a laser diode -p-ressure sensordfo-mpo.gc.ca/library/151718.pdf · amplitude noise of hlp 7801 g...

175
FINAL I REPORT DEVELOPMENT OF \ A LASER DIODE -P- RESSURE SENSOR (DSS FILE NO. 04SB-FP941-3-2262) SEPTEMBER 1985 !AKEM OCEArlOGRAPHYLTD SIDNEY, BRITISH COLUMBIA, CANADA

Upload: others

Post on 13-Jul-2020

4 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

FINAL I REPORT

DEVELOPMENT OF \ A LASER

DIODE -P-RESSURE SENSOR

(DSS FILE NO. 04SB-FP941-3-2262)

SEPTEMBER 1985

!AKEM OCEArlOGRAPHYLTD SIDNEY, BRITISH COLUMBIA, CANADA

Page 2: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 3: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 4: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

1.

2.

- ; -

TABLE OF CONTENTS

T ABLE OF CONTENTS

LIST OF FIGURES

LIST OF TABLES

INTRODUCTION

Review of Pressure Measurement Technologies

1.1 Principles of Pressure Measurement

1.2 Pressure Measuring Devices

1.2.1 Mechanical Elements

1.2.1.1 Elements Based on Gravitation

1.2.1.2 Elastic Elements

1.2.1.2.1 Bourdon Tubes

1.2.1.2.2 Diaphragm Elements

1.2.1.2.3 Bellow Elements

1.2.2 Electrical Pressure Transducers

1.2.2.1 Strain Gauges

1.2.2.2 Capacitive Pressure Transducer (BKS)

1.2.2.3 Piezoelectric Pressure Transducers

1.2.2.I.f Magnetic Pressure Transducer

1.2.2.5 Resistive Pressure Transducer

1.2.2.6 Other Electric Transducers (Paroscientific)

1.2.3 Other Transducers

1.3 References

filterferometers

2.1 General Properties of Light and Interferometers

2.1.1 Plane Waves, Photons and Light Intensity

2.1.2 Coherence of Light

2.1.3 General Properties of Interferometers

Page

;

iv vii 1

7 9

9

9

9

9

10

11

11 12

12 12

13 13

14

15 16

17

17 17

20 26

Page 5: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-i i-

TABLE OF CONTENTS (CONT'D)

Page

2.2 Two Beam Interferometers 35

2.3 Multi Beam Interferometers 38

2.11 References 43

3. Laser Diodes 44

3.1 Intrinsic Properties of Laser Diodes 44

3.1.1 Laser Diode Structure 44

3.1.2 Laser Emission 46

3.1.2.1 Intensity 46

3.1.2.2 Frequency and Wavelength 50

3.1.2.3 Polarisation 58

3.1.2.4 Angular Characteristic 60

3.1.2.5 Optical Power and Injection Current 60

3.1.2.6 Aging, Drift and Deterioration 63

3.1.2.7 Noise 63

3.2 Laser Diodes Under Optical Feedback 66

3.3 References 71

4. Experimental Bench Model Sensor 75 1.1

4.1 Design Considerations for the Bench Model Sensor 75

4.1.1 Operational Concept 75 i ! ,

lj..l.2 Key Parameters 77 t~--::

lj..2 Supporting Systems 78 r.' .. k.!

lj..2.1 Laboratory Characteristics 78 W

4.2.2 Visual Aids 78 I .

4.2.3 Pressure Simulation 79

4.2.lj. Current Source 81

4.2.5 Thermometry 81 I".:.:

G

lj..2.5.1 Thermocouple Approach 84

4.2.5.2 AD590 Electronic Thermometer 90

I ,

Page 6: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

5.

6.

-;;;-

TABLE OF CONTENTS (CONTD)

4.3 Measured Intrinsic Laser Diode Properties

4.3.1 Experimental Setup

Page

92

92

4.3.2 Voltage Drop, Optical Power and Noise vs. Drive Current 96

4.3.2 • .1 Mitsubishi ML 4102 96

4.3.2.2 Hitachi HL 780 I G 96

4.3.2.3 Ortel LDS3-H 98

4.3.3 Optical Power vs. Time: Drift and Noise 103

4.3.4 Optical Power and Temperature 103

4.3.5 Summary of Laser Diode Performance 106

4.4 Measured Properties of Laser Diode Bench Model Sensor 108

4.4.1 Optical Power vs. Displacement: L(d)r; Calibration Curve 110

4.4.2 Optical Power vs. Drive Current: L(I)d 117

4.4.3 Influence of Mirror Reflectivity and Reflector Geometry 124

4.5 Demonstration Sensor 125

4.6 Summary of Tests 127

4.7 References 129

Alternative Approaches

5.1 Alternative Operational Concepts and Devices

5.2 References

Conclusion

130

130

132

133

7. Appendices

A: Sensor Output Forms for Displacement, Between d=IO\l17) 135

and d= !.25mm

B: Sensor Output as Function of Drive Current. 147

C: Manufacturers Test Data of ML 4102, HL 780lG and LDS3-H. 156

D: Properties of CW - Ga Al As Lasers 161

Page 7: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-iv-

LIST OF FIGURES

INTRODUCTION

Fig. 0-1

Fig. 0-2

CHAPTER 2

Fig. 2.1-1

Fig. 2.1-2

Fig. 2.1-3

Fig. 2.1-4

Fig. 2.1-5

Fig. 2.1-6

Fig. 2.1-7

Fig. 2.2-1

Fig. 2.2-2

Fig. 2.3-1

Fig. 2.3-2

Fig. 2.3-3

Fig. 2.3-4

CHAPTER 3

Fig. 3.1-1

Fig. 3.1-2

Fig. 3.1-3

Fig. 3.1-4

Fig. 3.1-5

Fig. 3.1-6

Fig. 3.1-7

Schematic Diagram of Laser Diode Sensor

Schematic Diagram of Laser Diode Membrane Type Pressure

Sensor

Light Described as Wave of an Electric Field

Coherence of Light

Spatial Coherence of Light

Interference of Two Beams of Equal Amplitude

Interference of Two Beams of Equal Intensity - Intensity

Variation with Phase Angle.

The Fringe Problem

Calibration Curve l (L1 Cf ) Conventional Set Up of a Michelson Interferometer

Michelson Interferometer for High Mechancial Stability

Improvement

Reflection of a Plane Wave in a Plane Parallel Plate

Formation of Multiple-Beam Fringes

Multiple Beam Fringes in Transmission

Light Rays for Multiple Beam Interference in the Set Up of -

the Laser Diode Sensor

Typical DH - Laser Diode Structure

Definition of Threshold Current and External Quantum

Efficiency

Dependence of Thermal Conductivity on AI Mole Fraction

Frequency Bandwidths of Semiconductor Lasers

High Resolution CW Spectrum of a Ga As Laser

Energy Shift Among Laser Modes

Typical Spectra for Index Guided and Gain Guided Lasers

2

2

18 21

23 27

29

31

33 36 37

38 39

39

42

45 48

51

52 52 55

56

! I .

Page 8: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-v-

LIST OF FIGURES (cont'd)

Page

Fig. 3.1-& Wavelength Hysteresis Effect 57 Fig. 3.1-9 Polarization of Laser Diode Output at Different Current 59

Levels

Fig. 3.1-10 Polarizaton of Three Adjacent Longitudinal Modes 59

Fig. 3.1-11 Far Field Laser Beam Divergence for Index Guided Laser 61

Fig. 3.1-12 Far Field Laser Beam Divergence for Gain Guided Laser 61 Fig. 3.1-13 Power /Injection Current Characteristics for Index and Gain 62

Guided Lasers

Fig. 3.1-11j. Power Loss of Laser Diodes Over Time 64

Fig. 3.1-15 Noise of Laser Diodes as Function of Current and Frequency 64

Fig. 3.2-1 Changes of Laser Characteristics Under Feedback: 69

Hysteresis, Wavelength Shift and Undulation

Fig. 3.2-2 Changes of Laser Characteristics Under Feedback: 70

Transient Response, Line Broadening and Required Output

Form for Laser Diode Sensor.

CHAPTER Ij.

Fig. 1j..2-1 Block Diagram of the Optical Feedback Laser Diode Bench 76 Model Sensor

Fig. 1j..2-2 Hysteresis and Displacement of Stacked PZT - Piezoelectric 80 Pusher ~Burleigh PZIj.O)

Fig. 1j..2-3 Circuit Diagram of Laser Diode Constant Current Source 82 Fig. 1j..2-1j. Block Diagram for Temperature Measurement on Laser 85

Diodes with Thermocouples and Temperature Control

Fig. 1j..2-5 Circuit Diagram for Thermocouple Amplifier 86 Fig. 1j..2-6 Circuit Diagram and Layout for Peltier Element Driver 87. 88 Fig. 1j..2-7 Circuit Diagram for AD 590 Electronic Thermometer 89 Fig. 1j..2-& Thermocouple - and AD 590 Thermometers 91 Fig. 1j..3-1 Circuit for Measurements with ML Ij.l02 Laser 93 Fig. 1j..3-2 Variable Bias Source for Noise and Temperature Drift 95

Measurements

Page 9: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-vi-

LIST OF FIGURES (cont'd)

Page

Fig. 4.3-3 Voltage-Current Characteristics, Optical Power and 97

Amplitude Noise of ML 4102 Laser Diode l.."_:

Fig. 4.3-4 Voltage-Current Characteristics,Optical Power and 99

Amplitude Noise of HLP 7801 G Laser Diode ! .

Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode 100

Fig. 4.3-6 Amplitude Noise and Drift of ML 4102 Laser Diode 101 i

Fig. 4.3-7 Thermal Drift of ML 4102 Laser Diode 102 t Fig. 4.3-8 AD 590 Thermometer Head Bonded to Laser Diode Heat 104

Sink l" Fig. 4.3-9 Correlation of Temperature Changes and Optial Output 105

Power for HLP 780 I GLaser

Fig. 4.4-1 Experimental Set Up for Laser Diode Bench Model Sensor 109

Fig. 4.4-2 Experimental Bench Model: Set Up and Details of Laser 111

Diode Interferometer

Fig. 4.4-3 Bench Model Sensor Output (Fringes) 112 i

Fig. 4.4-4 Declining Fringe Size with Distance 114 I Fig. 4.4-5 Noise Limited Displacement Resolution of 2x10-12 m 114 I .

Fig. 4.4-6 Envelopes for Max and Min of Fringe Signals 115 I Fig. 4.4-7 Fringe Modulation vs. Large Mirror Displacement 116

1 1

Fig. 4.4-8 Fringe ~odulation vs. Mirror Displacement for Four Laser 118 I Currents (Tracking Range)

Fig. 4.4-9 Fringe Modulation vs. Mirror Displacement for Four Laser 119 [ to-:..-

Currents Outside Useful Tracking Range

Fig. 4.4-10 Power/Current Characteristic for Bench Model Sensor for 120 i I· 1

Fringe Maxima and Minima

Fig. 4.4-11 Largest Possible Output for Bench Model Sensor 121 i Constructed From Threshold Shift b

Fig. 4.4-12 Details of Fringe Top at I = 19.2 rnA 123

Fig. 4.5-1 Laser Diode Interferometric Module in Demonstration 126

Pressure Sensor

Fig. 4.6-1 Parameters Governing Sensor Calibration Curve 1I L (d) 128

t~ I'.' . ~ ," ..

Page 10: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

Table 2.1-1

Table 4.2-1

Table 4.3-1

Appendix D

-vii-

LIST OF TABLES

Temporal Coherence of Radiation Sources

Comparison of Thermometer Properties

Data of Laser Diode Performance

Properties of CW - Ga Al As Lasers

25

83

107

161

Page 11: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

.:;.-

I I

~;~ ..

Page 12: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 1 -

INTRODUCTION

Since the first recorded measurement of barometric pressure by Torricelli

1643 with a fixed cistern mercury instrument the need to measure pressure in a large

variety of applications has led to a highly specialized and refined field within

metrology and instrument technology. Partial pressure of 10-16 bar are measured by

commercial inverted magnetron masspectrometers and experimental situations for

the fusion of atoms require pressures counted by megabars. Within this range of over

22 orders of magnitude new applications demand for still higher resolution and larger

accuracy and thus require a fresh and innovative approach.

This report summarizes the development work for a novel interferometric

pressure sensor, proposed by SEAKEM OCEANOGRAPHY LTD (1) with applications

for physical oceanography in mind. Pressure measurements of high resolution and

accuracy are needed here in conjunction with temperature and salinity measurements

to derive reliable water density. Other typical applications include depth meters in

submersibles, tide gauges and wave height meters.

The basic sensor scheme utilizes the back refletion from an external mirror

into a laser diode (Fig. 0-0 to modulate its power output, which is detected by a

photodiode. This scheme has been reported as early as 1976 for sensor applications

and investigated as acoustic sensor in 1980 (2) and since suggested also for

measurment of other excitations (3) (4). Detailed information on these sensors is not

provided, they reached however a vibrational displacement resolution of"'9 X 10-14

m (corresponding to a phase shift of about 7 X 10-7 rad) observed at a favourable

frequency of > 1 KHz and possibly using lock-in techniques for noise reduction.

Published signal forms show a ripple of about 1 % and consist of non-monotonous,

asymetric fringes with sharp, unsteady changes at displacement intervals of half the

wavelength of light. For best signal modulation the laser was operated close to

threshold and therefore using only partly the full power of the laser.

The proposed pressure sensor is in its operational concept an electro-optical

transducer, where the pressure sensing element is formed by an elastic membrane

(Figure 0-2). The membrane position is read by remote sensing from a miniature

semiconductor laser using an interference technique: one of the two laser mirrors

("facets") is also used as a beam splitter, (BS, Fig, 0-0 which permits part of the

light, "T", to pass to reach the reflecting membrane and to return to the laser ("signal

wave" S). The other part of the light which is reflected back into the laser medium

acts as reference wave and interferes here with the signal wave. The phase

Page 13: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 2 -

LASER DIODE

~ ~ ~) EXTERNAL

PHOTO- R+S R+S R~'; REFLECTOR DETECTOR ~ ...:A- I;)

S ~ ~S

BS • • VARIABLE POSITION

Fig. 0-1 Schematic diagram of laser diode displacement sensor. BS: beam splitter; R: reference wave; S: signal wave.

I

I

EJ I.e.

M

Fig. 0-2 Schematic diagram of laser diode membrane type pressure sensor: M: membrane; R: reflector; LO: laser diode; PO: photodiode.

Page 14: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 3 -

difference between reference and signal wave is proportional to the distance of the

external reflector from the laser facet and provides an amplitude modulation of the

laser beam, which can be calibrated against pressure. The construction of such a

calibration curve leads to problems for interferometers if the mirror travels

distances larger than one quarter of the wavelength of light. This problem,

sometimes referred to as fringe counting, requires ;l.n electronic memory for the

sensor to remember its absolute calibration, which is unacceptable for a precision

field instrument. A novel simple technique is proposed here and partly developed

which makes the electronic memory unnecessary and interferometric devices in

general more practical. This method is described in more detail in 2.1.3 "General

Properties of Interferometers" and in 4.4 "Measured Properties of Laser Diode Bench

Model Sensor". Following conventional interferometer designs (6) a sensor would

require several additional components such as beam splitters and 1/4 wave plates and

therefore measure several centimeters. The careful analysis of the basics of

interferometers however, led also here to practical solutions and opens for the first

time the doors for the development of a truly small size complete interferometer,

which can be as small as 3 X 3 mm 2 with an estimated resolution exceeding 10-12 m

and the possibility of covering with several dozen fringes a displacement range of

about 10-4 m.

With typical dimensions of fractions of one mm for the laser chip itself, low

power consumption of less than 100 mW under contino us operation and the need for

only two additional components, - an external mirror membrane and a miniature

photodiode - the sys!em offers itself for applications where dimensions, weight and

controlled operating power become determining factors, like for the application in

remote instruments, self-sufficient oceanographic stations or moored buoys.

While proven suitable for dynamic applications the concept of the optical

feedback laser diode pressure sensor -- short OFS - has to be tested and developed

here for a static pressure sensor system where the concern for long term stability and

drift becomes dominant over frequency response and short term stability. Such a

sensor has to meet and beat the performance of existing devices, as for example

manufactured by Paroscientific Ltd. (5)

The goal which the development of the OFS is aimed at can be characterized

by the following specifications:

Page 15: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

resolution:

accuracy:

stability/drift:

recalibration:

time response:

storage temperature:

operational temperature

error due to temperature:

pressure ranges:

or:

or:

possibility of battery operation

extreme rigidness

compactness

- 4 -

10-lf to 10-6

10-lf

10-8/h (over 3 months)

after 10lfh (1 year)

1O-2s to 1 s

-lfO to +lfOoC

-2 to +300

10-3 (at -lfOoC) of full scale

1 atm + 30%

600 atm

0-1 atm

These specifications are somewhat flexible as a developmental goal. Resolu­

tion, stability and accuracy give a realistic estimate for the expected performance of

the new sensor. Laser based interferometric laboratory devices exceeding these

specifications are used in standards for time and length measurement, indicating the

usefulness of the interferometric principle for high precision instruments.

While the reduction of parts required for the sensor head to only three

components (photodiode, laser, external mirror) permits many favourable features as

size and thermal and mechanical stability of the sensor, it leads to the usage of

components for more than one function in the sensor and the sensor components

become highly coupled.' The design of such a system requires therefore a much

deeper understanding of intrinsic components as well as the integrated sensor system

than required for the traditional design of systems composed of isolated components.

This and the specifications require the careful selection "of materials,

components and operation techniques in order to develop the sensor system. The first

part of this report reviews existing pressure measuring techniques, identifies success­

ful materials and approaches, while the following part reviews those basic principles

; .

!

'---~ --

Page 16: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 5 -

of interferometric devices and lasers which allow the identification of operational

and design parameters and their useful range. An experimental bench model OFS is

designed and built as well as support systems providing electrical and mechanical

isolation from the environment, "noise" free electrical power and high resolution

temperature measurement. Measurements are carried out to determine resolution,

thermal impact and stability of the OFS, to optimize the output and determine the

range. Measurements show that short term resolution can exceed the specifications

and a range exceeding 4 orders of magnitude could be therefore achieved. Long term

stability measurements were unsuccessful due to experimental difficulties, as will be

discussed. A model sensor has been built to test assembling techniques and miniature

components on a scale, which represents dimensions of a field pressure sensor. The

final conclusion section summarizes the experience gained, possible applications of

the OFS, its strongholds and weaknesses as they present themselves to date.

This report has been written with the intent to provide enough details in both

theoretical background and experimental techniques to permit design and construc­

tion of a highly integrated prototype sensor system.

Page 17: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 6 -

REFERENCES

1. "Development of a Laser Diode Pressure Sensor" -- An Unsolicited Proposal submitted to the Department of Supply and Services Canada, Hull-Quebec, by SEAKEM OCEANOGRAPHY LTD., 2045 Mills Road, Sidney B.C. V8L 3SI, April 1983.

2. A. Dandridge, R.O. Miles, T .G. Giallorenzi, Electr. Lett. 16, 25 (1980) 948.

3. "Diode Laser Senses Physical Changes" - "Patents" in "Lasers and Applications" 4, 5 (1985) p. 225-226.

4.

5.

A. Dandridge, R.O. Miles, A.B. Tveten, T .G. Giallorenzi, Proc. European Conf. Integrated Optics, London, 1981, p. 110.

R.B. Wearn, N.G. Larson. "The Paroscientific Pressure Transducer --Measurement of its Sensitivities and Drift", Applied Physics Laboratory -University of Washington, Report APL-UW 8011, Aug. 1980.

6. J.P. Legendre, "Displacement Measurement with a Michelson Type Interferometer", National Research Council of Canada, Div. Electrical Engineering, Report No. ERB 939, NRCC No. 19829, Nov. 1981.

I I ' ,--"

Page 18: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 7 -

1. REVIEW OF PRESSURE MEASUREMENT TECHNOLOGIES

Objective:

The following chapter reviews principles and technologies presently used for

pressure measurement, and identifies weaknesses and limitations as well as materials

and techniques useful to be considered in a new sensor.

Vacuum technology will be mentioned briefly, where principles may be

transferred to instruments working at higher pressures.

This chapter consists in parts of a review by G.C. Zoerb (1).

-1.1 Principles of Pressure Measurement

The definition of "pressure" as "force per area unit" (or equivalently the

change of momentum per time and area element) is applied to the solid, liquid and

gas phase. Pressure is measured as a difference to a reference point; with reference

to absolute zero "absolute" or "total presure" is measured. With reference to the

variable atmospheric (barometric) pressure "gauge pressure" indicates pressure above

and "vacuum" indicates pressure below atmospheric pressure. The atmospheric

pressure is not constant, but varies with elevation, latitude and also with time and

temperature. Another reference point, the "standard atmospheric pressure" defined

as 1 bar= 750 Torr is used frequently in technical applications.

Although legally pressure is measured in "pascal" in agreement with the

internationally accepted 51-system, for practical and historical reasons the units (bar)

and (Torr) or (mm Hg) are still frequently encountered.

1 pascal = I N/m-2

I bar = 105 pascal = 750.062 Torr = 750.062 mm Hg

Devices for measuring pressure range from very simple liquid filled U-tube

manometers to intricate electrical pressure measuring systems. In general, liquid

manometers, Bourdon tubes or other mechanical pressure measuring elements are

used when a static (or steady) pressure is determined. For dynamic pressure or when

remote reading is desired a pressure transducer with associated electronic equipment

is used. A transducer is defined as a device which converts one energy form

proportionally into an other energy form as for example mechanical energy being

converted into electrical energy. Transducers are convenient for data processing

Page 19: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 8 -

and read out in pressure sensor systems. At various times transducers have been

called "pick ups" and "sensing elements".

To measure means "to compare an unknown quantity to a known reference

(2)" and an accurate measurement depends much on properties and quality of this

reference source. The implementation of the reference source forms the physical

principle of the device, while all subsequent functions serve data acquisition,

processing and display. It is through these latter functions that many devices become

transducers.

The majority of the mechanical pressure elements construct their reference

from two of the three (only) mechanical forces: il inertial force (or weight) is used in

liquid manometers and the free piston type instruments. The most common liquid is

pure mercury, which has a high density (g :0 13.5951 g/cm3). A column of 760

mm will subject to an acceleration due to gravity of 9.80665 m/s2 - exert a pressure

of 1 atm = 1.01325 bar (exact). iil elastic force (Hook's law) is used in membrane and

Bourdon tube type pressure gauges. iii) Pressure gauges using frictional force are not

in wide use, appear however being applied in vacuum technology (3).

In addition to the forementioned principles we find in vacuum technology

gauges depending on the transport of heat (and mass) or electrical charge, which can

be calibrated for specific gases into pressure readings. Although reliability and

accuracy of these devices is only marginal they do presently represent the best

approach for the vacuum regime.

While the potential limit of accuracy of the device depends on the properties

of the reference pressure the resolution is both a property of reference source and

read out system. For a mercury column 'of densitY!i = 13.5951 g/cm 3 and an

(assumed) acceleration of g = 9.80665 m/s2 accuracy and resolution implied by these

numbers is about 10-5. The practical limit will likely be less, due to impurities of the

mercury, thermal effects, knowledge of the local gravitational constant g and effects

of the readout and display system. Mercury columns are used as standards for

pressure up to about 4 bar with an accuracy of 10-4 and are used in the form of the

McLeod gauge for vacuum to 10-4 Torr with an accuracy of about 10-2 for the upper

and 10-1 for the lower pressure range.

I

I I

I •• '

Page 20: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 9 -

1.2 Pressure Measuring Devices

1.2.1 Mechanical Elements

1.2.1.1 Elements Based on Gravitation

The long list of purely mechanical pressure gauges based on gravitation as

reference includes the liquid column types: fixed-cistern barometer, U-tubes for

absolute pressure or pressure differences, well type manometer, inclined tube

manometer, ring-balance manometers and bell gauges. The dead weight tester (or

piston gauge) utilizes known masses placed on a free moving piston of known area to

provide a pressure reference and is used as a standard for pressures up to and above

7000 bar. Typical accuracy is 10-3 to 1 O-~ of full span.

Various readout and display systems have been devised (1) to increase the

sensitivity of the sensing element and utilize the potential of accuracy and resolution

of the applied method discussed above. The instrument sensitivity defined as

instrument response to the excitation pressure is characterized by the ratio of output

signal and sighal pressure. Different systems use laser systems, balances, optical,

acoustical, electro-optical and electromagnetic principles to increase the readout

accuracy of columns to about 0.05 mm and use the devices as sensor heads for remote

data processing (transducers).

1.2.1.2 Elastic Elements

Pressure devices based on elastic elements may be classified into three

categories: Bourdon tubes, metallic diaphragms and bellows.

1.2.1.2.1 Bourdon Tubes

Bourdon tubes are among the most commonly used elements and were

patented 18~9 by Eugene Bourdon. The element consists of an oval or flattened shape

tube, which becomes circular when pressure is applied. Different geometrical

configurations of the tubes are used to provide sufficient pointer movement without

gear trains. Typical applications are pressure ranges between 0-1 bar and 0-3500 bar;

instruments for 0-7000 bar are available. Precision gauges reach accuracies of 10-3

Page 21: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 10 -

to 5 X 10-3 of full scale readings.

Accuracy is classified by the American National Standards Institute (ANSI) by

the following grades:

AA for test gauges with an error less than 1/2% of the graduated scale

A

B

for high grade commercial gauges with an error smaller than 1% of the

scale range within the middle half of the scale and I 1/2% along the

rest of the scale

for commerical grade gauges, where the error must not exceed 2% of

the scale range within the middle half of the scale and 3% along the

rest of the scale

Precision Bourdon gauges are compensated for temperature effects. Most

frequent failures are due to wear of the linkage system which am plifies the tube

movement and thereby increases the overall sensitivity of the instrument.

1.2.1.2.2 Diaphragm Element

Metallic diaphragms are used for measuring relatively low pressures.

Diaphragms may be flat or corrugated disks. The corrugated diaphragms are used in

larger diameters than the flat disks and thus produce greater linear deflections at

lower stress. Larger size and lower stress, however, reduce dynamic response. When

two corrugated discs are joined together at the outer edge the units are referred to

as a capsule, which -.: evacuated -- are used widely in aneroid barometers.

Non-metallic (or: non-elastic) diaphragms are used for measurement of low

pressure or vacuum. The very flexible diaphragms are made from leather, neoprene,

polyethylene, teflon or silk and the reference pressure is generated by a spring.

Devices are available for ranges 0 - I X 10-5 bar to 0 - 0.3 bar gauge pressure.

Flat metal diaphragms are used among others in strain gauge transducers and

capacitance transducers. The ranges covered here in vacuum are (II) 10-3 bar full

scale to about 10 bar ~ full scale with the ability to measure absolute values

approaching 1.3 X 10-8 bar. Under these conditions a 1 Torr - full scale membrane

moves approximately 10-11 m for the resolution limit.

Error sources in connection with diaphragm pressure elements are hysteresis,

non-linearity, and temperature effects. The prestressed (or tensioned) metal

r·, ~.- _.

,

i

!

k

diaphragm shows little inherent hysteresis, is however dependent on the process of f'¥

Page 22: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 11 -

stretching and tensioning. Hysteresis accounts for less than 10-2% of the reading

error of the instruments. Apart from temperature effects non-linearity accounts for

larger parts of the total error. (For a complete vacuum instrument including

electronics non-linearities may contribute 80% to the total error.)

Fundamental to the design of diaphragm type sensors is the selection of

materials which have an optimum of both thermal coefficients and media compati­

bility and Inconel is frequently chosen 0). Temperature effects both the zero

calibration and the span (range) calibration for the instrument. Properly designed

sensors show an "uncontrolled" zero point drift coefficient in the order of 2 X 10-2%

of full scale per oC and a span coefficient of 6 X 10-2% of reading per oC. By

temperature control these coefficients can be reduced by a factor 10-100. Total

error for present technology is between 5 X 10-2 and 3% of reading ~ zero and span

coefficient (for MKS Baratron gauges). It is expec~ed that the measuring capabilities

of diaphragm (capacitative) instruments can be extended to 10-10 bar at the low end

and 70 bar at the high end.

1.2.1.2.3 Bellow Elements

Metallic bellows are made from a piece of seamless tube into a one-piece

expansible or collapsible member. The axial movement - frequently amplified by a

linkage system - is used to indicate pressure. Typical application spans are from 3

bar to about 5 bar. The axial bellow stroke is approximately 5 to 10% of the length.

Hysteresis and zero slrift problems are more prevalent with this element than with

Bourdon tube and flat diaphragm. Materials are brass, phosphor bronze, stainless

steel, Monel or beryllium copper.

1.2.2 Electrical Pressure Transducer

The potential for compactness, dynamic properties and convenience of data

processing have made the combination of elastic elements and remote electrical

readout systems very attractive. The mechanical signal is here transformed into a

convenient form by one of the following means:

i) strain gauges

ii) ca paci ti ve

iii) piezoelectric

Page 23: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 12 -

iv) magnetic (inductance or reluctance)

v} resistive; moving contact

vi) others

1.2.2.1 Strain Gauges

Since its introduction in 191j.0 electric strain gauges have become the most

important transducers for the measurement of pressure and other variables. Within

the group of bonded strain gauges presently metal gauges and piezoresistive semi­

conductor gauges are distinguished with different sensitivities: the gauge factor -

defined as unit change in resistance per unit change in strain - is for a wire or foil

gauge 2, but exceeds 120 for semi-conductor gauges. Bonded strain gauges find

applications including in flat metal diaphragm pressure transducers, piston type

pressure cells, Bourdon tube and bellow pressure transducers. Devices can be built

with high frequency response and for high pressures up to 3500 bar.

A large variety of unbonded strain gauges is on the market, including wire

type, wire with dc-differential amplifier module and semi-conductor strain gauges.

1.2.2. 2 Capacitive Pressure Transducer

Capacitive type pressure transducer normally consist of a metallic diaphragm

between two volumes. Stationary plates are placed at each side of the diaphragm. A

pressure difference will decrease the capacity to one plate and increase it to the

others. Change in capacitance is sensed by an 10KHz AC signal across the plates.

Small size, high dynamic response, high temperature resistance and good linearity and

resolution are major advantages. Disadvantages are thermal drift, sensitivity to

vibration and the necessity for relatively complex electronics. Differential pressure

as low as 10-8 bar can be sensed.

Capacitive pressure transducers resemble in mechanical design and functions

of the components very much the laser diode sensor discussed in this report.

1.2.2.3 Piezoelectric Pressure Transducer

In most transducers the piezoelectric material is in direct contact with a flat

metallic membrane, which deflects under pressure load. The piezo material is backed

I

I I·

,. i

i.

, .. i

Page 24: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 13 -

by solid material, so that the reference pressure is determined by the elastic

properites of membrane and piezo element. Several natural materials exhibit an

piezo electric effect, including the crystals quartz and tourmaline. Rochelle salt and

ADP are grown artifically. Certain ceramics can be produced to exhibit piezoelectri­

city, which they lose at temperatures above their "Curie point". For the most

common ceramics, barium titanate and lead zirconate-titanate (PZT) these tempera­

tures are about 1500C and 4000C. Main advantage are good frequency response and

reproducability if temperature is controlled. Disadvantages are sensitivity to

temperature and "electric noise" environments due to high electric impedance. The

latter makes the transducer unfit for static applications.

1.2.2.4 Magnetic Pressure Transducer

Two classes can be distinguished: those, whose operation is based on a change

of inductance and those, that depend on the change of reluctance of a part of the

magnetic circuit. The electic circuits are low impedence circuits, capable for high

currents. Sensing elements are diaphragm, bellows, Bourdon tube and U-tube.

Inductance type transducers are frequently of the linear variable differential

transformer type which basically measures small displacements. The full range

deflection of the diaphragm may be as small as 100 /"'" • Small volume changes due

to membrane flexing and no frictional load on the membrane are major advantages,

as well as small size and possibility to operate off 60 Hz power supplies.

Reluctance type pressure transducers use frequently diaphragm or Bourdon

elements. Typical pressure ranges are 0 - 10-2 bar to 0 - 350 bar at medium

frequency response (50 - 5000 Hz).

1.2.2.5 Resistive Pressure Transducers

Transducers of this category include pressure sensitive wires, carbon pile

pressure transducers and moving contact transducers. The latter consists usually of a

mechanical sensing device and a lever system which moves a contact point over a

distributed resistor made from wire, carbon film or conductive plastic.

A pressure transducer based on the pressure (or force) proportional change of

material resistance has been described 1957 (5). The principle of operation reminds

on the early carbon microphones, where pressure waves change the contact between

carbon particles and thus change the bulk conductivity. In the forementioned

Page 25: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 14 -

instrument a mixture of rare earths is processed to produce a pressure sensitive

material, which is made to form wafers with contact surfaces on each side. Pressure

variation can be measured directly with an ohm meter since the change in resistivity

with pressure is high.

1.2.2.6 Other Electric Transducers (Paroscientific)

Another unique method relies on the change of the natural vibration

frequency of an elastic resonator under stress. Wires under tension and a quartz

string under compression have been used. The devices are "inherently digital"

because they produce changes in digital patterns portional to pressure and a brief

review on technology is given in (6).

The Paroscientific pressure sensor employs a quartz crystal, which changes

its resonant frequency under compression and gives a digital readout. The vacuum in

the pressure capsule provides the reference state for absolute measurements.

Advantages of this device are digital output, accuracy comparable to primary

standards, insensitivity to environmental factors, minimum size, weight and power

consumption and good utility of the readout.

These transducers have achieved remarkable performance. Available ranges

are between 0 - I bar and 0 - 690 bar. The quartz crystal oscillates at ~O KHz

without stress and the frequency drops to 36 KHz under fuJI range condition. Key

point for the success of this sensor is the construction of a high-Q resonator providing

a small bandwidth in the oscillator spectrum. The Q claimed is in the order of ~OOOO.

The calibration equation used to relate pressure to frequency proved accurate within

70 to 100 X 10-6 of the sensors full scale pressure (7) at a single temperature within

the range -50C to + 300C; Resolution of 3 X 10-6 of full scale pressure as claimed by

the manufacturer may be conservative (7). Hysteresis varies but is under 70 X 10-6

of full scale pressure and temperature effects are smaller than 175 X 10-6% full

scale pressure. The sensor is widely used in oceanographic applications, and was

extensively tested (7).

I 1-. ~.: .:

I

[

L.:.

Page 26: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 15 -

1.2.3 Other Transducers

Many other pressure transducers have been described in the literature and

only few will be highlighted here.

A device known as hypsometer is used for indirect pressure metering and

measures the changes of the boiling temperature of a liquid in equilibrium with its

vapour for changing pressure. Equilibrium temperature and pressure of the vapor­

liquid system are directly related and accuracy and speed of response are limited only

by the temperature sensing means. As altimeter the hypsometer is proven superior to

aneroid instruments and sensitive enough to resolve 1/3 m altitude (3 X 10-5 bar).

Other optical transducers seem possible. A review of the literature (8)

produces however only devices with a purely "dynamic" response (acoustic sensors,

hydrophones) with excellent sensitivities. Another group of optical sensors with

related properties are accelerometers, which are based on the displacement of a mass

due to acceleration and an elastic force serves as reference source. At least four

different readout principles are used: Mach Zehnder interferometer (9), (10),

Michelson interferometer (11), (16) and simple intensity modulation by the relative

position of two apertures (14, (18) ("optical lever"). All these instruments are applied

to dynamic acceleration measurements.

A noteworthy intensity readout system using bulk components is described as

ear Iy as 1959 (17) and reached outstanding resolution with a conventional

incandescent light source: the change of 10-10 rad of a mirror orientation has been

resolved with a response time of 0.25 s. The device has been used to detect changes

in the refractive index of a gas of 10-9, measurements of velocity as low as 30

14"" {year and "it appears that a displacement of 10-14 could be detected."

The piezo-optical effect has been used to encode pressure - or force -

information on light (15), (16), (19). Similar to the piezo-electric effect also the

piezo-optical effect is relatively temperature sensitive. This indicates that the

thermal (lattice) vibrations within the crystal or molecular structure of the material

reach dimensional changes, which can be compared with the changes caused by

pressure or optical stimulation.

Page 27: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 16 -

1.3 REFERENCES

1. G.C. Zoerb "Pressure and Vacuum" in "Instrumentation and Measure­ment for Environmental Sciences", 2nd Edition, Bailey W. Mitchel ed., ASAE, St. Joseph, Michigan 49085, 1983. Special Publication 13-82.

2. Private communication, Dr. Telle, Lab 1.22 "Physikalisch Technische Bundesanstalt", D-33 Braunschweig, West Germany.

3. Mentioned as "Spinning Rotor Friction Gauge" in catalog "Measurement &: Control", MKS Instruments, Inc, Barlington MA 01803.

4. J.J. Sullivan, "Modern Capacitance Manometers", Transducer Technology, July! Aug. (1979) 22.

5. O.B. Clark, Prod. Engineering 28, 10 (1957), 106-109.

6. J.M. Paros, "Digital Pressure Transducer", Measurement and Data 56: 10, 2 (1976)

7. R.B. Wearn, N.G. Larson "The Paroscientific Pressure Transducer -Measurement of its Sensitivities and Drift". Applied Physics Laboratory -University of Washington, APL-UW 8011, August 1980.

8. T .G. Giallorenzi et al. IEEE QE 18, 4(1982) 626.

9. A.B. Tveten et al, Electr. Lett 16, 22 (1980) 854.

10. A.D. Kersey, D.A. Jackson, M. Corke, Electr. Lett. 18, 13 (1982), 561.

11. A.D. Kersey, D.A. Jackson, M. Corke, Opt. Com. 45, 2(1983), 71.

12. A. Dandridge, A.B. Tveten, Journ. Lightwave Techn., Vol. L T -2, (1984) 73.

13. T. Shuidri, K. Kyuma, M. Nunoshito, Appl. Opt. 22,11(1983) 1771.

14. G.A. Rines, Appl. Opt. 20, 19(1981),3453.

15. W.B. Spillman, Appl. Opt. 21, 15(1982),2653.

16. D.A. Jackson, A.D. Kersey, M. Corke, Electr. Lett. 18,5(1982),227.

17. R.V. Jones, J.C.S. Richards, J. Sci. Instr. 36 (1959) 90.

2

18. R.O. Cook, C.W. Hamm, A. Akay, J. Sound and Vibration 76, 3(198Il, 443.

19. W.B. Spillman, D.H. McMahon, Appl. Opt. 21 (I9) (I982), 3511.

i,

i ..

I i L:-,

)'.: ~ .. -, I· l:::.:

i

,

I

Page 28: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 17 -

2. INTERFEROMETERS

The review of pressure measuring instruments in the last chapter revealed

that some instruments under development use an optical transducer step between the

sensing element and the final electric readout unit. Some of these instruments use

interferometers which, because of their capability of high resolution and accuracy

are· also used for precise time and length standards. The following chapter will

review some properties of these instruments before their application in an extremely

compact variation - the laser diode sensor - is discussed for pressure measurement.

Objective:

A review of the principles of operation of dual beam and multiple beam interfero­

meters identifies components and their functions as well as the control parameters

necessary for the design and operation of the compact laser diode interferometric

sensor.

2.1 General Properties of Light and Interferometers

2.1.1 Properties gf Plane Waves, Photons and Light Intensity

It is customary. in optics to describe the properties of electromagnetic

radiation simplified either as "photon" particles or as "waves". The physical

properties of the latter can be acurately described by sin or cos functions of the

electric field; for mathematical convenience however they are described by a vector

function with complex amplitude where the real (or imaginary) part is only considered

of physical significance. A plane wave is illustrated in Figure 2.1-1.

The mathematical representation for a plane wave travelling in positive x

direction is given by

-'"

£(x,t) - E .. (2.1-1)

Page 29: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 18 -

-y:

~ -F

Fig. 2.1-1 Light described as wave of an electric field. Eo: constant maximum amplitude, A: wave length

a) polarization in y - direction b) polarization in y-~ plane

!'o.

, .

I. ''':'''.',

I

I

I l i I L._

Page 30: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 19 -

-The scalar part of Eo describes a space and time independent, constant amplitude maximum of the electric field !lnd the vector gives the direction of polarization (here in the y-z plane). The exponential part describes the phase of the

wave. The first exponential term describes the propagation direction of the wave • ... The propagation vector k gives the direction relative to the coordinate system

represented by x. The length of the propagation vector j'k I = k is the wave number

k= 2Tr/~. The second exponential term describes the oscillation frequency W = 211:"

or propagation velocity c of the wave, related through c =i\." where c is the vacuum

speed of light. For media other than vacuum the speed is reduced by the index of

refraction n to v = c/n. The first two terms describe the time and space dependent

phase of the wave. The last term introduces a time and space independent phase 'f with respect to the origin as reference.

It is easy to see the various properties of a travelling wave described by this

relationship: "to describes the maximum amplitude and polarization of the wave, the

first exponential term the spatial variation of this maximum amplitude, the second

term the time variation of the amplitude for a fixed location and the final term an

initial phase or the phase relative to another wave.

The intensity "I" of light is defined as the time average of the amount of

energy crossing per unit time a unit area perpendicular to its flow. The average -< E2 > is used for el:ctromagnetic waves to measure this intensity (I), where only

the real parts of the wave functions are taken. For optical frequencies oscillations of

the electric field vector can not be resolved in contrast to radio frequencies and the

detector averages over times long compared to a period giving

(2.1-2)

where the latter applies to plane waves. It is customary to drop the factor 1/2 and

refer to

I

as intensity. Optical radiation detectors - as the eye, photodiodes or photographic

plates - are intensity detectors and their "quadratic" properties make interferometers

possible, as will be shown further down.

Page 31: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 20 -

If the wave amplitudes are squared by themselves all phase related informa­

tion is lost in this process: phase angle, frequency and propagation direction are not

obtained and require an additional "conditioning" of the wave before it enters the

detector in order to be obtained.

The vector properties of the light wave amplitudes permit application of all

methods of vector calculus, including addition and subtraction of the (electric field)

wave amplitudes and the decomposition of the polarization of the amplitude vector

into two orthogonal components.

Other light properties are not adequately described by the wave concept: the

light intensity calculated as I = Eo2 would permit infinite resolution and therefore

neglecting the quantum nature of light. The resolution limit is given by the photon

energy

E hI,) (2.1-3)

where h = 6.62517 X 10-34 joule and \) = cIA is the light frequency. The intensity in

the photon concept is then

I :: N hI) (2.1-4)

where N is the number of photons per unit time and area.

The photon concept is also applied, where radiation interacts with matter as

for example in absortion and emission processes in lasers.

Instruments, which encode their measurement signals by intensity modulation

("amplitude modulation" or "amplitude sensors") have a typical resolution of 10-3 or

10-4, although photon counters permit a higher resolution.

2.1. 2 Coherence of Light

An additional important property of light, the coherence, is not incorporated

in the wave model described above: The above model describes the very ideal

situation of a wave, which originated at times t = - at;;> and will continue to a

similar future point, and which has in addition no lateral boundaries in contradiction

to any real physical situation.

I:' r-'.

l.

! .'

Page 32: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 21 -

Fig. 2.1-2 Temporal coherence of light. a) perfect wavetrain; b) limited coherence due to phase changes.

c) Spatial coherence of light.

Page 33: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 22 -

In the real world "white light" is most common, consisting of a mixture of

short wave trains with different frequencies, directions of propagation and different

polarization. Even within the wave train the phase may be interrupted and the lateral

dimensions of the waves are small.

The concept of "coherence" is introduced as a general statistical description

of such radiation fields in terms of correlation functions (5). Interference is the

oldest and simplest example of a technique to establish the correlation between two

light beams or the correlation between light emerging from two different points on a

light source. In this now somtimes called "classical" concept of coherence (in order

to distinguish from efforts starting around 1960 for more detailed descriptions)

temporal coherence describes the time, over which a wave train does not exhibit a

phase disturbance and can thus be "correlated" or compared to another wave train of

equal polarization, frequency, and propagation direction (Fig. 2.1 - 2a). This

coherence time is equivalent to the damping time of a damped oscillator and

therefore related to the "bandwidth" or "line width" A ~ of the light frequency:

Ll t" I

(2.1-5) .-During the time Il tc light travels dlc = c·Ate. which is the length of the

coherentwave train. Light is termed quasi-monochromatic, if 11 v,,'" V.

Spatial coherence describes the lateral confinement of a (plane) wave train at -

the source, over which no phase disturbance occurs, see Figure 2.1-2. A mathema-

tical formulation can be derived from Figure 2.1-3 as follows: The source f is

viewed from some distance at different locations PI, and P2 separated by Ll u and

appears from each position under the solid angle .d.Jl2. .• The spatial coherence length

tau is then the maximum separation between PI, and P2, under which the same phase

of the wave fronts originating at.:f' are obtained and the relationship holds

(2.1-6)

(A u)2 is called area of coherence of for the source f . Combining both coherence effects defines a volume CA u)2 . a l c, the

coherence volume. The energy of one "photon" within this volume would have no

characteristic distinctions, as there are no "phase" bumps etc. within this volume and

I i I '.'

i

Page 34: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 23 -

f

Fig. 2.1 - 3 Spatial coherence of light: ;fextended lightsource, ~u: separation of two pinholes,LJ..n.angular separation of pinholes

Page 35: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 24 -

therefore it would be impossible to resolve the position of a photon more accurately

than this volume (2). This volume is therefore compared to the elementary phase cell

of size h3 in thermostatistics and termed energy mode in optics. The fundamental

difference however appears due to different statistics to be applied: while in the

thermodynamic elementary "mode" a maximum of one particle exists there is no limit

for the number of photons per elementary cell. Photons are "bosons" in their

statistical nature. This permits by means of many photons per mode a virtually

unlimited resolution of the mode volume. The number of photons per second

available in a mode (degeneracy''> is a figure of merit for the light source to resolve

or carry information:

(2.1-7)

where the factor 1/2 takes care of two polarization states and it,,), the "radiance,"

describes the intensity distribution over the line profile expressed in photons per unit

area, solid angle, unit frequency interval and unit time.

A narrow emission line light source has a bandwidth of A \I = 108 Hz or a

coherence time A tc .,.10-8 equivalent to £I e c ~3 m. The degeneracy is then about O%> 10-3. A laser running in TEMoo longitudinal mode can have a power of several

watts and bandwidth of 100 KHz are not rare. Thus Atc .. 3 km and rf--- 1014 (5).

Taking this last figure and comparing it with typical figures for laser diodes we

obtain A '" ~ 100 MHz and a power of several milliwatts which would provide a

degeneracy of about d'~ 109 and higher.

From the discussion above it is obvious that the extraordinary properties of

lasers are not so much its coherence length but its enormous photon numbers

available for a single mode. It appears that either multimode - few photon light

sources exist for the development of instruments such as incandescant light sources

or gas discharges or high photon number - few mode light sources. The intermediate

regime leaves room for future developments of light sources.

Table 2.1-1 summarizes the temporal coherence properties of some sources

of radiation.

I . t j

I··

Page 36: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 25 -

Table 2.1-1 Temporal Coherence of Radiation Sources (after (3) )

Source

HF oscillator (lMHz)

Quartz oscillator (lMHz)

Visible spectrum (Light)

He - Isotope Lamp

He - Ne Laser

Semiconductor Laser Diode

Linewidth Bandwidth

s-1

102

10-3

2xl014

107

3 .... 104

108

Coherence Time tc

s

10-2

103

5xl0-15

10-7

0.3 ..• 10-4

10-8

Coherence No. of Coherent Length Ic Wavelengths

m

3xl06 104

3xl011 109

10-6 3

30 6xl07

3x I 04 ... 1 08 3xl0 10 •.. l0 14

3 6xl06

Page 37: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 26 -

2.1.3 General Properties of Interferometers

In the last sections properties of light and the possibilities to encode k',

information in intensity {"amplitude modulation"} was discussed in the (plane) wave

and particle picture of light. Another possibility, the encoding by polarization, has

been used in instrumentation as mentioned in 1.2.3 but will not be further discussed.

These two approaches exhaust the possibilities to decode information contained with ~

the maximum amplitude of the electric field, Eo, in 2.1-1 of plane waves.

As mentioned earlier the "phase information" contained in the exponential

term ?f plane waves described by 2.1-1 is lost for detectors. Interferometric

techniques are used to reconstruct this information. In interferometers a signal

containing coherent wave train is correlated (or compared) to a coherent reference·

wave train. Changes in coherence time, spatial coherence, frequency or wavelength,

direction of propagation and phase angle, even in polarization and electric field

amplitude are detected by simply bringing the signal and reference wave trains

depicted in Figure 2.1-11 to an overlapp. The electric field vectors of reference field

Er and signal field ~ are added (as vectors) and form a new resulting radiation field -- . ..... -Et. A detector provides the mathematical operation of formin!1; the square of Et = Es -"

+ Er as intensity proportional output. For plane waves we obtain: ... e. i (k,X ~ t.Jr t + r,. a))

(2.1-8)

(2.1-9)

Where slightly different frequencies W =: 2 1T'Vr and Ws are permitted, as long as

the frequency difference L1 ~.~ {tJr ~l.:J~/is smaller than the linewi.dth f:. Vc; = . J1 We 271"

determind by the temporal coherence.

Page 38: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 27 -

Eor

Eos

Fig. 2.1-4 Interference of two beams of equal intensity but different phase angle 'f.

371"

Page 39: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 28 -

The total intensity is then -"

Er :> (2.1-10)

I 5 1 ,.. t Jsr (2.1-11)

where Jsr is the interference term. If WI"'" Co> 5 this is

and the last two terms describe a new travelling amplitude wave with frequency

(ill.,) 1= l4Jr - wsl. This heterodyne interferometry will not be further discussed here.

For CJr :c,)s (homodyne interferometry) we have

(2.1-13)

which shows the dependence of the interference term on the amplitude and the

phases of the waves.

The first term Ll k x describes the interference due to different propagation

directions which fo.rm an angle between the wave fronts. This may be caused by

shear or tilt of the radiation fields ("misalignment of mirror").

The second term describes the relative delay of the wavefronts t1"t

(2.1-14)

d p is the difference in "optical path" both wave fields have travelled caused by

differences in the index of refraction "n" or geometrical path length "I".

I

Ie.,

I .

i . ,

i:. I",:;:';

Page 40: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 29 -

If the maximum amplitudes of reference and signal wave are equal,

IEori = I Eosl the interefrence signal can be written as (2.1-11,2.1-13):

It-(x) = 2 I [I + Cos (tl/{; + !JC{'(X)j (2.1-15)

If (x) ~ I COS 1. (1 t1 i<; + A rex) ) (2.1-16)

... and if L1k :: 0 both wave fields are propagating into the same direction ("co-

linear") we obtain

(2.1-17)

Interference maxima and minima appear for phase shifts corresponding to

half the wavelength of the lightwave, the maximum intensity is four times the

intensity of signal or reference field and in the minimum zero intensity is obtained,

see Figure 2.1-5.

r ~I

r---"'#'--f..--~'-----'t:.'f Fi g. 2.1-5 Inf..erferonco oC Lwo beama oC equal intoll8ity~ \'Rl"iat.ioll of int.t'.llsity Wit.Jl

phaoe diff .... nc. tJ. If [1]

Page 41: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 30 -

It can be seen from 2.1-16 that an intensity change in time at the detector

indicates only a change of either the amplitude, polarization, wave vector or optical

path difference, not, however, which quantity has changed. This property as well as

its sensitivity makes interferometers delicate but at the same time very universal

instruments, as it can be adopted to measure either of those variables.

The intensity maxima (or minima) are termed "fringes." The "fringe" output

from interferometers causes two difficulties in the further processing of the data,

.;.'~; ,-,-

sometimes referred to as "fringe problem." ['.-'

Let us assume a sensor signal produces a monotone increasing phase

shift Al(/').., Figure 2.1-5 and eq. 2.1-17. This results in a i) periodic and ii) non­

monotone intensity signal, which does not describe the phase angle r uniquely and is

therefore degenerated: major parts of the information on the "phase" are not

completely recovered due to the "squaring" properties of the detector.

The problem arises from the phase being a complex or vector quantity, which

requires definition of both the scaler length and angular direction to define any

arbi trary phase P( 'f i, see Figure 2.1-6a.

Alternatively the projections of the phase on the real axis "r" and imaginary

axis "i" characterize P uniquely, Figure 2.1-6b. With increasing phase angle t1 if the

phase P rotates on a circe I with radius 2fT. The projections on the r-axis correspond to

the known result 2.1-15 Of we neglect unessential details here\ given in Fig. 2.1-6a:

T (2.1-18)

However the dotted vector could produce the same signal, if the point pI, is moved in

"-" direction and only the additional information of the "direction" (sign of A r) will

identify P uniquely within a full period. This corresponds to measuring the i­

component:

12.1-19\

and the phase P(I.1?,) is reconstructed as:

12.1-20)

I I,:

i.

l ' , !

Page 42: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 31 -

III GJ ~

'" l- e

'" .... ""e :::IGJ -+ : o e .... 0 ..... : ... 9- / III e

<l GJ 0 "t:! U ~ .... a.. > I 0 s: "" .... ...

<l ...... Q.O - -...

"" ~o

" .:;; !. CO

'" ..... GJ~

'" .c .... 111 e . ........ GJ

0", >. e

..Q GJ· ...

"''''' I • e .... ... '" • .cGJ ue

I GJ 0 1II"t:! ",ee .c n::I'~ ... .c

I GJ .... I.f- c.'po-OO:J: ~

I ellle 0 0

9- .,..~.,..

.... "' .... <l '" '" N .... N

I .,.. 0'",

"" "" GJ .... GJ .... e ....

I U~U

'" '" V ""OJ"" "'''''''' I .c:::l.c UIIIU

'" .. ~!Q I e 0

GJ ~ :::I ~"'''' .Q c·,.. 00..0 5-'", E ....... '" .... e OJ "t:! :::I "'"t:! e < III .... GJ

"" "t:! N ----- ----- '+- I ....

GJ~i; .c<l"" I- ...

Ie I .... .

N . '" ....

..... Q. .....

0

Page 43: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 32 -

within one full period. Counting of "periods" or "fringes" can solve the remaining

problem. A different solution will be pointed out further down.

The previous considerations are interpreted as follows: For complete phase

recovery an additional measuring channel has to be provided. This channel has to be

independent from the first (orthogonal basis vectors "i" and "r") and contain phase

information. Cos and sin functions are related by a constant phase difference of 1l' /2

correpsonding to II / I.f in wavelength and it is a common approach to create a

separate channel by choosing a polarization 900 to the first channel and delay the

wavefronts with 11 /4 waveplates ("retarders"). These components are however bulky

in comparison to laser diodes and cannot be applied to the highly integrated laser

diode interferometer, as will be discussed later (Chapter 5). Two other possible

approaches are "differentiation" of the signal and operation of the interferometer at

two wavelengths.

Due to the principle of energy conservation there exists in every interfero­

meter a fringe system which is complementary to the first, thus explaining the total

intensity amplitude of 21 (eq. 2.1-15) for either of the fringe systems. "Complemen­

tary" means the systems are out of phase by 1800 and if "System I" is observed in

"transmission" direction on a dielectric mirror "System 2" will be observed in

"reflection". Metallic mirrors with absorption are known to introduce additional

phase shift. It is however not possible to implement in this way the second, phase

shifted signal channel with the laser diode sensor. Other methods are described in

the literature (9), (J 0), (J I), (J 2).

The problem of periodicity led to counting of fringes to establish the exact

relationship for the phase. A different solution can be obtained, if an additional,

montone modulation of the intensity with the phase angle A. if is provided: in this

event the phase point p(d.r) rotates along a spiral and permits the unambiguous

recording of P over many periods by two intensity measurements of the "i" and "r"

components. This results in monotonically decreasing or increasing fringe sizes of

both "i" and "r" signals, see Figure 2.1-7. The length of the vector

p (2.1-21)

gives an unambiguous measure for the phase angle and the information encoded in it.

This is the calibration function for the instrument.

I I

I

~','.

Page 44: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

210

r

"I" SIGNAL a) b)

Fig. 2.1-7 Calibration curve I (tlf)

a) Monotone declining intensity represented by length of vector up" solves periodicity problem of fringes.

b) Envelope provides calibration curve I (b.~).

t:.1{J

______ w

w

Page 45: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 34 -

While the outlined approach is necessary if output of more than one fringe is

produced a simple measurement of the "i" or "r" signal is sufficient as calibration

curve p(Ar), if only output of one half fringe is produced.

Interferometers are used to measure five different quantities:

i) geometrical measurements, length 1

ii) measurement of refractive index, n

iii) measurement of the ratio between wavelength A from a standard source

and mechanical length 1

iv) comparison of two wavelengths

v) measurement of spectral line profiles

Each of the quantities can be used to encode pressure information, although only

method i) and iii) follow the traditional approach of mechanical gauges reviewed in

Chapter 1.

In summary the fundamentals of optical radiation and interferometers have

been reviewed, permitting an insight into design parameters for interferometric

sensors in general. The discussion should have revealed why interferometric sensors

are quite delicate, but sensitive instruments. Further the "fringe problem" has been

identified as loss of information from the complex phase during the transformation

(performed by the detector) to a real number, the intensity. Other than in

radiowaves no alternate detector is available. Introduction of a second measuring

channel "i" overcomes this problem. Additional intensity modulation provides the

unambiguous construction of a scalar function P(A'() which is the calibration for the

instrument.

The technological implementation of the interferometric principle will be

discussed only as much as is necessary to understand the very unique properties and

functions of components of the laser diode interferometer under 3.2.

i·--·

Page 46: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 35 -

2.2 Two-Beam Interferometers

Interferometers are commonly classified by the method of creating reference

and signal wave into instruments where a wavefront is divided into two or more

sections ("wavefront division") or by splitting the wave amplitudes ("amplitude

division"). The latter class will be considered here only. A further classification

distinguishes between two-beam and multiple beam interference. The laser diode

interferometer shows characteristics of both types.

A typical example for a two-beam interferometer is the Michelson-instru­

ment, Figure 2.2-1, where the wave amplitudes are split by beam splitter BS into

reference path R and signal path S. After returning from the mirrors M I and M2 the

beams (or radiation fields) are united again by BS before reaching the detector D.

Varying the mirror position by All causes a difference in the optical path length of

2 II ilo n between signal and reference arm and cause a phase difference

2.1r T (2.2- I)

Generation o~ the 900 shifted "i" signal can be achieved in various ways: A

polarizer inserted behind the light source followed by a}t. /4 retarder plate, which

generates two perpendicularly polarized and by;>' /4 delayed beams which pass

through the interferometer arms. A polarizing beam splitter in front of the detector

can separate the "i" or "r signal before the wavefronts are.detected by two detectors.

Another variation of a Michelson interferometer is given in Figure 2.2-2.

This set up (9) uses retroreflectors for greater mechanical stability. The two 1800

complementary fringe systems are used for signal improvement and 900 - delay

technique gives full reconstruction of the phase in conjunction with electronical

fringe counting.

Page 47: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

'\;;[;g

MI

R II

• as

~ ~2

(2) /

LIGHT SOURCE / '''-- -v-~------

Fig. 2.2-1

~ 12

S

Wo

Conventional set-up of a Michelson Interferometer: r·11' M2: stationary and movable mirror; 0: detector; S: signal arm.

;:;-. ;.;

AI2

BS: beam splitter; R: reference arm;

-~,....----;-

w

'"

Page 48: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

MIRROR

FIXED

CORNER

THIN fiLM POLARIZING

CUBE BEAM-SPLITTER

REFLECTOR )C ~O/~O

BEAM

SPLITTER

... DETECTORS 0, I

MOBilE CORNER REFLECTOR

Fig. 2.2-2 llichelson interferometer for high mechanical stability and signal improvement [9].

MIRROR·

/d.

<l="t> w .....

Page 49: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 38 -

2.3 Multi-Beam Interferometers

The Fabry Perot inteferometer is the best known multi-beam interferometer

and forms the principle of nearly all laser resonators. Here several radiation fields or

beams are created by multiple reflection from two partly reflecting parallel surfaces

as given ins Figure 2.3-1.

As outlined in 2.1 for two beams the reflector and transmitted amplitudes of

the respective electric field vectors are superimposed and the respective intensities

R (reflection) and T (transmission) are obtained. If absorption can be neglected the

intensities are normalized such, that the incident intensity is equal to one:

R + T I (2.3- J)

The phase difference between successive beams is according to Figure 2.3-1:

d::. nl h cos Q' (2.3-2)

and the intensities observed in the arrangement of Figure 2.3-2 are for the ratio of

reflected (r) and incident (i) waves:

F Sin 2 ..sf T(r}

(2.3-3)

and for the transmitted and incident waves

I (t)

I (2.3-4) -I (iJ - + F S('n 2 J' I z.. where

F ~R

(1- Rt (2.3-5)

r ' i , .

i

i r . L .

I····· ,

i L'

!-

Page 50: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 39 -

s c,

W

n n

n'

T n

n' h

1 •

£, £2 EJ Fig. 2.3-2 i g. 2.3-1 Reflection of a plane W8\"O in a plano parallel plnte! 1] Illustrat.ing ronnation of multiple 'beaJ\l fqngcs of equal incJinatiol:

with a plane parallel pIat.ol.1J

7 -

Fi g. 2.3-3 lll1ltiplu beam fri.n~ of l'qunl inclination in transmitted light: ratio lUI/lUI ofttRlumlitk'tJ. aud iliCidf;>ut intc:onsiti~ lLi a function of phoso diffcrt'nco d (m is an inwb"Cr). [1]

Page 51: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 40 -

The latter ratio is shown for various reflectivities "R" in Figure 2.3-3 and it becomes

clear, that high reflectivities provide a transmission filter, which permits good

transmission for only very small phase shifts. For low reflectivities "R" also F is

small and the nominator of (2.3-4) can be expanded and retaining only first order

terms it becomes

t-f (I-ecscf') (2.3-6)

The intensity varies in the form characteristic for the two beam interferometer,

although the modulation depth is very shallow. In Figure 2.3-1 this corresponds to

interference of only two beams CI and C2 or EI and E2.

A small change in geometrical separation "h" of the reflecting surfaces, Fig.

t

2.3-1, produces - due to multiple reflections - a large path difference between the i._

first and say the two hundredth beam resulting in a more drastic change in output

than for the two beam configuration. For a sensitive instrument the operational

point would be chosen at half maximum intensity with high reflectivity. As will be

seen in Chapter 4.4 the laser diode sensor operates in this regime.

If absorption is present, as for example in metallic films, the intensity ratio

for the transmitted intensity is reduced by a factor: r(t}

2 J

) /fF.5tj,/f (2.3-7)

where now holds for the intensities:

/2+R + T I (2.3-8)

The phase is changed upon reflection an additional amount e. If one of the surfaces ,

is made from an absorbing material constant phase difference" between transmitted

and reflected intensities will be obtained.

Page 52: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 41 -

In a laser diode the resonator forms a Fabry Perot cavity with plane parallel

surfaces similar to Figure 2.3-1, where the angle of incidence is 900. Fresnel

reflection under this condition is for n = 3.5 about R = «n-ll I (n+j))2 = 0.30 and the

intensity maxima for the resonator curve are fairly wide, as will be seen from tests,

Chapter 11.11.

As the principle idea behind a Fabry Perot interferometer is the splitting and

delaying of wavefronts before they are combined again we can think about a further

modification by adding an additional mirror on one side, say "D" in Figure 2.3-11. The

rays between D and B, etc. will now be produced by interference and therefore

appear to be produced by an "effective" reflectivity from the combined surfaces D

and F. Changing the distance d between the first (laser) cavity and external mirror -permits a control over the phase of the wavefronts DB and thus the intensities of the

"C" radiation field. If reflectivities at D and F are Iowa sinusoidal modulation will

be observed at "C". Neglecting the complications due to the presence of the active

laser material this is the scheme of operation for the laser diode sensor (13), which

will be reviewed in more detail in section 3.2 after ·the general properties of laser

diodes are reviewed.

Page 53: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

n

n'

n

I ~'

e I

- 42 -

LASER

DIODE

d

1111//11 EXTERNAL MIRROR

Fig. 2.3-4 Light rays for multiple beam interference in the set-up of the laser diode sensor.

1

I,

Page 54: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 43 -

2.~ References

1. M. Born, E. Wolf. "Principles of Optics", ~th edition, Pergamon Press, New York, 1970.

2. H. Weber, G. Herziger. "Laser-Grundlagen und Anwendungen", Physik-Verlag GmbH, Weinheim-W-Germany, 1972.

3. K. Tradowsky. "Laser-Kurz und Bundig", Vogel-Verlag, Wurzburg - West Germany, 1968.

~. A. Nussbaum, R.A. Phillips. "Contemporary Optics for Scientists and Engineers", Prentice Hall Inc., Englewood Cliffs, N.J., 1976.

5. W.H. Steel. "Interferometry", 2nd edition, Cambridge University Press, Cambridge - Great Britain, 1983.

6. A. Yariv. "Quantum Electronics", 2nd edition, John Wiley & Sons, New York, 1975.

7. M. Garbuny. "Optical Physics", Academic Press, New York, 1965.

8. S.G. Lipson, H. Lipson. "Optical Physics", 2nd edition, Cambridge University Press, Cambridge - Great Britain, 1981.

9. J.P. Legendre. "Displacement Measurement with a Michelson -Type Interferometer", National Research Council of Canada, NRCC No. 19829 -ERB 939, November 1981.

10. J.W. Edgerton, K.L. Andrew, Rev. Sci. Instruments 1>5(2), 1971>, 219.

11. W.H. Southwell, Appl. Opt. 19(16), 1980,2688.

12. C.O. Weiss, Forschungsbericht BMBW, K73-11>, (1973). Institut fuer Plasmaphysik, Universitaet Hannover, West Germany.

13. A. Dandridge, R.O. Miles, T .G. Giallorenzi, Electr. Lett. 16, 1980, 91>8.

Page 55: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

j'

Page 56: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 44 -

3. LASER DIODES

Objectives:

The following chapter reviews properties and operational parameters of laser

diodes of present Ga Al As technology for both intrinsic operation and operation

under optical feedback. This serves to identify favourable and unsuitable laser

structures, parameters and operational conditions.

3.1 Intrinsic Properties of Laser Diodes

The following review in. Chapters 3.1.1 to 3.1.3 is based in large parts on a

summary given in (I).

3.1.1 Laser Diode Structure

A semiconductor represents a pn-diode in the geometry of a suitable

resonator. Three different pn-structures are utilized for the production of laser

diodes: pn-homo-junctions, pn-singlehetero structures (SH) and ppn or nnp double­

hetero structure (DH). Liquid phase epitaxy is used to manufacture the structures.

Figure 3.1-1 shows a typical DH-structure.

The active re~ion (n- or p-Gal_x Alx As, xl!: 0) is sandwiched between an-and

a p-Gal-y Aly As layer with x<y and x,y mole fractions. These layers have a larger

energy band gap and a smaller index of refraction than the active region. Conse­

quently a potential well forms in X-axis for the injected charge carriers as well as a

dielectric waveguide for the propagation of the light waves.

For lateral confinement (y-axis) of the active region a number of different

technologies led to the development of various DH-structures with different proper­

ties, including: oxide-strip laser, V-groove laser, buried-heterostructure (BH) laser,

channeled substrate planar (CSP) laser and transverse-junction-stripe (TJS) laser.

Page 57: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 45 -

•..• _ .. .--.•• _ ..... ..,I.;::..""7?" ... O'::

----------~--~~~x y

IR - radiation z

metal contact

P 'Go Al As l-y y

P 'Go Al As acti ve 1 ayer l·x x

n -Go Al As . l-y Y

n- Go As (substrate)

meta 1 contact

Fig. 3.1 - 1 Typical DH- laser diode structure (from (1)).

DH-Iaser diodes are classified by their lateral wave confinement into two

groups: in "gain guided" (gg) lasers the lateral wavefront confinement is achieved by

the lateral distribution of the charge carriers, which provide the optical gain in the

laser (2). The second group includes "index guided" (ig) laser diodes, where the

specially designed index profile provides a waveguide effect (3). Laser mirrors are

provided by the (I 10} cleaved facets (yz-plane) of the Gal-x Alx As crystal. The high

refractive index of the crystal material of n = 3.6 results in a Fresnel-reflection at

900 of about 30%. Due to the high optical gain in the laser material this is

sufficiently high to obtain optical feedback and laser oscillation.

,

i

r·'.'-' :-: .. : I

I i

I .

I I i :

r-.-.-

! •

Page 58: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 46 -

3.1.2 Laser Emission

3.1.2.1 Intensity

A bias voltage in forward direction on the laser structure reduces the

depletion region of the pn junction and electrons are injected as minority carriers

from the n-Gal_y Aly As layer to the p-Gal-x Aly As layer, which forms the active

region. We discuss the emission of light in terms of the band gap model of the pn­

junction with valence - and conduction band. It is then a necessary condition for the

emission of light that the conduction band of the active layer contains more injected

charge carriers (electrons) than to be expected under thermal equilibrium conditions.

The disturbed semiconductor tries to return to equilibrium condition by recombina­

tion of injected electrons in the conduction band with the holes (minority carriers) in

the valence band. The excess energy is radiated in form of a photon (spontaneous

emission). The energy of the photon is roughly equivalent to the gap between

conduction - and valence band of the active layers of about 1.4 eV, corresponding to'

about 800-900 nm wavelength in the near infrared region. The emitted wavelength

can be shifted by variations of doping type and - concentration in the active layer.

For cw operation of the laser diode a steady-state population inversion between

conduction - and valence band must be maintained within the active layer. This is

obtained by minority carrier injection. Additional to the first laser condition

(population inversion) the optical gain of the stimulated emission process must be

sufficiently large (second laser condition) to compensate for losses of the laser

resonator. Under these conditions a spontaneous photon with an energy smaller or

equal to the difference of the quasi-Fermi-niveans of p- and n- layer is no longer

absorbed. It stimulates the recombination process described above and thus creates a

"secondary" photon ("stimulated emission") with identical characteristics to the

primary photon. This leads to the extraordinary coherence and light properties

discussed in Section 2.1. The threshold of laser oscillation is characterized by

= R, R1. 0.1-1)

stating that the losses per unit length, ct, are compensated for by optical gain g (per

Page 59: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 47 -

unit length) and the effects of the resonator formed by two reflectors with

reflectivity RI R2 at a separation I and a resonator "round trip" length L = 21. For

some lasers the gain "g" is very high so that no reflecting elements are required. For

semiconductor laser diodes a small reflectivity (of 3096) is sufficient to obtain laser

oscillations.

At small diode currents "I" spontaneous emission dominates ("LED-mode")

giving low spatial and temporal coherence, while at high current the stimulated

emission process prevails ("Laser-mode") leading to larger spatial and temporal

coherence, narrow linewidth of emitted light and high intensity per mode. The

transition from dominating spontaneous to stimulated emission and laser action is

characterized by a point, the threshold current !th· Due to the temperature dependance of gain - and loss factors of the active

layer the threshold current changes according to

(3.1-'21

exponentially with the temperature Tal o"f the active layer, where I*th is the "ideal"

threshold current of the active layer without self-heating effects. (1* th would be

obtained in pulsed operation) 1* th 0 is the "reduced" threshold - .current at 0 K and , To, a material constant with a typical value between 100-300 K. To depends on diode

geometry, doping concentraton in the recombination region as well as the energy gaps

at the heterostructures (I+l.

During cw- operation a considerable fraction of the electric power is

dissipated into heat by two processes: j) ohmic heating according 12r (r: electric serial

resistance of laser diode; typical 0.05 - 5 ohms) and jj) radiationless recombination of

electrons and holes: U I (U: pn-junction voltage,~ 2V). In order to limit the active

layer temperature Tal to acceptable values an efficient heat transport from the

active layer is required. This is usually done by connecting the laser diode efficiently

to a passive eu-heat sink. The combined heat losses lead to an incrase of the active

layer temperature over the heat sink temperture Ths of

I1T IV (u I +- I?'r) Rr 0.1-3)

where RT is the thermal resistance between laser diode and heat sink with typical

I l

f-,

1_.

Page 60: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 4B -

values 20 - 1500C/W. According to eq. 3.1-2 the temperature increase of the active

layer increases the "ideal" threshold current 1* th:

(3.1-4)

A steady state cw- operation is reached for the laser diode according to eq. 3.1-1 to

3.1-4 only when the (four) independant parameters which govern the laser emission:

electrical serial resistance, "thermal resistance, threshold current and its thermal

dependance are balanced among each other.

Thermal cycling reduces the lifetime of the laser diode considerably (6) and

should be avoided in precision devices. The design of a good heat sink and effective

heat transport between laser active layer, heat sink and bonding of the laser chip is in

its difficulty sometimes compared to the design of specific laser properties (7).

Other parameters effecting laser emission include electric and magnetic

field, pressure applied to the laser crystal and air convection. The latter three

effects have been observed in this lab and are not documented in the open literature.

LEO mod.

Fig. 3.1 - 2 effi ci ency

lUI

current I

e ~~\ Tl.xt • hV 'FfJ

Definition of threshold current and external quantum

Page 61: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 49 -

The optical power L of a laser diode is characterized as function of the

current above threshold by the external differential quantum efficiency "l. ext, Fig.

3.1-2, which describes by how many photons the laser output is increased for a

certain increase of injected electrons:

::: e hv (3.1-5)

where e,h,V are electronic charge, Planck's constant and frequency of light.

The quantity

AL AI (3.1-6)

(operating efficiency) is obtained as slope from power measurements. The slope may

vary slightly with aging. Typical values (5) are 0.30 ~ ""2 ext":::: 0.75 corresponding '1;\ it? R . ""'vv

for 11 = 830 nm, he = 0.67 ~ to 0.45 ~ 4. op = 1.12 MR·

Any shift in threshold current Ith either due to thermal effects or to change

in gain will be observed in dramatic changes in optical power.

The gain g is found to be related to current empirically (5) as

f3 I WI (3.1-7)

where (3 is a proportional factor and therefore

11:1-, :- (-, [d\+ -'. f3 L

(3.1-8)

where R I, R2 are the laser mirror reflectivities, which form a Fabry-Perot resonator.

In this approximation a change of the effective reflectivity R I (or R2) as discussed in

2.3 will shift the threshold current by Ll Ith and therefore modulate the laser output

by

ilL 0.1-9)

i ,

Page 62: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 50 -

From these simple considerations a high operating efficiency is useful, however not

critical, as lowest and highest typical values differ only by a factor two. This simple

approximation points out also the importance of high current stability and thermal

effects for the laser diode performance: the required optical power resolution and

current stability (and repeatibility) are of the same order of magnitude giving for

Lo = ImW and a resolution of 10-~ a current stability of better than 100nA over the

longest time scale considered. Similar estimates for thermal effects lead to an

acceptable temperature fluctuation of the order of AT = I mK.

Doping AI-mol concentrations 0 = X = 0.~5 lead to direct band gap materials

and can be used for laser production, while higher concentrations provide indirect

band gap materials, which are used in passive devices such as wave guides or

modulators (20).

Thermal conductivity is a strong function of AI mole fraction, see Figure 3.1-

3 (from (20) ) and therefore thermal properties and emitted wavelength are not

independent. AI provides a shift to shorter wavelengths (7) and low AI - content laser

may prove more stable.

3.1.2.2 Frequency and Wavelength

The frequency properties (wavelengths) of the light emitted from a semi­

conductor laser diode are determined by many parameters including the emission

band of the transition, the gain curve, the resonator modes and finally properties of

the laser mechanism which reduce the Iinewidth further, see Figure 3.1-~.

The wavelength range of the emission band is a material property; for Ga As

the centre is around 8~0 nm (9), (10) while the band is between 800 and 900 nm (10).

Variation of the doping concentration x shifts the emission wavelength between 730

and 900 nm for Gal-x Alx As laser (9).

Commercially available devices emit in the range 790 nm (optical recording)

to 850 nm (indicating that outside this range the mixed crystal is not very stable).

Wavelength around 790 nm are still (barely) visible for the human eye and therefore

favourable for alignment.

Page 63: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 51 -

• j 02 t-

.- ~

00 ~.l.-J....l..J~.l~'~' -'--w_

i , t , .J

OO 02 04 06 08 '0

Fi g. 3.1 ~ 3 Dependence of Ihl!rm:.1 L"UlHlu..:tivity un :\1 mille fractiun.

[

Page 64: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

a)

I b)

3

/ /

I

4

",

",

- 52 -

2 -....... 1

'-.. -<.' "­

\

Fig. 3.1 - 4 Frequency bandwidths of semiconductor band 2: gain profile 3: resonator mode bandwidth a; at low gain b) at high gain

.t.m&O, ~.o,Aq,,-.

iAA.L8Al Cm.n.q+1l

(m.n.q)

(m.n,q +2) (m,n-+I,q+I' (m.,n+ I ,CI )

Cm.n+l.q + 2)

(m.n+2.q+~ Cm.n+2,q" Cm.n+2,q)

8376 8380 8382 ·8384

WAvELENGTH" (A,)

I'

"

lasers: 1 emission 4: laser linewidth

S-12.5fLm L. 37~~m T· n·x

I'1'I- 150rno

I ·170mo

Fi g. 3.1 - 5 High resolution OJ spectrum of a GaAs laser

Page 65: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 53 -

The gain curve Figure 3.1-11 depends as discussed in the previous section on

current, temperature, mirror reflectivity (or photon concentration in the laser).

Typical gain curves have about A'/I = 5 nm (FWHM) and permit the development of

several longitudinal modes (27). At low gain few modes develop, while high gain

permits also the development of side modes.

The laser diode sensor requires true single mode operation. Laser modes will

be discussed in some further detail.

A semiconductor laser diode represents a plane parallel Fabry-Perot etalon.

The distribution of the inversion state density in the z-y plane, Figure 3.1-1, permits

excitation of the fundamental transverse mode TEoo as well as the higher orders

TEzy = TEOl, TElO, TEll etc. For DH-structures the active layer is ~ 0.8 "' ... in

z-axis, permitting only one mode in this direction. The active layer measures in

y-axis ~ 20 fi"" permitting the excitation of higher order modes in y-direction: only

the modes TEoo, TEOl, TE02, are permitted. The active layer width in y-direction,

refractive index gap perpendicular to the active region and the injection current

determine which of these modes get excited. Transversal fundamental mode

operation is obtained by reducing the active layer width. Sometimes lasers operating

in transverse fundamental mode are called misleadingly and unprecisely "single mode"

lasers, without regarding longitudinal mode properties.

Typical transversal mode separations are in the order of 0.01 nm (12) to 0.02

nm, corresponding ot 10-20 GHz. Laser line width are 1-300 MHz, with 50 MHz - 70

MHz as a typical value (53) and cavity modifications have been used to reduce the

linewidth down to 1 KHz (511). These data in connection with the discussion of

eq.3.l-l2 shows that for multi-transversal mode lasers a temperature control of

better than 0.5-1 K is required if transversal mode hopping noise has to be avoided.

For the excitation of the longitudinal modes TEoom, TEoom+ 1 the inter­

ference condition holds:

2 Yl~ e (3.1-10)

where i\.., are the wavelengths of the modes in (integer number) and nm is the index

, -r

I I

L-_.'

i·-

Page 66: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 54 -

of refraction at the active layer of i\ ... For typical laser diodes holds:

1=300 ,.."" ,(1m = 3.6, ~ = 830 nm and 1'1'1 = 2600 are the number of half wavelengths

r. per resonator length I. Differentiation of 3.1-10 gives

+ oU e (3.1-11l

which permits the calculation of the mode separation by setting dl = 0, dm = -I and

for i\ = 830, nm = 3.6, dn/d i\ = 1.1 X [0-3 nm- I (4) we obtain (depending on

resonator lengths 1) from

2Y1 ... e (J -~: j~ J (3.1-12)

longitudinal mode separations of II i\ m,m-I ~ 0.2 ....• 0.6 nm, see Fig. 3.1-5.

Thermal load will according to 3.1-11 change the cavity length and index of

refraction, which will result in two effects: i) for small temperature changes Ii T

only wavelength shift will occur at a rate

~ 0.0065 nm/K - 0.06 nm/K

and ii) for A T~ 2 K wavelength shift and mode-jumping result in an overall rate

0.25 nm/K

The latter is also obtained from the approximation of 3.1-12 (8)

Lll\ 2 Yleff l

0.3 VI"" I K

with neff = 4.4, 1\ = 830 - 870 nm, I = 250,.. ... indicating a considerably different

index of refraction of the active layer than generally adopted. - For communication

applications temperature is controlled to .:t. 0.5 K by a Peltier cooler using a 10K ohm

thermistor as reference. Current requirement for a 4 T = 40 K temperature

difference is about IA. Longer wavelength laser diodes emitting at 1.3 and 1.6 r .... are more temperature sensitive. Although the high resolution spectrum given in

Page 67: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 55 -

Figure 3.1-5 looks very "clean" it is very deceiving, as pointed out by D.T. Cassidy

(15): such spectra are time averaged over long time scales and the difference

between long and short time averaging is apparent from Figure 3.1-6, taken from

Cassidy (15): at a detector time resolution of At~l ns the spectra are smeared out,

indicating rapid wavelength shifts, which will produce (phase) noise in the laser diode

and reduce the coherence length. I I . I

no feedback

A v J\. I I I

BII BIO B09 wavelength (nm)

a) T1me-averaged output sperua or the )aser Cor a bias current. or 24.5 mA and no intentional feedback.

00 ~ Q)

c: Q)

00 c:

'in o Q) ~ u .5

(

increasing wavelength b) Time-resolved output spectra oelhe laser. The dat.a for this

figure Were recorded simultaneously with the recording of From it is apparent that the energy shifLS among the modes

This information is not obvious from the dat.a of

Fig. 3.1 - 6 Energy shifts among laser modes

In gain guided lasers more than one mode contributes usually to the output

which results in a shorter coherence length. This is desirable for video-disc players

([ 9).

The line width of single mode Ga AI As laser diodes is significantly larger than

the Schawlow-Townes formula for laser line width predicts (52). Assuming a

Lorentzian profile the coherence length can be predicted from the linewidth by

= 7T AV

with v = velocity of light in the medium and .1 \? the linewidth. For Ga AI As the

product of optical power Lo and Av is 70-120 MHz mW with 80 MHz mW most

typical and the coherence length can be estimated as rule of thumb as lC<m) = 0.8 Lo

(mW).

For distributed feedback lasers the overall thermal wavelength shift ii) is

reduced from 0.25 nm/K to about 0.07 nm/K (which may be due to lack of mode

hopping) (20). Temperature increases also linewidth and therefore reduces coherence

length.

f'~ 1'.-··;

i I

Page 68: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

VI OJ

+> .~

VI <::

.:':l <:: .~

OJ > .~

oj..>

'" ~

1 1

a)

" r 843

1l i 1h U i1h

__ ~'~I~IUJl1lul~I~I ______________ ___

I \ 1 12 i1h 1,3 i1h

1 ' I, "111""t!.uL~Wj~1u ... u II I I I I I 1

1,4i1h t6i1h

I I b)

84S nm 847 790 792 nm 794

Fig. 3.1 - 7 Typical spectra for a) index guided and b) gain guided laser diodes at three different drive currents (from (1)).

'" '"

Page 69: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 57 -

78or------------------.

E c::

~.

~.

o· •• 0 ...... ..

P=3mW Rf=Q.32 R,=O,32 l=2SO}lTTl ~ .. ;.-: ..

0-i·::·~ ..

/ (a)

770~2~0~--~3~0----~40~---750~

E c::

:c I-

'" Z w

785

u:\ 780

~

TEMPERATURE ("C)

P=3mW Rt=0.76 R,=Q96 l=250)lm

20 30 40 TEMPERATURE

(b)

50 (·C)

a) l..asin.: v.:a\·elen~th·\·s·temP<'r8ture cha~8('Lcristics under the et.Jnslnnt3-mW output power.

Fig. 3.1 - 8 Wavelength hysteresis effect b) due to changing current (from (22)).

b)

_ 775 E c::

Rf=0.32 R,=0.32 I =250)lm

(a)

~ E

01-=> a.. l­=> o l-

S :c §

E c::

772 0~--~20--~~40--~-6~cr~·

780

CURRENT (rnA)

Rf=0.76 R,=0.96

(b)

i= 779 ,.''': r:.r 0- r

'" z W ...J

~ 778 ~ L .. -··

777 0~~~2~0~~~4~0~~~60~

CURRENT (rnA)

~ E -

01-=> a.. l­=> o l-

S :c

'" ::;

Li~hl·('urrcnl chnracteristics and w8\·f"len~th·('urrent charactl'ri~tiC'S of typicnl VSIS la::oers.

a) due to changing temperature

i i.-

I

[

Page 70: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 58 -

.Monolithically Peltier cooled diodes are described in (20), and frequency

stabilization for heterodyne-type communication is described in (21).

Typical spectra from index guided and gain guided laser diodes are given in

Fig. 3.1-7.

Hysteresis effects in emitted wavelength as function of temperature or

current cycling is described frequently 00, (22), see Fig. 3.1-8.

3.1.2.3 Polarization

The active layer of a laser diode is built as a plane parallel wave guide and

according to the conventional electromagnetic model of the diode (3) two polariza­

tion modes exist: for the !ransversal !:Iectrical polarization, TE, the electrical field

vector oscillates parallel to the plane of the active layer, while in the transversal

magnetic polarization mode, TM, the field vector oscillates perpendicular to the

plane. TE and TM fractions of the polarizaiton are governed by the different

reflexion coefficients RTE and RTM, which are functions of active layer thickness,

index of refraction and index jump along the active layer. For DH-Iasers it is

RTE» RTM (4), which explains the strong TE-polarization in laser diodes (4). Laser

emission from DH-Iasers is generally not linear polarized 0) as shown by measure­

ments. Investigations for index guided and gain guided laser diodes indicate, that the

emitted radiation from comercially available laser diodes is at least 7096 linear

polarized and neighbouring modes show identical polarization. Figure 3.1-9 shows the

polarization properties for three different current levels above threshold and Figure

3.1-10 shows the polarization of three adjacent modes. In each case the intensity for

0= 00 (polarization parallel to active layer) is largest 0).

Page 71: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

Ul Q) .~ ..., .~

Ul <= Q) ..., <= .~

Q) ,.. .~ ..., '" ~ Q)

'-

90· /

'"

O· e

90·

;,1.95 ;Ih

;,1.60 hh

i,1.11 ilh

Fig. 3.1 - 9 Polarization of laser diode output at different current levels (from (1)).

-- ;;;;m l;~: ';'~-:--- , l ___ _

.h793.34nm

.h 793.17nm

,1.,793.00nm

I I 1

90· O· 90· ( e ')

Fig. 3.1 - 10 Polarization of three adjacent longitudi­nal modes (from (1)).

,-,-,,-.-, . ~~:

CJ1

'"

Page 72: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 60 -

3.1.2.1; Angular Characteristic

The small geometrical dimensions of the active layer (thickness 0.2 - 0.8,.", ,

width 1.5 - 20 l"'" , length 200 - 8001'''' ) provide a very compact radiation source

with a typical emitting area of 0.3 - 16 l"',.,;2 .•

Laser diode geometry causes diffraction and typical divergence angles are

30-500 perpendicular to the active layer and 5-200 parallel see Fig. 3.1-10 and

Fig. 3.1-12. A laser diode shows stable radial characteristic if for injection levels 1 =

21th no shift in the maxima of near -and far field characteristic are observed and no

redistribution of intensity distribution and beam divergence are obtained (1;).

Index and gain guided laser diodes show different angular stability. From 18

index guided laser diodes only two showed instable characteristic, while from 12 gain

guided laser diodes four were instable at higher currents. Instable laser diodes show

also the tendency to oscillate at higher transversal modes and/or show (longitudinal)

mode jumping, which can sometimes be observed as "kink" in the power current

characteristic.

3.1.2.5 Optical Power - Injection Current (Diode Characteristic)

Index guided and gain guided diodes show - apart from stability - different

features 0) for the onset of laser action:

ig: 15;:!! ith* 85 m A

gg: 75~ith~175mA

and spontaneous emission is higher for gg-Iaser, see also Figure 3.1-13.

Although present lab technology permits cw- laser operation of up to 50 and

200 m'W typical commerical powers are 1-15 mW. For I mW at I t< ... t the power

density is 108 W /cm 2 which would approach the highest permitted power densities for

pulsed operation 00 ns at 10 Hz repetition rate) of high quality of dielectric mirrors.

Good metal coating mirrors permit 100 W /cm 2 - 1000 W /cm2 and the absorption of Al

around 800 nm may prevent usage of AI-coated mirrors.

Page 73: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 61 -.

II

~ .~

VI <=

r OJ +' j. t8S ilh <= .~

OJ j. tSO ilh >

.~

+'

'" ~ j. tlO ilh OJ S-

30° 15° 15° )

Fig. 3.1 - 11 Far field laser beam divergenz for index guided laser (from (1).

II 1..

J _______ j,l}O i1h _____

j, 1.30 ilh .~

VI <= OJ +' j, 1.05 ilh <= .~

OJ >

j, 0.90 ith ...., '" ~ OJ s- I

30" I I I i

I I I i 30" 15° 0° 15° 15° 0" 15° 30°

)

Fig. 3.1 - 12 Far field laser beam divergenz for gain guided laser (from (1)).

I I

~':j

! :: f:":

i -

I

I ,--,

I h~ 3D"

Page 74: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

3r- t 6

2 LD ~ 4i / LD 1 +' +' :::J :::J

.B-2 0-+' :::J :::J 0 0

'- '-OJ OJ 25 50 Vl 50 100 150 Vl

'" '" ~ ~

r2~ 161 - / emission

L/.w:t LD 5 4j ~/ LD2

L /mW

2 , spontaneoUS

I --/'/

50 100 150 50 100 150 current i/mA ) current ilmA----?>

I 9 6

6 LD 6 l / LD3

3 2

a) I ::! I I b) 50 100 150 100 200 300

Fig. 3.1 - 13 Power/ injection current characteristic for three laser a) index guided b) gain guided

(from (1)).

en N

Page 75: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 63 -

3.1.2.6 Aging, Drift, Deterioration

Aging is noticed by the shift of threshold current to higher values and shift of

the emitted spectrum to larger wavelengths at constant temperature of the heat sink

(1), while threshold current increases. Aging may be caused by various effects,

including migrating crystal defects ("dislocations") in the resonator volume ([6),

mirror degradation induced by photochemial erosion, harmful moisture or vapour (17)

and aging of the electrical contacts at the heat sink.

The optical power output at constant current and temperature of the heat

sink has been investigated for 18 ig-lasers (1), (18) of which 16 showed very little

deterioration. From 12 gg lasers 8 showed little change over time, see Figure 3.1-14.

Estimated deterioration rates are from this figure in the order of 9:: = 10-20 n W /h.

Barry, who also describes deterioration with an Arrhenius function, gives a value for

the threshold current shift due to aging of 1t = IfA/h, which would result in

.5 .. W /h if the operating efficiency is assumed as 0.5 W / A, see 3.1.2.1. -Lifetime

of laser diodes has dramatically improved over the last years (about factor 2 per

year) and only newest data should be trusted. Rates published 1980 (19) claim

changes of 10% of Ith for 103h for uncoated cleaved laser facets and 1 % for A1203

coated facets.

The data provided are only accurate enough for a rough instructive estimate.

Assuming for LD5 a deterioration rate of 12 nW /h at a power level of 12 mW gives an

estimate for the time of 106 h before the power has dropped to zero. This number is

in line with modern (i 985) laser diodes. For a resolution limit of an intensity sensor

of 10-4 this power change is reached within 102 hours.

Temperature increase reduces the lifetime considerably (Arrhenius-function):

T = + 30 K reduces the lifetime by factor 15 (26).

3.1.2.7 Noise

Intensity and frequency fluctuations are observed during the operation of

laser diodes and the noise maximum at threshold can be used to determine the onset

of laser action. Relative noise power is defined as 20 log (dL/L) where L is the laser

intensity, dL the rms fluctuation of intensity and a 10-5 intensity fluctuation

corresponds therefore to a -100 dB noise. Results are subsequently normalized to a

bandwidth of 1 Hz for comparison reasons. Figure 3.1-15a,b shows the noise increase

i I

I

i L.

i i •

I i i

!

Page 76: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

L • 3: 4 E 0-::> 0- 3 0-::> 0 a:

2 w 3: 0 0-

00

L

i

- 64 -

15-

mW LO 5

~.-·--.-.--11-&.- .. -.-.-.-.-.-. 10-

LD 19 --0--0-0_ 0 __ 0_0 -0-0-

0_ 0 -0-

L07 -0-_0_0--0-5- 0_0_._. -.-LO 3 --. '--'-'-'--' -'-

i03

. --. --"

i04 h )

i.ll0 mA

i= 120 mA

i·115mA

i=250mA

Fig. 3.1 - 14 Power loss of laser diodes over time (from (1)).

'" " -0. UJ -100

'" (5 Z

0 -100

" 0 " UJ > ;::

w 0 -110 "' 0 0

z

< -120 ... UJ a:

0 -120

0

0

00 -130 ,. 2. 3. 40 o. 10 100 1000 10000

CURRENT mA FREOUENCY Hz Power output and absolute value of the intensity noise (arb.

a) units) as a function of laser driving current for I.he Dii laser. b) Frequency dependence of the intensity noise (1 Hz B/W) of the three lasers tested: ., T JS: 0, CSI·; 0, D II.

Fig. 3.1 - 15 Noise of laser diodes a) around threshold b) as function of frequency (from (23)).

Page 77: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 65 -

around threshold and the frequency dependence. For frequencies S 1Hz no published

data are available; this is however the region of greatest interest for the pressure

sensor.

Noise from back and front facet are only partly correlated (23). It is believed

that noise is generated within the neighbourhood of the laser cavity due to local

current and temperature fluctuations which create scattering centers and destroy

momentarily the fixed phase relationship of a wave train. Lattice mismatch at the

heterojunction interface might be part of the cause, a smaller change in Al­

concentration might then reduce the problem and quaternay structures (used for 1.3

and 1.61"'" band) may completly avoid the problem (23).

Current modulation (2 - 4mA at 50 - 200 MHz) has been used (24) to reduce

noise levels by as much as 20 dB. The higher frequencies give the better results. The

current modulation results in a frequency modulation of the laser spectrum, which

leads to an interaction between the modes (including modes from different cavities).

Similarly it is conceivable to modulate the external radiation field in case of back

reflection. Times for longitudinal mode switching is reported as 10 - 20 ns (25).

Diode manufacturers suggest similar current modulation frequencies for noise

reduction. Note that the suggested modulation frequencies fall within typical line­

width of semiconductor lasers. There will exist an upper optimum modulation

frequency above which the noise can not be reduced. The coherence length will be

effected and influence on drift and low frequency noise should be investigated for the

sensor.

Noise may be caused by the interaction of several modes. Typical intensity -

ratios in "single mode" lasers between main mode and satellite modes are few

percent. Mode competition noise is largely suppressed by a laser described in (22),

where the satellite intensitities are suppressed to 1:1250.

i I , .

[

I !

, , L.

!: i:'-:: t:::".:

Page 78: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 66 -

3.2 Laser Diodes Under Optical Feedback

The usage of laser diode properties modulated by an external reflector as

sensor has been suggsted as early as 1976 and this scheme has been since investigated

(15), (26) to (1j.9). A recently renewed interest comes from the communication

industry where the need for a reduced linewidth becomes more and more important,

and where back reflections from fibre ends disturb proper laser performance (1j.8).

Early theoretical models considered only the intensity of the light reflected

back into the cavity (29) by introducing an "effective reflectivity" for one laser facet

and investigating the effect of changed photon density (or intensity) on laser gain.

Cassidy (15) distinguished coherent and incoherent back reflection and finds small

amount of incoherent back reflected light im portant for the laser output. Acket et

al (1j.7) and Hammer (1j.9) have presented very recently models and approaches, which

regard the characteristics of light (intensity, phase) and include complex laser

structures (1j.9). Not included so far are geometrical aspects of the beam (beam

diffraction), and realistic photon lifetimes in both cavities. The theoretical analysis

of laser diodes operating under feedback has only. in the last few months approached a

state, where the models will provide useful information on any experimental situation

including laser diodes and backreflection.

The phenomena induced by optical feedback are numerous, and many of them

seem to contradict each other: wavelengths shift (27), induced mode jumping (50),

noise increase (37)(?0), noise reduction (37), linewidth reduction (to 30 KHz)

(32),(33),(3Ij.),(1j.5) and broadening (3Ij.)(36), oscillations or self pulsation of output

power (36), wavelength stabilization (3Ij.),(29),(30),(31),(1j.5), low frequency wavelength

instabilities (32),(31j.) (phase noise), hysteresis and bistability (27).

Some of the phenomena listed do not permit a simple interpretation (27). A

possible reason may be the use of lasers of immature technology which showed

transversal instability, oscillated in multilongitudinal modes and did in general not

have the highly stable performance of present technology lasers. In addition some

general laser features "invite" complex behavior of laser diodes under feedback:

Page 79: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 67 -

i) a broad gain spectrum, typically about 5 nm, permits the develop­

ment of several longitudinal modes; inter modal energy swapping

has been identified as major phase noise source.

ii) sensitive dependence of refractive index on temperature (51);

iii) strong dependence of active medium refractive index on the

excited carrier density.

Both iil and iii) explain high temperature sensitivity of the laser and

wavelength shift.

Theoretical investigations of the influence of optical feedback on laser

performance concentrate on a) power variation, b) wavelength shifts c) noise

generated in steady state and dynamic conditions. The latter indicates also the

stability of a steady state. The cause for the effects can be traced back to variations

in the refractive index in the active layer due to thermal effects (for low frequency

changes) or carrier densities (at high frequencies). Several authors introduce a

feedback parameter "e" which allows some classification of the observed effects and

some interpretation:

(

Where "f" is a fudge factor to describe inaccurate focusing of the backreflected light

on the laser facet «117) f=0.16), "b" is the ratio of changes in real and imaginary part

of the index of refraction of the active layer (-0.5 ... -11.6), caused by the current

changes J 'Le the photori round trip time for the external cavity, tot photon lifetime

(inaccurate, see (4-5)) or round trip time in the laser cavity, "R" laser facet

reflectivity (0.32) and "r" the power reflected back (range probably: <10-8 <r< 0.251.

The last bracket describes the intensity of the interacting light, (or more

accurate: the electric field amplitude of the light coupled back to the laser), the

first likely an additional phase shift and 'reo / 'Tel is a measure for the numbers of

modes involved, and can vary according to experimental conditions over more than 11

orders of magnitude.

[

r r-,.

i

! .

I

I

l.

I

l

I" "

Page 80: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 68 -

The laser active medium acts as a light amplifier increasing the light best

suited for the gain profile. These light properties can be dominated by the laser

cavity or by the external cavity. Especially for 'reo > "t,more modes are provided by

the external cavity, which permit intermode coupling.

Three cases are distinguished:

C < I, encountered for small external cavities, even at high power levels of

backreflection (r< 0.25) (Operation of laser diode sensor).

With a phase variation between the interfering light fields from laser and

external cavity a sinusoidal wavelength increase is obtained which goes hand in hand

with a decrease in power and vice versa. Wavelength shifts are "small" (observed: 2-

8 nm for a phase difference between ?-tIl. o. .. J A/~ (lJ.lJ.).

C - I larger wavelengths shifts with jump; instabilities around "jump" phase angle,

noise spikes ( lJ.3 ); power fluctuations are to be expected.

~ best investigated, because ~ » 'lit permits usage of additonal components,

situations encountered in most sensors and transmission networks; with monotone

increases and decreases of the phase over more than 2-n it is observed: bi-stability

(lJ.7)(27) hysteresis (lJ.Z)(27), power- and wavelengths jumps (lJ.7), self-modulation (lJ.2)

and undulation of the L-I characteristic, (lJ.2), (27), correlation between noise and

undulation (27). Self-mode locking is predicted (lJ.lJ.). In this regime falls also an

extensive investigation on noise properties and noise reduction (by 30dB) (lJ.1). The

investigation indicates favourable conditions for shorter cavities.

Summarizing: an external cavity laser diode sensor should operate in the C < I

parameter field, favouring short external cavities and reduced laser facet reflecti­

vities.

Noise reducing techniques operating around 50-70 MHz can be applied for low

frequency applications such as the laser diode sensor and can improve the signal to

noise ratio by up to 3 orders of magnitude.

Page 81: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 69 -

o Co ~O'NEA SiJPPL Y

F'.'I,r lIoII'liQOR

PHOTO-CELL

I . . XV-RECORDER 1----f--·.---.. .J

MONOCHRO­MATOR

. COUPi..ING CIRCUIT

Block diag:ra-m of the experiment.

-9

C~~I7~O~-~IM~-~1~90~-~2~OO~ CURR[N~ (mA)

b)

a) OUIi'U1 \"l"r~u!, ,UfJcnt l"Uf'\l'!/. wi:h :Jnd witlhlUl l':\!crnal fl'l't.l·

b:u·\;. IIr!iih:rl'l<>i~ i!ii ~t'l'lI Ul Ih:.l1 wilh fCl'dh;u:k.

(from (27))

• ,

; . .D~ , .

• a

"0 no "" "'" CURRENT (mA)

Spectral changes and output undula.tion with current increase. LR is greater by SO jJ.m than the nearest intcgr:ll multiple of LD-

W,'" FEE[)8.&CK.

(from {27))

''''''' c) Sp.:&:tI.J1 t.:h.:.m!X'Ji and \Iuqlul undubtiun "ith current incfcOlsc

when I'N 1.'t1u;Jb,:.an inll.'~r:.ll multirlr.: uf /'0'

(from (27))

Fig. 3.2 -b) and c)

1 Change of laser characteristics under feedback spectral changes

a) hysteresi 5

I

I

I !

i i

Ic_ L--",.

k

Page 82: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 70 -

'0' B\:'~ CU~g~"'1 It (m':';

a) 111(' tr:lpsi.:m outpUt rc:;ronsc to :l current pulse :Jt \'arious points on th~ um.lu!:.Jh:d /.-/ cuh'C'. Pub,~' hcil:hl W::IS 32 rnA. whit:h ",":IS sur~'riml'll~l'd lln th ..... ok bi:.s l'UTh.'nt. •

) r-.h'a~un'lll)htll"('tlrrl·lIt V!'i !:as,'r hi' Ii!',·, .Iistal,,"" : lilT a 111111 jl~JlL . Thl' Ilhllh ... ·urn·1I1 is I'Tnl"lrl illll:lllllllll' laS4'r n':" fan'I,".1 Pllt

,11I\\'I'r •

a. FREE RUNNING 1..s.r. 900 MHz

0.4 ! 0 .0.4 0.6 0.2 0.2 0.6

l'-"~' l.s.r. 66 GHz.

t I

201001020

c. 0.06", FEEDBACK f.s.r. 66 GHz.

2010 0 10 20

j 1'1 I I 'l ~.~ . • ' .~ J I-,".-.. ... y ....

d. 0.20:, FEEDBACK

1.s.r. n GHz.

200204060

.' e. 0.3'7, FEEDBACK

/ , 2010Ql020

GH.

1.s.T. n GHz.

b) Fa.bry Perot spectra of the CSP laser diode for varying amounts of optical feedback. The data were obtained using a vari­able frcc·spectral range.

Fig. 3.2 - 2 response b)

Change of laser line broadening

characteristics under feedback a) transient c) required output form for laser diode sensor

Page 83: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 71 -

3.3 References

1. A. Abou-Zeid, "Spektrale Untersuchungen an Kommerziellen Ga Al As-Laserdioden". PhysikaJisch-Technische Bundesanstalt, Bericht Me-56, ISSN 0341-6720, Braunschweig - West Germany, 1984, in German.

2. F.R. Nash, J. Appl. Phys., 114(973), 11696.

3. R. Lang, Jap. J. Appl. Phys. 16 (J 977), 205.

4.

5.

H. Kressel, J. K. Butler, "Semiconductor Lasers and Heterojunction LED's," Academic Press (J 977).

Bell Northern Research intern training course on "Fibre Optics"; printed course material, 1981.

6. W. Schmid, B. Flade, K. Hoeing, R. Eggert, "A Precise, Programmable 850 mm Optical Signal Source", Hewlett Packard Journal, 36, J(J 985) 7.

7. Private communication, C. Look, Northern Telecom, Corkstown -Ottawa/Ontario. P.O. Box 351 Station C.

8. NEC Laser Diode - Application Manual, AN8280 I, California Eastern Laboratories, Santa Clara, CA 95050.

- 9. H. Weber, G. Herziger, "Laser - Grundlagen und Anwendungen".

10.

11.

12.

13.

Physik Verlag GmbH, Weinheim/Bergstrasse, West Germany, 1972, in German.

R. Daendliker, "Laser Kurzlehrgang", AT-Verlag, Aarau-Stuttgart, West Germany, 1981, in German.

J.D. Barry, I~EE QE 20, 5 (9811) 478.

Zachos, Ripper, IEEE QE 5, 29, (969).

M.J. Adams, M. -Cross, Solid State Electronics, III (971) 865.

Ill. T.L. Paoli, IEEE QE 16, 7 (975) 489.

! i­( --;

Page 84: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 72 -

15. D.T. Cassidy, Appl. Opt. 23, 13 (984) 2070.

16. H. Kressel, H.F. Lockwood, J. Phys. Suppl. 35, C3 (974) 223.

17. F .R. Nash, R.L. Hartmann, IEEE QE 16, 10 (1980) 1022.

18. A. Abou-Zeid, "Physikalisch Technische Bundesanstalt Jahresbericht 1981", p. 128, Braunschweig West-Germany 1981, in German.

19. L.J. van Ruyven, "A Semiconductor Laser for Optical Disc Systems", Solid State Laser Development E1coma, Philips Research Laboratories, AA5656 Eindhoven, The Netherlands, No. CQL-Il/80, 1980.

20. S. Hava, R.G. Hunsperger, H.B. Sequeira, J. Lightwave Techn. LT-2,2 (1984) 175.

21. T. Okoshi, K. Kikuchi, Electr. Lett. 16, (980) 179-181.

22. S. Matsui, H. Takiguchi, M. Taneya, O. Yamamoto, H. Hayashi, S. Yamamoto, S. Yano, T. Hijikata, Appl. Opt. 23, 22 (1984) 4001.

23. A. Dandridge, H.F. Taylor, IEEE QE 18, 10 (1982) 1738.

24. K.E. Stubkjaer, M.,B. Small, IEEE QE 20, 5 (1984) 472.

25. M. Ito, T. Kimura, IEEE QE 15 (1979) 542-544.

26. "CQL I 0 Semiconductor Laser for Information Readout". Electronic Components and Applications 3, I (1980), Amperex Electronic Corp., Slatersville Div., Slatersville R.I. 02876.

27. R. Long, K. Kobayashi; IEEE QE 16,3 (1980), 347.

28. A. Dandridge, R.O. Miles, T .G. Giallorenzi Electr. Lett. 16,,25 (1980) 948.

29. C. Voumard, R. Salathe, H. Weber, Appl. Phys. 12, (1977) 369.

30. C. Voumard, R. Salathe, H. Weber, Opt. Comm. 13,2 (1975) 130.

Page 85: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 73 -

31. C. Voumard, R. Salathe, H. Weber, Appl. Phys. 7, (1975) 123.

32. L. Goldberg, H.F. Taylor, J.F. Weller, Electr. Lett. 18, 9 (982) 353.

33. L. Goldberg, A. Dandridge, R.O. Miles, T.G. Giallorenzi, J.F. Weller, Electr. Lett. 17, 19 (1981) 677.

34. L. Goldberg, H.F. Taylor, A. Dandridge, J.F. Weller, R.O. Miles, IEEE QE 18,4 (1982) 555.

35. L. Goldberg, H.F. Taylor, J.F. Weller, IEEE QE 20, 11 (1984) 1226.

36. R.O. Miles, A. Dandridge, A.B. Tveten, H.F. Taylor, T.G. Giallorenzi, Appl. Phys. Lett. 37, 11 (1980) 990.

37. R.O. Miles ,A. Dandridge, A.B. Tveten, T.G. Giallorenzi, H.F. Taylor, Appl. Phys. Lett. 38, 11 (1981) 848.

38. S. Saito, Y. Yamamoto, Electr. Lett. 17,9 (1981) 327.

39. A. Olsson, C.L. Tang, IEEE QE 17, 8 (1981) 1320.

40. K.E. Stubkjaer, M.B. Small, IEEE QE 20,5 (1984) 472.

41. T. Fujito, S. Ishizuka, K. Fujito, H. Serizawa, H. Sato, IEEE QE 20, 5 (1984) 492.

42. N. Ogasawara, R. Ito, T. Sasaski, T. Osada, Jap. J.Appl. Phys. 21, 10 (1982) 1465-1471.

43. S.J. Chua, T.C. Chong, IEEE QE 20, 11 (1984) 1243.

44. T. Kanada, K. Nawata, IEEE QE 15,7 (1979) 559.

45. F. Favre, D. Ie Guen, J.C. Simon, IEEE QE 18-10 (1982) 1712.

46. G. Wenke, Y. Zhu, Appl. Optics 22, 23 (1983) 3837.

47. G.A. Acket, D. Lenstra, A.J. den Boef, B.H. Verbeek, IEEE QE 20, 10 (1984) 1163.

[ i I

Page 86: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 74 -

48. W. Bludau, R. Rossberg, Appl. Opt. 21, 11 (1982) 1933.

49. J.M. Hammer, IEEE QE 20,11 (1984) 1252.

50. J.W.M. Biesterbog, A.J. den Boef, W. Linders, G.A. Acket, IEEE QE 19 (1983) 986-990.

51. Landolt Boernstein, Numerical Data and Functional Relationships in Science and Technology, New Series Group III Vol. 18, Elastic, Piezoelectric, Pyroelectric, Piezooptic, Electrooptic Constants and Nonlinear Dielectric Susceptibilities of Crystals, Springer Verlag Berlin 1984.

52. R.C. Youngquist, Appl. Opt. 24, 10 (1985) 1400.

53. A. Mooradian, "Laser Linewidth" in "Physics Today" 5 (1985) 43.

54. C.O. Weiss, private communication, Lab. 1.22, Physikalisch Technische Bundesanstalt, 0-33 Braunschweig, West Germany.

Page 87: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

l .

I I ..

i··-. , .

Page 88: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 75 -

4. EXPERIMENTAL BENCH MODEL SENSOR

Objective:

i) The Bench Model Sensor (BMS) has to demonstrate the technical

in

feasibility of an optical feedback laser diode sensor applied to static rather

than dynamic situations, as having been demonstrated to date. This includes

the demonstration, that indeed the elements required for the construction of

a unique and monotone sensor calibration curve, as described in details in

Section 2.1, "General Properties of Interferometers" can be obtained in

measurements.

The BMS has to provide sufficient evidence, that the technical

specifications given in "Introduction" are feasible for short and long term

applications.

4.1 Design Considerations for the Bench Model Sensor

Objective:

This section summarizes the operational concept of the BMS system as well

as derives key parameters for the development of subsystems.

4.1.1 Operational Concept of the Bench Model Sensor

The BMS is d«:signed to allow both measurement of displacements less than a

fringe providing with one measuring channel a unique calibration curve, as well as

tests of displacements involving several dozen fringes. The basic operational concept

is given in the block diagram Fig. 4.2-1. The solid blocks have been used during the

tests described in Section 4.5 and 4.4 while dashed boxes represent subsystems which

did not become available during the project. Housing and membrane design were to

be tested at he next stage of the development, as indicated in the "Introduction".

The effect of pressure moving the external mirror is simulated by the combination of

a mechanical translation stage, see 5.1.3. The laser diode current is supplied by a

high quality constant current source which is specifically developed at SEAST AR

INSTRUMENTS LTD. for sensor applications. A temperature control unit did not

become available. A precision thermometric circuit developed for this application

provides temperature readings from the laser diode heat sink with a resolution of

about I mK.

Page 89: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

r-------, I housing & 1

~~:.m~;~.:_J

pressure simulator. calibration

r - ---------, I noi se reduci ng : I RF-modul ator 1

I 1-100 11Hz 1 '-----r --u...J

i i

constant current source

power supply , (battery)

photodiode rprp;ver I-__ -I~I optical feed-, I

• back laser ._ diode module ~------'

temperature measuring (cont ro 1 )

A I I

1 r--------, : wave length ; 1 control 1 1 _______ ...J

DC offset

integrator. low pass fil ter 1--.---11 osci 11 oscope

• T ~ 50 ms

r------~ r------, ;low noise: I AID 1

L -I front end (- - -~ converter : - - -L~m~if~e~J L_l~ bi':'_J

~ chart recorder T ~ 50 ms

r -- -----"j 1 data 1

- .. processi ng. : : display I L _______ J

Figure 4.2-1 Block diagram of the optical feedback laser diode bench model sensor .

. )::~ IT;;: ,.

...., '"

Page 90: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 77 -

The photodiode receiver provides the demodulation for the analog signal (see

2.1.3) which is - if necessary processed - displayed for time scales T =- 50 ms on an

oscilloscope with a maximum sensitivity of ImV/div or for T2: 50 ms on a chart

recorder with full scale sensitivity of I mV.

The analog DC measurements of low signals (mY) at a high bias level of

several volts proved cumbersome due to (thermal) drift. An alternate route

consisting of a signal conditioning front end analog amplifier, a 16 bit AID converter

and a data processing and display group was in a planning stage.

4.1.2 Key Parameters for Subsystems

The following considerations provided the data necessary for the development

of the low noise conltant current source and the thermometer: A theoretical model to

predict signal levels did not exist; the published output forms (J), (2), resembled the

output of a two beam interferometer and for simplicity a linear relationship between

displacement and change in output power was assumed for the calibration curve

resolving parts of a fringe. Typical output power changes of few mW have to be

resolved to better than 10-7W. A pin-photodiode (RCA silicon high speed, C30920E)

has a responsitivity (at" = 830 nm) of 0.6 A/w, providing a resolution of 6 X 10-8 A

(and smaller). Under experimental conditions a dark current of 1.5 X 10-8 provides

an offset while noise density calculations indicate a noise contribution of about

(6.2 X 10 -3 nA) and will not be significant.

Comparing the optical power changes to be resolved by the sensor with power

changes induced in the laser diode light source by a change in forward current I or

active layer temperature T, we obtain with literature data and the formula presented

in Section 3 the permissible limits AI = 10-7 A, AT = I mK. These numbers exceed

specifications for communications application, where 4T ~ 0.5 K is acceptable and

compare well with performances achieved during the development of precision

sensors (3) and - laser performance evaluation (4), (5).

The modulation for noise reduction should operate at frequencies in the range

10 MHz.c.t\ '4-00 MHz and permit a modulation of the undisturbed laser power Lo of

LI 1.0 ILo = 10 - 50%. This corresponds for an operating efficiency of 0.5 wI A to 5

-10 rnA current modulation.

Page 91: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 78 -

4.2 Supporting Systems

Objective:

These systems control the environment of the sensor, provide: alignment aids

for the invisible IR radiation, pressure simulation and calibration, stabilized low noise

constant current for the laser diode and measure the temperature close to the laser

diode.

4.2.1 Laboratory Characteristics

All tests are carried out in the optics laboratory of SEAST AR INSTRUMENTS

LTD., which is for this purpose specifically equipped as follows: A Micro-G Vibration

isolation table (Technical Manufacturing Corporation, USA; top dimensions: 8 X 4

feet; 8 inches thick) rests isolated from the building in ground floor level on its own 5

ton conrete fundament. The low 2 Hz resonant frequency of the table damping

system reduces walking noise in tests with a calibration hydrophone by more than a

factor 30 and reduces the damping time to by more than a factor 4.

Shelves are suspended from the ceiling above table center, which keeps 50 Hz

humm from electrical instrumentation off the table top for the sensitive

measurements.

The lab is built as a one layered electrically shielded room with metal door,

screened air inlet/ outlet and a single electrical ground point.

Electrical power is provided through a noise rejecting isolating transformer.

The laboratory door is provided with a combination lock for safety

considerations.

4.2.2 Visual Aids

The IR radiation for the laser diodes used for the tests falls into the near

infrared region, 780 - 850 nm and is only at relatively high power levels visible for

the human eye. Laser operating personnel is instructed to wear protective eyeglasses

for safety reasons.

Phosphor screens, converting IR to visible light if previously exposed to UV

light, are used for beam alignment. A B&W TV camera/monitor system is installed

(Sony Electronic Viewfinder AVG 3200), which is sensitized to IR radiation and used

in connection with a stereo microscope (Wild, M7A) with camera adaptor to monitor

I

I:

I L,

j. I

Page 92: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 79 -

alignment of laser, photodiode and mirror. The total magnification of microscope,

TV camera and monitor is 255 X and dimensions of about 51'm are resolved.

~.2.3 Pressure Simulation

The displacement of the pressure sensor membrane and the mirror attached

to it are simulated in the BMS by the movement of a translational stage (DaedaI)

which is magnetically coupled to a combined piezoelectric/mechanical micrometer.

This permits a jerk free movement of the translation stage over 2.5 cm with a

resolution of better than 25tt m by the mechanical micrometer. Fine adjustments in

the position are carried out with the piezohead (Burleigh, PZ ~O) providing a

maximum scan over 18 ~m at 1000 V input (Burleigh PZ 70 Power supply, HV Op

Amp). The translation stage supports a mounting platform with a second

piezoelectric pusher (PZ ~O, Burleigh) which contains the mirror element. The

mounting platform can be adjusted in 3 angular dimensions to align the mirror surface

plane parallel to the laser facet.

Hysteresis and drift of the PZT elements require careful considerations

during the measurements. The piezoelectric pushers are characterized in two sets of

experiments. Hysteresis is investigated incorporating the PZT elements in a

Michelson interferometer using a He-Ne laser (i\ = 632 nm) as light source, counting

the fringes as function of the applied voltage. Results given in Figure ~.2-2, show the

hysteresis and indicate an average displacement of l}'l'" per ~0.2 V applied to the

PZT element.

A second experiment is carried out with the BMS, increasing only the

distance and measuring the required voltage increase to the next maximum and

minimum. Averaged over ~~ fringes (corresponding to ~~ X 11/2 = 18.~ /'1m) a

displacement of ll"m requires 5~.5 ! 30% volts. This compares reasonable with

dynamic measurement giving 53 V / m.

The results presented show that stacked PZT elements can not be

incorporated into the design of a high precision pressure sensor without problems. It

is however, possible to correct electronically for non-linearities (IO), (II).

Noise of the commercial PZ 70 power supply of more than 80 mV-pp limit the

positioning accuracy of 1.5 nm at best.

Page 93: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

FRINGt:S pm

30-1

9 28

26t8

24

22 ~7 20

6

18

16 J..5 14

I

4 12

10 t 3

8

61-2 4

2

o 50

-~):::~

I

I FRINGE f;{ 1 = 632·81 , nm 2 2

100 150 200 250 APPLIED VOLTAGE

F:- ,"";.,,~-;-- '~:'." ';,: r-'

Fig. 4.2-2 Hysteresis and displacement of stacked PZT piezoelectric pusher (Burleigh Pl 40).

300 350 400 450

::::;::::; ~~---- ----::~j

ex> o

Page 94: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 81 -

4.2.4 Current Source

A constant current source has been developed to provide low noise, stabilized

currents up to 200 rnA for laser diodes. Power is provided by a 12 V gel cell and the

input power is thoroughly filtered to prevent surges to reach the sensitive and fast

reacting laser structure. The current is dialed up by a precision potentiometer which

is calibrated in a calibration curve. Presently o.ccasional noise bursts can reach 10

tJA. The circuit diagram is given in Figure 4.2-3.

A new constant current source is designed providing HF-modulation

capability at MHz frequencies for noise reduction, low frequency modulation for

temperature stabilization or optical power stabilization, a 100 nA noise floor and 412-

digit readout.

These data compare favourable with those achieved elsewhere (4) where a

digital nanovoltmeter (Schlumberger Solartron 7075) and a (Hewlett Packard) A/D

converter are incorporated in the current control scheme which provides a laser

current resolution of 100 nA, fluctuations over several hours ~ 150 nA and long term

fluctuations of -= 500 nA.

4.2.5 Thermometry

Threshold and emitted optical power of laser diodes are sensi ti ve functions of

the active layer temeerature, which has to be regarded for the application in sensors

of high sensitivity or applications involving heterodyne or homodyne techniques. The

temperature can only be deducted, either from j) changes of the laser performance

due to external stimuli such as pulsed operation or ii) from measuring temperature at

a spot close to the active layer. The latter technique effects laser performance only

little and is preferred.

In a steady state the temperature decreases from the "hot" active layer

through different layers of the laser structure to the "cold" heat sink, which by itself

may consist of a combination of a diamond or Si crystal heat sink mounted on a

passive Cu-heat sink and/or a thermoelectric (TE) cooler. Any point between the

"hot" active layer and the "cold" heat sink can be used to characterize the laser

Page 95: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

+12

IK2

1/2 + +

560 122 2'5V"1 10/25 10K

Fig. 4.2-3 Circuit diagram of laser diode constant current source.

" ::::;i~~ , .. ·i:."· . ~.' -;-,,-----.

BNC

VN" IRF 4K7

IK 20n

~F--~

ex> '"

Page 96: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 83 -

active layer temperature and therefore used as temperature reference point in a

feedback loop to stabilize the laser temperature. In this case the reference point

temperature is compared electronically to a chosen "set" temperature and the TE

heat sink regulated to obtain zero difference between set point and reference

temperature. For best performance of the feedback circuit the reference point and

TE cooler have to be kept as close as possible to the active layer. Stabilization of

the reference point temperature to D. T ....,1 ml( have been reported from various

laboratories (3) to (6). (6) reports difficulties to obtain good temperature stabilization

due to "bulky" components prohibiting the close contact between active layer and

reference point thermometer. Size, power dissipation, heat capacity and resolution

have to be considered in the choice of the thermometer. Electronic circuits AD 590

(3), (4), (6), thermistor (5) and thermocouple are possible choices:

Table 4.2-1 Comparison of Thermometer Properties

AD590 Thermistor Thermocouple

Size large medium small

Heat capacity large medium smaIl

Power large, I mW large/medium small

dissipation

Resolution good good good

Output I fA A/K, absolute current/voltage voltage

Form linear logarithmic linear

Page 97: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 84 -

The thermocouple approach indicates major advantages over thermistor and

AD590 device; the implementation of the technique proves however difficult as will

be seen in the next paragraph.

1J.2.5.1 Thermocouple Approach

Due to the thermoelectric (Seeback) effect the junction between two metals

(or semiconductors) provides an EMF ("voltage" output) characteristic for the metals

chosen at a given temperature. If two junction pairs A and B are connected in series

and junction B is kept at a known reference temperature TB the voltage measured

across the open end is proportional to the temperature difference T A - TB = AT. If

the junctions are made from thin wires of d = 25/" m diameter an extremely small

thermometer sensor results which can even resolve temperature differences on teh

laser diode surface (300 X lfOO ,.. m). The following operational scheme has been

suggested; Figure If.2-lf: The temperature T A (reference point on the laser diode) is

transferred to a larger body, reference block B, in the following way: The junctions

A and B provide at temperatures T A :f: TB a non-zero signal which is detected and

amplified in the "zero" detection amplifier and provides the control signal for the TE

driver 1, which changes with the TE cooler 1 the temperature of the reference block

to T A = TB: the temperature is "transferred" from the inaccessible laser diode

surface to a large block, where it is mesured by the AD590 electronic thermometer.

This output can be compared to a "set" laser diode temperature and a derived signal

controls the TE driver 2 and TE cooler 2 to keep the laser diode at the "set"

temperature.

The thermocouple system is designed to meet the following specifications:

The thermocouple junctions were to be soldered from wires approximately ~ = 251"m

at a length of t = 100 f'm and provide an output of 30 t' V /K {chromel-alume1l with

good linearity over -2 to + 300C and a resolution of 1 mK. The time response of the

system is to be 10-1 to 10-2 s.

The thermocouple amplifier uses a chopper stabilized "zero" detection

scheme and has been developed in cooperation with Sea-Met, Ottawa (7). All

components of the thermocouple thermometer scheme including the AD590 have been

built and tested as components, see circuit diagrams Figure If.2-5 to Figure If.2-7.

I t .

1 i I>

I l .. :

I

l

Page 98: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

"SET"

TEMPER­ATURE

- 85 -

A B LASER - REFERENCE DIODE BLOCK

• I I

I I

I TE I TE COOLER 2 COOLER I

• I I I I

TE "ZERO" DETECTION TE DRIVER 2 AMPLIFIER DRIVER I

-.-

Fig. 4.2-4 Block diagram for temperature measurement on laser diodes with thenno couples "A", "B" (--) and temperature control (---).

. AD 590

; I

I I

I I I I

Page 99: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

Jf"6V

r'., . &~~ J 7 ' "" -- ,~" ·10. ,-. • " A,

C • '<., ,~ " .., no ; -. ~:/o 'I~lc ~~;;,' --~:"rii' 8hJ"T,/" - (' ~ , c .• _ "c.':~I'. 1 l;filli "

_':\-0----- LJ,e.,-, ~Cl b/' ]1:_0_'. '~,1.,8 'r--J''-2 C.2~'" 2/

S

( , ->~-~,,-. "", '0 .1!'J(.~L~, ,--, !, "'iii' , . I ' " J '. , , S,~", ~y"'L --" ". <; '''. -AA' __ """ n. " __ ~, ", ..

8 _ .. ,n 'J --', 27./10 ~~~,~'~:o_ ~ SiR\'52~']l' "" ~7,K r", '17K L~1~ i c.t J

<. ~70 -., ~70 i I' --'" 1 ::rl

1.."'_>-----, :r~c..k". mC.II""'~I'S.

._~ ... , ~ ~

~ .6_ tC /. AIOuO::' po., '-;l;.,.,

S c I "1 10 ,<" ... R •

"

.~

,; loLL ~, 1 I eVo, IC'" ]<B

/,. ,,",I 1 I"" ,~ J" + '" , +' "cr-- IANT. 11

'°'"

~, -6 E ,Lt,i!>a ~ 13 ,~~ 4

I - » P.J3 , ~L'

i Bl - ~ 1--.1

4 I c.9 :.... <r C' C/5"J, .711~TI.o.I(l l- . (. , " 11 I""'T 1/16 • 17

5,'; . ,': I ~."C T -ll.0~ o 6 ... 0<" ')O,~_'-_L. -

A'. • 0 .... '~O('J' J; ..... vll:..

V3~ 1(..6 T~ ,-:..8

1(1 TO Ie.", ;"-"'-}-1'-1-1

I II II -b, I I L_L .. 1

f:.1;·,' ...... ~ /.:..l To I{.~ wlTtl .1/-:'0 ~ ,111,)",,1< -:. '~1,.. ...

C. ",-'-'Nil '''0,,·1'

! <.'2..71'\

l~ L·~-~h

t --- ------' "11 221< ~~ i VoCl

--21'f~ .0 £,e..", : H/~~~_~~~~

v"

(.7

SO~ Kit 6awRI°w.

= 1.o" ~701~

1 I '5 EA sri i<.. /"g7f.'""O.lT"; . \ls~

-

G.S....,Q,

.:rJ 130~"f'CI

flN<- c,.r.

C6 T .1/"

1:,<"''''<'00'0< A,"'P. 11'1 ..... 1183-71-

Fig. 4.2 - 5 Circuit diagram for thermocouple amplifier

;;:::" '::"':

co en

Page 100: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

I i

I S"llL .... n u oN( INPuT

J,

TIl. "

RI OC'<>

L~Gl 1 I I..1

31'+-.J, -1(.\.... -

" .1

., lOt{ :

R. ~1<7

I:~t HU

Q> R. I"

'l'llvLJc.

-'-1 O~

TIP 12.0

R, .. I .J\..

j .::J"'l.. PI .fj,.c"II'

-l1v

·_·-k ~ ;;;:;'~j" ..., R', 1'-<" , ". I ..n.. i

1----'< 5. i :---o. I

j;~"I;h I C3

1" loV~ti'~'" ~/--INO

j

," ---- ( r ) TIP 12.2

'-ol LUI Rt::: o I K SqPflll'\

"''''I

~K7 -+--,----4 ;: In S'w / ':qRlt

,

,* .:r,3. : ... , ......

7,,1.'" ;:",1' .. :,.,; ,;. .... .,), .....

.".~~~ I (J"4 " I C7 c~ . .1! ~ '.:-,: I '_01 100J" p/u T' T""r

." c,o ell 1 -=- B"2.

r~ ~rL'/O( ,."-~-­-Il .... c,...l---.L----·s

I

5e.A ....... 7ftol lN~,/l.\Jtr-E-..,"T-".J LT •. .... -..- 01/ 1.

rl leli.

.... ·Pe .. r.' ... EL,:....,~ ..... 7 t:.J;'I"t.1t.. '~~-7'1

Fig, 4.2 - 6a Circuit diagram for Peltier element driver

CXl .....

Page 101: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

~ :

r

Fig. 4.2 - 6b

1 I, !

>, "II"?iL " I · -,--

.1

I:;", i ,.

!

>~" 110 I 0-1

Layout for Peltier element driver

[;,' ':: ~ .: : ... L .-~

:)fJ.O;;'T".... 1J..I'5:-",;J·'i\E.LJI~

··'·"'0" ';l.~ "," {rI

f'~(11F1( ft.,-,.-tt,vr !j';'I'I~h... ,-;"J - 7 4-P C [j. Y,uT - 8~·7<I·Ptl"l D-'

::::::i~( -.~.-- :::.

ex> ex>

Page 102: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

+v

(jfJ"3 Bu nOM 02 VIEW 01 T.>52

. ~J ~ 1:1 ~~'k!<r ~

1 .,

J.,f\.

.)'::... R2:" R3 oil IN - . 3KO' 8K3 S;Z -li~A / OFFSET

AOJ.O ~ ~,-f-2-- I

IC2~~ 1 CI it·,· J" OFFSET.

~4

RIO. 3" K

2

MCI45S BUFFER 'I ·./To "P~T 0 - + _(f1 I

RI2 . 2JK <,

G

RI4

RI5 20K

~---+-------08UFFE" ~7

4K7 SPM~ I ':':'SKG

AOJ.O '. VV'v~--+v~'>

Ie K -v

lOUTPU"

S?A.N

IN 1 '0--- _ [C~ I COMtJotl . . -----"

GROUNOO I . __ i '- ,I

SENSORO---~---L---4 ,~

EXCITATION

€. ') oilV

O)--r--'--- . INO~. .114.7/161. .n I' 7AN1: -=-

9~ONVERTER ..L0UTPUT

021 IN 4\A8

R& 2KO

INO

T-'- J~ ,..t4

o ~ r TAtliT .. : -=­-__ I-o'-.T

SEASTAR "INSTRUfAENTS "rfN 10" .-·OEC 22/64 -:nA B , ....

-v ~ CURR£N.I. .1:9~T~r,E AMP I

BUFFER (AO:5~0·~MPI·: I a.3:74.02pc

Fig. 4.2 - 7 Circuit diagram for AD 590 -electronic thermometer .

0>

'"

Page 103: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 90 -

The reference block contains the TE cooler (Peltier element, Me1cor USA)

which is connected over alternating layers of good and bad heat conductors (silver,

alu foils) for even heat distribution to the thermocouple junction B and the AD590

thermometer. The assembling of the thermocouples A and B and the reference block

prohibited usage of the fine wire diameters of 25 r""'. Larger wire diameters did

not become available so that the complete system could not be tested.

Preliminary tests with different thermocouple materials (Cu and silver plated

Cu) and very thick wire diameter (.3 mm) provided a calibration curve showing a

major temperature offset.

Instead measurements were conducted with the AD590 thermometer, which is

described in the following section.

4.2.5.2 AD590 Electronic Thermometer

The AD590 temperature transducer is an integrated circuit. When a supply

voltage between four and thirty volts is connected, it provides a current output which

is proportional to the absolute temperature at a sensitivity of I,. A/K. The

electronics, see Figure 4.2-7, is temperatue compensated for a range (0 ~ T ~ 30 0C.

The output is connected to a digital voltmeter, and the display (in volts) has to be

multiplied by a factor 20 to obtain temperature in centigrades. Resolution is about 1

mK and accuracy (which exceeded available laboratory equipment) is believed to be

of similar order.

The thermometer has been successfully applied to laser diodes and optical

power fluctuations can be related to temperature changes of the order of few mK.

This is discussed further" in Section 4.3.4.

Thermocouple and AD590 thermometer are shown in Figure 4.2-8.

i

I­i

t

::-.

Page 104: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 92 -

4.3 Measured Intrinsic Laser Diode Properties

Objective:

Tests of intrinsic laser diode properties are carried out to verify and

supplement manufacturers specifications and include the folio wig evaluations:

threshold current Ith; calibrated optical output power vs. forward current (LfI), noise

vs. current, shifts of threshhold current and noise pattern due to degradation, thermal

drift.

The following lasers were used in tests: HLP 7801 G (Hitachi), MM laser for

compact disc reading, ML Iil02, ML 3101 SM laser (Mitsubishi) with low noise. These

lasers are delivered in a hermetically sealed can. The LDS3-H SM (OrteI) Laser is

mounted on an open heat sink, which permits access to both laser facets. In addition

HL lliOO SM open heat sink lasers (Hitachi) were obtained, arrived however -after 10

months -too late for being incorporated into tests. Manufacturer test data sheets for

these lasers are in Appendix C.

1i.3.1 Experimental Set Up

In all tests described the laser diodes are connected to passive heat sinks

(min. size required Ii X Ii cm 2). The HL and M L laser diodes contain a photodiode

monitor at the back facet of the laser and allow for a compact set up. Here a metal

box (Hammond Box) serves as heat sink and package for resistors and necessary BNC­

connectors. The LDH laser diodes are mounted on a Cu sheet permitting access to

the front facet to position the external mirror and to the back facet to position a

photodiode for the output signal. The Cu-heat sink with laser is mounted on a Alu L -

profile which extends the heat sink and contains connectors and resistors for laser -

and photodiode. Metal box and Al profile bar are provided with mounting rods, which

-together with a set of fixtures - permit the positioning of the laser on the vibration­

free table.

The electrical circuit for ML 1i102 Laser is given in Figure, 1i.3-1. The laser

mount serves here as star - ground point for all instruments connected. Forward

current If is either measured across a 10 l'l. resistor or read from a calibraton curve

of the power supply, which relates dial settings to output current within 0.1 mAo -

-I

~

n n [] ~

[J , i

~:. , , ! ,

~] , ~> ,

::

" , , [] 0

}~-: , f , l' ~.

I

0 , - [

f

D ~-" , " " " n ;~"

~.

[]

I

~.: ~

"1 ' ' ... ~ ~.:

I' t.:·· ,,::

..

I !

uJ ':--.-: .... '

U

U [;1 :' ~:

C

Page 105: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 93 -

12V SCOPE

1111h-,:r--r.r~ CHART REC.

20 K

PO

II 12 V

LO

SCOPE

r-- .., I I I I I I lOt( If

L __ -1

CONST. CURRENT

SCOPE

Fig. 4.3-1 Circuit for measurements with HL 4102 laser

Page 106: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 94 -

Grounding of "+" or "_" connection of laser diodes and photodiodes is not

standardized in packaging and has to be considered for each laser diode type anew.

Noise signals are only few m V usually on a signal measuring volts and have to

be measured in DC mode for stability and drift measurements. A simple bias network

is inserted between photodiode and oscilloscope or chart recorder, which provides a

variable bias, see Figure 4.3-2.

The LDS3-H laser does not contain a photodiode and a RCA -C30920E is

removed from its can with a file and drill press and mounted to a x-y-z positioner

(DaedaD permitting a resolution of 5 ,.. m. The positioning of the diode, which looks

under an angle of 250 at the back facet of the laser diode, has to be optimized for

two conflicting objectives: j) the sensitive area of ,-1 mm2 should capture most of

the radiation field to provide a high signal. This requires a short distance to the

laser, ideally~ I mm. With the can removed from the photodiode the laser heat sink

permits a closest distance of 2 mm. ii) back reflection and scattering off the

photodiode affects the laser performance at levels < 10-8. Mounting under an angle

and a large distance are desirable here.

A Hamamatsu S 1337-1010 large area (98 mm2) photodiode (on request

manufactured without window) has been obtained for a working distance of ~ 10 mm,

arrived however too late to be tested.

Alignment of the photodiode is carried out as follows: A photodiode at a

distance of 15 cm from the laser front (under 250 angle) is used to monitor laser

output and indicates if the photodiode on the laser back produces significant output

changes. The back photodiode is postioned in x-y-z direction for optimum output.

A 60 MHz Iwatsu SS 5710 oscilloscope with two separate channels and

sensitivity range from I mV/div to 10 V/div is used for most measurements. Some

noise measurements are done with a Teletronix 468 digital storage scope. Chart

recorders used are one channel chart recorders, Omni Scribe, Houston Instruments

with a maximum sensitivity of I mV full scale.

Temperatures quoted are air temperatures in the lab, which usually differ

from the table top and laser heat sink temperature significantly.

il

, -] L· L,

no' U

n", I

i.

[J

r]

! 1

[I , .

i]' ,

: J

U

Page 107: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

HOTODIODE

- 95 -

o SCOPE OR CHART RECORDER

Jt------------------~O

Fig. 4.3-2 Variable bias source for noise and temperature drift measurements.

Page 108: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 96 -

4.3.2 Voltage Drop, Optical Power and Noise vs. Drive Current

Mitsubishi ML 4102 (No. 84-220549) SM

Voltage/Current Characteristics

The voltage/current characteristic of a laser diode, see Fig. 4.3-3a, shows the

typical features of a diode. Note that around threshhold no changes are visible.

Optical Power and Amplitude Noise

Optical power and noise show dramatic changes ar6ung threshold (here at

T = 17.50C, , = 29.2 rnA), see Figure 4.3-3b. Above threshold the power increases

linearly with drive current at a rate "top = 0.41 mW /mA for the ML 4102 (deducted

from manufacturers information). The absolute noise (which is taken as the

"eyeballed" peak to peak variations observed at a scope sweepspeed of 1-5 ms/div -

data obtained in this crude method agree well with more sophisticated methods) rises

sharply around threshold, reaches a characteristic peak at , = 1.06 'th before leveling

off to a constant absolute noise power. The arrow indicates mode jumping to the

next longitudinal mode due to increased active layer temperature: also single mode

lasers operate only in limited current regions truly in single mode. The jump is

generally not noticeable in the L/' characteristic.

As a power meter was not available calibration of the measured laser output

(in Volts) to absolute power (mW) is obained, by dividing the slope above threshold

A L(V)/ A 'p(mA) by the operating efficiency "l op(m W /mA).

Typical noise levels for the ML 4102 obtained in this manner are,.., 0.7

(shoulder) - 1 ,. W (peak) if mode hopping (3 - 7 f'< W) is disregarded.

The diode is rated at 3 mW for' = 39 rnA and emits at i\ .. 784 nm for

T = 250 C.

Hitachi HLP 7801 (No. 4C3243) MM (in can)

Voltage/Current Characteristics

" .. ]. ~ ,

[]

[.1. U

1]'.' , . i: <

u [j

The voltage/current characteristic shows similar features to the ML 4801 :]

characteristic, see Figure 4.3-4a.

q J

Page 109: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

FORWARD CURRENT

If (rnA)

20

10

- 97 -

a) 0 J...,.====r:=:::.......,..--.....,.--......

b)

1·40 .

OPTICAL POWER

(V) L 4·0

15mW

3{)

1·0 2·0

1·0 0'5

1·501·60 VOLTAGE (V)

1·70

()JW)

1·80

NOISE

(mV)

3

1·0 2

O'

1~~ __ ~~==~==;=:;==;:~:L~~~I.f~ 0+ 14 16 18 20 22 24 26 28 30 32 (mA)

Fig. 4.3-3 a) Voltage-current characteristic b) optical power L and amplitude noise of ML 4102

laser diode

Page 110: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 98 -

Optical Power and Amplitude Noise

Both optical output L and noise (Figure 4-.3-4-b) show the charactertistic

increase around threshold. The "kinks" in the L/I characteristic are rarely observed

and only typical for "instable" laser operation. Operating efficiency is derived from

data sheet for this particular laser as 1'Z op = 0.23 mW /mA and used for the absolute

calibration. The laser operates at 1\ = 793.6 nm (T = 250 C) in multi mode.

The noise curve peaks again around I = 1.06 Ith at noise levels of 1 r W. In

early measurements the shoulder dropped to 0.5 I" Wand degraded for unknown

reasons within 2 months to about 0.9 f" W. Mode hopping noise has been observed at

levels up to 7 - 10 !'! W. SIN ratios between 102 - 104- appear possible.

Shift of threshold current due to temperature is Observed at a rate of 0.6

mA/K.

The general impression of "instability" of this MM laser is confirmed under

feedback conditions.

Ortel LDS-3H (No. L2232) SM, open heat sink

Voltage/Current Characteristic

Has not been measured, (1.84- V at 3 mW power It. manufacturer).

Optical Power and Amplitude Noise

Both optical output power and noise agree in general features with the other

lasers.

The operating efficiency for this laser (No. L2232) is 41[ op = 0.387 mW /mA for

a threshlilold current Ith = 17.5 rnA. The lasing wavelength is 836.4- nm and maximum

rating 3 mW.

The noise shows the characteristic maximum around I = 1.06 Ith with

1.75 )A Wand drops only little to a shoulder value of 1.6 tt W. While the noise

shoulder was confirmed in a second measurement the noise around threshold changed,

see Figure 4-.3-5.

No mode jumping is observed and the laser gives the impression of being very

"stable" .

" .. U

'.1 J

n u U J

Page 111: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

If (rnA)

60

50

40

30

20

10

a) O~ ~ ~ 2-0 1-4 1-6 1-8

VOLTAGE (V)

OPTICAL POWER L

(V) 4(mW)

8

711-5

6

5 rl-O

4 I

3-1

0-5 2 .

I I r I ,

x

NOISE

(pw,f (mV)

1-5

60 b) ol~J;- ,,"=;/l th=49mA I

48 52 56 '" I 0 64 44 (rnA)

Fig_ 4.3-4 a) Voltage-current characteristic; b)'optical power and amplitude noise of HlP7801 G laser diode.

Page 112: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 100 -

OPTICAL NOISE POWER

()JW <mV) L

(V) . (mW) 2·0 2

12 12

, ....... I "-

10 , )t- 10 I

1·5 / 1·5 I .,)/-"1.

/ "/.

8 I 8 I I I

6 1·0 I 1·0 6 I I I

4 I J 4 ~

0·5 I 05 I

I 2 I 2

J

]</ ,c-)\

'th= 17·6 mA 0 0

12 14 16 18 20 22 24 (mA)

Fig. 4.3-5 Optical power and amplitude noise of LDS3-H laser diode.

J ~

N·· ~- -

E,.

tj.· "

]

Page 113: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

!"m ~H-I+-II!-H~ 'Ii . ,

1111111111111111IIIII _ t 1 • I

H=!

.... C) ....

Page 114: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-102 -

I ; -l ! ! :':!,Q

--1

_. -,~

. 0:1' . en

• •

-'

!] . c·

'J .. . •

Page 115: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 103 -

4.3.3 Optical Power vs. Time: Noise and Drift

For long term stability and noise mesurements the photodiode output is

biased as described under 4.3.1 and Figure 4.3-2. The biased output is displayed with

a chart recorder. A 40 min record of a ML 4102 laser diode is given in Figure 4.3-6.

If occasional "jumps" are neglected as well as long term drift a noise of :!: 0.4 m V is

measured. Under the operating conditions (I = 1.03 Ith) scope measurements indicate

between 1 -2 mV noise. The discrepancy can be explained by the slow time response

(~O.I ms) of the chart recorder, which acts as a low pass filter. In this case noise

level over several minutes are:!: 0.4 mV = 0.18rW and maximum fluctuations

observed over 40 min are:!: I mV = 0.45 t' W in better agreement with expectations.

"Jumps" can be related to sudden temperature changes, as will be shown in

4.3.4 and will be avoided with thermal control of the laser; The experimental set up

proves very temperature sensitive; a slight blow from 2 m distance provides major

output changes. Measurements are carried out without persens in the laboratory to

obtain reliable results.

A noise level of :!: 0.4 mV = .2 I"W over several minutes would indicate a SIN

ratio of about 5000: I if temperature is stablized.

Noise reduction schemes briefly discussed in 3.2 have the potential to reduce

noise over -20 to -30 dB or serveral orders of magnitude.

Under these circumstances as well as favourable aging rates (See 3.1) long

term stability of four to five orders of magnitude appear feasible.

As within time frame no temperature control became available the laser heat

sink was mounted to the largest heat sink available: the top plate of the vibration

free table. In addition heat sources (lights) and sinks (cooling through wall) were

carefully balanced. A test record over 14 h is given in Figure 4.3-7. The laser

temperature changed by AT = 2.0 K giving an average rate of 2.4 mK/min.

4.3.4 Optical Power and Temperature

The AD590 sensor is bonded with thermal conductive epoxy (EPOTEK) to the

heat sink block of a Hitachi HLP 7801 G diode where the cap is removed, (Figure

If.3-8). To reduce convective cooling by air turbulence a styrofoam/aluminum housing

is fitted around laser diode and temperature sensor, permitting a small window for

the laser radiation. The photodiode output is biased and fed to a chart recorder, as

described previously. A second chart recorder and bias circuit B is connected to the

Page 116: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-104-

Fig. 4.3 - 8 AD 590 thermometer head bonded to laser diode heat sink

r

I I

Page 117: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

• s.. QI

'" '"

'" QI ell = '" E :::I .... e I .... I<­o = o

en I

M . ..r . ell

.r-LL.

Page 118: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 106 -

AD590 output and a simultaneous plot of both outputs is presented in Figure 4.3-9, ~ which confirms that thermal fluctuations of the laser diode are responsible for

medium time power variations of the laser output.

Estimates for the heat transfer of slowly moving air at I cm/s indicate that

temperature changes of the diode may be caused by air convection. In a sensor the

laser diode should therefore operate in vacuum.

4.3.5 Summary of measured laser diode performance

While the LDS3-H laser gives the best overall impression during operation (no

mode hopping observed either at rising current or at various operating temperatures)

the wide beam angle is a slight disadvantage as well as the noise power which is about 9 a factor two higher than for the other lasers investigated.

Long term noise tests are of a quantitative nature. If temperature

stabilization and noise reduction techniques are employed a long term stability of

I: I 04 appears feasible.

Laser data are summarized in Table 4.3-1.

']

lJ ;) U

1 .. ] , ::..

Page 119: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

Table 4.3-1 Data of Laser Diode Performance

noise:

mode (\ Ith * Lmax -tt op peak shoulder

pattern (nm) mA mW mW/mA ~W fAW

HLP 7801 G MM 793.6 50 5 0.231 I

(No.4C3243)

ML-4102 SM 784 30 3 0.41

(No.84-220-549)

LDS SM 83.64 17.5 3 0.387 1.8 1.6

*Ith measured at 250 C

mode

hop.

t<W

beam

dl/dT angle

mA/K Deg.

0.5-0.9 7-10 0.6

0.7 3-7

none 40/30

I-' 0 ....,

Page 120: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 108 -

4.4 Measured Properties of Laser Diode - Bench Model Sensor

Objective:

It is the objective of the tests descirbed here to identify design parameters

and operating parameters as well as their limits for the laser diode pressure sensor.

The following tests have therefore been carried out: measurement of optical

power vs. drive current at fixed external mirror position of L(I)d, optical power vs.

displacement of fixed threshhold current LCd)I, optical power vs. displacement at low

reflectivity of the external mirror. Some limited tests have been done with different

reflectors.

The experimental arrangement for the tests is given in Figure 4.4-1. For

pressure simulation a triangle ramp from a (low frequency) function generator is

amplified with a DC-offset in a HV-operational amplifier (Burleigh PZ 70) to 500 -

1000 V. The DC offset ensures unipolar operation of the piezoelectric pushers. The

HV ramp drives the mirror mounted on the piezoelectric element periodically and

modulates the mirror position by up to 18 t' m corresponding to about 44 fringes for

?I = 836 nm.

The laser diode used in most tests and showing best results is LDS3-H. Some

tests have been carried out with ML 4102 and HLP 7801 G, which exhibit mode

hopping and permit only a narrow range of operation in drive current.

Photodiodes are the built in monitors (HLP 7801 G, ML 4102) or the external

diode as described in the last section. For some tests the signal is biased before it is

displayed by scope or chart recorder.

Typical ramp frequencies are 50 Hz for a display on the scope with 2ms/div.

For display on the chart recorder ramp frequencies are in the order of 1/20 Hz and

lower.

r] l L

! 1

, I

lJ : .•• 1 J

'J {

L

Page 121: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

exar function generator

HV - op amp Burleigh PZ70

translation stage with ~

mirror

pressure simulation

constant current source

power supply

photo diode

,L,

~ laser diode H photo diode .. [ bias

interferometer

Figure 4.4-1 Experimental set up for laser diode bench model sensor.

oscilloscope

chart recorder

data conditioning and display

...... o

'"

Page 122: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 110 -

1t.It.l Optical Power vs. Displacement L(dl,

Ortel LDS3-H

Most tests are carried out with this laser and the experimental set up of the

bench model sensor is given in Figure 1t.1t-2a with details in 1t.1t-2b. This picture

clearly shows the feasibility of a sensor occupying few mm2.

Fringe Resolution and Calibration Curves

For close distances between external mirror and laser facet the condition

C< 1 (see 3.2 "Laser Diodes Under Feedback") holds and relatively clean sinusoidal

modulation is obtained, as shown in the record Fig./t./t-3 (1.= 1.05 Ith; 2V /full scale; T

= 17.20C; 30 cm/min; AI-first surface mirror). Distance between fringe maxima is

~ /2 = 1t18 nm and the record presents a total displacement of about 2 I'm. A sensor

resolution of 1O-1t requires then a signal resolution of 10-3 V for multifringe

operation, which appears feasible with temperature stabilization and noise reduction

techniques.

A calibration curve constructed from only 1/2 fringe requires a signal

resolution of (better than) 1O-1t V which is for the unstabilized laser about 102 times

below present noise levels.

As discussed under 2.1.3 "General Properties of Interferometers", a practical

displacement interferometer sensor requires two phase shifted (900) monotone

declining fringe signals "r" and "i" to construct an unambiguous calibration curve and

therefore overcome the need for electronic memories. Figure 1t.1t-1t shows such a

fringe sequence (ramp voltage lower trace: 1000V, closest mirror distance ~I0l"m;

AI-mirror, I = 18.6 rnA ~ 1.06 Ith; scope: 0.2 V/div; t = 2 ms/div.(uncal.». About Itlt

fringes are obtained with a declining amplitude for increased distance to the laser

facet. The modulation depth of the signal declines from about 1.6 V by 1t2% to 0.68

V. The first 20 fringes (8.3 t<m) are strictly declining so that the fringe size can be

used for identification of the fringe number. If the fringe size Figure 1t.1t-1t is plotted

versus sensor displacement a point-by-point display of the calibration curve is

obtained.

'] , l

u

u [J

Page 123: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

Fig. 4.4 - 2a Experimental benchmodel sensor set -up; from left: blac k x-y-z positioner for RCA photodiode; under microscope with TV camera: alu mount for LDS3-H laser heat sink; right: translation stage with micrometer/ piezoelectric head (far right) and piezoelectric element with mirror directly under the microscope.

-111-

Fig. 4.4 - 2b Bench model sensor under mi croscope, t he complete i nterferometer From left: external mir ror; LDS3-H laser diode, go ld: heatsink; Cu- passive heat sink and photodiode removed from protective can. Width of heat sink is 2 mm. This set up demo nst rates that a sensor module ca n be made to fit 3 x 3 mm 2!

Page 124: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

(f)

~ ...J o >

2.0

1.0

0.0

, ... 1""/ "1' I \. 1 • I I ; iii ;. , ' .:1 I: i: I . , I J :; • i 1 : ; • : ~ ::. • •• ': .':'. •

- , ____ C •. _ I-----W---.:- --,. />- -C -~.- .. ;"\ ----.- or' - .--.. - - -,. r-' --~ -t-'-~-----\+--· .. -/"'-' -, .--. --+--i-- L __ , ,I,' , " , " " ," "I I l \ : ~i i . I' . : ",; . j' . ! ! \: i ' ; ~ : \ \ i :; : i _ ~ J; : : ; I : .. t . -'. . 1-' '; -. ; .. ,. ·1 .L I" ;-- , ....... - .-., .... ",/:" I.---~.-.• -I --II ... " .1- .. -

: : ' ' ; ~ I \ I . I . : ,I \: ; r, ; 1 : . ; I • , : : ; ! ;

___ ' __ I ___ o ___ .I\_J __ [ __ i ___ , ....;._....:~.L_~ f-:-----:--- -'\~-r·- I: _:..._~---LJjl:.-~-.-i-.-'-_ - !-bt-!--" , , ' " ,,~ \' 'I I,·'" I " "I 'I I' , ... I I I 1 I I I : : I' , : , . : I : I, 1 i,l 1 -I ! 1 I . I: I I' I I' I • r-:.-- :-.j- II T--'I-!--;--I'--t--l--~\-~/ -;--:--'1 -;\--1 'i,-T ; --r-LILI-1T-I---"- -',--1" \---r-1 -II.JJ ' .. I· I I I , ~, " ,\ '! ,\~ I" --; : I' 1 I f~ II Iii o! :--: -!T-; I ,--r- i ! j' -I :~ I ' 1 r! r- I- -'I

I I I I! I I I ' , I I .

. .,' --r---'--'-'o-- ---- -,-t 1l+ I--l ' " . -., . I ," I' "', . I I .. : ~ .: -, . -- -::: - . :.- I, 1 I' I , I 1 " I'· i \ I .. -/- . 1 I' .. - I' 1 ., I _ _ • ._ 1 ___ •• __ • • • I , I. 'I -

:.---[} 307-~ ~,-,--t---I-T-l- J~ -j -l-- i- : ---1- -1--:--~rT:----f--!t1--~ --. ~- -'-·l--·f-~T-, . I:::: -:: - ,'.. r- \ , \ I - 1 i I 1-1: 1'1 . <> .. - I . . I .. :.- !.:~.. .... "I I, _ 1- 'I' 1\ I' -.. : -:.. I \ f-I-"-r-I-~I--I---r-----r---t--~ r-------L-I- rTo-1--~- --f--i-- _C- -1- -'-:-ir-1 . , --- .... -- - - . I I' I . I ' .. . - - - -.j'-:- :.:j I . ., I. .. I 1 ' .. : .-- .. ' .' -'.' - 0H ~ ••• : ::.:_ ~~~ :~ ............ ' • '. I.. :~ '... ............. : . I ; .. '. . _ ...... __ ~" .. _." ._.~ ...... ~~ .. . . --L,o .. '''- .. -~. . "I~ .11-- .. - ....... 'I-t I" .1

1_" .- ... - .... . .. "'-" .... " ...

~::V ::!i :':: ~:J--:~:-;-:c ~-~- :-~~:I':-~-- :1~:~8':,':; ~~.-,.' ·-:F~ .. ---:, '.' ... ~: ::: -~: .::~: ~:: .~~~ 'i~ .~:: :~_l .. T .... ,! , .... J ,,- . ..-. 1- \ '1 . 'I .... '. ···-r .\ ·1---·· -... ,_ .. ,c", "";" ,,' !I~' :~:::: '," "'<: >' :~l';;:TTr:'-: .. ::.:~-t-_l.·· .1. ,I i .. · ••.. \ .... ::, {;:: :.:;; .; :::; ~:- : .

.,'_, ....................... 1 ..... J ...... , .1 ·1···· ... , . . 'T~T:T: .'~ -:-:·l·I-.-~ ····f:::· :-:1:::- -:.-,.- .... '~.: ----i -'-!--"~-'r"--' .,·1---;---1-:- .......... : ... ~~ .. :-:-. :,. '" 3," -:-:-:r:-:-:r'--1 '1 1,,· .. - .... ,.' .... \ 1" "'I . . ·1· . I ' ' I I~' 11-" .... , -.. ... .. ·1 .. · .......... · ...... ·1 . . ...• i.' ...................... .. . .... .. 1 I··· . ' i' I 1···· .. . .. .,.,~... -'" !"" .• ~. -, ... " ..... . .. _ .:.. ___ . . .... '" ...... . .... -.:.. .' ~. :":,,,:,:,_ .. ~o-: . __ ~:: .. -1 ___ .:.~:: .1----1 ... "._._ L. __ 1_ ........•. , .... _. - 0. " ....... 1-: - .. :J .• -, •• ~ _:...~ .:....._j

Figure 4.4-3 Bench sensor output as a function of the displacement of the external mirror. Closest distance from laser facet was about 10 11m •. (T ~ 17.2 C, If = 17.5 rnA) !

!--' !--'

'"

Page 125: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 113 -

The parameters controlling fringe size and therefore the calibration curve of

the sensor are further discussed in the rest of the report.

Fringe size and sequence are very reproducable for the first 15-20 fringes,

where details depend on angular mirror alignment.

Maximum Sensitivity Within Fringe

Largest sensitivity is obtained keeping the mirror in quadrature condition in the first

fringe. A noise signal of less than 0.3 m V on the ramp signal modulates the mirror

position by about 2 X 10-12 m, see Figure 11.11-5. Under these conditions even talking

at a distance of I m causes modulation: in a quiet laboratory index of refraction is

constant and only distance modulations change the optical path changes A (n d)

observed by the interferometer. It is d = .10-6 m, dd = 10-12m; LI dId = 10-6. If d = constant the bench model sensor measures /ln/n = 10-6 For air n = 1.002 and An =

10-6. In a first approximation p "".9 ...... (n-1) and tJ.p/pN/)'+-I~ Combined with

the result from above we obtain Ap/p = 10-3 which is possible for the upper end of the

acoustic pressure scale. Modulation of the sensor by variation of the refractive index

appears' feasible. In the laser diode pressure sensor the interferometer should operate

under vacuum.

Tracking Ranges

The tracking range is defined here as the displacement range over which the

interferometer output is sinusoidal and permits the construction of a calibration

curve. Several tests have been run extending the mirror displacement to several mm

and entering the C >1 region of operation showing instability. Maximum and minimum

of the sinusoidal modulation are measured and the envelope plotted, see Figure 11.11-6

(I = 1.1 Ith' T = 21.60C, closest distance d = 10 II m). This plot reveals that the

average laser power is drastically affected by the mirror position several mm away.

Largest modulation occurs in a narrow range close to the laser diode. This is

emphasized, if only the modulation depth (max - min) is plotted, Figure 11.11-7 (I = 1.06

ith, T = 200C). The modulation signal drops from about 3 V to 100 mV within

150/'C m. Tracking is possible to about 1150 t< m, where signal fluctuations and non­

sinusoidal output forms indicate onset of the C > 1 regions, which are interrupted by

Page 126: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

Fig. 4.4 - 4 Strictly declining fringes are obtained with increasing distance from the laser facet . Closest distance: 10 1!JT1; largest distance: 28 1!JT1 .

... I

90 ~ -,

• - .-

I' ·It

, I I

f - -

10 I

i -

t ~"H

-

. ''''''' .. ~ LI ., ..",.,

111'_11 ... - --

,'1, ','-' . '-"''1 il .~ .. ,

""'" ',.

I,,~, "'lfP.l .'

Fig. 4.4 - 5 Noise of 0.3 mV on the HV ramp (upper trace; 1 mV / div) modul ates the laser output (lower t race; 10 mV/div). Mirror position is within the first fringe from laser facet; in quadl~ture. The noise limit corresponds to a disp lacement of only 2 x 10- m!

I I I I

I

I I

Page 127: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

5'0

4{)

-..

~ ..J

~ .......

g ~3·0

..J

2·0

-LMOO MAX

t + t

- LMOO MIN

1'0 2.0 3·0 4·0 mm

Fig. 4.4-6 Envelopes for max (lmod, max) and min (Lmod , max) of fringe signal. Arrows indicate maximum and minimum in fringe size.

+

d

I-' I-' c.n

Page 128: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 117 -

regions with sinusoidal modulation. The latter are spaced here at about 1.37 mm and

correspond to the optical path length 1 n of the laser cavity (I = 0.3 mm, n = 4.4).

Both the good tracking region and the onset of "erratic behaviour" - likely

due to mode swapping -- are investigated in tests, where the drive current is varied.

Results are given in Figure 4.4-8 and 4.4-9. Onset of "erratic behaviour" is in all

cases beyond a distance of 350/-1 m. The "erratic pattern" is repeatable and shows

similar features increasing with drive current.

Optimum drive current is found around I = 1.06 Ith (I9 rnA) for the largest

percentage of modulation (60-70%). This condition seems to coincide with largest

noise for the isolated laser.

A documentation of output forms for d = lOr m to d = 1.25 mm can be found

in the Appendix A for the LDS3-H operated at 1.06 Ith (I9 rnA). A maximum

modulation of 80% was observed for d = 10 t" m.

The change from the sinusoidal to non-sinusoidal output is gradually

increasing with distance here and obvious long before noticeable in the modulation

depth, Figure 4.4-8 and 4.4-9.

Other Lasers

Limited experiments have been performed with ML 4102 and HLP 7801G •

The latter shows a strong tendency to mode hopping, while it is possible to find a

range of drive current, over which results from ML 4102 are comparable with the

results of the LDS3-H laser.

4.4.2 Optical Power vs. Drive Current L(I)d

The optical power/drive current characteristics has been rnesured for the

LDS3-H laser at d = 8 rm, 50 rm and 250 ,.m and is given for maxima (constructive

interference) in Figure 4.4-l0a and minima (destructive interference) in Figure 4.4-

lOb. Both maxima and minima curves indicate an increase in threshold current. This

is in contradiction to findings by others(2), (8) and is predicted by theory for d > > n 1,

where the external cavity is large compared with the laser cavity. Further discussion

exceeds the purpose of this report.

The forward currents for which the largest modulated output is obtained is

marked by an arrow.

Operating efficiency of maxima and minima curves are identical to those of

Page 129: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

L (mV)

60

50

40

30

20

10

- 119 -

Illth = 1.1 lllth = 1.07

l/~th = 1.04 l/Ith = 1.01

T = 18.50 C

T = 20.20 C T = 20.20 C T = 20.00 C

1·10 I'h

1·07 I'h

O+-------~----~------~------~------_r------_r--~ o 0·2 0·4 0·6

d (mm)

0·8 1·0 1·2

Fig. 4.4-9 Fringe modulation vs. displacement for four drive currents outside useful tracking range. LDS3-H laser. AL-mirror; ~ non-sinusoidal modulation.

Page 130: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

~Ith (rnA)

0·8

0·6

0·4

0·2

~L + (mW)

0·3

0·2

0·1

+-o I •

o 10 20 30 40 50 60 70 80 d (pm)

Fig. 4.4-11 Largest possible output signal ~L for bench model sensor as constructed from threshold shifts lHth "+" (Fig. 4.4-10a,b) and signals "X" (Fig. 4.4-8).

.... N ....

Page 131: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-123-

Fig. 4.4 - 12 Details of fringe top at I ; 19.2 mAo 5 mV /di v, t ; 2 us/div, bias: 2.993 V. Amplitude variations correspond to about ± 4 mV "no ise ".

Page 132: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 124 -

Noise

Noise measurements for the sensor configuration require the control of the

mirror position as well as a thermally stabilized laser source; both were unavailable.

Instead it is possible to bias the output and display parts of fringes on the

oscilloscope. (This method drives the amplifier into saturation and it is hoped that

they regain stable operating conditions sufficiently fast.) Figure 11.11-12 shows the

position of a fringe top resolved at t = 2 /"s/div and 5 mV/div. (It = 19.8 mA, bias

2.993 V). Over the exposure time about 20 fringes are observed. Amplitude

variations are of the order of + II mV and agree very well with noise levels of the

isolated laser diode for the drive current.

The single fringe traces exhibit variations < I mV and demonstrate how much

lower noise levels are for short time operation.

11.11.3 Influence of Mirror Reflectivity and Reflector QUafltity

First surface aluminum mirrors have a (power) reflectivity of about 86% for

(I = 830 nm (and 111% absorption), while a glass surface will reflect approximately

11%. Tests with 0.2 mm thick glass reflector give about 10% of the modulation depth

obtained from the Al mirror, both at I = 19 mAo Largest signals with the glass mirror

are about 170 mV for d = 10 r m.

The region of "non sinusoidal" signals (for Al at d = 550 /'< m and modulated

signals of 5 mY) appears at the same modulation depth and therefore closer to the

laser, reducing the tracking range of the sensor.

Apart from sensor output form the signal to noise ratio will determine the

tracking range and the parameters controlling the slope of the calibration curve have

to be identified. The comparison of tests carried out with different reflectors

demonstrate that the calibration curve slope is controlled by the laser cavity

properties for short sensor displacement.

A test is carried out with a GRIN collimating lens and a plane Al reflector

with encouraging results: on first trial a 25% modulation is obtained.

In addition a concave Al reflector (of minor surface quality) has been tried.

These reflector geometries require a larger distance to the laser, which increases

stability problems and have therefore not been investigated further.

Page 133: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 125 -

4.5 Demonstration Sensor

A single mode ML 3401 laser, removed from its housing, is bonded ("Crazy

Glue") into the package of a Paroscientific pressure sensor to demonstrate basic

assembling techniques, see Figure 4.5-1. A 1 mm2 piece of first surface Al mirror is

bonded to a small Cu-block, which in return is bonded to the original lever system.

Pressure supplied to the hose expands the elastic bellow, which provides here the

pressure reference and moves the mirror towards the laser so that "low pressure"

corresponds to the largest displacement.

Initial concerns that the bonding might lead to overheating and destruction of

the laser proved unnecessary. The laser, which has similar characteristics to the ML

4102, can be operated in a limited current range without Inducing mode hopping by

the external reflector. Modulated signals are of the order of 25% of the output.

Problems encountered are the cutting of the small mirror as well as the

deveopment of a mounting scheme, which provides a parallel alignment to the laser

facet.

Tweezers on mounting brackets fixed to x=y-z positioners allow for fine

positioning of the components before bonding.

Page 134: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 127 -

4.6 Summary of Tests

The output of the sensor, operated well above laser threshold and starting at

small displacements consists for increasing displacements of sinusoidal "fringes" -­

similar to a two beam interferometer. The fringes decrease in amplitude and become

for an interim "non-sinusoidal" before they increase and symmetry is restored. The

pattern of increasing and decreasing fringes continues at intervals controlled by the

laser round trip time and is similar to a Fabry-Perot output of low finess and losses.

Losses in the external cavity are determined by mirror reflectivity (glass/AI)

and shape (plane/concave/focussing) and determine slope 1 in Figure 4.6-1 as well as

the maximum output obtainable in the sensor, point 1.

The modulated output envelope is identical with the calibration curve,

however only parts for small displacement are smooth enough for sensor applications

between point (2) and (5). The "erratic behaviour" (3), fringe distortion (5) and signal

to noise ratio (4) set practical limits to a range within the part labeled "slope 2".

This slope is controlled by properties and losses of the laser diode (gain, wavelength,

quantum efficiency). The maximum of the modulation (point (1) for d = 0 m) is

reached at the lower straight part of the L/I characteristic for fringe minima, Figure

4.4-10b. Any further increase in forward current increases only the signal bias and

the absolute output of the laser. This however seems to destabilize the sensor (wave

form distortion) and move point (5) closer to the laser so that an optimum operational

point exists.

The tracking range of the sensor is about 100 r m, where the largest

obtainable modulated output is between 0.4 - 0.04 m W •

Noise power could not be clearly determined. A pessimistic approach

suggests to take the maximum "eyeballed" noise power observed from the scope (t = 2

ms/div) at 1-21" W. It has been demonstrated however that air turbulence effects the

open heat sink configuration seriously and contributes to noise and drift. Shielding

from turbulence as well as thermal stabilization is necessary.

The noise appears greatly reduced at high time resolution and reveals the

stronghold of the sensor to operate at high time resolution (pulse pressure, vibrations,

hydrophone, accelerometer, current transformer, etc.).

In quadrature operation a displacement as small as 2 X 10-12 m has been

resolved.

Page 135: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 128 -

~L

~Lmax - -- - -

~Lmin ~------- -I I I 4 I I , I , , ,. ,

TRACKING RANGE

Fi g. 4.6-1 Parameters governing sensor cali bration curve t. L; for explanation see text 4.6.

d

1] L

W :', ,,~

g fu:,

[] . ~:

B 0 0

- B

n "

[] i.

J g ;

~ :-~

B ,.

fJ ~ .

!J i ,

U

U ".

'] L

Page 136: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

-126-

press ure

1

Fig. 4. 5 - 1 Laser diode interferometric module in demonstrat i on pressure sensor .

[

r

I I I I

Page 137: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 129 -

1j..7 References

1. W. Bludau, R. Rossberg, Appl. Opt. 21, 11 (1982) 1933.

2. A. Dandridge, R.O. Miles, T .G. Giallorenzi,

Electr. Lett. 16, 25 (J 980) 91J.8.

3. F. Schumann, K.H. Tietgen, Elektronik II (J 98IJ.) 59-62.

IJ.. A. Abou-Zeid "Spektrale Untesuchungen an Komerziellen Ga Al As Laser

Dioden", Physikalisch Technische Bundesanstalt, PTB-Bericht PTB-Me 56,

1981J., ISSN 031J.1-6720 Braunschweig-West Germany,- in German.

5. S. T. Ho "Reduction of Frequency Noise in Semiconductor Lasers",

MSc Thesis, Dept. Electrical Engineering and Computer Sciences,

Massachusetts Institute of Technology, 1981J..

6. R. Kist, S. Drope, H. Woelfelschneider, "Fiber-F~bry-Perot (FFP)

Thermometer for Medical Applications" in Proceedings of the 2nd

International Conference on Optical Fiber Sensors, Sept. 5-7, 1981J.,

Liederhalle Stuttgart, West Germany, VDE-Verlag GmbH, Berlin 1981J.. West

Germany, 165.

7. Sea - Met Sciences Ltd., Dr. T. M. Dauphinee,

36 Ave., Ottawa, Onto KIS ON9, Canada.

8. R. Lang, K. Kobayashi, IEEE QE 16, 3 (1980) 31J.7.

9. T. Kanada, K. Nawata, IEEE QE 15,7 (1979) 559.

10. G. Hernandez, Appl. Opt. 17, 19 (]978), 3088.

11. S.M . Lindsay, I. W. Shepherd, Rev. Sci. Instr. 1J.8, 9 (] 977), 1228.

Page 138: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

R g

• 11., ~J

J ~

D H

-- n g []

",1 ~j

'.] .' , . c

, 1

d

Page 139: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 130 -

5. ALTERNATIVE APPROACHES

5.1 Alternative Operational Concepts and Devices

Two independent signals are required for the unanimous reconstruction of the

light wave phase and displacement d, as is discussed in chapter 2.1.3 "General

Properties of Interferometers". The cos and sin function fulfill these requirements

and the latter is obtained in an interferometer output by introducing an additional

phase shift tl'f = A Iii- (retarder) in signal -- or reference beam. This is usually

implemented by operating two crosspolarized and ~ phase shifted interferometers

on one beam and providing the same phase modulation in them. This approach fails

for the laser diode sensor because the waveguide structure-of the active layer acts as

a polarizer/analyzer with a high extinction ratio and permits operation in only one

polarization mode, in the plane of the layer.

External beam manipulations - as for example the interference of a part of

the laser output with another part which is retarded by }\ I Ii- -- will contribute an

additional time independent phase to the electric wave vector. Both the extreme

phase variations at light frequencies as well as a constant time independent phase

provide in the detector output only a DC offset. External beam manipulation can

therefore not provide the required second output form.

Differentiation of the output signal can be obtained by changing the optical

path A (n.d) by a known amount and measuring the change in output power A. L. For

vacuum operation n = 1 and Ad = f\ Iii- a displacement modulation of about 250 nm is

required, which can be obtained from a good single disk piezoceramic (L1 dIll u ~ 500

nml 1000 V).

Two Wavelength operation of the laser can provide two independent signal

forms within a limited range of operation and appears very attractive. Assuming a

phase difference A If = A I Ii- to be introduced by the wavelength shift ~ 1 - (\2 = £l..\ for the mirror displacement d we obtain

--

or

2.0-1 A

(5.1-1)

(5.1-2)

Page 140: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 131 -

For d = 25 i\ we obtain !J)../ A = 1/200 or LL\ = 4 nm. Such a wavelength shift is

within the capabilities of present technologies (T - shift of laser environment;

pulsed/cw operation; wavelength shift by current modulation in the C = I region,

injection locking) and is a promising operational concept, permitting absolute

displacement and index of refraction measurements.

Utilization of the low correlation between laser diode forward and backward

output was considered for the generation of two independent interferometer output

forms.

Tracking of the mirror position by keeping the interferometer in quadrature

with a piezoelement was considered. Piezoelements are unsuitable for frequencies

smaller than I Hz and an additional dither would have to be introduced.

An "optical displacement" sensor changing i1 n rather than d was considered.

IJ n = 10-6 can be resolved for unaggressive gases containing no vapours.

A polarimeter arrangement was considered. It requires a larger external

cavity. Sensitivities are generally higher than for interferometers. Temperature

stability has been reported as problem.

A laser diode was exerted to direct pressure. An output modulation of about

25% can be expected. Laser manufacturers warn for dislocation migration in the

laser structure.

A combined electronic/optical oscillator was discussed which changes its

peak frequency due to external excitation. The operation of such a sensor uses the

principle of the paroscientific pressure sensor and requires a high-Q resonator, which

is here formed by a combination of electronic (transistor, diode) and optical

components (laser diode, optical fibre).

In all approaches the module size will be kept small to minimize disturbance

by thermal effects and mechanical noise. Materials of suitable mechanical and/or

thermal properties are quartz and glassy materials like Zerodur. Thermal properties

and mechanical stabilities are compared in ref. (j) - (3).

CO! );-

U

lJ. ,

Page 141: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 132 -

5.2 References

I. S.F. Jacobs, S.C. Johnston, D.E. Schwab. Appl. Optics 23, 10 (1984) 3500.

2. J.J. Schaffer, H.E. Bennett. Appl. Optics 23, 17 (1984) 2852.

3. S.F. Jacobs, S.C. Johnston, G.A. Hansen. Appl. Optics 23,17 (1984) 3014.

Page 142: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

n o I

-- n [J

[]

Page 143: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 133 -

6. CONCLUSION

The present report highlights components and their functions of an optical,

highly integrated sensor system for displacement and pressure measurements. The

usage of components in multiple functions leads to a sensor system which can in its

size only be compared to VLSI circuits and therefore makes a very attractive sensor

system. The high degree of integration decreases on the other side the freedom in

free design parameters and - if laser design to required specifications is not

available - the selection of the proper laser characteristics becomes the most

important single design step. This step requires therefore a much more thorough

understanding of available technologies, components and their function within the

sensor than what is required for a design of discrete" components. Practical

experience from a bench model sensor are supplemented where necessary by data and

theories from the literature. The summaries provided here give a state of art review

for Ga Al As laser diodes as well as for the technology of laser diode sensors.

Experiments with the bench model sensor show its large potential to be

operated at high frequencies. With laser rise times of subnanoseconds the device can

be used for high resolution (time and spatial) measurements of displacement,

acceleration, refractive index changes, vibration or as hydrophone (sensitive area

0.1 mm2). In such application thermal stabilization of the laser becomes less

important. Combining the sensor with lock-in amplifier technique displacement

smaller than 10-14 are expected to be measured for signal frequencies of lOa KHz.

This corresponds to a resolution of 10-9 for displacements or refractive index.

The sensor module operation for static signals requires for Ga Al As lasers a

high degree of thermal stabilization and likely noise reduction schemes (current

modulation or HF modulation of light reflected back into the laser cavity). The

operation over a displacement range larger than one fringe is possible - requires

however additional electronics for either differentiating the signal by modulation of

the mirror position or two wavelength operation.

Operation for displacements smaller than one half fringe appears possible,

requires however stringent temperature control and noise reduction of the laser. The

sensor performance could not be tested for these conditions.

The construction of a demonstration sensor demonstrates that bonding can be

used as technique to mount the laser without inhibiting the cooling excessivily.

Production techniques have to be further developed for the precise mounting of the

external mirror opposite to the laser facet.

Page 144: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode

- 134 -

The work reported here focuses on the well established technology of Ga Al

As laser diodes, which is presently still more readily available than lasers based on

quarterny alloys. Developments supported by the requirements of telecommunica­

tions industry have led to dramatic improvements in thermal stability of these lasers

operating at 1.3 or 1.6 JA m and should be considered for the further development of

the laser diode pressure sensor module.

If the laser diode sensor is compared to piezoelectric or piezoresistive

modules they show all best operation at frequencies well above 1 Hz. The laser

module as a receiver is however superior due to its extreme potential for compact­

ness as well as its capability for high spatial (;!O .1 mm2) and temporal (~ 1 ns)

resolution.

f1 ~J

Page 145: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 146: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 147: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 148: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 149: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 150: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 151: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 152: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 153: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 154: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 155: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 156: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 157: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 158: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 159: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 160: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 161: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 162: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 163: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 164: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 165: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 166: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 167: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 168: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 169: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 170: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 171: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 172: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 173: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 174: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode
Page 175: A LASER DIODE -P-RESSURE SENSORdfo-mpo.gc.ca/library/151718.pdf · Amplitude Noise of HLP 7801 G Laser Diode ! . Fig. 4.3-5 Optical Power and Amplitude Noise of LDS3-H Laser Diode