a robust, composite packaging approach for a high voltage 6.5kv igbt … · 2017-04-25 · ©2015...

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PREES Laboratory P ACKAGING R ESEARCH IN E LECTRONIC E NERGY S YSTEMS NC STATE UNIVERSITY www.PREES.Org ©2015 Douglas C Hopkins [email protected] IMAPS 2015 10/26/15 – 10/29/15 Speaker: Adam Morgan Authors: Adam Morgan, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Dr. Douglas C. Hopkins, Dr. Subhashish Bhattacharya Emails: [email protected], [email protected], [email protected], [email protected], [email protected], [email protected], [email protected] A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode www.PREES.Org ©2015 Douglas C Hopkins PREES Laboratory P ACKAGING R ESEARCH IN E LECTRONIC E NERGY S YSTEMS NC STATE UNIVERSITY [email protected] Introduction Current Switch IGBT & Diode MOSFET & Diode Reverse Blocking IGBT Series connected transistor and diode make up the basic switching unit of power converter Provides bidirectional blocking, and unidirectional current characteristic Design application is for a solid-state transformer for the Smart Grid WHAT ARE THE PROS AND CONS WHAT IS THE PURPOSE OF SHOWING THESE WHAT DOES A MECHANICAL ENGINEER NEED TO KNOW ABOUT THESE

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Page 1: A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT … · 2017-04-25 · ©2015 Douglas C Hopkins PREES Laboratory NC STATE UNIVERSITY PACKAGING RESEARCHINELECTRONIC

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

www.PREES.Org©2015 Douglas C Hopkins

[email protected]

IMAPS 2015 10/26/15 – 10/29/15

Speaker: Adam Morgan

Authors: Adam Morgan, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Dr. Douglas C. Hopkins, Dr. Subhashish Bhattacharya

Emails: [email protected], [email protected], [email protected], [email protected], [email protected], [email protected],

[email protected]

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Introduction – Current Switch

IGBT & Diode MOSFET & Diode Reverse Blocking IGBT

• Series connected transistor and diode make up the basic switching unit of power converter

• Provides bidirectional blocking, and unidirectional current characteristic• Design application is for a solid-state transformer for the Smart Grid

WHAT ARE THE PROS AND CONSWHAT IS THE PURPOSE OF SHOWING THESEWHAT DOES A MECHANICAL ENGINEER NEED TO KNOW ABOUT THESE

Page 2: A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT … · 2017-04-25 · ©2015 Douglas C Hopkins PREES Laboratory NC STATE UNIVERSITY PACKAGING RESEARCHINELECTRONIC

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Introduction – Current Switch-based Topologies

• Advantages:• Matured technology• Uses conventional

controller• Disadvantages:

• 3 Stages = greater number of devices

• Hard switched• Bulky capacitors

A B C A’ B’ C’

Rectifier DC/DC with Isolation Inverter

Va Vb Vc Vo a Vo b Vo c

S1

S2

S3

S4

T1

T2

T3

T4

S5

S6

T5

T6

L

• Advantages:• Low number of devices• Soft switched• High fsw = smaller passive

components• Disadvantages:

• Complex controller

DO PEOPLE KNOW WHAT “SOFT SWITCHED” MEANS?

DO YOU EXPECT PEOPLE IN THE LAST ROW TO SEE THIS?

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Effect of Packaging Parasitics on Series Current Switch

IGBT Voltage for L=80µH and 160µH

IGBT Current for C=150pF & 300pF

LOS1D1

S2D2

Vin

LDUT

LOS1D1

S2D2

VinC

DUT

Test circuit with parallel parasitic capacitance

Test circuit with series parasitic inductance

Page 3: A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT … · 2017-04-25 · ©2015 Douglas C Hopkins PREES Laboratory NC STATE UNIVERSITY PACKAGING RESEARCHINELECTRONIC

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Composite vs. Discrete Packaging

TerminalBus Bar

IGBT/ MOSFET

Anti-Parallel Diode

Bond Wire

Series Diode

Terminal

IGBT/ MOSFET

Anti-Parallel Diode

Bond Wire

Two Package Series Current Switch (TPSCS)• Added interconnect b/w packages

leads to greater voltage overshoots• Larger area of substrate metallization

leads to larger current overshoots

Composite Series Current Switch Package (TPSCS)

• Minimizes contributions of packaging parasitics

• Offers a more robust switching unit

• Greater power density

WHY SUCH HIGH “TERMINALS”. WAY TOO MUCH INDUCTANCE (PARASITICS YOU’RE TRYING TO AVOID). DOESN’T EVEN LOOK PRACTICAL

WHAT’S B/W – BLACK & WHITE??? EVEN I DON’T KNOW WHAT THIS MEANS

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Advantages of Stacked Wire Bonds

Frequency (kHz)

N = 1 N = 2 N = 3

Single (nH) Stacked (nH) Single (nH) Stacked (nH) Single (nH) Stacked (nH)

0.1 8.32 6.81 5.90 4.42 4.78 3.39

100 8.27 6.64 5.66 3.73 4.34 2.60

500 7.97 6.25 5.29 3.49 4.03 2.43

• Simulation results obtained using ANSYS Q3D

• Actual performance comparison b/w CSCSP’s with and without stacked wire bonds from IGBT to series diode is currently ongoing

Hesse Mechatronics BJ939 Heavy Bonder

WHAT IS “CSCSP” I’M NOT EVEN SURE PEO[LE WILL KNOW WHERE THE“INDUCTANCE” IS OR EVEN WHAT “OVERHSOOT” MEANSSPECIFIC TO YOUR CIRCUIT.

Page 4: A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT … · 2017-04-25 · ©2015 Douglas C Hopkins PREES Laboratory NC STATE UNIVERSITY PACKAGING RESEARCHINELECTRONIC

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

CSCSP Thermal Consideration

• Maximum device junction temperature = 150⁰C• Power losses as a function of switching loss

• Calculated @ V=3600V, Ic=20A• Derived from datasheet typical loss data

• COMSOL simulation shows max Tj = 146⁰C using Alumina DBC of original CSCSP design

• Improved cooling method and thermal interface material offer greater fsw

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

CSCSP Packaging Materials

• Substrate: Etched Curamik Alumina DBC 12/25/12 mil, Ni-plated• Terminals: Copper, cut and drilled• Power Semiconductor Die:

• IGBT: ABB 6.5kV, 25A Si• Series Diode: CREE 6.5kV, 25A SiC JBS • Anti-parallel Diode: 6.5kV, ?A Si

• Flexible Welded Interconnects: Heraeus 15mil Al wire (99.99% pure) • Housing: Stratasys PolyJet Connex 350 3D Printed VeroWhitePlus RGD836• Die/Terminal Attachment: ?• Power Stage Adhesive: 3M ?

SO YOU HAVE SHOWED US WHAT YOU HAVE DONEYOU’VE TOLD US WHAT YOU HAVE DONEBUT YOU HAVEN’T TOLD US WHAT CONTRIBUTION YOU HAVE MADE TO THE INDUSTRY OR TO THE TECHNOLOGY. WHY DID THE ATTENDEE SIT THROUGH 30 MINUTESOF SLIDES? WHAT IS THE “TAKE AWAY”? WOULD THEY WANT TO SEE THIS TALK AGAIN? WOULD THEY WANT TO SEE YOU PRESEANT AGAIN?

Page 5: A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT … · 2017-04-25 · ©2015 Douglas C Hopkins PREES Laboratory NC STATE UNIVERSITY PACKAGING RESEARCHINELECTRONIC

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

CSCSP Electrical Testing

• High voltage double-pulse test setup• Successful switching up to 4kV• No noticeable voltage overshoot during turn-off• Minimal current overshoot during turn-on

Turn-off transition of CSCSPTurn-on transition of CSCSP

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Summary

• A single, composite package approach for series current switch offers greater system robustness due to minimized package parasitics

• Double-pulse testing results display low voltage and current overshoots during switching

• High frequency converters, such as current source based SST, can take advantage of custom Level 1 packaging compared with commercial-off-the-shelf, discrete packages

• Stacked wire bonds have potential to further reduce package parasitics

• Use of 3D printing, along with ability to perform entire packaging process, for rapid-prototyping offers swift realization and testing

• Continuous converter testing using multiple CSCSP’s is now being pursued

Page 6: A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT … · 2017-04-25 · ©2015 Douglas C Hopkins PREES Laboratory NC STATE UNIVERSITY PACKAGING RESEARCHINELECTRONIC

www.PREES.Org©2015 Douglas C Hopkins

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

[email protected]

Acknowledgements

This work made use of FREEDM Systems Center ERC shared facilities supported by the National Science Foundation (NSF) under award number EEC-08212121, as well as the

facilities and equipment located within the PREES Laboratory and its sponsors.

P R E E SL a b o r a t o r y

PACKAGING RESEARCH IN ELECTRONIC ENERGY SYSTEMSNC STATE UNIVERSITY

www.PREES.Org©2015 Douglas C Hopkins

[email protected]

THANK YOU