial systems

• Autonomy to avoid battery replacement and infrastructure costsindustrial automation sensor networks for environmental‐ industrial automation, sensor networks for environmental

monitoring and structural health, building automation• Autonomy for convenience in wearable electronic devices

h l h / h lif l h i i‐ sport, health / home care, life style, short range communication

There is no winning concept:There is no winning concept:There is no winning concept:There is no winning concept:The analysis of the system specification defines the right type ofharvester or combination of harvesters

20A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 21: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Bio inspired energy scavenging: artificial photosynthesisBio‐inspired energy scavenging: artificial photosynthesis

• Environmentally f i dl i lfriendly materials• High efficiency in‐door & out‐door

21

• Low cost processingA.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 22: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

22A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 23: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

oo Society and lifeSociety and life– as personal companions, GA’s will preserve human health and improve the 

quality of life for all categories of ages, in an affordable way– GA’s will make our environment more interconnected and smart, more energy 

efficient and safe– Disrutive technology focused on prevention based on augmented information for 

personal level decisionpersonal level decisionoo Leadership in science and technologyLeadership in science and technology

– leading role of Europe in zero‐power novel technologiesbl l f f– enabling a stronger role of manufacturing in Europe

– improving the competitiveness for leading communication and medical companies

E l tE l too EmploymentEmployment– creation of new employment in Europe in ICT domain– new business opportunities

23A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 24: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

PharmacoPharmaco therapytherapyPharmacoPharmaco‐‐therapytherapyo early detection of treatment inefficiency or relapses.

PreventionPrevention/diagnostic/diagnostic

Early detection of abnormalitiesby a Guardian Angel 

o early signature of disease, metabolic and cardiacdisorders.

continuous monitoring– Homeostasis

• HormonalM b li• Metabolic

– Compliance to treatmentsBiomarkers– Biomarkers

• Cancer• Infectious diseases

Physical parameters– Physical parameters• Activity• Circadian rhythm• ECG EEG

24

• ECG, EEG

A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 25: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

Gideon Varga, Industrial Technologies Program U.S. Department of Energy 

Initiatives for improving p gthe energy inefficiency of complex systems:

IBM’s Smarter Planet Intel’s Green initiative

25A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011

Page 26: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

May 4th, 2011 Perhaps the most futuristic is Guardian May 4th, 2011 pAngels which will use computing and imaginative energy research to create the ultimate smart device that will assist humansfrom infancy to old age

26

Page 27: Adrian MAdrian M. Ionescu - IEEE 日本カウンシル · V dd 2 3 a technology that would enable a voltage scaling by a factor of 5 (from 1 V to 0.2 V) with a negligible leakage

27A.M. Ionescu, IS‐AHND, Tokyo, Japan, October 2011