a novel probe-card for 8 inch full wafer contact …...probe cards from x16 up to 200mm fwc. •...
TRANSCRIPT
A novel probe-card for 8 inch full wafer contact using MLS 2005 South West Test Workshop
June 5 - 8, 2005
Fred MegnaMicronics Japan Co. LTD (Phoenix office)1201 S. Alma School Rd.Suite 7550Mesa, AZ 85210
Tatsuo InoueMicronics Japan Co. LTD (Aomori plant)571-2 Minamida, Oaza-Machii,Hiraka-cho, Minamitsugaru-gun,Aomori 036-0114 Japan
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 2
Outline • Introduction• Background• FWC Probe Card Specifications • Structure• Micro Cantilever• MLS• Multilayer PWB• Evaluation• Future Work• Conclusion• Acknowledgements
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 3
Introduction• In Dec. 2004 MJC announced a probe-card for 8 inch full
wafer contact (FWC) (Nikkei Micro-devices News; 02-Dec. ).
– Micro-cantilevers;which make contact withthe LSI wafer bond pad
– MLS (Multi-Layer ceramic/thin-film Substrate);which is the interface between the micro cantilevers and the PWB
– Multi-layer PWB; the main body of the probe-card
• The dominant structure of this probe-card consists of;
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 4
Background• LSI memory Reducing TAT
Increasing Density 1~2 Gbits Memory
Quickly increasing to 8 Gbits
• Product cycle dynamics; requireunscheduled production changes ~1x per quarter.
• Advanced probe cards; delivered in 8 to 16 weeks.
Tape out to silicon of 6 to 8 weeks shortening to 5 weeks
Tape outFirst Silicon
Probe-card?!?!
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 5
Background • Highly parallel probe-card
FWC probe-card ; enables outgoing test efficiency
• Requirements for leading edge probe-cards;1. High density contact. 2. Reduced TAT (6 weeks). 3. Highly parallel (FWC is desirable).
Tape outFirst Silicon
Probe-card!!!!!
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 6* Specification may change without notice
1.3g/25µm
15µm□
<30µm
<±15µm
<□200mm
>60µm×65µm
>=100µm
Specification
5.Tip planarity
6.Tip size
7.Tip force
4.XY accuracy
3.Probe area
2.Pad size
1.Pad pitch
Item
•Spe
cific
atio
n fo
r FW
C P
robe
-car
d
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 7* Specification may change without notice
RT~105℃14.Temperature range
<=400mA 11.Current per probe
<=200MHz12.Frequency
270µm10.MLS to tip Height
<=500K TDs
8.3 or 12mm
<25µm
<=100µm (FC)
Specification
9.Scrub mark size
8.Over drive
13.Probe depth
15.Contact Life
Item
•Spe
cific
atio
n fo
r FW
C P
robe
-car
d
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 8
Multi-layer PWB
Micro-cantileversMLS
HandleStiffener
Structure • Structure of the FWC probe-card consists of Micro-cantilevers,
MLS and Multi-layer PWB
φ440
φ295
φ295
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 9
• MJC’s micro-cantilever is fabricated by photolithography • Reduced size • Consistent, well-balanced performance
• A single row of micro-cantilevers with 100μm pitch is shown bellow
• 80μm pitch is coming soon.
Micro Cantilever
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 10
MLS (Multi-Layer ceramic/thin-film Substrate)
PolyimideLayers
• MLS; wiring substrate consists of thin-film metal layers andpolyimide dielectric layers on a co-fired ceramic substrate.
• MLS technology was developed in 1985 by NEC for use in their supercomputers.
• NEC developed more than 20 MLS types based on one standard ceramic substrate. Ceramic TH
φ=0.2mmPitch=1.5mm
Ceramic Substratet=3mm
Metal Pad & GND
Signal & PS Layer
GND Layer
I/O Pad
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 11
• MJC is now manufacturing MLS under license of NEC. • Utilizing (5) standard ceramic substrate sizes, we are able to build
probe cards from x16 up to 200mm FWC.• Utilizing standard ceramic sizes results in zero TAT for the ceramic
portion.
MLS (Multi-Layer ceramic/thin-film Substrate)
Metal Layer 0
Metal Layer 1
Metal Layer 2
Metal Layer 3
Bottom Dielectric Layer
Dielectric Layer 0
Dielectric Layer 1
Dielectric Layer 2
Dielectric Layer 3Metal Layer 4
Ceramic
Thin Film < 100um
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 12
(a) Photograph ofSignal Layer (Line width=25μm)
(b) Cross Section ofPolyimide Thin-film Layers
Ceramic Multi-Layer Build-up StandardSubstrate Substrate PCB PCB
Via pitch 0.635 0.1 0.141 0.5Via Pad Dia. 0.381 0.052 0.075 0.35Via hole Dia. 0.203 0.032 0.05 0.15Via Pad to line Clearance 0.254 0.012 0.025 0.15
Line Width 0.127 0.025 0.025 0.07Space Width 0.127 0.025 0.025 0.071mm□ Via Count 1.2 100 50 3
Max Layer Count 22L 9L 8L 40LMask metal glass film(glass) filmsize 220x220mm 225x225mm 250x250mm 500x500mm
thickness max 5mm 100-200um 4.8mm 6.2mm
•• Comparison with other technologiesComparison with other technologies
MLS (Multi-Layer ceramic/thin-film Substrate)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 13
• MLS Comparison to other technologiesMLS
Build-Up PCB
PCB with Buried Via-Holes100μm 25μm
100μ
m25
μm
25μ
m
25μm
100μm 25μm 25μm
100μ
m25
μm
25μ
m
1.00mm
1.00
mm
80μm
120μm
110μm
0.50mm
100 Via/mm2
50 Via/mm2
3 Via/mm2
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 14
12W11W10W9W8W7W6W5W4W3W2W1W
MLC design MLC (Multi-Layer Ceramic) fabrication Shipment
Ass’y, Inspection
Ass’y, Inspection
MLS fabrication
•MLS Reducing total TAT
Shipment
PCB design
PCB fabrication
MLS design
PCB design
PCB fabrication
Stocked ceramic
Reducing TAT !
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 15
Multi-layer PWB• Applying MLS techniques to the PWB
– Evolve the PWB to be standard (Test Platform and Device Family)
– Similar to the MLS (ceramic), the PWB has only common patterns and through holes
– Manufacturing each final probe card• Routing for specific devices is achieved in the thin
film layer of the MLS
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 16
Evaluation• Life Test
– 0 to 500K TD• Mechanical
– Scrub– Contact force– Peel strength– Joint strength
• Electrical– TDR– Signal Propagation– Contact Resistance
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 17
• Z Height vs Touch Downs
Zheig h t vs TD
02468
101214161820
Initial 100k 200k 300k 400k 500kNumber of TDs
Z H
eig
ht (
um
)
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 18
Scrub Leng th vs OD
0
5
10
15
20
25
20 40 60 80 100 120 140OD(um)
Length
(um
)
Scrub Dep th vs OD
0.00.10.20.30.40.5
20 40 60 80 100 120 140OD(um)
Depth
(um
)05-Apr-2005
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 19
針圧測定結果
0.00
1.00
2 .00
3 .00
4 .00
5 .00
6 .00
7 .000
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
OD(μm)
針圧
(gf) MAX
MIN
AVE
Contact Force vs ODC
onta
ct F
orce
(g)
OD (um)Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 20
• Peel Strength of MLSType1; 4mm Polyimide Pad
on Ceramic Substrate
Type2; 4mm Copper Padon Polyimide Layer
Type3; 4mm Copper Padon Ceramic Substrate
Polyimide
Copper Studpull
Ceramic Substrate
Copper Pad
Solder
Storage Conditions ;
No.1 –40℃
No.2 110℃
No.3 180℃
No.4 0~ 196℃ Cycle
Copper Pad
Evaluation (Mechanical)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 21
Type1:□ 4mm Polyimide Pad on Ceramic Substrate
0. 01. 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
8. 0
9. 0
10. 0
10 100 1000 10000Storing Time(H)
Uni
t Stre
ngth(
Kgf/
mm2)
-40℃ Storing
110℃ Storing
180℃ Storing
• Peel Strength of MLS
Target Strength0.15Kgf/mm2 = 1.5N/mm2
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 22
Type 2; □4mm Copper Pad on Polyimide
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
10 100 1000 10000Storing Time (H)
Uni
t Stre
ngth(
Kgf/m
m2)
-40℃ Storing
110℃ Storing
180℃ Storing
• Peel Strength of MLS
Target Strength0.15Kgf/mm2 = 1.5N/mm2
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 23
Type 3; □4mm Copper Pad on Ceramic Substrate
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
10 100 1000 10000
Storing Time (H)
Uni
t Stre
ngth
(Kg
f/mm
2)
-40℃ Storing
110℃ Storing
180℃ Storing
• Peel Strength of MLS
Target Strength0.15Kgf/mm2 = 1.5N/mm2
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 24
Type 1;□ 4mm Polyimide Pad on Ceramic Substrate
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
10 100 1000 10000Cycle (times)
Uni
t Stre
ngth
(Kg
f/mm
2)
0→196℃ Temp Cycle
• Peel Strength of MLS
Target Strength0.15Kgf/mm2 = 1.5N/mm2
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 25
Type 2; □4mm Copper Pad on Polyimide
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
10 100 1000 10000Cycle (times)
Uni
t Stre
ngth
(Kg
f/mm
2)
0→196℃ Temp Cycle
• Peel Strength of MLS
Target Strength
0.15Kgf/mm2 = 1.5N/mm2
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 26
Type 3; □4mm Copper Pad on Ceramic Substrate
0. 01. 0
2. 0
3. 0
4. 0
5. 0
6. 0
7. 0
8. 0
9. 0
10. 0
10 100 1000 10000Cycle (times)
Uni
t Stre
ngth
(Kg
f/mm
2)
0→196℃ Temp Cycle
• Peel Strength of MLS
Target Strength0.15Kgf/mm2 = 1.5N/mm2
Eval
uatio
n (M
echa
nica
l)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 27
• Joint Strength of Micro-cantilever on SubstrateHeater push
Polyimide
Micro-Cantilever
Ceramic Substrate
Copper Pad
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 30
•Electrical CharacteristicSignal propagation characteristics through 100mm MLS signal line
1.3GHz at –3dB decay
Eval
uatio
n (E
lect
rical
)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 31
電流印加連続TD接触抵抗OD=80μm
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Initial
100
200
300
400
500
600
700
800
clean
TD回数
接触抵抗[Ω
]
Recommended Cleaning Cycle
Contact Resistance vs TD
Eval
uatio
n (E
lect
rical
)
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 32
Future Work• Development for high speed and high
frequency signal propagation (>= 500MHz)
• Probe-cards for 12 inch full wafer contact testing
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 33
Conclusion• A probe-card for 8 inch-wafer full contact has been
completed and shipped with the structure consisting of; Micro-cantilevers, MLS and PWB.
• These are now being used in high volume manufacturing.• Fine Micro-cantilevers and thin-film processed MLS have
realized more than 6,000 contacts, with 100um pitch on a single probe-card.
• Design and manufacturing of a specialized MLS on a common ceramic substrate, and the combination of a common PWB realizes 6 weeks TAT for a completed probe-card.
• The evaluation results of several advanced probe-cards show excellent reliability and high frequency performance (up to 300MHz).
June 2005 SWTW 2005 A novel probe-card for 8 inch full wafer contact using MLS (Inoue/Megna) 34
Acknowledgements • Thanks to Yoshiei Hasegawa, the CEO of MJC for
his outstanding guidance and support of 8inch FWC probe-card development.
• Thanks to Hisatoshi Shirasaka and Shizuo Tsuiki for their long term efforts to establish fundamentals of photolithograph technology.
• Thanks to the members of Aomori Plant, MitakaLab., Ibaraki Technology Lab. and U.S. team for their collaboration to develop 8inch FWC probe-card.