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Type :JOURNAL (Ty)
Journal Title - Journal of Physical Chemistry B (T2)
Volume - 109 (VL)
Issue - 42 (IS)
Start page - 19839 (SP)
End Page - 19844 (EP)
Published Year - 2005 (PY)
Morphological and spectroscopic properties of thin films of self-assembling amphiphilic
porphyrins on a hydrophilic surface as revealed by scanning near-field optical microscopy
(T1)
Nagahara, T1. Imura, K2. Okamoto, H3. Oguro, A4. Imahori, H5. (AU)
Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan (AD)
Graduate University for Advanced Studies, Myodaiji, Okazaki 444-8585, Japan
Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-Ku,
Kyoto 615-8510, Japan
Fukui Institute for Fundamental Chemistry, Kyoto University, 34-4, Takano-Nishihiraki-cho, Sakyo-ku, Kyoto 606-
8103, Japan
Abstract (AB)
We fabricated porphyrin thin films on mica surfaces from acidic aqueous solutions of the
preorganized H-aggregates of amphiphilic porphyrins by the simple spin-coating method. The
morphological and spectroscopic properties of the film were investigated by scanning near-field
optical microscopy. The results obtained in this study demonstrate that the preorganized structure
in solution can be transferred as a thin film with a thickness of the monolayer level without
losing their substantial structure and photophysical properties. © 2005 American Chemical
Society.
Cited By (since 1996):8 (N1)
Export Date: 14 October 2014 (N1)
Database: Scopus (DB)
References: (N1)
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27744594658&partnerID=40&md5=cd1c188c90e864fda2c1a090f264ee91
ER -
Type - JOURNAL
Journal Title - Journal of Alloys and Compounds
Volume - 612
Start Page - 34
End Page - 41
Published Year - 2014
A method based on optical and atomic force microscopes for instant imaging of non-
homogeneous electro-mechanical processes and direct estimation of d ij coefficients in
piezoelectric materials at the local level
Stamopoulos, D. Zhang, S.J.
Institute of Advanced Materials, Physicochemical Processes, Nanotechnology and Microsystems, National Center
for Scientific Research 'Demokritos', 15310 Agia Paraskevi, Greece
Materials Research Institute, Pennsylvania State University, University Park, PA 16801, United States
Abstract
Ferroelectric materials have attracted much interest due to their wide and important
technological applications. Regarding their piezoelectric properties, these materials are evaluated
by means of relatively complicate global methods. In this work a comparatively simple and
efficient local method for the direct estimation of the dij coefficients is presented. The method is
based on conventional optical microscopy (OM) and advanced Atomic Force Microscopy (AFM)
employed to image the local deformation of a specimen upon variation of a dc electric field. The
feasibility and reliability of the method is demonstrated at room temperature in single crystals of
(1-x)Pb(Mg1/3Nb 2/3)O3-xPbTiO3. Non-homogeneous electro-mechanical processes are
detected. Accordingly, the estimated d ij coefficients exhibit a spatial variation over the crystal
surface. Except for electro-mechanical systems, the introduced local method could find wide
application for the investigation of spatially non-homogeneous properties that possibly exist in
relevant magneto-mechanical and thermo-mechanical complex systems. © 2014 Elsevier B.V.
All rights reserved.
Keyword: Atomic force microscope, Non-homogeneous electro-mechanical processes, Optical
microscope, Piezoelectric coefficients, Strain-electric field curve
Cited By (since 1996):1
Export Date: 14 October 2014
Database: Scopus
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ER -
Type - JOURNAL
Journal Title - Reviews of Modern Physics
Volume - 75
Issue - 3
Start Page - 949
End Page - 983
Published Year - 2003
Advances in atomic force microscopy
Giessibl, F.J.
Experimentalphysik VI, Institute of Physics, Augsburg University, D-86135 Augsburg, Germany
Abstract
This article reviews the progress of atomic force microscopy in ultrahigh vacuum, starting with
its invention and covering most of the recent developments. Today, dynamic force microscopy
allows us to image surfaces of conductors and insulators in vacuum with atomic resolution, The
most widely used technique for atomic-resolution force microscopy in vacuum is frequency-
modulation atomic force microscopy (FM-AFM). This technique, as well as other dynamic
methods, is explained in detail in this article. In the last few years many groups have expanded
the empirical knowledge and deepened our theoretical understanding of frequency-modulation
atomic force microscopy. Consequently spatial resolution and ease of use have been increased
dramatically. Vacuum atomic force microscopy opens up new classes of experiments, ranging
from imaging of insulators with true atomic resolution to the measurement of forces between
individual atoms.
Cited By (since 1996):806
Export Date: 15 October 2014
Scopus
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UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-
0141990921&partnerID=40&md5=a01f80a74adac4f22121e2d67580891f
ER -
Type JOURNAL
Journal Title - Sensors and Actuators, A: Physical
Volume - 216
Start Page - 231
End Page - 236
Published Year - 2014
Fabrication and characterization of large-area flexible microfluidic organic light-emitting
diode with liquid organic semiconductor
Tsuwaki, M. Kasahara, T. Edura, T. Matsunami, S. Oshima, J. Shoji, S. Adachi, C. Mizuno, J.
Department of Nanoscience and Nanoengineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555,
Japan
Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi,
Fukuoka 819-0395, Japan
Nissan Chemical Industries, Ltd., 2-10-1 Tsuboi-nishi, Funabashi, Chiba 274-8507, Japan
Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda tsurumakicho, Shinjuku, Tokyo
162-0041, Japan
Abstract
We propose simple and high-throughput fabrication of large-area flexible microfluidic organic
light-emitting diodes (microfluidic OLEDs). Flexible electro-SU-8-microchannels with a liquid
emission layer were fabricated by the following four steps: (a) screen printing for transparent
electrodes, (b) novel belttransfer exposure for SU-8, (c) heterogeneous low-temperature bonding
using self-assembled monolayers (SAMs), and (d) injecting a liquid emitter into the
microchannels. 1-Pyrenebutyric acid 2-ethylhexyl ester (PLQ), which is on of liquid organic
semiconductors, was used as a liquid emitter. The liquid emitter successfully filled the flexible
microchannels, and electroluminescence was obtained both in flat and curved states. The
proposed microfluidic OLED is applicable for future flexible posters or displays, and can be
adopted around curved surfaces. © 2014 Elsevier B.V. All rights reserved.
Keywords: Belt-transfer exposure, Flexible OLED, Liquid emitter, Liquid OLED, Liquid organic semiconductor,
Microfluidic OLED
Export Date: 15 October 2014
Database: Scopus
References:
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84903279705&partnerID=40&md5=f8490722549f45f0ea9393c3a6becf90
ER -
Type - JOURNAL
Journal Title -Journal of Surface Science and Nanotechnology
Volume - 12
Start Page - 157
End Page - 164
Published Year - 2014
Manipulation of organic molecules in ambient condition and liquid studied by scanning
tunneling microscopy
Takami, T.
Department of Physics, Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, South Korea
VRI Inc. 4-13-13 Jingumae, Shibuya, Tokyo 150-0001, Japan
Abstract
This review describes how the manipulation of single molecules on solid state surface is
available in air or at the liquid/solid interface, observed with scanning tunneling microscope
(STM). First, the influences of the STM tip on the observation and manipulation of molecules
are discussed. Then how the STM tip induced the ordering and how the molecular structures on
the surface can be manipulated are shown. Second, the manipulation of single molecules with
STM tip is demonstrated. Last, the STM observations of the manipulation of molecules by
changing the ambient conditions such as solvent, photon irradiation, and electrochemical
potential, are shown. © 2014 The Surface Science Society of Japan.
Keywords: Atom/molecule manipulation, Graphite, Phthalocyanine, Porphyrin, Scanning
tunneling microscopy, Self-assembled monolayer
Export Date: 14 October 2014
Database: Scopus
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84899002682&partnerID=40&md5=a4b8a64c52480cc00a50e301b835ace1
ER -
Type – JOURNAL
Journal Title - Applied Surface Science
Volume - 313
Start Page - 311
End Page - 319
Published Year - 2014
Effect of nitrogen incorporation on the structural, optical and dielectric properties of
reactive sputter grown ITO films
Gartner, M. Stroescu, H. Marin, A. Osiceanu, P. Anastasescu, M. Stoica, M. Nicolescu, M. Duta,
M. Preda, S. Aperathitis, E. Pantazis, A. Kampylafka, V. Modreanu, M. Zaharescu, M.
Institute of Physical Chemistry Ilie Murgulescu, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest,
Romania
FORTH-IESL, Crete, Greece
Tyndall National Institute, University College Cork, Cork, Ireland
Abstract
The changes in the optical, microstructural and electrical properties, following the nitrogen
incorporation into indium tin oxide thin films are investigated. The films are formed by r.f.
sputtering from an indium-tin-oxide (80% In2O3-20% SnO2) target in a mixture of Ar and N2
plasma (75% N2-25% Ar and 100% N2 respectively) on fused silica glass substrate. The impact
of rapid thermal annealing (up to 500 °C, in N2 ambient) on the properties of indium tin
oxynitride (ITON) thin films is also reported. The UV-vis-NIR ellipsometry (SE)
characterization of ITON films was performed assuming several realistic approaches based on
various oscillator models, using a chemical composition gradient depth profiling, in agreement
with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the
ITON films prepared by r.f. sputtering in 75% N2 and annealed at 500 °C behave as degenerate
semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous
structure even after RTA at 500 °C in N 2 ambient and atomic force microscopy showed the
formation of continuous and smooth ITON thin films, with a morphology consisting in
quasispherical nanometric particles. © 2014 Elsevier B.V. All rights reserved.
Keywords: Hall measurements, ITON, r.f. sputtering, Spectroscopic ellipsometry, Surface
chemistry, Surface morphology
Export Date: 15 October 2014
Data Base - Scopus
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84904809297&partnerID=40&md5=138c91c40105b9699a4ed15932c2b353
Type - JOURNAL
Volume - 314
Start Page - 1082
End Page - 1086
Published Year - 2014
Journal Title - Applied Surface Science
Electrical properties of SAM-modified ITO surface using aromatic small molecules with
double bond carboxylic acid groups for OLED applications
Can, M. Havare, A.K. Aydin, H. Yagmurcukardes, N. Demic, S. Icli, S. Okur, S.
Izmir Katip Celebi University, Faculty of Engineering, Department of Engineering Sciences, Çiǧli, Izmir, Turkey
Toros University, Faculty of Engineering, Electric and Electronic Department, Mersin, Turkey
Izmir Institute of Technology, Material Science and Engineering, Izmir, Turkey
Izmir Katip Celebi University, Faculty of Engineering, Department of Material Science and Engineering, Çiǧli,
Izmir, Turkey
Ege University, Solar Energy Institute, Izmir, Turkey
Abstract
5-[(3-Methylphenyl)(phenyl)amino]isophthalic acid (5-MePIFA) and 5-
(diphenyl)amino]isophthalic acid (5-DPIFA) organic molecules were synthesized to form self-
assembled monolayer on indium tin oxide (ITO) anode to enhance hole transport from ITO to
organic hole transport layers such as TPD. The modified surface was characterized by scanning
tunneling microscopy (STM). The change in the surface potential was measured by Kelvin probe
force microscopy (KPFM). Our Kelvin probe force microscopy (KPFM) measurements showed
that the surface potentials increased more than 100 mV with reference to bare indium tin-oxide.
The results show that the threshold voltage on OLEDs with modified ITO is lowered
significantly compared to OLEDs with unmodified ITO. The hole mobility of TPD has been
estimated using space-charge-limited current measurements (SCLC). © 2014 Elsevier B.V.
Keywords: Carboxylic acid, OLED, SAM, SCLC
Export Date: 15 October 2014
Data Base - Scopus
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84906785720&partnerID=40&md5=d87b3ab0826115e8082f5ca700a2ed4d
ER -
Type - JOURNAL
Journal Title - Applied Surface Science
Volume - 297
Start Page - 195
End Page - 204
Published Year - 2014
Thermally induced evolution of sol-gel grown WO3 films on ITO/glass substrates
Caruso, T. Castriota, M. Policicchio, A. Fasanella, A. De Santo, M.P. Ciuchi, F. Desiderio, G. La Rosa, S. Rudolf,
P. Agostino, R.G. Cazzanelli, E.
Dipartimento di Fisica, Università della Calabria, ponte Bucci cubo 31c, I-87036 Arcavacata di Rende, CS, Italy
CNR-IPCF UOS di Cosenza, Center of Excellence CEMIF.CAL, Licryl Laboratory, 87036 Rende, CS, Italy
Consiglio Nazionale Interuniversitario di Scienze Fisiche della Materia, via della Vasca Navale, 84, 00146 Roma,
Italy
Sincrotrone Trieste, Area Science Park, S.S. 14 km 163.5, I-34012 Basovizza, Trieste, Italy
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747AG Groningen,
Netherlands
Abstract
The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-
gel route and deposited on ITO/glass substrates by spin-coating, were analyzed as a function of
annealing temperature (100-700 C range) by Scanning Electron Microscopy, Atomic Force
Microscopy, micro-Raman spectroscopy, X-ray Diffraction and Photoelectron Spectroscopy. We
have found evidence of two competing processes when the film is annealed at high temperatures
(600-700 C): a structural phase transition from amorphous to crystalline WO3 and a temperature-
activated diffusion of sodium ions, from the substrate into the WO3 film, which induces the
formation of sodium tungstate. The surface of the films was found to be oxygen deficient after
deposition but reverted to fully oxidized WO3 after high temperature annealing in air. The
annealing also induced a restructuring of the films with formation of nano-crystalline aggregates.
The influence of film thickness on these processes was also investigated. © 2014 Elsevier B.V.
All rights reserved.
Keywords: Photoelectron spectroscopy, Raman spectroscopy, Sodium diffusion, Sol-gel, Thin
film annealing, Tungsten trioxide
Cited By (since 1996):1
Export Date: 15 October 2014
Data Base - Scopus
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UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-
84894622567&partnerID=40&md5=674fc9a537f9196f30ebcff5cf0b2575
Type - JOURNAL
Journal Title - Journal of Industrial and Engineering Chemistry
Volume - 20
Issue - 4
Start Page - 1198
End Page - 1208
Published Year - 2014
Organic materials for organic electronic devices
Lee, C.W. Kim, O.Y. Lee, J.Y.
Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Gyeonggi-do,
Yongin-si 448-701, South Korea
Abstract
In recent years, organic electronic devices which use organic materials as an active layer have
gained considerable interest as light-emitting devices, energy converting devices and switching
devices in many applications. In these organic electronic devices, the organic materials play a
key role of managing the device performances and various organic materials have been
developed to improve the device performances of organic electronic devices. In this paper, recent
developments of organic electronic materials for organic light-emitting diodes and organic solar
cells were reviewed. © 2013 The Korean Society of Industrial and Engineering Chemistry.
Keywords: Organic electronic devices, Organic light-emitting diode, Organic materials, Organic
solar cells
Cited By (since 1996):1
Export Date: 15 October 2014
Data Base - Scopus
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UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-
84900814102&partnerID=40&md5=0cf92f87ed315fd78289fd5521ed92b0
Type - JOURNAL
Journal Title - Journal of Polymer Engineering
Volume - 34
Issue - 4
Start Page - 279
End Page - 338
Published Year - 2014
Organic semiconductors for device applications: Current trends and future prospects
Ahmad, S.
Center of Excellence in Nanotechnology, Confederation of Indian Industry Western Region, Ahmedabad, Gujarat
380006, India
Abstract
With the rich experience of developing silicon devices over a period of the last six decades, it is
easy to assess the suitability of a new material for device applications by examining charge
carrier injection, transport, and extraction across a practically realizable architecture; surface
passivation; and packaging and reliability issues besides the feasibility of preparing mechanically
robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material
preparation, parameters such as purification of constituent materials, crystal growth, and thin-
film deposition with minimum defects/disorders are equally important. Further, it is relevant to
know whether conventional semiconductor processes, already known, would be useable directly
or would require completely new technologies. Having found a likely candidate after such a
screening, it would be necessary to identify a specific area of application against an existing list
of materials available with special reference to cost reduction considerations in large-scale
production. Various families of organic semiconductors are reviewed here, especially with the
objective of using them in niche areas of large-area electronic displays, flexible organic
electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve
mobility and stability by adjusting-conjugation and modifying the energy bandgap. Higher
conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and
metal nanoparticles, open exciting methods of designing flexible contact/interconnects for
organic and flexible electronics as can be seen from the discussion included here. © 2014
Walter de Gruyter GmbH, Berlin/Boston.
Keywords: Conjugated polymers, Crystalline/polycrystalline organic compounds, Hopping
conduction, Organic field-effect transistors, Organic semiconductors
Export Date: 15 October 2014
Data Base - Scopus
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