a a2 b a b sample iii SiNx surface with CdS wires ALD coated with SiO2 with APTES sample iv SiNx surface with CdS wires ALD coated with SiO2 NO APTES WITH PURIFIED DNA ORIGAMI FROM NORTON GROUP, CROSS DESIGN the remainder of the chips not labeled a or b or a2 are untreated, these areas were never exposed to anything in our lab WITH RECTANGULAR ORIGAMI CONSTRUCT (1.6nM NOT PURIFIED) FROM SEEMAN LAB WITH 20NM GOLD NANOPARTICLES ATTACHED VIA DNA OLIGO TETHERS WITH PURIFIED DNA ORIGAMI FROM NORTON GROUP, CROSS DESIGN - no surface decoration seen a iii SiNx chip surface with CdS nanowires with 3nm of ALD SiO2 and APTES WITH PURIFIED DNA ORIGAMI FROM NORTON GROUP, CROSS DESIGN cantilever is 115um long this wire is from the same chip (iii), but from an untreated area, no surface decoration seen checked construct on mica iii SiNx chip surface with CdS nanowires with 3nm of ALD SiO2 and APTES b WITH RECTANGULAR ORIGAMI CONSTRUCT (1.6nM NOT PURIFIED) FROM SEEMAN LAB WITH 20NM GOLD NANOPARTICLES ATTACHED VIA DNA OLIGO TETHERS cantilever is 115um long checked construct on mica full-z scale overview of wire above a2 iv SiNx chip surface with CdS nanowires with 3nm of ALD SiO2 NO APTES WITH PURIFIED DNA ORIGAMI FROM NORTON GROUP, CROSS DESIGN - NO surface decoration seen, apparently APTES is important for origami to CdS binding this wire is from the same chip (iv), but from an untreated area